JP2006244901A - Manufacturing method and manufacturing device of spontaneous light emitting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of spontaneous light emitting element capable of improving weathering property of the spontaneous light emitting element. <P>SOLUTION: The manufacturing method of the spontaneous light emitting element, formed by forming a lower electrode on a substrate, laminating a plurality of film layers including light emitting layer on the lower electrode, and forming an upper electrode on the film layers, comprises a first layer forming process forming the first layer on the surface of the lower electrode in vacuum, a heating process applying a heat treatment to a substrate on which the first layer is formed in vacuum, and a second layer forming process forming the second layer on the surface of the first layer in vacuum after the heating process. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a self-luminous element and an apparatus for manufacturing the same.

  Mobile phone, in-vehicle monitor, home appliance operation monitor, dot matrix display panel such as PC and TV, fixed display for clock and advertising panel, scanner and printer light source, lighting, liquid crystal backlight, etc. Self-luminous elements are used in display units of information equipment. There are display elements with self-luminous elements arranged in a dot matrix, display parts with icon parts (fixed display parts), flat or spherical lighting fixtures, etc. There are various.

  A typical example of such a self-light emitting element is an organic EL element. The organic EL element is also called an organic electroluminescence element, an organic EL (OEL) device, an organic light emitting diode (OLED) device, a self-emitting element, or an electroluminescent light source, and uses a high molecular organic material, a low molecular organic material, or the like as a material. There is something. Hereinafter, a device having a light emitting layer sandwiched between upper and lower electrodes is referred to as an “organic EL device”.

  The organic EL element has a structure in which a film formation layer is sandwiched between an anode (anode, hole injection electrode) and a cathode (cathode, electron injection electrode). By applying a voltage to both electrodes, holes injected and transported from the anode into the film formation layer and electrons injected and transported from the cathode into the film formation layer are one of the film formation layers. The light emitting material that forms the light emitting layer is excited by this recombination, and light emission is obtained in the process of transition from the excited state to the ground state.

  In order to pass an electric current through the film-forming layer constituting the organic EL element, the film-forming layer must be formed in a thin state of nano order. When such a thin film is formed, there is a problem that a short circuit and a leakage current are likely to occur between the upper and lower electrodes due to the presence of foreign matters such as dust. When a self-luminous element is used in the display, the leakage current causes a reduction in display quality such as a black stroke and uneven brightness due to the generation of the leakage current, and contributes to light emission such as unnecessary heat generation of the organic EL element. Energy consumption does not occur, and the luminous efficiency decreases.

  In order to prevent a short circuit between electrodes of an organic EL element and a leakage current, a melt method in which the first film-forming layer in contact with the lower electrode is heat-treated (hereinafter, a technique of heat-treating a film-forming layer constituting the organic EL element) Is defined as “melt method” (see Patent Document 1 below). Heat treatment of the deposited layer formed by vacuum deposition using the melt method prevents foreign currents and protrusions formed on the lower electrode from occurring, thereby preventing leakage current between the electrodes. .

JP 2001-68272 A

  However, the conventional technique as described in Patent Document 1 is capable of embedding foreign matter and the like attached on the lower electrode. However, in order to perform the heating process by the melt method in a nitrogen atmosphere at atmospheric pressure, There is a problem that foreign matter or the like easily adheres to the first film-forming layer in the process and the process before and after the heating process.

  In addition, the conventional technology as described in Patent Document 1 suggests a means for preventing leakage current between the upper and lower electrodes by the melt method and solving erroneous light emission, display failure, etc. of the organic EL element. It is possible to solve problems such as a decrease in the lifetime of the organic EL element, a decrease in weather resistance due to the deterioration of the element, and a voltage increase caused by a decrease in weather resistance only by the heating process of the first film-forming layer by the method. Can not.

  In view of this, the present invention has an example of dealing with such a problem. That is, it is an object of the present invention to provide a method and an apparatus for manufacturing a self-luminous element that can extend the life of the self-luminous element typified by an organic EL element and improve weather resistance.

  In order to achieve the above object, a method and an apparatus for manufacturing a self-luminous element according to the present invention include at least the configurations according to the following independent claims.

  According to a first aspect of the present invention, there is provided a method for manufacturing a self-luminous element comprising: forming a lower electrode on a substrate; and laminating a plurality of film-forming layers including a light-emitting layer on the lower electrode; In the element manufacturing method, a first layer film forming step for forming a first film forming layer on the surface of the lower electrode in a vacuum state, and a substrate on which the first film forming layer is formed are vacuumed. A heating process for heat treatment in a state, and a second layer deposition process for depositing a second deposition layer in a vacuum state on the surface of the first deposition layer after the heating process. It is characterized by.

  According to a fifth aspect of the present invention, there is provided a self-luminous element manufacturing apparatus comprising: a lower electrode formed on a substrate; and a plurality of film-forming layers including a light-emitting layer formed on the lower electrode; In a device manufacturing apparatus, a first film formation chamber for forming a first film formation layer on a surface of a lower electrode in a vacuum state and a substrate on which the first film formation layer is formed are in a vacuum state. And a second film formation chamber for forming a second film formation layer in a vacuum state on the surface of the first film formation layer.

  FIG. 1 is an explanatory diagram of an organic EL element that is one of the self-light-emitting elements shown in FIG. 1 and a schematic diagram of a film forming apparatus for an organic EL element that is one of the self-light-emitting elements shown in FIG. Based on Although the structure of the organic EL element applied to this invention, the material to be used, a manufacturing method, and a manufacturing apparatus are described below, it is not restricted to this, The effect which an organic EL element show | plays, and the summary of invention is shown. Any design change is included in the scope of the present embodiment as long as it does not deviate.

  In the explanatory diagram of the organic EL element shown in FIG. 1, one organic EL panel 3 is configured by forming a plurality of organic EL elements 1 on a substrate 2. Here, the organic EL element 1 may be formed directly on the substrate 2, a TFT, a color filter, or the like may be inserted between the organic EL element 1 and the substrate 2. A plurality may be formed.

  In the organic EL element 1, a lower electrode 11 and a first film-forming layer 12 are formed on the surface of the lower electrode 11. The first film-forming layer 12 is subjected to a heating process by the melt method described below after film formation. A second film-forming layer 13, a third film-forming layer 14, and an upper electrode 15 are sequentially stacked on the first film-forming layer 12. Although not shown in the figure, an emission film may be formed by forming an insulating film between the lower electrodes 11. In addition, although not shown in the figure, the organic EL element 2 may be sealed after the upper electrode 15 is stacked. Insulating film and sealing are known techniques and will not be described in detail. However, the material and shape of the insulating film and the type of sealing process are not particularly limited, such as airtight sealing, film sealing, and solid sealing. .

  The substrate 2 is not particularly limited in shape, such as a flat plate shape, a film shape, and a spherical shape, and it does not matter whether the material is particularly transparent, such as glass, plastic, quartz, or metal. Moreover, as what has transparency, glass and a transparent plastic are preferable.

  One of the lower electrode 11 and the upper electrode 15 is set as a cathode and the other is set as an anode. In this case, the anode is preferably made of a material having a high work function, such as a metal film such as chromium (Cr), molybdenum (Mo), nickel (Ni), platinum (Pt), or a metal oxide film such as ITO or IZO. The transparent conductive film is used. The cathode is preferably made of a material having a low work function. In particular, alkali metals (Li, Na, K, Rb, Cs), alkaline earth metals (Be, Mg, Ca, Sr, Ba), rare earth metals are used. A metal having a low work function, a compound thereof, or an alloy containing them can be used. Further, when both the lower electrode 11 and the upper electrode 15 are made of a transmissive material, a reflection film may be provided on the electrode side opposite to the light emission side. Alternatively, the lower electrode 11 and the upper electrode 15 may be made of a transmissive material, and a reflective film may be provided between the substrate 2 and the lower electrode 11 to form a top light emitting element.

  A lower electrode 11 is formed on the substrate 2 as a thin film by a method such as vapor deposition or sputtering, and is patterned into a desired shape by photolithography or the like. The plurality of film formation layers are sandwiched between a pair of electrodes of the lower electrode 11 and the upper electrode 15, and several upper electrodes are formed so as to be orthogonal to the lower electrodes formed in several stripes. 14 and the upper electrode 15 form a matrix. The upper electrode 15 forms a thin film by a method such as vapor deposition or sputtering.

  The organic EL element 1 is a combination in which the first layer 12 is a hole transport layer, the second layer 13 is a light emitting layer, and the third layer 14 is an electron transport layer. May be formed. At this time, the lower electrode 1 is a positive electrode and the upper electrode 15 is a negative electrode. In addition, the lower electrode 11 or the upper electrode 15 is laminated in a positive / negative state, the first film-forming layer 12 is an electron transport layer, the second film-forming layer 13 is a light-emitting layer, and the third layer Alternatively, the organic EL element 1 may be configured such that the film forming layer 14 is a hole transport layer. Furthermore, each of the light emitting layer, the hole transport layer, and the electron transport layer may be provided by laminating not only one layer but also a plurality of layers. For the hole transport layer and the electron transport layer, either layer may be omitted, Both layers may be omitted. It is also possible to insert a film-forming layer having functions such as hole injection, electron injection, hole block, and electron block depending on the application.

  The hole transport layer only needs to have a function of high hole mobility, and any material can be selected and used from conventionally known compounds. Specific examples include polyphylline compounds such as copper phthalocyanine, aromatic tertiary amines such as 4,4′-bis [N- (1-naphthyl) -N-phenylamino] -biphenyl (NPB), 4- (di- Organic materials such as stilbene compounds such as p-tolylamino) -4 ′-[4- (di-p-tolylamino) styryl] stilbenzene, triazole derivatives and styrylamine compounds are used. In addition, a polymer dispersion material in which a low molecular weight organic material for hole transport is dispersed in a polymer such as polycarbonate, or a polyaniline derivative such as PEDOT that is a polymer material can also be used.

A known light emitting material can be used for the light emitting layer. Specific examples include aromatic dimethylidin compounds such as 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi), 1,4- Styrylbenzene compounds such as bis (2-methylstyryl) benzene, triazole derivatives such as 3- (4-biphenyl) -4-phenyl-5-t-butylphenyl-1,2,4-triazole (TAZ), anthraquinone derivatives Fluorescent organic materials such as fluorenol derivatives, fluorescent organometallic compounds such as (8-hydroxyquinolinato) aluminum complex (Alq ₃ ), polyparafinylene vinylene (PPV), polyaniline, polyfluorene, polyvinylcarbazole ( Phosphorescence from triplet excitons such as high molecular weight materials such as PVK), platinum complexes and iridium complexes Organic materials that can be used for light emission can be used. It may be composed only of the light emitting material as described above, or may contain a hole transport material, an electron transport material, an additive (donor, acceptor, etc.) or a light emitting dopant, and these are polymer materials. Or you may disperse | distribute in an inorganic material.

  The electron transport layer only needs to have a function of transmitting electrons injected from the cathode to the light emitting layer, and any material can be selected from conventionally known compounds. Specific examples include organic materials such as nitro-substituted fluorenone derivatives and anthraquinodimethane derivatives, metal complexes of 8-quinolinol derivatives, metal phthalocyanines, and the like.

  The hole transport layer, the light emitting layer, and the electron transport layer are not limited to the above-mentioned materials, and can be selected as appropriate, such as a spin coating method, a coating method such as a dipping method, an ink jet method, and a screen printing method. It can be formed by a wet process such as a printing method or a dry process such as a vapor deposition method or a laser transfer method (LITI).

  FIG. 2 shows an example of a cluster-type (single-wafer type) manufacturing apparatus that realizes the above-described method for manufacturing an organic EL element. The process and configuration of the organic EL element manufacturing method and manufacturing apparatus will be described. This manufacturing apparatus is configured to include two film forming apparatuses 20 and 30 and a sealing apparatus 40. A substrate transfer chamber 51 is connected to the film forming apparatus 20 on the carry-in side, and the film forming apparatuses 20 and 30 are connected. Further, delivery chambers 52 and 53 are connected between the sealing device 40 and a discharge chamber 54 on the transfer chamber side of the sealing device 40, respectively. Reference numerals other than those in FIG. 2 are the same as those used in FIG.

  The film forming apparatus 20 is provided with a vacuum transfer chamber 21 in the center, a transfer robot 22 is provided in the vacuum transfer chamber 21, and a plurality of film forming chambers 23, 24, and 25 are heated around the substrate. A heating chamber 26 for performing the process is provided. In the film forming apparatus 30, similarly to the film forming apparatus 20, a vacuum transfer chamber 31 is disposed in the center, a transfer robot 32 is provided in the vacuum transfer chamber 31, and a plurality of film forming chambers 33 are disposed around the vacuum transfer chamber 31. , 34, 35, and 36 are provided. In addition, a transfer chamber 41 is provided in the center of the sealing device 40, and a transfer robot 42 is provided in the transfer chamber 41, and a sealing substrate transfer chamber 43, a sealing substrate stock chamber 44, and a paste are provided around it. A common room 45 and an examination room 46 are provided. And each film-forming chamber 23, 24, 25, 33, 34, 35, 36, the heating chamber 26, the sealing substrate transfer chamber 43, the sealing substrate stock chamber 44, the entrance of the bonding chamber 45, the substrate transfer chamber 51, A vacuum gate G is provided at the entrance / exit of the delivery chambers 52 and 53, the sealing substrate transfer chamber 43, and the discharge chamber 54.

According to such a manufacturing apparatus, the substrate 2 having been subjected to the pretreatment process and the cleaning process (the substrate 2 with the lower electrode 11) is carried into the substrate transfer chamber 51 for transfer in the vacuum transfer chamber 21 of the film forming apparatus 20. By the operation of the robot 22, the substrate 2 is moved to the film formation chamber 23 (the first film formation chamber in which the first film formation layer 12 is formed). Further, the first substrate transfer process of the present invention is not limited to using the transfer robot 22 but is an in-line manufacturing method in which the transfer is performed by a belt conveyor or the like without using the transfer robot 22. It doesn't matter. The inside of the film forming chamber 23 is set to a reduced pressure or a vacuum state of 10 ⁻² to 10 ⁻⁶ Pa, and the first film forming layer 12 is formed on the lower electrode 11 of the substrate 2 by resistance heating vapor deposition ( First layer deposition step).

Next, the substrate 2 is transferred from the film formation chamber 23 to the heating chamber 26 via the substrate transfer chamber 21 by the operation of the transfer robot 22 (first substrate transfer step). At this time, the inside of the substrate transfer chamber 21, the heating chamber 26, and the film forming chamber 23 is set to a reduced pressure or a vacuum state of 10 ⁻² to 10 ⁻⁶ Pa.

  In the heating chamber 26, heating is performed at a temperature not lower than the glass transition point and not higher than the melting point of the organic material forming the first film formation layer 12 (heating step). In the heating process, the substrate 2 is fixed to a substrate holder or the like in a heating chamber 26 in a vacuum atmosphere, and a heating temperature is applied to the substrate 2. As the heating temperature, a heating means is applied for a certain time at a heating temperature not lower than the glass transition point and not higher than the melting point of the organic material constituting the first layer. For example, in the case of an organic material having a glass transition point of 95 ° C., a heating means is added at a temperature of about 125 ° C. for a heating time of about 20 minutes. The heating means is performed by a method of heating the substrate with a heater, a method of heating with a halide lamp or the like.

After the heating step, the substrate 2 is moved from the heating chamber 26 to the film formation chamber 24 (second film formation chamber for forming the second film formation layer 13) through the substrate transfer chamber 21 by the operation of the transfer robot 22. (Second substrate transfer step). At this time, the inside of the heating chamber 26, the substrate transfer chamber 21, and the film forming chamber 24 is set to a reduced pressure or a vacuum state of 10 ⁻² to 10 ⁻⁶ Pa. Further, the second substrate transfer process of the present invention is not limited to using the transfer robot 22 but is an in-line manufacturing method in which the transfer is performed by a belt conveyor or the like without using the transfer robot 22. It doesn't matter. Furthermore, in the figure, the first substrate transfer step and the second substrate transfer step are described using the same substrate transfer chamber 21, but the present invention is not limited to this, and different substrate transfer chambers may be used.

Next, the second film-forming layer 13 is formed on the first film-forming layer 12 by resistance heating vapor deposition in the film-forming chamber 24 set to a vacuum state of 10 ⁻² to 10 ⁻⁶ Pa (first Second layer deposition step). Further, the substrate 2 is transferred from the transfer robot 22 on the film forming apparatus 20 side to the transfer robot 32 on the film forming apparatus 30 side in the transfer chamber 52, and the film forming chambers 33, 34, In 35 and 36, the third film-forming layer 14 and the film-forming layer for stacking more layers and the upper electrode 15 are formed in this order.

  After film formation of the upper electrode 15 is performed, the substrate 2 is transferred to the sealing device 40 through the delivery chamber 53. In the sealing device 40, first, the substrate 2 is transported to the inspection chamber 46, and the light emission characteristics of the organic EL element 1 formed on the substrate 2 are measured to confirm whether there is a defect such as chromaticity deviation. Is done. Further, the substrate 2 is transferred from the sealing substrate transfer chamber 43, and the sealing substrate stored in the sealing substrate stock chamber 44 and the substrate 2 that has been inspected in the inspection chamber 46 are transferred in the transfer chamber 40. The robot 42 is transported to the bonding chamber 45, where the two are bonded via an adhesive. The organic EL panel that has been bonded together is carried out of the apparatus through the discharge chamber 54.

In the embodiment of the present invention and the examples described below, the vacuum state means the pressure in the film forming chambers 23, 24, 25, 33, 34, 35 and 36, the heating chamber 26, and the vacuum transfer chambers 21, 31. Is in the range of 10 ⁻² to 10 ⁻⁶ Pa. Further, the film formation is shown as an example in which the vacuum deposition using the resistance heating method is performed in the film formation chambers 23, 24, 25, 33, 34, 35, and 36, but is not limited thereto. It is also possible to employ physical vapor deposition such as EB vapor deposition and sputter vapor deposition, chemical vapor deposition such as spin coating, coating, printing, and CVD.

  In the embodiment of the present invention, the cluster type manufacturing apparatus has been described. However, an inline type manufacturing apparatus may be used, and the form of the organic EL element is not particularly limited. For example, a bottom emission method in which light is extracted from the substrate side or a top emission method in which light is extracted from the opposite side of the substrate may be used, and a driving method, an active driving method, or a passive driving method may be used.

<Example 1> An ITO film is formed as a lower electrode on a glass substrate to a film thickness of 110 nm by sputtering. Next, a photoresist AZ6112 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was patterned on the ITO with a width of 2 mm. The substrate on which the resist was patterned was immersed in a mixed solution of ferric chloride aqueous solution and hydrochloric acid. Thereby, the portion of the ITO film not covered with the resist was etched. The etched glass substrate was immersed in acetone. As a result, the resist was removed, and a stripe pattern of the ITO electrode provided with a width of 2 mm was formed.

The glass substrate on which the ITO electrode stripe pattern is formed is washed with a surfactant. Thereafter, UV ozone cleaning was performed for 10 minutes. The substrate that had been subjected to UV ozone cleaning was put into a film forming chamber in the manufacturing apparatus. Using resistance heating vapor deposition in a film formation chamber whose pressure is reduced to 10 ⁻⁴ Pa, N-phenyl-p-phenylenediamine (PPD) is formed as a first film formation layer at a film formation rate of 0.16 nm per second. The film was formed to a thickness of 20 nm.

Next, the substrate on which the PPD film was formed was transferred to the heating chamber via the substrate transfer chamber while maintaining a vacuum state of 10 ⁻⁴ Pa. The substrate was fixed in a heating chamber, and the substrate was heated at 180 ° C. for 20 minutes at a temperature equal to or higher than the glass transition point (Tg = 150 ° C.) of the PPD using a heater to perform a heating process. Next, the substrate is transferred to the second film formation chamber via the transfer chamber while maintaining a vacuum state of 10 ⁻⁴ Pa, and NPB is formed as a second film formation layer on the PPD at a deposition rate of 2.0 nm per second. Was deposited to a thickness of 10 nm.

Next, while maintaining the vacuum state of 10 ⁻⁴ Pa, the substrate after the NPB film formation is transferred to the film formation chamber via the transfer chamber, and Alq ₃ of the light emitting layer / electron transport layer is formed at a rate of 0.5 nm per second. The film was formed at a speed until the thickness reached 60 nm. Next, the substrate after the Alq ₃ film formation was transferred to the next film formation chamber through the transfer chamber, and Li ₂ O of the electron injection layer was formed to a thickness of 0.7 nm at a film formation rate of 0.3 nm per second. The film was formed until Further, the substrate after Li ₂ O film formation is transferred to the film formation chamber of the upper electrode through the substrate transfer chamber, a shadow mask for the upper electrode is applied, and aluminum is vacuum-formed to a thickness of 100 nm at a rate of 1 nm per second. Filmed. At this time, the aluminum film was formed into a 2 mm wide stripe in a direction orthogonal to the ITO film stripe. Finally, glass was sealed to form an example sample.

  Comparative Example 1 An organic EL element as a comparative example will be described. An organic EL element as a comparative example was prepared as a comparative sample by performing the heating step performed on the PPD of the organic EL element described above as Example 1 in an atmospheric pressure nitrogen atmosphere. That is, the heating process was performed at atmospheric pressure in the heating chamber under a nitrogen atmosphere.

  <Evaluation> The example sample and the comparative sample were compared and evaluated by the following weather resistance test and half-life test. The weather resistance test was stored at a temperature of 63 ° C., and the voltage increase of the sample was examined using an organic EL element weather resistance tester manufactured by SUNTEST. The weather resistance test results of the example sample and the comparative sample are shown in FIG. From FIG. 3, although the same element configuration was obtained, the example sample suppressed the voltage rise lower than the comparative sample, and the result was that the weather resistance of the organic EL element was excellent.

  In the half-life test, the ratio of the residual luminance during the lighting time of the sample at 85 ° C. was measured and examined. FIG. 4 shows the half-life measurement results of the example sample and the comparative sample. From FIG. 4, the results were that the life of the organic EL device was longer in the example sample than in the comparative sample, although the device configuration was the same. Therefore, from the comparison results of FIG. 3 and FIG. 4, it was found that the example samples were superior in terms of weather resistance and life characteristics to the comparative samples.

  As described above, according to the embodiment or example of the present invention, the lower electrode is formed on the substrate, and the upper electrode is formed on the plurality of deposited layers including the light emitting layer on the lower electrode. In the light emitting element manufacturing method or manufacturing apparatus, even if a film formation defect such as the lower electrode or a foreign matter adheres, the formation of a film formation defect portion can be prevented. In addition, it is possible to provide a manufacturing method and a manufacturing apparatus of a self-luminous element that can improve weather resistance and extend the life.

Explanatory drawing of organic EL element which is one of self-luminous elements Schematic diagram of organic EL element film-forming device, which is one of the self-luminous elements Results of weathering resistance test of Example sample and Comparative sample in Example 1 Results of half-life test of Example sample and Comparative sample in Example 1

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL element 2 ... Board | substrate 3 ... Organic EL panel 20 ... Film-forming apparatus 26 ... Heating chamber 21, 31 ... Transfer chamber

Claims (7)

In a method for manufacturing a self-luminous element in which a lower electrode is formed on a substrate and a plurality of film-forming layers including a light emitting layer are stacked on the lower electrode, the upper electrode is formed.
A first layer film forming step of forming a first film forming layer in a vacuum state on the surface of the lower electrode;
A heating step of heat-treating the substrate on which the first film-forming layer is formed in a vacuum state;
A second-layer film-forming step of forming a second-layer film-forming layer in a vacuum state on the surface of the first-layer film-forming layer after the heating step. Method. 2. The method for manufacturing a self-luminous element according to claim 1, further comprising a first substrate transfer step of transferring the substrate in a vacuum state between the first layer film forming step and the heating step. 2. The method for manufacturing a self-luminous element according to claim 1, further comprising a second substrate transfer step of transferring the substrate in a vacuum state between the heating step and the second layer film forming step. The method for manufacturing a self-luminous element according to claim 1, wherein the self-luminous element is an organic EL element. In a self-luminous element manufacturing apparatus in which a lower electrode is formed on a substrate and a plurality of film-forming layers including a light emitting layer are stacked on the lower electrode, and an upper electrode is formed.
A first deposition chamber for depositing a first deposition layer on the surface of the lower electrode in a vacuum state;
A heating chamber that heat-treats the substrate on which the first film-forming layer is formed in a vacuum state;
And a second film formation chamber for forming a second film formation layer in a vacuum state on the surface of the first film formation layer. The self-luminous element manufacturing apparatus according to claim 5, further comprising a substrate transfer chamber for transferring the substrate in a vacuum state. The self-luminous element manufacturing apparatus according to claim 5, wherein the self-luminous element is an organic EL element.

Images