JP2003092311A - Method of mounting ic chip having projecting electrode - Google Patents
Method of mounting ic chip having projecting electrodeInfo
- Publication number
- JP2003092311A JP2003092311A JP2001281309A JP2001281309A JP2003092311A JP 2003092311 A JP2003092311 A JP 2003092311A JP 2001281309 A JP2001281309 A JP 2001281309A JP 2001281309 A JP2001281309 A JP 2001281309A JP 2003092311 A JP2003092311 A JP 2003092311A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- mounting
- bonding
- sealing resin
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
Abstract
Description
【発明の属する技術分野】本発明は突起電極付ＩＣチッ
プの基板への実装方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting an IC chip with protruding electrodes on a substrate.
【従来の技術】近年、半導体パッケージの小型化及び半
導体チップをマザーボートに高密度化実装するため、半
導体チップを直接フェイスダウン方式で、基板上に実装
するフリップチップ実装が開発されている。なかでも、
金のスタッドバンプを使ったフリップチップ実装を安価
に製造する市場要求が本格化している。図４は、従来の
突起電極付ＩＣチップの実装方法を示す。図４（ａ）に
示す基板は、突起電極付ＩＣチップを接続する基板を示
す。基板９の上面には、ＩＣチップと接続するボンディ
ングパット８が形成されており、ソルダーレジスト１０
でカバーされている。基板９の上下面は、パターン１１
が形成されており、ソルダーレジスト１０でカバーして
いる。図４（ｂ）に示す封止フィルム貼り付け工程は、
封止樹脂５上にカバーフィルム６の付いた封止フィルム
１３を後工程の位置合わせ精度等を考慮し、ＩＣチップ
よりも１ミリ程度の大きいサイズに切断し、実装される
基板９の上に貼り付ける。図４（ｃ）に示す封止フィル
ム熱圧着工程は、封止フィルム１３を基板９に熱圧着
し、封止フィルム１３と基板９間の空隙を排除する。図
４（ｄ）に示すカバーフィルム剥離工程は、次工程でＩ
Ｃチップをボンディングするため、封止フィルム１３上
のカバーフィルム６を剥離する。図４（ｅ）に示す実装
工程は、ＰＶ膜４で周りを保護されたパット３上に突起
電極２が形成されたＩＣチップ１を基板９に位置合わせ
し、熱プレスすることで、突起電極２とボンディングパ
ット８を電気的に接合し、熱プレスを維持することで、
封止樹脂を硬化させ、硬化済封止樹脂７を形成する。例
えば、封止樹脂に、ナガセケムテックス社製速硬化性Ｎ
ＣＦフィルムＴ６９３／Ｒ６００３を使うと、ボンディ
ン条件を１８０℃１０秒＋２４０℃１０秒で、ボンディ
ングと同時に封止樹脂を硬化させることができる。ボン
ディングと同時に封止樹脂の硬化を行うため、硬化時間
を含めたサイクルタイムが長くなる問題があった。ま
た、硬化済封止樹脂７は、ＩＣチップ１の外周部にフィ
レット１２を形成するが、封止フィルム１３をＩＣチッ
プ１に対し、均等に張り合わせることが難しいため、フ
ィレット１２は、ＩＣチップ１の外周部に均等に形成す
ることが、難しかった。そのため、信頼性が低下する問
題等があった。図４（ｆ）に示す完成は、前述の図４
（ａ）から図４（ｅ）により、実装完成品２００が完成
する。2. Description of the Related Art In recent years, flip chip mounting has been developed in which a semiconductor chip is directly mounted on a substrate by a face-down method in order to miniaturize the semiconductor package and mount the semiconductor chip on a mother board with high density. Above all,
The market demand for inexpensive manufacturing of flip chip mounting using gold stud bumps is in full swing. FIG. 4 shows a conventional mounting method of an IC chip with protruding electrodes. The substrate shown in FIG. 4A shows a substrate to which the IC chip with protruding electrodes is connected. A bonding pad 8 for connecting to an IC chip is formed on the upper surface of the substrate 9, and the solder resist 10
Is covered by. The pattern 9 is formed on the upper and lower surfaces of the substrate 9.
Are formed and are covered with the solder resist 10. The step of attaching the sealing film shown in FIG.
The sealing film 13 with the cover film 6 on the sealing resin 5 is cut into a size of about 1 mm larger than the IC chip in consideration of alignment accuracy in a later process and the like, and is cut on the substrate 9 to be mounted. paste. In the sealing film thermocompression bonding step shown in FIG. 4C, the sealing film 13 is thermocompression bonded to the substrate 9 to eliminate voids between the sealing film 13 and the substrate 9. The cover film peeling process shown in FIG.
In order to bond the C chip, the cover film 6 on the sealing film 13 is peeled off. In the mounting process shown in FIG. 4E, the IC chip 1 having the protruding electrode 2 formed on the pad 3 whose periphery is protected by the PV film 4 is aligned with the substrate 9 and hot pressed to form the protruding electrode. By electrically connecting 2 and the bonding pad 8 and maintaining the hot press,
The sealing resin is cured to form the cured sealing resin 7. For example, the encapsulating resin may be a fast-curing N made by Nagase Chemtex.
When the CF film T693 / R6003 is used, it is possible to cure the sealing resin at the same time as bonding under bonding conditions of 180 ° C. for 10 seconds and 240 ° C. for 10 seconds. Since the sealing resin is cured at the same time as the bonding, there is a problem that the cycle time including the curing time becomes long. Further, the cured encapsulation resin 7 forms the fillet 12 on the outer peripheral portion of the IC chip 1, but it is difficult to evenly attach the encapsulation film 13 to the IC chip 1. It was difficult to uniformly form the outer peripheral portion of No. 1. Therefore, there is a problem that reliability is lowered. The completion shown in FIG.
4A to 4E, the mounting completed product 200 is completed.
【発明が解決しようとする課題】しかしながら、前述し
た突起電極付ＩＣチップの実装方法には次のような問題
点がある。即ち、封止フィルムを基板に貼り付けるた
め、封止フィルムをＩＣチップよりも大きく切断する必
要があるため、コストが高くなる等の問題があった。ま
た、突起電極のボンディングと封止樹脂の硬化を同一プ
ロセスで行うため、サイクルタイムが長くなる等の問題
があった。さらに、封止樹脂フィルムを基板に貼り付け
た後ＩＣチップを貼り付けるため、ボンディング時に位
置ずれが発生し、均等なフィレットが形成できず、信頼
性が低下する等の問題があった。本発明は、上記従来の
課題に鑑みなされたものであり、その目的は、突起電極
付ＩＣチップの実装時、安価で信頼性のある実装方法を
提供するものである。However, the above-mentioned mounting method of the IC chip with protruding electrodes has the following problems. That is, since the sealing film is attached to the substrate, it is necessary to cut the sealing film larger than the IC chip, which causes a problem such as an increase in cost. Further, since the bonding of the protruding electrodes and the curing of the sealing resin are performed in the same process, there is a problem that the cycle time becomes long. Furthermore, since the IC chip is attached after the encapsulating resin film is attached to the substrate, there is a problem in that misalignment occurs during bonding, uniform fillets cannot be formed, and reliability decreases. The present invention has been made in view of the above conventional problems, and an object thereof is to provide an inexpensive and reliable mounting method when mounting an IC chip with protruding electrodes.
【課題を解決するための手段】上記目的を達成するため
に、パット上に突起電極を有するＩＣチップを回路基板
に接続する実装方法において、少なくとも前記ＩＣチッ
プの実装面に封止樹脂を接着する接着工程と、封止樹脂
付ＩＣチップと前記回路基板とを接合する実装工程とを
包含することを特徴とするものである。また、前記封止
樹脂は、少なくとも熱硬化性樹脂と熱可塑性樹脂とを包
含することを特徴とするものである。また、前記接着工
程の熱硬化性樹脂は、Ａステージ樹脂であることを特徴
とするものである。また、前記実装工程は、前記封止樹
脂付ＩＣチップと前記回路基板とを電気的に接合するボ
ンディング工程と、前記封止樹脂を硬化する硬化工程と
からなることを特徴とするものである。また、前記ボン
ディング工程は、前記封止樹脂付ＩＣチップの突起電極
と前記回路基板とを位置合わせする位置決め工程と、前
記突起電極と前記回路基板とを電気的に接合する接合工
程とからなることを特徴とするものである。また、前記
位置決め工程の際の温度は、前記熱可塑性樹脂の軟化温
度よりも高く、前記熱硬化性樹脂の反応開始温度よりも
低いことを特徴とするものである。また、前記接合工程
は、熱プレス法を用いることを特徴とするものである。
また、前記接着工程は、前記封止樹脂を前記ＩＣチップ
の実装面の面積とほぼ同じ大きさで、前記ＩＣチップの
実装面に接着させる工程を包含することを特徴とするも
のである。また、前記突起電極は、金を主成分としてい
ることを特徴とするものである。また、前記突起電極
は、ワイヤーボンディング法により形成されていること
を特徴とするものである。また、前記回路基板上のボン
ディングパットは、予めハンダ処理がなされていること
を特徴とするものである。In order to achieve the above object, in a mounting method for connecting an IC chip having protruding electrodes on a pad to a circuit board, a sealing resin is adhered to at least the mounting surface of the IC chip. It is characterized by including an adhering step and a mounting step of joining the IC chip with a sealing resin and the circuit board. Further, the sealing resin includes at least a thermosetting resin and a thermoplastic resin. Further, the thermosetting resin in the adhering step is an A stage resin. Further, the mounting step is characterized by including a bonding step of electrically bonding the IC chip with sealing resin and the circuit board, and a curing step of curing the sealing resin. Further, the bonding step includes a positioning step of aligning the protruding electrode of the IC chip with the sealing resin and the circuit board, and a bonding step of electrically bonding the protruding electrode and the circuit board. It is characterized by. The temperature in the positioning step is higher than the softening temperature of the thermoplastic resin and lower than the reaction start temperature of the thermosetting resin. Further, the joining step is characterized by using a hot pressing method.
Further, the bonding step includes a step of bonding the sealing resin to the mounting surface of the IC chip in a size substantially the same as the area of the mounting surface of the IC chip. Further, the protruding electrode is characterized by containing gold as a main component. Further, the protruding electrode is formed by a wire bonding method. Further, the bonding pad on the circuit board is characterized in that a soldering process is performed in advance.
【発明の実施の形態】以下図面に基づいて本発明におけ
る突起電極付ＩＣチップの実装方法について説明する。
図１は本発明の実施の形態で突起電極付ＩＣチップの実
装方法を説明する説明図である。図２は本発明の実施の
形態で実装工程を説明する説明図である。図３は本発明
の実施の形態でボンディング工程を説明する説明図であ
る。従来技術と同一部材は同一符号で示す。先ず、図１
（ａ）の突起電極付ＩＣチップは、ＰＶ膜４で保護され
たＩＣチップ１のパット３上に突起電極２が形成された
突起電極付ＩＣチップである。突起電極２は、ワイヤー
ボンディング法、電解メッキ法等で作成することができ
るが、基板接合時に熱プレス法で電気接続するため、ワ
イヤーボンディング法で形成した突起電極が望ましい。
また、その材料は酸化しにくい金を主成分としたものが
望ましい。図１（ｂ）に示す接着工程は、封止樹脂５を
ほぼＩＣチップ１の大きさに接着する。そのため、封止
樹脂５を必要な部分のみに形成することができる。図１
（ｃ）に示す実装工程は、基板９上のボンディングパッ
ト８とＩＣチップ１の突起電極２を位置合わせし、熱プ
レス法で電気的に接続し、封止樹脂５を硬化させ、硬化
済封止樹脂７を形成する。封止樹脂５はほぼＩＣチップ
１のサイズであるため、ＩＣチップ１の外周面に均一な
フィレット１２が形成できる。ボンディングパット８
は、周りをソルダーレジスト１０で保護されており、基
板９の上下面はパターン１１が形成されており、ソルダ
ーレジスト１０がカバーしている。ボンディングパット
８の表面処理が金である場合、熱プレス法により熱硬化
性樹脂の硬化収縮と圧力により電気的に接続される。一
方、表面処理がハンダである場合、信頼性のある金とハ
ンダの金属間接合により接続される。図１（ｄ）に示す
完成は、前述の図１（ａ）から図１（ｃ）により、実装
完成品１００が完成する。図２に本発明の図１（ｃ）に
示した実装工程を説明する。図２（ａ）の封止樹脂付Ｉ
Ｃチップは、前述の図１（ｂ）と同じであるため、説明
は省略する。図２（ｂ）に示すボンディング工程は、周
りをソルダーレジスト１０で保護された基板９上のボン
ディングパット８とＩＣチップ１の突起電極を位置合わ
せし、熱プレス法で電気的に基板８とＩＣチップ１を接
続する。図２（ｃ）に示す硬化工程は、前述のボンディ
ング工程では、未硬化である封止樹脂５をバッチ式キュ
ア炉に入れて硬化済封止樹脂７を形成する。予め封止樹
脂５は、ＩＣチップ１とほぼ同じサイズに接着してある
ため、ＩＣチップ１の外周部にフィレット１２が、均等
に形成され信頼性が向上した。図３に本発明の図２
（ｂ）に示したボンディング工程を説明する。図３
（ａ）の封止樹脂付ＩＣチップは、前述の図１（ｂ）と
同じであるため、説明は省略する。図３（ｂ）の位置決
め工程は、基板９上のボンディングパット８とＩＣチッ
プ１の突起電極を位置合わせし仮接着する。例えば、熱
可塑性樹脂に軟化温度が約８０℃のアクリル系樹脂を使
い、反応開始温度を約１２０℃に調整すると、１００℃
で仮接着すると、粘度は充分下がっているため、ボイド
の発生を押さえながら、チップ１と基板９を仮接着でき
た。図３（ｃ）に示す接合工程は、ＩＣチップ１の突起
電極２と基板９のボンディングパット８を熱プレス法に
より電気的に接続する。次に、バッチ方式で封止樹脂を
硬化する。例えば、前記アクリル系樹脂で調整した封止
樹脂を使うと、２４０℃１０秒で電気的接合が完了す
る。さらに、２００℃１０分で封止樹脂が熱硬化でき
た。これらのサイクルタイムを従来の方法と比べると、
５０ｘ１００ミリの基板にＩＣチップが２０個乗り、こ
の基板をボンディング後２０枚一括で封止樹脂をキュア
すると、従来の方法では、２０ＩＣチップを２０基板分
実装完了するのに、８，０００秒（＝２０ＩＣチップｘ
２０基板ｘ２０秒）である。一方、本発明の場合、３，
６００秒（＝２０ＩＣチップｘ２０基板ｘ１０秒＋１０
分）となり、大幅にサイクルタイムを減少することがで
きる。BEST MODE FOR CARRYING OUT THE INVENTION A method of mounting an IC chip with protruding electrodes according to the present invention will be described below with reference to the drawings.
FIG. 1 is an explanatory diagram for explaining a mounting method of an IC chip with a protruding electrode according to an embodiment of the present invention. FIG. 2 is an explanatory diagram illustrating a mounting process in the embodiment of the present invention. FIG. 3 is an explanatory diagram for explaining the bonding process in the embodiment of the present invention. The same members as those in the prior art are designated by the same reference numerals. First, Fig. 1
The IC chip with a protruding electrode of (a) is an IC chip with a protruding electrode in which the protruding electrode 2 is formed on the pad 3 of the IC chip 1 protected by the PV film 4. The bump electrode 2 can be formed by a wire bonding method, an electrolytic plating method, or the like, but a bump electrode formed by the wire bonding method is desirable because it is electrically connected by a hot pressing method when joining the substrates.
Further, it is desirable that the material is composed mainly of gold, which is difficult to oxidize. In the bonding step shown in FIG. 1B, the sealing resin 5 is bonded to approximately the size of the IC chip 1. Therefore, the sealing resin 5 can be formed only in a necessary portion. Figure 1
In the mounting step shown in (c), the bonding pad 8 on the substrate 9 and the protruding electrode 2 of the IC chip 1 are aligned and electrically connected by a hot press method, the sealing resin 5 is cured, and the cured sealing is performed. The stop resin 7 is formed. Since the encapsulating resin 5 has almost the size of the IC chip 1, the uniform fillet 12 can be formed on the outer peripheral surface of the IC chip 1. Bonding pad 8
Is protected by a solder resist 10, and a pattern 11 is formed on the upper and lower surfaces of the substrate 9 to cover the solder resist 10. When the surface treatment of the bonding pad 8 is gold, the thermosetting resin is electrically connected by the curing shrinkage and pressure of the thermosetting resin by the hot pressing method. On the other hand, when the surface treatment is solder, the connection is made by a reliable metal-metal joint between gold and solder. The completion shown in FIG. 1 (d) is completed by the above-described FIGS. 1 (a) to 1 (c). FIG. 2 illustrates the mounting process shown in FIG. 1C of the present invention. With sealing resin I of FIG. 2 (a)
The C chip is the same as that in FIG. In the bonding step shown in FIG. 2B, the bonding pad 8 on the substrate 9 whose periphery is protected by the solder resist 10 and the protruding electrode of the IC chip 1 are aligned with each other, and the substrate 8 and the IC are electrically connected by a hot press method. Connect chip 1. In the curing step shown in FIG. 2C, in the bonding step described above, the uncured sealing resin 5 is put into a batch type curing furnace to form the cured sealing resin 7. Since the sealing resin 5 is bonded to the IC chip 1 in substantially the same size in advance, the fillets 12 are evenly formed on the outer peripheral portion of the IC chip 1 and reliability is improved. 2 of the present invention in FIG.
The bonding process shown in (b) will be described. Figure 3
Since the IC chip with a sealing resin of (a) is the same as that of FIG. 1 (b) described above, the description thereof will be omitted. In the positioning step of FIG. 3B, the bonding pad 8 on the substrate 9 and the protruding electrode of the IC chip 1 are aligned and temporarily bonded. For example, if an acrylic resin with a softening temperature of about 80 ° C. is used as the thermoplastic resin and the reaction start temperature is adjusted to about 120 ° C., 100 ° C.
Since the viscosity was sufficiently reduced by temporarily bonding with, the chip 1 and the substrate 9 could be temporarily bonded while suppressing the generation of voids. In the bonding step shown in FIG. 3C, the protruding electrode 2 of the IC chip 1 and the bonding pad 8 of the substrate 9 are electrically connected by the hot pressing method. Next, the sealing resin is cured by a batch method. For example, when the sealing resin prepared with the acrylic resin is used, electrical joining is completed at 240 ° C. for 10 seconds. Furthermore, the sealing resin was able to be thermoset at 200 ° C. for 10 minutes. Comparing these cycle times with conventional methods,
If 20 IC chips are mounted on a 50 × 100 mm substrate and the sealing resin is cured in a batch after bonding the 20 IC chips, in the conventional method, 8,000 seconds ( = 20 IC chips x
20 substrates x 20 seconds). On the other hand, in the case of the present invention, 3,
600 seconds (= 20 IC chips x 20 substrates x 10 seconds + 10
Minutes), and the cycle time can be greatly reduced.
【発明の効果】以上説明したように、本発明の突起電極
付ＩＣチップの実装方法によれば、ＩＣチップに封止樹
脂を接着し実装するため、封止樹脂の無駄を無くし、安
価な実装方法を提供できる。また、封止樹脂が、少なく
とも熱硬化性樹脂と熱可塑性樹脂とを含有することで、
仮接着を容易に実現できる。また、熱硬化性樹脂がＡス
テージ樹脂であることで、ボンディング時容易に、ボイ
ドの形成を防ぐことができる。また、ボンディング工程
と封止樹脂の硬化工程とを分離した工程にすることで、
サイクルタイムの短くした安価な実装方法を提供でき
る。また、ＩＣチップを仮接着する工程と電気的接合す
る工程とを分離することで、工程のフレキシビリティを
向上させることができる。また、位置決め工程の際の温
度を、熱可塑性樹脂の軟化温度よりも高く、熱硬化性樹
脂の反応開始温度よりも低くすることで、ボイドがない
信頼性のある実装方法を提供できる。また、接合工程に
熱プレス法を採用することで、容易に突起電極を接合す
ることができる。また、封止樹脂の実装面とＩＣチップ
の実装面とをほぼ同じ面積とすることで、均一なフィレ
ットを形成でき、信頼性の高い構造を提供できる。ま
た、突起電極が金を主成分とすることで、途中工程での
突起電極の酸化を防ぎ、容易にボンディングができる。
また、突起電極をワイヤーボンディング方式で形成する
ことで、容易に熱プレス法でボンディングすることがで
きる。また、基板上のボンディングは、予めハンダ処理
がなされていることで、金属間接合をした信頼性のある
接続方法を提供できる。As described above, according to the mounting method of the IC chip with the protruding electrodes of the present invention, the sealing resin is bonded and mounted on the IC chip, so that the sealing resin is not wasted and the mounting is inexpensive. A method can be provided. Further, the sealing resin contains at least a thermosetting resin and a thermoplastic resin,
Temporary adhesion can be easily realized. Further, since the thermosetting resin is the A-stage resin, it is possible to easily prevent the formation of voids during bonding. In addition, by separating the bonding process and the sealing resin curing process,
An inexpensive mounting method with a short cycle time can be provided. Further, by separating the step of temporarily adhering the IC chip and the step of electrically connecting the IC chips, the flexibility of the steps can be improved. Further, by setting the temperature in the positioning step to be higher than the softening temperature of the thermoplastic resin and lower than the reaction start temperature of the thermosetting resin, it is possible to provide a reliable mounting method without voids. Further, by adopting the hot pressing method in the joining process, the protruding electrodes can be easily joined. Further, by making the mounting surface of the sealing resin and the mounting surface of the IC chip have substantially the same area, it is possible to form a uniform fillet and provide a highly reliable structure. In addition, since the protruding electrode contains gold as a main component, it is possible to prevent the protruding electrode from being oxidized in an intermediate step and easily perform bonding.
Further, by forming the protruding electrodes by the wire bonding method, the bonding can be easily performed by the hot pressing method. In addition, since the bonding on the substrate is performed by soldering in advance, it is possible to provide a reliable connection method in which metal-to-metal bonding is performed.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の実施の形態に係わる突起電極付ＩＣチ
ップの実装工程で、突起電極付ＩＣチップ、接着工程、
実装工程、完成を示す説明図である。FIG. 1 is a view showing a mounting process of an IC chip with protruding electrodes according to an embodiment of the present invention, an IC chip with protruding electrodes, an adhering process,
It is explanatory drawing which shows a mounting process and completion.
【図２】本発明の実施の形態に係わる実装工程で、封止
樹脂付ＩＣチップ、ボンディング工程、硬化工程を示す
説明図である。FIG. 2 is an explanatory diagram showing an IC chip with a sealing resin, a bonding process, and a curing process in the mounting process according to the embodiment of the present invention.
【図３】本発明の実施の形態に係わるボンディング工程
で、封止樹脂付ＩＣチップ、位置決め工程、接合工程を
示す説明図である。FIG. 3 is an explanatory diagram showing an IC chip with a sealing resin, a positioning process, and a bonding process in the bonding process according to the embodiment of the present invention.
【図４】従来の突起電極付ＩＣチップの実装工程で、基
板、封止フィルム貼り付け工程、封止フィルム熱圧着工
程、カバーフィルム剥離工程、実装工程、完成を示す説
明図である。FIG. 4 is an explanatory diagram showing a substrate, a sealing film attaching process, a sealing film thermocompression bonding process, a cover film peeling process, a mounting process, and a completion in a conventional mounting process of an IC chip with protruding electrodes.
１ ＩＣチップ ２ 突起電極 ３ パット ４ ＰＶ膜 ５ 封止樹脂 ６ カバーフィルム ７ 硬化済封止樹脂 ８ ボンディングパット ９ 基板 １０ ソルダーレジスト １１ パターン １２ フィレット １３ 封止フィルム １００ 実装完成品 ２００ 実装完成品 1 IC chip 2 protruding electrodes 3 putts 4 PV film 5 Sealing resin 6 cover film 7 Cured sealing resin 8 bonding pads 9 substrates 10 Solder resist 11 patterns 12 fillets 13 Sealing film 100 finished products 200 finished product
Claims (11)
を回路基板上に接続する実装方法であって、少なくとも
前記ＩＣチップの実装面に封止樹脂を接着する接着工程
と、封止樹脂付ＩＣチップと前記回路基板とを接合する
実装工程とを包含することを特徴とする突起電極付ＩＣ
チップの実装方法。1. A mounting method for connecting an IC chip having a protruding electrode on a pad to a circuit board, the bonding step including bonding a sealing resin to at least a mounting surface of the IC chip, and an IC with a sealing resin. An IC with a bump electrode including a mounting step of joining a chip and the circuit board
Chip mounting method.
脂と熱可塑性樹脂とを包含することを特徴とする請求項
１記載の突起電極付ＩＣチップの実装方法。2. The method of mounting an IC chip with protruding electrodes according to claim 1, wherein the sealing resin includes at least a thermosetting resin and a thermoplastic resin.
ージ樹脂であることを特徴とする請求項２記載の突起電
極付ＩＣチップの実装方法。3. The mounting method of an IC chip with a protruding electrode according to claim 2, wherein the thermosetting resin in the bonding step is an A stage resin.
ップと前記回路基板とを電気的に接合するボンディング
工程と、前記封止樹脂を硬化する硬化工程とからなるこ
とを特徴とする請求項１から３記載の突起電極付ＩＣチ
ップの実装方法。4. The mounting step comprises a bonding step of electrically joining the IC chip with sealing resin and the circuit board, and a curing step of curing the sealing resin. Item 4. A method for mounting an IC chip with a protruding electrode according to items 1 to 3.
付ＩＣチップの突起電極と前記回路基板とを位置合わせ
する位置決め工程と、前記突起電極と前記回路基板とを
電気的に接合する接合工程とからなることを特徴とする
請求項４記載の突起電極付ＩＣチップの実装方法。5. The bonding step includes a positioning step of aligning a protruding electrode of the IC chip with a sealing resin and the circuit board, and a bonding step of electrically bonding the protruding electrode and the circuit board. 5. The method for mounting an IC chip with protruding electrodes according to claim 4, comprising:
可塑性樹脂の軟化温度よりも高く、前記熱硬化性樹脂の
反応開始温度よりも低いことを特徴とする請求項５記載
の突起電極付ＩＣチップの実装方法。6. The protrusion electrode according to claim 5, wherein the temperature in the positioning step is higher than the softening temperature of the thermoplastic resin and lower than the reaction start temperature of the thermosetting resin. IC chip mounting method.
とを特徴とする請求項５記載の突起電極付ＩＣチップの
実装方法。7. The method of mounting an IC chip with protruding electrodes according to claim 5, wherein the joining step uses a hot pressing method.
Ｃチップの実装面の面積とほぼ同じ大きさで、前記ＩＣ
チップの実装面に接着させる工程を包含することを特徴
とする請求項１から７記載の突起電極付ＩＣチップの実
装方法。8. The step of attaching the sealing resin to the I
The size of the IC is about the same as the area of the mounting surface of the C chip.
8. The method of mounting an IC chip with a protruding electrode according to claim 1, further comprising the step of adhering to the mounting surface of the chip.
ことを特徴とする請求項１から８記載の突起電極付ＩＣ
チップの実装方法。9. The IC with a bump electrode according to claim 1, wherein the bump electrode has gold as a main component.
Chip mounting method.
グ法により形成されていることを特徴とする請求項９記
載の突起電極付ＩＣチップの実装方法。10. The method of mounting an IC chip with a protruding electrode according to claim 9, wherein the protruding electrode is formed by a wire bonding method.
は、予めハンダ処理がなされていることを特徴とする請
求項１から１０記載の突起電極付ＩＣチップの実装方
法。11. The mounting method of an IC chip with a bump electrode according to claim 1, wherein the bonding pad on the circuit board is soldered in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001281309A JP2003092311A (en) | 2001-09-17 | 2001-09-17 | Method of mounting ic chip having projecting electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001281309A JP2003092311A (en) | 2001-09-17 | 2001-09-17 | Method of mounting ic chip having projecting electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003092311A true JP2003092311A (en) | 2003-03-28 |
Family
ID=19105155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001281309A Pending JP2003092311A (en) | 2001-09-17 | 2001-09-17 | Method of mounting ic chip having projecting electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003092311A (en) |
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| US10354985B2 (en) | 2016-06-15 | 2019-07-16 | Samsung Electronics Co., Ltd. | Semiconductor device having stacked semiconductor chips and method for fabricating the same |
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