JP2003086620A5 - - Google Patents
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- Publication number
- JP2003086620A5 JP2003086620A5 JP2002199714A JP2002199714A JP2003086620A5 JP 2003086620 A5 JP2003086620 A5 JP 2003086620A5 JP 2002199714 A JP2002199714 A JP 2002199714A JP 2002199714 A JP2002199714 A JP 2002199714A JP 2003086620 A5 JP2003086620 A5 JP 2003086620A5
- Authority
- JP
- Japan
- Prior art keywords
- mass
- semiconductor device
- electrode
- semiconductor element
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000010410 layer Substances 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical group CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 claims description 2
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 claims description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002199714A JP3931749B2 (ja) | 1996-02-23 | 2002-07-09 | 突起電極を有する半導体装置の製造方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3642996 | 1996-02-23 | ||
| JP11608496 | 1996-05-10 | ||
| JP8-116083 | 1996-05-10 | ||
| JP8-116084 | 1996-05-10 | ||
| JP11608396 | 1996-05-10 | ||
| JP8-36429 | 1996-05-10 | ||
| JP2002199714A JP3931749B2 (ja) | 1996-02-23 | 2002-07-09 | 突起電極を有する半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9016103A Division JPH1027824A (ja) | 1996-02-23 | 1997-01-30 | 突起電極を有する半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003086620A JP2003086620A (ja) | 2003-03-20 |
| JP2003086620A5 true JP2003086620A5 (enExample) | 2004-12-02 |
| JP3931749B2 JP3931749B2 (ja) | 2007-06-20 |
Family
ID=27460261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002199714A Expired - Fee Related JP3931749B2 (ja) | 1996-02-23 | 2002-07-09 | 突起電極を有する半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3931749B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4533804B2 (ja) | 2005-06-02 | 2010-09-01 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
| JP4821187B2 (ja) * | 2005-06-30 | 2011-11-24 | トヨタ自動車株式会社 | 燃料電池システム |
| JP5357241B2 (ja) | 2011-08-10 | 2013-12-04 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP5385471B2 (ja) * | 2011-08-10 | 2014-01-08 | 新光電気工業株式会社 | 半導体装置の製造方法 |
| JP6021383B2 (ja) * | 2012-03-30 | 2016-11-09 | オリンパス株式会社 | 基板および半導体装置 |
| CN103208501B (zh) * | 2012-01-17 | 2017-07-28 | 奥林巴斯株式会社 | 固体摄像装置及其制造方法、摄像装置、基板、半导体装置 |
| KR102397018B1 (ko) * | 2017-08-29 | 2022-05-17 | 한국전자통신연구원 | 반도체 패키지의 제조 방법 |
| US12354988B2 (en) * | 2022-05-16 | 2025-07-08 | Northrop Grumman Systems Corporation | Bump structures for low temperature chip bonding |
-
2002
- 2002-07-09 JP JP2002199714A patent/JP3931749B2/ja not_active Expired - Fee Related
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