JP2003100808A - Electronic component and manufacturing method thereof, and circuit board packaging the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase productivity to packaging onto a substrate regarding electronic components to be packaged onto the substrate. SOLUTION: The electronic component has an IC chip 9 that is formed in a plate shape, a connection electrode 8 that is provided at the one surface side, and a salient electrode 10 that is connected to the connection electrode 8 of the IC chip 9. In this case, with the formation surface of the connection electrode 8 of the IC chip 9, the tip of the salient electrode 10 is exposed for covering with a protection layer 11 made of resin.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component having an IC chip, a method of manufacturing the same, and a circuit board on which the electronic component is mounted.

[0002]

2. Description of the Related Art A conventional electronic component of this type has a structure in which a projecting electrode 2 is connected to a connecting electrode of a plate-shaped IC chip 1 as shown in FIG.

As shown in FIG. 12, when the electronic component is mounted on the substrate 3, the protruding electrode 2 is connected to the mounting electrode 4 on the substrate 3 via the solder 5.

[0004]

As shown in FIG. 12, after mounting electronic components on the substrate 3, the IC chip 1 and the substrate 3 are mounted.
A resin was injected in the gap and was cured to form the protective layer 6.

That is, by forming the protective layer 6, the connection strength between the protruding electrode 2 and the mounting electrode 4 and the connection electrode of the IC chip 1 is increased.

However, the protective layer 6 must be individually mounted after mounting each electronic component on the board 3, and the work on the miniaturized board in recent years is difficult and the productivity is low. was there.

Therefore, the present invention aims to increase productivity.

[0008]

In order to achieve this object, the invention of claim 1 of the present invention is an IC chip having a plate-like shape and provided with a connection electrode on at least one surface side thereof, and the IC chip described above. A projection electrode connected to a connection electrode, the connection electrode forming surface of the IC chip is an electronic component in which the tip of the projection electrode is exposed and covered with a protective layer made of resin. Since the connection part of the electrode and the lower part of the protruding electrode are covered with a protective layer made of resin, the strength of both parts becomes stronger, and a protective layer for protecting the protruding electrode part etc. is formed in advance for each electronic component. Therefore, it is not necessary to form a protective layer after mounting on the board, and the productivity is extremely high.

Next, the invention according to claim 2 is the electronic component according to claim 1, wherein the tip of the projection electrode is projected from the protective layer, and since the tip of the projection electrode is projected from the protective layer, the projection is simply formed. The exposed area is wider than that of the electrode whose tip is only exposed from the protective layer.Therefore, when mounting this electronic component on a circuit board, increase the connection strength between this protruding electrode and the mounting electrode on the circuit board. can do.

Next, the invention according to claim 3 is characterized in that the IC chip has a circuit pattern provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer. By adding a filler of silicon oxide to the resin, the coefficient of thermal expansion of the resin becomes close to that of the silicon substrate, and therefore the connection between the protruding electrode and the connection electrode of the IC chip when a thermal load is applied It is possible to prevent damage and peeling of the protective layer from the semiconductor wafer.

Next, the invention of claim 4 is such that:
The electronic component according to claim 3, wherein the opposite side portion of the silicon substrate is provided with an inward slope from the silicon substrate side, and the outer peripheral portion of the protective layer is less likely to be chipped, so that the IC chip is mounted on the circuit board. In doing so, the mounting failure due to the lacking of the protective layer does not occur.

Next, a fifth aspect of the invention is to connect a plurality of connection electrodes to a plurality of connection electrodes provided on a semiconductor wafer, and then supply a resin to the connection electrode formation surface of the semiconductor wafer to a position lower than the tip of the projection electrode. Then, the resin is cured to form a protective layer in which only the tips of the protruding electrodes are projected, and then the semiconductor wafer is cut to form an IC chip. Since the connection electrode, the protruding electrode, and the lower portion of the protruding electrode are covered with the protective layer, the strength of these portions is increased, and moreover, the protective layer of each IC chip can be formed once in the state of the semiconductor wafer, so that the productivity is extremely high. Get higher

Further, since the tip of the bump electrode is exposed without being covered from the time of supplying the resin, a step of removing the tip of the bump electrode by exposing the tip of the protective layer later becomes unnecessary, and the productivity is increased.

Next, an invention according to claim 6 is characterized in that the semiconductor wafer has a circuit pattern provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer. In the method of manufacturing a component, by mixing a filler of silicon oxide into a resin, the coefficient of thermal expansion becomes close to that of the silicon substrate, so that the protruding electrode and the connection electrode of the IC chip when a thermal load is applied are formed. It is possible to prevent damage to the connection portion and peeling of the protective layer from the semiconductor wafer.

Next, the invention of claim 7 is a method of manufacturing an electronic component according to claim 5, wherein the resin supply surface of the semiconductor wafer is cleaned by plasma before the resin supply. As a result, the resin flow becomes smooth, and as a result, a protective layer having a substantially uniform layer thickness can be formed on the semiconductor wafer.

Next, the invention of claim 8 is the method of manufacturing an electronic component according to claim 7, wherein the resin is heated after the resin is supplied to the semiconductor wafer, wherein the supplied resin is softened by heating the resin. Thus, it becomes easy to make the resin layer thickness uniform on the semiconductor wafer.

Next, the invention of claim 9 is the method of manufacturing an electronic component according to claim 8, wherein the semiconductor wafer is rotated after heating the resin, wherein the semiconductor wafer is rotated after the resin is heated and softened. Then, it becomes easy to spread the softened resin to make the layer thickness uniform.

Next, the invention of claim 10 is a method of manufacturing an electronic component according to claim 8, wherein the semiconductor wafer is vibrated after the resin is heated, wherein the semiconductor wafer is vibrated after the resin is heated and softened. Then, it becomes easy to spread the softened resin to make the layer thickness uniform.

Next, the invention of claim 11 is the method of manufacturing an electronic component according to claim 9 or 10, wherein the resin is an epoxy resin, and the epoxy resin is softened by increasing the temperature by heating. However, when it is heated up to a low temperature until then, it softens first, so it can be spread in this state to give a uniform layer thickness, and if the temperature is further raised, it can be cured in this uniform layer thickness state to form a protective layer. It becomes a good one.

Next, the invention of claim 12 is characterized in that the protective layer is made of a transparent material and a cutting mark is provided on the semiconductor wafer.
In the method of manufacturing an electronic component described in (1) above, since the protective layer is a transparent body, the cutting mark on the semiconductor wafer can be seen through, and thus the cutting into the IC chip can be easily performed.

Next, the invention of claim 13 is characterized in that a semiconductor wafer is placed on a base with the semiconductor wafer as the lower surface side and the protective layer as the upper surface side, and the cutting is performed from the protective layer side.
In the method of manufacturing an electronic component described in (3), since the semiconductor wafer is installed on the base as the lower surface side, it is easy to maintain the flatness at the time of cutting, and thus it is easy to accurately cut into IC chips.

Next, the invention of claim 14 is the method of manufacturing an electronic component according to claim 13, wherein the cutting of the protective layer and the cutting of the semiconductor wafer are performed by changing the cutting blades from different directions. Since semiconductor wafers have different hardness, it is easier to cut by changing the cutting blade from different directions.
Also, damage to each cutting blade is less likely to occur.

Next, in the invention of claim 15, the protective layer is first cut and then inverted to cut the semiconductor wafer, and when the protective layer is cut, a notch mark is formed on the outer peripheral portion of the semiconductor wafer. Item 15. The method for manufacturing an electronic component according to Item 14, wherein the protective layer is transparent, so that the protective layer can be cut by checking the cut mark on the semiconductor wafer, and the protective layer can also be cut when the semiconductor wafer is inverted. Appropriate cutting can be performed by checking the notch marks provided in unnecessary portions on the outer periphery of the semiconductor wafer during cutting.

Next, a sixteenth aspect of the present invention is a method for manufacturing an electronic component according to any one of the twelfth to fifteenth aspects, wherein the width of the cutting blade of the protective layer is thicker than the width of the cutting blade of the semiconductor wafer. That is, by increasing the width of the cutting blade of the protective layer, the outer periphery of the protective layer will be inclined toward the inside as it goes upward from the semiconductor wafer side,
As a result, the outer peripheral portion of the protective layer is less likely to be chipped, and
When the C chip is mounted on the circuit board, the mounting failure due to the chipping of the protective layer does not occur.

Next, in the invention of claim 17, the plurality of connection electrodes provided on the semiconductor wafer are respectively connected with the projection electrodes, and then the resin is supplied to the connection electrode formation surface of the semiconductor wafer from the tip of the projection electrodes to a higher level. Then, the resin is cured to form a protective layer, the protective layer is then shaved to expose the tips of the protruding electrodes, and then the semiconductor wafer is cut to form I.
A method of manufacturing an electronic component for forming a C chip, comprising:
Since the connection electrode of the C chip, the protruding electrode, and the lower part of the protruding electrode are covered with the protective layer, the strength of these parts is increased, and the protective layer of each IC chip can be formed once in the state of the semiconductor wafer. Sex is extremely high.

Next, an eighteenth aspect of the present invention is a method for manufacturing an electronic component according to the seventeenth aspect, wherein the protective layer is brought into contact with the polishing surface to be ground, and the protective layer of the semiconductor wafer is brought into contact with the polishing surface. If it is shaved, an uneven surface due to polishing is formed on the exposed surface of the protruding electrode exposed by this step, and thereby the connection strength with the mounting electrode of the circuit board can be increased.

Next, an invention according to claim 19 is characterized in that a semiconductor wafer has a circuit pattern provided on a silicon substrate, and a filler of silicon oxide is mixed in a resin forming a protective layer. In the method of manufacturing a component, by mixing a filler of silicon oxide into a resin, the coefficient of thermal expansion becomes close to that of the silicon substrate, so that the protruding electrode and the connection electrode of the IC chip when a thermal load is applied are formed. It is possible to prevent damage to the connection portion and peeling of the protective layer from the semiconductor wafer.

Next, the invention of claim 20 is the method of manufacturing an electronic component according to claim 17, wherein the resin supply surface of the semiconductor wafer is cleaned with plasma before the resin supply. As a result, the resin flow becomes smooth, and as a result, a protective layer having a substantially uniform layer thickness can be formed on the semiconductor wafer.

Next, the invention of claim 21 is the method of manufacturing an electronic component according to claim 20, wherein the resin is heated after the resin is supplied to the semiconductor wafer, wherein the supplied resin is softened by heating the resin. Thus, it becomes easy to make the resin layer thickness uniform on the semiconductor wafer.

Next, the invention of claim 22 is the method of manufacturing an electronic component according to claim 21, wherein the semiconductor wafer is rotated after heating the resin, wherein the semiconductor wafer is rotated after the resin is heated and softened. Then, it becomes easy to spread the softened resin to make the layer thickness uniform.

Next, the invention of claim 23 is the method of manufacturing an electronic component according to claim 21, wherein the semiconductor wafer is vibrated after the resin is heated, wherein the semiconductor wafer is vibrated after the resin is heated and softened. Then, it becomes easy to spread the softened resin to make the layer thickness uniform.

Next, the invention of claim 24 is the method for producing an electronic component according to claim 22 or 23, wherein the resin is an epoxy resin, and the epoxy resin is softened by increasing the temperature by heating. However, when it is heated up to a low temperature until then, it softens first, so it can be spread in this state to give a uniform layer thickness, and if the temperature is further raised, it can be cured in this uniform layer thickness state to form a protective layer. It becomes a good one.

Next, the invention of claim 25 is characterized in that the protective layer is made of a transparent material and a cutting mark is provided on the semiconductor wafer.
In the method of manufacturing an electronic component according to Item 7, since the protective layer is a transparent body, the cutting mark on the semiconductor wafer can be seen through, and thus the cutting into the IC chip can be easily performed.

In a twenty-sixth aspect of the present invention, a semiconductor wafer is placed on a base with the semiconductor wafer as the lower surface side and the protective layer as the upper surface side, and cutting is performed from the protective layer side.
In the method of manufacturing an electronic component described in (3), since the semiconductor wafer is installed on the base as the lower surface side, it is easy to maintain the flatness at the time of cutting, and thus it is easy to accurately cut into IC chips.

A thirty-seventh aspect of the present invention is the method of manufacturing an electronic component according to the twenty-sixth aspect, wherein the cutting of the protective layer and the cutting of the semiconductor wafer are performed by changing cutting blades from different directions. Since semiconductor wafers have different hardness, it is easier to cut by changing the cutting blade from different directions.
Also, damage to each cutting blade is less likely to occur.

In a twenty-eighth aspect of the present invention, the protective layer is first cut and then inverted to cut the semiconductor wafer, and a cut mark is formed on the outer peripheral portion of the semiconductor wafer when the protective layer is cut. Item 28. The method of manufacturing an electronic component according to Item 27, wherein the protective layer is transparent, so that the protective layer can be cut by confirming a cutting mark on the semiconductor wafer, and the semiconductor layer can be cut upside down when the protective layer is cut. Appropriate cutting can be performed by checking the notch marks provided in unnecessary portions on the outer periphery of the semiconductor wafer during cutting.

Next, the invention of claim 29 is a method of manufacturing an electronic component according to any one of claims 25 to 28, wherein the width of the cutting blade of the protective layer is thicker than the width of the cutting blade of the semiconductor wafer. That is, by increasing the width of the cutting blade of the protective layer, the outer periphery of the protective layer will be inclined toward the inside as it goes upward from the semiconductor wafer side,
As a result, the outer peripheral portion of the protective layer is less likely to be chipped, and
When the C chip is mounted on the circuit board, the mounting failure due to the chipping of the protective layer does not occur.

[0038] Next, the invention of claim 30 is provided with a substrate having a mounting electrode provided on the surface thereof, and an electronic component in which the projecting electrode is connected to the mounting electrode of the substrate, wherein the electronic component is a plate. An IC provided with a connection electrode on at least one surface thereof
A circuit board having a chip and a projection electrode connected to the connection electrode of the IC chip, and a connection electrode formation surface of the IC chip having a tip of the projection electrode exposed and covered with a resin protective layer. In addition, since the connection portion between the connection electrode of the IC chip and the protruding electrode that constitutes the electronic component and the lower portion of the protruding electrode are covered with a protective layer made of resin in advance, the strength of both portions is strong, and therefore the substrate I during or after mounting
It does not occur that the connecting electrode of the C chip is disengaged from the protruding electrode.

A thirty-first aspect of the present invention is the circuit board according to the thirtieth aspect, wherein the tip of the protruding electrode is projected from the protective layer. Since the tip of the protruding electrode is projected from the protective layer, the protrusion is simply formed. The exposed area is wider than that of the electrode whose tip is only exposed from the protective layer.Therefore, when mounting this electronic component on a circuit board, increase the connection strength between this protruding electrode and the mounting electrode on the circuit board. can do.

A thirty-second aspect of the present invention is a circuit according to the thirty-third aspect, wherein the IC chip has a circuit pattern provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer. By mixing the filler of silicon oxide into the resin, the thermal expansion coefficient of the substrate becomes close to that of the silicon substrate, so that the protruding electrode and the IC chip when mounted on the substrate or when a thermal load is applied after mounting. It is possible to prevent the damage to the connection part with the connection electrode and the peeling of the protective layer from the semiconductor wafer.

A thirty-third aspect of the present invention is the circuit board according to the thirty-second aspect, wherein a portion of the outer periphery of the protective layer on the opposite side of the silicon substrate is provided with an inward slope from the silicon substrate side. The outer peripheral portion of the protective layer is less likely to be chipped, and thus I
When the C chip is mounted on the circuit board, the mounting failure due to the chipping of the protective layer does not occur.

An embodiment of the present invention will be described below with reference to the accompanying drawings.

The electronic component 7 shown in FIGS. 1 and 2 is plate-shaped and is provided with a plurality of connection electrodes 8 on at least one side thereof.
The IC chip 9 is provided with a projection electrode 10 made of gold or solder, which is connected to the connection electrode 8 of the IC chip 9, and the connection electrode 8 formation surface of the IC chip 9 exposes the tip of the projection electrode 10. In this state, it is covered with a protective layer 11 made of resin.

Then, in this way, the connection electrodes 8 of the IC chip 9 are
By covering the connecting portion of the protruding electrode 10 and the lower portion of the protruding electrode 10 (on the side of the connecting electrode 8) with the protective layer 11 made of resin, the strength of both portions becomes stronger.

On the other hand, a plurality of mounting electrodes 13 are provided on the substrate 12 as shown in FIG. 2, and the exposed portions of the protruding electrodes 10 of the electronic component 7 are exposed on the mounting electrodes 13 via the solder 14 as shown in FIG. Connected.

In this way, a plurality of electronic components 7 are mounted on the substrate 12 as shown in FIG. 4, and form a functional circuit together with other electronic components 15.

Each electronic component 7 shown in FIG. 4 is shown in FIGS.
Since the protective layer 11 for protecting the protruding electrodes 10 and the like is formed in advance, it is not necessary to form the protective layer 6 as shown in FIG. 12 of the related art after mounting on the substrate 12, resulting in extremely high productivity. .

The method of manufacturing the electronic component 7 will be described below. First, as shown in FIG. 5, a disk-shaped semiconductor wafer 16
The protruding electrodes 10 are respectively connected to the plurality of connecting electrodes (8 in FIG. 2) provided on the semiconductor wafer 16, and then the resin is supplied to the connecting electrode forming surface of the semiconductor wafer 16 to a position lower than the tip of the protruding electrodes 10 as shown in FIG. Then, the resin is cured and the protruding electrode 1
A protective layer 11 is formed by protruding only the tip of 0, and then the semiconductor wafer 16 is cut along a cutting line 17 in FIG. 8 to manufacture the individual electronic components 7 shown in FIG.

In this way, the connection electrodes 8 of the IC chip 9 are
And the protruding electrode 10 and the lower part of the protruding electrode 10 (the connection electrode 8
Since the side) is covered with the protective layer 11, the strength of these portions is increased, and since the protective layer 11 of each IC chip 9 can be formed once in the state of the semiconductor wafer 16, its productivity is extremely high. Become.

Further, since the tip of the bump electrode 10 is exposed without being covered since the resin is supplied, the step of exposing the tip of the bump electrode 10 by scraping the protective layer 11 later is not required, and the productivity is increased.

Further, as shown in FIG. 6, since the tip of the bump electrode 10 is projected from the protective layer 11, the exposed area is wider than that of the tip of the bump electrode 10 which is simply exposed from the protective layer 11. Therefore, when mounting the electronic component 7 on the substrate 12, the connection strength between the protruding electrode 10 and the mounting electrode 13 of the substrate 12 can be increased.

The IC chip 9 has a structure in which a circuit pattern is provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer 11. That is, by mixing the filler of silicon oxide into the resin, the thermal expansion coefficient of the resin becomes close to that of the silicon substrate, so that the connection between the protruding electrode 10 and the connection electrode 8 of the IC chip 9 when a thermal load is applied. Damage and peeling of the protective layer 11 from the semiconductor wafer 16 are less likely to occur.

Next, the step of supplying this resin onto the semiconductor wafer 16 to which the protruding electrodes 10 have been connected will be described in detail.

In this case, first, the resin supply surface (upper surface side in FIG. 5) of the semiconductor wafer 16 is cleaned with plasma before the resin is supplied. By cleaning the resin supply surface in this way, the flow of the resin mixed with the filler becomes smooth, and as a result, the protective layer 11 having a substantially uniform layer thickness can be formed on the semiconductor wafer 16. Because it will be.

Next, after the resin is supplied to the semiconductor wafer 16, the resin is heated by a heating means (not shown). By heating the resin in this manner, the supplied resin is softened, and the layer thickness of the resin on the semiconductor wafer 16 is easily made uniform.

Then, in this state, the semiconductor wafer 16 is rotated together with a base (not shown) supporting the semiconductor wafer 16. By rotating the semiconductor wafer 16, the softened resin is spread to facilitate uniformization of the layer thickness.

Instead of this rotation, the semiconductor wafer 16 may be vibrated after heating the resin so that the softened resin is spread and the layer thickness is made uniform.

In this embodiment, the resin is epoxy type. Epoxy resin cures when the temperature is raised by heating, but it softens first at low temperature heating until then, so spread it in this state to a uniform layer thickness, and then further raise the temperature to obtain this uniform layer thickness state. Curing with protective layer 11
Can be formed and the productivity can be improved.

After the protective layer 11 is formed as described above, next, cutting is performed along the cutting line 17 shown in FIG.

In this embodiment, in order to facilitate this cutting, the protective layer 11 is made of a transparent material, and a cutting mark corresponding to the cutting line 17 in FIG. 8 (1 in FIG. 7) is formed on the semiconductor wafer 16.
8) is provided.

In this way, since the protective layer 11 is a transparent body, the cut mark on the semiconductor wafer 16 can be seen through, and the cutting into the IC chip 9 can be easily performed.

The cutting operation is performed on the semiconductor wafer 16
The semiconductor wafer 16 is placed on the base (not shown) with the semiconductor wafer 16 as the lower surface side and the protective layer 11 as the upper surface side, and the protective layer 11 side is used. If the semiconductor wafer 16 is placed on the base as the lower surface side in this way, it is easy to maintain the flatness at the time of cutting, and thus the IC chip 9 is easily cut accurately.

At this time, the cutting from above is performed up to the protective layer 11, the cutting of the semiconductor wafer 16 is reversed, and the cutting blade is changed.

That is, the cutting of the protective layer 11 and the cutting of the semiconductor wafer 16 are performed by changing the cutting blades from different directions. This is because the hardness of the protective layer 11 and the semiconductor wafer 16 are different. Changing the cutting blades from different directions will result in smoother cutting and less damage to the cutting blades.

When the protective layer 11 is first cut and then the semiconductor wafer 16 is cut by reversing the protective layer 11 as described above, when the protective layer 11 is cut, a notch mark (Fig. (Not shown) is formed.

That is, since the protective layer 11 is transparent, it is possible to cut the protective layer 11 by checking the cut marks 18 on the semiconductor wafer 16. However, since the semiconductor wafer 16 is opaque, it becomes difficult to cut after the inversion. .

Therefore, as described above, the notch mark is provided on the semiconductor wafer 16 when the protective layer 11 is cut.
By doing so, it is possible to properly cut the semiconductor wafer 16 after reversing it by checking the notch mark provided in the unnecessary portion on the outer periphery of the semiconductor wafer when the protective layer is cut.

The width of the cutting blade of the protective layer 11 is thicker than the width of the cutting blade of the semiconductor wafer 16. By increasing the width of the cutting blade of the protective layer 11 in this way, the protective layer 11 is made thicker. As shown in FIG. 2, an inclination 19 is formed on the outer periphery of the protective layer 11 from the side of the semiconductor wafer 16 toward the inner side.
When the chip 9 is mounted on the substrate 12, the mounting failure due to the chipping of the protective layer 11 does not occur.

FIGS. 9 and 10 show another embodiment of the present invention. In this embodiment, a plurality of connection electrodes 8 provided on the semiconductor wafer 16 are respectively connected to the protruding electrodes 10, and then the semiconductor wafer 16 is connected. A resin is supplied to the upper surface of the connection electrode formation surface above the tip of the bump electrode, and then the resin is cured to form a protective layer 11, and then the protective layer 11 is shaved to expose the tip of the bump electrode 10. The semiconductor wafer 1
6 is cut to form the IC chip 9.

The protective layer 11 is abraded by bringing it into contact with the polishing surface of the polishing machine. If the protective layer 11 of the semiconductor wafer 16 is brought into contact with the polishing surface and abraded in this way, this step is performed. As a result, a concavo-convex surface is formed on the exposed surface of the bump electrode 10 exposed by polishing, whereby the connection strength between the substrate 12 and the mounting electrode 13 can be increased.

[0071]

As described above, the present invention is provided with an IC chip having a plate-like shape and provided with a connection electrode on at least one surface thereof, and a projecting electrode connected to the connection electrode of the IC chip. The connection electrode formation surface of the chip is one in which the tip of the protruding electrode is exposed and covered with a resin protective layer,
Since the connection part between the connection electrode of the IC chip and the protruding electrode and the lower part of the protruding electrode are covered with a resin protective layer, the strength of both parts is increased, and moreover, the protruding electrode part and the like are protected in advance for each electronic component. Since the layers are formed, it is not necessary to form a protective layer after mounting on the substrate, and the productivity is extremely high.

[Brief description of drawings]

FIG. 1 is a perspective view of an embodiment of an electronic component of the present invention.

2 is a cross-sectional view showing a process of mounting the electronic component of FIG. 1 on a substrate.

3 is a cross-sectional view of the board after the mounting process of FIG.

FIG. 4 is a perspective view of the board.

FIG. 5 is a perspective view of a semiconductor wafer.

FIG. 6 is an enlarged cross-sectional view of the main part.

FIG. 7 is a perspective view of the main part.

FIG. 8 is a perspective view showing a semiconductor wafer cutting process.

FIG. 9 is a cross-sectional view showing another embodiment of the present invention.

FIG. 10 is a sectional view of the same.

FIG. 11 is a conventional sectional view.

FIG. 12 is an enlarged sectional view of the same main part.

[Explanation of symbols]

7 electronic components 8 connection electrodes 9 IC chip 10 protruding electrode 11 Protective layer 12 substrates 13 Mounting electrode

Claims (33)

[Claims] 1. A plate-shaped IC chip having a connection electrode provided on at least one surface side thereof, and a projection electrode connected to the connection electrode of the IC chip, wherein a connection electrode formation surface of the IC chip has a projection. An electronic component in which the tip of the electrode is exposed and covered with a protective layer made of resin. 2. The electronic component according to claim 1, wherein the tip of the protruding electrode is projected from the protective layer. 3. The electronic component according to claim 1, wherein the IC chip has a structure in which a circuit pattern is provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer. 4. The electronic component according to claim 3, wherein a portion of the outer periphery of the protective layer on the opposite side of the silicon substrate is provided with an inclination inward from the silicon substrate side. 5. A projection electrode is connected to each of a plurality of connection electrodes provided on a semiconductor wafer, and then a resin is supplied to the connection electrode formation surface of the semiconductor wafer below the tip of the projection electrode, and then the resin is cured. A method of manufacturing an electronic component in which a protective layer is formed by protruding only the tips of the protruding electrodes, and then the semiconductor wafer is cut to form an IC chip. 6. The method of manufacturing an electronic component according to claim 5, wherein the semiconductor wafer has a circuit pattern provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer. 7. The method of manufacturing an electronic component according to claim 5, wherein the resin supply surface of the semiconductor wafer is cleaned with plasma before the resin is supplied. 8. The method of manufacturing an electronic component according to claim 7, wherein the resin is heated after the resin is supplied to the semiconductor wafer. 9. The method of manufacturing an electronic component according to claim 8, wherein the semiconductor wafer is rotated after heating the resin. 10. The method of manufacturing an electronic component according to claim 8, wherein the semiconductor wafer is vibrated after heating the resin. 11. The method for manufacturing an electronic component according to claim 9, wherein the resin is an epoxy resin. 12. The method of manufacturing an electronic component according to claim 5, wherein the protective layer is made of a transparent material and a cutting mark is provided on the semiconductor wafer. 13. The method of manufacturing an electronic component according to claim 12, wherein a semiconductor wafer is placed on a base with the semiconductor wafer as the lower surface side and the protective layer as the upper surface side, and the cutting is performed from the protective layer side. 14. The method of manufacturing an electronic component according to claim 13, wherein cutting of the protective layer and cutting of the semiconductor wafer are performed by changing cutting blades from different directions. 15. The electronic component according to claim 14, wherein the protective layer is first cut and then inverted to cut the semiconductor wafer, and a cut mark is formed on an outer peripheral portion of the semiconductor wafer when the protective layer is cut. Manufacturing method. 16. The method of manufacturing an electronic component according to claim 12, wherein a width of the cutting blade of the protective layer is thicker than a width of the cutting blade of the semiconductor wafer. 17. A projection electrode is connected to each of a plurality of connection electrodes provided on a semiconductor wafer, and then a resin is supplied to the connection electrode formation surface of this semiconductor wafer to a position higher than the tip of the projection electrode, and then the resin is cured. Then, a protective layer is formed, the protective layer is then shaved to expose the tips of the protruding electrodes, and then the semiconductor wafer is cut to form an IC chip. 18. The method of manufacturing an electronic component according to claim 17, wherein the protective layer is brought into contact with the polishing surface to be ground. 19. The method of manufacturing an electronic component according to claim 18, wherein the semiconductor wafer has a structure in which a circuit pattern is provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer. 20. The method of manufacturing an electronic component according to claim 17, wherein the resin supply surface of the semiconductor wafer is cleaned with plasma before the resin is supplied. 21. The method of manufacturing an electronic component according to claim 20, wherein the resin is heated after the resin is supplied to the semiconductor wafer. 22. The method of manufacturing an electronic component according to claim 21, wherein the semiconductor wafer is rotated after heating the resin. 23. The method of manufacturing an electronic component according to claim 21, wherein the semiconductor wafer is vibrated after heating the resin. 24. The resin according to claim 22, which is an epoxy resin.
23. A method for manufacturing an electronic component according to 23. 25. The method of manufacturing an electronic component according to claim 17, wherein the protective layer is made of a transparent material, and cutting marks are provided on the semiconductor wafer. 26. The method of manufacturing an electronic component according to claim 25, wherein a semiconductor wafer is placed on a base with the semiconductor wafer being the lower surface side and the protective layer being the upper surface side, and cutting is performed from the protective layer side. 27. The method of manufacturing an electronic component according to claim 26, wherein the cutting of the protective layer and the cutting of the semiconductor wafer are performed by changing cutting blades from different directions. 28. The electronic component according to claim 27, wherein the protective layer is first cut and then inverted to cut the semiconductor wafer, and a cut mark is formed on an outer peripheral portion of the semiconductor wafer when the protective layer is cut. Manufacturing method. 29. The method of manufacturing an electronic component according to claim 25, wherein the width of the cutting blade of the protective layer is thicker than the width of the cutting blade of the semiconductor wafer. 30. A substrate having a mounting electrode on the surface thereof,
An electronic component in which the protruding electrode is connected to a mounting electrode of the substrate is provided, and the electronic component is a plate-shaped IC chip provided with a connection electrode on at least one surface side thereof and the connection electrode of the IC chip. A circuit board having a connected protruding electrode, wherein the connection electrode forming surface of the IC chip is formed by exposing the tip of the protruding electrode and covering it with a protective layer made of resin. 31. The circuit board according to claim 30, wherein the tip of the protruding electrode is projected from the protective layer. 32. The circuit board according to claim 30, wherein the IC chip has a configuration in which a circuit pattern is provided on a silicon substrate, and a filler of silicon oxide is mixed in the resin forming the protective layer. 33. The circuit board according to claim 32, wherein a portion of the outer periphery of the protective layer on the opposite side of the silicon substrate is provided with a slope inward from the silicon substrate side.