JP2003101241A - Insulating film and multilayer wiring board using the same - Google Patents

Insulating film and multilayer wiring board using the same

Info

Publication number
JP2003101241A
JP2003101241A JP2001290914A JP2001290914A JP2003101241A JP 2003101241 A JP2003101241 A JP 2003101241A JP 2001290914 A JP2001290914 A JP 2001290914A JP 2001290914 A JP2001290914 A JP 2001290914A JP 2003101241 A JP2003101241 A JP 2003101241A
Authority
JP
Japan
Prior art keywords
insulating film
layer
liquid crystal
elastic modulus
coating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001290914A
Other languages
Japanese (ja)
Other versions
JP4508498B2 (en
Inventor
Katsura Hayashi
桂 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001290914A priority Critical patent/JP4508498B2/en
Publication of JP2003101241A publication Critical patent/JP2003101241A/en
Application granted granted Critical
Publication of JP4508498B2 publication Critical patent/JP4508498B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Laminated Bodies (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem wherein an insulating film composed of an- organic material and a multilayer wiring board using the insulating film cannot satisfy the high density, the insulating property, the continuity reliability, and the high-frequency transmission characteristic of an interconnection. SOLUTION: In the insulating film, epoxy resins and coating layers 2 which are composed of an organic substance having a coefficient of elasticity lower than that of the epoxy resins are formed on the surface and the rear surface of a liquid crystal polymer layer 1, the layer 1 has a coefficient of thermal expansion in the direction of the layer of -20 to 20×10<-6> / deg.C and a tensile modulus of elasticity of 2 GPa or more, and the coating layers 2 have a tensile modulus of elasticity in the direction of the layers of 6.2 to 1.5 GPa. It is possible to obtain the insulating film whose insulating property, continuity reliability and high-frequency transmission characteristic are superior.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、各種AV機器や家
電機器・通信機器・コンピュータやその周辺機器等の電
子機器に使用される絶縁フィルムおよびこれを用いた多
層配線基板に関し、特に液晶ポリマーを一部に用いた絶
縁フィルムおよびこれを用いた多層配線基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulating film used in various kinds of electronic equipment such as AV equipment, home electric appliances, communication equipment, computers and peripheral equipment thereof, and a multilayer wiring board using the same, and particularly to a liquid crystal polymer. The present invention relates to an insulating film used in part and a multilayer wiring board using the same.

【0002】[0002]

【従来の技術】従来、半導体素子等の能動部品や容量素
子・抵抗素子等の受動部品を多数搭載して所定の電子回
路を構成して成る混成集積回路に用いられる多層配線基
板は、通常、ガラスクロスにエポキシ樹脂を含浸させて
成る絶縁フィルムにドリルによって上下に貫通孔を形成
し、この貫通孔内部および絶縁層表面に複数の配線導体
を形成した配線基板を、多数積層することによって形成
されている。
2. Description of the Related Art Conventionally, a multilayer wiring board used for a hybrid integrated circuit in which a large number of active components such as semiconductor elements and passive components such as capacitance elements and resistance elements are mounted to form a predetermined electronic circuit is usually Formed by stacking a number of wiring boards, each having a plurality of wiring conductors formed inside the through hole and on the surface of the insulating layer by forming through holes in the insulating film made of glass cloth impregnated with epoxy resin by a drill. ing.

【0003】一般に、現在の電子機器は、移動体通信機
器に代表されるように小型・薄型・軽量・高性能・高機
能・高品質・高信頼性が要求されており、このような電
子機器に搭載される混成集積回路等の電子部品も小型・
高密度化が要求されるようになってきている。そして、
このような高密度化の要求に応えるために、電子部品を
構成する多層配線基板も、配線導体の微細化や絶縁層の
薄層化・貫通孔の微細化が必要となってきている。この
ため、近年、貫通孔を微細化するために、ドリル加工よ
り微細加工が可能なレーザ加工が用いられるようになっ
てきた。
In general, current electronic devices are required to be small, thin, lightweight, high-performance, high-performance, high-quality and highly reliable, as represented by mobile communication devices. Electronic components such as hybrid integrated circuits mounted on
There is a growing demand for higher density. And
In order to meet such demands for higher density, it has become necessary to miniaturize wiring conductors, thin insulating layers, and miniaturize through-holes also in multilayer wiring boards constituting electronic components. For this reason, in recent years, in order to miniaturize the through holes, laser machining, which enables finer machining than drilling, has come to be used.

【0004】しかしながら、ガラスクロスにエポキシ樹
脂を含浸させて成る絶縁フィルムは、ガラスクロスをレ
ーザにより穿設加工することが困難なために貫通孔の微
細化には限界があり、また、ガラスクロスの厚みが不均
一のために均一な孔径の貫通孔を形成することが困難で
あるという問題点を有していた。
However, the insulating film formed by impregnating glass cloth with an epoxy resin has a limit in miniaturizing the through holes because it is difficult to drill the glass cloth with a laser, and the glass cloth of There is a problem that it is difficult to form a through hole having a uniform hole diameter due to the uneven thickness.

【0005】このような問題点を解決するために、アラ
ミド樹脂繊維で製作した不織布にエポキシ樹脂を含浸さ
せた絶縁フィルムや、ポリイミドフィルムにエポキシ系
接着剤を塗布した絶縁フィルムを絶縁層に用いた多層配
線基板が提案されている。
In order to solve such a problem, an insulating film obtained by impregnating a non-woven fabric made of aramid resin fiber with an epoxy resin or an insulating film obtained by coating a polyimide film with an epoxy adhesive is used as an insulating layer. Multilayer wiring boards have been proposed.

【0006】しかしながら、アラミド不織布やポリイミ
ドフィルムを用いた絶縁フィルムは吸湿性が高く、吸湿
した状態で半田リフローを行なうと半田リフローの熱に
より吸湿した水分が気化してガスが発生し、絶縁フィル
ム間で剥離してしまう等の問題点を有していた。
However, an insulating film using an aramid non-woven fabric or a polyimide film has a high hygroscopic property, and when solder reflow is performed in a moisture-absorbed state, moisture absorbed by the solder reflow is vaporized to generate a gas, and However, there is a problem such as peeling off.

【0007】このような問題点を解決するために、多層
配線基板の絶縁層の材料として液晶ポリマーを用いるこ
とが検討されている。液晶ポリマーから成る層は、剛直
な分子で構成されているとともに分子同士が規則的に並
んだ構成をしており分子間力が強いことから、高耐熱性
・高弾性率・高寸法安定性・低吸湿性を示し、ガラスク
ロスのような強化材を用いる必要がなく、また、微細加
工性にも優れるという特徴を有している。さらに、高周
波領域においても、低誘電率・低誘電正接であり高周波
特性に優れるという特徴を有している。
In order to solve such a problem, it has been studied to use a liquid crystal polymer as a material for an insulating layer of a multilayer wiring board. The liquid crystal polymer layer is composed of rigid molecules and has a structure in which the molecules are regularly arranged and the intermolecular force is strong, so high heat resistance, high elastic modulus, high dimensional stability, It has low hygroscopicity, does not require the use of a reinforcing material such as glass cloth, and has excellent fine workability. Further, even in a high frequency region, it has a characteristic that it has a low dielectric constant and a low dielectric loss tangent and is excellent in high frequency characteristics.

【0008】このような液晶ポリマーの特徴を活かし、
特開平8-97565号公報には、回路層が第1の液晶ポリマ
ーを含み、この回路層間に第1の液晶ポリマーの融点よ
りも低い融点を有する第2の液晶ポリマーを含む接着剤
層を挿入して成る多層プリント回路基板が提案されてお
り、また、特開平8-293579号公報には、表面に回路パタ
ーンが形成された液晶ポリマーフィルムを間にプリプレ
グを介して積層して成る基板の片面にベアチップを複数
個実装して成るマルチチップモジュールが提案されてい
る。
Utilizing the characteristics of such a liquid crystal polymer,
JP-A-8-97565 discloses that a circuit layer contains a first liquid crystal polymer, and an adhesive layer containing a second liquid crystal polymer having a melting point lower than that of the first liquid crystal polymer is inserted between the circuit layers. A multilayer printed circuit board made of is proposed, and in Japanese Unexamined Patent Publication No. 8-293579, one side of a board formed by laminating a liquid crystal polymer film having a circuit pattern formed on the surface with a prepreg interposed therebetween. There has been proposed a multi-chip module in which a plurality of bare chips are mounted.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、特開平
8-97565号公報に提案された多層プリント回路基板は、
回路層同士を間に液晶ポリマーを含む接着剤層を挿入し
て熱圧着により接着する際、液晶ポリマー分子が剛直で
あるとともにある程度分子が規則正しく配向して分子が
密に並んでいるために分子が動き難く、回路層の液晶ポ
リマーと接着剤層の液晶ポリマーは表面のごく一部の分
子だけしか絡み合うことができず密着性が悪くなり、高
温バイアス試験において層間で剥離して絶縁不良が発生
してしまうという問題点を有していた。また、回路層の
導体箔と液晶ポリマーを熱融着により接着する際、液晶
ポリマー分子が動き難いために導体箔表面の微細な凹部
に入ることができず、その結果、十分なアンカー効果を
発揮することができず、導体箔と液晶ポリマーとの密着
性が悪くなって、高温高湿下において両者間で剥離して
導体箔が断線してしまうという問題点も有していた。
SUMMARY OF THE INVENTION
The multilayer printed circuit board proposed in 8-97565 is
When an adhesive layer containing a liquid crystal polymer is inserted between the circuit layers and they are bonded by thermocompression bonding, the molecules of the liquid crystal polymer are rigid and the molecules are regularly aligned to a certain degree so that the molecules are closely arranged. It is difficult to move, and the liquid crystal polymer of the circuit layer and the liquid crystal polymer of the adhesive layer can only entangle only a small part of the molecules on the surface, resulting in poor adhesion and peeling between layers during high temperature bias test, resulting in insulation failure. It had a problem that it would end up. Also, when the conductor foil of the circuit layer and the liquid crystal polymer are bonded by heat fusion, the liquid crystal polymer molecules are difficult to move and therefore cannot enter the minute recesses on the conductor foil surface, resulting in sufficient anchoring effect. However, the adhesiveness between the conductor foil and the liquid crystal polymer deteriorates, and there is a problem that the conductor foil peels off between the two under high temperature and high humidity and the conductor foil is broken.

【0010】また、特開平8-293579号公報に提案された
マルチチップモジュールは、低吸湿性であるとともに低
透湿性である液晶ポリマーフィルムでプリプレグを挟む
ことによりマルチチップモジュール内部への水分の浸透
を防止して耐湿性を向上することができるものの、回路
パターンに接する液晶ポリマーフィルムおよびプリプレ
グは、その誘電率が異なる材料であることから、100M
Hz以上の高周波信号を伝送する場合に、インピーダン
スマッチングを行うことが非常に困難であるとともに、
回路パターンの上下面において高周波信号の伝播遅延時
間が異なるために信号に歪を生じて伝送損失が大きくな
ってしまうという問題点を有していた。
Further, the multi-chip module proposed in Japanese Unexamined Patent Publication No. 8-293579 discloses a multi-chip module in which a prepreg is sandwiched between liquid crystal polymer films having low hygroscopicity and low moisture permeability. However, since the liquid crystal polymer film and prepreg in contact with the circuit pattern have different dielectric constants,
It is very difficult to perform impedance matching when transmitting high frequency signals of Hz or higher, and
The propagation delay time of the high frequency signal is different between the upper and lower surfaces of the circuit pattern, so that the signal is distorted and the transmission loss becomes large.

【0011】本発明はかかる従来技術の問題点に鑑み案
出されたものであり、その目的は、高密度な配線を有す
るとともに、絶縁信頼性・導通信頼性・高周波伝送特性
に優れた絶縁フィルムおよびこれを用いた多層配線基板
を提供することに有る。
The present invention has been devised in view of the problems of the prior art, and an object thereof is an insulating film having high-density wiring and excellent in insulation reliability, conduction reliability, and high frequency transmission characteristics. And to provide a multilayer wiring board using the same.

【0012】[0012]

【課題を解決するための手段】本発明の絶縁フィルム
は、液晶ポリマー層の上下面にエポキシ樹脂およびこれ
よりも低弾性率の有機物から成る被覆層を形成して成
り、液晶ポリマー層は、層方向における熱膨張係数が-2
0〜20×10-6/℃であるとともに、引張り弾性率が2G
Pa以上であり、被覆層は、層方向の引張り弾性率が0.
2〜1.5GPaであることを特徴とするものである。
The insulating film of the present invention is formed by forming a coating layer made of an epoxy resin and an organic material having a lower elastic modulus than that on the upper and lower surfaces of the liquid crystal polymer layer, and the liquid crystal polymer layer is a layer. Coefficient of thermal expansion in the direction is -2
0 to 20 × 10 -6 / ° C and a tensile elastic modulus of 2G
Pa or more, the coating layer has a tensile elastic modulus in the layer direction of 0.
It is characterized by being 2 to 1.5 GPa.

【0013】また、本発明の絶縁フィルムは、上記構成
において、被覆層が低弾性率の有機物を5〜60体積%含
有することを特徴とするものである。
Further, the insulating film of the present invention is characterized in that, in the above constitution, the coating layer contains 5 to 60% by volume of an organic material having a low elastic modulus.

【0014】さらに、本発明の絶縁フィルムは、上記構
成において、低弾性率の有機物が20〜80体積%のスチレ
ン系有機物を含有することを特徴とするものである。
Further, the insulating film of the present invention is characterized in that, in the above-mentioned constitution, the low elastic modulus organic material contains 20 to 80% by volume of the styrene organic material.

【0015】また、本発明の絶縁フィルムは、上記構成
において、被覆層の厚みの合計が絶縁フィルムの厚みの
10〜70%であることを特徴とするものである。
Further, in the insulating film of the present invention, in the above constitution, the total thickness of the coating layers is the thickness of the insulating film.
It is characterized by being 10 to 70%.

【0016】さらに、本発明の多層配線基板は、上下面
の少なくとも一方の面に金属箔から成る配線導体が配設
された上記の絶縁フィルムを複数積層して成るととも
に、この絶縁フィルムを挟んで上下に位置する配線導体
間を絶縁フィルムに形成された貫通導体を介して電気的
に接続したことを特徴とするものである。
Further, the multilayer wiring board of the present invention is formed by laminating a plurality of the above-mentioned insulating films in which wiring conductors made of metal foil are provided on at least one of the upper and lower surfaces, and sandwiching the insulating films. It is characterized in that the wiring conductors located above and below are electrically connected to each other through a penetrating conductor formed in an insulating film.

【0017】本発明の絶縁フィルムによれば、液晶ポリ
マー層の層方向における熱膨張係数を−20〜20×10-6
℃、引張り弾性率を2GPa以上とし、被覆層の層方向
の引張り弾性率を0.2〜1.5GPaとしたことから、絶縁
フィルムが温度変化により熱膨張・熱収縮する際に、層
方向の引張り弾性率が0.2〜1.5GPaと低弾性率である
被覆層が、熱膨張係数が小さく高弾性率の液晶ポリマー
層に拘束され、熱膨張・熱収縮の小さなものとなり、そ
の結果、急激な温度変化をともなう温度サイクル試験に
おいても被覆層にクラックが発生することのない絶縁フ
ィルムとすることができる。
According to the insulating film of the present invention, the coefficient of thermal expansion in the layer direction of the liquid crystal polymer layer is −20 to 20 × 10 −6 /
℃, the tensile modulus of elasticity is 2GPa or more, and the tensile modulus of the coating layer in the layer direction is 0.2 to 1.5GPa. Therefore, when the insulating film thermally expands and contracts due to temperature change, the tensile modulus of the layer direction. The coating layer having a low elastic modulus of 0.2 to 1.5 GPa is constrained by the liquid crystal polymer layer having a small thermal expansion coefficient and a high elastic modulus, resulting in a small thermal expansion / contraction, resulting in a rapid temperature change. It is possible to obtain an insulating film in which a coating layer does not crack even in a temperature cycle test.

【0018】また、本発明の絶縁フィルムによれば、上
記構成において、被覆層がエポキシ樹脂よりも低弾性率
の有機物を5〜60体積%含有することから、被覆層の弾
性率を容易に0.2〜1.5GPaの範囲にすることができ
る。
Further, according to the insulating film of the present invention, in the above structure, the coating layer contains 5 to 60% by volume of an organic material having a lower elastic modulus than that of the epoxy resin. It can be in the range of up to 1.5 GPa.

【0019】さらに、本発明の絶縁フィルムによれば、
上記構成において、低弾性率の有機物が20〜80体積%の
スチレン系有機物を含有することから、このスチレン系
有機物が低誘電率・低誘電正接であり被覆層の誘電率お
よび誘電正接を小さくすることができ、その結果、100
MHz以上の高周波においても伝送特性に優れた絶縁フ
ィルムとすることができる。
Further, according to the insulating film of the present invention,
In the above structure, since the low elastic modulus organic matter contains 20 to 80% by volume of the styrene organic matter, the styrene organic matter has a low dielectric constant and low dielectric loss tangent, and reduces the dielectric constant and the dielectric loss tangent of the coating layer. Can result in 100
It is possible to obtain an insulating film having excellent transmission characteristics even at high frequencies of MHz or higher.

【0020】また、本発明の絶縁フィルムによれば、上
記構成において、被覆層の厚みの合計を絶縁層の厚みの
10〜70%としたことから、配線導体との密着性が良好で
高耐熱性・低吸湿性・高寸法安定性の絶縁フィルムとす
ることができる。
Further, according to the insulating film of the present invention, in the above-mentioned constitution, the total thickness of the coating layers is calculated as the total thickness of the insulating layers.
Since the content is 10 to 70%, it is possible to obtain an insulating film having good adhesion to the wiring conductor, high heat resistance, low moisture absorption, and high dimensional stability.

【0021】さらに、本発明の多層配線基板によれば、
多層配線基板を上記の絶縁フィルムを用いて形成したこ
とから、絶縁信頼性・導通信頼性・高周波伝送特性に優
れた多層配線基板とすることができる。
Further, according to the multilayer wiring board of the present invention,
Since the multilayer wiring board is formed by using the above-mentioned insulating film, it is possible to obtain a multilayer wiring board having excellent insulation reliability, conduction reliability, and high frequency transmission characteristics.

【0022】[0022]

【発明の実施の形態】次に本発明の絶縁フィルムおよび
これを用いた多層配線基板を添付の図面に基づいて詳細
に説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Next, an insulating film of the present invention and a multilayer wiring board using the same will be described in detail with reference to the accompanying drawings.

【0023】図1は、本発明の絶縁フィルムの実施の形
態の一例を示す断面図であり、また、図2は、図1の絶
縁フィルムを用いて形成した多層配線基板に半導体素子
等の電子部品を搭載して成る混成集積回路の実施の形態
の一例を示す断面図である。さらに、図3は、図2に示
す多層配線基板の配線導体の幅方向の要部拡大断面図で
ある。これらの図において1は液晶ポリマー層、2は被
覆層で、主にこれらで本発明の絶縁フィルム3が構成さ
れている。また、4は配線導体、5は貫通導体で、主に
絶縁フィルム3と配線導体4と貫通導体5とで本発明の
多層配線基板6が構成されている。なお、本例の多層配
線基板6では、絶縁フィルム3を4層積層して成るもの
を示している。
FIG. 1 is a cross-sectional view showing an example of an embodiment of the insulating film of the present invention, and FIG. 2 is a multilayer wiring board formed by using the insulating film of FIG. It is sectional drawing which shows an example of embodiment of the hybrid integrated circuit which mounts components. Further, FIG. 3 is an enlarged cross-sectional view of a main portion in the width direction of the wiring conductor of the multilayer wiring board shown in FIG. In these figures, 1 is a liquid crystal polymer layer, 2 is a coating layer, and these mainly constitute the insulating film 3 of the present invention. Further, 4 is a wiring conductor, 5 is a through conductor, and the multilayer wiring board 6 of the present invention is mainly composed of the insulating film 3, the wiring conductor 4, and the through conductor 5. In addition, the multilayer wiring board 6 of this example is shown as being formed by laminating four layers of the insulating films 3.

【0024】絶縁フィルム3は、液晶ポリマー層1と、
その上下面に被着形成された被覆層2とから構成されて
おり、これを用いて多層配線基板6を製作した場合、配
線導体4や多層配線基板6に搭載される電子部品7の支
持体としての機能を有する。
The insulating film 3 includes the liquid crystal polymer layer 1 and
When the multilayer wiring board 6 is manufactured by using the coating layer 2 adhered and formed on the upper and lower surfaces thereof, the support for the wiring conductor 4 and the electronic component 7 mounted on the multilayer wiring board 6 is formed. Has the function of.

【0025】なお、ここで液晶ポリマーとは、溶融状態
あるいは溶液状態で液晶性を示すポリマーあるいは光学
的に複屈折する性質を有するポリマーを指し、一般に溶
液状態で液晶性を示すリオトロピック液晶ポリマーや溶
融時に液晶性を示すサーモトロピック液晶ポリマー、あ
るいは、熱変形温度で分類される1型・2型・3型すべ
ての液晶ポリマーを含むものである。
The liquid crystal polymer herein means a polymer exhibiting liquid crystallinity in a molten state or a solution state or a polymer having an optical birefringence property, and generally, a lyotropic liquid crystal polymer exhibiting liquid crystallinity in a solution state or a molten polymer. It includes a thermotropic liquid crystal polymer which sometimes exhibits liquid crystallinity, or all of 1 type, 2 type, and 3 type liquid crystal polymers classified by heat distortion temperature.

【0026】本発明の絶縁フィルム3においては、液晶
ポリマー層1を、温度サイクル信頼性・半田耐熱性・加
工性の観点からは、層方向における熱膨張係数が−20〜
20×10-6/℃であるとともに、引張り弾性率が2GPa
以上、融点が200〜400℃であるものとすることが好まし
い。液晶ポリマー層1は、熱膨張係数が−20×10-6/℃
未満であると、液晶ポリマー層1と被覆層2との熱膨張
係数の差が大きくなって被覆層2にクラックを生じ易く
なる傾向があり、20×10-6/℃を超えると、絶縁フィル
ム3と配線導体4との熱膨張係数の差が大きくなって、
配線導体4付近で被覆層2にクラックを生じ易くなる傾
向がある。また、引張り弾性率が2GPa未満である
と、絶縁フィルム3の曲げ強度が低下して絶縁フィルム
3を多層化した際に反りを生じやすくなる傾向がある。
したがって、液晶ポリマー層1は、層方向における熱膨
張率が−20〜20×10-6/℃であるとともに、引張り弾性
率が2GPa以上であることが好ましく、特に電子部品
7を実装した時の接続信頼性の観点からは熱膨張率が−
10〜10×10-6/℃、融点が250〜350℃であることが好ま
しい。
In the insulating film 3 of the present invention, the liquid crystal polymer layer 1 has a coefficient of thermal expansion in the layer direction of −20 to 20 from the viewpoint of temperature cycle reliability, solder heat resistance and workability.
20 × 10 -6 / ° C and a tensile elastic modulus of 2 GPa
As described above, it is preferable that the melting point is 200 to 400 ° C. The liquid crystal polymer layer 1 has a coefficient of thermal expansion of −20 × 10 −6 / ° C.
When it is less than 20%, the difference in the coefficient of thermal expansion between the liquid crystal polymer layer 1 and the coating layer 2 tends to be large, and the coating layer 2 tends to crack, and when it exceeds 20 × 10 −6 / ° C., the insulating film 3 and the difference in the coefficient of thermal expansion between the wiring conductor 4 become large,
The coating layer 2 tends to be cracked near the wiring conductor 4. If the tensile elastic modulus is less than 2 GPa, the bending strength of the insulating film 3 tends to be low, and the insulating film 3 tends to warp when the insulating film 3 is multilayered.
Therefore, it is preferable that the liquid crystal polymer layer 1 has a coefficient of thermal expansion in the layer direction of −20 to 20 × 10 −6 / ° C. and a tensile elastic modulus of 2 GPa or more, particularly when the electronic component 7 is mounted. From the viewpoint of connection reliability, the coefficient of thermal expansion is −
It is preferably 10 to 10 × 10 −6 / ° C. and the melting point is 250 to 350 ° C.

【0027】なお、液晶ポリマー層1は、層としての物
性を損なわない範囲内で、熱安定性を改善するための酸
化防止剤や耐光性を改善するための紫外線吸収剤等の光
安定剤、難燃性を改善するためのハロゲン系もしくはリ
ン酸系の難燃性剤、アンチモン系化合物やホウ酸亜鉛・
メタホウ酸バリウム・酸化ジルコニウム等の難燃助剤、
潤滑性を改善するための高級脂肪酸や高級脂肪酸エステ
ル・高級脂肪酸金属塩・フルオロカーボン系界面活性剤
等の滑剤、熱膨張係数を調整するため、および/または
機械的強度を向上するための酸化アルミニウムや酸化珪
素・酸化チタン・酸化バリウム・酸化ストロンチウム・
酸化ジルコニウム・酸化カルシウム・ゼオライト・窒化
珪素・窒化アルミニウム・炭化珪素・チタン酸カリウム
・チタン酸バリウム・チタン酸ストロンチウム・チタン
酸カルシウム・ホウ酸アルミニウム・スズ酸バリウム・
ジルコン酸バリウム・ジルコン酸ストロンチウム等の充
填材を含有してもよい。
The liquid crystal polymer layer 1 contains a light stabilizer such as an antioxidant for improving thermal stability and an ultraviolet absorber for improving light resistance as long as the physical properties of the layer are not impaired. Halogen-based or phosphoric acid-based flame retardants to improve flame retardancy, antimony-based compounds and zinc borate.
Flame retardant aids such as barium metaborate and zirconium oxide,
Lubricants such as higher fatty acids and higher fatty acid esters, higher fatty acid metal salts and fluorocarbon surfactants for improving lubricity, aluminum oxide for adjusting the thermal expansion coefficient and / or for improving mechanical strength, Silicon oxide, titanium oxide, barium oxide, strontium oxide,
Zirconium oxide, calcium oxide, zeolite, silicon nitride, aluminum nitride, silicon carbide, potassium titanate, barium titanate, strontium titanate, calcium titanate, aluminum borate, barium stannate,
A filler such as barium zirconate or strontium zirconate may be contained.

【0028】また、上記の充填材等の粒子形状は、略球
状・針状・フレーク状等があり、充填性の観点からは略
球状が好ましい。さらに、粒子径は、通常0.1〜15μm
程度であり、液晶ポリマー層1の厚みよりも小さい。
The shape of particles of the above-mentioned filler and the like may be substantially spherical, needle-like, flake-like, etc. From the viewpoint of filling property, substantially spherical shape is preferable. Furthermore, the particle size is usually 0.1 to 15 μm.
And is smaller than the thickness of the liquid crystal polymer layer 1.

【0029】さらに、液晶ポリマー層1は、被覆層2と
の密着性を高めるために、その表面をバフ研磨・ブラス
ト研磨・ブラシ研磨・プラズマ処理・コロナ処理・紫外
線処理・薬品処理等の方法を用いて中心線表面粗さRa
が0.05〜5μmの値となるように粗化しておくことが好
ましい。中心線表面粗さRaは、半田リフローの際に液
晶ポリマー層1と被覆層2との剥離を防止するという観
点からは0.05μm以上であることが好ましく、表面に被
覆層2を形成する際に空気のかみ込みを防止するという
観点からは5μm以下であることが好ましい。
Further, the liquid crystal polymer layer 1 is subjected to buffing, blasting, brushing, plasma treatment, corona treatment, ultraviolet treatment, chemical treatment, etc. on its surface in order to improve the adhesion with the coating layer 2. Using center line surface roughness Ra
Is preferably roughened to a value of 0.05 to 5 μm. The center line surface roughness Ra is preferably 0.05 μm or more from the viewpoint of preventing separation of the liquid crystal polymer layer 1 and the coating layer 2 during solder reflow, and when forming the coating layer 2 on the surface. From the viewpoint of preventing air entrapment, the thickness is preferably 5 μm or less.

【0030】次に、被覆層2は、後述する配線導体4を
被着形成する際の接着剤の機能を有するとともに、絶縁
フィルム3を用いて多層配線基板6を構成する際に、絶
縁フィルム3同士を積層する際の接着剤の役目を果た
す。このような被覆層2は、エポキシ樹脂およびこれよ
りも低弾性率の有機物から成り、層方向の引っ張り弾性
率が0.2〜1.5GPaであることが好ましい。また、この
ことが重要である。
Next, the coating layer 2 has a function of an adhesive when the wiring conductor 4 which will be described later is adhered and formed, and when the insulating film 3 is used to form the multilayer wiring board 6, the insulating film 3 is used. It plays the role of an adhesive when laminating each other. It is preferable that the coating layer 2 is made of an epoxy resin and an organic material having a lower elastic modulus than that of the epoxy resin and has a tensile elastic modulus in the layer direction of 0.2 to 1.5 GPa. This is also important.

【0031】本発明の絶縁フィルム3によれば、液晶ポ
リマー層1の上下面にエポキシ樹脂およびこれよりも低
弾性率の有機物とから成る被覆層2を形成したことか
ら、エポキシ樹脂分子が液晶ポリマー分子ほど剛直でな
く、また、規則正しい配向性も示さず比較的分子が動き
やすく、その結果、絶縁フィルム3を多層化した場合に
おいても、絶縁フィルム3同士の密着性が良好となり、
高温バイアス試験において絶縁フィルム3間で剥離して
絶縁不良が発生してしまうということはない。また、絶
縁フィルム3表面に配線導体4を配設した場合において
も、エポキシ樹脂分子が配線導体4表面の微細な凹部に
入り込み十分なアンカー効果を発揮することができ、絶
縁フィルム3と配線導体4との密着性が良好となり、そ
の結果、高温高湿下で両者間で剥離して配線導体4が断
線してしまうということもない。さらに、表面に配線導
体4を配設した絶縁フィルム3を複数積層して多層配線
基板6を製作した場合においても、配線導体4の上下面
が同一材料から成る被覆層2と接することから、100M
Hz以上の高周波信号を伝送する場合、インピーダンス
マッチングを行なうことが容易であるとともに、高周波
信号の伝播遅延時間が配線導体4の上下面で同じである
ために信号に歪を生じて伝送損失が大きくなってしまう
ということもない。また、液晶ポリマー層1の層方向に
おける熱膨張係数を−20〜20×10-6/℃、引張り弾性率
を2GPa以上とし、被覆層2の層方向の引張り弾性率
を0.2〜1.5GPaとしたことから、絶縁フィルム3が温
度変化により熱膨張・熱収縮する際に、層方向の引張り
弾性率が0.2〜1.5GPaと低弾性率である被覆層2が熱
膨張係数が小さく高弾性率の液晶ポリマー層1に拘束さ
れ、被覆層2の熱膨張・熱収縮を小さなものとすること
ができ、その結果、急激な温度変化をともなう温度サイ
クル試験においても被覆層2にクラックが生じることが
無い。
According to the insulating film 3 of the present invention, since the coating layers 2 made of an epoxy resin and an organic material having a lower elastic modulus than that of the epoxy resin molecules are formed on the upper and lower surfaces of the liquid crystal polymer layer 1, the epoxy resin molecules are liquid crystal polymer. The molecule is not as rigid as the molecule, and it does not show a regular orientation, and the molecule is relatively easy to move. As a result, even when the insulating films 3 are multilayered, the adhesion between the insulating films 3 is good,
In the high temperature bias test, the insulating films 3 are not separated from each other to cause insulation failure. Even when the wiring conductor 4 is arranged on the surface of the insulating film 3, the epoxy resin molecules can enter into the fine recesses on the surface of the wiring conductor 4 and exert a sufficient anchoring effect, so that the insulating film 3 and the wiring conductor 4 can be exerted. Adhesion to the wiring conductor 4 is improved, and as a result, there is no possibility that the wiring conductor 4 is disconnected due to peeling between the two under high temperature and high humidity. Furthermore, even when a plurality of insulating films 3 having wiring conductors 4 on the surface thereof are laminated to manufacture a multilayer wiring board 6, the upper and lower surfaces of the wiring conductors 4 are in contact with the coating layer 2 made of the same material.
When transmitting a high frequency signal of Hz or more, impedance matching is easy to perform, and since the propagation delay time of the high frequency signal is the same on the upper and lower surfaces of the wiring conductor 4, the signal is distorted and the transmission loss is large. It doesn't happen. Further, the coefficient of thermal expansion in the layer direction of the liquid crystal polymer layer 1 was −20 to 20 × 10 −6 / ° C., the tensile elastic modulus was 2 GPa or more, and the tensile elastic modulus of the coating layer 2 in the layer direction was 0.2 to 1.5 GPa. Therefore, when the insulating film 3 thermally expands / contracts due to temperature change, the coating layer 2 having a low elastic modulus of 0.2 to 1.5 GPa in the layer direction has a small thermal expansion coefficient and a liquid crystal of high elastic modulus. The coating layer 2 is constrained by the polymer layer 1 so that the thermal expansion and thermal contraction of the coating layer 2 can be made small, and as a result, the coating layer 2 is not cracked even in the temperature cycle test involving a rapid temperature change.

【0032】このようなエポキシ樹脂としては、ビスフ
ェノールA型エポキシ樹脂やノボラック型エポキシ樹脂
・グリシジルエステル型エポキシ樹脂等やその誘導体あ
るいはこれらの混合物が用いられ、さらにアミン系化合
物やイミダゾール系化合物・酸無水物系化合物等の硬化
剤や硬化促進剤を添加混合してもよい。
As such an epoxy resin, a bisphenol A type epoxy resin, a novolac type epoxy resin, a glycidyl ester type epoxy resin or the like or a derivative thereof or a mixture thereof is used, and further, an amine compound, an imidazole compound, an acid anhydride is used. A curing agent such as a physical compound or a curing accelerator may be added and mixed.

【0033】なお、被覆層2の引張り弾性率が0.2GP
a未満であると絶縁フィルム3を多層化した場合に剛性
が小さくなり、反りが発生してしまう傾向にある。ま
た、1.5GPaを越えると、高温下で液晶ポリマー層1
が被覆層2を拘束することが困難となる傾向があり、そ
の結果、液晶ポリマー層1を引き伸ばして絶縁フィルム
3の熱膨張を大きなものとしてしまい、電子部品7との
接続部で断線を生じてしまう傾向にある。したがって、
被覆層2は引張り弾性率を0.2〜1.5GPa、好適には0.
7〜1.2GPaとすることが好ましい。
The tensile elastic modulus of the coating layer 2 is 0.2 GP.
If it is less than a, the rigidity tends to decrease when the insulating film 3 is multilayered, and warpage tends to occur. If it exceeds 1.5 GPa, the liquid crystal polymer layer 1 will be heated at high temperature.
Tend to be difficult to restrain the coating layer 2, and as a result, the liquid crystal polymer layer 1 is stretched to increase the thermal expansion of the insulating film 3, resulting in disconnection at the connection with the electronic component 7. Tends to end. Therefore,
The coating layer 2 has a tensile elastic modulus of 0.2 to 1.5 GPa, preferably 0.
It is preferably 7 to 1.2 GPa.

【0034】また、被覆層2は、エポキシ樹脂よりも低
弾性率の有機物を5〜60体積%含有することが好まし
い。
The coating layer 2 preferably contains 5 to 60% by volume of an organic material having a lower elastic modulus than that of the epoxy resin.

【0035】本発明の絶縁フィルム3によれば、被覆層
2がエポキシ樹脂よりも低弾性率の有機物を5〜60体積
%含有していることから、被覆層2の弾性率を容易に0.
2〜1.5GPaの範囲にすることができる。なお、エポキ
シ樹脂よりも低弾性率の有機物の含有率が5体積%未満
であると、被覆層2の引張り弾性率を低くする効果が現
れなくなる傾向にあり、また、60体積%を超えると被覆
層2の引張り弾性率が低くなりすぎて絶縁フィルム3を
多層化して多層配線基板6を製作した場合に、多層配線
基板6が柔らかくなって反ってしまい、その結果、配線
導体4が断線してしまう傾向にある。したがって、被覆
層2のエポキシ樹脂よりも低弾性率の有機物の含有率を
5〜60体積%、最適には20〜40体積%とすることが好ま
しい。
According to the insulating film 3 of the present invention, the coating layer 2 contains 5 to 60% by volume of an organic material having a lower elastic modulus than that of the epoxy resin.
It can be in the range of 2 to 1.5 GPa. If the content of the organic material having a lower elastic modulus than that of the epoxy resin is less than 5% by volume, the effect of lowering the tensile elastic modulus of the coating layer 2 tends not to appear, and if it exceeds 60% by volume, the coating is not performed. When the tensile elastic modulus of the layer 2 becomes too low and the insulating film 3 is multilayered to manufacture the multilayer wiring board 6, the multilayer wiring board 6 becomes soft and warps, and as a result, the wiring conductor 4 is broken. Tends to end. Therefore, it is preferable that the content of the organic material having a lower elastic modulus than that of the epoxy resin of the coating layer 2 is 5 to 60% by volume, and optimally 20 to 40% by volume.

【0036】このようなエポキシ樹脂よりも低弾性率の
有機物としては、弾性率が1GPa以下の樹脂やゴム状
弾性体が用いられ、例えば、天然ゴムやポリブタジエン
・ポリイソプレン・ポリイソブチレン・ネオプレン・ポ
リスルフィドゴム・チオコールゴム・アクリルゴム・ウ
レタンゴム・シリコーンゴム・エビクロロヒドリンゴム
・スチレン−ブタジエンブロック共重合体(SBR)・
水素添加スチレン−ブタジエンブロック共重合体(SE
B・SEBC)・スチレン−ブタジエン−スチレンブロ
ック共重合体(SBS)・水素添加スチレン−ブタジエ
ン−スチレンブロック共重合体(SEBS)・スチレン
−イソプレンブロック共重合体(SIR)・水素添加ス
チレン−イソプレンブロック共重合体(SEP)・スチ
レン−イソプレン−スチレンブロック共重合体(SI
S)・水素添加スチレン−イソプレン−スチレンブロッ
ク共重合体(SEPS)・エチレンプロピレンゴム(E
PR)・エチレンプロピレンジエンゴム(EPDM)・
ブタジエン−アクリロニトリル−スチレン−コアシェル
ゴム(ABS)・メチルメタクリレート−ブタジエン−
スチレン−コアシェルゴム(MBS)・メチルメタクリ
レート−ブチルアクリレート−スチレン−コアシェルゴ
ム(MAS)・オクチルアクリレート−ブタジエン−ス
チレン−コアシェルゴム(MABS)・アルキルアクリ
レート−ブタジエン−アクリロニトリル−スチレンコア
シェルゴム(AABS)・ブタジエン−スチレン−コア
シェルゴム(SBR)およびメチルメタクリレート−ブ
チルアクリレートシロキサンをはじめとするシロキサン
含有コアシェルゴム等のコアシェルタイプの粒子状弾性
体、またはこれらを変性したゴム等が用いられる。
As the organic substance having a lower elastic modulus than such an epoxy resin, a resin or a rubber-like elastic body having an elastic modulus of 1 GPa or less is used, and examples thereof include natural rubber, polybutadiene, polyisoprene, polyisobutylene, neoprene, and polysulfide. Rubber, thiochol rubber, acrylic rubber, urethane rubber, silicone rubber, shrimp chlorohydrin rubber, styrene-butadiene block copolymer (SBR)
Hydrogenated styrene-butadiene block copolymer (SE
B ・ SEBC) ・ styrene-butadiene-styrene block copolymer (SBS) ・ hydrogenated styrene-butadiene-styrene block copolymer (SEBS) ・ styrene-isoprene block copolymer (SIR) ・ hydrogenated styrene-isoprene block Copolymer (SEP) / styrene-isoprene-styrene block copolymer (SI
S) -hydrogenated styrene-isoprene-styrene block copolymer (SEPS) -ethylene propylene rubber (E
PR) / Ethylene propylene diene rubber (EPDM) /
Butadiene-acrylonitrile-styrene-core shell rubber (ABS) -methyl methacrylate-butadiene-
Styrene-core shell rubber (MBS) -methyl methacrylate-butyl acrylate-styrene-core shell rubber (MAS) -octyl acrylate-butadiene-styrene-core shell rubber (MABS) -alkyl acrylate-butadiene-acrylonitrile-styrene core-shell rubber (AABS) -butadiene Core-shell type particulate elastic bodies such as styrene-core shell rubber (SBR) and siloxane-containing core shell rubbers such as methyl methacrylate-butyl acrylate siloxane, or rubbers obtained by modifying these are used.

【0037】なお、これらの低弾性率の有機物は無水マ
レイン酸やエポキシ等の極性基を有する変性剤により変
性を行ってもよい。さらに、これらの低弾性率の有機物
は1種のみを単独で用いても良く、あるいは2種以上を
組み合わせて用いても良い。
The organic material having a low elastic modulus may be modified with a modifier having a polar group such as maleic anhydride or epoxy. Further, these organic compounds having a low elastic modulus may be used alone or in combination of two or more.

【0038】また、本発明の絶縁フィルム3において
は、低弾性率の有機物が20〜80体積%のスチレン系有機
物を含有することが好ましい。本発明の絶縁フィルム3
によれば、低弾性率の有機物が20〜80体積%のスチレン
系有機物を含有することから、このスチレン系有機物が
低誘電率・低誘電正接であり被覆層2の誘電率および誘
電正接を小さくすることができ、その結果、100MHz
以上の高周波においても伝送特性に優れた絶縁フィルム
3とすることができる。
In the insulating film 3 of the present invention, it is preferable that the low elastic modulus organic material contains 20 to 80% by volume of the styrene organic material. Insulating film 3 of the present invention
According to this, since the low elastic modulus organic matter contains 20 to 80% by volume of the styrene organic matter, the styrene organic matter has a low dielectric constant and a low dielectric loss tangent, and the dielectric constant and the dielectric loss tangent of the coating layer 2 are small. Can result in 100MHz
The insulating film 3 having excellent transmission characteristics even at the above high frequencies can be obtained.

【0039】このようなスチレン系有機物を含有する低
弾性率の有機物としては、分子構造中にモノマー単位と
してスチレンを有する有機物であり、特に、SBRやS
EB・SEBC・SBS・SEBS・SIR・SEP・
SISおよびSEPS、またはこれらを変性した低弾性
率の有機物が用いられる。
The low-modulus organic material containing such a styrene-based organic material is an organic material having styrene as a monomer unit in its molecular structure, and particularly SBR and S
EB / SEBC / SBS / SEBS / SIR / SEP /
SIS and SEPS, or low-modulus organic substances obtained by modifying these are used.

【0040】なお、スチレン系有機物の含有量が20体積
%未満であると、低弾性率の有機物の誘電率・誘電正接
が大きなものとなって100MHz以上の高周波領域にお
ける伝送特性が低下してしまう傾向があり、80体積%を
超えると低弾性率の有機物の弾性率が大きくなるために
被覆層2の引張り弾性率を所望の範囲とすることが困難
となる傾向がある。したがって、スチレン系有機物の含
有量は20〜80体積%が好ましい。
When the content of the styrenic organic material is less than 20% by volume, the dielectric constant and dielectric loss tangent of the organic material having a low elastic modulus become large and the transmission characteristics in the high frequency region of 100 MHz or more deteriorate. If it exceeds 80% by volume, the elastic modulus of the organic material having a low elastic modulus increases, so that it tends to be difficult to set the tensile elastic modulus of the coating layer 2 in a desired range. Therefore, the content of the styrenic organic material is preferably 20 to 80% by volume.

【0041】さらに、絶縁フィルム3を積層して加圧す
る際に、被覆層2の流動性を抑制し、後述する貫通導体
5の位置ずれや被覆層2の厚みばらつきを防止するとい
う観点からは、被覆層2は充填材として10体積%以上の
無機絶縁粉末を含有することが好ましい。また、液晶ポ
リマー層1との接着界面および配線導体4との接着界面
での半田リフロー時の剥離を防止するという観点から
は、充填材の含有量を70体積%以下とすることが好まし
い。したがって、被覆層2に、10〜70体積%の充填材を
含有させておくことが好ましい。
Further, from the viewpoint of suppressing the fluidity of the coating layer 2 when laminating the insulating film 3 and applying pressure, it is possible to prevent the displacement of the through conductor 5 and the variation in the thickness of the coating layer 2 which will be described later. The coating layer 2 preferably contains 10% by volume or more of inorganic insulating powder as a filler. Further, from the viewpoint of preventing peeling at the adhesive interface with the liquid crystal polymer layer 1 and the adhesive interface with the wiring conductor 4 during solder reflow, the filler content is preferably 70% by volume or less. Therefore, it is preferable that the coating layer 2 contains 10 to 70% by volume of the filler.

【0042】なお、絶縁フィルム3の厚みは絶縁信頼性
を確保するという観点からは10〜200μmであることが
好ましく、また、被覆層2の厚みの合計は、配線導体4
との接着性を良好にするという観点からは絶縁フィルム
3の厚みの10%以上とすることが好ましい。さらに、高
耐熱性・低吸湿性・高寸法安定性を確保するという観点
からは、70%以下とすることが好ましい。したがって、
被覆層2の厚みの合計は、絶縁フィルム3の厚みの10〜
70%とすることが好ましい。
The thickness of the insulating film 3 is preferably 10 to 200 μm from the viewpoint of ensuring the insulation reliability, and the total thickness of the coating layers 2 is the wiring conductor 4.
From the viewpoint of improving the adhesiveness with, it is preferably 10% or more of the thickness of the insulating film 3. Further, from the viewpoint of ensuring high heat resistance, low hygroscopicity, and high dimensional stability, it is preferably 70% or less. Therefore,
The total thickness of the coating layer 2 is 10 to the thickness of the insulating film 3.
It is preferably 70%.

【0043】このような絶縁フィルム3は、次の方法に
より製作される。
Such an insulating film 3 is manufactured by the following method.

【0044】まず、周知のインフレーション法でフィル
ムの引取方向と幅方向の延伸倍率を調整することによ
り、層方向における熱膨張率が−20〜20×10-6/℃であ
るとともに、引張り弾性率が2GPa以上の液晶ポリマ
ー層1が形成される。そして、この上下表面に、例えば
粒径が0.1〜15μmの酸化珪素等の無機絶縁粉末にエポ
キシ樹脂あるいはシアネート樹脂とこれより低弾性率の
有機物・溶剤・可塑剤・分散剤等を添加して得たペース
トを、従来周知のドクタブレード法等のシート成型法を
採用して被覆層2を形成した後、あるいは上記のペース
ト中に液晶ポリマー層1を浸漬し垂直に引き上げること
によって液晶ポリマー層1の表面に被覆層2を形成した
後、これを60〜100℃の温度で5分〜3時間加熱・乾燥
することにより製作される。
First, the coefficient of thermal expansion in the layer direction is −20 to 20 × 10 −6 / ° C. and the tensile elastic modulus is adjusted by adjusting the draw ratio in the take-up direction and the width direction of the film by a well-known inflation method. Of 2 GPa or more is formed as the liquid crystal polymer layer 1. Then, an epoxy resin or a cyanate resin and an organic substance, a solvent, a plasticizer, a dispersant, etc. having a lower elastic modulus are added to the upper and lower surfaces of an inorganic insulating powder such as silicon oxide having a particle size of 0.1 to 15 μm and the like. Of the liquid crystal polymer layer 1 after the coating layer 2 is formed by using a conventionally known sheet molding method such as a doctor blade method, or by immersing the liquid crystal polymer layer 1 in the paste and pulling it up vertically. After forming the coating layer 2 on the surface, it is manufactured by heating and drying the coating layer 2 at a temperature of 60 to 100 ° C. for 5 minutes to 3 hours.

【0045】次に、本発明の多層配線基板6は、上下面
の少なくとも一方の面に金属箔から成る配線導体4が配
設された絶縁フィルム3を複数積層して成るとともに、
この絶縁フィルム3を挟んで上下に位置する配線導体4
間を絶縁フィルム3に形成された貫通導体5を介して電
気的に接続することにより形成されている。
Next, the multilayer wiring board 6 of the present invention is formed by laminating a plurality of insulating films 3 each having a wiring conductor 4 made of a metal foil disposed on at least one of the upper and lower surfaces thereof.
Wiring conductors 4 located above and below with the insulating film 3 interposed therebetween
It is formed by electrically connecting the gaps through the penetrating conductors 5 formed on the insulating film 3.

【0046】配線導体4は、その厚みが2〜30μmで銅
・金等の良導電性の金属箔から成り、多層配線基板6に
搭載される電子部品7を外部電気回路(図示せず)に電
気的に接続する機能を有する。
The wiring conductor 4 has a thickness of 2 to 30 μm and is made of a metal foil having good conductivity such as copper or gold. The electronic component 7 mounted on the multilayer wiring board 6 is connected to an external electric circuit (not shown). It has a function of electrically connecting.

【0047】このような配線導体4は、絶縁フィルム3
を複数積層する際、配線導体4の周囲にボイドが発生す
るのを防止するという観点から、被覆層2に少なくとも
配線導体4の表面と被覆層2の表面とが平坦となるよう
に埋設されていることが好ましい。また、配線導体4を
被覆層2に埋設する際に、被覆層2の乾燥状態での気孔
率を3〜40体積%としておくと、配線導体4周囲の被覆
層2の樹脂盛り上がりを生じさせず平坦化することがで
きるとともに配線導体4と被覆層2の間に挟まれる空気
の排出を容易にして気泡の巻き込みを防止することがで
きる。なお、乾燥状態での気孔率が40体積%を超える
と、複数積層した絶縁フィルム3を加圧・加熱硬化した
後に被覆層2内に気孔が残存し、この気孔が空気中の水
分を吸着して絶縁性が低下してしまうおそれがあるの
で、被覆層2の乾燥状態での気孔率を3〜40体積%の範
囲としておくことが好ましい。
Such a wiring conductor 4 is composed of the insulating film 3
From the viewpoint of preventing voids from being generated around the wiring conductor 4 when a plurality of wiring conductors are stacked, the wiring conductor 4 is buried so that at least the surface of the wiring conductor 4 and the surface of the coating layer 2 are flat. Is preferred. When the wiring conductor 4 is embedded in the coating layer 2, if the porosity of the coating layer 2 in the dry state is set to 3 to 40% by volume, resin swelling of the coating layer 2 around the wiring conductor 4 does not occur. The air can be flattened and the air trapped between the wiring conductor 4 and the coating layer 2 can be easily discharged to prevent air bubbles from being trapped. When the porosity in the dry state exceeds 40% by volume, pores remain in the coating layer 2 after pressurizing and heating and curing a plurality of laminated insulating films 3, and the pores adsorb moisture in the air. Therefore, it is preferable that the porosity of the coating layer 2 in the dry state is in the range of 3 to 40% by volume because the insulating property may be deteriorated.

【0048】このような被覆層2の乾燥状態での気孔率
は、被覆層2を液晶ポリマー層1の表面上に塗布し乾燥
する際に、乾燥温度や昇温速度等の乾燥条件を適宜調整
することにより所望の値とすることができる。
The porosity of the coating layer 2 in the dry state is appropriately adjusted by adjusting the drying conditions such as the drying temperature and the heating rate when the coating layer 2 is applied on the surface of the liquid crystal polymer layer 1 and dried. By doing so, a desired value can be obtained.

【0049】さらに、絶縁フィルム3に配設された配線
導体4の幅方向の断面形状を、絶縁フィルム3側の底辺
の長さが対向する底辺の長さよりも短い台形状とすると
ともに、絶縁フィルム3側の底辺と側辺との成す角度を
95〜150°とすることが好ましい。絶縁フィルム3に配
設された配線導体4の幅方向の断面形状を、絶縁フィル
ム3側の底辺の長さが対向する底辺の長さよりも短い台
形状とするとともに、絶縁フィルム3側の底辺と側辺と
の成す角度を95〜150°とすることにより、配線導体4
を被覆層2に埋設する際に、配線導体4を被覆層2に容
易に埋設して配線導体4を埋設した後の被覆層2表面を
ほぼ平坦にすることができ、積層の際に空気をかみ込ん
で絶縁性を低下させることのない多層配線基板6とする
ことができる。なお、気泡をかみ込むことなく埋設する
という観点からは、絶縁フィルム3側の底辺と側辺との
成す角度を95°以上とすることが好ましく、配線導体2
を微細化するという観点からは150°以下とすることが
好ましい。
Furthermore, the cross-sectional shape in the width direction of the wiring conductor 4 arranged on the insulating film 3 is a trapezoidal shape in which the length of the bottom side on the insulating film 3 side is shorter than the length of the opposite bottom side, and the insulating film is formed. The angle between the bottom side and the side on the 3 side is
It is preferably set to 95 to 150 °. The cross-sectional shape of the wiring conductor 4 disposed on the insulating film 3 in the width direction is a trapezoid whose base length on the insulating film 3 side is shorter than the length of the opposing base, and By setting the angle formed by the sides with 95 to 150 °, the wiring conductor 4
When the wiring conductor 4 is embedded in the coating layer 2, the wiring conductor 4 can be easily embedded in the coating layer 2 so that the surface of the coating layer 2 after the wiring conductor 4 is embedded can be made substantially flat. It is possible to obtain the multilayer wiring board 6 that does not bite into and deteriorate the insulation. From the viewpoint of embedding air bubbles without biting, it is preferable that the angle formed by the bottom side and the side side of the insulating film 3 side be 95 ° or more.
From the viewpoint of miniaturization, it is preferable that the angle be 150 ° or less.

【0050】また、絶縁フィルム3の層間において、配
線導体4の長さの短い底辺と液晶ポリマー層1との間に
位置する被覆層2の厚みx(μm)が、上下の液晶ポリ
マー層1間の距離をT(μm)、配線導体4の厚みをt
(μm)としたときに、3μm≦0.5T−t≦x≦0.5T
≦35μm(ただし、8μm≦T≦70μm、1μm≦t≦
32μm)であることが好ましい。
In addition, the thickness x (μm) of the coating layer 2 located between the short base of the wiring conductor 4 and the liquid crystal polymer layer 1 between the insulating film 3 is between the upper and lower liquid crystal polymer layers 1. Is T (μm), and the thickness of the wiring conductor 4 is t
(Μm), 3 μm ≦ 0.5T−t ≦ x ≦ 0.5T
≦ 35 μm (however, 8 μm ≦ T ≦ 70 μm, 1 μm ≦ t ≦
32 μm) is preferable.

【0051】液晶ポリマー層1間の距離をT(μm)、
配線導体4の厚みをt(μm)としたときに、配線導体
4の長さの短い底辺と液晶ポリマー層1間の被覆層2の
厚みx(μm)を3μm≦0.5T−t≦x≦0.5T≦35μ
mとすることにより、配線導体4の長さの短い底辺と液
晶ポリマー層1間の距離および配線導体4の長さの長い
底辺と隣接する液晶ポリマー層1間の距離の差をt(μ
m)未満と小さくすることができ、被覆層2の厚みが大
きく異なることから生じる多層配線基板6の反りを防止
することができる。したがって、配線導体4の台形状の
上底側表面と液晶ポリマー層1の間に位置する、被覆層
2の厚みx(μm)を、液晶ポリマー層1間の距離をT
(μm)、配線導体4の厚みをt(μm)としたとき
に、3μm≦0.5T−t≦x≦0.5T≦35μmの範囲とす
ることが好ましい。
The distance between the liquid crystal polymer layers 1 is T (μm),
When the thickness of the wiring conductor 4 is t (μm), the thickness x (μm) of the covering layer 2 between the short base of the wiring conductor 4 and the liquid crystal polymer layer 1 is 3 μm ≦ 0.5T−t ≦ x ≦ 0.5T ≦ 35μ
By setting m, the difference between the distance between the liquid crystal polymer layer 1 and the short base of the wiring conductor 4 and the distance between the liquid crystal polymer layer 1 adjacent to the long bottom of the wiring conductor 4 is t (μ
It is possible to reduce the thickness to less than m) and prevent the warpage of the multilayer wiring board 6 caused by the large difference in the thickness of the coating layer 2. Therefore, the thickness x (μm) of the coating layer 2 located between the trapezoidal upper bottom surface of the wiring conductor 4 and the liquid crystal polymer layer 1 can be calculated by setting the distance between the liquid crystal polymer layers 1 to T
(Μm), where t (μm) is the thickness of the wiring conductor 4, it is preferable that the range is 3 μm ≦ 0.5T−t ≦ x ≦ 0.5T ≦ 35 μm.

【0052】このような配線導体4は、絶縁フィルム3
となる前駆体シートに、公知のフォトレジストを用いた
サブトラクティブ法によりパターン形成した、例えば銅
から成る金属箔を転写法等により被着形成することによ
り形成される。先ず、支持体と成るフィルム上に銅から
成る金属箔を接着剤を介して接着した金属箔転写用フィ
ルムを用意し、次に、フィルム上の金属箔を公知のフォ
トレジストを用いたサブトラクティブ法を使用してパタ
ーン状にエッチングする。この時、パターンの表面側の
側面は、フィルム側の側面に較べてエッチング液に接す
る時間が長いためにエッチングされやすく、パターンの
幅方向の断面形状を台形状とすることができる。なお、
台形の形状は、エッチング液の濃度やエッチング時間を
調整することにより短い底辺と側辺とのなす角度を95〜
150°の台形状とすることができる。そして、この金属
箔転写用フィルムを絶縁フィルム3と成る前駆体シート
に積層し、温度が100〜200℃で圧力が0.5〜10MPaの
条件で10分〜1時間ホットプレスした後、支持体と成る
フィルムを剥離除去して金属箔を絶縁フィルム3と成る
前駆体シート表面に転写させることにより、台形状の上
底側が被覆層2に埋設された配線導体4を形成すること
ができる。
Such a wiring conductor 4 is made up of the insulating film 3
It is formed by depositing a metal foil made of, for example, copper, which is patterned by a subtractive method using a known photoresist, on the precursor sheet to be formed by a transfer method or the like. First, a metal foil transfer film is prepared by adhering a metal foil made of copper on a film serving as a support through an adhesive, and then a metal foil on the film is subjected to a subtractive method using a known photoresist. Is used to etch in a pattern. At this time, the side surface on the surface side of the pattern is more likely to be etched because the side surface on the surface side is in contact with the etching solution for a longer time than the side surface on the film side, and the cross-sectional shape in the width direction of the pattern can be trapezoidal. In addition,
The trapezoidal shape allows the angle between the short base and the side to be adjusted to 95 ~ by adjusting the concentration of the etching solution and the etching time.
It can be trapezoidal at 150 °. Then, this metal foil transfer film is laminated on a precursor sheet which becomes the insulating film 3, and hot pressed for 10 minutes to 1 hour under the conditions of a temperature of 100 to 200 ° C. and a pressure of 0.5 to 10 MPa, and then becomes a support. By removing the film by peeling and transferring the metal foil onto the surface of the precursor sheet which becomes the insulating film 3, the wiring conductor 4 having the trapezoidal upper bottom side embedded in the coating layer 2 can be formed.

【0053】なお、配線導体4の長さの短い底辺と対向
する液晶ポリマー層1間の被覆層2の厚みx(μm)
は、金属箔転写時のホットプレスの圧力を調整すること
により所望の範囲とすることができる。また、配線導体
4は被覆層2との密着性を高めるためにその表面にバフ
研磨・ブラスト研磨・ブラシ研磨・薬品処理等の処理で
表面を粗化しておくことが好ましい。
The thickness x (μm) of the coating layer 2 between the liquid crystal polymer layers 1 facing the short bottom of the wiring conductor 4 is opposite.
Can be set to a desired range by adjusting the pressure of the hot press at the time of transferring the metal foil. Further, in order to improve the adhesion with the coating layer 2, the surface of the wiring conductor 4 is preferably roughened by a treatment such as buffing, blasting, brushing, or chemical treatment.

【0054】また、絶縁フィルム3には、直径が20〜15
0μm程度の貫通導体5が形成されている。貫通導体5
は、絶縁フィルム3を挟んで上下に位置する配線導体4
を電気的に接続する機能を有し、絶縁フィルム3にレー
ザにより穿設加工を施すことにより貫通孔を形成した
後、この貫通孔に銅・銀・金・半田等から成る導電性ペ
ーストを従来周知のスクリーン印刷法により埋め込むこ
とにより形成される。
The insulating film 3 has a diameter of 20 to 15
The through conductor 5 having a thickness of about 0 μm is formed. Through conductor 5
Are the wiring conductors 4 located above and below with the insulating film 3 in between.
Has a function of electrically connecting to each other. After a through hole is formed by performing a drilling process on the insulating film 3 with a laser, a conductive paste made of copper, silver, gold, solder or the like is conventionally provided in the through hole. It is formed by embedding by a known screen printing method.

【0055】本発明の多層配線基板6によれば、絶縁フ
ィルム3を液晶ポリマー層1の上下面にエポキシ樹脂か
ら成る被覆層2を有したものとしたことから、液晶ポリ
マー層1が高耐熱性・高弾性率・高寸法安定性・低吸湿
性であり、ガラスクロスのような強化材を用いなくとも
絶縁フィルム3を構成することが可能となり、その結
果、レーザによる穿設加工が容易となり微細で均一な貫
通孔を形成できる。
According to the multilayer wiring board 6 of the present invention, since the insulating film 3 has the coating layers 2 made of epoxy resin on the upper and lower surfaces of the liquid crystal polymer layer 1, the liquid crystal polymer layer 1 has high heat resistance.・ High elastic modulus, high dimensional stability and low hygroscopicity make it possible to construct the insulating film 3 without using a reinforcing material such as glass cloth. It is possible to form uniform through holes.

【0056】このような多層配線基板6は、上述したよ
うな方法で製作した絶縁フィルム3と成る前駆体シート
の所望の位置に貫通導体5を形成した後、パターン形成
した例えば銅の金属箔を、温度が100〜200℃で圧力が0.
5〜10MPaの条件で10分〜1時間ホットプレスして転
写し、これらを積層して最終的に温度が150〜300℃で圧
力が0.5〜10MPaの条件で30分〜24時間ホットプレス
して完全硬化させることにより製作される。
In such a multilayer wiring board 6, a through conductor 5 is formed at a desired position on a precursor sheet to be the insulating film 3 manufactured by the above-described method, and then a patterned metal foil of copper, for example, is formed. , The temperature is 100-200 ℃ and the pressure is 0.
Transfer by hot pressing for 10 minutes to 1 hour under the condition of 5 to 10 MPa, stacking these, and finally hot pressing under the condition of temperature of 150 to 300 ° C and pressure of 0.5 to 10 MPa for 30 minutes to 24 hours. It is manufactured by being completely cured.

【0057】かくして本発明の多層配線基板6によれ
ば、上記構成の多層配線基板6の上面に形成した配線導
体4の一部から成る接続パッド8に半田等の導体バンプ
9を介して半導体素子等の電子部品7を電気的に接続す
るとともに、多層配線基板6の下面に形成した配線導体
4の一部から成る接続パッド8に半田等の導体バンプ9
を形成することにより配線密度が高く絶縁性に優れた混
成集積回路とすることができる。
Thus, according to the multilayer wiring board 6 of the present invention, the semiconductor element is connected to the connection pad 8 formed of a part of the wiring conductor 4 formed on the upper surface of the multilayer wiring board 6 having the above-mentioned structure via the conductor bump 9 such as solder. And the like electronic components 7 are electrically connected, and at the same time, a conductor bump 9 such as solder is attached to the connection pad 8 formed of a part of the wiring conductor 4 formed on the lower surface of the multilayer wiring board 6.
By forming the above, it is possible to obtain a hybrid integrated circuit having a high wiring density and an excellent insulating property.

【0058】なお、本発明の多層配線基板6は上述の実
施例に限定されるものではなく、本発明の要旨を逸脱し
ない範囲であれば種々の変更は可能であり、例えば、上
述の実施例では4層の絶縁フィルム3を積層することに
よって多層配線基板6を製作したが、2層や3層、ある
いは5層以上の絶縁フィルム3を積層して多層配線基板
6を製作してもよい。また、本発明の多層配線基板6の
上下表面に、1層や2層、あるいは3層以上の有機樹脂
を主成分とする絶縁層から成るビルドアップ層やソルダ
ーレジスト層10・アンダーフィル材11を形成してもよ
い。
The multilayer wiring board 6 of the present invention is not limited to the above-described embodiments, but various modifications can be made without departing from the scope of the present invention. Then, the multilayer wiring board 6 is manufactured by laminating the four layers of the insulating films 3, but the multilayer wiring board 6 may be manufactured by laminating the insulating films 3 of two layers, three layers, or five layers or more. Further, on the upper and lower surfaces of the multilayer wiring board 6 of the present invention, a build-up layer composed of an insulating layer containing one, two or three or more layers of organic resin as a main component, a solder resist layer 10 and an underfill material 11 are provided. You may form.

【0059】[0059]

【発明の効果】本発明の絶縁フィルムによれば、液晶ポ
リマー層の層方向における熱膨張係数を−20〜20×10-6
/℃、引張り弾性率を2GPa以上とし、被覆層の層方
向の引張り弾性率を0.2〜1.5GPaとしたことから、絶
縁フィルムが温度変化により熱膨張・熱収縮する際に、
層方向の引張り弾性率が0.2〜1.5GPaと低弾性率であ
る被覆層が、熱膨張係数が小さく高弾性率の液晶ポリマ
ー層に拘束され、熱膨張・熱収縮の小さなものとなり、
その結果、急激な温度変化をともなう温度サイクル試験
においても被覆層にクラックが発生することのない絶縁
フィルムとすることができる。
According to the insulating film of the present invention, the coefficient of thermal expansion in the layer direction of the liquid crystal polymer layer is −20 to 20 × 10 −6.
/ ° C., the tensile elastic modulus is 2 GPa or more, and the tensile elastic modulus in the layer direction of the coating layer is 0.2 to 1.5 GPa. Therefore, when the insulating film thermally expands and contracts due to temperature change,
The coating layer having a tensile elastic modulus in the layer direction of 0.2 to 1.5 GPa and a low elastic modulus is constrained by a liquid crystal polymer layer having a small coefficient of thermal expansion and a high elastic coefficient, and has a small thermal expansion / contraction.
As a result, it is possible to obtain an insulating film in which cracks do not occur in the coating layer even in a temperature cycle test involving a rapid temperature change.

【0060】また、本発明の絶縁フィルムによれば、上
記構成において、被覆層がエポキシ樹脂よりも低弾性率
の有機物を5〜60体積%含有することから、被覆層の弾
性率を容易に0.2〜1.5GPaの範囲にすることができ
る。
Further, according to the insulating film of the present invention, in the above structure, the coating layer contains 5 to 60% by volume of an organic material having a lower elastic modulus than the epoxy resin, so that the elastic modulus of the coating layer can easily be 0.2. It can be in the range of up to 1.5 GPa.

【0061】さらに、本発明の絶縁フィルムによれば、
上記構成において、低弾性率の有機物が20〜80体積%の
スチレン系有機物を含有することから、このスチレン系
有機物が低誘電率・低誘電正接であり被覆層の誘電率お
よび誘電正接を小さくすることができ、その結果、100
MHz以上の高周波においても伝送特性に優れた絶縁フ
ィルムとすることができる。
Further, according to the insulating film of the present invention,
In the above structure, since the low elastic modulus organic matter contains 20 to 80% by volume of the styrene organic matter, the styrene organic matter has a low dielectric constant and low dielectric loss tangent, and reduces the dielectric constant and the dielectric loss tangent of the coating layer. Can result in 100
It is possible to obtain an insulating film having excellent transmission characteristics even at high frequencies of MHz or higher.

【0062】また、本発明の絶縁フィルムによれば、上
記構成において、被覆層の厚みの合計を絶縁層の厚みの
10〜70%としたことから、配線導体との密着性が良好で
高耐熱性・低吸湿性・高寸法安定性の絶縁フィルムとす
ることができる。
Further, according to the insulating film of the present invention, in the above-mentioned constitution, the total thickness of the coating layers is calculated as the total thickness of the insulating layers.
Since the content is 10 to 70%, it is possible to obtain an insulating film having good adhesion to the wiring conductor, high heat resistance, low moisture absorption, and high dimensional stability.

【0063】さらに、本発明の多層配線基板によれば、
多層配線基板を上記の絶縁フィルムを用いて形成したこ
とから、絶縁信頼性・導通信頼性・高周波伝送特性に優
れた多層配線基板とすることができる。
Further, according to the multilayer wiring board of the present invention,
Since the multilayer wiring board is formed by using the above-mentioned insulating film, it is possible to obtain a multilayer wiring board having excellent insulation reliability, conduction reliability, and high frequency transmission characteristics.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の絶縁フィルムの実施の形態の一例を示
す断面図である。
FIG. 1 is a cross-sectional view showing an example of an embodiment of an insulating film of the present invention.

【図2】本発明の多層配線基板に半導体素子を搭載して
成る混成集積回路の実施の形態の一例を示す断面図であ
る。
FIG. 2 is a sectional view showing an example of an embodiment of a hybrid integrated circuit in which a semiconductor element is mounted on a multilayer wiring board of the present invention.

【図3】図2に示す多層配線基板の要部拡大断面図であ
る。
FIG. 3 is an enlarged cross-sectional view of a main part of the multilayer wiring board shown in FIG.

【符号の説明】[Explanation of symbols]

1・・・・・液晶ポリマー層 2・・・・・被覆層 3・・・・・絶縁フィルム 4・・・・・配線導体 5・・・・・貫通導体 6・・・・・多層配線基板 1 ... Liquid crystal polymer layer 2 ... coating layer 3 ... Insulation film 4 ... Wiring conductor 5 ... Through conductor 6 ... Multilayer wiring board

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 1/11 H05K 1/11 H // C08L 67:00 C08L 67:00 Fターム(参考) 4F006 AA35 AB05 AB34 BA01 CA08 4F100 AB01D AB01E AB33D AB33E AH00B AH00C AK01A AK12B AK12C AK53B AK53C BA03 BA05 BA10B BA10C BA25B BA25C GB41 GB43 JA02A JA11A JG04 JK02A JK02B JK02C JK07A JK07B JK07C JK14 YY00A YY00B YY00C 5E317 AA24 BB01 BB11 CC22 CC25 GG14 5E346 AA32 CC02 CC32 CC38 CC39 CC40 DD02 DD12 DD32 EE01 EE08 EE31 FF01 FF18 HH06 HH16 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H05K 1/11 H05K 1/11 H // C08L 67:00 C08L 67:00 F term (reference) 4F006 AA35 AB05 AB34 BA01 CA08 4F100 AB01D AB01E AB33D AB33E AH00B AH00C AK01A AK12B AK12C AK53B AK53C BA03 BA05 BA10B BA10C BA25B BA25C GB41 GB43 JA02A JA11A JG04 JK02A JK02B JK02C JK07A JK07B JK07C JK14 YY00A YY00B YY00C 5E317 AA24 BB01 BB11 CC22 CC25 GG14 5E346 AA32 CC02 CC32 CC38 CC39 CC40 DD02 DD12 DD32 EE01 EE08 EE31 FF01 FF18 HH06 HH16

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 液晶ポリマー層の上下面にエポキシ樹脂
およびこれよりも低弾性率の有機物から成る被覆層を形
成して成り、前記液晶ポリマー層は、層方向における熱
膨張係数が−20〜20×10-6/℃であるとともに、
引張り弾性率が2GPa以上であり、前記被覆層は、層
方向の引張り弾性率が0.2〜1.5GPaであること
を特徴とする絶縁フィルム。
1. A liquid crystal polymer layer is formed by forming a coating layer on the upper and lower surfaces of an epoxy resin and an organic material having a lower elastic modulus than the epoxy resin, and the liquid crystal polymer layer has a coefficient of thermal expansion in the layer direction of −20 to 20. × 10 -6 / ° C, and
An insulating film having a tensile elastic modulus of 2 GPa or more, and the coating layer having a tensile elastic modulus in the layer direction of 0.2 to 1.5 GPa.
【請求項2】 前記被覆層は、前記低弾性率の有機物を
5〜60体積%含有することを特徴とする請求項1記載
の絶縁フィルム。
2. The insulating film according to claim 1, wherein the coating layer contains the organic material having a low elastic modulus in an amount of 5 to 60% by volume.
【請求項3】 前記低弾性率の有機物は、20〜80体
積%のスチレン系有機物を含有することを特徴とする請
求項1または請求項2記載の絶縁フィルム。
3. The insulating film according to claim 1, wherein the organic material having a low elastic modulus contains 20 to 80% by volume of a styrene-based organic material.
【請求項4】 前記被覆層の厚みの合計が前記絶縁フィ
ルムの厚みの10〜70%であることを特徴とする請求
項1乃至請求項3のいずれかに記載の絶縁フィルム。
4. The insulating film according to claim 1, wherein the total thickness of the coating layers is 10 to 70% of the thickness of the insulating film.
【請求項5】 上下面の少なくとも一方の面に金属箔か
ら成る配線導体が配設された請求項1乃至請求項4のい
ずれかに記載の絶縁フィルムを複数積層して成るととも
に、該絶縁フィルムを挟んで上下に位置する前記配線導
体間を前記絶縁フィルムに形成された貫通導体を介して
電気的に接続したことを特徴とする多層配線基板。
5. The insulating film according to claim 1, wherein a wiring conductor made of a metal foil is provided on at least one of the upper and lower surfaces, and the insulating film is laminated. A multilayer wiring board, characterized in that the wiring conductors located above and below with a pinch therebetween are electrically connected via a penetrating conductor formed in the insulating film.
JP2001290914A 2001-09-25 2001-09-25 Multilayer wiring board Expired - Fee Related JP4508498B2 (en)

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Application Number Priority Date Filing Date Title
JP2001290914A JP4508498B2 (en) 2001-09-25 2001-09-25 Multilayer wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001290914A JP4508498B2 (en) 2001-09-25 2001-09-25 Multilayer wiring board

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JP2003101241A true JP2003101241A (en) 2003-04-04
JP4508498B2 JP4508498B2 (en) 2010-07-21

Family

ID=19113141

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Country Link
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697614A (en) * 1992-09-10 1994-04-08 Mitsubishi Shindoh Co Ltd Multilayer board
JPH09174786A (en) * 1995-12-22 1997-07-08 Japan Gore Tex Inc Oriented material of liquid crystal polymer film having adhesive surface or metallic surface
JPH1034742A (en) * 1996-07-19 1998-02-10 Japan Gore Tex Inc Liquid crystal polymer film and its laminate
JPH10178241A (en) * 1996-12-17 1998-06-30 Multi:Kk Printed wiring board and method for manufacturing the same
JP2000094586A (en) * 1998-09-17 2000-04-04 Asahi Chem Ind Co Ltd Heat-resistant film laminate and its manufacture
JP2000277926A (en) * 1999-03-19 2000-10-06 Kanegafuchi Chem Ind Co Ltd Calculation method for dimension change rate of multilayer bonding sheet, its calculation system, multilayer bonding sheet and flexible both-side metal- plated laminated board thereby, and manufacture thereof
JP2001053198A (en) * 1999-08-12 2001-02-23 Shinko Electric Ind Co Ltd Method for manufacturing multilayer wiring board
JP2001164090A (en) * 1999-12-10 2001-06-19 Techno Polymer Co Ltd Epoxy resin composition

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697614A (en) * 1992-09-10 1994-04-08 Mitsubishi Shindoh Co Ltd Multilayer board
JPH09174786A (en) * 1995-12-22 1997-07-08 Japan Gore Tex Inc Oriented material of liquid crystal polymer film having adhesive surface or metallic surface
JPH1034742A (en) * 1996-07-19 1998-02-10 Japan Gore Tex Inc Liquid crystal polymer film and its laminate
JPH10178241A (en) * 1996-12-17 1998-06-30 Multi:Kk Printed wiring board and method for manufacturing the same
JP2000094586A (en) * 1998-09-17 2000-04-04 Asahi Chem Ind Co Ltd Heat-resistant film laminate and its manufacture
JP2000277926A (en) * 1999-03-19 2000-10-06 Kanegafuchi Chem Ind Co Ltd Calculation method for dimension change rate of multilayer bonding sheet, its calculation system, multilayer bonding sheet and flexible both-side metal- plated laminated board thereby, and manufacture thereof
JP2001053198A (en) * 1999-08-12 2001-02-23 Shinko Electric Ind Co Ltd Method for manufacturing multilayer wiring board
JP2001164090A (en) * 1999-12-10 2001-06-19 Techno Polymer Co Ltd Epoxy resin composition

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