JP2003086567A - Apparatus and method for treating peripheral edge of substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating the peripheral edge of a substrate capable of suppressing metal contamination of an end face of the substrate. SOLUTION: The apparatus for treating the peripheral edge of the substrate comprises an etching nozzle 21, a pure water nozzle 22 and a gas nozzle 23 disposed above the peripheral edge of a wafer W which is held by a vacuum chuck 10. The nozzles 21, 22 and 23 are rotatably moved by a turning drive mechanism 27. Thus, an etchant supply position P1 can be changed within a non-device forming region of the peripheral edge of the wafer W. Further, a pure water supply position P2 can be changed within the non-device forming region of the peripheral edge of the wafer W from a device-forming region in the wafer W.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for etching away unwanted substances from the peripheral portions of various substrates. Various substrates include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for PDPs (plasma display panels), glass substrates for photomasks, optical disks, magnetic disks, and the like.

[0002]

2. Description of the Related Art In the process of manufacturing a semiconductor device, a metal thin film such as a copper thin film is formed on the entire front surface, back surface and end surface of a semiconductor wafer (hereinafter simply referred to as "wafer"), and then this metal thin film is unnecessary. A process of etching away a portion may be performed. For example, the copper thin film for forming the wiring may be formed in a device forming region (a substantially circular region where a semiconductor device is to be formed) on the surface of the wafer, and the peripheral portion of the wafer surface where the device is not formed is formed. (A substantially donut-shaped region around the wafer edge including the wafer end surface) and the copper thin film formed on the back surface are unnecessary,
A process of removing this unnecessary copper thin film is performed.

An apparatus for removing a metal thin film formed on the peripheral portion of the surface of a wafer is a spin chuck that rotates about an axis that passes through substantially the center of the wafer and is vertical to the wafer while holding the wafer substantially horizontally. An etching nozzle for ejecting an etching solution toward the peripheral portion of the surface of the wafer held by the spin chuck, and pure water for supplying pure water to almost the center of the surface of the wafer held by the spin chuck. And a nozzle.

When removing the metal thin film, the wafer is rotated by the spin chuck, and the etching liquid is ejected from the etching nozzle toward the peripheral portion of the surface of the rotating wafer. While the etching liquid is being discharged from the etching nozzle, the pure water nozzle supplies pure water toward the center of the surface of the wafer.

As a result, the entire device forming region in the central portion of the surface of the wafer is covered with pure water, and the mist of the etching solution is scattered and tends to enter toward the device forming region in the central portion of the wafer surface. However, there is no possibility that the mist of the etching solution will directly adhere to the metal thin film formed on the device formation region. Therefore, the metal thin film in the device formation region is not likely to be corroded by the etching solution.

Since this pure water plays a role of protecting the device forming area in the central portion of the substrate, it can be stopped only after the supply of the etching liquid to the peripheral portion of the wafer is completed.

[0007]

However, the pure water covering the device formation region causes metal ions to flow out from the metal thin film in the device formation region. Therefore, as described above, when only pure water is supplied to the device formation region in the central portion of the wafer after the supply of the etching liquid is stopped, the metal ions from the metal thin film are melted and flowed out, and Will adhere to. The metal ions adhering to the peripheral edge of the wafer, particularly the end surface, are transferred to the member holding the substrate during the subsequent substrate transfer or substrate processing, and another substrate is seriously contaminated. turn into.

Therefore, an object of the present invention is to provide a substrate peripheral edge processing apparatus and a substrate peripheral edge processing method capable of suppressing metal contamination of the end surface of the substrate.

[0009]

In order to achieve the above-mentioned object, the invention according to claim 1 is centered on a rotation axis (O) passing through substantially the center of the substrate (W) and perpendicular to the substrate. A substrate peripheral edge processing device for etching and removing unwanted matter on the peripheral edge of one surface of the substrate while rotating the substrate, wherein an etchant supply position (P1, P
1 '), an etching liquid discharge nozzle (21) for discharging the etching liquid, and a rinse liquid supply position (P) closer to the rotation axis than the etching liquid supply position on one surface of the substrate.
2, P2 ′), a rinse liquid discharge nozzle (22) for discharging a rinse liquid, and a supply position changing means (27) for changing the etching liquid supply position and the rinse liquid supply position.
And a substrate peripheral edge processing apparatus.

The alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies in this section below.

According to the present invention, the device forming region (D1) inside the substrate is protected by the rinse liquid, while the device is not formed in the peripheral portion of the substrate (hereinafter referred to as the non-device forming region (D2)). ) Can be etched, and the supply positions of the etching liquid and the rinse liquid on the substrate can be changed. Therefore, even when metal ions flow out from the device formation region and adhere to the end surface (C) of the substrate as in the conventional case,
By positioning the supply position of the etching liquid and the rinse liquid at the peripheral portion of the substrate for processing, the peripheral portion including the end face of the substrate can be washed again, and metal contamination of the end face of the substrate can be suppressed.

It is preferable that the supply position changing means can change the supply positions of the etching liquid and the rinsing liquid so as to move away from the rotation axis of the substrate, that is, to approach the outer periphery of the substrate. Further, it is preferable that the etching supply position is changed to at least two positions in the boundary portion (d) between the device formation region and the non-device formation region and in the non-device formation region at the peripheral portion of the substrate. Further, the rinse liquid supply position is preferably changed to at least two positions in the device formation region inside the substrate and in the non-device formation region at the peripheral portion of the substrate. Particularly, the rinse liquid supply position in the device formation region is Most preferably, it is in the vicinity of the outer peripheral portion of the device formation region.

The etching solution referred to here is for etching metal thin films such as sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, citric acid, TMAH (tetramethylammonium hydroxide), ammonia, and hydrogen peroxide aqueous solutions thereof. A rinsing liquid that contains possible liquids is IPA
It includes an organic solvent such as (isopropyl alcohol), pure water, carbonated water, ionic water, ozone water, magnetic water, and liquid that does not etch a metal thin film such as reduced water (hydrogen water).

Further, the invention according to claim 2 is characterized in that the supply position changing means can position the rinse liquid supply position at least at a peripheral portion of one surface of the substrate. It is a peripheral processing device.

According to the present invention, the rinsing liquid can be supplied only to the non-device forming region by arranging the rinsing liquid supplying position on the peripheral portion of the substrate. Therefore, the rinse liquid supplied at this time can flow without passing through the device formation region, and at this time, metal ions do not flow out from the device formation region. Therefore, when the peripheral edge of the substrate is finally rinsed, the etching liquid remaining on the peripheral edge including the end face of the substrate can be washed away without leaving metal contamination on the end face of the substrate.

Here, the supply position changing means is a means for moving the etching solution supply nozzle and the rinse solution supply nozzle away from the rotation axis of the substrate, for example, linearly moving the nozzle. Alternatively, it may be a motor or a cylinder for rotating or rotating. In addition, the supply position changing means may change the supply position on the substrate by changing the direction of the nozzle (the discharge direction of the processing fluid). Alternatively, an etching liquid supply nozzle and a rinse liquid supply nozzle similar to this are further provided at positions different from the etching liquid supply nozzle and the rinse liquid supply nozzle, and the supply of the processing fluid from these two sets of nozzles is performed by a valve. The supply position may be changed by selectively switching. The supply position changing means may integrally change both the etching liquid supply position and the rinse liquid supply position, or may change them separately. In particular, when the supply position changing means moves the nozzle, both the etching solution supply nozzle and the rinse solution supply nozzle may be integrally moved, or they may be moved separately. May be.

The invention according to claim 4 is characterized in that the etching solution supply position is located downstream of the rinse solution supply position with respect to the substrate rotation direction (R). The substrate edge processing apparatus according to any one of 1 to 3.

According to the present invention, since the etching liquid supply position is on the downstream side of the rinse liquid supply position in the rotation direction of the substrate, the etching liquid supplied onto the substrate is moved from the upstream side in the rotation direction as the substrate rotates. It is covered with the rinse liquid that spreads to the downstream side. Therefore, it is possible to better prevent the etchant from entering the device formation region inside the substrate.

Further, the invention according to claim 5 is a gas discharge nozzle (for discharging gas toward a gas supply position (P3, P3 ') closer to the rotation axis than the rinse liquid supply position on one surface of the substrate. 23) The substrate edge processing apparatus according to any one of claims 1 to 4, further comprising: 23).

According to the present invention, the gas is supplied to the inside of the substrate rather than the rinsing liquid supply position, so that the etching liquid can be better prevented from entering the device forming region inside the substrate.

The gas discharged from the gas discharge nozzle includes an inert gas such as nitrogen gas and a gas that does not react with the metal thin film such as clean air.

According to a sixth aspect of the present invention, the substrate is rotated about an axis of rotation which passes through substantially the center of the substrate and is perpendicular to the substrate, and at the same time, removes unnecessary substances on the peripheral edge of one surface of the substrate. A substrate peripheral edge processing method, comprising a first etching supply position (P1) at a peripheral edge portion of one surface of a rotating substrate.
A first etching step (S1) of discharging the etching liquid toward the first rinse liquid supply position (P2) closer to the rotary shaft than the first etching liquid supply position, and After the first etching step, the discharge of the etching solution is stopped and only the rinse solution is discharged toward the first rinse solution supply position, and after the first rinse step, First above
A second etching step (S3) of discharging the etching liquid toward a second etching supply position (P1 ′) farther from the rotation axis than the etching supply position, and stopping the discharging of the etching liquid after the second etching step. And a second rinse step (S4) of supplying only the rinse liquid toward the second rinse position (P2 ′) on the peripheral portion of the one surface of the substrate. .

According to the present invention, in the first etching step, the peripheral portion of the substrate is etched while protecting the device forming region inside the substrate with the rinse liquid, and then in the first rinse step, the peripheral portion of the substrate is etched with the rinse liquid. The solution is once rinsed, then the peripheral edge of the substrate is etched again in the second etching step, and finally, the rinse liquid is discharged to the peripheral edge of the substrate in the second rinse step to remove the etching liquid remaining on the peripheral edge of the substrate. Wash away. As a result, it is possible to favorably suppress metal contamination of the end surface of the substrate without invading the etching solution into the device formation region inside the substrate.

It is preferable that the first etching supply position is at the boundary between the device formation region and the non-device formation region, and the second etching supply position is inside the non-device formation region. Further, it is preferable that the first rinse liquid supply position is within the device formation region and the second rinse liquid supply position is within the non-device formation region. Particularly, with respect to the first rinse liquid supply position, the outer periphery of the device formation region is preferable. It is most desirable to be near the part. Further, it is preferable that the second rinse supply position is closer to the rotation axis than the second etching supply position.

In the invention according to claim 7, in the second etching step, at the same time, the rinse liquid is directed toward a position closer to the rotation axis than the second etching supply position in the peripheral portion of the substrate. The substrate peripheral edge processing method according to claim 6, wherein the substrate peripheral edge processing method is supplied.

According to the present invention, even when the peripheral portion of the substrate is etched again in the second etching step, the rinse liquid is supplied toward the inside of the substrate from the etching liquid supply position in the peripheral portion of the substrate. To do. Therefore, this second
Even in the etching step, the etchant can be effectively prevented from entering the device forming region inside the substrate.

Further, the invention according to claim 8 is a substrate peripheral edge processing method for etching and removing unnecessary matters in the peripheral edge portion of the substrate while rotating the substrate, while protecting the central portion of the substrate with a rinse liquid. After the peripheral portion of the substrate is etched with the etching liquid, only the peripheral portion of the substrate is etched again with the etching liquid, and then only the peripheral portion of the substrate is washed again with the rinse liquid. .

According to the present invention, the metal contamination on the end face of the substrate can be satisfactorily suppressed without invading the etching solution into the device forming region inside the substrate.

Here, "protecting the central part of the substrate with a rinse liquid" means that the rinse liquid is used to prevent the etching liquid from entering the device formation region of the substrate. Anything may be used such that the entire device formation region in the central portion of the substrate is covered with the rinse liquid, and the rinse liquid is supplied to the position on the inner side of the substrate near the etching liquid supply position. May be.

[0030]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a side view schematically showing the structure of a substrate peripheral edge processing apparatus according to an embodiment of the present invention. FIG. 2 is a plan view schematically showing the structure of the substrate peripheral edge processing apparatus according to the embodiment of the present invention. In this substrate edge processing apparatus, a metal thin film (for example, a copper thin film) is formed on the surface and the end surface of a wafer W which is a substantially circular substrate, and then formed on the peripheral portion (including the end surface) of the surface of the wafer W. This is an apparatus for removing an unnecessary metal thin film.

This substrate edge processing apparatus is equipped with a vacuum chuck 10. Vacuum chuck 10
Includes a chuck shaft 11 arranged substantially vertically and a disc-shaped suction base 12 fixed to the upper end of the chuck shaft 11 substantially horizontally. The chuck shaft 11 has, for example, a suction path 13 formed therein by being formed in a cylindrical shape, and an upper end of the suction path 13 is sucked through a suction path formed inside the suction base 12. It communicates with the suction port formed on the upper surface of the base 12. Rotational force is input to the chuck shaft 11 from a rotary drive mechanism 14 including a motor and the like.

As a result, the vacuum chuck 10 is
The wafer W is the surface (device forming surface) on the adsorption base 12.
By sucking the inside of the suction path 13 with the wafer placed upward, the back surface (non-device forming surface) of the wafer W can be vacuum-sucked and held substantially horizontally.
Then, in this state, the rotational force is transmitted from the rotary drive mechanism 14 to the chuck shaft 11, so that the wafer W sucked and held by the suction base 12 is rotated around a vertical axis (rotational axis O of the wafer W) passing through substantially the center thereof. Can be rotated.

On the left side of the vacuum chuck 10, an etching liquid (for example, hydrofluoric acid), pure water,
Further, a nozzle mechanism 20 for discharging a processing fluid such as nitrogen gas is provided. The nozzle mechanism 20 discharges an etching solution to the peripheral portion of the wafer W, a pure water nozzle 22 to discharge pure water to the peripheral portion of the wafer W, and a nitrogen gas to the peripheral portion of the wafer W. Gas nozzle 23, bracket 24 that integrally holds these nozzles 21, 22, 23, and this bracket 24
Is attached to the tip of the arm 25 and extends in a substantially horizontal curve, a swing shaft 26 attached to the base of the arm 25 and rotatable about a substantially vertical axis G, and the swing axis 26 is an axis G. A swivel drive mechanism 27 for swiveling around
(For example, an AC servo motor or a stepping motor).

Here, in order to make the drawing easier to understand, in FIG. 1, only the front end portion of the nozzle mechanism 20 beyond the bracket 24 is replaced with a side view seen from the arrow A of FIG.

With the construction of these nozzle mechanisms 20, FIG.
As also shown in the plan view of FIG. 1, the nozzles 21, 22, 23 attached to the tip of the nozzle can be rotated clockwise and counterclockwise in a plan view about the axis G, and the nozzles are provided above the wafer W. 21, 22, 23 can be moved between the inside and the outside of the wafer W. That is, the nozzles 21, 22, and 23 can be moved closer to or farther from the rotation axis O of the wafer W.

Further, an elevation drive mechanism 30 for raising and lowering the entire nozzle mechanism 20 is provided so that the nozzles 21, 22 and 23 can be moved closer to or farther from the upper surface of the wafer W. Has become.
That is, the distance between the wafer W and the tips of the nozzles 21, 22, and 23 can be changed.

Here, the nozzles 21, 22 and 23 are, respectively, as shown in FIG.
And piping 210, 220, 2 for the nitrogen gas supply source
They are connected by 30 and in the middle,
Valves 211, 221, 231 that can be opened and closed are provided.

The tips of the nozzles 21, 22, 23 are
They are needle-shaped tubes 21a, 22a, 23a,
Each processing fluid can be discharged finely and almost linearly. For example, the needle-shaped tubes 21a, 2
The inner diameter of the discharge port of 2a and 23a is 0.1 to 3.0 mm
It is formed to be thin. In addition, the needle tube 21a,
The angles of the nozzles 22a and 23a can be adjusted with respect to the main body of the nozzles 21, 22 and 23.
The angle between the upper surface of the nozzle and the discharge direction of the processing fluid from the nozzles 21, 22, and 23 can be adjusted within the range of 10 to 60 degrees. In addition, the needle-shaped tubes 21a, 22a, 23a
The distance between the tip of the wafer W and the upper surface of the wafer W can be set within the range of 0.5 to 20 mm by the elevating and lowering drive mechanism 30. Further, as the material of the nozzles 21, 22, 23 including the needle-shaped tubes 21a, 22a, 23a, fluororesin (PFA, PTFE, PCTFE, etc.) is used in consideration of liquid resistance.
It consists of

Here, a position (hereinafter referred to as a processing fluid supply position) on the processing fluid wafer W discharged from the nozzles 21, 22, 23 will be described. At a certain timing, the etching liquid supply position is P1, the pure water supply position is P2, and the nitrogen gas supply position is P3.
As shown in FIGS. 1 and 2, with respect to the direction of moving away from the rotation axis O of the wafer W, P3, P2, and P1 are arranged in the order closer to the rotation axis O of the wafer W. The processing fluid supplied to the predetermined supply position receives the centrifugal force due to the rotation of the wafer W and tries to flow to the outside of the wafer W.
As a result, the etching liquid supplied to P1 is transferred to the wafer W.
In order not to enter the device forming region D1 inward, P1
Further, pure water can be supplied to the inner side of the wafer W to protect it, and nitrogen gas can be supplied to the inner side of the wafer W to protect it.

Further, as shown in FIG. 2, with respect to the rotation direction R of the wafer W, P3, P are arranged in this order from the upstream side to the downstream side.
It is lined up in the order of 2 and P1. As indicated by the dotted line area in FIG. 2, the processing fluid supplied to the predetermined supply position tends to flow downstream with respect to the rotation direction R as the wafer W rotates. Therefore, if the supply positions are set in this order, the etching liquid can be covered with pure water and further with nitrogen gas, and the etching liquid can be effectively prevented from entering the device formation region D1. As can be seen from FIGS. 1 and 2, the discharge direction of the processing fluid from the nozzles 21, 22, 23 is outside the wafer W with respect to the direction away from the rotation axis O of the wafer W (the rotation radius direction of the wafer W). At the same time, it is inclined toward the downstream side of the wafer W with respect to the rotation direction R of the wafer W. This allows the processing fluid supplied onto the wafer W to flow without countering the centrifugal force and rotational force (rotational moment) of the wafer W, so that the processing fluid enters the device formation region D1 inside the wafer W. This can be better prevented. In addition, this nozzle 2
1, 22, and 23 may be inclined with respect to either the radial direction of the wafer W or the rotational direction R of the wafer W.

<Processing Procedure of One Embodiment>

Next, a processing procedure in this substrate peripheral processing apparatus will be described. FIG. 3 is a side view showing the periphery of the wafer W in an enlarged manner in the order of processing.

First, the wafer W having the copper thin film Cu formed on the upper surface thereof is carried in by a transfer robot (not shown) and transferred to the vacuum chuck 10. When the wafer W is held on the vacuum chuck 10, the vacuum chuck 10 and the wafer W start to rotate in the rotation direction R at a predetermined rotation speed. At this time, the nozzles 21, 22, and 23 are retracted to a position outside the wafer W (a position indicated by a chain double-dashed line in FIG. 2). Before being loaded into this substrate peripheral processing apparatus, of the copper thin film Cu formed on the entire surface of the wafer W, the copper thin film Cu on the entire lower surface of the wafer W is already etched and removed by an etching solution. Has been done.

After that, the swivel drive mechanism 27 swivels the nozzles 21, 22, 23 clockwise in the plan view of FIG. 2, and moves them above the wafer W as shown in FIG. 3A. At this time, etching is performed on a boundary line d (for example, a circumference formed at a position of 5 mm inward of the substrate from the wafer outer periphery) between the circular device formation area D1 and the donut-shaped non-device formation area D2 surrounding the periphery. The nozzles 21, 22, 23 are moved so that the liquid supply position P1 comes. At this time, the pure water supply position P2 is set near the outer peripheral portion of the device forming region D1 (near the boundary line d). Then, the valves 211, 221, 231 are opened and the nozzle 21
The etching liquid is discharged from the needle-shaped tube 21a of the nozzle 22 toward P1, pure water is discharged from the needle-shaped tube 22a of the nozzle 22 toward P2, and the nitrogen gas is discharged from the needle-shaped tube 23a of the nozzle 23 toward P3 at almost the same time. It As a result, the device formation region D1
While the wafer W is protected with pure water and nitrogen gas, the peripheral edge of the wafer W is etched (step S1). At this time, it is preferable that the valves 231, 221, and 211 are opened in this order with the timing shifted, and the supply of nitrogen gas, pure water, and etching solution is started in this order. Further, in FIG. 2, the positions of the supply positions P1, P2 and P3 in plan view are indicated by “black circles”.

By performing this step S1 for a predetermined time,
After the copper thin film in the non-device forming region D2 and the end face portion C is removed by etching, as shown in FIG.
Only 11 is closed to stop the supply of the etching solution to the supply position P1, and a rinse process is performed to wash away the etching solution on the peripheral portion of the wafer W by supplying pure water to the supply position P2 (step S2). At this time, the supply of nitrogen gas from the gas nozzle 23 to the supply position P3 is continued.

After performing step S2 for a predetermined time, as shown in FIG. 3 (c), the swivel drive mechanism 27 swivels the nozzles 21, 22, 23 counterclockwise in the plan view of FIG. The pure water supply position P2 is moved to the outside of the wafer W by a predetermined distance away from the rotation axis O, and the pure water supply position P2 is located at the pure water supply position P2 ′ in the non-device formation area D2 outside the substrate with respect to the boundary line d. Let Then again the valve 211
Is opened to supply the etching liquid from the etching nozzle 21 to the supply position P1 ′. Due to the action of this etching liquid, the end surface portion C of the wafer W is
The copper ions attached to the are removed (step S
3). Also in this step 3, the gas nozzle 23
Although the nitrogen gas is continuously supplied from, the supply position is P3 '. That is, in this step 3, the processing fluid supply position is changed from P1 to P1 ′ and from P2 to P2 ′.
Will be changed from P3 to P3 '. In FIG. 2, the positions of the supply positions P1 ′, P2 ′, P3 ′ in plan view are indicated by “white circles”.

In this step S3, it is not necessary to supply pure water to the supply position P2 '. However, in order to prevent the etching solution from entering the device formation region D1, it is necessary to supply pure water in step S2.
It is preferable to continue the process.

By performing this step S3 for a predetermined time,
After the copper ions on the end face portion C are removed, as shown in FIG. 3D, only the valve 211 is closed to stop the supply of the etching solution to the supply position P1 ′, and the supply position P2 ′ is again displayed.
A rinsing process is performed to wash away the etching liquid on the peripheral portion of the wafer W with pure water supplied to the wafer (step S4). At this time as well, the supply of the nitrogen gas from the nozzle 23 to the supply position P3 ′ is continued.

Although the processing is completed by the series of processing in the above steps S1 to S4, after the completion of step 4, the nozzles 21, 22 and 23 are swung by the swivel drive mechanism 27 and retracted to the outside of the wafer W. It is moved to the position (the position shown by the chain double-dashed line in FIG. 2), carried out by a transfer robot (not shown), and transferred to the next processing device.

<Effect of One Embodiment>

As described above, in the substrate edge processing apparatus according to this embodiment, the device forming area D inside the wafer W is formed.
While the non-device formation region D2 at the peripheral portion of the wafer W can be etched while protecting 1 with pure water as a rinse liquid, the etching liquid supply position P1 and the pure water supply position P2
Can be changed to P1 'and P2', respectively.
Therefore, in steps S1 and S2 described above, even if the copper ions flow out from the device forming region D1 due to the pure water and the copper ions adhere to the end surface C of the wafer, the supply position of the etching solution and the pure water is set to the peripheral edge of the wafer W. By arranging at the supply positions P1 ′ and P2 ′ in the non-device region D2 for processing, the peripheral portion including the end surface C of the wafer W can be cleaned again, and metal contamination of the end surface C of the wafer W ( Copper contamination) can be suppressed.

Further, in the substrate peripheral edge processing apparatus according to this embodiment, the pure water supply position can be located at the supply position P2 'at the peripheral portion of the wafer W so that pure water can be supplied only to the non-device formation area D2. Therefore, when the peripheral edge of the wafer W is finally rinsed, the etching liquid remaining on the peripheral edge of the wafer W including the end face C is washed away without leaving metal contamination (copper contamination) on the end face C of the wafer W. You can

Further, in the substrate edge processing apparatus according to this embodiment, the etching liquid supply positions P1 and P1 'are located downstream of the pure water supply positions P2 and P2' in the rotational direction R of the wafer W, respectively. The etching liquid supplied to the wafer W is covered with pure water that has spread from the upstream side to the downstream side in the rotation direction R as the wafer W rotates. Therefore, it is possible to better prevent the etchant from entering the device formation region D1 inside the wafer W.

Furthermore, in the substrate peripheral edge processing apparatus according to this embodiment, since the nitrogen gas is supplied to the supply positions P3 and P3 'inside the wafer W from the pure water supply positions P2 and P2', the etching is performed. The liquid can be better prevented from entering the device forming region D1 inside the wafer W.

Further, in the substrate peripheral edge processing method according to this embodiment, in step S1 described above, the non-device formation area D2 at the peripheral edge of the wafer W is etched while the device formation area D1 inside the wafer W is protected by pure water. ,next,
In step S2, the etchant is once rinsed with pure water, then in step S3, the non-device forming area D2 on the peripheral edge of the wafer W is etched again, and finally, in step S4, the non-device forming area D2 on the peripheral edge of the wafer W is etched. Deionized water is discharged onto the non-device forming area D
The etching solution remaining in 2 is washed away. Thereby, metal contamination (copper contamination) on the end surface C of the wafer W can be favorably suppressed without invading the etching liquid into the device formation region D1 inside the wafer W.

Further, in the substrate peripheral edge processing method in this embodiment, even when the non-device forming area D2 on the peripheral edge of the wafer W is etched again in step S3, the non-device forming area D2 is etched. Pure water supply position P inside the wafer W with respect to the liquid supply position P1 '
Pure water is supplied toward 2 '. Therefore, this step S
Also in the case of 3, the etching solution is effectively prevented from entering the device formation region D1 inside the wafer W.

Further, in the substrate peripheral edge processing method according to this embodiment, the peripheral portion of the wafer W is etched with the etching liquid while the central portion of the wafer W is protected with pure water (step S
After 1), only the peripheral portion of the wafer W is etched again with the etching solution (step S3), and then the wafer W
Only the peripheral edge portion of is washed again with pure water (step S4). As a result, the device formation region D1 inside the wafer W is formed.
The metal contamination (copper contamination) on the end surface C of the wafer W can be favorably suppressed without invading the etching solution into the.

<Modification of One Embodiment>

Although one embodiment of the present invention has been described above, the present invention can be implemented in other forms. For example, in the above-described embodiment, the nozzle 21
The etching liquid discharged from the device is hydrofluoric acid, but any liquid capable of etching the metal thin film in the device forming region D1 may be used. In addition, sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, acetic acid, citric acid, TMAH, It may be ammonia or any of these hydrogen peroxide aqueous solutions. Pure water is used as the rinse liquid ejected from the nozzle 22, but any liquid that does not etch the metal thin film in the device forming region D1 may be used. Other than this, carbonated water, ionized water, ozone water, magnetic water, and It may be any of reduced water. Further, although nitrogen gas is used as the gas discharged from the nozzle 23, any gas may be used as long as it does not react with the metal thin film, and any of inert gas such as argon gas and helium gas and clean air. It may be.

In the above-described embodiment, step 1
Further, the pure water supply position P2 in step 2 is near the outer peripheral portion of the device forming area D1, but may be any position within the device forming area D1, for example, in the central portion of the wafer W. It may be near the rotation axis O. However, in order to minimize the elution of metal ions, it is preferable that the pure water supply position P2 be near the outer peripheral portion of the device formation region D1 as in the above-described embodiment.

Further, in the above-described embodiment, the supply positions of the processing fluid are P1, P2, P3 and P1 ', P2', P3 '.
However, each processing fluid may be supplied to a plurality of positions.

Further, in the above-described embodiment, the supply position P
Nozzle 21, as a supply position changing means for changing 1, P2, P3 to supply positions P1 ′, P2 ′, P3 ′
A turning drive mechanism 27 for turning and moving 22 and 23.
(AC servo motor, stepping motor, etc.) is used, but the invention is not limited to this. For example, a linear drive mechanism (motor, cylinder, etc.) for linearly moving the nozzles 21, 22, 23 may be used. Further, for example, the nozzles 21, 22, and 23 are not limited to those that move, but the directions of the needle-shaped tubes 21a, 22a, and 23a are changed to change the discharge directions of the respective processing fluids. It may be changed.

Alternatively, as shown in FIG. 4, a nozzle mechanism 20 'similar to this is further provided at a position different from the nozzle mechanism 20, and the processing fluid is supplied from these two nozzle mechanisms 20, 20'. The supply position may be changed by selectively switching with a valve. In FIG. 4, the corresponding elements of the nozzle mechanism 20 ′ having the same function as the nozzle mechanism 20 are represented by adding “” to the symbol.

Specifically, the nozzles 21, 22, and 23 are respectively placed at the above-mentioned supply positions P1, P2, and P3.
1 ', 22', and 23 'are respectively the above-mentioned supply position P
The respective nozzle mechanisms 20, 20 'are arranged so as to eject the processing fluid toward 1', P2 ', P3'. Then, in steps S1 and S2 described above, the processing fluid is supplied from the nozzle mechanism 20 to the supply positions P1, P2, P3, and in steps S3 and S4 described above, the nozzle mechanism 20 ′ supplies positions P1 ′, P2 ′, P3. The valves 210, 220, 230 and 210 ', 220', 230 'are switched so as to supply the processing fluid to the'.
However, the supply source of the processing fluid is common to the nozzle mechanisms 20 and 20 '.

In the process, there is no particular need to move the supply positions of the processing fluids of the nozzle mechanisms 20 and 20 '.
7'can be omitted. However, in order to smoothly carry in and out the wafer W, in order to retract the nozzles 21, 22, 23 and 21 ', 22', 23 'from above the wafer W to the outside, the rotation drive mechanisms 27, 27' are used. It is good to provide.

Further, since the wafer W is rotating around the rotation axis O, the supply positions P1, P2, P3 and the supply position P are set.
1 ', P2', and P3 'do not have to be close to each other, and may be set apart from a position rotated about the rotation axis O. For example, as shown in FIG. 4, the two nozzle mechanisms 20 and 20 ′ may be arranged at positions substantially line-symmetric with respect to the rotation axis O, or may be displaced from each other by a predetermined angle with respect to the rotation axis O in a plan view. It may be arranged in a different position.

Further, in the above-described embodiment, the nozzle 2
1, 22 and 23 are integrally attached to one nozzle mechanism 20 by a bracket 24 so as to be integrally swivel-moved, but each nozzle is attached to a separate swivel drive mechanism, It may be configured to be separately rotated. Furthermore, the gas nozzle 23 is swung by the swivel driving means 27, and the supply position P3 is changed to P3 ′. However, the gas nozzle 23 may be moved together with the other nozzles 21 and 22. Good. For example, the nitrogen gas may be discharged while being fixed at the rotation center of the wafer W. That is, the gas supply positions P3 and P3 ′ may be set to coincide with the rotation center of the wafer W.

In the above-described embodiment, the copper thin film is taken as an example of the metal thin film to be formed in the device forming region D1, but the present invention is also applicable to the tungsten thin film, the titanium film, or the aluminum thin film. It is possible. However, as the metal contamination, the case of the copper thin film in which the elution of metal ions is remarkable is presently the biggest problem, and therefore the effect of the present invention is the largest in the case of the copper thin film.

Furthermore, although a semiconductor wafer is taken up as an example of the substrate, the present invention is directed to a glass substrate for a liquid crystal display device, a glass substrate for a PDP, a glass substrate for a photomask,
It can also be applied to an apparatus for processing other types of substrates such as optical disks and magnetic disks.

Besides, various design changes can be made within the scope of the matters described in the claims.

[0072]

As described in detail above, according to the substrate peripheral edge processing apparatus of the first aspect of the present invention, metal contamination of the end surface of the substrate can be prevented without invading the etching solution into the device forming region inside the substrate. The effect that it can suppress is produced.

According to the substrate edge processing apparatus of the second aspect of the present invention, metal contamination is not left on the end surface of the substrate,
The effect that the etching liquid remaining on the peripheral portion including the end face of the substrate can be washed away is obtained.

According to the substrate peripheral edge processing apparatus of the third aspect of the present invention, there is an effect that the supply position of the processing fluid can be easily changed.

According to the substrate edge processing apparatus of the fourth aspect of the present invention, there is an effect that it is possible to better prevent the etching solution from entering the device forming region inside the substrate.

According to the substrate edge processing apparatus of the fifth aspect of the present invention, there is an effect that it is possible to better prevent the etching solution from entering the device forming region inside the substrate.

According to the substrate peripheral edge processing method of the sixth aspect of the present invention, the metal contamination on the end face of the substrate can be satisfactorily suppressed without invading the etching solution into the device forming region inside the substrate. Produce an effect.

According to the substrate peripheral edge processing method of the seventh aspect of the present invention, there is an effect that it is possible to better prevent the etching solution from entering the device forming region inside the substrate.

Further, according to the substrate peripheral edge processing method of the present invention, the metal contamination on the end face of the substrate can be satisfactorily suppressed without invading the etching solution into the device forming region inside the substrate. Produce an effect.

[Brief description of drawings]

FIG. 1 is a side view schematically showing the configuration of a substrate edge processing apparatus according to an embodiment of the present invention.

FIG. 2 is a plan view schematically showing the structure of a substrate edge processing apparatus according to an embodiment of the present invention.

3 is a side view of a peripheral portion of a wafer W for explaining a processing procedure in the substrate peripheral edge processing apparatus of FIG.

FIG. 4 is a side view schematically showing a configuration of a substrate edge processing apparatus according to a modified example of the embodiment of the present invention.

[Explanation of symbols]

10 vacuum chuck 11 chuck axis 12 Adsorption base 13 suction path 14 Rotational drive mechanism 20 nozzle mechanism 21 Etching nozzle 22 Pure water nozzle 23 Gas nozzle 210, 220, 230 piping 211,221,231 valve 21a, 22a, 23a Needle tube 24 bracket 25 arms 26 swivel axis 27 Turning drive mechanism 30 lifting drive mechanism C Wafer W end face D1 device formation area D2 Non-device formation area d border O Wafer W rotation axis G swivel axis P1, P1 'Etching solution supply position P2, P2 'Pure water supply position P3, P3 'Nitrogen gas supply position R Wafer W rotation direction S1-S4 steps W wafer

Claims (8)

[Claims] 1. A substrate edge processing apparatus for etching and removing unwanted matter on a peripheral edge portion of one surface of a substrate while rotating the substrate about a rotation axis passing through substantially the center of the substrate and perpendicular to the substrate, An etching solution discharge nozzle that discharges the etching solution toward the etching solution supply position on the peripheral portion of one surface, and a rinse solution toward the rinse solution supply position closer to the rotation axis than the etching solution supply position on one surface of the substrate. 2. A substrate peripheral edge processing apparatus comprising: a rinse liquid discharge nozzle for discharging the cleaning liquid; and a supply position changing means for changing the etching liquid supply position and the rinse liquid supply position. 2. The substrate peripheral edge processing apparatus according to claim 1, wherein the supply position changing means can position the rinse liquid supply position at least at a peripheral portion of one surface of the substrate. 3. The supply position changing means moves the etching solution supply nozzle and the rinse solution supply nozzle so as to move away from the rotation axis. Substrate peripheral processing device. 4. The substrate peripheral edge according to claim 1, wherein the etching liquid supply position is located downstream of the rinse liquid supply position with respect to the rotation direction of the substrate. Processing equipment. 5. A gas discharge nozzle for discharging gas toward a gas supply position closer to the rotary shaft than the rinse liquid supply position on one surface of the substrate, further comprising a gas discharge nozzle. The substrate peripheral edge processing apparatus according to any one of claims. 6. A substrate peripheral edge processing method for etching and removing unwanted matter on the peripheral edge portion of one surface of a substrate while rotating the substrate about a rotation axis passing through substantially the center of the substrate and perpendicular to the substrate, The etching liquid is discharged toward the first etching supply position on the peripheral portion of the one surface of the rotating substrate, and the first etching liquid is closer to the rotation axis than the first etching liquid supply position.
A first etching step of discharging the rinse liquid toward the rinse liquid supply position, and the discharge of the etching liquid is stopped after the first etching step, and only the rinse liquid is discharged toward the first rinse liquid supply position. A first rinsing step for performing the second rinsing step, and a second rinsing step for discharging the etching solution toward the second etching supply position farther from the rotation axis than the first etching supply position after the first rinsing step; A second rinse step of stopping the discharge of the etchant after the etching step and supplying only the rinse solution to the second rinse position on the peripheral edge of the one surface of the substrate. Processing method. 7. The second etching step simultaneously supplies the rinse liquid toward a position closer to the rotation axis than the second etching supply position in the peripheral portion of the substrate. The substrate peripheral edge processing method according to claim 6. 8. A substrate peripheral edge processing method for etching and removing unwanted matter on the peripheral edge of the substrate while rotating the substrate, the central edge of the substrate being protected by a rinse liquid, and the peripheral edge of the substrate being etched by an etchant. After the etching, only the peripheral portion of the substrate is again etched with the etching liquid, and then only the peripheral portion of the substrate is washed again with the rinse liquid.