JP2003077648A - Light emitting diode, and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve problems that a sufficient numerical aperture is less easily obtained with a regular element for taking out the light from a lower side thereof when a light emitting element is formed on an active matrix substrate using a plurality of TFTs, the light deriving efficiency is low, and the high efficiency, the long service life and the excellent productivity cannot be satisfied at the same time. SOLUTION: Light emission can be obtained on the side (the upper side) opposite to a substrate surface even with the element having a projection structure on the substrate and formed on a regular transparent anode by forming a light emission unit on the side surface thereof in an oblique vapor deposition. The emission of high intensity can be easily obtained with high efficiency, long service life and high productivity.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film electroluminescence (EL) element, and more particularly to a self-luminous element which can be used as a light source for a flat self-luminous display device, communication, lighting and other purposes. is there.

[0002]

2. Description of the Related Art In recent years, LCD panels have been widely used as flat panel display devices, but they still have drawbacks such as slow response speed and narrow viewing angle. There are problems such as insufficient characteristics and high panel cost. In such a situation, thin-film EL as a new light-emitting element that is self-luminous, has excellent visibility, has a fast response speed, and can be expected to be applied in a wide range
Expectations are concentrated on the element. In particular, thin-film EL devices that use organic materials that can use simple film formation processes such as vapor deposition and coating at room temperature for all or part of the layers of the device are also called organic EL devices. Many studies have been conducted due to the attractiveness of costs.

A thin film EL element (organic EL element) is one which injects electrons and holes from electrodes and obtains light emission by recombination thereof, and many studies have been made for a long time. It was far from being applied to conventional light emitting devices.

Under such circumstances, the device proposed by Tang et al. In 1987 (CW Tang and
S. A. Vanslyke: Appl. Phys. Le
tt. 51 (1987) 913. ) Is an element having a structure having a hole injecting electrode, a hole transporting layer, a light emitting layer, and a cathode on a transparent substrate, wherein ITO is used as the hole injecting electrode, a diamine derivative layer having a thickness of 75 nm is used as the hole transporting layer, An aluminum quinoline complex layer having a film thickness of 60 nm was used as the light emitting layer, and a MgAg alloy having both electron injection property and stability was used as the cathode. In particular, by adopting a diamine derivative having excellent transparency as well as improving the cathode, it is possible to maintain sufficient transparency even at a film thickness of 75 nm, and at this film thickness, a sufficient pinhole is obtained. Since it is possible to obtain a uniform thin film without any defects, the total film thickness of the device including the light emitting layer can be made sufficiently thin (about 150 nm), and high brightness light emission can be obtained at a relatively low voltage. It was Specifically, 1000 cd / m ² at a low voltage of 10 V or less
The above high brightness and high efficiency of 1.5 lm / W or more are realized. The report of Tang et al. Has been a catalyst for further improvement of the cathode, and device innovations such as insertion of an electron injection layer and insertion of a hole injection layer. .

A thin film EL which is currently generally studied
The (organic EL) element will be outlined.

Each layer of the device is formed by laminating a hole injecting electrode, a hole transporting layer, a light emitting layer and a cathode in this order on a transparent substrate,
Providing a hole injection layer between the hole injection electrode and the hole transport layer,
An electron transport layer may be provided between the light emitting layer and the cathode, and an electron injection layer may be provided at the interface with the cathode. In this way, by making each layer play a role by separating the functions, it is possible to select an appropriate material for each layer and improve the characteristics of the device.

Corning 173 is generally used as the transparent substrate.
Glass substrates such as 7 are widely used. Board thickness is 0.7
About mm is easy to handle from the viewpoint of strength and weight.

As the hole injecting electrode, a transparent electrode such as an ITO sputtered film, an electron beam vapor deposition film, an ion plating film or the like is used. The film thickness is determined from the required sheet resistance value and visible light transmittance. However, since the organic EL element has a relatively high driving current density, it may be used in a thickness of 100 nm or more to reduce the sheet resistance. Many.

The hole transport layer is composed of N, N'-bis (3-methylphenyl) -N, N'-diphenylbenzidine (hereinafter referred to as T
Referred to as PD), N, N'-bis (α-naphthyl)-
N, N'-diphenylbenzidine (hereinafter referred to as NPD), etc., and the diamine derivatives used by Tang et al., Especially Q1-G- disclosed in Japanese Patent No. 2037475.
A vacuum deposition film of a diamine derivative having a Q2 structure is widely used. These materials are generally excellent in transparency and
Even if the film thickness is about m, it is almost transparent, and because it has excellent film-forming properties, a film without defects such as pinholes can be obtained. Even if the total film thickness of the device is reduced to about 100 nm, reliability such as short circuit is obtained. There is a feature that the above problem does not occur easily.

Similar to the report of Tang et al., The light-emitting layer is generally formed by using an electron-transporting light-emitting material such as tris (8-quinolinolato) aluminum to form a film having a thickness of several tens of nm by vacuum vapor deposition. For the purpose of realizing various emission colors, the light emitting layer is relatively thin and the electron transport layer is 20 n
A so-called double hetero structure in which about m layers are stacked may be adopted.

The cathode is an alloy of a metal having a low work function and a low electron injection barrier and a metal having a relatively large work function and stable such as MgAg alloy or AlLi alloy proposed by Tang et al., Or various electron injection layers such as LiF. A laminated cathode with aluminum or the like is often used.

In addition to the laminated structure of the hole transporting layer / electron transporting light emitting layer, the structure of the hole transporting light emitting layer / electron transporting layer, or the hole transporting layer / light emitting layer / electron transporting layer. The structure is also widely used. Whatever the layer structure is used, the transparent substrate, the hole injecting electrode, and the cathode are the same as described above.

In recent years, active drive type displays have been actively studied. Journal of
the Society for Information
ion Display, vol. 8, No. 2, p9
3-97, low-temperature polysilicon TFT for driving each pixel
An organic EL display using is disclosed.

[0014]

Thus, an organic EL device and a display device using the same are disclosed. Usually, a transparent anode, an organic layer and a cathode are formed in this order on a transparent substrate, and the organic EL device is formed from the anode side. Although it is configured to take out light emission, this configuration has a drawback that it is difficult to obtain a large aperture ratio particularly in an active matrix organic EL display that uses a plurality of low-temperature polysilicon TFTs for driving each pixel. It was difficult to obtain high efficiency because the extraction efficiency was low.

In general, when the structure is such that light is extracted from the upper part, a large aperture ratio can be easily realized, but when the transparent electrode is formed on the upper part, the lower organic layer does not deteriorate or does not deteriorate. However, there is a problem that sufficient carrier injection characteristics cannot be obtained, and an element having sufficient characteristics has not been obtained in terms of efficiency and life.

[0016]

[Means for Solving the Problems] In view of such a situation,
The authors designed elements and display devices of various structures and examined the characteristics thoroughly, and as a result, by using a specific element structure, the light emitted in the element can be efficiently extracted to the outside, The inventors have completed the present invention by finding that excellent efficiency and life can be achieved.

Specifically, the light emitting device according to the invention of claim 1 of the present application has a projection structure on at least a substrate, a light emitting portion is formed on a part of the projection structure, and another projection structure is provided. It is a light-emitting element having a structure for extracting light from part or all.

A light emitting device according to a second aspect of the present invention is the light emitting device according to the first aspect, wherein the projection structure is a rectangular parallelepiped shape, a light emitting portion is formed on a side surface of the rectangular parallelepiped, and the rectangular parallelepiped is located above the rectangular parallelepiped. The light emitting element has a structure for extracting light.

A light emitting device according to a third aspect of the present invention is the light emitting device according to the first or second aspect, wherein at least the lower surface of the rectangular parallelepiped projection structure has a reflecting function.

According to a fourth aspect of the present invention, in the light emitting element according to any one of the first to third aspects, among the side surfaces of the rectangular parallelepiped protrusion structure other than the side surface on which the light emitting portion is formed, A light emitting device having a reflecting function on at least one side surface.

According to a fifth aspect of the present invention, in the light emitting element according to any one of the first to fourth aspects, the emitted light is taken out from the upper surface of the rectangular parallelepiped projection structure, and the upper surface has a convex shape. It is a light emitting element having.

According to a sixth aspect of the present invention, a light emitting device has a concave structure on at least a substrate, a light emitting portion is formed in a part of the concave structure, and a part or all of a portion other than the concave part of the substrate is formed. The light emitting element has a structure for extracting light from the light emitting element.

The light emitting device according to the invention of claim 7 of the present application is a light emitting device having at least a transparent electrode, a light emitting functional layer, and a reflective electrode on a substrate, wherein the transparent electrode has a color of light emitted on the substrate. Is a light-emitting element that is disposed in contact with a transparent structure and is emitted to the outside after the light emitted from the light-emitting functional layer enters the structure through the transparent electrode.

A display device according to an eighth aspect of the present invention is a display device having a plurality of light emitting elements according to any one of the first to seventh aspects.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a light emitting device, wherein at least a projection structure is provided on a substrate, and a part of the projection structure is formed by a film forming means obliquely with respect to the substrate. And a structure in which light is extracted from another part or all of the protrusion structure.

According to a tenth aspect of the present invention, there is provided a light emitting device manufacturing method, wherein at least a concave structure is formed on a substrate, and a part of the concave structure is formed by an oblique film forming means with respect to the substrate. And a structure for performing light extraction from a part or the whole of the substrate other than the recessed part.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION A light emitting device according to an embodiment of the present invention, a method for manufacturing the same, and a display device using a plurality of them will be described below.

The light emitting device of the present invention has a projection structure or a concave shape on at least the substrate. The projection shape may be a rectangular parallelepiped shape such as a cube, but is not limited to this. The cross section may be trapezoidal, parallelogrammic, or various shapes such as a cylinder, a cone, and a triangular pyramid.

The light emitting portion that actually generates light is formed in a part of these protrusion structures. Then, light is extracted to the outside from a part or all of the remaining portion where the light emitting portion is not formed. The shape of the portion where the light is extracted to the outside can be a desired design of the emission intensity distribution and the like by applying a configuration in the ordinary geometrical optics such as various lens shapes. Further, the reflection function may be any function as long as it can reflect the light emitted from the light emitting portion, and various optical reflection films and the like can be used in addition to a metal film such as an Al vapor deposition film. Further, it is also possible to use a difference between the refractive index of the protrusion structure and the refractive index of the surroundings so as to have a design that substantially has a reflecting function.

The concave shape may be a rectangular parallelepiped shape such as a cube, but is not limited to this. The concave cross section may have a trapezoidal shape, a parallelogram shape, or various shapes such as a cylinder, a cone, and a triangular pyramid. Further, a groove structure having a cross section of a triangle, a quadrangle, a semicircle or the like is also conceivable. Even in the case of the concave shape, the light emitting portion that actually generates light is formed in a part thereof. The light is extracted to the outside from a part or the whole of the remaining portion where the concave shape is not formed, but in some cases, it is not denied that the light is extracted from a part of the concave shape. The shape of the part where the light is extracted to the outside is various lens shapes, etc., and the design in ordinary geometrical optics is applied, and the emission intensity distribution etc. can be designed as desired if the projection shape is provided. Is the same as.

As described above, the main part of the present invention has a structure in which a specific structure is provided on the substrate, a light emitting part for actually generating light is provided in a part of the structure, and light is taken out from other parts. In general, ordinary materials, structures, and manufacturing methods can be widely used for the light emitting portion itself that actually generates light. Specifically, a configuration in which an ITO electrode is used as a transparent anode, a cathode is provided after providing a light emitting functional layer, and light is emitted from the transparent anode side is widely used. Here, the light emitting functional layer means not only a light emitting layer which actually emits light but also a hole transporting layer / electron transporting light emitting layer, a hole transporting light emitting layer / electron transporting layer, a hole transporting layer / light emitting layer / electron transporting layer. Various structures such as layers are collectively referred to, and a structure having a hole injection layer on the anode side and an electron injection layer on the cathode side is also widely used.

The substrate of the present invention does not need to be transparent because light is not extracted to the lower side of the substrate surface (through the substrate) but is extracted to the upper side, so that a circuit composed of a plurality of TFTs or the like is formed. A major feature is that even an opaque substrate such as a dented substrate can be used.

ITO or the like is preferably used for the transparent anode in the present invention. As the light emitting functional layer in this element, a general hole injection layer, hole transporting layer, light emitting layer, and electron transporting layer can be widely used. For the hole injection layer, starburst amine, oligoamine derivatives, etc. are often used for the purpose of smoothing the surface roughness of ITO and improving the hole injection efficiency to lower the driving voltage and extend the life. It may also be referred to as a buffer layer. As the hole transport layer, in addition to the above TPD and NPD, it is also possible to use it in combination with a technique for realizing excellent characteristics by using a specific blend type hole transport layer. As the electron transport layer, not only the metal complex system widely studied since Tang et al. Using tris (8-quinolinolato) aluminum, but also oxadiazole derivative, triazole derivative and other materials can be widely used.

The cathode in the present invention is, in addition to the MgAg alloy proposed by Tang et al.
A laminated cathode of a LiF ultra-thin film and Al and a laminated cathode of a Li thin film and Al can be widely used.

Next, more detailed description will be given based on specific examples, but the embodiment of the present invention is not limited to these specific examples. The individual materials were used after being synthesized in our laboratory by a conventional method and sufficiently purified, except for the compounds for which the suppliers were specified.

(Embodiment 1) A light emitting device, a method of manufacturing the same, and a display device which is an assembly of the light emitting devices according to Embodiment 1 of the present invention will be described in detail below with reference to FIG.

As a substrate, an active matrix TF having a TFT group for driving an active matrix pixel
The T array substrate 101 was used. An Al film was provided as the reflection layer 106 and a polyimide film was provided as the protrusion structure 102 corresponding to each pixel of the TFT array substrate. The Al film was formed to have a film thickness of 100 nm by the vacuum mask vapor deposition method, but the same result was obtained even when a desired pattern was obtained by the photolithography process and the etching process after the solid film formation. For the protrusion structure, a polyimide film was formed by using photolithography. The film thickness after post-baking at 200 ° C. for 30 minutes was about 50 μm.

Next, using the IDIXO target manufactured by Idemitsu Kosan Co., Ltd., the transparent anode 103 was sputter-deposited to a film thickness of about 150 nm from an angle of 45 degrees oblique to the normal to the substrate. The film formation range was limited to the side surface of the protrusion structure 102 using a mask. The transparent anode 103 was formed so as to be connected to each pixel electrode of the TFT array substrate 101.

Further, as the light emitting functional layer 104, a hole transport layer and a light emitting layer are formed by laminating by a vacuum mask vapor deposition method,
The reflective cathode 105 was formed by stacking an electron injection cathode and a cathode by the vacuum mask vapor deposition method.

All of the vacuum mask vapor depositions are commercially available high vacuum vapor deposition equipment (EBV-6DA type manufactured by Nippon Vacuum Technology Co., Ltd.).
A modified device was used. The main exhaust system is exhaust speed 1
It is a 500 liter / min turbo molecular pump (TC1500, manufactured by Osaka Vacuum Co., Ltd.), and the ultimate vacuum is about 1.
It is less than × 10 ^-6 Torr, and all vapor depositions are 2 to 3 × 1.
It was performed in the range of 0 ^-6 Torr. All evaporations were performed by connecting a DC power supply (PAK10-70A, manufactured by Kikusui Electronics Co., Ltd.) to a resistance heating type evaporation boat made of tungsten.

As the hole transport layer, N, N'-bis (4'-diphenylamino-4-biphenylyl) -N,
N'-diphenylbenzidine (TPT, manufactured by Hodogaya Chemical Co., Ltd.) at a deposition rate of 0.3 (nm / s) was used for 4-N,
N-diphenylamino-α-phenylstilbene (P
S) was co-evaporated at a vapor deposition rate of 0.01 (nm / s) to form a blended hole transport layer having a film thickness of about 80 (nm).

As the light emitting layer, tris (8-quinolinolato) aluminum (Alq3, manufactured by Dojindo Co., Ltd.) was formed to a film thickness of about 40 nm at a deposition rate of 0.3 nm / s.

As the electron injection cathode, a Li vapor deposition layer was formed to a film thickness of about 10 (nm).

Finally, as the cathode, an Al vapor deposition film was formed to a film thickness of about 100 nm.

The light-emitting device thus produced was leaked in the vapor deposition tank with dry nitrogen, and then, in a dry nitrogen atmosphere,
Corning 7059 glass lid with adhesive (Anerva Co., Ltd., trade name Super Back Seal 953-700
The sample was attached in step 0).

The light emitting element sample thus obtained is
The evaluation was performed as follows.

The initial evaluation was carried out 12 hours after the glass lid was adhered after vapor deposition of the device in a normal laboratory environment of normal temperature and normal humidity, and the luminous efficiency (cd / A) and 1000 (cd / m ² ) were emitted. Drive voltage was evaluated. The initial brightness is 1000
At a current value of (cd / m ² ), a continuous light emission test was performed by driving at a constant DC current in a normal laboratory environment of normal temperature and normal humidity. From this test, the time when the brightness reached to half (500 cd / m ² ) was evaluated as the life. The luminance was measured from the direction normal to the substrate surface, and the luminous efficiency was obtained by dividing the luminance by the driving current density to obtain the apparent luminous efficiency. All driving was performed through the driving TFT for each pixel provided in the TFT array substrate.

The luminance is measured by a luminance meter (manufactured by Tokyo Optical Machine Co., Ltd.,
It was measured by a trade name Topcon Luminescence Meter BM-8). The luminescence image quality such as luminance unevenness and black spots (non-luminous portion) was observed with a 50 × optical microscope.

The results of these evaluations are shown in (Table 1).

[0050]

[Table 1]

According to this embodiment, high luminous efficiency is obtained,
A light-emitting element that emits light with excellent visibility by self-light emission with a low driving voltage, has a small decrease in brightness in continuous light emission tests, has no defects such as black spots and uneven brightness, and can be used stably for an extremely long period of time. And the display device as a set of them could be realized.

Example 2 In addition to the reflective layer 106 on the bottom surface of the protrusion structure 102 prepared in Example 1, the protrusion structure 102 was used.
A light emitting element sample was prepared in the same manner as in Example 1 except that the reflective layer was formed on the side surface (the side surface opposite to the light emitting portion).

The results are shown in (Table 1).

(Example 3) A light emitting element sample was prepared in the same manner as in Example 1 except that the shape of the upper surface of the projection structure 102 prepared in Example 1 was a convex lens shape.

The results are shown in (Table 1).

(Embodiment 4) Instead of forming the projection shape 102 in Embodiment 1, a concave shape is formed, and the transparent anode 103, the light emitting functional layer 104, and the reflective cathode 105 are formed on the side surfaces of the concave shape.
A light emitting device sample was prepared in the same manner as in Example 1 except that the above was formed, and evaluated as described in Example 1.

The results are shown in (Table 1).

(Comparative Example 1) Using a TFT array substrate having a transparent opening, a transparent anode 103, a light emitting functional layer 104,
The reflective cathode 105 has the same size as the light emitting portion of the first embodiment,
It was formed on the transparent opening of the array substrate and emitted light was taken out from the TFT array substrate side (through the TFT array substrate). The transmittance of the transparent aperture for the emission wavelength was 90% or more.

The transparent anode 103, the light emitting functional layer 104, and the reflective cathode 105 were formed by vapor deposition perpendicular to the substrate surface.
The same material was used, and the film thicknesses were adjusted to be the same as in Example 1. A light emitting device sample was prepared in the same manner as in Example 1 except for the above, and evaluated as described in Example 1.

The results are shown in (Table 1).

In Table 1, TPT is N,
N′-bis (4′-diphenylamino-4-biphenylyl) -N, N′-diphenylbenzidine, PS is 4-
N, N-diphenylamino-α-phenylstilbene,
Alq is tris (8-quinolinolato) aluminum,
Al represents aluminum and Li represents lithium, which are described in order from the anode side by separating them with / as a symbol showing a laminated structure from the left. The numbers in parentheses indicate the film thickness in nm, and + indicates a coexisting film of both components such as doping mixture.

[0062]

As described above, the light emitting device according to the present invention, the manufacturing method thereof, and the display device using the same have been described. However, the present invention has at least a protrusion structure on a substrate, and a part of the protrusion structure. By using a light-emitting element characterized in that a light-emitting portion is formed in, and light is extracted from other part or all of the protrusion structure.
Alternatively, more preferably, by using a light emitting element characterized in that the projection structure is a rectangular parallelepiped shape, a light emitting portion is formed on a side surface of the rectangular parallelepiped, and light is extracted from an upper portion of the rectangular parallelepiped, or More preferably, by using a light emitting element characterized in that at least the lower surface of the rectangular parallelepiped projection structure has a reflecting function, or more preferably, the light emitting portion of the rectangular parallelepiped projection structure is formed. Of the sides other than the side,
By using a light emitting element characterized by having a reflecting function on at least one side surface, or more preferably, emitted light is extracted from the upper surface of the rectangular parallelepiped projection structure, and the upper surface has a convex shape. By using a light-emitting element characterized by, or at least has a concave structure on the substrate, the light-emitting portion is formed in a part of the concave structure, and light is emitted from a part or the whole of the substrate except the concave part. By using a light-emitting element having a structure for taking out, or a light-emitting element having at least a transparent electrode, a light-emitting functional layer, and a reflective electrode on a substrate, the transparent electrode being formed on the substrate. After being placed in contact with a structure that is transparent to the emission color and the light emitted from the light-emitting functional layer enters the structure through the transparent electrode. By using a light emitting element that is extracted to the outside, high light extraction efficiency can be obtained, high light emission efficiency, extremely long life, no defects such as unevenness and black spots, and low drive voltage. It is possible to realize a light emitting device which can obtain light emission with excellent visibility by light emission, has a small decrease in luminance in a continuous light emission test, consumes less power, and can be stably used for an extremely long period of time.

When any of the light-emitting elements disclosed in Examples 1 to 4 is used, a display having high brightness, high efficiency, low power consumption, excellent moving image response, and excellent visibility is obtained. Was realized. Further, even in the case of a display device with high definition and high resolution and multiple gradations, it was possible to realize extremely good display quality without any problems such as crosstalk. Further, even in the continuous operation test, excellent stability was achieved in which no change such as decrease in brightness was observed over an extremely long time.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a light emitting device of Example 1.

[Explanation of symbols]

101 TFT array substrate 102 Projection structure 103 transparent anode 104 Light emitting functional layer 105 reflective cathode 106 reflective layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification symbol FI theme code (reference) H05B 33/14 H05B 33/14 A (72) Inventor Hisanori Sugiura 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. in the F-term (reference) 3K007 AB02 AB03 AB06 AB11 AB17 AB18 BA06 BB06 BB07 CA00 CB01 CC01 DA01 DB03 EB00 FA01 5C094 AA10 AA24 AA31 AA43 BA03 BA27 CA19 DA13 DB01 EA04 EA05 EB10 ED01 ED11 FA01 FA02 FA04 FB01 FB20 GB10 5G435 AA03 AA17 BB05 CC09 FF02 FF03 GG02 HH01 HH20 KK05

Claims (10)

[Claims] 1. A structure having at least a projecting structure on a substrate, a light emitting portion being formed on a part of the projecting structure, and light being extracted from another part or all of the projecting structure. Light emitting element. 2. The projection structure has a rectangular parallelepiped shape, a light emitting portion is formed on a side surface of the rectangular parallelepiped, and light is extracted from an upper portion of the rectangular parallelepiped.
The light emitting device according to. 3. The light emitting device according to claim 1, wherein at least the lower surface of the rectangular parallelepiped projection structure has a reflecting function. 4. The at least one side surface of the rectangular parallelepiped projection structure other than the side surface on which the light emitting portion is formed has a reflecting function. Light emitting element. 5. The light emitting device according to claim 1, wherein emitted light is extracted from the upper surface of the rectangular parallelepiped projection structure, and the upper surface of the projection structure has a convex shape. 6. A structure having at least a concave structure on a substrate, wherein a light emitting portion is formed in a part of the concave structure, and light is extracted from a part or all of a part other than the concave part of the substrate. Characteristic light emitting element. 7. A light emitting device having at least a transparent electrode, a light emitting functional layer, and a reflective electrode on a substrate, wherein the transparent electrode is in contact with a structure that is transparent to the emission color formed on the substrate. A light-emitting element, which is arranged and in which light emitted from the light-emitting functional layer enters the structure through a transparent electrode and is then extracted to the outside. 8. A display device having a plurality of light emitting elements according to claim 1. Description: 9. A projection structure is provided on at least a substrate, and a light emitting portion is formed on a part of the projection structure by film forming means obliquely with respect to the substrate. A method for manufacturing a light-emitting element, which comprises forming a structure for extracting light from all. 10. A substrate has at least a concave structure, and a light emitting portion is formed on a part of the concave structure by a film forming means obliquely with respect to the substrate. A method for manufacturing a light-emitting element, which comprises forming a structure for extracting light from a part or the whole.