JP2003129283A - メッキ処理装置及びそれを用いた半導体装置の製造方法 - Google Patents
メッキ処理装置及びそれを用いた半導体装置の製造方法Info
- Publication number
- JP2003129283A JP2003129283A JP2001320090A JP2001320090A JP2003129283A JP 2003129283 A JP2003129283 A JP 2003129283A JP 2001320090 A JP2001320090 A JP 2001320090A JP 2001320090 A JP2001320090 A JP 2001320090A JP 2003129283 A JP2003129283 A JP 2003129283A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plating solution
- tank
- liquid
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001320090A JP2003129283A (ja) | 2001-10-18 | 2001-10-18 | メッキ処理装置及びそれを用いた半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001320090A JP2003129283A (ja) | 2001-10-18 | 2001-10-18 | メッキ処理装置及びそれを用いた半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003129283A true JP2003129283A (ja) | 2003-05-08 |
| JP2003129283A5 JP2003129283A5 (enExample) | 2005-06-09 |
Family
ID=19137529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001320090A Pending JP2003129283A (ja) | 2001-10-18 | 2001-10-18 | メッキ処理装置及びそれを用いた半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003129283A (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005064016A (ja) * | 2003-08-11 | 2005-03-10 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2007070730A (ja) * | 2005-09-07 | 2007-03-22 | Rohm & Haas Electronic Materials Llc | 金属デュプレックス及び方法 |
| KR100744417B1 (ko) | 2006-08-11 | 2007-07-30 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조 장치 |
| CN103866365A (zh) * | 2012-12-11 | 2014-06-18 | 诺发系统公司 | 电镀填充真空电镀槽 |
| CN104005077A (zh) * | 2014-05-14 | 2014-08-27 | 上海交通大学 | 优化温度场分布的电镀装置及其电镀方法 |
| US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
| US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
| US9721800B2 (en) | 2009-06-17 | 2017-08-01 | Novellus Systems, Inc. | Apparatus for wetting pretreatment for enhanced damascene metal filling |
| JP2021123732A (ja) * | 2020-02-03 | 2021-08-30 | 株式会社東設 | 鍍金方法及びその装置 |
| JP2023082465A (ja) * | 2021-12-02 | 2023-06-14 | トヨタ自動車株式会社 | 金属皮膜の成膜装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01128547A (ja) * | 1987-11-13 | 1989-05-22 | Fujitsu Ltd | メッキ装置 |
| JPH0717334U (ja) * | 1993-08-27 | 1995-03-28 | 三菱マテリアル株式会社 | 発泡性液体の気泡除去装置 |
| JPH10312990A (ja) * | 1997-05-14 | 1998-11-24 | Tadahiro Omi | 化学反応方法および化学反応装置 |
| WO2001068952A1 (en) * | 2000-03-17 | 2001-09-20 | Ebara Corporation | Method and apparatus for electroplating |
| JP2002363792A (ja) * | 2001-06-01 | 2002-12-18 | Tokyo Electron Ltd | 液処理システム及び液処理方法 |
-
2001
- 2001-10-18 JP JP2001320090A patent/JP2003129283A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01128547A (ja) * | 1987-11-13 | 1989-05-22 | Fujitsu Ltd | メッキ装置 |
| JPH0717334U (ja) * | 1993-08-27 | 1995-03-28 | 三菱マテリアル株式会社 | 発泡性液体の気泡除去装置 |
| JPH10312990A (ja) * | 1997-05-14 | 1998-11-24 | Tadahiro Omi | 化学反応方法および化学反応装置 |
| WO2001068952A1 (en) * | 2000-03-17 | 2001-09-20 | Ebara Corporation | Method and apparatus for electroplating |
| JP2002363792A (ja) * | 2001-06-01 | 2002-12-18 | Tokyo Electron Ltd | 液処理システム及び液処理方法 |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005064016A (ja) * | 2003-08-11 | 2005-03-10 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2007070730A (ja) * | 2005-09-07 | 2007-03-22 | Rohm & Haas Electronic Materials Llc | 金属デュプレックス及び方法 |
| KR100744417B1 (ko) | 2006-08-11 | 2007-07-30 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조 장치 |
| US9677188B2 (en) | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
| US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| US10840101B2 (en) | 2009-06-17 | 2020-11-17 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
| US10301738B2 (en) | 2009-06-17 | 2019-05-28 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| US9721800B2 (en) | 2009-06-17 | 2017-08-01 | Novellus Systems, Inc. | Apparatus for wetting pretreatment for enhanced damascene metal filling |
| US9828688B2 (en) | 2009-06-17 | 2017-11-28 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| US9852913B2 (en) | 2009-06-17 | 2017-12-26 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
| CN103866365A (zh) * | 2012-12-11 | 2014-06-18 | 诺发系统公司 | 电镀填充真空电镀槽 |
| US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| US10128102B2 (en) | 2013-02-20 | 2018-11-13 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| CN104005077A (zh) * | 2014-05-14 | 2014-08-27 | 上海交通大学 | 优化温度场分布的电镀装置及其电镀方法 |
| CN104005077B (zh) * | 2014-05-14 | 2016-11-09 | 上海交通大学 | 优化温度场分布的电镀装置及其电镀方法 |
| US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
| JP2021123732A (ja) * | 2020-02-03 | 2021-08-30 | 株式会社東設 | 鍍金方法及びその装置 |
| JP2023082465A (ja) * | 2021-12-02 | 2023-06-14 | トヨタ自動車株式会社 | 金属皮膜の成膜装置 |
| JP7669916B2 (ja) | 2021-12-02 | 2025-04-30 | トヨタ自動車株式会社 | 金属皮膜の成膜装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7503830B2 (en) | Apparatus for reduction of defects in wet processed layers | |
| US12424453B2 (en) | Low temperature direct copper-copper bonding | |
| US7850836B2 (en) | Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate | |
| JP5743907B2 (ja) | スルーシリコンビア(tsv)内にチップ−チップ間、チップ−ウェハー間及びウェハー−ウェハー間の銅インターコネクトを電着するプロセス | |
| TWI656246B (zh) | 電鍍用鹼前處理 | |
| US10224208B2 (en) | Plating method and recording medium | |
| JP2003129283A (ja) | メッキ処理装置及びそれを用いた半導体装置の製造方法 | |
| WO2002090623A1 (fr) | Bain galvanoplastique et procede pour substrat de galvanoplastie faisant appel audit bain | |
| JP2013543051A (ja) | 加熱された基板および冷却された電解質を用いるシリコン貫通ビア(tsv)における銅のチップトゥチップ、チップトゥウェハおよびウェハトゥウェハの相互接続物の電着のための方法 | |
| JPWO2018150971A1 (ja) | 半導体素子及びその製造方法 | |
| US20040188260A1 (en) | Method of plating a semiconductor structure | |
| TWI451006B (zh) | 導電性結構之形成方法、鍍覆裝置及鍍覆方法 | |
| US20060199381A1 (en) | Electro-chemical deposition apparatus and method of preventing cavities in an ecd copper film | |
| CN110473828A (zh) | 电镀铜填充工艺方法 | |
| JP6895927B2 (ja) | 半導体装置の製造装置および半導体装置の製造方法 | |
| JPH02129393A (ja) | 半導体装置の製造方法 | |
| US7025861B2 (en) | Contact plating apparatus | |
| JP4553632B2 (ja) | 基板めっき方法及び基板めっき装置 | |
| JP2018014448A (ja) | 基板の製造方法及び基板 | |
| WO2010133550A1 (en) | Method for coating a semiconductor substrate by electrodeposition | |
| JP2006225715A (ja) | めっき装置及びめっき方法 | |
| KR101372205B1 (ko) | 리드 프레임 및 그 제조방법 | |
| JP2002115075A (ja) | メッキ装置及びメッキ方法 | |
| TW202446999A (zh) | 半導體電化學電鍍工具 | |
| JP2025077683A (ja) | pH・酸化還元電位調整水の製造装置、pH・酸化還元電位調整水の製造方法および半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040824 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040824 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20040824 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050728 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050809 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050921 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061212 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070410 |