JP2003114387A - 反射屈折光学系および該光学系を備える投影露光装置 - Google Patents
反射屈折光学系および該光学系を備える投影露光装置Info
- Publication number
- JP2003114387A JP2003114387A JP2001308754A JP2001308754A JP2003114387A JP 2003114387 A JP2003114387 A JP 2003114387A JP 2001308754 A JP2001308754 A JP 2001308754A JP 2001308754 A JP2001308754 A JP 2001308754A JP 2003114387 A JP2003114387 A JP 2003114387A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- mirror
- catadioptric
- image
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001308754A JP2003114387A (ja) | 2001-10-04 | 2001-10-04 | 反射屈折光学系および該光学系を備える投影露光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001308754A JP2003114387A (ja) | 2001-10-04 | 2001-10-04 | 反射屈折光学系および該光学系を備える投影露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003114387A true JP2003114387A (ja) | 2003-04-18 |
JP2003114387A5 JP2003114387A5 (US06195213-20010227-M00001.png) | 2005-08-18 |
Family
ID=19128013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001308754A Pending JP2003114387A (ja) | 2001-10-04 | 2001-10-04 | 反射屈折光学系および該光学系を備える投影露光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2003114387A (US06195213-20010227-M00001.png) |
Cited By (39)
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WO2004107011A1 (ja) * | 2003-05-06 | 2004-12-09 | Nikon Corporation | 投影光学系、露光装置及び露光方法 |
JP2005115127A (ja) * | 2003-10-09 | 2005-04-28 | Nikon Corp | 反射屈折投影光学系、露光装置及び露光方法 |
WO2005098506A1 (en) * | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Catadioptric projection objective |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US7218453B2 (en) | 2005-02-04 | 2007-05-15 | Carl Zeiss Smt Ag | Projection system, in particular for a microlithographic projection exposure apparatus |
EP1828829A1 (de) * | 2004-12-23 | 2007-09-05 | Carl Zeiss SMT AG | Hochaperturiges objektiv mit obskurierter pupille |
US7309870B2 (en) | 2003-05-06 | 2007-12-18 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
JP2008516434A (ja) * | 2004-10-08 | 2008-05-15 | カール ツァイス エスエムテー アクチェンゲゼルシャフト | 投影光学系 |
CN100405119C (zh) * | 2003-05-06 | 2008-07-23 | 株式会社尼康 | 投影光学系统、曝光装置及曝光方法 |
EP2006739A2 (en) | 2004-01-14 | 2008-12-24 | Carl Zeiss SMT AG | Catadioptric projection objective |
US7557996B2 (en) | 2005-04-29 | 2009-07-07 | Carl Zeiss Smt Ag | Projection objective |
JP2010026526A (ja) * | 2009-10-26 | 2010-02-04 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
US7672047B2 (en) | 2004-01-14 | 2010-03-02 | Carl Zeiss Smt Ag | Catadioptric projection objective |
US7682031B2 (en) | 2004-12-23 | 2010-03-23 | Carl Zeiss Smt Ag | Catoptric objectives and systems using catoptric objectives |
EP2189848A2 (en) | 2004-07-14 | 2010-05-26 | Carl Zeiss SMT AG | Catadioptric projection objective |
US7738188B2 (en) | 2006-03-28 | 2010-06-15 | Carl Zeiss Smt Ag | Projection objective and projection exposure apparatus including the same |
US7755839B2 (en) | 2003-12-19 | 2010-07-13 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal lens |
US7782538B2 (en) | 2003-12-15 | 2010-08-24 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
US7869138B2 (en) | 2006-03-27 | 2011-01-11 | Carl Zeiss Smt Ag | Projection objective and projection exposure apparatus with negative back focus of the entry pupil |
US7920338B2 (en) | 2006-03-28 | 2011-04-05 | Carl Zeiss Smt Gmbh | Reduction projection objective and projection exposure apparatus including the same |
JP2011257762A (ja) * | 2011-07-04 | 2011-12-22 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
US8169694B2 (en) | 2005-09-13 | 2012-05-01 | Carl Zeiss Smt Gmbh | Catoptric objectives and systems using catoptric objectives |
US8199400B2 (en) | 2004-01-14 | 2012-06-12 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
US8411251B2 (en) | 2006-12-28 | 2013-04-02 | Carl Zeiss Smt Gmbh | Optical element and illumination optics for microlithography |
JP2013191871A (ja) * | 2013-05-13 | 2013-09-26 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US8705005B2 (en) | 2006-02-17 | 2014-04-22 | Carl Zeiss Smt Gmbh | Microlithographic illumination system |
JP2014194552A (ja) * | 2014-04-28 | 2014-10-09 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
US8913316B2 (en) | 2004-05-17 | 2014-12-16 | Carl Zeiss Smt Gmbh | Catadioptric projection objective with intermediate images |
JP2015096959A (ja) * | 2005-05-12 | 2015-05-21 | 株式会社ニコン | 投影光学系、露光装置、および露光方法 |
JP2016075931A (ja) * | 2015-11-30 | 2016-05-12 | 株式会社ニコン | 露光装置、露光方法およびデバイス製造方法 |
US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US10488759B2 (en) | 2005-05-03 | 2019-11-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US10495981B2 (en) | 2005-03-04 | 2019-12-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Families Citing this family (1)
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TW538256B (en) | 2000-01-14 | 2003-06-21 | Zeiss Stiftung | Microlithographic reduction projection catadioptric objective |
-
2001
- 2001-10-04 JP JP2001308754A patent/JP2003114387A/ja active Pending
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US9885959B2 (en) | 2003-04-09 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
KR101521407B1 (ko) * | 2003-05-06 | 2015-05-18 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
KR20150034817A (ko) * | 2003-05-06 | 2015-04-03 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
EP1630585A1 (en) * | 2003-05-06 | 2006-03-01 | Nikon Corporation | Projection optical system, and exposure apparatus and exposure method |
KR101481935B1 (ko) * | 2003-05-06 | 2015-01-14 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
KR101516141B1 (ko) | 2003-05-06 | 2015-05-04 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
US9933705B2 (en) | 2003-05-06 | 2018-04-03 | Nikon Corporation | Reduction projection optical system, exposure apparatus, and exposure method |
US9606443B2 (en) | 2003-05-06 | 2017-03-28 | Nikon Corporation | Reducing immersion projection optical system |
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CN100405119C (zh) * | 2003-05-06 | 2008-07-23 | 株式会社尼康 | 投影光学系统、曝光装置及曝光方法 |
KR101790914B1 (ko) | 2003-05-06 | 2017-10-26 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
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WO2004107011A1 (ja) * | 2003-05-06 | 2004-12-09 | Nikon Corporation | 投影光学系、露光装置及び露光方法 |
US9500943B2 (en) | 2003-05-06 | 2016-11-22 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
KR101516140B1 (ko) | 2003-05-06 | 2015-05-04 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
KR101647934B1 (ko) | 2003-05-06 | 2016-08-11 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
US9086635B2 (en) | 2003-05-06 | 2015-07-21 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9081295B2 (en) | 2003-05-06 | 2015-07-14 | Nikon Corporation | Catadioptric projection optical system, exposure apparatus, and exposure method |
EP2672307A3 (en) * | 2003-05-06 | 2014-07-23 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
EP2722703A3 (en) * | 2003-05-06 | 2014-07-23 | Nikon Corporation | Projection optical system, and exposure apparatus and exposure method |
EP1630585A4 (en) * | 2003-05-06 | 2010-07-14 | Nikon Corp | OPTICAL PROJECTION SYSTEM AND EXPOSURE APPARATUS, AND EXPOSURE METHOD |
EP2722702A3 (en) * | 2003-05-06 | 2014-07-23 | Nikon Corporation | Projection optical system, and exposure apparatus and exposure method |
KR101516142B1 (ko) | 2003-05-06 | 2015-05-04 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
US7190530B2 (en) | 2003-08-12 | 2007-03-13 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
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JP2011257762A (ja) * | 2011-07-04 | 2011-12-22 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
JP2013191871A (ja) * | 2013-05-13 | 2013-09-26 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
JP2014194552A (ja) * | 2014-04-28 | 2014-10-09 | Nikon Corp | 反射屈折型の投影光学系、露光装置、および露光方法 |
JP2016075931A (ja) * | 2015-11-30 | 2016-05-12 | 株式会社ニコン | 露光装置、露光方法およびデバイス製造方法 |
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