JP2003094400A5 - - Google Patents
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- Publication number
- JP2003094400A5 JP2003094400A5 JP2002195692A JP2002195692A JP2003094400A5 JP 2003094400 A5 JP2003094400 A5 JP 2003094400A5 JP 2002195692 A JP2002195692 A JP 2002195692A JP 2002195692 A JP2002195692 A JP 2002195692A JP 2003094400 A5 JP2003094400 A5 JP 2003094400A5
- Authority
- JP
- Japan
- Prior art keywords
- nanotubes
- array
- nanotube
- electron beam
- beam source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002071 nanotube Substances 0.000 claims 15
- 238000010894 electron beam technology Methods 0.000 claims 6
- 238000013500 data storage Methods 0.000 claims 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- 229910052582 BN Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000002041 carbon nanotube Substances 0.000 claims 1
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/900,662 US6928042B2 (en) | 2001-07-06 | 2001-07-06 | Data storage device including nanotube electron sources |
| US09/900662 | 2001-07-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003094400A JP2003094400A (ja) | 2003-04-03 |
| JP2003094400A5 true JP2003094400A5 (enExample) | 2005-10-20 |
Family
ID=25412893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002195692A Pending JP2003094400A (ja) | 2001-07-06 | 2002-07-04 | ナノチューブ電子源を含むデータ記憶デバイス |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6928042B2 (enExample) |
| EP (1) | EP1274092A3 (enExample) |
| JP (1) | JP2003094400A (enExample) |
| CN (1) | CN1396659A (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7260051B1 (en) | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
| US20020138301A1 (en) * | 2001-03-22 | 2002-09-26 | Thanos Karras | Integration of a portal into an application service provider data archive and/or web based viewer |
| US6982898B2 (en) | 2002-10-15 | 2006-01-03 | Nanochip, Inc. | Molecular memory integrated circuit utilizing non-vibrating cantilevers |
| US7233517B2 (en) * | 2002-10-15 | 2007-06-19 | Nanochip, Inc. | Atomic probes and media for high density data storage |
| US6985377B2 (en) | 2002-10-15 | 2006-01-10 | Nanochip, Inc. | Phase change media for high density data storage |
| US20060184843A1 (en) * | 2003-02-14 | 2006-08-17 | Oakley William S | Data recording using carbon nanotube electron sources |
| US20060187802A1 (en) * | 2003-07-03 | 2006-08-24 | Oakley William S | Array of cnt heads |
| US8305861B2 (en) * | 2003-07-03 | 2012-11-06 | Oakley William S | Adaptive read and read-after-write for carbon nanotube recorders |
| FR2862156B1 (fr) * | 2003-11-06 | 2007-01-05 | Commissariat Energie Atomique | Dispositif d'enregistrement de donnees a micro-pointes conductrices et procede de fabrication d'un tel dispositif |
| US20050232061A1 (en) | 2004-04-16 | 2005-10-20 | Rust Thomas F | Systems for writing and reading highly resolved domains for high density data storage |
| US7379412B2 (en) | 2004-04-16 | 2008-05-27 | Nanochip, Inc. | Methods for writing and reading highly resolved domains for high density data storage |
| US20050243660A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | Methods for erasing bit cells in a high density data storage device |
| US7301887B2 (en) | 2004-04-16 | 2007-11-27 | Nanochip, Inc. | Methods for erasing bit cells in a high density data storage device |
| US7620632B2 (en) * | 2004-06-30 | 2009-11-17 | Skyler Technology, Inc. | Method and/or system for performing tree matching |
| CN1300839C (zh) * | 2004-08-06 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | 一种纳电子相变存储器的制备方法 |
| US20080204966A1 (en) * | 2004-09-21 | 2008-08-28 | The Johns Hopkins University | Controlled Transport and Assembly of Nanostructures |
| EP1797604A1 (en) | 2004-09-27 | 2007-06-20 | Koninklijke Philips Electronics N.V. | Electric device with nanowires comprising a phase change material |
| US7190539B1 (en) | 2004-12-29 | 2007-03-13 | Storage Technology Corporation | Magnetic recorder having carbon nanotubes embedded in anodic alumina for emitting electron beams to perform heat-assisted magnetic recording |
| US20060291271A1 (en) * | 2005-06-24 | 2006-12-28 | Nanochip, Inc. | High density data storage devices having servo indicia formed in a patterned media |
| US20070041237A1 (en) * | 2005-07-08 | 2007-02-22 | Nanochip, Inc. | Media for writing highly resolved domains |
| US7463573B2 (en) * | 2005-06-24 | 2008-12-09 | Nanochip, Inc. | Patterned media for a high density data storage device |
| US7367119B2 (en) * | 2005-06-24 | 2008-05-06 | Nanochip, Inc. | Method for forming a reinforced tip for a probe storage device |
| US20070008867A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with a lubricant layer comprised of a field of polymer chains |
| US20070008866A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | Methods for writing and reading in a polarity-dependent memory switch media |
| US20070008865A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with polarity-dependent memory switching media |
| US7309630B2 (en) * | 2005-07-08 | 2007-12-18 | Nanochip, Inc. | Method for forming patterned media for a high density data storage device |
| US7420199B2 (en) | 2005-07-14 | 2008-09-02 | Infineon Technologies Ag | Resistivity changing memory cell having nanowire electrode |
| EP1922743A4 (en) * | 2005-09-06 | 2008-10-29 | Nantero Inc | METHOD AND SYSTEM FOR USING NANOTUBE TISSUES AS OHMIC HEATING ELEMENTS FOR MEMORIES AND OTHER APPLICATIONS |
| US20080001075A1 (en) * | 2006-06-15 | 2008-01-03 | Nanochip, Inc. | Memory stage for a probe storage device |
| US20080175033A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for improving domain stability in a ferroelectric media |
| US20080233672A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Method of integrating mems structures and cmos structures using oxide fusion bonding |
| CN101504948B (zh) * | 2008-02-05 | 2011-04-06 | 财团法人工业技术研究院 | 中空尖笔状结构与包含其的装置及其制造方法 |
| WO2012128763A1 (en) * | 2011-03-23 | 2012-09-27 | Empire Technology Development Llc | Capacitor with parallel nanotubes |
| US10225082B2 (en) | 2016-07-26 | 2019-03-05 | International Business Machines Corporation | Carbon nanotube physical entropy source |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4409850C2 (de) * | 1994-03-22 | 1999-05-12 | Fraunhofer Ges Forschung | Informationsspeichereinheit |
| US5557596A (en) * | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
| KR100365444B1 (ko) | 1996-09-18 | 2004-01-24 | 가부시끼가이샤 도시바 | 진공마이크로장치와이를이용한화상표시장치 |
| US6498349B1 (en) * | 1997-02-05 | 2002-12-24 | Ut-Battelle | Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy |
| US5986381A (en) | 1997-03-14 | 1999-11-16 | Hewlett-Packard Company | Electrostatic actuator with spatially alternating voltage patterns |
| JPH11273551A (ja) * | 1998-03-23 | 1999-10-08 | Nec Corp | 窒化ホウ素を用いた電子放出素子及びその製造方法 |
| JP3403635B2 (ja) | 1998-03-26 | 2003-05-06 | 富士通株式会社 | 表示装置および該表示装置の駆動方法 |
| JP3902883B2 (ja) | 1998-03-27 | 2007-04-11 | キヤノン株式会社 | ナノ構造体及びその製造方法 |
| US6518570B1 (en) * | 1998-04-03 | 2003-02-11 | Brookhaven Science Associates | Sensing mode atomic force microscope |
| EP1054249B1 (en) * | 1998-12-03 | 2007-03-07 | Daiken Chemical Co. Ltd. | Electronic device surface signal control probe and method of manufacturing the probe |
| KR20010011136A (ko) * | 1999-07-26 | 2001-02-15 | 정선종 | 나노구조를 에미터로 사용한 삼극형 전계 방출 에미터의 구조및 그 제조방법 |
| US6519221B1 (en) * | 1999-11-12 | 2003-02-11 | Massachusetts Institute Of Technology | High-density data storage using atomic force microscope |
| US6542400B2 (en) * | 2001-03-27 | 2003-04-01 | Hewlett-Packard Development Company Lp | Molecular memory systems and methods |
-
2001
- 2001-07-06 US US09/900,662 patent/US6928042B2/en not_active Expired - Lifetime
-
2002
- 2002-06-20 EP EP02254312A patent/EP1274092A3/en not_active Withdrawn
- 2002-07-04 JP JP2002195692A patent/JP2003094400A/ja active Pending
- 2002-07-05 CN CN02141131A patent/CN1396659A/zh active Pending
-
2005
- 2005-05-25 US US11/136,882 patent/US7295503B2/en not_active Expired - Lifetime
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