JP2003082301A - Adhesive tape and semiconductor device - Google Patents
Adhesive tape and semiconductor deviceInfo
- Publication number
- JP2003082301A JP2003082301A JP2001274172A JP2001274172A JP2003082301A JP 2003082301 A JP2003082301 A JP 2003082301A JP 2001274172 A JP2001274172 A JP 2001274172A JP 2001274172 A JP2001274172 A JP 2001274172A JP 2003082301 A JP2003082301 A JP 2003082301A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive tape
- liquid crystal
- adhesive
- crystal polymer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
Landscapes
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、接着テープ及びそ
れを用いた半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive tape and a semiconductor device using the same.
【０００２】[0002]
【従来の技術】従来、半導体装置の分野では、絶縁接着
テープとしては、耐熱性が高く、熱可塑性を持たないポ
リイミドフィルムを基材とし、その表面に接着層として
熱可塑性ポリイミド（特開平８−１１３７６５号公報、
特開平７−２３５６２６号公報）やポリエーテルアミド
イミド（特開平２−３６５４２号公報）等の熱可塑性樹
脂層を設けたものが用いられている。しかし、このよう
なポリイミドフィルムを基材とするものは、その基材が
吸水性に富み、このことがその大きな欠点になってい
る。例えば、ポリイミドフィルムを基材とする絶縁接着
テープを用いて半導体パッケージを作製し、これをハン
ダリフロー等で高温に加熱したときに、そのテープに吸
収されていた水分が気化膨張し、これによりパッケージ
にクラックが生じるという問題がある。2. Description of the Related Art Conventionally, in the field of semiconductor devices, as an insulating adhesive tape, a polyimide film having high heat resistance and no thermoplasticity is used as a base material, and a thermoplastic polyimide film is used as an adhesive layer on the surface of the polyimide film. No. 113765,
Those provided with a thermoplastic resin layer such as JP-A-7-235626) or polyether amide imide (JP-A-2-36542) are used. However, in the case of using such a polyimide film as a base material, the base material is rich in water absorption, which is a major drawback. For example, when a semiconductor package is manufactured using an insulating adhesive tape having a polyimide film as a base material and heated to a high temperature by solder reflow or the like, the moisture absorbed in the tape evaporates and expands, which results in the package. There is a problem that cracks occur in the.
【０００３】特開平１１−３４５９２８号公報には、熱
溶融型高分子量液晶ポリマーフィルムを基材とし、その
片面又は両面に低分子量液晶ポリマー層を形成した絶縁
接着テープが開示されている。この絶縁接着テープの場
合、吸水性の低いものであることから、前記ポリイミド
フィルムを基材とする絶縁接着テープに見られたような
問題を生じることはないが、以下に示すような新しい問
題を生じた。
（１）液晶ポリマーは温度の上昇に対して粘度が急激に
低下してしまうため、低分子量液晶ポリマーを用いた場
合でも、接着可能温度の範囲が非常に狭く、加工が極め
て難しい。
（２）低分子量液晶ポリマーは溶融時の張力が著しく低
いため、フィルム化が非常に困難である。従って、絶縁
層フィルムと接着層フィルムとを予め作製した後に張り
合わせることは不可能である。よって、多層フィルムを
作製するためには、基材フィルム上に、押し出しコーテ
ィングにより接着層を形成する必要があるが、このよう
な製法では２５μｍ以下の薄さで接着層を形成すること
は事実上不可能であり、トータルの厚みが１００μｍに
満たないものが主流である接着テープには適さない。Japanese Unexamined Patent Publication (Kokai) No. 11-345928 discloses an insulating adhesive tape in which a heat-melting type high molecular weight liquid crystal polymer film is used as a base material and a low molecular weight liquid crystal polymer layer is formed on one side or both sides thereof. In the case of this insulating adhesive tape, since it has low water absorption, it does not cause the problems as seen in the insulating adhesive tape using the polyimide film as a base material, but has the following new problems. occured. (1) Since the viscosity of a liquid crystal polymer sharply decreases with an increase in temperature, even when a low molecular weight liquid crystal polymer is used, the temperature range in which adhesion is possible is extremely narrow and processing is extremely difficult. (2) Since the low molecular weight liquid crystal polymer has a remarkably low tension when melted, it is very difficult to form a film. Therefore, it is impossible to bond the insulating layer film and the adhesive layer film in advance and then bond them together. Therefore, in order to produce a multilayer film, it is necessary to form an adhesive layer on a substrate film by extrusion coating, but in such a manufacturing method, it is practically possible to form an adhesive layer with a thickness of 25 μm or less. It is impossible, and it is not suitable for an adhesive tape whose total thickness is less than 100 μm.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、吸水率が低
く且つ接着加工温度が広く、さらに、薄厚製品の製造が
容易な接着テープ及び該テープを用いて形成された半導
体装置を提供することをその課題とする。DISCLOSURE OF THE INVENTION The present invention provides an adhesive tape having a low water absorption rate, a wide bonding processing temperature, and easy manufacturing of thin products, and a semiconductor device formed using the tape. Is the task.
【０００５】[0005]
【課題を解決するための手段】本発明者らは、前記課題
を解決すべく鋭意検討を重ねた結果、本発明を完成する
に至った。即ち、本発明によれば、以下に示す接着テー
プ及び半導体パッケージが提供される。
（１）液晶ポリマーフィルムの片面又は両面に、吸水率
が０〜０．１％で且つ融点が１５０〜３４５℃である接
着剤層が形成されていることを特徴とする接着テープ。
（２）該接着剤層が、フッ素樹脂からなることを特徴と
する前記（１）に記載の接着テープ。
（３）該フッ素樹脂が、テトラフルオロエチレン／ヘキ
サフルオロプロピレン共重合体、テトラフルオロエチレ
ン／パーフルオロアルキルビニルエーテル共重合体、テ
トラフルオロエチレン／エチレン共重合体、ポリクロロ
トリフルオロエチレン、ポリフッ化ビニリデン又はポリ
フッ化ビニルであることを特徴とする前記（２）に記載
の接着テープ。
（４）該液晶ポリマーフィルムの厚みが、１０〜９０μ
ｍであることを特徴とする前記（１）〜（３）のいずれ
かに記載の接着テープ。
（５）該接着材層の厚みが、３〜２５μｍであることを
特徴とする前記（１）〜（４）のいずれかに記載の接着
テープ。
（６）該液晶ポリマーフィルムの厚みに対する該接着材
層の厚みの比が、０．０５〜１．５であることを特徴と
する前記（１）〜（５）のいずれかに記載の接着テー
プ。
（７）該液晶ポリマーフィルムの表面が、プラズマ処理
又は紫外線処理により表面処理されていることを特徴と
する前記（１）〜（６）のいずれかに記載の接着テー
プ。
（８）前記（１）〜（７）のいずれかに記載の接着テー
プからなることを特徴とする半導体装置用絶縁接着テー
プ。
（９）半導体チップと金属製導電性材料との間の絶縁接
着及び／又は金属製導電性材料同志間の絶縁接着を絶縁
接着テープを介してなる半導体装置において、該絶縁接
着テープとして、前記（８）に記載の接着テープを用い
ることを特徴とする半導体装置。
（１０）封止樹脂で密閉されていることを特徴とする前
記（９）に記載の半導体装置。The present inventors have completed the present invention as a result of intensive studies to solve the above problems. That is, according to the present invention, the following adhesive tape and semiconductor package are provided. (1) An adhesive tape characterized in that an adhesive layer having a water absorption of 0 to 0.1% and a melting point of 150 to 345 ° C. is formed on one side or both sides of a liquid crystal polymer film. (2) The adhesive tape as described in (1) above, wherein the adhesive layer is made of a fluororesin. (3) The fluororesin is a tetrafluoroethylene / hexafluoropropylene copolymer, a tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer, a tetrafluoroethylene / ethylene copolymer, polychlorotrifluoroethylene, polyvinylidene fluoride or The adhesive tape according to (2) above, which is polyvinyl fluoride. (4) The thickness of the liquid crystal polymer film is 10 to 90 μm.
It is m, The adhesive tape in any one of said (1)-(3) characterized by the above-mentioned. (5) The adhesive tape according to any one of (1) to (4), wherein the adhesive layer has a thickness of 3 to 25 μm. (6) The adhesive tape according to any one of (1) to (5) above, wherein the ratio of the thickness of the adhesive layer to the thickness of the liquid crystal polymer film is 0.05 to 1.5. . (7) The adhesive tape according to any one of (1) to (6), wherein the surface of the liquid crystal polymer film is surface-treated by plasma treatment or ultraviolet treatment. (8) An insulating adhesive tape for semiconductor device, comprising the adhesive tape according to any one of (1) to (7). (9) In a semiconductor device having insulating adhesive tape between a semiconductor chip and a metal conductive material and / or insulating adhesive between metal conductive materials, an insulating adhesive tape is used. A semiconductor device using the adhesive tape according to 8). (10) The semiconductor device according to (9), which is sealed with a sealing resin.
【０００６】[0006]
【発明の実施の形態】本発明で用いる基材フィルムは、
熱溶融型液晶ポリマーであり、芳香族系ポリエステル構
造を有する。その融点は、２３０〜３８０℃、好ましく
は２５０〜３５０℃である。このような液晶ポリマーに
は、従来公知のクランクシャフトユニットを持ったII型
やベントユニットを有するか又は直線構造を有したＩ型
の液晶ポリマーが包含される。液晶ポリマーフィルムに
おいて、その融点が前記範囲より低くなると、半田リフ
ローの熱に耐えられなくなり、一方、前記範囲より高く
なると、押出し成形が難かしくなり、シート化に適さな
くなる。そのフィルムの分子配向は、２軸配向が好まし
く、そのＭＤ／ＴＤの強度比が１／３〜３／１の間にあ
るものが好ましく、１／２〜２／１の間にあるものがよ
り好ましい。前記強度比が前記範囲に入らないものは、
引き裂けやすい上に、その線膨張係数（ＣＴＥ）の異方
性が強くなるため、接着テープの加工性、信頼性が低下
してしまう。BEST MODE FOR CARRYING OUT THE INVENTION The base film used in the present invention is
It is a hot-melt liquid crystal polymer and has an aromatic polyester structure. Its melting point is 230-380 ° C, preferably 250-350 ° C. Such liquid crystal polymers include conventionally known type II liquid crystal polymers having a crankshaft unit and type I liquid crystal polymers having a vent unit or having a linear structure. When the melting point of the liquid crystal polymer film is lower than the above range, it cannot withstand the heat of solder reflow. On the other hand, when it is higher than the above range, extrusion molding becomes difficult and it becomes unsuitable for sheet formation. The molecular orientation of the film is preferably biaxial orientation, the MD / TD strength ratio is preferably between 1/3 and 3/1, and more preferably between 1/2 and 2/1. preferable. If the intensity ratio does not fall within the range,
In addition to being easy to tear, the anisotropy of the coefficient of linear expansion (CTE) becomes strong, so that the workability and reliability of the adhesive tape are deteriorated.
【０００７】本発明で用いる接着剤ポリマーは、融点が
１５０〜３４５℃、好ましくは１８０〜３１０℃、２３
℃で２４時間水中に浸漬後の吸水率が０．１％以下、好
ましくは０．０５％以下で、且つ３５０℃での質量減少
率が１％以下、好ましくは０．５％以下のポリマーであ
る。吸水率は低ければ低いほどよい。質量減少率は、Ｔ
Ａ Ｉｎｓｔｕｒｕｍｅｎｔｓ社製のＴＧＡ（ＴＧＡ２
９５０）を用いて、下記条件にてもとめる。
サンプル前処理：クリーンオーブン（２００℃、１ｈ
ｒ）中に静置。
サンプル量：２５±２ｍｇ
熱処理：３０℃で２０ｍｉｎ保持した後、５０℃／ｍｉ
ｎで昇温し、３５０℃に達した後、３５０℃で８０ｍｉ
ｎ保持。
熱処理時雰囲気：窒素ガス（１００ｍｌ／ｍｉｎ）
測定方法：熱処理前後のサンプル質量を測定し、次式に
よりもとめる。The adhesive polymer used in the present invention has a melting point of 150 to 345 ° C., preferably 180 to 310 ° C., 23.
A polymer having a water absorption rate of 0.1% or less, preferably 0.05% or less, and a mass reduction rate at 350 ° C of 1% or less, preferably 0.5% or less after being immersed in water at 24 ° C for 24 hours. is there. The lower the water absorption, the better. The mass reduction rate is T
A TGA (TGA2 manufactured by A Instruments)
950), and the following conditions are satisfied. Sample pretreatment: Clean oven (200 ° C, 1h
Place in r). Sample amount: 25 ± 2 mg Heat treatment: After holding at 30 ° C. for 20 minutes, 50 ° C./mi
The temperature was raised at n and reached 350 ° C, then at 350 ° C for 80 mi
n hold. At the time of heat treatment: Nitrogen gas (100 ml / min) Measuring method: The mass of the sample before and after the heat treatment is measured and calculated by the following formula.
【数１】
このようなポリマーには、従来公知のもの、例えば、テ
トラフルオロエチレン／ヘキサフルオロプロピレン共重
合体（ＦＥＰ）、テトラフルオロエチレン／パーフルオ
ロアルキルビニルエーテル共重合体（ＰＦＡ）、テトラ
フルオロエチレン／エチレン共重合体（ＥＴＦＥ）、ポ
リクロロトリフルオロエチレン（ＰＣＴＦＥ）、ポリフ
ッ化ビニリデン（ＰＶＤＦ）、ポリフッ化ビニル等のフ
ッ素系樹脂が包含される。本発明では、特に、テトラフ
ルオロエチレン／ヘキサフルオロプロピレン共重合体
（ＦＥＰ）、テトラフルオロエチレン／パーフルオロア
ルキルビニルエーテル共重合体（ＰＦＡ）、テトラフル
オロエチレン／エチレン共重合体（ＥＴＦＥ）等の４フ
ッ化エチレンを主体としたものがより好ましい。[Equation 1] Such polymers include those known in the art, such as tetrafluoroethylene / hexafluoropropylene copolymer (FEP), tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene / ethylene copolymer. Fluorine-based resins such as polymer (ETFE), polychlorotrifluoroethylene (PCTFE), polyvinylidene fluoride (PVDF) and polyvinyl fluoride are included. In the present invention, in particular, tetrafluoroethylene / hexafluoropropylene copolymer (FEP), tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene / ethylene copolymer (ETFE), etc. It is more preferable to use ethylene oxide as a main component.
【０００８】本発明において用いる接着剤ポリマーは、
融点によって液晶ポリマーと関係づけるのが好ましく、
本発明の場合、使用する接着剤ポリマーは、液晶ポリマ
ーの融点よりも１０〜１８０℃程度低い、好ましくは２
０〜１５０℃程度低い融点を有するものを選定するのが
よい。融点が前記範囲よりも低いと、ハンダリフロー時
の熱で簡単に溶融して接着が損なわれる。一方、融点が
前記範囲よりも高いと融着加工が難しく、接着テープを
融着する際に、基材が変形して接着性と絶縁性の低下を
引き起こす。The adhesive polymer used in the present invention is
It is preferable to associate with the liquid crystal polymer by the melting point,
In the case of the present invention, the adhesive polymer used is lower than the melting point of the liquid crystal polymer by about 10 to 180 ° C., preferably 2
It is preferable to select a material having a melting point as low as 0 to 150 ° C. When the melting point is lower than the above range, heat during solder reflow easily melts and the adhesion is impaired. On the other hand, when the melting point is higher than the above range, the fusion processing is difficult, and when the adhesive tape is fused, the base material is deformed and the adhesiveness and the insulation are deteriorated.
【０００９】本発明の接着テープは、液晶ポリマーフィ
ルムの片面又は両面に対して、接着剤ポリマーフィルム
を熱圧着することにより好ましく製造することができ
る。液晶ポリマーフィルムの厚さは、１０〜９０μｍ、
好ましくは２０〜７５μｍである。一方、接着剤ポリマ
ーフィルムの厚さは、３〜２５μｍ、好ましくは５〜２
０μｍである。液晶ポリマーフィルムの厚さに対する接
着剤ポリマーフィルム（接着剤層）の厚さの比（接着剤
層の厚み／液晶ポリマーフィルムの厚み）は、０．０５
〜１．５、好ましくは０．２〜１である。前記厚さの比
が０．０５以下では、接着加工する場合に接着性が不十
分となり、１．５を超えるとＣＴＥが、チップや４２ア
ロイ、銅等の被接着材料のＣＴＥと比較して大きくなり
すぎ、熱膨張差による材料変形が発生し易くなり、半導
体装置の信頼性が低下してしまう。熱圧着温度は、接着
剤ポリマーの溶点以上で液晶ポリマーの融点より低い温
度である。例えば、接着剤ポリマーがＦＥＰの場合、２
５０〜３３０℃、好ましくは２７０〜３１０℃、ＰＦＡ
の場合、２６０〜３４０℃、好ましくは２８０〜３２０
℃である。熱圧着圧力は、十分な接着強度が得られる条
件であればよく、特に限定されるものではないが、一般
に０．５〜４．５ＭＰａ、好ましくは１．５〜３．５Ｍ
Ｐａ程度である。熱圧着法としては、加熱ロール間や加
熱ベルト間で加圧する方法等を採用することができる。The adhesive tape of the present invention can be preferably produced by thermocompression bonding an adhesive polymer film to one side or both sides of a liquid crystal polymer film. The thickness of the liquid crystal polymer film is 10 to 90 μm,
It is preferably 20 to 75 μm. On the other hand, the thickness of the adhesive polymer film is 3 to 25 μm, preferably 5 to 2
It is 0 μm. The ratio of the thickness of the adhesive polymer film (adhesive layer) to the thickness of the liquid crystal polymer film (adhesive layer thickness / liquid crystal polymer film thickness) was 0.05.
Is about 1.5, preferably 0.2 to 1. When the thickness ratio is 0.05 or less, the adhesiveness becomes insufficient when the adhesive processing is performed, and when it exceeds 1.5, the CTE is higher than that of the adherend material such as a chip, 42 alloy, or copper. If it becomes too large, material deformation due to the difference in thermal expansion easily occurs, and the reliability of the semiconductor device deteriorates. The thermocompression bonding temperature is a temperature above the melting point of the adhesive polymer and below the melting point of the liquid crystal polymer. For example, if the adhesive polymer is FEP, 2
50-330 ° C, preferably 270-310 ° C, PFA
In the case of, 260-340 ° C., preferably 280-320
℃. The thermocompression bonding pressure is not particularly limited as long as sufficient adhesive strength can be obtained, but generally 0.5 to 4.5 MPa, preferably 1.5 to 3.5 M.
It is about Pa. As the thermocompression bonding method, a method of applying pressure between heating rolls or between heating belts can be adopted.
【００１０】本発明の接着テープは、前記熱圧着法の
他、液晶ポリマーフィルム上に、接着剤ポリマー溶液を
塗布乾燥することによっても製造することが可能であ
る。The adhesive tape of the present invention can be produced by applying the adhesive polymer solution on the liquid crystal polymer film and drying it, in addition to the thermocompression method.
【００１１】本発明でテープ基材として用いる液晶ポリ
マーフィルムは、その接着性向上のための表面処理を施
すのが好ましい。このような表面処理としては、従来公
知の各種のもの、例えば、コロナ放電処理、クロム酸処
理、紫外線（ＵＶ）処理、アルカリ処理、フレーム処理
等が挙げられる。本発明では、特に、プラズマ処理や紫
外線処理を好ましく用いることができる。プラズマ処理
は、酸素、アルゴン、ネオン、窒素、水素ガス等の雰囲
気中で行うのが好ましい。紫外線処理は、低圧水銀灯又
はエキシマランプを用いることが好ましい。また、紫外
線の波長は３０８ｎｍ以下、好ましくは２４５ｎｍ以下
の波長を含むものが好ましい。The liquid crystal polymer film used as the tape substrate in the present invention is preferably subjected to a surface treatment for improving its adhesiveness. Examples of such surface treatment include conventionally known various treatments such as corona discharge treatment, chromic acid treatment, ultraviolet (UV) treatment, alkali treatment, and flame treatment. In the present invention, plasma treatment or ultraviolet treatment can be preferably used. The plasma treatment is preferably performed in an atmosphere of oxygen, argon, neon, nitrogen, hydrogen gas or the like. For the ultraviolet treatment, it is preferable to use a low pressure mercury lamp or an excimer lamp. Further, it is preferable that the wavelength of ultraviolet rays includes a wavelength of 308 nm or less, preferably 245 nm or less.
【００１２】本発明の接着テープは、半導体装置（パッ
ケージ）用絶縁接着テープとして有利に用いることがで
きる。半導体装置においては、半導体チップと金属製導
電性材料との間の絶縁接着や、金属製導電性材料同志の
絶縁接着が行なわれている。このような絶縁接着の具体
例としては、例えば、ＬＯＣ（リード・オン・チップ）
のように、半導体チップ上へのリードの固定化や、ヒー
トシンク付きの半導体パッケージのように、リードへの
ヒートシンク（熱放散のための金属板）の固定化等が挙
げられる。これらの絶縁接着には、絶縁接着テープが用
いられているが、本発明の接着テープは、このような半
導体装置用の絶縁接着テープとして有利に適用される。The adhesive tape of the present invention can be advantageously used as an insulating adhesive tape for a semiconductor device (package). In a semiconductor device, insulation bonding between a semiconductor chip and a metal conductive material or insulation bonding between metal conductive materials is performed. A specific example of such insulating bonding is, for example, LOC (lead-on-chip).
As described above, fixing the leads on the semiconductor chip, fixing a heat sink (metal plate for heat dissipation) to the leads, such as a semiconductor package with a heat sink, can be mentioned. An insulating adhesive tape is used for these insulating bonds, but the adhesive tape of the present invention is advantageously applied as such an insulating adhesive tape for a semiconductor device.
【００１３】前記半導体装置は、通常、封止材料で密閉
される。この場合、封止材料としては、Ｔｇが高く、高
温域での弾性率低下が少なく、ＣＴＥがチップや４２ア
ロイ、銅等の値（５〜１６ｐｐｍ／℃）に近いものであ
れば適宜用いられるが、ビフェニル型エポキシ樹脂、ク
レゾールノボラック型エポキシ樹脂、ビスフェノール型
エポキシ樹脂、ナフタレン型エポキシ樹脂、ジシクロペ
ンタジエン型エポキシ樹脂等の熱硬化性樹脂や、これら
の樹脂に無機のフィラーを混合したもの等が好ましく用
いられる。本発明の絶縁接着テープを用いて作製された
半導体装置の樹脂封止物は、そのテープの吸水率が低い
ために、半田リフローにおいて高温に加熱された場合で
も、水蒸気の急激な発生がないことから、その半導体パ
ッケージにクラックが生じるようなことはない。本発明
の接着テープは、吸水率が低く、その２３℃で２４時間
水中に浸漬後の吸水率は、０．１％以下と極めて低いも
のである。本発明の接着テープは、接着加工温度が広
く、その加工温度幅は、５０〜２５０℃、好ましくは１
００〜１８０℃の範囲である。本発明のテープにおい
て、その厚さは１５〜１４０μｍ、好ましくは２５〜１
００μｍである。そのＣＴＥ（５０〜１００℃）は小さ
く、通常、５〜４５、好ましくは１０〜３５である。The semiconductor device is usually sealed with a sealing material. In this case, as the sealing material, a material having a high Tg, a small decrease in elastic modulus in a high temperature range, and a CTE close to a value of a chip, 42 alloy, copper or the like (5 to 16 ppm / ° C.) is appropriately used. However, there are thermosetting resins such as biphenyl type epoxy resin, cresol novolac type epoxy resin, bisphenol type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, and those in which inorganic filler is mixed with these resins. It is preferably used. The resin-encapsulated product of a semiconductor device produced using the insulating adhesive tape of the present invention has a low water absorption rate of the tape, and therefore, even when heated to a high temperature in solder reflow, steam does not suddenly occur. Therefore, the semiconductor package is not cracked. The adhesive tape of the present invention has a low water absorption rate, and its water absorption rate after being immersed in water at 23 ° C. for 24 hours is as low as 0.1% or less. The adhesive tape of the present invention has a wide bonding processing temperature, and the processing temperature range is 50 to 250 ° C., preferably 1
It is in the range of 00 to 180 ° C. In the tape of the present invention, the thickness is 15 to 140 μm, preferably 25 to 1
It is 00 μm. Its CTE (50 to 100 ° C.) is small, usually 5 to 45, preferably 10 to 35.
【００１４】本発明の接着テープ及び半導体装置を図面
を参照しながら説明する。図１は、本発明の接着テープ
の１例についての説明断面図を示す。図１の例では、液
晶ポリマーフィルム１ａの両面に接着剤ポリマーフィル
ム１ｂが積層されている。図２は本発明の半導体装置の
１例についての説明断面図を示す。図２における絶縁接
着テープ１Ｆとしては、本発明の接着テープが用いられ
る。ＩＣチップ２とリード６は、接着絶縁テープ１Ｆを
用いて融着固定される。図２の半導体装置は、封止樹脂
３で封止されている。The adhesive tape and semiconductor device of the present invention will be described with reference to the drawings. FIG. 1 shows an explanatory sectional view of an example of the adhesive tape of the present invention. In the example of FIG. 1, the adhesive polymer film 1b is laminated on both surfaces of the liquid crystal polymer film 1a. FIG. 2 is an explanatory sectional view of an example of the semiconductor device of the present invention. The adhesive tape of the present invention is used as the insulating adhesive tape 1F in FIG. The IC chip 2 and the leads 6 are fused and fixed using an adhesive insulating tape 1F. The semiconductor device of FIG. 2 is sealed with a sealing resin 3.
【００１５】[0015]
【実施例】次に本発明を実施例によりさらに詳細に説明
する。EXAMPLES Next, the present invention will be described in more detail by way of examples.
【００１６】実施例１〜３、比較例１〜４として、以下
の層構成を有する接着テープを作製した。As Examples 1 to 3 and Comparative Examples 1 to 4, adhesive tapes having the following layer structures were produced.
【００１７】実施例１
基材フィルム：Ｉ型液晶ポリマー（エコノール型液晶ポ
リマー）から成る５０μｍ厚の２軸延伸フィルム（ジャ
パンゴアテックス社製 ＢＩＡＣ ＢＡ−５０Ｆ）
接着剤ポリマーフィルム：ＦＥＰからなる１２．５μｍ
厚の２軸延伸フィルム（ダイキン工業社製 ネオフロン
ＮＦ−００１２Ｂ１）
基材フィルムを中心にし、両側に接着剤ポリマーフィル
ムを配し、２９０℃に加熱した４００ｍｍ径の熱ロール
と、加熱をしていない４００ｍｍ径のゴムロールの間で
加熱圧着して接着テープを製作した。この際のニップ圧
力は２．５ＭＰａ、ラインスピードは３ｍ／ｍｉｎとし
た。（液晶ポリマーフィルムと接着剤層の厚みの比＝
０．５）
実施例２
基材フィルム：Ｉ型液晶ポリマー（エコノール型液晶ポ
リマー）から成る２５μｍ厚の２軸延伸フィルム（ジャ
パンゴアテックス社製 ＢＩＡＣ ＢＡ−２５Ｆ）
接着剤ポリマーフィルム：ＦＥＰからなる１２．５μｍ
厚の２軸延伸フィルム（ダイキン工業社製 ネオフロン
ＮＦ−００１２Ｂ１）
実施例１と同じ製造条件で接着テープを製作した。（液
晶ポリマーフィルムと接着剤層の厚みの比＝１）
実施例３
基材フィルム：Ｉ型液晶ポリマー（エコノール型液晶ポ
リマー）から成る５０μｍ厚の２軸延伸フィルム（ジャ
パンゴアテックス社製 ＢＩＡＣ ＢＡ−５０Ｆ）
接着剤ポリマーフィルム：ＰＦＡからなる１２．５μｍ
厚の２軸延伸フィルム（ダイキン工業社製 ネオフロン
ＡＦ−００１２Ｂ１）
基材フィルムを中心にし、両側に接着剤ポリマーフィル
ムを配し、３００℃に加熱した４００ｍｍ径の熱ロール
と、加熱をしていない４００ｍｍ径のゴムロールの間で
加熱圧着して接着テープを製作した。この際のニップ圧
力は２．５ＭＰａ、ラインスピードは３ｍ／ｍｉｎとし
た。（液晶ポリマーフィルムと接着剤層の厚みの比＝
０．５）Example 1 Substrate film: Biaxially stretched film of I-type liquid crystal polymer (Econol type liquid crystal polymer) having a thickness of 50 μm (BIAC BA-50F manufactured by Japan GORE-TEX Co., Ltd.) Adhesive polymer film: FEP 12. 5 μm
Thick biaxially stretched film (Neotron NF-0012B1 manufactured by Daikin Industries, Ltd.) A base material film as a center, adhesive polymer films on both sides, and a 400 mm diameter heat roll heated to 290 ° C. and not heated. An adhesive tape was produced by heat-pressing between rubber rolls having a diameter of 400 mm. At this time, the nip pressure was 2.5 MPa and the line speed was 3 m / min. (Ratio of thickness of liquid crystal polymer film and adhesive layer =
0.5) Example 2 Substrate film: 25 μm thick biaxially stretched film (BIAC BA-25F manufactured by Japan Gore-Tex) made of I type liquid crystal polymer (Econol type liquid crystal polymer) Adhesive polymer film: made of FEP 12 0.5 μm
Thick biaxially stretched film (Neotron NF-0012B1 manufactured by Daikin Industries, Ltd.) An adhesive tape was produced under the same production conditions as in Example 1. (Ratio of thickness of liquid crystal polymer film to adhesive layer = 1) Example 3 Base film: Biaxially stretched film having a thickness of 50 μm and made of I type liquid crystal polymer (econol type liquid crystal polymer) (BIAC BA- manufactured by Japan GORE-TEX Co., Ltd.) 50F) Adhesive polymer film: 12.5 μm made of PFA
Thick biaxially stretched film (Neotron AF-0012B1 manufactured by Daikin Industries, Ltd.) A base material film as a center, adhesive polymer films on both sides, and a 400 mm diameter heat roll heated to 300 ° C. and not heated. An adhesive tape was produced by heat-pressing between rubber rolls having a diameter of 400 mm. At this time, the nip pressure was 2.5 MPa and the line speed was 3 m / min. (Ratio of thickness of liquid crystal polymer film and adhesive layer =
0.5)
【００１８】比較例１
基材フィルム：非熱可塑性ポリイミド樹脂から成る５０
μｍ厚の２軸延伸フィルム
接着剤層：熱可塑性ポリアミドイミド樹脂（厚み２５μ
ｍ）
上記構成の市販接着テープ（日立化成社製 ハイマール
ＨＭ１２２Ｕ）を用いた。Comparative Example 1 Base film: 50 made of non-thermoplastic polyimide resin
μm thick biaxially stretched film adhesive layer: thermoplastic polyamide-imide resin (thickness 25 μm
m) A commercially available adhesive tape (Himal HM122U manufactured by Hitachi Chemical Co., Ltd.) having the above-mentioned configuration was used.
【００１９】比較例２
Ｉ型液晶ポリマー（エコノール型液晶ポリマー）から成
る８０μｍ厚の２軸延伸フィルム（ジャパンゴアテック
ス社製 ＢＩＡＣ ＢＡ−８０Ｔ）
比較例３
基材フィルム：非熱可塑性ポリイミド樹脂から成る５０
μｍ厚の２軸延伸フィルム（宇部興産社製 ユーピレッ
クス ５０Ｓ）
接着剤ポリマーフィルム：ＦＥＰからなる１２．５μｍ
厚の２軸延伸フィルム（ダイキン工業社製 ネオフロン
ＮＦ−００１２Ｂ１）
実施例１と同じ製造条件で接着テープを製作した。
比較例４
基材フィルム：Ｉ型液晶ポリマー（エコノール型液晶ポ
リマー）から成る２５μｍ厚の２軸延伸フィルム（ジャ
パンゴアテックス社製 ＢＩＡＣ ＢＡ−２５Ｆ）
接着剤ポリマーフィルム：ＦＥＰからなる２５μｍ厚の
２軸延伸フィルム（ダイキン工業社製 ネオフロン Ｎ
Ｆ−００２５Ｂ１）
実施例１と同じ製造条件で接着テープを製作した。（基
材フィルムと接着剤ポリマーフィルムの厚みの比＝１：
２）Comparative Example 2 80 μm thick biaxially stretched film (BIAC BA-80T manufactured by Japan Gore-Tex) made of I type liquid crystal polymer (Econol type liquid crystal polymer) Comparative Example 3 Base film: made of non-thermoplastic polyimide resin Fifty
Biaxially stretched film with a thickness of μm (Upilex 50S manufactured by Ube Industries, Ltd.) Adhesive polymer film: 12.5 μm made of FEP
Thick biaxially stretched film (Neotron NF-0012B1 manufactured by Daikin Industries, Ltd.) An adhesive tape was produced under the same production conditions as in Example 1. Comparative Example 4 Substrate film: 25 μm thick biaxially stretched film made of I type liquid crystal polymer (Econol type liquid crystal polymer) (BIAC BA-25F manufactured by Japan GORE-TEX) Adhesive polymer film: 25 μm thick biaxially made of FEP Stretched film (Neoflon N manufactured by Daikin Industries, Ltd.
F-0025B1) An adhesive tape was produced under the same production conditions as in Example 1. (Ratio of thickness of base film and adhesive polymer film = 1:
2)
【００２０】次に、前記実施例及び比較例で得られた接
着テープについて、その最低接着温度（℃）、最高加工
温度（℃）、加工温度幅（℃）、吸水率（％）及びＣＴ
Ｅ（ｐｐｍ／℃）を測定し、その結果を表１に示す。Next, regarding the adhesive tapes obtained in the above Examples and Comparative Examples, the minimum adhesive temperature (° C.), maximum processing temperature (° C.), processing temperature range (° C.), water absorption rate (%) and CT
E (ppm / ° C.) was measured, and the results are shown in Table 1.
【００２１】[0021]
【表１】 [Table 1]
【００２２】なお、表１に示した最低接着温度（℃）等
の項目の具体的内容は以下の通りである。
（１）最低接着温度：リードとの接着強度がピール強度
で０．４Ｎ／ｍｍ以上得られる最低のプレス温度。接着
強度の試験片は、厚さ１００μｍ、幅１ｍｍの４２アロ
イ片を接着テープ上に重ね、所定温度に加熱したヒート
プレスを用い、０．２ＭＰａの圧力で０．８秒間プレス
して作製した。ピール強度は、この接着テープを４２ア
ロイから９０°の角度で引き剥がして測定した。
（２）最高加工温度：ヒートプレス時に目視で観察し
て、接着剤ポリマーの流れ出しや基材フィルムの穴あ
き、発煙が発生しない最高温度。
（３）吸水率：２３℃の水中に２４時間放置した後の質
量増加率（絶乾基準）で、下記条件により測定した。
試験片寸法：５０×５０ｍｍ
試料数量：約３ｇ（上記寸法のサンプルを約３ｇ分の枚
数準備する。）
乾燥質量：１００℃で３０ｍｉｎ乾燥後、質量を測定す
る。
吸水質量：２３℃の水に２４ｈｒ浸漬後、質量を測定す
る。
吸水率の計算：次式によりもとめる。The concrete contents of the items such as the minimum adhesion temperature (° C.) shown in Table 1 are as follows. (1) Minimum adhesive temperature: The minimum press temperature at which the adhesive strength with the lead is 0.4 N / mm or more in peel strength. The adhesive strength test piece was prepared by stacking a 42 alloy piece having a thickness of 100 μm and a width of 1 mm on the adhesive tape and pressing it at a predetermined temperature for 0.8 seconds using a heat press heated to a predetermined temperature. The peel strength was measured by peeling this adhesive tape from a 42 alloy at an angle of 90 °. (2) Maximum processing temperature: The maximum temperature at which the adhesive polymer does not flow out, the base film is perforated, or smoke is not observed by visual observation during heat pressing. (3) Water absorption rate: The rate of increase in mass after standing in water at 23 ° C. for 24 hours (absolute dry basis), which was measured under the following conditions. Specimen size: 50 × 50 mm Sample quantity: about 3 g (prepare about 3 g of the sample of the above size) Dry mass: After drying at 100 ° C. for 30 min, measure the mass. Absorbed mass: Measured after immersing in water at 23 ° C. for 24 hours. Calculation of water absorption rate: Calculate by the following formula.
【数２】
（４）ＣＴＥ：ＴＭＡで１５０℃まで昇温後、１０℃／
ｍｉｎで冷却した際の１００〜５０℃までの線膨張係数
で、下記条件により測定した。
試料幅：４．５ｍｍ
チャック間距離：１５ｍｍ
荷重：０．０５Ｎ[Equation 2] (4) CTE: After heating up to 150 ° C with TMA, 10 ° C /
The linear expansion coefficient from 100 to 50 ° C. when cooled at min was measured under the following conditions. Sample width: 4.5mm Distance between chucks: 15mm Load: 0.05N
【００２３】実施例４（半導体装置の作製）
実施例１の材料をリードフレームとＩＣチップの間に挟
み、３５０℃の温度、５ＭＰａの圧力で１秒間プレスを
行った。ＩＣチップのアルミパッドとリードフレームを
金ワイヤーで接合後、クレゾールノボラック型エポキシ
樹脂２０％、溶融シリカ７０％、硬化剤のノボラックフ
ェノール１０％からなる封止樹脂を用いて、トランスフ
ァ成形で封止を行った。この半導体パッケージを温度８
５℃、湿度８５％の環境に２４時間放置後、２０℃−２
８０℃のヒートショック試験（１０００サイクル）を行
ったところ、パッケージのクラックは発生せず、不良の
発生は０個／１００個と非常に優秀であった。Example 4 (Fabrication of Semiconductor Device) The material of Example 1 was sandwiched between a lead frame and an IC chip, and pressed at a temperature of 350 ° C. and a pressure of 5 MPa for 1 second. After bonding the aluminum pad of the IC chip and the lead frame with gold wire, transfer molding is performed using a sealing resin consisting of 20% cresol novolac type epoxy resin, 70% fused silica, and 10% novolac phenol as a curing agent. went. This semiconductor package has a temperature of
After leaving in an environment of 5 ° C and humidity of 85% for 24 hours, 20 ° C-2
When a heat shock test (1000 cycles) at 80 ° C. was performed, no cracks were generated in the package and the number of defects was 0/100, which was very excellent.
【００２４】[0024]
【発明の効果】本発明の接着テープは、耐熱性に優れ且
つ吸水率が極めて低い上に、その接着加工温度幅が広
く、さらにその薄厚製品の製造が容易であるという大き
な利点を有する。従って、本発明の接着テープは、半導
体装置に有利に適用することができ、本発明の接着テー
プを用いて作製された半導体装置は、半田リフローにお
ける高温加熱によっても、急激に水分が蒸発するような
ことはない。また、本発明の接着テープは、そのＣＴＥ
が半導体チップや導電性材料（ＣＴＥ：５〜１６ｐｐｍ
／℃）に近いため、それらに接着テープを接着させて
も、熱膨張差による材料変形が発生せず、半導体装置の
信頼性は大幅に向上する。EFFECT OF THE INVENTION The adhesive tape of the present invention has the great advantages that it has excellent heat resistance and extremely low water absorption, has a wide bonding processing temperature range, and is easy to manufacture thin products. Therefore, the adhesive tape of the present invention can be advantageously applied to a semiconductor device, and a semiconductor device manufactured by using the adhesive tape of the present invention has a tendency that water vaporizes rapidly even when heated at high temperature during solder reflow. There is no such thing. In addition, the adhesive tape of the present invention has a CTE
Are semiconductor chips and conductive materials (CTE: 5-16 ppm
/ ° C.), the material is not deformed due to the difference in thermal expansion even if the adhesive tape is adhered to them, and the reliability of the semiconductor device is significantly improved.
【図１】本発明の接着テープの１例を示す略断面図であ
る。FIG. 1 is a schematic sectional view showing an example of an adhesive tape of the present invention.
【図２】本発明の絶縁接着テープを用いて作製された半
導体装置の１例を示す略断面図である。FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor device manufactured using the insulating adhesive tape of the present invention.
１ 本発明の接着テープ １ａ 液晶ポリマーフィルム １ｂ 接着剤ポリマーフィルム １Ｆ 本発明の絶縁接着テープ ２ ＩＣチップ ３ 封止樹脂 ４ アルミパッド ５ 金ワイヤー ６ リード 1 Adhesive tape of the present invention 1a Liquid crystal polymer film 1b Adhesive polymer film 1F Insulating adhesive tape of the present invention 2 IC chip 3 Sealing resin 4 Aluminum pad 5 gold wire 6 leads
───────────────────────────────────────────────────── フロントページの続き (72)発明者 杉岡 幹昌 東京都世田谷区赤堤１丁目42番５号 ジャ パンゴアテックス株式会社内 Ｆターム(参考） 4J004 AA06 CA06 CD08 CD10 EA05 FA05 4J040 DA031 DA111 DA181 DC011 DC081 JA09 LA02 LA07 NA19 NA20 PA23 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Mikimasa Sugioka 42-5 Akatsumi 1-chome, Setagaya-ku, Tokyo Inside Pangoretex Co., Ltd. F term (reference) 4J004 AA06 CA06 CD08 CD10 EA05 FA05 4J040 DA031 DA111 DA181 DC011 DC081 JA09 LA02 LA07 NA19 NA20 PA23
Claims (10)
に、吸水率が０〜０．１％で且つ融点が１５０〜３４５
℃である接着剤層が形成されていることを特徴とする接
着テープ。1. A liquid crystal polymer film having a water absorption of 0 to 0.1% and a melting point of 150 to 345 on one or both sides.
An adhesive tape having an adhesive layer having a temperature of ℃.
を特徴とする請求項１に記載の接着テープ。2. The adhesive tape according to claim 1, wherein the adhesive layer is made of a fluororesin.
ン／ヘキサフルオロプロピレン共重合体、テトラフルオ
ロエチレン／パーフルオロアルキルビニルエーテル共重
合体、テトラフルオロエチレン／エチレン共重合体、ポ
リクロロトリフルオロエチレン、ポリフッ化ビニリデン
又はポリフッ化ビニルであることを特徴とする請求項２
に記載の接着テープ。3. The fluororesin is a tetrafluoroethylene / hexafluoropropylene copolymer, a tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer, a tetrafluoroethylene / ethylene copolymer, a polychlorotrifluoroethylene, a polyfluorine. It is vinylidene or polyvinyl fluoride.
The adhesive tape described in.
〜９０μｍであることを特徴とする請求項１〜３のいず
れかに記載の接着テープ。4. The thickness of the liquid crystal polymer film is 10
It is -90 micrometers, The adhesive tape in any one of Claims 1-3 characterized by the above-mentioned.
ることを特徴とする請求項１〜４のいずれかに記載の接
着テープ。5. The adhesive tape according to claim 1, wherein the adhesive layer has a thickness of 3 to 25 μm.
該接着材層の厚みの比が、０．０５〜１．５であること
を特徴とする請求項１〜５のいずれかに記載の接着テー
プ。6. The adhesive tape according to claim 1, wherein the ratio of the thickness of the adhesive layer to the thickness of the liquid crystal polymer film is 0.05 to 1.5.
ズマ処理又は紫外線処理により表面処理されていること
を特徴とする請求項１〜６のいずれかに記載の接着テー
プ。7. The adhesive tape according to claim 1, wherein the surface of the liquid crystal polymer film is surface-treated by plasma treatment or ultraviolet treatment.
ープからなることを特徴とする半導体装置用絶縁接着テ
ープ。8. An insulating adhesive tape for semiconductor device, comprising the adhesive tape according to claim 1.
の絶縁接着及び／又は金属製導電性材料同志間の絶縁接
着を絶縁接着テープを介してなる半導体装置において、
該絶縁接着テープとして、請求項８に記載の接着テープ
を用いることを特徴とする半導体装置。9. A semiconductor device comprising an insulating adhesive tape for insulating adhesion between a semiconductor chip and a metal conductive material and / or for insulating adhesion between metal conductive materials.
A semiconductor device using the adhesive tape according to claim 8 as the insulating adhesive tape.
とする請求項９に記載の半導体装置。10. The semiconductor device according to claim 9, which is sealed with a sealing resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001274172A JP2003082301A (en) | 2001-09-10 | 2001-09-10 | Adhesive tape and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001274172A JP2003082301A (en) | 2001-09-10 | 2001-09-10 | Adhesive tape and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003082301A true JP2003082301A (en) | 2003-03-19 |
Family
ID=19099267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001274172A Pending JP2003082301A (en) | 2001-09-10 | 2001-09-10 | Adhesive tape and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003082301A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005200542A (en) * | 2004-01-15 | 2005-07-28 | Japan Gore Tex Inc | Adhesive sheet |
| JP2009224785A (en) * | 2008-03-14 | 2009-10-01 | E I Du Pont De Nemours & Co | Device capable of thermally cooling while electrically insulating |
| JP2010046830A (en) * | 2008-08-19 | 2010-03-04 | Junkosha Co Ltd | Manufacturing method of gas barrier film, gas barrier film and gas barrier bag |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603131A (en) * | 1983-06-20 | 1985-01-09 | Nitto Electric Ind Co Ltd | Adhesive film for fixation of semiconductor element |
| JPS63100796A (en) * | 1986-10-16 | 1988-05-02 | 富士通株式会社 | Manufacture of fluorine resin multilayer printed board |
| JPH05138741A (en) * | 1991-11-19 | 1993-06-08 | Nitto Denko Corp | Adhesive sheet for printed circuit board and board using the same |
| JPH07323506A (en) * | 1993-02-25 | 1995-12-12 | Japan Gore Tex Inc | Liquid crystal polymer film and production thereof |
| JPH08143846A (en) * | 1994-11-24 | 1996-06-04 | Nitto Denko Corp | Flame-retardant adhesive |
| JPH09174786A (en) * | 1995-12-22 | 1997-07-08 | Japan Gore Tex Inc | Oriented material of liquid crystal polymer film having adhesive surface or metallic surface |
| JPH1034742A (en) * | 1996-07-19 | 1998-02-10 | Japan Gore Tex Inc | Liquid crystal polymer film and its laminate |
| JPH10306265A (en) * | 1997-05-02 | 1998-11-17 | Elf Atochem Japan Kk | Polyvinylidene fluoride-based composition adhesive to metal and electrode for battery |
| JPH11176872A (en) * | 1997-12-09 | 1999-07-02 | Hitachi Chem Co Ltd | Semiconductor device using fluorine-containing polymer as adhesive film |
| JPH11297896A (en) * | 1998-04-08 | 1999-10-29 | Hitachi Cable Ltd | Semiconductor package |
| WO2000061658A1 (en) * | 1999-04-09 | 2000-10-19 | Kaneka Corporation | Polyimide resin, resin composition with improved moisture resistance comprising the same, adhesive solution, filmy bonding member, layered adhesive film, and processes for producing these |
| JP2000332183A (en) * | 1999-05-20 | 2000-11-30 | Dainippon Printing Co Ltd | Lead frame member with heat dissipation plate and semiconductor device |
| JP2001172440A (en) * | 1999-12-17 | 2001-06-26 | Mitsui Chemicals Inc | Polyethylene resin composition and its use |
| JP2001192643A (en) * | 2000-01-06 | 2001-07-17 | Mitsubishi Cable Ind Ltd | Seal for semiconductor-manufacturing apparatus |
| WO2001055277A1 (en) * | 2000-01-19 | 2001-08-02 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame with adhesive film for semiconductor and semiconductor device using the same |
| JP2001244369A (en) * | 2000-02-25 | 2001-09-07 | Hitachi Chem Co Ltd | Insulating substrate with adhesive used for substrate for mounting semiconductor, its manufacturing method, substrate for mounting semiconductor using the substrate and its manufacturing method |
-
2001
- 2001-09-10 JP JP2001274172A patent/JP2003082301A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603131A (en) * | 1983-06-20 | 1985-01-09 | Nitto Electric Ind Co Ltd | Adhesive film for fixation of semiconductor element |
| JPS63100796A (en) * | 1986-10-16 | 1988-05-02 | 富士通株式会社 | Manufacture of fluorine resin multilayer printed board |
| JPH05138741A (en) * | 1991-11-19 | 1993-06-08 | Nitto Denko Corp | Adhesive sheet for printed circuit board and board using the same |
| JPH07323506A (en) * | 1993-02-25 | 1995-12-12 | Japan Gore Tex Inc | Liquid crystal polymer film and production thereof |
| JPH08143846A (en) * | 1994-11-24 | 1996-06-04 | Nitto Denko Corp | Flame-retardant adhesive |
| JPH09174786A (en) * | 1995-12-22 | 1997-07-08 | Japan Gore Tex Inc | Oriented material of liquid crystal polymer film having adhesive surface or metallic surface |
| JPH1034742A (en) * | 1996-07-19 | 1998-02-10 | Japan Gore Tex Inc | Liquid crystal polymer film and its laminate |
| JPH10306265A (en) * | 1997-05-02 | 1998-11-17 | Elf Atochem Japan Kk | Polyvinylidene fluoride-based composition adhesive to metal and electrode for battery |
| JPH11176872A (en) * | 1997-12-09 | 1999-07-02 | Hitachi Chem Co Ltd | Semiconductor device using fluorine-containing polymer as adhesive film |
| JPH11297896A (en) * | 1998-04-08 | 1999-10-29 | Hitachi Cable Ltd | Semiconductor package |
| WO2000061658A1 (en) * | 1999-04-09 | 2000-10-19 | Kaneka Corporation | Polyimide resin, resin composition with improved moisture resistance comprising the same, adhesive solution, filmy bonding member, layered adhesive film, and processes for producing these |
| JP2000332183A (en) * | 1999-05-20 | 2000-11-30 | Dainippon Printing Co Ltd | Lead frame member with heat dissipation plate and semiconductor device |
| JP2001172440A (en) * | 1999-12-17 | 2001-06-26 | Mitsui Chemicals Inc | Polyethylene resin composition and its use |
| JP2001192643A (en) * | 2000-01-06 | 2001-07-17 | Mitsubishi Cable Ind Ltd | Seal for semiconductor-manufacturing apparatus |
| WO2001055277A1 (en) * | 2000-01-19 | 2001-08-02 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame with adhesive film for semiconductor and semiconductor device using the same |
| JP2001244369A (en) * | 2000-02-25 | 2001-09-07 | Hitachi Chem Co Ltd | Insulating substrate with adhesive used for substrate for mounting semiconductor, its manufacturing method, substrate for mounting semiconductor using the substrate and its manufacturing method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005200542A (en) * | 2004-01-15 | 2005-07-28 | Japan Gore Tex Inc | Adhesive sheet |
| JP4598408B2 (en) * | 2004-01-15 | 2010-12-15 | ジャパンゴアテックス株式会社 | Adhesive sheet |
| JP2009224785A (en) * | 2008-03-14 | 2009-10-01 | E I Du Pont De Nemours & Co | Device capable of thermally cooling while electrically insulating |
| JP2010046830A (en) * | 2008-08-19 | 2010-03-04 | Junkosha Co Ltd | Manufacturing method of gas barrier film, gas barrier film and gas barrier bag |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4303705B2 (en) | Adhesive film for semiconductor and semiconductor device using the same | |
| TW200401020A (en) | Adhesive compositions, adhesive films and semiconductor devices using the same | |
| EP1249863A1 (en) | Semiconductor joining substrate-use tape with adhesive and copper-clad laminate sheet using it | |
| JP4900244B2 (en) | Thermoplastic resin composition for semiconductor, adhesive film, lead frame, semiconductor device using the same, and method for manufacturing semiconductor device | |
| JP2017002115A (en) | Fluorine resin film, laminated body, and method for producing the laminated body | |
| JP3754700B1 (en) | Adhesive film for semiconductor and semiconductor device using the same | |
| JP2603543B2 (en) | Adhesive tape for electronic components | |
| JP2008006818A (en) | Multilayer laminate substrate useful for electronic application | |
| JP2005144816A (en) | Flexible metal laminate | |
| JP2007284670A (en) | Adhesive film and semiconductor device by using the same | |
| JP2006272886A (en) | Flexible metal laminate and flexible printed circuit board | |
| JP2000154356A (en) | Adhesive member, wiring board having adhesive member disposed thereon for loading semiconductor, and semiconductor device using the same | |
| JP5023667B2 (en) | Flexible heater | |
| JP4251807B2 (en) | Adhesive sheet for semiconductor device manufacturing | |
| JP2003082301A (en) | Adhesive tape and semiconductor device | |
| JP3048300B2 (en) | Adhesive insulating tape and semiconductor device using the same | |
| JP4888479B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP3369016B2 (en) | Lead frame with heat sink and semiconductor device using the same | |
| JP2007223205A (en) | Flexible laminate and its manufacturing method | |
| JP3620156B2 (en) | Low temperature adhesive film adhesive, lead frame and semiconductor device using the same | |
| JP3765331B2 (en) | Low stress film adhesive, lead frame and semiconductor device using the same | |
| JP2009051035A (en) | Laser-welded laminate and its manufacturing method | |
| JP2008124295A (en) | Die attachment tape, and semiconductor device employing the same | |
| JP2002256227A (en) | Photosensitive adhesive film, its use and method for producing semiconductor device | |
| JP7408286B2 (en) | Release film and electronic device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20040716 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080904 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111021 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111108 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120228 |