JP2003092182A - Luminescent element and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem that it is difficult to provide RGB pixels with high resolution, high color purity, high yield and excellent productivity without color mixture. SOLUTION: This luminescent element is characterized by having a process capable of controlling the current-carrying for every pixel at least on a substrate, by forming at least a luminescent dopant receiving layer on an electrode of the pixel, by tightly fitting a dopant feeding sheet with a dopant feeding layer separately formed at least on the electrode on the substrate with the dopant receiving layer formed to apply a voltage between the electrode of the dopant feeding sheet and every pixel, thereby moving the dopant in the dopant feeding layer into the dopant receiving layer and thereafter by allowing luminescence control by forming at least an electrode to carry a current between the electrode and every pixel.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film electroluminescence (EL) element, and more particularly to a self-luminous element which can be used as a light source for a flat self-luminous display device, communication, lighting and other purposes. is there.

[0002]

2. Description of the Related Art In recent years, LCD panels have been widely used as flat panel display devices, but they still have drawbacks such as slow response speed and narrow viewing angle. There are problems such as insufficient characteristics and high panel cost. In such a situation, thin-film EL as a new light-emitting element that is self-luminous, has excellent visibility, has a fast response speed, and can be expected to be applied in a wide range
Expectations are concentrated on the element. In particular, thin-film EL devices that use organic materials that can use simple film formation processes such as vapor deposition and coating at room temperature for all or part of the layers of the device are also called organic EL devices. Many studies have been conducted due to the attractiveness of costs.

A thin film EL element (organic EL element) is one which injects electrons and holes from electrodes and obtains light emission by recombination thereof, and many studies have been made for a long time. It was far from being applied to conventional light emitting devices.

Under such circumstances, the device proposed by Tang et al. In 1987 (CW Tang and
S. A. Vanslyke: Appl. Phys. Le
tt. 51 (1987) 913. ) Is an element having a structure having a hole injecting electrode, a hole transporting layer, a light emitting layer, and a cathode on a transparent substrate, wherein ITO is used as the hole injecting electrode, a diamine derivative layer having a thickness of 75 nm is used as the hole transporting layer, An aluminum quinoline complex layer having a film thickness of 60 nm was used as the light emitting layer, and a MgAg alloy having both electron injection property and stability was used as the cathode. In particular, by adopting a diamine derivative having excellent transparency as well as improving the cathode, it is possible to maintain sufficient transparency even at a film thickness of 75 nm, and at this film thickness, a sufficient pinhole is obtained. Since it is possible to obtain a uniform thin film without any defects, the total film thickness of the device including the light emitting layer can be made sufficiently thin (about 150 nm), and high brightness light emission can be obtained at a relatively low voltage. It was Specifically, 1000 cd / m ² at a low voltage of 10 V or less
The above high brightness and high efficiency of 1.5 lm / W or more are realized. The report of Tang et al. Has been a catalyst for further improvement of the cathode, and device innovations such as insertion of an electron injection layer and insertion of a hole injection layer. .

A thin film EL which is currently generally studied
The (organic EL) element will be outlined.

Each layer of the device is formed by laminating a hole injecting electrode, a hole transporting layer, a light emitting layer and a cathode in this order on a transparent substrate,
Providing a hole injection layer between the hole injection electrode and the hole transport layer,
An electron transport layer may be provided between the light emitting layer and the cathode, and an electron injection layer may be provided at the interface with the cathode. In this way, by making each layer play a role by separating the functions, it is possible to select an appropriate material for each layer and improve the characteristics of the device.

Corning 173 is generally used as the transparent substrate.
Glass substrates such as 7 are widely used. Board thickness is 0.7
About mm is easy to handle from the viewpoint of strength and weight.

As the hole injecting electrode, a transparent electrode such as an ITO sputtered film, an electron beam vapor deposition film, an ion plating film or the like is used. The film thickness is determined from the required sheet resistance value and visible light transmittance. However, since the organic EL element has a relatively high driving current density, it may be used in a thickness of 100 nm or more to reduce the sheet resistance. Many.

The hole transport layer is composed of N, N'-bis (3-methylphenyl) -N, N'-diphenylbenzidine (hereinafter referred to as T
Referred to as PD), N, N'-bis (α-naphthyl)-
N, N'-diphenylbenzidine (hereinafter referred to as NPD), etc., and the diamine derivatives used by Tang et al., Especially Q1-G- disclosed in Japanese Patent No. 2037475.
A vacuum deposition film of a diamine derivative having a Q2 structure is widely used. These materials are generally excellent in transparency and
Even if the film thickness is about m, it is almost transparent, and because it has excellent film-forming properties, a film without defects such as pinholes can be obtained. Even if the total film thickness of the device is reduced to about 100 nm, reliability such as short circuit is obtained. There is a feature that the above problem does not occur easily.

Similarly to the report by Tang et al., The light-emitting layer is formed by vacuum deposition of an electron-transporting light-emitting material such as tris (8-quinolinolato) aluminum (hereinafter referred to as Alq) for several tens of n.
A general structure is used in which the film is formed to a film thickness of m. For the purpose of realizing various emission colors, a so-called double hetero structure in which the light emitting layer is relatively thin and an electron transporting layer is laminated by about 20 nm may be adopted.

The cathode is an alloy of a metal having a low work function and a low electron injection barrier and a metal having a relatively large work function and stable such as MgAg alloy or AlLi alloy proposed by Tang et al., Or various electron injection layers such as LiF. A laminated cathode with aluminum or the like is often used.

In addition to the laminated structure of the hole transporting layer / electron transporting light emitting layer, the structure of the hole transporting light emitting layer / electron transporting layer, or the hole transporting layer / light emitting layer / electron transporting layer. The structure is also widely used. Whatever the layer structure is used, the transparent substrate, the hole injecting electrode, and the cathode are the same as described above.

In recent years, active drive type displays have been actively studied. Journal of
the Society for Information
ion Display, vol. 8, No. 2, p9
3-97, low-temperature polysilicon TFT for driving each pixel
An organic EL display using is disclosed.

In order to use such a light emitting element as a display, it is generally necessary to provide RGB light emission, which is the three primary colors of light, as a subpixel. In general, these methods are widely used in which a host material is doped with a luminescent dopant having a luminescent color corresponding to RGB by a process such as co-evaporation. A method using mask vapor deposition is widely used for selecting the doping for each of the RGB sub-pixels, but a method for directly forming each sub-pixel by an inkjet method using a paint corresponding to the RGB light-emitting layer in advance. Has also been done.

Further, a technique has been proposed in which a dopant is transferred to a receiving layer by local overheating from a separately formed dopant supply sheet using a thermal head.

[0016]

As described above, the elements for forming the RGB sub-pixels are formed by various methods. None of the methods has high color purity, high resolution, high efficiency and long color mixing. It has not been possible to create a life with high yield and excellent productivity. With the most widely used mask evaporation method, it is easy to create a small, low-resolution display, but it is difficult to create a high-resolution, large-sized mask, and the temperature dependence of dimensions and mechanical rigidity Due to the above physical restrictions, it has been impossible to perform high-definition mask vapor deposition of approximately 120 PPI or more with high yield and excellent productivity in a substrate size of mass production. Further, in the ink jet method, it is advantageous to increase the size, but it is difficult to surely form fine ink droplets on the sub-pixel with an appropriate positional accuracy. In such a situation, as a technique for newly doping a high-definition and stable RGB light-emitting dopant on the sub-pixels, a thermal head is used to locally add a dopant supply sheet, and For moving a dopant to a receiving layer by thermal overheating (Japanese Patent Laid-Open No. 2001-15
No. 5859) has been proposed, but there are problems such as the difficulty of aligning the thermal head and the RGB sub-pixels.
Forming sub-pixels has been difficult.

[0017]

[Means for Solving the Problems] In view of such a situation,
The authors created light emitting elements corresponding to RGB sub-pixels with various resolutions and substrate sizes using various manufacturing methods, and examined the characteristics in detail, and as a result, by using a specific light emitting element or its manufacturing method. , 120 PPI
Even when using the above-mentioned high-definition and large-area substrate of 600 mm × 720 mm, it is possible to produce high color purity, high resolution, high efficiency, and long life with high yield and excellent productivity without color mixture. They have found the present invention and completed the present invention.

Specifically, in the method for manufacturing a light emitting device of the present invention, the step of controlling the current flow for each pixel on the substrate, the step of forming at least a dopant receiving layer on the pixel electrode, and the step of forming at least a dopant receiving layer on the electrode. In the dopant supply layer, the step of bringing the dopant supply layer having the dopant supply layer into close contact with the substrate having the dopant receiving layer and applying a voltage between the electrodes of the dopant supply sheet for each pixel And the step of moving the dopant of 1. into the dopant receiving layer.

Further, according to another manufacturing method of the present invention, a step of controlling electric conduction for each pixel on the substrate, a step of forming at least a dopant receiving layer on the pixel electrode, and a step of forming at least a dopant supply layer on the electrode. A step of bringing the formed dopant supply sheet into close contact with the substrate on which the dopant receiving layer is formed, and for each pixel, by conducting electricity between the electrodes of the dopant supply sheet, local heating is performed,
And a step of moving the dopant in the dopant supply layer into the dopant receiving layer.

In a preferred aspect of the present invention, the pixel density on the substrate is 120 PPI or more.

In a preferred embodiment of the present invention, the dopant receiving layer on the substrate is characterized by being coated with a coating material containing at least an organic polymer.

In a preferred embodiment of the present invention, the dopant receiving layer on the substrate is coated with a coating material containing at least an organic polymer and a low molecular weight charge transport material.

The light emitting device of the present invention is characterized by being manufactured by using the method for manufacturing a light emitting device described above.

Further, another light emitting element of the present invention is formed directly on the substrate or on the substrate with one or more layers interposed between the first electrode and the first electrode so as to face the first electrode. A light emitting device comprising: a second electrode; and an organic layer having a dopant formed between the first electrode and the second electrode, wherein the organic polymer layer is provided on the first electrode side. The dopant concentration is different from the dopant concentration on the second electrode side.

In a preferred embodiment of the present invention, the organic layer contains at least an organic polymer.

In a preferred embodiment of the present invention, the concentration of the dopant on the first electrode side of the organic layer is smaller than the dopant concentration on the second electrode side.

The dopant supply sheet of the present invention has at least an electrode formed in a sheet shape, and on the electrode,
It is characterized by having a dopant supply layer containing at least both a charge transport material and a light emitting dopant.

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION A light emitting device according to an embodiment of the present invention, a method for manufacturing the same, and a display device using a plurality of them will be described below.

The light emitting device according to the present embodiment has a step of controlling the energization of each pixel on a substrate, forms at least a light emitting dopant receiving layer on the pixel electrode, and a dopant supply layer on at least the electrode. The dopant supply sheet formed with is adhered to the substrate on which the dopant receiving layer is formed, and a voltage is applied between the pixel and the electrode of the dopant supply sheet for each pixel, thereby removing the dopant in the dopant supply layer from the dopant. The light-emitting element is characterized in that it is moved into a receptive layer, at least an electrode is formed thereafter, and light emission can be controlled by energization with the electrode of each pixel.

Here, the step of controlling the energization of each pixel refers to a TFT element in an active matrix driving TFT array substrate composed of TFTs, but is not limited to this.

The luminescent dopant receiving layer refers to a layer which can be in a doped state by incorporating a luminescent dopant contained in a dopant supply sheet described later into the film,
Various low molecular weight hole transport materials such as TPD and NPD, conjugated polymers such as polyparaphenylene vinylene derivatives and polyfluorene derivatives, derivatives thereof, copolymers, etc. can be widely used, but are not limited to these. Alternatively, non-conjugated polymers such as polyvinylcarbazole and general-purpose resins such as polycarbonate and acrylic can be used. Further, the light emitting dopant receiving layer can be preliminarily doped with a hole transporting material, an electron transporting material, a light emission assisting material, or the like.

As the dopant supply sheet, for example, a film substrate on which a uniform electrode is formed and a dopant supply layer is further formed can be used, but the substrate is not limited to the film. It is not limited to the above, and any material capable of supporting the electrode and the dopant supply layer may be used, and various base materials such as a plastic substrate, a glass substrate, and a metal foil can be used. Any electrode can be used as long as it can apply a voltage through the dopant supply layer, and various metal vapor deposition films can be widely used.

Here, the voltage application means that a voltage is applied between the pixel electrode on the substrate and the electrode of the dopant supply sheet, and an electric field is applied to the dopant receiving layer and the dopant supply layer on the pixel electrode to apply the dopant. Refers to moving by the action of an electric field.

After that, forming at least the electrodes means
This refers to forming a counter electrode of the pixel electrode, and as a light emitting element, electricity is emitted between this electrode and the pixel electrode. The dopant receiving layer to which the dopant has been transferred usually becomes the light emitting layer in the light emitting element, but a charge transport layer, a charge injection layer, etc. may be inserted before forming the electrode.

The term "dopant" as used herein means a luminescent dopant, and a fluorescent or phosphorescent dye or the like that normally takes on RGB emission can be widely used. However, the essence of the present invention does not necessarily need to emit light by itself, and it is sufficient that the presence or absence of light emission can be controlled by the presence or absence of doping of itself, for example, RG.
It is also conceivable to dope the emission assisting dopants that control the energy transfer to the respective light emitting materials B in correspondence with the respective RGB.

In addition, in the case where local heating is performed by energizing between the dopant supply sheet and the electrode for each pixel, it is preferable that both the dopant supply layer and the receiving layer have a hole transporting property. In the case of ITO or gold electrode having excellent hole injecting property, conversely, when both the dopant supply layer and the receiving layer have electron transporting property, MgAg electrode or Al having excellent electron injecting property.
It is preferable to use a Li electrode from the viewpoint of electric heating.

Further, the pixel in the present embodiment refers to a minimum unit capable of independently controlling energization, and means RGB sub-pixels. A pixel density of 120 PPI or higher means that such a sub-pixel has a linear density of 1
It means that more than 120 pixels are lined up in an inch, and if the linear density is higher than this in any direction, even if there is a portion whose linear density is lower than this in other directions,
It is referred to as the pixel density.

In the present invention, the organic polymer is a conjugated polymer such as polyparaphenylene vinylene derivative or polyfluorene derivative, its derivative or copolymer, non-conjugated polymer such as polyvinylcarbazole, general-purpose resin such as polycarbonate or acrylic. Means broadly.

In the present invention, the low molecular weight charge transport material is
It refers to a hole transporting material such as TPD and NPD, various oxadiazole derivatives and triazole derivatives, and an electron transporting material such as quinoline complex such as Alq.

In addition to these low molecular weight charge transport materials, the charge transport materials include conjugated polymers such as polyparaphenylene vinylene derivatives and polyfluorene derivatives and their derivatives,
Among non-conjugated polymers such as copolymers and polyvinylcarbazole, those having a charge transporting ability are pointed out.

As described above, the main part of the present invention is that the dopant is moved to the dopant receiving layer formed on the substrate from the separately prepared dopant supply layer for each pixel,
To obtain a specific light emitting pixel array.

Generally, in the case of a display having pixels of three primary colors of RGB, a delta arrangement is often used when placing emphasis on moving image display, and a stripe arrangement is often used when placing emphasis on character display, but many other arrangements have been proposed in recent years. The current situation is that the optimal arrangement varies depending on the product. In the mask vapor deposition method that is generally widely used, it is necessary to deal with such various pixel arrays by individual masks and processes, whereas according to the present invention, voltage application or A flexible array can be easily realized by controlling energization. Specifically, in the case of an RGB pixel arrangement, first, in a state in which the R dopant supply sheet is first brought into close contact, a voltage is applied or energized only at a portion which should become an R pixel, and then in a state in which a G dopant supply sheet is brought into close contact. Then, by applying a voltage or energizing only a portion which should be a G pixel and finally applying a voltage or energizing only a portion which should be a B pixel in a state where the B dopant supply sheet is closely adhered, the voltage of each pixel is A free arrangement can be easily realized only by the signal pattern of application or energization control.

In the present invention, the other parts of the light emitting element can be widely used with ordinary materials and constitutions and manufacturing methods. Specifically, a configuration in which an ITO electrode is used as a transparent anode, a cathode is provided after providing a light emitting functional layer, and light is emitted from the transparent anode side is widely used. Also in the present invention, a transparent structure is provided on a TFT array substrate. IT as the anode
An O electrode can be provided and used. Here, the light emitting functional layer means not only the light emitting layer which actually emits light but also the hole transport layer /
It is a general term for various structures such as an electron-transporting light-emitting layer, a hole-transporting light-emitting layer / electron-transporting layer, a hole-transporting layer / light-emitting layer / electron-transporting layer, and further includes a hole-injecting layer on the anode side, A structure having an electron injection layer on the cathode side is also widely used.

In the present invention, when the light emitting layer is referred to here,
The point is to use the above method.

The cathode in the present invention is, in addition to the MgAg alloy proposed by Tang et al.
A laminated cathode of a LiF ultra-thin film and Al and a laminated cathode of a Li thin film and Al can be widely used.

Next, more detailed description will be given based on specific examples, but the embodiment of the present invention is not limited to these specific examples.

(Embodiment 1) A light emitting device, a method for manufacturing the same, and a display device, which is an assembly of the light emitting devices, of Embodiment 1 of the present invention will be described in detail below with reference to FIG.

As a substrate, an active matrix TF having a TFT group for driving an active matrix pixel
The T array substrate 101 was used. A transparent anode 102 is provided on the TFT array substrate corresponding to each pixel.
The transparent anode is an ITO film having a thickness of about 150 nm. TFT
The array substrate was washed by a conventional method and then subjected to oxygen plasma treatment, and then a polyvinyl carbazole (PVK) layer was applied and formed from a toluene solution as the dopant receiving layer 103. Film thickness is 100 nm after drying at 120 ° C for 1 hour
So that

On the other hand, the dopant supply sheet is the base material 10.
A commercially available PET film is used as 6, and the electrode 1 is formed on the PET film.
Aluminum was vapor-deposited on the entire surface to a thickness of 100 nm as 05, and as the dopant supply layer 104, the dopant supply layer 104 was applied and formed from a coating material in which a light emitting dopant was dissolved in toluene together with PVK. The concentration of the dopant is 5% by weight based on the total solid content, and the film thickness is 60
It was adjusted to 100 nm after vacuum drying at 30 ° C. for 30 minutes.

The dopant supply sheet thus prepared is arranged on the TFT array substrate 101 so that the dopant supply layer 104 and the dopant receiving layer 103 are in close contact with each other, and the contact jig 110 applies uniform pressure. The contact surface 108 was evenly adhered.

Further, the transparent anode 102 for each pixel and the electrode 105 were energized, and the dopant was moved by local heating for 30 minutes in a nitrogen atmosphere.

In this way, after the first one-color dopant is transferred, the light-emitting dopants of the other two colors are similarly dissolved in PVK, and a dopant supply sheet is also used to closely adhere the same. -During the electric current, the dopant was moved.

In this experiment, RGB three colors of dopant were transferred, and commercially available Nile red, coumarin 540 and tetrephenyl butadiene were used as the dopants.

After the dopant transfer is completed in this way, bathocuproine (BCP) is subsequently formed as an electron transport layer.
Was deposited to a uniform thickness of 10 nm by vacuum deposition, and Alq was deposited to a uniform thickness of 20 nm by vacuum deposition. The cathode was also formed by the vacuum deposition method to form Li to 10 nm and then Al to 100 nm.
Formed. The dopant concentration of the dopant receiving layer may be different on the side where the dopant supply sheet is in close contact, that is, on the cathode side (electron transport layer side) and the anode side. If the dopant concentration on the cathode side is lower than the dopant concentration on the anode side, electrons are injected and transported smoothly.

The light emitting device sample thus obtained is
The TFT driven RGB pixels are arranged side by side at a pitch of 50 μm, and the substrate size is 600 mm × 720 mm.
Is.

The evaluation is CS-100 manufactured by Minolta Co., Ltd.
0 was used to evaluate the color purity of each of the RGB colors and the emission brightness, and the presence or absence of black spots, brightness unevenness, and color unevenness was also evaluated.

The initial evaluation was carried out 12 hours after the glass lid was adhered after vapor deposition of the device in a normal laboratory environment of room temperature and normal humidity, and the luminous efficiency (cd / A) and 1000 (cd / m ² ) were emitted. Drive voltage was evaluated. The initial brightness is 1000
At a current value of (cd / m ² ), a continuous light emission test was performed by driving at a constant DC current in a normal laboratory environment of normal temperature and normal humidity. From this test, the time when the brightness reached to half (500 cd / m ² ) was evaluated as the life. All driving was performed through the driving TFT for each pixel provided in the TFT array substrate.

The luminescence image quality such as uneven brightness and black spots (non-luminous portion) was observed with a 50 × optical microscope.

The results of these evaluations are shown in (Table 1).

[0060]

[Table 1]

As a result, according to this embodiment, 600 mm
R, G, and B pixels could be formed over the entire area of the × 720 mm substrate without color mixing, color unevenness, and brightness unevenness, and RGB pixels could be formed with extremely high yield and good productivity. In addition, the luminous efficiency of each pixel of each color of RGB was higher than that in the case of the conventional inkjet film formation or the mask co-evaporation method, and the long life was obtained.

(Example 2) Polyvinylcarbazole (PVK) used as the dopant receiving layer 103 in Example 1
A light emitting device sample was prepared in the same manner as in Example 1 except that the NPD layer was formed to have the same film thickness by a vacuum vapor deposition method and used instead of the layer.

The results are shown in (Table 1).

(Example 3) Example 3 was carried out except that 20% by weight of TPD was included as a hole transport material together with PVK instead of using polybonylcarbazole (PVK) as the sole layer as the dopant receiving layer 103 in Example 1. Example 1
A light emitting device sample was prepared in the same manner as in.

(Comparative Example 1) Instead of using polybonylcarbazole (PVK) as a single layer as the dopant receiving layer 103 in Example 1, an ink jet composition was prepared by using a coating material containing PVK in an amount of 1 wt% in advance. A light emitting device sample was prepared in the same manner as in Example 1 except that the film was formed and the electron transport layer was formed without performing the dopant transfer step.

The results are shown in (Table 1).

Comparative Example 2 Instead of using NPD as the sole layer as the dopant receiving layer 103 in Example 2, N
A light emitting device sample was prepared in the same manner as in Example 1 except that 1% by weight of a light emitting dopant was co-deposited with PD and mask co-evaporation was performed to form the electron transport layer without performing the dopant transfer step.

The results are shown in (Table 1).

[0069]

As described above, the light emitting device according to the present invention, the method for manufacturing the same and the display device using them have been described. However, the present invention has at least a step capable of controlling the energization of each pixel on the substrate. Forming a light-emitting dopant receiving layer on the pixel electrode, and separately adhering a dopant supply sheet having a dopant supply layer formed on at least the electrode onto the substrate having the dopant receiving layer formed thereon to supply the dopant to each pixel. By applying a voltage between the electrodes of the sheet, the dopant in the dopant supply layer is moved into the dopant receiving layer, and then at least an electrode is formed, and an electric current is applied between the electrodes for each pixel. According to the present embodiment, the light emitting element is characterized by being capable of controlling light emission.
R, G, and B pixels could be formed over the entire area of the mm × 720 mm substrate without color mixture, color unevenness, and brightness unevenness, and the RGB pixels could be formed with a very high yield and good productivity. In addition, the luminous efficiency of each pixel of each color of RGB was higher than that in the case of the conventional inkjet film formation or the mask co-evaporation method, and the long life was obtained.

[Brief description of drawings]

FIG. 1 is a diagram showing a method for manufacturing a light emitting device of Example 1.

[Explanation of symbols]

101 TFT array substrate 102 transparent anode 103 dopant receiving layer 104 dopant supply layer 105 electrode 106 base material 107 Energizing current 108 Contact surface 109 External power supply 110 adhesion jig

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05B 33/14 H05B 33/14 A (72) Inventor Hisanori Sugiura 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial In-house F-term (reference) 3K007 AB03 AB04 AB11 AB17 AB18 BA06 BB07 CB01 DA01 DB03 EB00 FA01 5C094 AA05 AA08 AA10 AA31 AA43 AA48 BA03 BA12 BA27 CA19 CA24 DA13 EA04 EA05 FA01 FA02 A05 A01 A05 A01 A05 A01 A12 A05 A01 A02 A17 A02 HH01 HH20 KK05 KK10

Claims (10)

[Claims] 1. A step of controlling energization for each pixel on a substrate, a step of forming at least a dopant receiving layer on the pixel electrode, a dopant supply sheet having at least a dopant supply layer formed on the electrode, A step of adhering it to the substrate on which the receptive layer is formed, and a step of moving the dopant in the dopant receptive layer into the dopant receptive layer by applying a voltage between the electrodes of the dopant replenishing sheet for each pixel. A method for manufacturing a light emitting device, comprising: 2. A step of controlling energization for each pixel on a substrate, a step of forming at least a dopant receiving layer on the pixel electrode, a dopant supply sheet having at least a dopant supply layer formed on an electrode, The step of closely contacting with the substrate on which the receptive layer is formed, and the current in each pixel is applied to the electrode of the dopant supply sheet to locally heat the dopant in the dopant supply layer to remove the dopant in the dopant supply layer. And a step of moving it inside. 3. The method for manufacturing a light emitting device according to claim 1, wherein the pixel density on the substrate is 120 PPI or more. 4. The method for manufacturing a light emitting device according to claim 1, wherein the dopant receiving layer on the substrate is coated with a coating material containing at least an organic polymer. 5. The light emitting device according to claim 1, wherein the dopant receiving layer on the substrate is coated with a coating material containing at least an organic polymer and a low molecular weight charge transport material. Manufacturing method. 6. A light emitting device manufactured by using the method for manufacturing a light emitting device according to claim 1. 7. A first electrode formed directly on the substrate or via one or more layers on the substrate, a second electrode formed opposite to the first electrode, and the first electrode. A light emitting device comprising an organic layer having a dopant formed between a first electrode and a second electrode, the concentration of the dopant on the first electrode side of the organic layer and the second electrode. A light-emitting device having different concentrations of the dopant on the side. 8. The light emitting device according to claim 7, wherein the organic layer contains at least an organic polymer. 9. The light emitting device according to claim 7, wherein the dopant concentration on the first electrode side of the organic layer is lower than the dopant concentration on the second electrode side. 10. A dopant supply sheet comprising at least a sheet-shaped electrode, and a dopant supply layer containing at least both a charge transport material and a light emitting dopant on the electrode.