JP2003100921A - Container for optical semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that stress being applied to a translucent cover after sealing increases as a container for an optical semiconductor element, e.g. an imaging element, decreases in size and thickness and the cover is removed from the container. SOLUTION: The container for an optical semiconductor element comprises an insulating basic body 1 having a part 1a for mounting an optical semiconductor element S on the upper surface thereof, a metal frame 2 bonded to the upper surface of the insulating basic body 1 through a sealant 7 while surrounding the mounting part 1a and forming an inner cavity for accommodating the optical semiconductor element S, and a translucent cover 3 bonded to the upper surface of the metal frame 2 through a glass bonding material 8 and accommodating the optical semiconductor element S hermetically in the cavity wherein an active metal solder layer 9 containing at least one kind of titanium, zirconium and hafnium is formed on the surface of the metal frame 2 being bonded to the glass bonding material 8.

Description

Description: BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention
Optical semiconductor element storage container for sealing and storing
In particular, a light semiconductor that uses a low-melting-point alloy for sealing
The present invention relates to a body element storage container. 2. Description of the Related Art Conventionally, an optical semiconductor device such as an image pickup device is housed.
The optical semiconductor element storage container to be used is, for example, aluminum oxide.
Made of an electrically insulating material such as
A concave portion for accommodating an optical semiconductor device in the center and its bottom
Tungsten or molybdenum derived from the surface to the lower surface
Metallization wiring layers made of high melting point metal such as
Having an insulating base and a sealing material on the upper surface of the insulating base.
And the optical semiconductor element is hermetically housed in the recess.
And a translucent lid. An optical semiconductor element is provided on the bottom of the concave portion of the insulating substrate.
The semiconductor is glued and fixed via conductive resin, etc.
Metal electrodes are connected via bonding wires
Electrical connection to the wiring layer, and then the upper surface of the insulating base
The light-transmitting lid is joined via a sealing material so as to close the recess.
Light semi-conductive inside the container consisting of the insulating base and the translucent lid.
The airtight housing of the body element
It becomes an optical semiconductor device. [0004] A seal for bonding a light-transmitting lid to an insulating base is provided.
As a stop material, for example, lead oxide 56 to 66% by weight, boron oxide
4-14% by weight, silicon oxide 1-6% by weight, zinc oxide 0.5-
Gala containing 3% by weight and 0.5-5% by weight of bismuth oxide
10 cordierite compound as filler
Lead-based glass to which about 20% by weight is added is used. Ma
The translucent lid is made of a plate material such as borosilicate glass,
And condenses the image from the camera and guides it to the image sensor. However, this conventional optical semiconductor device package
In the delivery container, the aluminum oxide
Ceramics such as sinters can easily transmit electromagnetic waves,
Therefore, it can be mounted on an external electric circuit board etc. together with other electronic components.
When mounted, mutual interference of electromagnetic waves between adjacent electronic components
The problem that optical semiconductor devices malfunction
Had. Further, this conventional container for storing an optical semiconductor element is provided.
, A sealing material for joining a light-transmitting lid to an insulating substrate
Has a softening and melting temperature as high as about 400 ° C., and
In recent years, optical semiconductor devices have become heat-resistant due to higher density and higher integration.
The insulating base and the translucent lid
Are bonded via an encapsulant, and the insulating base and the translucent lid are
If the optical semiconductor device is hermetically housed inside a container made of
The heat that melts the sealing material acts on the optical semiconductor element housed inside.
The characteristics of the optical semiconductor device can be deteriorated by using
The problem that the device cannot be operated normally
Had. Furthermore, in recent years, the global environmental protection movement
Lead oxides contained in encapsulants are designated as environmentally hazardous substances.
For example, electronic devices containing lead oxide are discarded and released outdoors.
When exposed to wind and rain, lead melts into the environment and
Oxidation that can contaminate and is harmful to the human body
The development of lead-free encapsulants has been required
Was. In order to solve such a problem, an optical half
Place the conductive element storage container in the optical semiconductor element
From the mounting part and its surroundings to the lower surface
Plurality of refractory metals such as tungsten and molybdenum
A substantially flat insulating base having a metallized wiring layer of
It is joined to the upper surface of the
Both have a space inside to accommodate the optical semiconductor element.
And a glass bonding material on the upper surface of this metal frame.
And a translucent lid that is joined through
It is practiced to shield electromagnetic waves by shielding with the body
You. In addition, the aim is to lower the melting point of the glass and to make it non-lead.
In general, silver phosphate glass and tin are used for sealing materials and glass bonding materials.
Use low-melting glass mainly composed of phosphoric acid glass
Is being considered. [0010] However, in recent years,
Imaging devices such as CCD and CMOS are mounted on portable electronic devices.
The miniaturization of optical semiconductor device storage containers has progressed rapidly
The joint area between the insulating base and the metal frame and the metal
The joint area between the frame and the translucent lid is becoming smaller
Mounting on an external electric circuit board such as a PC board
In later bending tests etc., the metal frame and the translucent lid
Stress is easily concentrated on the joint surface of the
Metal frame and glass bonding compared with the bonding strength of glass and glass bonding material
Insufficient bonding strength with materials
The hermetic seal inside the container is broken by the impact of dropping, etc.
Joining the metal frame and the glass joining material that joins the translucent lid
The airtight seal is broken at the part, and light from the image sensor etc.
Deterioration of the characteristics of the semiconductor element or translucency
The lid came off the metal frame, which hindered imaging.
Was causing the problem that The present invention has been made in view of the above problems.
The purpose is small, excellent airtight reliability, and
Opto-semiconductor element inside the container while shielding magnetic waves well
When the optical semiconductor device is housed,
In addition, small, environmentally friendly lead-free
It is an object of the present invention to provide an optical semiconductor element storage container of a mold type. According to the present invention, there is provided an optical semiconductor device comprising:
The shipping container has an insulating part with an optical semiconductor element mounting part on the upper surface.
The base is bonded to the upper surface of the insulating base via a sealing material.
The optical semiconductor element is enclosed inside the mounting part and inside.
Metal frame for forming a cavity to accommodate, and this metal frame
Is bonded to the upper surface of the glass via a glass bonding material
Optical semiconductor comprising a light-transmissive lid for hermetically containing a body element
An element storage container in which a metal frame is
At least one of titanium, zirconium and hafnium on the joint surface
An active metal brazing material layer containing
Material is phosphorous pentoxide 30-40% by weight, tin monoxide 47-60% by weight, acid
1-6% by weight of zinc oxide, 1-4% by weight of aluminum oxide
Filler in glass component containing 1 to 3% by weight of silicon oxide
16 to 45% by weight of cordierite compound as external addition
The encapsulant consists of 50-75% by weight of tin,
10 to 40% by weight of chimon, 1 to 15% by weight of copper and indium
1 to 5% by weight.
Things. According to the container for storing an optical semiconductor element of the present invention.
For example, titanium and gil
Active metal brazing material containing at least one of conium and hafnium
Since the layer was formed, the contact between the metal frame and the glass joining material
A dense oxide layer of active metal is formed on the mating surface and the metal frame
And the glass bonding material can be firmly bonded,
As a result, even when the portable electronic device is impacted by dropping,
Joint between the glass frame and the translucent lid
In minutes, the hermetic seal is not broken and the hermetic reliability is extremely high.
A high optical semiconductor element storage container can be obtained. Further, in the container for storing an optical semiconductor element of the present invention,
According to this, the sealing material for joining the insulating base and the metal frame is made of tin 50.
~ 75wt%, antimony 10 ~ 40wt%, copper 1 ~ 15wt%
And alloys containing 1 to 5% by weight of indium
Therefore, the sealing temperature can be set to 350 ° C or less.
As a result, the insulating base and the metal frame are interposed via the sealing material.
Joined, consisting of an insulating base, a metal frame, and a translucent lid
When the optical semiconductor element is hermetically housed inside the container, use a sealing material.
The heat to be melted acts on the optical semiconductor element housed inside.
Also does not cause deterioration of the characteristics of the optical semiconductor element.
Operate semiconductor devices normally and stably for a long time
It becomes possible. In addition, the sealing material must be conductive.
From the above, the metal frame is connected to the grounding wiring layer formed on the insulating base.
By connecting via a sealing material,
The optical semiconductor device to be shielded by the metal frame
As a result, external noise is transmitted through the metal frame.
It can be effectively prevented from getting inside the
Operate conductor elements normally and stably for a long time
It becomes possible. Next, the present invention will be described with reference to the accompanying drawings.
Will be described in detail. FIG. 1 shows a container for accommodating an optical semiconductor element according to the present invention.
It is sectional drawing which shows an example of embodiment. Smell this figure
1 is an insulating base, 2 is a metal frame, and 3 is a translucent lid.
These mainly accommodate optical semiconductor elements S such as image sensors.
A container 4 is formed. The insulating substrate 1 has a substantially rectangular shape,
A mounting portion 1a of the optical semiconductor element S is provided on the surface.
In a, the optical semiconductor element S is made of a conductive epoxy resin or the like.
Adhesively fixed through a conductive resin J. The insulating substrate 1 is made of an aluminum oxide sintered body.
Yamulite sintered body, aluminum nitride sintered body, nitriding
From electrical insulating materials such as silicon-based sintered bodies and silicon carbide-based sintered bodies
For example, when it is made of aluminum oxide sintered body
If available, aluminum oxide, silicon oxide, magnesium oxide
Organic binder suitable for raw material powders such as calcium and calcium oxide
・ Mix a solvent, plasticizer, dispersant, etc.
This sludge is used for the well-known doctor blade method and curry.
Sheet forming method such as under roll method.
Shape the ceramic green sheet (ceramic raw sheet)
G) and then, afterwards, those ceramic green sheets
Punching and stacking multiple
Manufactured by firing at a high temperature of about 1600 ° C
You. The insulating base 1 is mounted on the insulating base 1 from the vicinity of the mounting portion 1a.
A plurality of metallized wiring layers 5 are formed on the bottom surface.
ing. The mounting portion 1a of the metallized wiring layer 5
Each electrode of the optical semiconductor element S is located at a position near the
Electrically connected via a bonding wire 6, and
The portion led out to the bottom surface of the insulating base 1 has an external electric circuit.
Wiring conductor (not shown) attached via solder or other brazing material
It is. Such a metallized wiring layer 5 has a tongue
Suitable for refractory metal powders such as stainless steel, molybdenum and manganese
Metals obtained by adding and mixing appropriate organic solvents, solvents, plasticizers, etc.
Paste paste using a well-known thick-film method such as screen printing.
Used as a ceramic green sheet to become the insulating base 1
Print and apply in advance, and apply this
Firing on the insulating substrate 1 at the same time
It is formed in a predetermined pattern from the surface to the bottom. What
The metallized wiring layer 5 has a surface made of nickel, gold or the like.
Metals with good conductivity, good corrosion resistance and good wettability with brazing materials
To a thickness of 1 to 20 µm by plating
And effectively prevent oxidation corrosion of the metallized wiring layer 5.
And bonding with metallized wiring layer 5
Connection with wire 6 and metallized wiring layer 5 and external electricity
Extremely strong brazing with circuit wiring conductors
it can. A metal frame 2 is provided on the upper surface of the insulating base 1.
Are joined via a sealing material 7 surrounding the mounting portion 1a,
Further, on the upper surface of the metal frame 2, a translucent lid 3 is provided.
2 via the glass bonding material 8 so as to close the opening K.
And thereby a container for hermetically containing the optical semiconductor element S.
4 is obtained. The joining of the metal frame 2 to the insulating base 1
Is performed after the translucent lid 3 is joined to the metal frame 2.
You. This is performed by softening and melting the glass bonding material 8 as described later.
The temperature is higher than the softening and melting temperature of the sealing material 7 and the insulating substrate 1
If the metal frame 2 is joined to the metal frame 2 first,
When joining the optical plate 3, the sealing material 7 is softened and melted.
As a result, the joint between the insulating base 1 and the metal frame 2 is broken.
It is due to that. The metal frame 2 is made of an iron-nickel-cobalt alloy.
Made of metal material such as gold or iron-nickel alloy, for example, iron
-Rolling of nickel-cobalt alloy ingots
Applying a conventionally known metal working method such as a construction method or a punching method
As a result, it is formed into a frame shape having an opening K at a substantially central portion.
You. The transparent cover 3 is made of borosilicate glass or water.
It is made of translucent plate material such as
It has a function of leading to the optical semiconductor element S.
Is made of borosilicate glass, the translucent lid 3 and
Borosilicate glass mother substrate made by dicing
Of the opening K of the metal frame 2
It is formed in an area larger than the product. The metal frame 2 is connected to the glass around the opening K.
Titanium, zirconium, hafnium on the joint surface with mixture 8
Active metal brazing material layer 9 containing at least one of
The metal frame 2 and the glass bonding material 8 are formed of an active metal brazing material layer.
9 are firmly joined. And the optical half of the present invention
This is important for conductive element storage containers.
You. According to the container for storing an optical semiconductor element of the present invention.
For example, titanium, a bonding surface of the metal frame 2 with the glass bonding material 8
Active metal filter containing one or more of zirconium and hafnium
Since the metal layer 9 is formed, the metal frame 2 is bonded to the glass.
A dense oxide layer of active metal is formed on the joint surface with the material 8
Strong bonding between the metal frame 2 and the glass bonding material 8 becomes possible.
The optical semiconductor element storage container is mounted on portable electronic equipment, etc.
Even if it receives a shock such as dropping, it will be transparent with the metal frame 2
The joint with the lid 3 is not destroyed, as a result
The airtight seal of the device 4 is broken and the optical half of the image sensor etc. housed inside.
The characteristics of the conductive element S may be deteriorated, or
The optical lid 3 was peeled off from the metal frame 2 and hindered imaging.
You won't. The active metal brazing material layer 9 is made of a metal frame.
The bonding surface of the body 2 with the glass bonding material 8 is, for example, Ag-Cu
Eutectic brazing material (Ag 72% by weight, Cu 28% by weight)
2 to 4% by weight of titanium, zirconium, hafnium
Paste consisting of at least one active metal
Brazing material by screen printing or calendar roll method
Print and apply to a thickness of about 70 μm and dry,
Next, at a temperature of about 800 ° C for 60 minutes in a heat treatment furnace in a reducing atmosphere.
By heating for a layer thickness of about 55 μm.
You. At this time, the film thickness is formed on the surface of the active metal brazing material layer 9.
A hydride layer of an active metal of about 3 μm is formed. The activated gold deposited on the metal frame 2
A silver-phosphate glass and an organic resin are formed on the brazing filler metal layer 9.
The paste-like glass material prepared with the binder consisting of
Screen printing method, calendar roll method, etc.
And then apply the light-transmitting lid 3 to the metal frame 2
And pressurize it to close the opening K.
Afterwards, at a temperature of about 500 ° C for 10 minutes in a heat treatment furnace in an oxidizing atmosphere
By heating to a certain degree, a dense oxide layer of the active metal
Formed between the active metal brazing material 9 and the glass bonding material 8
At the same time, the translucent lid 3 is joined to the metal frame 2. Incidentally, titanium, zirconium, hafnium
Less than 2% by weight of any one or more active metals
In this case, the amount of the active metal brazing material layer 9 becomes insufficient,
A tilt that makes it difficult to obtain a strong bond with the lath bonding material 8
If it exceeds 4% by weight, the active metal brazing material layer
9 becomes brittle and the strength of the joint tends to decrease.
You. Therefore, any of titanium, zirconium and hafnium
The content of one or more active metals is 2 to 4% by weight.
Preferably. Further, the active metal brazing material layer 9 after sintering is
Is preferably 10 to 70 μm, and less than 10 μm
Insufficient amount of dense oxide layer of active metal at joint
It is difficult to obtain a strong joint with the glass joining material 8
On the other hand, if it exceeds 70 μm, the active metal filter
Due to the difference in thermal expansion coefficient between the filler layer 9 and the glass bonding material 8.
There is a tendency for the strength of the joint of the user to decrease. Follow
The active metal brazing material layer 9 after sintering has a thickness of 10-70.
It is preferably μm. The glass bonding material 8 is composed of 30 to 40 phosphorous pentoxide.
%, Tin monoxide 47-60% by weight, zinc oxide 1-6% by weight,
1 to 4% by weight of aluminum oxide and 1 to 3 layers of silicon oxide
Cordierite as filler in glass components containing%
Consists of 16-45% by weight of external compound
Therefore, its softening and melting temperature is about 400 ° C,
The edge substrate 1 and the translucent lid 3 are connected via the glass bonding material 8.
Softening and melting temperature of the sealing material 7 joining the combined metallic frame 2
The temperature is higher than about 350 ° C, and the insulating substrate 1
The metal frame 2 in which the lid 3 is bonded via the glass bonding material 8
Are bonded via a sealing material 7, and the insulating base 1 and the metal frame 2 are
An optical semiconductor element S is provided inside a container 4 comprising a light-transmitting lid 3.
Even if the glass bonding material 8 is housed in an airtight manner,
Does not soften and melt at the softening and melting temperature of
Hermetic sealing between the metal frame 2 and the translucent lid 3 is broken.
Never. The glass bonding material 8 should not contain lead.
Therefore, there is no impact on the global environment. The glass bonding material 8 contains less than 30% by weight of phosphorus pentoxide.
If it is full, the softening and melting temperature of the glass will increase,
There is a tendency that the joining of the body 3 to the metal frame 2 at a low temperature becomes difficult.
Yes, and more than 40% by weight, chemical resistance of glass bonding material 8
And the reliability of hermetic sealing of the container 4 is greatly reduced.
Tend to be. Therefore, the amount of phosphorus pentoxide is 30-40 weight
%. The amount of tin monoxide is less than 47% by weight.
, The softening and melting temperature of the glass increases, and the light-transmitting lid
3 tends to be difficult to join to the metal frame 2 at a low temperature.
If it exceeds 60% by weight, the chemical resistance of the glass bonding material 8 is low.
Lowering the reliability of hermetic sealing of the container 4
It is in. Therefore, tin monoxide is in the range of 47-60% by weight.
Specified in the box. Further, the amount of zinc oxide is less than 1% by weight.
If it is full, the softening and melting temperature of the glass will increase,
There is a tendency that the joining of the body 3 to the metal frame 2 at a low temperature becomes difficult.
If it exceeds 6% by weight, crystallization of the glass bonding material 8 proceeds.
And the fluidity of the container 4 decreases, making it difficult to hermetically seal the container 4.
There is a direction. Therefore, zinc oxide is contained in an amount of 1 to 6% by weight.
Specified in a range. Aluminum oxide is less than 1% by weight.
When it is full, the moisture resistance of the glass bonding material 8 decreases,
The reliability of hermetic sealing tends to decrease, exceeding 4% by weight
When the temperature increases, the softening and melting temperature of the glass joining material 8 increases,
Which makes it difficult to join the conductive lid 3 to the metal frame 2 at a low temperature.
There is a direction. Therefore, the amount of aluminum oxide is 1 to 4
It is specified in the range of weight%. The amount of silicon oxide is less than 1% by weight.
The thermal expansion coefficient of the glass joining material 8 and the metal
2 and the thermal expansion coefficient of the translucent lid 3
There is a tendency that the reliability of hermetic sealing of the container 4 is reduced.
Exceeds 3% by weight, the softening and melting temperature of the glass bonding material 8
And the contact of the translucent lid 3 with the metal frame 2 at a low temperature is increased.
Tends to be difficult. Therefore, the amount of silicon oxide is
Is specified in the range of 1 to 3% by weight. Further, a cord added as a filler
Cellulite compounds are less than 16% by weight,
The strength of the lath bonding material 8 decreases, and the hermetic sealing of the container 4 is reliable
Properties tend to be greatly reduced, and more than 45% by weight
Then, the thermal expansion coefficient of the glass joining material 8 becomes small,
Significantly different from the thermal expansion coefficients of the body 2 and the translucent lid 3.
Therefore, the reliability of hermetic sealing of the container 4 tends to decrease.
You. Therefore, the amount of cordierite-based compound is 16 to 45
It is specified in the range of weight%. Further, the joining of the insulating base 1 and the metal frame 2
After joining the translucent plate 3 to the metal frame 2, the sealing material 7
A conventionally well-known screen printing method or the like is applied to the joining area of the metal frame 2.
Is applied beforehand, and this is used to soften the sealing material 7.
Fired at the melting temperature and melt-adhered to the joint area of the metal frame 2
Then, the optical semiconductor element S is mounted on the mounting portion 1a of the insulating base 1.
The optical semiconductor element is bonded and fixed via the conductive resin J.
Metallize each electrode of child S via bonding wire 6
It is electrically connected to the wiring layer 5, and furthermore,
Place the frame body 2 so that the joining surfaces of the two overlap, and
Then, while applying an appropriate load at the softening and melting temperature of the sealing material 7,
This is done by heating. The container for storing an optical semiconductor element of the present invention is
A sealing material for joining the insulating base 1 and the metal frame 2
7, 50 to 75% by weight of tin, 10 to 40% by weight of antimony, copper 1
~ 15 wt% and indium 1-5 wt%
Therefore, its softening melting point is as low as 350 ° C or less.
The insulating base 1 and the metal frame 2 can be sealed with a sealing material 7.
And an insulating substrate 1, a metal frame 2, and a light-transmitting lid.
The optical semiconductor element S is hermetically contained inside the container 4 including the body 3.
When storing, the heat that melts the sealing material
Deterioration of characteristics of optical semiconductor element S even when acting on semiconductor element S
Does not occur, and as a result, the optical semiconductor element S becomes longer.
It is possible to operate normally and stably over a period
Become. The sealing material 7 has a tin content of less than 50% by weight.
, The softening and melting temperature of the sealing material 7 increases,
Hermetic sealing of the container 4 tends to be difficult, while 75
When the amount exceeds%, the mechanical strength of the sealing material 7 decreases,
The reliability of hermetic sealing tends to deteriorate. Therefore, sealing
The amount of tin contained in material 7 is specified in the range of 50-75% by weight.
It is. The amount of antimony is less than 10% by weight.
Then, the softening and melting temperature of the sealing material 7 decreases to 240 ° C. or less,
Reflow resistance tends to deteriorate significantly,
On the other hand, if it exceeds 40% by weight, the softening / melting temperature increases,
There is a tendency that hermetic sealing of the container 4 at a temperature is difficult. Follow
The amount of antimony contained in the sealing material 7 is 10 to 40 weight
% Specified. Further, the copper contained in the sealing material 7 is
Sealant for metallized wiring layer 5 adhered to base 1
7 and its bonding strength
Component is less than 1% by weight.
Stopper 7 and metallized wiring layer 5 adhered to insulating base 1
Bonding strength is weakened, and the reliability of hermetic sealing of the container 4 is high.
Tends to deteriorate in width, while exceeding 15% by weight
As a result, the wettability with the metal frame 2 deteriorates,
It is possible to firmly join the metal frame 2 via the sealing material 7.
It becomes difficult and the reliability of hermetic sealing of the container 4 is greatly deteriorated.
Tend to be. Therefore, the copper contained in the sealing material 7
Is specified in the range of 1 to 15% by weight. The indium contained in the sealing material 7 is
Sealing for metallized wiring layer 5 adhered to insulating substrate 1
A component for improving the wettability of the stopper 7,
If the amount of the film is less than 1% by weight, the sealing material 7 and the insulating substrate 1
The bonding strength with the deposited metallized wiring layer 5 becomes weak.
The reliability of hermetic sealing of the container 4 is greatly reduced.
On the other hand, if it exceeds 5% by weight,
Gold layered on metallized wiring layer 5 and low mechanical strength
The reliability of hermetic sealing of the container 4 is deteriorated due to the formation of an intermetallic compound.
Tend to be. Therefore, a
The amount of indium is specified in the range of 1 to 5% by weight. The sealing material 7 is made of an alloy mainly composed of tin.
It is contained in the atmosphere because of its excellent moisture resistance
Moisture tries to enter the inside of the container 4 through the sealing material 7
However, the ingress of water is effectively prevented and, as a result,
The surface electrode of the optical semiconductor element S housed inside
It is hardly corroded and the optical semiconductor device S operates normally
It is also possible to make it. In the present invention, the sealing material 7 contains lead.
Because it does not contain it, it may cause a burden on the global environment
Nor. Further, in the present invention, the sealing material 7 is
The metal frame 2 is formed on the insulating base 1 because it is electrically conductive.
Wiring layer 5a composed of part of the metallized wiring layer 5
To the inside of the container 4 by connecting the
The optical semiconductor element S to be accommodated is well sealed by the metal frame 2.
As a result, external noise is
To effectively prevent entry into the interior of the container 4 through the
The optical semiconductor element S is normal for a long time, and
It is possible to operate stably. Thus, the container for storing an optical semiconductor element of the present invention.
According to this, the optical semiconductor element S is mounted on the mounting portion 1a of the insulating base 1.
Contact via conductive resin J made of conductive epoxy resin etc.
Attach and fix each electrode of the optical semiconductor element S
Electrically connected to the metallized wiring layer 5 through the
After that, the mounting portion 1a of the insulating base 1 is covered.
Then, the metal frame 2 having the transparent cover 3 bonded to the upper surface is sealed.
Bonding through the material 7, the insulating base 1, the metal frame 2, and the light transmission
The optical semiconductor element S is placed inside the container 4 including the conductive lid 3.
The optical semiconductor device as the final product
The installation is completed. The present invention relates to an example of the above-described embodiment.
It is not limited and does not depart from the gist of the present invention.
Various changes are possible within the frame. For example, metal frame
2 has an opening K at the bottom of the concave shape as shown in the sectional view of FIG.
The shape may have the following. Further, FIG.
As shown in the plan view, the light-transmitting lid 3 is opened to the concave bottom surface.
It may be joined to the inside of the container 4 of the metal frame 2 having the mouth K.
No. According to the container for storing an optical semiconductor element of the present invention.
For example, titanium and gil
Active metal brazing material containing at least one of conium and hafnium
Since the layer was formed, the contact between the metal frame and the glass joining material
A dense oxide layer of active metal is formed on the mating surface and the metal frame
And the glass bonding material can be firmly bonded,
As a result, even when the portable electronic device
Joint part with glass joining material to join frame and translucent lid
The airtight seal is not broken and the airtight reliability is extremely high
It is possible to provide a small optical semiconductor element storage container. The container for storing an optical semiconductor element of the present invention is
According to this, the sealing material for joining the insulating base and the metal frame is made of tin 50.
~ 75wt%, antimony 10 ~ 40wt%, copper 1 ~ 15wt%
And alloys containing 1 to 5% by weight of indium
Therefore, the sealing temperature can be set to 350 ° C or less.
As a result, the insulating base and the metal frame are interposed via the sealing material.
Joined, consisting of an insulating base, a metal frame, and a translucent lid
When the optical semiconductor element is hermetically housed inside the container, use a sealing material.
The heat to be melted acts on the optical semiconductor element housed inside.
Also does not cause deterioration of the characteristics of the optical semiconductor element.
Operate semiconductor devices normally and stably for a long time
It becomes possible. In addition, the sealing material must be conductive.
From the above, the metal frame is connected to the grounding wiring layer formed on the insulating base.
By connecting via a sealing material, it is housed inside the container
Optical semiconductor elements are well shielded by metal frames
As a result, external noise is transmitted through the metal frame to the container.
It can be effectively prevented from entering inside,
Ensure that the body elements operate normally and stably for a long period of time.
It becomes possible.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an example of an embodiment of an optical semiconductor element storage container of the present invention. FIG. 2 is a sectional view showing another example of the embodiment of the optical semiconductor element storage container of the present invention. FIG. 3 is a cross-sectional view showing another example of the embodiment of the optical semiconductor element storage container of the present invention. [Description of Signs] 1... Insulating base 1a... Mounting section 2... Metal frame 3... Cap 4 ...... Container 7 ...... Sealing material 8 ...... Glass bonding material 9 ...... Active metal brazing material Layer S ... Opto semiconductor device

Claims (1)

Claims: 1. An insulating base having an optical semiconductor element mounting portion on an upper surface, and an insulating substrate bonded to an upper surface of the insulating base via a sealing material, surrounding the mounting portion and the light inside. A metal frame for forming a space for accommodating the semiconductor element, and a light-transmissive lid joined to the upper surface of the metal frame via a glass joining material, and for hermetically accommodating the optical semiconductor element in the space. An optical semiconductor element storage container comprising: an active metal brazing material layer containing at least one of titanium, zirconium, and hafnium on a bonding surface with the glass bonding material; Glass bonding material is phosphorous pentoxide 30-40
Wt%, tin monoxide 47-60 wt%, zinc oxide 1-6 wt%, aluminum oxide 1-4 wt% and silicon oxide 1
A glass component containing 3% by weight and a cordierite-based compound as a filler added from 16 to 45% by weight as an external additive, wherein the sealing material is 50 to 75% by weight of tin, 10 to 40% by weight of antimony, An optical semiconductor element storage container comprising 1 to 15% by weight and 1 to 5% by weight of indium.