JPH1197578A - Semiconductor device and manufacture therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain good reliability in connection by providing a semiconductor package structure with a buffer for absorbing a difference in a thermal expansion coefficient between a package board and a semiconductor element. SOLUTION: In a semiconductor device which has a tape material having a wiring layer and a semiconductor element electrically connected to the tape material, has on a wiring tape 3.1 an external terminal electrically connected to a package board, and uses a film material 3.2 as material for isolatedly bonding the wiring tape 3.1 to the semiconductor element 3.3, the film for bonding comprises a thermosetting resin constituent and a low elastic-modulus resin constituent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-density, multi-pin, high-speed transmission-compatible semiconductor device excellent in electrical characteristics, mounting reliability, and assemblability, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, there has been a strong demand for higher integration and higher density of semiconductor devices along with higher performance of electric and electronic components. Therefore, semiconductor elements are LSI, VLSI, ULSI
Higher integration, higher functionality, larger elements, more pins,
Higher speed and higher power consumption have been advanced. In response, the package structure of a multi-pin semiconductor device has changed from a structure having connection terminals on two sides of an element to a structure having terminals on all four sides. Further, a grid array structure in which connection terminals are arranged on a grid on the entire mounting surface using a multilayer carrier substrate has been put to practical use to cope with the increase in the number of pins. In this grid array structure, a ball grid array structure (BGA) in which connection terminal lengths are shortened to enable high-speed signal transmission is applied. The ball-type structure as the connection terminal also has a large conductor width, and is thus effective in reducing inductance. Further, recently, organic materials having a relatively low dielectric constant have been studied for a multilayer carrier substrate to cope with a higher speed.

However, since organic materials generally have a higher coefficient of thermal expansion than semiconductor elements, there is a problem in connection reliability and the like due to thermal stress generated by a difference in the coefficient of thermal expansion. Recently, in such a BGA package, a structure not using a carrier substrate has been proposed. That is, a new semiconductor element package structure has been proposed in which connection reliability is improved by relaxing thermal stress generated due to a difference in thermal expansion coefficient between a semiconductor element and a mounting substrate with an elastomer material having a low elastic modulus (US Pat. No. 5,148,265). This package structure uses a wiring tape made of polyimide or the like instead of the carrier substrate for electrical connection between the semiconductor element and the mounting substrate. Therefore, as an electrical connection portion, the semiconductor element and the wiring tape are connected by wire bonding or bonding by a lead, and the wiring tape and the mounting board are electrically connected by solder ball terminals.

As the elastomer used in this conventional technique, a silicone-based material is generally used from the viewpoint of a low elastic modulus material having excellent heat resistance. As a general method for forming a stress buffer layer using a silicone-based material, a step of printing an uncured liquid resin on a wiring tape using a mask or the like and thereafter obtaining a cured product is used. This method has problems that it is difficult to secure the flatness of the buffer layer obtained by printing, and that the printing process is complicated and time-consuming.
Therefore, it is disadvantageous to the mass production process, and at the same time, since the flatness of the buffer layer cannot be secured, there is a problem in assembly yield and mounting reliability.

[0005]

SUMMARY OF THE INVENTION An object of the present invention is to disclose a technique for obtaining a stress buffer layer having excellent flatness in a semiconductor device by using a film material as an elastomer material for reducing thermal stress. Another object is to provide a semiconductor device which is excellent in mass productivity.

[0006]

In order to achieve the above object, the present invention provides the following means. The means is that the tape material having the wiring layer and the semiconductor element are electrically connected,
In a semiconductor device that has external terminals on the wiring tape for electrical connection to the mounting substrate and uses a film material for the material that insulates the wiring tape from the semiconductor element, the adhesive film material is cured by heat. This is achieved by providing a semiconductor device comprising a conductive resin component and a low elastic modulus resin component. The film material is subjected to a process of forming external terminals using solder balls or the like for connecting to a mounting substrate in a semiconductor device manufacturing process, or a solder reflow process for mounting the semiconductor element of the present invention on a mounting substrate.

[0007] The reflow temperature is generally 200-250.
Since the semiconductor device is processed at a high temperature of ° C., the semiconductor device that has absorbed moisture evaporates and the film material swells due to its vapor pressure. When the film material exceeds a certain threshold, a foaming phenomenon occurs, and defects such as voids and peeling occur. Therefore, the film material used is required to have as low a moisture absorption rate as possible. In the present invention, as a result of examining various film materials, it has been found that a material composed of a thermosetting resin component and a low elastic modulus resin component has excellent reflow characteristics as compared with a thermoplastic material.

Further, since the film material functions as a stress buffer layer, it is desirable that the film material is formed of a low elastic modulus resin having an elastic modulus at room temperature of 4000 MPa or less. Therefore, it becomes possible to achieve desired properties by including a low elastic modulus resin component. The characteristics of the film material are 85 ° C./85% RH, 16 from the viewpoint of reflow characteristics.
It is desirable that the moisture absorption rate in 8 hours is 3% or less.

Further, the film material may have a three-layer structure having an adhesive layer on both sides of a support, for example, as well as a uniform structure consisting of only an adhesive component. In this case, a polyimide material is often used as the central support. In some cases, a porous support is impregnated with an adhesive. Examples of the film shape include a shape obtained by various punching and a mesh shape.
The mesh shape can reduce the attachment area, and is more effective in improving the reflow resistance during moisture absorption.

In the case of a multilayer structure represented by a three-layer structure, the adhesive layers are on both sides of the support, but may be made of different materials. For example, in order to fill the unevenness of the wiring layer on the wiring tape side, a material having high fluidity is used, and a combination of materials that can be bonded in a short time at a high temperature can be considered in a portion where a flat semiconductor element is bonded on the opposite side. . The thickness of the adhesive layers on both sides may be the same or different. For example, there may be a case where a portion for filling the unevenness of the wiring layer on the wiring tape side is thick and a portion for bonding a flat semiconductor element on the opposite side is thin, but a sufficient adhesive force can be secured.

FIG. 1 shows a manufacturing process of a general semiconductor device according to the present invention. Typical manufacturing processes are classified into the following three types. One is (FIG. 1-a) (1) a step of bonding an adhesive film to a tape having a wiring layer, (2) a step of insulatingly bonding the semiconductor element to the tape having a wiring layer via the bonding film, (3) a step of electrically connecting a wiring layer formed on the tape to a pad on the semiconductor element; (4) a step of sealing the electrically connected portion with an insulator; and (5) a tape. Forming an external terminal for connecting to a mounting substrate on the semiconductor device. This method is an effective manufacturing method that can handle a wiring tape and a film material in a long reel process as described later, and improves mass productivity.

As a second manufacturing method (FIG. 1B)
(1) forming an adhesive film on the semiconductor element;
(2) a step of insulatingly attaching a tape having a wiring layer to a semiconductor element via an adhesive film; and (3) electrically connecting a wiring layer formed on the tape to a pad on the semiconductor element. There is a method for manufacturing a semiconductor element, comprising: a step; (4) a step of sealing the electrically connected portion with an insulator; and (5) a step of forming external terminals for connection to a mounting substrate on a tape. . This method can also form a stress buffer layer on a semiconductor element at the wafer stage, and is an effective manufacturing method for improving the yield of the semiconductor element itself.

As a third method (FIG. 3C) (1)
A step of aligning a tape having a wiring layer and a semiconductor element via an adhesive film and bonding them together in an insulating manner; (2) electrically connecting a wiring layer formed on the tape and a pad on the semiconductor element; (3) a step of sealing the electrically connected portion with an insulator;
(4) a step of forming external terminals for connecting to a mounting substrate on a tape;
This can reduce the number of manufacturing steps and is effective in reducing the manufacturing time.

These manufacturing methods are basically formed by the following steps. That is, the adhesive film material of the present invention is placed between the tape material on which the wiring layer is formed and the semiconductor element by any method, and the two are adhered collectively or sequentially under the conditions of a predetermined temperature, a predetermined pressure and a predetermined time. Thereafter, the wiring layer on the tape and the connection pads of the semiconductor element are electrically connected. As a connection method, a method of connecting to a semiconductor element using a connection lead formed in advance on a wiring tape by a circuit, in this case, a single point bonding, a collective gang bonding method, or the like is used.
As another connection technique, a method of connecting the both by wire bonding or the like is used. Next, the connection portion is sealed with an insulating material, and finally, external terminals as electrical connection terminals with the mounting substrate are formed on the wiring tape. Generally, when a solder ball is used as the external terminal, a ball forming method by plating is often used. In the case of plating, examples of metals include gold, nickel, copper, and solder.

In order to increase the mass productivity in the manufacturing process, it is important to integrate the adhesive film material with the wiring tape in advance as shown in FIG. 1A, for example. As a general manufacturing method in this case, a method in which the tape on which the wiring layer is formed is transported in a long reel process and the adhesive film is attached while being punched into a predetermined size is effective for mass productivity. In this case, the adhesive layer adheres to the wiring tape in an uncured A stage or a semi-cured B stage. In the step of bonding to the semiconductor element using the obtained wiring tape with an adhesive film, the resin further hardens and finally reaches the C stage. If the adhesive film is integrated with the wiring tape in advance, the alignment when bonding the semiconductor elements becomes easy. Therefore, the jig of the bonding apparatus is also very simple, which is advantageous for the mass production process. Also, in the semiconductor device of the present invention, the unevenness of the wiring circuit on the wiring tape may be buried with the adhesive layer of the film, and in this case, whether the embeddability is good at the time of bonding with the wiring tape is confirmed in the process of integration with the wiring tape. It is possible to remove defects before connecting the semiconductor element, and it is advantageous from the viewpoint of preventing waste of the semiconductor element and improving the yield.

Typical thermosetting resin components constituting the adhesive component of the film material include epoxy resin, polyimide resin, polyamide resin, cyanate resin, isocyanate resin, fluorine-containing resin, silicon-containing resin, urethane resin, and the like.
Examples include styrene resin, maleimide resin, phenol resin, unsaturated polyester resin, diallyl phthalate resin, cyanamide resin, polybutadiene resin, other various polymer blends, and polymer alloys.

Representative low elastic modulus resin components constituting the adhesive component of the film material include acrylic rubber, polybutadiene rubber, acrylonitrile butadiene rubber, fluorine rubber, silicone rubber and the like.

The elastic modulus of the adhesive film material is preferably high in a high temperature range from the viewpoint of reflow characteristics, but is preferably as low as possible in a room temperature range.
Since a semiconductor element and a mounting board generally have different coefficients of thermal expansion, thermal stress is generated in external terminals formed of solder balls or the like during mounting, and connection reliability becomes an important issue. If the elasticity of the adhesive film material existing between the semiconductor element and the mounting substrate is low, this portion becomes a stress buffer layer, which is advantageous from the viewpoint of connection reliability. 4000M as room temperature elastic modulus
Desirably, it is Pa or less. Furthermore, the elastic modulus over the entire temperature cycle test (-55 ° C to 150 ° C) is 2
It is desirable that the pressure be 000 MPa or less.

As a material having a relatively low elastic modulus in a low temperature range including room temperature while maintaining the elastic modulus at such a high temperature, a silicone material is often used. A film material made of a silicone-based material is one of extremely important materials in a semiconductor device having the same structure as the present invention. However, the film material of the present invention has the following advantages as compared with silicone-based materials. That is, since silicone has low cohesive energy, the cyclic low-molecular compound is gradually thermally decomposed due to the heat history of the manufacturing process, and its volatile components may be contaminated to cause a failure such as poor connection. Further, even in a long-term heat treatment such as high-temperature storage (for example, 150 ° C. or more), the same thermal decomposition product may cause contamination to the surroundings.

The structure of the film material of the present invention is not limited to a uniform structure consisting of only an adhesive component, but may be, for example, a three-layer structure having an adhesive layer on both sides of a support. There is also a case where an adhesive is impregnated with the adhesive. Examples of the support for the film material include a film or a porous material such as polyimide, epoxy, polyethylene terephthalate, cellulose, acetate, and fluorine-containing polymer. Examples of the film shape include a shape obtained by various punching and a mesh shape. The mesh shape can reduce the attachment area and is effective in improving the reflow resistance when moisture is absorbed. In the case of a three-layer structure, the thickness and type of the adhesive layers on both sides can be arbitrarily controlled, and the fluidity at the time of attachment can be easily controlled. Further, there is an advantage that the insulating layer can be reliably secured by the center support.

85 ° C./85% RH of adhesive film material
By using a material having a saturated moisture absorption of 3% or less, the value of vapor pressure due to moisture absorption during reflow can be suppressed, and good reflow characteristics can be obtained.

A tape having a wiring layer is generally composed of a flexible circuit board. That is, a polyimide material is used as the insulating layer, an epoxy material is used as the adhesive layer with the conductor,
Polyimide-based materials, phenol-based materials, polyamide-based materials, and the like are used. Copper is often used as the conductor layer. The wiring circuit may be coated on copper with nickel, gold plating, or the like. In some flexible circuit boards, a material in which copper is directly formed on a polyimide insulating layer that does not use an adhesive layer with a conductor may be used. The tape having a wiring layer may have a multilayer wiring structure. In this case, a power supply layer, a ground layer, and the like can be formed in the wiring tape in addition to the signal wiring layer, and a semiconductor device having excellent electric characteristics can be provided.

There are typically two types of arrangements of pad terminals on a semiconductor element for electrically connecting a tape material having a wiring layer to the semiconductor element. One is a peripheral pad arrangement structure as shown in FIG. In this case, there are three types of structures for arranging the external terminals of the semiconductor device as shown in FIG. That is, when the external terminal is below the semiconductor element (Fan In type, FIG. 3-1), when it is outside the semiconductor element (Fan Out type, FIG. 3-2), and when it is both (Fan In / Out type). , FIG. 3-3). Another example of the pad arrangement is a central arrangement structure shown in FIG. The semiconductor device in this case has the structure shown in FIG.

In the present invention, the semiconductor element is Si, Ga
Memory, logic,
I for gate array, custom, power transistor, etc.
This is an element that forms terminals such as C and LSI and has terminals that are connected to leads, bumps, and the like.

That is, the present invention relates to a semiconductor device in which a tape having a wiring layer is used as an intermediate material for electrical connection between a semiconductor element and a mounting substrate, and a thermosetting resin component as an insulating adhesive material between the wiring tape and the semiconductor element. By using a material composed of a low elastic modulus resin component, it has become possible to provide a semiconductor device having excellent reflow resistance characteristics and connection reliability. By using a film material, it is possible to provide a manufacturing method which is more excellent in mass productivity than a conventional printing method or the like.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on embodiments.

Example 1 An adhesive film (Hitachi Chemical, prototype, 150 μm thick) composed of an epoxy resin and an acrylic rubber (20% by weight of the whole) was positioned between a semiconductor element and a wiring tape. 120 ℃ 3
0 seconds, and bonded at a pressure 50 kgf / cm ^2, further 170 ° C.
Post-curing was performed in a thermostat for 60 minutes. Next, it was electrically connected to the pads of the semiconductor element by single point bonding using the connection leads on the wiring tape. The connection was sealed with an epoxy-based sealing material (Hitachi Chemical, RC021C). Finally, solder balls, which are connection terminals with the mounting substrate, were mounted on the wiring tape to obtain the semiconductor device shown in FIG.

The obtained semiconductor device was subjected to 85 ° C./85% RH
After absorbing moisture for 168 hours with a constant temperature and humidity layer, the adhesive layer was subjected to infrared reflow at a maximum temperature of 245 ° C.
It was confirmed that defects such as voids did not occur. Furthermore, the connection reliability of the leads and solder bumps of the obtained semiconductor device was confirmed. At this time, the mounting substrate was a glass cloth base epoxy resin copper-clad laminate FR-4 (Hitachi Chemical, MCL-E-
67) was used. The reliability test was performed using a temperature cycle (-55 ° C).
← → 150 ° C., 1000 times). (Example 2) Polyimide film (Ube Industries, SGA,
Adhesive layers composed of the same epoxy resin and acrylic rubber (25% by weight of the entire adhesive component) as in Example 1 were applied on both surfaces of a thickness of 25 μm) to a thickness of 20 μm to form a three-layer film material. The obtained film material was positioned and attached to a wiring tape. At this time, the bonding condition is 100 ° C. 5
Second, the pressure was 30 kgf / cm ² . Under these conditions, the unbonded adhesive layer has a sufficient adhesive ability to attach the semiconductor element. The bonding between the wiring tape to which the film material was attached and the semiconductor element was performed at 200 ° C. for 5 seconds and a pressure of 30 kgf / cm ² . Further, post-curing was performed in a thermostat at 150 ° C. for 120 minutes. Next, it was electrically connected to the pad of the semiconductor element by gang bonding using the connection lead on the wiring tape. Epoxy sealing material (Hitachi Chemical, RC
021C). Finally, solder balls, which are connection terminals with the mounting substrate, were mounted on the wiring tape to obtain the semiconductor device shown in FIG. 6-2.

The reflow characteristics and connection reliability of the leads and the solder bumps of the obtained semiconductor device were confirmed in the same manner as in Example 1.

Example 3 YX4000 as an epoxy resin
(Oiled shell) and E-180 (oiled shell) (equivalent ratio)
XER9 as a butadiene rubber
1 (Japan Synthetic Rubber) (30% by weight of the total), an adhesive film is positioned between the semiconductor element and the wiring tape, and placed at 120 ° C. for 10 seconds at a pressure of 100 kgf /.
The adhesive was adhered in cm ² and post-curing was further performed in a thermostat at 180 ° C. for 60 minutes. Next, the semiconductor device was electrically connected to the pads of the semiconductor element by wire bonding using the connection leads on the wiring tape. The connection portion was sealed with an epoxy-based sealing material (Hokuriku paint, chip coat 8107). Finally, solder balls, which are connection terminals with the mounting substrate, were mounted on the wiring tape to obtain the semiconductor device shown in FIG. 6-3.

The reflow characteristics and the connection reliability of the leads and the solder bumps of the obtained semiconductor device were confirmed in the same manner as in Example 1.

Example 4 YX4000 as an epoxy resin
(Oiled shell) and E-180 (oiled shell) (equivalent ratio)
PX-GE2 as an acrylic rubber composed of
The adhesive film was composed of (Nippon Shokubai) (50% by weight of the whole). Using this film material, the semiconductor device and the wiring tape are aligned and installed at 150 ° C.
Glue at pressure of 80 kgf / cm ² for 20 seconds and then 180
Post-curing was performed in a thermostat at 60 ° C. for 60 minutes. Next, it was electrically connected to the pads of the semiconductor element by single point bonding using the connection leads on the wiring tape. The connection portion was sealed with an epoxy-based sealing material (Hokuriku paint, chip coat 8107). Finally, solder balls, which are connection terminals with the mounting substrate, were mounted on the wiring tape to obtain the semiconductor device shown in FIG. Example 1 shows the reflow characteristics and connection reliability of the leads and the solder bumps of the obtained semiconductor device.
Confirmed in the same manner as

Example 5 Epoxy as thermosetting resin
EPICLONN-665 (Dainippon Ink & Chemicals) and XL-225-2L (Mitsui Toatsu Chemicals) (equivalent ratio), polytetrafluoroethylene rubber particles (Daikin Industries) % By weight), and polyimide (bisphenol A)
Bistrimellitate dianhydride and bis- (4- (2-aminophenoxyphenyl) ether) (20% by weight of the total) were added to form a film. The obtained film was positioned and attached to a wiring tape.
At this time, the bonding conditions were 120 ° C. for 2 seconds and a pressure of 150 kgf / cm ^2.
And At the time of sticking, the film was connected and stuck to the wiring tape while punching the film into a predetermined shape using the long device shown in FIG. Adhesion of the wiring tape with the film material to the semiconductor element is performed at 180 ° C. for 10 seconds under a pressure of 1
00 kgf / cm ² .

Next, the connection leads on the wiring tape were electrically connected to the pads of the semiconductor element by single point bonding. The connection portion was sealed with an epoxy-based sealing material (Hokuriku paint, chip coat 8107). Finally, solder balls, which are connection terminals with the mounting substrate, were mounted on the wiring tape to obtain the semiconductor device shown in FIG.

The reflow characteristics and the connection reliability of the leads and the solder bumps of the obtained semiconductor device were confirmed in the same manner as in Example 1.

Example 6 A thermosetting resin composed of liquid cyanate AroCyL-10 (Asahi Ciba) and manganese naphthenate (0.2 parts by weight based on cyanate) as a thermosetting resin was used as an adhesive film. A material composed of silicone rubber E601 (Toray Dow Corning) (30% by weight in total) was positioned and attached to the semiconductor element. At this time, the bonding conditions were 120 ° C. for 2 seconds and a pressure of 30 kgf / cm ² .
Bonding of the semiconductor element to which the wiring tape and the film material were adhered was performed at 200 ° C. for 10 seconds and at a pressure of 20 kgf / cm ² .

Next, the connection leads on the wiring tape were electrically connected to the pads of the semiconductor element by wire bonding. The connection portion was sealed with an epoxy-based sealing material (Hokuriku paint, chip coat 8107). Finally, solder balls, which are connection terminals with the mounting substrate, were mounted on the wiring tape to obtain the semiconductor device shown in FIG. 6-2.

The reflow characteristics and the connection reliability of the leads and the solder bumps of the obtained semiconductor device were confirmed in the same manner as in Example 1.

Comparative Example 1 A silicone resin (Toray Dow Corning, JCR6126) was positioned on a wiring tape, and an elastomer having a thickness of 150 μm was formed by printing using a metal mask. After the formation, the flatness of the elastomer after the curing reaction printing was measured in a thermostat at 150 ° C. for 60 minutes using a laser film thickness meter. As an adhesive layer for attaching a semiconductor element to a wiring tape having an elastomer, a silicone adhesive (Shin-Etsu Chemical, KE1820) is applied to the upper surface of the elastomer by 20 μm,
The semiconductor element was attached after alignment. At this time, the bonding conditions were 150 ° C. for 1 minute and a pressure of 30 kgf / cm ² . Next, it was electrically connected to the pad of the semiconductor element by gang bonding using the connection lead on the wiring tape.
Use silicone-based sealing material (Toshiba Silicone, TS
J3150). Finally, solder balls, which are connection terminals with the mounting substrate, were mounted on the wiring tape to obtain the semiconductor device shown in FIG.

The reflow characteristics and connection reliability of the leads and the solder bumps of the obtained semiconductor device were confirmed in the same manner as in Example 1.

(Comparative Example 2) Using an epoxy film containing no low elastic modulus component, a film composed of YX4000 (oiled shell) and E-180 (oiled shell) (equivalent ratio),
It was positioned and attached to the wiring tape. At this time, the bonding conditions were 150 ° C. for 1 minute and a pressure of 30 kgf / cm ² . Next, the wiring tape to which the film material was attached and the semiconductor element were bonded. Bonding conditions: 200 ° C for 30 seconds, pressure 20kgf / cm
^{And 2} .

Next, the connection leads on the wiring tape were electrically connected to the pads of the semiconductor element by gang bonding. The connection was sealed with an epoxy-based sealing material (Hitachi Chemical, RC021C). Finally, solder balls, which are connection terminals with the mounting board, are mounted on the wiring tape, and FIG.
-2 was obtained.

The reflow characteristics and connection reliability of the leads and the solder bumps of the obtained semiconductor device were confirmed in the same manner as in Example 1.

[0044]

[Table 1]

[0045]

The tape material having the wiring layer and the semiconductor element are electrically connected to each other, and the wiring tape has external terminals for electrically connecting to the mounting substrate. In a semiconductor device using a film material as a material to be adhered to a semiconductor device, a semiconductor device having excellent reflow resistance can be provided by using a material in which an adhesive film is composed of a thermosetting resin component and a low elastic modulus resin component. By using a film material for a portion that buffers thermal stress caused by a difference in thermal expansion coefficient between the semiconductor element and the mounting board, a manufacturing method excellent in mass productivity can be provided.

The film material has excellent flatness,
A height difference of 5 μm or less can be ensured for a thickness of about 150 μm, and a manufacturing process excellent in workability can be provided. Due to the stress buffering effect of the film material, the connection reliability of both the lead part that electrically connects the wiring tape and the semiconductor element and the bump that electrically connects the semiconductor device and the mounting board in the temperature cycle test are simultaneously improved. It is possible to be satisfied.

[Brief description of the drawings]

FIG. 1 is a diagram showing a manufacturing process of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a plan view of a semiconductor device having peripheral pads according to an embodiment of the present invention.

FIG. 3 is a view showing a manufacturing process of a semiconductor device using peripheral pads according to an embodiment of the present invention.

FIG. 4 is a plan view of a semiconductor device having a pad in a central portion according to an embodiment of the present invention.

FIG. 5 is a side sectional view of a semiconductor device having a pad in a central portion according to an embodiment of the present invention.

[Explanation of symbols]

1.1, 3.1, 5.1 ... wiring tape, 1.1.1, 1.1.
1 ': lead, 1.2, 3.2, 5.2 ... buffer film,
1.3, 2.1, 3.3, 4.1, 5.3 ... semiconductor element, 1.
4, 3.4, 5.4 ... sealing resin, 1.5, 3.5, 5.5 ...
External terminals (solder bumps), 2.1.1, 4.1.1 ... connection pads, 3.6 ... outer frames (heat spreader, etc.).

──────────────────────────────────────────────────の Continuation of the front page (51) Int.Cl. ⁶ Identification code FI C08L 79/00 C08L 79/00 C09J 7/02 C09J 7/02 Z H01L 23/14 H01L 23/14 R (72) Inventor Segawa Masanori 7-1-1, Omika-cho, Hitachi City, Ibaraki Prefecture, Hitachi, Ltd.Hitachi Laboratory, Hitachi, Ltd. Inventor Asao Nishimura 5-2-1, Josuihoncho, Kodaira-shi, Tokyo Inside the Semiconductor Division, Hitachi, Ltd. (72) Inventor Yukiharu Akiyama 5-2-1, Josuihoncho, Kodaira-shi, Tokyo Hitachi, Ltd. Semiconductor Division (72) Inventor Chuichi Miyazaki 5-2-1, Josuihonmachi, Kodaira-shi, Tokyo Inside Semiconductor Division, Hitachi, Ltd.

Claims (10)

[Claims] A semiconductor device is electrically connected to a tape material having a wiring layer, and external terminals for electrically connecting to a mounting substrate are provided on the wiring tape. 1. A semiconductor device using a film material as a material to be adhered to a semiconductor device, wherein the film material for adhesion comprises a thermosetting resin component and a low elastic modulus resin component. 2. The thermosetting resin component of the film material according to claim 1, wherein the thermosetting resin component is an epoxy resin, a polyimide resin, a polyamide resin,
Cyanate resin, isocyanate resin, fluorine-containing resin,
A semiconductor device comprising a silicon-containing resin, a urethane resin, a styrene resin, a maleimide resin, a phenol resin, an unsaturated polyester resin, a diallyl phthalate resin, a cyanamide resin, and a polybutadiene resin. 3. The semiconductor device according to claim 1, wherein the low elastic modulus resin component of the film material is an acrylic rubber, a polybutadiene rubber, an acrylonitrile butadiene rubber, a fluorine-based rubber, or a silicone-based rubber. 4. A semiconductor device according to claim 1, wherein the low elastic modulus resin component of the film material is 10 to 15 parts by weight of the whole composition. 5. The semiconductor device according to claim 1, wherein the film material has a three-layer structure having an adhesive layer on both surfaces of a support. 6. A semiconductor device according to claim 4, wherein the support of the film material is made of polyimide. 7. A tape material having a wiring layer and a semiconductor element are electrically connected to each other, and the wiring tape has external terminals for electrically connecting to a mounting substrate. A method for manufacturing a semiconductor device, wherein a film material for bonding comprises a thermosetting resin component and a low elastic modulus resin component in a semiconductor device using a film material as a material to be adhered to a semiconductor device. 8. A step of attaching an adhesive film to a tape having a wiring layer, (2) a step of insulatingly attaching a semiconductor element to the tape having a wiring layer via the adhesive film, and (3). A step of electrically connecting a wiring layer formed on the tape to a pad on the semiconductor element; (4) a step of sealing the electrically connected portion with an insulator;
(5) A method of manufacturing a semiconductor element, comprising: forming an external terminal for connecting to a mounting substrate on a tape. 9. A step of attaching an adhesive film to a tape having a wiring layer, (2) a step of insulatingly attaching a semiconductor element to a tape having a wiring layer via the adhesive film, and (3). A step of electrically connecting a wiring layer formed on the tape to a pad on the semiconductor element; (4) a step of sealing the electrically connected portion with an insulator;
(5) A method of manufacturing a semiconductor element, comprising: forming an external terminal for connecting to a mounting substrate on a tape. 10. A step of attaching an adhesive film to a tape having a wiring layer, (2) a step of insulatingly attaching a semiconductor element to a tape having a wiring layer via the adhesive film, and (3). (4) electrically connecting a wiring layer formed on the tape to a pad on the semiconductor element;
A method of manufacturing a semiconductor device, comprising: a step of sealing the electrically connected portion with an insulator; and (5) a step of forming external terminals for connecting to a mounting substrate on a tape.