JP2003141890A5 - - Google Patents

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Publication number
JP2003141890A5
JP2003141890A5 JP2002197395A JP2002197395A JP2003141890A5 JP 2003141890 A5 JP2003141890 A5 JP 2003141890A5 JP 2002197395 A JP2002197395 A JP 2002197395A JP 2002197395 A JP2002197395 A JP 2002197395A JP 2003141890 A5 JP2003141890 A5 JP 2003141890A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002197395A
Other versions
JP2003141890A (ja
JP4262941B2 (ja
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Application filed filed Critical
Publication of JP2003141890A publication Critical patent/JP2003141890A/ja
Publication of JP2003141890A5 publication Critical patent/JP2003141890A5/ja
Application granted granted Critical
Publication of JP4262941B2 publication Critical patent/JP4262941B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002197395A 2001-07-06 2002-07-05 アドレシング方法及び装置、記憶サイト読み出し方法及び装置、プログラミング方法及び装置、並びに、セル単位での消去方法及び装置 Expired - Fee Related JP4262941B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30373601P 2001-07-06 2001-07-06
US60/303736 2001-07-06

Publications (3)

Publication Number Publication Date
JP2003141890A JP2003141890A (ja) 2003-05-16
JP2003141890A5 true JP2003141890A5 (ja) 2005-10-27
JP4262941B2 JP4262941B2 (ja) 2009-05-13

Family

ID=23173459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002197395A Expired - Fee Related JP4262941B2 (ja) 2001-07-06 2002-07-05 アドレシング方法及び装置、記憶サイト読み出し方法及び装置、プログラミング方法及び装置、並びに、セル単位での消去方法及び装置

Country Status (5)

Country Link
US (1) US6631088B2 (ja)
EP (1) EP1274095A3 (ja)
JP (1) JP4262941B2 (ja)
KR (1) KR100929787B1 (ja)
TW (1) TW565846B (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3633537B2 (ja) * 2001-09-27 2005-03-30 トヨタ自動車株式会社 車両用内装部品の取付構造
US6816412B2 (en) * 2002-05-21 2004-11-09 Broadcom Corporation Non-volatile memory cell techniques
US6760270B2 (en) * 2002-09-30 2004-07-06 Motorola, Inc. Erase of a non-volatile memory
JP3985689B2 (ja) * 2003-02-21 2007-10-03 セイコーエプソン株式会社 不揮発性半導体記憶装置
US7589990B2 (en) * 2004-12-03 2009-09-15 Taiwan Imagingtek Corporation Semiconductor ROM device and manufacturing method thereof
US7352033B2 (en) * 2005-08-30 2008-04-01 Halo Lsi Inc. Twin MONOS array for high speed application
US7936604B2 (en) * 2005-08-30 2011-05-03 Halo Lsi Inc. High speed operation method for twin MONOS metal bit array
US7388252B2 (en) * 2005-09-23 2008-06-17 Macronix International Co., Ltd. Two-bits per cell not-and-gate (NAND) nitride trap memory
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7567457B2 (en) * 2007-10-30 2009-07-28 Spansion Llc Nonvolatile memory array architecture
US8125829B2 (en) * 2008-05-02 2012-02-28 Micron Technology, Inc. Biasing system and method
US7796436B2 (en) * 2008-07-03 2010-09-14 Macronix International Co., Ltd. Reading method for MLC memory and reading circuit using the same
TWI391947B (zh) * 2008-08-06 2013-04-01 Macronix Int Co Ltd 多位階單元記憶體之讀取方法及應用其之讀取電路
MX363787B (es) 2013-03-13 2019-04-03 Medimmune Ltd Pirrolobenzodiazepinas y conjugados de los mismos.
US9361995B1 (en) * 2015-01-21 2016-06-07 Silicon Storage Technology, Inc. Flash memory system using complementary voltage supplies
FR3036221B1 (fr) * 2015-05-11 2017-04-28 Stmicroelectronics Rousset Structure d'interconnexion de cellules memoire jumelles

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US5986934A (en) * 1997-11-24 1999-11-16 Winbond Electronics Corp.I Semiconductor memory array with buried drain lines and methods therefor
US6134156A (en) 1999-02-04 2000-10-17 Saifun Semiconductors Ltd. Method for initiating a retrieval procedure in virtual ground arrays
US6469935B2 (en) * 1999-08-05 2002-10-22 Halo Lsi Design & Device Technology, Inc. Array architecture nonvolatile memory and its operation methods
US6248633B1 (en) 1999-10-25 2001-06-19 Halo Lsi Design & Device Technology, Inc. Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びicカード
EP1246196B1 (en) 2001-03-15 2010-02-17 Halo, Inc. Twin MONOS memory cell usage for wide program bandwidth

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