TWI787582B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

A substrate processing method includes a step of rotating a substrate about a central axis extending in the vertical direction (Step S11), a step of forming a gas-liquid interface between a gas and a rinsing liquid on one main surface of the upper and lower surfaces of the substrate by supplying the gas to a central portion of one main surface of the rotating substrate and supplying the rinsing liquid at a first flow rate to a central portion of the other main surface of the rotating substrate so as to wrap around a peripheral region of the one main surface (Step S13), and a step of supplying a chemical solution to the gas-liquid interface on one main surface to perform a chemical processing of the peripheral region after the Step S13 by supplying the chemical solution at a second flow rate smaller than the first flow rate to the central portion of the other main surface of the rotating substrate so as to wrap around the peripheral region of the one main surface of the substrate (Step S15). Thereby, the chemical processing of the peripheral region of the substrate can be performed suitably, suppressing the liquid splash of the chemical solution.

Description

Substrate processing method and substrate processing apparatus

The invention relates to a substrate processing method and a substrate processing device.

Conventionally, various treatments have been applied to the substrate in the manufacturing process of the semiconductor substrate (hereinafter simply referred to as "substrate"). For example, an etchant is supplied to a peripheral region (that is, a bevel portion) of a substrate on which a film has been formed on the surface, and an etching process for removing the film in the peripheral region is performed. In Japanese Patent Application Laid-Open No. 2010-93082 (Document 1) and Japanese Patent Laid-Open No. 2017-59676 (Document 2), the main surface of the substrate on which the film has been formed is directed upward, and the etching is sprayed from the nozzle toward the peripheral region of the upper surface. liquid, thereby removing the film in the peripheral region from the substrate.

In addition, in Japanese Patent Application Laid-Open No. 2003-273063 (Document 3), the main surface of the substrate on which the film has been formed is directed downward, and the etchant is supplied to the upper surface of the substrate and the etchant is wound into the peripheral region of the lower surface. This removes the film in the peripheral region from the substrate. In JP-A-2009-266951 (Document 4) and JP-A-2008-546184 (Document 5), the upper and lower systems of the substrate to be etched in the peripheral region are opposite to those disclosed in Document 3.

Document 3 proposes a technique of supplying a seal gas to the center of the lower surface of the substrate to form an air flow of the seal gas toward the radially outer side along the lower surface of the substrate, thereby controlling the lower surface of the substrate. The width of the etching solution in the peripheral region (that is, the etching width). Document 4 proposes a technique in which DIW (de-ionized water; deionized water) is supplied to the lower surface of the substrate before supplying the etching solution to the lower surface of the substrate, thereby suppressing the anisotropy of the etching solution. expand.

In addition, when the chemical solution is supplied to the main surface of one of the upper surface and the lower surface of the substrate and the peripheral region of the other main surface is treated with the chemical solution, when the supply flow rate of the chemical solution is large, there may be The chemical solution scattered around the rotating substrate may splash back on a cup or the like and adhere to the substrate. On the other hand, when the supply flow rate of the chemical solution is small, the winding width of the chemical solution toward the other main surface (that is, the chemical solution treatment width) may be insufficient. In addition, even when the supply flow rate of the chemical solution is small, the interface between the gas supplied to the other main surface (so-called sealing gas) and the chemical solution that has been wound into the other main surface may be inconsistent. There is a risk that the liquid treatment becomes unstable due to stability.

[Problem to be Solved by the Invention]

The present invention focuses on a substrate processing method, and aims to appropriately perform chemical treatment on the peripheral region of the substrate while suppressing splashing of the chemical solution.

A substrate processing method according to a preferred embodiment of the present invention includes: a step (a) of rotating the substrate held in a horizontal state around a central axis facing the up-and-down direction; Gas is supplied to the central portion of one of the main surfaces of the upper surface and the lower surface of the aforementioned substrate, and the cleaning liquid is supplied to the central portion of the other main surface of the aforementioned substrate at a first flow rate, and the aforementioned cleaning liquid is wound into the aforementioned The peripheral region of one main surface, thereby forming a gas-liquid interface between the aforementioned gas and the aforementioned cleaning liquid on the aforementioned one main surface; Step (c) is performed after the aforementioned step (b), at a rate less than the aforementioned first flow rate The second flow rate of a small flow rate supplies the chemical solution to the central portion of the other main surface of the rotating substrate and causes the chemical solution to wrap around the peripheral region of the one main surface, whereby the chemical solution on the one main surface The chemical solution is supplied on the surface up to the gas-liquid interface and the chemical solution treatment of the peripheral region is performed. According to this substrate processing method, it is possible to properly perform chemical processing on the peripheral region of the substrate while suppressing splashing of the chemical liquid.

Preferably, the aforementioned medicinal solution is a medicinal solution obtained by dissolving a solute in the aforementioned cleaning solution.

Preferably, the aforementioned substrate processing method is further provided between the aforementioned step (b) and the aforementioned step (c): the step (d) is to use a third flow rate that is smaller than the aforementioned first flow rate to control the rotation of the aforementioned The cleaning solution is supplied to the central portion of the other main surface of the substrate, and the cleaning solution is drawn into the peripheral region of the one main surface, thereby supplying the cleaning solution to the air-liquid interface.

Preferably, the second flow rate of the aforementioned chemical solution in the aforementioned step (c) is produced by dissolving the solute into the aforementioned third flow rate of the aforementioned cleaning solution.

Preferably, the rotation speed of the substrate is reduced between the steps (b) and (c), or in parallel with the start of the step (c).

The present invention also focuses on a substrate processing device. A substrate processing apparatus according to one preferred embodiment of the present invention includes: a substrate holding unit that holds a substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit around a central axis facing the vertical direction; and a gas supply unit. , is to supply gas to the central part of one main surface of the upper surface and the lower surface of the aforementioned substrate in rotation; The part supplies the cleaning liquid and makes the cleaning liquid go around to the peripheral region of the one main surface, thereby forming a gas-liquid interface between the gas and the cleaning liquid on the one main surface; and the liquid medicine supply part is The second flow rate, which is smaller than the first flow rate, supplies the chemical solution to the central portion of the other main surface of the rotating substrate and causes the chemical solution to wrap around the peripheral region of the one main surface. This supplies the chemical solution up to the air-liquid interface on the one main surface and performs chemical treatment of the peripheral region. According to this substrate processing apparatus, it is possible to appropriately perform chemical processing on the peripheral region of the substrate while suppressing splashing of the chemical liquid.

Preferably, between the cleaning liquid supply unit supplying the cleaning solution at the first flow rate and the chemical solution supply unit supplying the chemical solution, the cleaning solution supply unit uses a third flow rate smaller than the first flow rate. The flow rate supplies the cleaning solution to the central portion of the other main surface of the rotating substrate and makes the cleaning solution go around to the peripheral region of the one main surface, thereby supplying the cleaning solution to the gas-liquid interface.

Preferably, the chemical solution supply unit includes: a chemical solution generating unit that dissolves a solute in the cleaning solution at the third flow rate, thereby generating the chemical solution at the second flow rate.

The above object and other objects, features, aspects, and advantages will be clarified through the following detailed description of the present invention with reference to the accompanying drawings.

FIG. 1 is a side view showing the structure of a substrate processing apparatus 1 according to one embodiment of the present invention. The substrate processing apparatus 1 is a blade-type apparatus for processing a semiconductor substrate 9 (hereinafter simply referred to as “substrate 9 ”) one by one. The substrate processing apparatus 1 supplies and processes a substrate 9 with a processing liquid. A part of the structure of the substrate processing apparatus 1 is shown in cross-section in FIG. 1 .

The substrate processing apparatus 1 includes a substrate holding unit 31 , a substrate rotating mechanism 33 , a cover unit 4 , a processing liquid supply unit 5 , a gas supply unit 6 , a control unit 7 , and a housing 11 . The substrate holding part 31 , the substrate rotating mechanism 33 , the cover part 4 and the like are housed in the internal space of the housing 11 . The housing 11 is depicted in section in FIG. 1 . The top cover of the housing 11 is provided with an airflow forming part 12 which supplies gas to the inner space of the housing 11 to form an airflow flowing downward (so-called downflow). As the air flow forming unit 12 , for example, an FFU (fan filter unit; fan filter unit) is used.

The control unit 7 is disposed outside the casing 11 and controls the substrate holding unit 31 , the substrate rotating mechanism 33 , the processing liquid supply unit 5 , the gas supply unit 6 , and the like. The control unit 7 is, for example, a general computer including a processor, a memory, an input and output unit, and a bus. A bus is a signal circuit used to connect processors, memory, and input and output. The memory system stores programs and various information. The processor follows programs and the like stored in the memory, and executes various processing (such as numerical calculations) while utilizing the memory and the like. The input/output unit includes a keyboard and a mouse for receiving input from the operator, a monitor for displaying output from the processor, and a sending unit for sending output from the processor.

The control unit 7 includes a memory unit 71 and a supply control unit 72 . The memory unit 71 is mainly realized by a memory, and stores various information such as a processing recipe of the substrate 9 . The supply control unit 72 is mainly realized by a processor, and controls the treatment solution supply unit 5 and the like in accordance with the treatment recipe and the like stored in the memory unit 71 .

The substrate holding portion 31 faces the lower main surface (that is, the lower surface 92 ) of the substrate 9 in a horizontal state, and holds the substrate 9 from below. The substrate holding portion 31 is, for example, a mechanical chuck for mechanically supporting the substrate 9 . The substrate holding portion 31 is provided so as to be rotatable around the center axis J1 in the up-down direction.

The substrate holding part 31 includes a holding part main body and a plurality of (for example, six) chuck pins. The holding part is basically a disc-shaped member that faces the lower surface 92 of the substrate 9 . A plurality of clamp pins are arranged at substantially equal angular intervals in the circumferential direction centered on the central axis J1 (hereinafter also simply referred to as "circumferential direction") in the peripheral portion of the holding part body. Each jig pin protrudes upward from the upper surface of the holding unit body, contacts the portion near the periphery and the side surface of the lower surface 92 of the substrate 9 , and supports the substrate 9 . In the substrate processing apparatus 1, the substrate 9 is held by three of the six clamp pins in, for example, the first half of the chemical solution treatment for the peripheral region of the substrate 9 described later; In the second half of the chemical solution treatment of the area, the substrate 9 is held by the other three of the six clamp pins. Thereby, the uniformity in the circumferential direction of the chemical solution processing on the peripheral region of the substrate 9 can be improved. In addition, the plurality of jig pins are similarly driven when cleaning liquid is applied to the peripheral region of the substrate 9 .

The substrate rotation mechanism 33 is disposed below the substrate holding portion 31 . The substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holding unit 31 around the central axis J1. The substrate rotation mechanism 33 includes, for example, an electric rotation motor whose rotation shaft is connected to the holding unit body of the substrate holding unit 31 . The substrate rotation mechanism 33 may have other structures such as a hollow motor.

The processing liquid supply unit 5 individually supplies a plurality of types of processing liquids to the substrate 9 . The plural types of processing liquids include, for example, chemical liquids and cleaning liquids which will be described later. The processing liquid supply unit 5 includes a first nozzle 51 and a second nozzle 52 . The first nozzle 51 and the second nozzle 52 supply the processing liquid from above the substrate 9 toward the central portion of the upper main surface of the substrate 9 (hereinafter referred to as “upper surface 91 ”). The first nozzle 51 and the second nozzle 52 are formed of, for example, a resin having high chemical resistance such as Teflon (registered trademark). In addition, the first nozzle 51 and the second nozzle 52 may respectively be part of a common nozzle.

The cover portion 4 is an annular member centered on the central axis J1. The cover portion 4 is arranged around the substrate 9 and the substrate holding portion 31 so as to cover the entire circumference of the substrate 9 and the substrate holding portion 31 , and covers the sides of the substrate 9 and the substrate holding portion 31 . The cover portion 4 is a liquid receiving container for receiving liquid such as a processing liquid scattered around from the rotating substrate 9 . The inner surface of the cover portion 4 is formed by, for example, a water-repellent material. The cover portion 4 is stationary in the circumferential direction regardless of whether the substrate 9 is rotating or stationary. A liquid discharge port (not shown) is provided at the bottom of the cover portion 4 for discharging the treatment liquid received by the cover portion 4 to the outside of the housing 11 . The cover part 4 is movable in the up and down direction between a processing position which is a position around the substrate 9 shown in FIG. The position is also on the lower side.

The cover portion 4 may also have a stacked structure different from the single-layer structure shown in FIG. 1 , in which a plurality of covers are stacked in the radial direction centering on the central axis J1 (hereinafter simply referred to as the "radial direction"). When the cover part 4 has a stacked structure, the plurality of covers are independently movable up and down, and the plurality of covers are switched according to the type of the processing liquid scattered from the substrate 9 to catch the processing liquid.

The gas supply unit 6 supplies gas to the substrate 9 . The gas supply unit 6 includes a third nozzle 63 . The third nozzle 63 supplies gas from below the substrate 9 toward the lower surface 92 of the substrate 9 . The third nozzle 63 is arranged inside the rotating shaft of the substrate rotating mechanism 33 , penetrates through the holding portion main body of the substrate holding portion 31 , and extends upward. The discharge port at the upper end of the third nozzle 63 faces the central portion of the lower surface 92 of the substrate 9 in the vertical direction.

FIG. 2 is a block diagram showing the processing liquid supply unit 5 and the gas supply unit 6 of the substrate processing apparatus 1 . Also in FIG. 2 , configurations other than the processing liquid supply unit 5 and the gas supply unit 6 are also shown together. The processing liquid supply unit 5 includes a chemical liquid supply unit 54 and a cleaning liquid supply unit 55 .

The cleaning liquid supply unit 55 includes a first nozzle 51 , a second nozzle 52 , and a mixing unit 545 . The first nozzle 51 is connected to a cleaning liquid supply source 551 through a pipe 552 . The second nozzle 52 is connected to a cleaning liquid supply source 551 via a pipe 542 , a mixing unit 545 , and a pipe 544 . The first nozzle 51 and the second nozzle 52 are respectively cleaning liquid ejection parts for ejecting the cleaning liquid sent from the cleaning liquid supply source 551 toward the upper surface 91 of the substrate 9 . As the cleaning liquid, for example, an aqueous treatment liquid such as DIW, carbonated water, ozone water, or hydrogen water is used. In addition, the cleaning liquid supply source 551 may also be included in the cleaning liquid supply part 55 .

The chemical solution supply unit 54 includes the second nozzle 52 and the mixing unit 545 . The second nozzle 52 is shared by the chemical solution supply unit 54 and the cleaning solution supply unit 55 . The second nozzle 52 is connected to the mixing unit 545 through the above-mentioned piping 542 . The mixing unit 545 is connected to a stock solution supply source 546 via a pipe 543 , and is connected to a cleaning liquid supply source 551 via the above-mentioned pipe 544 .

In the mixing unit 545 , the chemical solution stock solution (ie, solute) sent from the stock solution supply source 546 is dissolved in the cleaning solution (ie, solvent) sent from the cleaning solution supply source 551 to generate a drug solution. That is, the mixing unit 545 is a drug solution generating unit for dissolving the stock solution of the drug solution into the cleaning solution to generate the drug solution. The mixing unit 545 includes, for example, a static mixer for mixing the cleaning solution and the original chemical solution. The mixing unit 545 may also include other various liquid mixing devices. The chemical solution generated by the mixing unit 545 is supplied to the second nozzle 52 through the pipe 542 , and is sprayed from the second nozzle 52 toward the upper surface 91 of the substrate 9 . In addition, the solvent used to dissolve the stock solution of the drug solution does not necessarily need to be a cleaning solution, and may be a different type of liquid from the cleaning solution. In addition, in the example shown in FIG. 2 , although one stock solution supply source 546 is connected to the mixing unit 545 , a plurality of stock solution supply sources 546 may be connected to the mixing unit 545 to supply plural kinds of medicinal solutions to the mixing unit 545 . stock solution.

In the processing liquid supply part 5, the cleaning liquid is sent from the cleaning liquid supply source 551 to the mixing part 545 in the state where the supply of the chemical liquid stock solution from the stock solution supply source 546 is stopped. Spray out the washer fluid. The second nozzle 52 is a cleaning liquid ejection portion for ejecting a cleaning liquid toward the upper surface 91 of the substrate 9 , and is also a chemical liquid ejection portion for ejecting a chemical liquid toward the upper surface 91 of the substrate 9 . In addition, the stock solution supply source 546 may also be included in the chemical solution supply unit 54 .

The chemical solution and the cleaning solution supplied from the second nozzle 52 to the upper surface 91 of the substrate 9 are wound into the lower surface 92 via the periphery of the substrate 9 and supplied to the peripheral region 93 of the lower surface 92 (see FIG. 3 described later). The chemical solution is, for example, an etchant, and is used to etch and remove the portion formed on the peripheral region 93 of the thin film covering the entire lower surface 92 of the substrate 9 .

FIG. 3 shows a bottom view of the substrate 9 . In order to facilitate understanding of the drawings, in FIG. 3 , in the lower surface 92 of the substrate 9, the inner region 94 of the radially inner region of the peripheral region 93 is attached with parallel oblique lines, and the peripheral region 93 and the peripheral region 93 are shown by a chain line of two dots. The junction between inner regions 94 . The peripheral region 93 (that is, the inclined portion) is a substantially annular region centered on the central axis J1. The inner region 94 is a substantially circular region centered on the central axis J1. On the lower surface 92 of the substrate 9 , a structure (for example, a circuit pattern used in a product) is formed in advance in an inner region 94 , and the structure is a collection of a plurality of fine structure elements. This structure is not formed in the peripheral region 93 . In this embodiment, the diameter and thickness of the substrate 9 are 300 mm and 775 μm, respectively. The longitudinal section of the periphery of the substrate 9 is substantially arc-shaped, and the radius of the periphery of the substrate 9 is 300 μm. The radial width of the peripheral region 93 is substantially constant in the circumferential direction, for example, 2 mm to 3 mm.

In the case where the thin film on the lower surface 92 of the substrate 9 is a polysilicon (polysilicon) film, for example, a mixed solution of hydrofluoric acid (HF; hydrofluoric acid) and nitric acid (HNO ₃ ), concentrated hydrofluoric acid, Dilute hydrofluoric acid, ammonium hydroxide (NH ₄ OH), TMAH (tetramethyl ammonium hydroxide; tetramethylammonium hydroxide) or SC1 (Standard clean-1; the first standard cleaning solution) (that is, ammonia (NH ₃ ) Mixed aqueous solution with hydrogen peroxide (H ₂ O ₂ )). In the case where the thin film on the lower surface 92 of the substrate 9 is a film of titanium nitride (TiN), tantalum (Ta), titanium (Ti) or tungsten (W), SC2 (Standard clean-2 ; the second standard cleaning solution) (that is, the mixed aqueous solution of hydrogen chloride (HCl) and hydrogen peroxide) or FPM (hydrofluoric acid hydrogen peroxide mixture; hydrofluoric acid hydrogen peroxide water mixture) (that is, the mixture of hydrogen fluoride and hydrogen peroxide aqueous solution). In the case where the thin film on the lower surface 92 of the substrate 9 is a silicon oxide film (SiO ₂ ), for example, diluted hydrofluoric acid or FPM is used as the chemical solution.

As shown in FIG. 2 , the gas supply unit 6 includes a third nozzle 63 . The third nozzle 63 is connected to a gas supply source 65 via a pipe 64 . The third nozzle 63 is a gas ejection portion for ejecting the gas sent from the gas supply source 65 toward the central portion of the lower surface 92 of the substrate 9 . The gas sent from the gas supply source 65 is, for example, an inert gas such as nitrogen (N ₂ ) gas, or a dry gas. In addition, the gas supply source 65 may also be included in the gas supply unit 6 .

Next, the processing of the substrate 9 in the substrate processing apparatus 1 will be described with reference to FIG. 4 . In the substrate processing apparatus 1 , first, the substrate 9 on which the film is formed on almost the entire surface of the lower surface 92 is held in a horizontal state by the substrate holding unit 31 . Next, the rotation of the substrate 9 is started by the substrate rotation mechanism 33 (step S11 ). Next, the gas supply unit 6 is controlled by the supply control unit 72 , whereby the gas (for example, nitrogen gas) is ejected from the third nozzle 63 to the rotating substrate 9 . The gas from the third nozzle 63 is supplied to the central portion of the lower surface 92 of the substrate 9 and spreads radially outward along the lower surface 92 of the substrate 9 (step S12 ). Thereby, the flow of the gas described above is formed on the lower surface 92 of the substrate 9 over the entire circumferential direction from the central portion toward the outer direction in the radial direction.

Next, the cleaning liquid supply part 55 is controlled by the supply control part 72, whereby a predetermined flow rate (for example, 1000ml/min to 2000ml/min, also referred to as "first flow rate" in the following description) is supplied from the first nozzle 51. The cleaning solution is sprayed on the rotating substrate 9 . In this embodiment, DIW is used as the cleaning liquid. In addition, the rotation speed of the substrate 9 is, for example, 800 rpm. As shown in FIG. 5 , the cleaning solution 81 from the first nozzle 51 is supplied to the center of the upper surface 91 of the substrate 9 and spreads radially outward on the upper surface 91 of the substrate 9 by centrifugal force. The cleaning solution 81 that has reached the periphery of the substrate 9 is supplied to the periphery region 93 by winding in toward the lower surface 92 through the periphery of the substrate 9 . A liquid film of cleaning solution 81 is formed on substrate 9 , and the liquid film of cleaning solution 81 extends continuously from the central portion of upper surface 91 to peripheral region 93 of lower surface 92 . In addition, in FIG. 5, the thickness of the board|substrate 9 etc. is drawn larger than the magnitude|size of a radial direction. In addition, the radial width of the peripheral region 93 is drawn larger than it actually is. The same applies to FIGS. 6 and 7 to be described later.

The movement of the cleaning solution 81 that has been wound into the lower surface 92 of the substrate 9 toward the inner direction in the radial direction is stopped by the air flow 82 directed toward the outer direction in the radial direction. In the lower surface 92 of the substrate 9, an interface between the cleaning liquid 81 and the gas flow 82 (that is, the above-mentioned gas) is formed on the boundary between the peripheral region 93 and the inner region 94 (that is, the inner peripheral edge of the peripheral region 93). (hereinafter also referred to as "air-liquid interface 83") (step S13). The shape of the air-liquid interface 83 in plan view is substantially circular with the center axis J1 as the center. The cleaning liquid 81 is supplied to the substrate 9 at the first flow rate for a predetermined time (for example, five seconds), thereby stabilizing the radial position of the air-liquid interface 83 on the lower surface 92 of the substrate 9 .

When the formation of the gas-liquid interface 83 in step S13 is completed, the cleaning liquid supply part 55 is controlled by the supply control part 72, whereby approximately simultaneously with stopping the spraying of the cleaning liquid 81 from the first nozzle 51, the cleaning liquid 81 is sprayed from the second nozzle 52 with A predetermined flow rate (for example, 300ml/min to 800ml/min, also referred to as "the third flow rate" in the following description) smaller than the flow rate of the cleaning solution 81 in step S13 sprays the cleaning solution on the rotating substrate 9 81. In other words, the spraying of the cleaning liquid 81 from the first nozzle 51 is switched to the spraying of a small flow rate of the cleaning liquid 81 from the second nozzle 52 . As described above, the cleaning liquid 81 is supplied from the cleaning liquid supply source 551 to the second nozzle 52 via the mixing unit 545 . As described above, in this embodiment, DIW is used as the cleaning liquid 81 . In addition, the rotation speed of the board|substrate 9 is lowered so that it may become slightly slower (for example, 700 rpm) than step S13.

As shown in FIG. 6 , the cleaning solution 81 from the second nozzle 52 is supplied to the central portion of the upper surface 91 of the substrate 9 and flows into the liquid film of the cleaning solution 81 formed on the substrate 9 in step S13 (see FIG. 5), and spread outward in the radial direction on the upper surface 91 of the substrate 9 by centrifugal force. The cleaning solution 81 that has reached the periphery of the substrate 9 is wound into the lower surface 92 through the periphery of the substrate 9 and supplied to the periphery region 93 . The cleaning liquid 81 that has been wrapped around the lower surface 92 of the substrate 9 reaches the above-mentioned air-liquid interface 83 and contacts with the airflow 82 in the air-liquid interface 83 (step S14 ). In other words, in step S14 , the flow rate of cleaning liquid 81 supplied to upper surface 91 of substrate 9 is decreased while maintaining the radial position of air-liquid interface 83 .

In this substrate processing method, since the gas-liquid interface 83 is stably formed by a relatively large flow rate of the cleaning liquid 81 in step S13, the diameter of the gas-liquid interface 83 can be maintained even if the flow rate of the cleaning liquid 81 is reduced in step S14. The location of the direction. Next, the cleaning liquid is supplied from the second nozzle 52 to the substrate 9 for a predetermined time (for example, three seconds), whereby the gas-liquid flow can be made even in the state where the cleaning liquid 81 is supplied to the upper surface 91 of the substrate 9 at a relatively small flow rate. The radial position of the interface 83 is stable.

Next, the chemical solution supply unit 54 is controlled by the supply control unit 72 , whereby the chemical solution stock solution is sent from the stock solution supply source 546 to the mixing unit 545 . In the mixing unit 545 , the chemical solution stock solution is dissolved in the cleaning solution supplied from the cleaning solution supply source 551 to the mixing unit 545 , whereby the above-mentioned chemical solution is produced. The chemical solution is sprayed from the second nozzle 52 to the rotating substrate 9 . The flow rate of the cleaning liquid supplied from the cleaning liquid supply source 551 to the mixing unit 545 is, for example, the same as the flow rate of the cleaning liquid in step S14. In this case, the flow rate of the chemical solution supplied to the substrate 9 (hereinafter also referred to as "second flow rate") is the flow rate of the cleaning solution in step S14 and the flow rate of the chemical solution stock solution from the stock solution supply source 546. total. In addition, in the case where the flow rate of the stock solution of the chemical solution added to the cleaning liquid in the mixing unit 545 is much smaller than the above-mentioned flow rate of the cleaning liquid, the flow rate of the chemical solution supplied to the substrate 9 is substantially the same as the flow rate of the cleaning liquid in step S14. sexually the same. The rotational speed of the substrate 9 at the time of supplying the chemical solution is, for example, the same as in step S14.

As shown in FIG. 7, the chemical solution 84 from the second nozzle 52 is supplied to the central portion of the upper surface 91 of the substrate 9 and then flows into the liquid film of the cleaning solution 81 formed on the substrate 9 in step S14 (see FIG. 6), and spread outward in the radial direction on the upper surface 91 of the substrate 9 by centrifugal force. The chemical solution 84 that has reached the peripheral edge of the substrate 9 is wound toward the lower surface 92 via the peripheral edge of the substrate 9 and supplied to the peripheral region 93 . The chemical solution 84 that has wound around the lower surface 92 of the substrate 9 reaches the above-mentioned air-liquid interface 83 and contacts the gas flow 82 at the air-liquid interface 83 (step S15 ). In other words, in step S15 , the liquid films of cleaning solution 81 on upper surface 91 and lower surface 92 of substrate 9 are replaced with chemical solution 84 while maintaining the radial position of air-liquid interface 83 . Next, the chemical solution 84 is supplied to the substrate 9 for a predetermined period of time, whereby the peripheral region 93 is treated with the chemical solution (for example, etching treatment by an etching solution).

When the chemical solution processing is finished, the supply control unit 72 controls the chemical solution supply unit 54 and the cleaning solution supply unit 55 so that the spraying of the chemical solution from the first nozzle 51 to the first nozzle 51 during rotation is substantially simultaneously stopped. The substrate 9 is sprayed with cleaning solution. In other words, the discharge of the chemical liquid from the second nozzle 52 is switched to the discharge of the cleaning liquid from the first nozzle 51 . Thereby, the cleaning process of the upper surface 91 and the lower surface 92 of the board|substrate 9 is performed (step S16). When the cleaning process is finished, the supply of the cleaning solution is stopped, and the drying process of the substrate 9 is performed (step S17). During the drying process, the rotation speed of the substrate 9 is increased, and the processing liquid remaining on the substrate 9 is scattered radially outward from the edge of the substrate 9 by centrifugal force and removed from the substrate 9 . In steps S13 to S17 , processing fluids such as chemicals and cleaning fluids scattered radially outward from the substrate 9 are caught by the cover 4 and discharged to the outside of the housing 11 . The dried substrate 9 is carried out from the substrate processing apparatus 1 . In the substrate processing apparatus 1 , the above-described processes from step S11 to step S17 are sequentially performed on a plurality of substrates 9 .

As described above, in the substrate processing apparatus 1 illustrated in FIG. The chemical solution treatment of the peripheral region 93 of the surface 92 may also be performed in the reverse direction for the substrate 9 . Specifically, in the substrate processing apparatus 1 , the first nozzle 51 and the second nozzle 52 are arranged to face the lower surface 92 of the substrate 9 , and the third nozzle 63 is arranged to face the upper surface 91 of the substrate 9 . In addition, gas is supplied to the central portion of the lower surface 92 of the substrate 9 in step S12 , and a cleaning solution or chemical solution is supplied to the central portion of the upper surface 91 of the substrate 9 in steps S13 to S16 . Next, an air-liquid interface 83 is formed at the boundary between the peripheral region 93 and the inner region 94 of the upper surface 91 of the substrate 9 , and the peripheral region 93 of the upper surface 91 is treated with a chemical solution.

As described above, the above-mentioned substrate processing method includes the following steps: rotating the substrate 9 held in a horizontal state around the central axis J1 facing the up-down direction (step S11); 91 and the central portion of one of the main surfaces of the lower surface 92 (such as the lower surface 92), and supply the cleaning liquid to the central portion of the other main surface of the substrate 9 (such as the upper surface 91) at a first flow rate, and The cleaning liquid is wound into the peripheral region 93 of the main surface of the above-mentioned one side, thereby forming the gas-liquid interface 83 of the gas and the cleaning liquid on the main surface of the above-mentioned one side (step S13); The second flow rate with a smaller flow rate supplies the chemical solution to the central portion of the other main surface of the rotating substrate 9 and makes the chemical solution go around to the peripheral region 93 of the one main surface, whereby the chemical solution on the one main surface The chemical liquid is supplied on the surface up to the air-liquid interface 83, and the chemical liquid treatment of the peripheral region 93 is performed (step S15).

In this way, when the chemical solution is processed in the peripheral region 93, the flow rate of the chemical solution supplied to the substrate 9 is set to a relatively small flow rate (that is, the second flow rate), whereby the chemical solution scattered from the substrate 9 to the surrounding area can be suppressed. The portion 4 and the like are splashed back (that is, liquid is splashed) and attached to the substrate 9 and the like. In addition, before the chemical liquid treatment is performed on the peripheral region 93, a relatively large flow rate (that is, the first flow rate) of cleaning liquid is supplied to the substrate 9 in advance to form the gas-liquid interface 83 on the inner peripheral edge of the peripheral region 93, thereby even Even if the flow rate of the chemical solution is small, the chemical solution can reach the inner peripheral edge of the peripheral region 93 over the entire circumference and adhere to the entire peripheral region 93 . Therefore, it is possible to properly perform chemical treatment on the peripheral region 93 of the substrate 9 while suppressing splashing of the chemical solution. In addition, if the chemical solution of the second flow rate is supplied to the central portion of the upper surface 91 of the substrate 9 without forming the gas-liquid interface 83 in step S13, it is difficult for the chemical solution to reach the edge of the peripheral region 93 over the entire circumference. The inner periphery, and it is difficult to stably form the gas-liquid interface 83 on the inner periphery of the peripheral region 93 .

As mentioned above, it is preferable that the medicinal solution is a medicinal solution obtained by dissolving a solute (such as a stock solution of medicinal solution) in the cleaning solution. In this way, the chemical solution can be easily produced by using the cleaning solution used for processing the substrate 9 to generate the chemical solution. In addition, the structure of the processing liquid supply unit 5 in the substrate processing apparatus 1 described above can be simplified. Furthermore, since the solvent of the chemical solution is the same type of liquid as the liquid film of the cleaning solution formed on the substrate 9 in step S14, it is easy to replace the cleaning solution on the substrate 9 with the chemical solution in step S15. .

Preferably, the above-mentioned substrate processing method further includes the following process (step S14) between the above-mentioned step S13 and the above-mentioned step S15: the above-mentioned other flow rate of the rotating substrate 9 is subjected to the third flow rate smaller than the first flow rate. The central part of one main surface (such as the upper surface 91) supplies the cleaning liquid and makes the cleaning liquid flow into the peripheral region 93 of the one main surface (such as the lower surface 92), thereby supplying the cleaning liquid to the air-liquid interface 83 . Thereby, the liquid film of the cleaning liquid on the substrate 9 can be thinned. As a result, when the cleaning solution is replaced by the chemical solution in step S15, the mixture of the chemical solution and the cleaning solution can be prevented from splashing back on the cover portion 4 and the like and adhering to the substrate 9 and the like.

As mentioned above, preferably, the second flow rate of the medical solution in the above step S15 is generated by dissolving the solute into the above-mentioned third flow rate of the cleaning solution. Thereby, since it is not necessary to change the flow rate of the cleaning liquid when moving from step S14 to step S15, the processing of the substrate 9 can be simplified. In addition, the control of the chemical solution supply unit 54 by the supply control unit 72 can be simplified in the substrate processing apparatus 1 .

Preferably, in the above substrate processing method, the rotation speed of the substrate 9 is reduced between step S13 and step S15. This makes it possible to easily replace the cleaning solution on the substrate 9 with the chemical solution in step S15. In addition, splashing of the chemical solution can be further suppressed during the chemical solution treatment of the substrate 9 . As described above, in the case where the rotation speed of the substrate 9 is reduced between steps S13 and S14, the position in the radial direction of the air-liquid interface 83 can be easily maintained when a small flow rate of cleaning liquid is supplied in step S14. On the inner periphery of the peripheral region 93 . In addition, the reduction of the rotation speed of the board|substrate 9 may be performed in parallel with the start of step S15. Even in this case, as in the above description, the cleaning solution on the substrate 9 can be easily replaced with the chemical solution in step S15. In addition, splashing of the chemical solution can be further suppressed during the chemical solution treatment of the substrate 9 .

The substrate processing apparatus 1 described above includes a substrate holding unit 31 , a substrate rotating mechanism 33 , a gas supply unit 6 , a cleaning solution supply unit 55 , and a chemical solution supply unit 54 . The substrate holding portion 31 holds the substrate 9 in a horizontal state. The substrate rotation mechanism 33 rotates the substrate holding part 31 around the center axis J1 facing the up-down direction. The gas supply unit 6 supplies gas to the central portion of one main surface (for example, the lower surface 92 ) of the upper surface 91 and the lower surface 92 of the rotating substrate 9 . The cleaning liquid supply unit 55 supplies the cleaning liquid to the central portion of the other main surface (for example, the upper surface 91 ) of the rotating substrate 9 at a first flow rate, and makes the cleaning liquid flow into the peripheral region 93 of the one main surface. , thereby forming a gas-liquid interface 83 between the gas and the cleaning liquid on the one main surface. The chemical solution supply unit 54 supplies the chemical solution to the central portion of the above-mentioned other main surface of the rotating substrate 9 at the second flow rate smaller than the first flow rate, and makes the chemical solution wrap around the above-mentioned one main surface. In the peripheral region 93 , the chemical solution is supplied to the air-liquid interface 83 on the one main surface, and the chemical solution treatment in the peripheral region 93 is performed. Thereby, similarly to the above description, it is possible to appropriately perform chemical treatment on the peripheral region 93 of the substrate 9 while suppressing splashing of the chemical solution.

Various changes can be made in the above-described substrate processing method and substrate processing apparatus 1 .

For example, in step S15, the flow rate of the cleaning liquid supplied from the cleaning liquid supply source 551 to the mixing unit 545 does not necessarily have to be the same as the flow rate of the cleaning liquid in step S14, and may be appropriately changed.

It is not necessarily necessary to lower the rotation speed of the substrate 9 between steps S13 and S15. For example, the rotation speed of the substrate 9 in steps S13 to S15 may be the same.

It is not necessarily necessary to decrease the flow rate of the washing liquid in step S14, and step S14 may be omitted after step S13 is completed and step S15 may be performed.

In the substrate processing apparatus 1 , the chemical solution does not necessarily need to be generated in the mixing unit 545 , and the chemical solution may be sent to the second nozzle 52 from a chemical solution supply source for storing the previously generated chemical solution. In this case, the mixing part 545 may also be omitted.

In the substrate processing apparatus 1 , the spraying of the cleaning liquid in step S14 can also be performed through the first nozzle 51 . In addition, the spraying of cleaning liquid from step S13 to step S14 and the spraying of chemical liquid in step S15 can also be performed through the same nozzle.

The above-mentioned substrate processing apparatus 1 is not only used for processing semiconductor substrates, but also can be used for glass substrates used in flat panel displays such as liquid crystal display devices or organic EL (Electro Luminescence; electroluminescence) display devices. processing or processing of glass substrates used in other display devices. In addition, the above-mentioned substrate processing apparatus 1 can also be used for processing substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

The configurations in the above-described embodiments and respective modifications may be appropriately combined as long as they do not conflict with each other.

While the invention has been drawn and described in detail, the foregoing description is illustrative and not restrictive. Therefore, various changes and aspects are possible as long as they do not depart from the scope of the present invention.

1: Substrate processing device 4: cover part 5: Treatment liquid supply part 6: Gas supply part 7: Control Department 9: Substrate (semiconductor substrate) 11: Housing 12: Airflow forming part 31: Substrate holding part 33: Substrate rotation mechanism 51: The first nozzle 52: Second nozzle 54: Liquid medicine supply department 55:Cleaning solution supply part 63: The third nozzle 64,542,543,544,552: Piping 65: Gas supply source 71: memory department 72:Supply Control Department 81: cleaning fluid 82: Airflow 83: Gas-liquid interface 84: liquid medicine 91: upper surface 92: lower surface 93: Peripheral area 94: Inner area 545: mixed department 546: Original liquid supply source 551: Cleaning fluid supply source J1: central axis

[FIG. 1] It is a side view which shows the structure of the substrate processing apparatus of an embodiment. [ Fig. 2 ] is a block diagram showing a processing liquid supply unit and a gas supply unit. [Fig. 3] is a bottom view showing the substrate. [ Fig. 4] Fig. 4 is a diagram showing an example of a flow of processing a substrate. [ Fig. 5 ] is a cross-sectional view showing a part of the substrate. [ Fig. 6 ] is a cross-sectional view showing a part of the substrate. [ Fig. 7 ] is a cross-sectional view showing a part of the substrate.

Claims (8)

A substrate processing method comprising: a step (a) of rotating a substrate held in a horizontal state around a central axis facing the up-down direction; and a step (b) of rotating the upper surface and lower surface of the rotating substrate. supplying gas to the central portion of one of the main surfaces of the surfaces, and supplying the cleaning liquid to the central portion of the other main surface of the aforementioned substrate at a first flow rate, and causing the cleaning liquid to flow into the peripheral region of the aforementioned one main surface, Thereby, a gas-liquid interface between the aforementioned gas and the aforementioned cleaning liquid is formed on the main surface of the aforementioned one side; the process (c) is continuous to the aforementioned process (b) and rotates with a second flow rate that is smaller than the aforementioned first flow rate. The chemical solution is supplied to the central portion of the other main surface of the substrate and the chemical solution is wound into the peripheral region of the one main surface, whereby the chemical solution is supplied on the one main surface to reach The aforementioned gas-liquid interface is treated with the chemical solution in the aforementioned peripheral area; the aforementioned chemical solution is a chemical solution obtained by dissolving the solute into the aforementioned cleaning solution. A substrate processing method comprising: a step (a) of rotating a substrate held in a horizontal state around a central axis facing the up-down direction; and a step (b) of rotating the upper surface and lower surface of the rotating substrate. supplying gas to the central portion of one of the main surfaces of the surfaces, and supplying the cleaning liquid to the central portion of the other main surface of the aforementioned substrate at a first flow rate, and causing the cleaning liquid to flow into the peripheral region of the aforementioned one main surface, In this way, a gas-liquid interface between the gas and the cleaning liquid is formed on the main surface of the one side; the step (c) is to continue to supply the cleaning liquid to the other main surface of the substrate and maintain the gas-liquid interface. In the state of the position in the radial direction of the interface, the flow rate is smaller than the aforementioned first flow rate. The amount of the second flow rate supplies the chemical solution to the central portion of the other main surface of the rotating substrate and causes the chemical solution to wrap around the peripheral edge region of the one main surface, whereby the chemical solution is sprayed on the one main surface. supplying the above-mentioned liquid medicine up to the above-mentioned gas-liquid interface and replacing the liquid film of the above-mentioned cleaning liquid with the liquid film of the above-mentioned liquid medicine and performing the liquid treatment of the above-mentioned peripheral area; the process (d) is in the process of the above-mentioned process (b) and During the step (c), the cleaning liquid is supplied to the central portion of the other main surface of the rotating substrate with a third flow rate smaller than the first flow rate, and the cleaning liquid is drawn into the The peripheral region of the one main surface supplies the cleaning liquid up to the air-liquid interface. A substrate processing method comprising: a step (a) of rotating a substrate held in a horizontal state around a central axis facing the up-down direction; and a step (b) of rotating the upper surface and lower surface of the rotating substrate. supplying gas to the central portion of one of the main surfaces of the surfaces, and supplying the cleaning liquid to the central portion of the other main surface of the aforementioned substrate at a first flow rate, and causing the cleaning liquid to flow into the peripheral region of the aforementioned one main surface, In this way, a gas-liquid interface between the gas and the cleaning liquid is formed on the main surface of the one side; the step (c) is to continue to supply the cleaning liquid to the other main surface of the substrate and maintain the gas-liquid interface. In the state of the position in the radial direction of the interface, the chemical solution is supplied to the center portion of the other main surface of the rotating substrate at a second flow rate smaller than the first flow rate, and the chemical solution is wound into the center portion of the other main surface of the rotating substrate. In the peripheral region of the one main surface, the chemical solution is supplied on the one main surface up to the air-liquid interface and the liquid film of the washing liquid is replaced by the liquid film of the chemical solution and the peripheral region is liquid medicine treatment; The rotation speed of the substrate is reduced between the step (b) and the step (c), or the rotation speed of the substrate is reduced in parallel with the start of the step (c). The substrate processing method as described in claim 2 or 3, wherein the chemical solution is a chemical solution obtained by dissolving solutes in the cleaning solution. The substrate processing method as described in claim 2, wherein the second flow rate of the chemical solution in the step (c) is produced by dissolving the solute into the third flow rate of the cleaning solution. A substrate processing apparatus comprising: a substrate holding unit that holds a substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit around a central axis facing an up-down direction; and a gas supply unit that controls the rotating substrate. Gas is supplied to the central part of one of the main surfaces of the upper surface and the lower surface; the cleaning liquid supply part is to supply the cleaning liquid to the central part of the other main surface of the rotating aforementioned substrate with a first flow rate, and to make the cleaning The liquid is wound into the peripheral region of the main surface of the one side, thereby forming a gas-liquid interface between the gas and the cleaning liquid on the main surface of the one side; and the liquid medicine supply part is continuous to the other side of the substrate. The supply place of the cleaning solution on the main surface of the main surface supplies the chemical solution to the central part of the other main surface of the rotating substrate with a second flow rate smaller than the first flow rate, and the chemical solution is wound into the center portion of the other main surface of the rotating substrate. The aforementioned peripheral area of the one main surface is such that the aforementioned chemical solution is supplied to the aforementioned gas-liquid interface on the aforementioned one main surface, and the chemical solution treatment of the aforementioned peripheral area is performed; the aforementioned chemical solution supply unit includes: and a part for dissolving the solute into the cleaning solution of the third flow rate, thereby generating the medical solution of the second flow rate. A substrate processing apparatus comprising: a substrate holding unit that holds a substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit around a central axis facing an up-down direction; and a gas supply unit that controls the rotating substrate. Gas is supplied to the central part of one of the main surfaces of the upper surface and the lower surface; the cleaning liquid supply part is to supply the cleaning liquid to the central part of the other main surface of the rotating aforementioned substrate with a first flow rate, and to make the cleaning The liquid is wound into the peripheral region of the one main surface, thereby forming a gas-liquid interface between the gas and the cleaning liquid on the one main surface; and the liquid medicine supply part is connected to the other side of the substrate The second flow rate smaller than the first flow rate is applied to the other main surface of the rotating substrate while the supply of the cleaning liquid on the main surface is maintained and the position in the radial direction of the air-liquid interface is maintained. The central part supplies the liquid medicine and makes the liquid medicine wrap around to the peripheral edge region of the one main surface, thereby supplying the liquid medicine on the one main surface to reach the air-liquid interface and dissipating the liquid of the cleaning liquid. The membrane is replaced with the liquid film of the chemical solution and the chemical solution treatment of the peripheral region is performed; between the supply of the cleaning solution at the first flow rate by the cleaning solution supply part and the supply of the chemical solution by the chemical solution supply part, the cleaning solution The supply unit supplies the cleaning solution to the central portion of the other main surface of the rotating substrate with a third flow rate smaller than the first flow rate, and makes the cleaning solution wrap around the one main surface. The aforementioned peripheral area, thereby supplying the aforementioned cleaning liquid to the aforementioned air-liquid interface. The substrate processing apparatus as set forth in claim 7, wherein the chemical solution supply unit includes a chemical solution generating unit that dissolves a solute into the cleaning solution at the third flow rate, thereby generating the chemical solution at the second flow rate .

Images