JP2003068918A - Package for semiconductor element storage - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that a semiconductor is thermally broken since heat that the semiconductor element generates when operating can not efficiently be radiated to the outside. SOLUTION: A package for semiconductor element storage comprises a base body 1, a frame-shaped insulator 2 having a wiring layer 6, and a lid body 3; and the frame-shaped insulator 2 is made of a sintered body containing a 25 to 80 wt.% Si component in terms of SiO2 , a 15 to 70 wt.% Ba component in terms of BaO, a 1.5 to 5 wt.% B component in terms of B2 O3 , a 1 to 30 wt.% Al component in terms of Al2 O3 , and a 0 to 30 wt.% Ca component in terms of CaO, and the base body is formed of tungsten and copper and has a three-layered structure having upper and lower layers 1b and 1d of 35 to 65 wt.% tungsten and 35 to 65 wt.% copper on both top and reverse surfaces of an intermediate layer 1c composed of 70 to 90 wt.% tungsten and 10 to 30 wt.% copper.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element such as an LSI (Large Scale Integrated Circuit Element) or an optical semiconductor element.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element accommodating package for accommodating a semiconductor element is made of a metal material such as a copper-tungsten alloy or a copper-molybdenum alloy having a mounting portion on which the semiconductor element is mounted. A base body, a frame-shaped insulator made of an electrically insulating material such as an aluminum oxide sintered body attached to the upper surface of the base body so as to surround the mounting portion, and an inner peripheral portion of the frame-shaped insulator A plurality of wiring layers made of refractory metal such as tungsten, molybdenum, manganese, etc., which are adhered and led from the outer periphery to the outer peripheral portion, and a lid which is attached to the upper surface of the frame-shaped insulator and closes the hole inside the insulator. The semiconductor element is bonded and fixed to the semiconductor element mounting portion of the base body with an adhesive, and each electrode of the semiconductor element is formed on the wiring layer formed on the frame-shaped insulator through the bonding wire. Electrically Continued, and thereafter, the glass and the lid to the frame-shaped insulating member so as to close the inner hole of the frame-shaped insulator,
A semiconductor device as a product is obtained by joining them through a sealing material made of resin, a brazing material, etc., and hermetically housing the semiconductor element in a container made of a base, a frame-shaped insulator, and a lid.

In the above-mentioned package for housing a semiconductor element, the base on which the semiconductor element is mounted is made of a metal material such as a copper-tungsten alloy or a copper-molybdenum alloy, and the copper-tungsten alloy or copper-tungsten alloy is used. Since the molybdenum alloy has a high thermal conductivity of about 180 W / m · K and is excellent in thermal conductivity, the base body can well absorb the heat generated during the operation of the semiconductor element and can dissipate it into the atmosphere. As a result, the semiconductor element is always kept at an appropriate temperature, and the semiconductor element is effectively prevented from suffering thermal breakdown or thermal deterioration of its characteristics.

Further, copper-tungsten alloys and copper-based materials used as the base body of the above-mentioned package for accommodating semiconductor elements.
The molybdenum alloy is manufactured by firing tungsten powder or molybdenum powder to obtain a sintered porous body, and then melting the sintered porous body in the pores of the sintered porous body. When impregnated with copper, the sintered porous body has a range of 75 to 90% by weight and copper has a range of 10 to 25% by weight. When the sintered porous body made of molybdenum has been impregnated with copper, the sintered porous body has a range of 80 to 90% by weight. % By weight, and copper is in the range of 10 to 20% by weight.

[0005]

However, in this conventional package for accommodating semiconductor elements, the wiring layer formed on the frame-shaped insulator is formed of a refractory metal material such as tungsten, molybdenum, or manganese. , The specific electric resistance of tungsten is 5.4 μΩ ・
Since the electric signal is as high as cm (20 ° C.) or higher, when the electric signal is propagated to the wiring layer, the electric signal is greatly attenuated, and the electric signal is accurately and surely input / output between the semiconductor element and the external electric circuit. It had the drawback of not being able to.

In this conventional package for accommodating semiconductor elements, the base made of copper-tungsten alloy or copper-molybdenum alloy has a thermal conductivity of about 180 at maximum.
W / mK, which is highly integrated and highly integrated in recent years, and when a semiconductor element that generates a large amount of heat during operation is housed, the heat generated by the semiconductor element is externally transmitted through the substrate. Cannot be completely dissipated into the semiconductor element, and as a result, the semiconductor element becomes high temperature due to the heat generated by the element itself, causing thermal damage to the semiconductor element or causing a variation in characteristics, which makes it impossible to operate stably. Also had.

The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to enable an electric signal supplied from an external electric circuit to be accurately input to a semiconductor element housed inside, and at the same time, the semiconductor element outputs. It is an object of the present invention to provide a package for accommodating a semiconductor device, which can accurately supply an electric signal to an external electric circuit.

[0008]

SUMMARY OF THE INVENTION According to the present invention, a base having a mounting portion on which a semiconductor element is mounted, and a semiconductor element mounting portion mounted on the base so as to surround the semiconductor element are mounted. A semiconductor element housing comprising a frame-shaped insulator having a wiring layer to which each electrode of the element is connected, and a lid attached to the frame-shaped insulator to hermetically seal the inside of the frame-shaped insulator In the package, the frame-shaped insulator has a Si component converted to SiO ₂ of 25 to 80% by weight, a Ba component converted to BaO of 15 to 70% by weight, and a B component converted to B ₂ O _3. 1.5
˜5% by weight, Al component converted to Al ₂ O ₃ is 1 to 30% by weight, Ca component converted to CaO is more than 0% by weight and 3
It is formed of a sintered body containing 0% by weight or less, and the base body is made of tungsten and copper, and tungsten is formed on both upper and lower surfaces of an intermediate layer made of 70 to 90% by weight of tungsten and 10 to 30% by weight of copper. 35 to 65% by weight,
It is characterized in that it has a three-layer structure in which upper and lower layers made of 35 to 65% by weight of copper are arranged.

Further, according to the present invention, a base having a mounting portion on which a semiconductor element is mounted is mounted on the upper surface, and the semiconductor element mounting portion is mounted on the base so as to surround each of the electrodes of the semiconductor element. A semiconductor element storage package comprising a frame-shaped insulator having a wiring layer to be connected, and a lid body attached to the frame-shaped insulator and hermetically sealing the inside of the frame-shaped insulator, In the frame-shaped insulator, the Si component is ₂ when converted to SiO 2.
5 to 80% by weight, the Ba component is converted to BaO to be 15 to 7
0 wt%, B component is 1.5 to 5 wt% in terms of B ₂ O ₃ , Al component is 1 to 30 wt% in terms of Al ₂ O ₃ , C
a component is converted to CaO and exceeds 0% by weight and exceeds 30% by weight.
It is formed of a sintered body included below, and the base body is made of molybdenum and copper, and molybdenum is 65 to 85.
It has a three-layer structure in which an upper and lower layer of molybdenum of 40 to 60% by weight and copper of 40 to 60% by weight are arranged on both upper and lower surfaces of an intermediate layer of 15% to 35% by weight of copper and 15 to 35% by weight of copper. It is a feature.

According to the package for accommodating semiconductor elements of the present invention, the frame-shaped insulator is 25 when the Si component is converted into SiO _2.
˜80 wt%, Ba component converted to BaO 15 to 70
% By weight, B component is 1.5 to 5% by weight in terms of B ₂ O ₃ ,
The firing temperature of the sintered body in which the Al component is 1 to 30 wt% in terms of Al ₂ O ₃ and the Ca component is more than 0 wt% and 30 wt% or less in terms of CaO is 800 ° C to 1000 ° C. The wiring layer formed by co-firing with the frame-shaped insulator can be formed of copper, silver, or gold having a low specific electric resistance of 2.5 μΩ · cm (20 ° C.) or less because of its low temperature, and as a result, the wiring layer can be formed. When the electric signal is propagated to the electric signal, the electric signal is not greatly attenuated, and the electric signal can be accurately and reliably propagated.

Further, according to the package for accommodating a semiconductor element of the present invention, the base contains 70 to 90% by weight of tungsten,
A three-layer structure in which 35 to 65 wt% of tungsten and 35 to 65 wt% of copper are provided on both upper and lower surfaces of an intermediate layer of 10 to 30 wt% of copper, or 65 to 85 wt% of molybdenum, The upper and lower layers of molybdenum of 40 to 60% by weight and copper of 40 to 60% by weight are arranged on both upper and lower surfaces of the intermediate layer of 15 to 35% by weight of copper. 3
Due to the layered structure, the upper layer, which is the semiconductor element mounting portion of the base, has a high thermal conductivity of 250 W / m · K or more, and the semiconductor element mounted on the base emits a large amount of heat during operation. Even so, the heat is quickly spread in the plane direction of the semiconductor element mounting portion of the base, and the upper layer, intermediate layer,
It is possible to efficiently and reliably dissipate the light to the outside through the lower layer in order, whereby the semiconductor element is always kept at an appropriate temperature, and the semiconductor element can be stably and normally operated for a long period of time.

Further, according to the package for accommodating semiconductor elements of the present invention, the base is made of 70 to 90% by weight of tungsten,
A three-layer structure in which 35 to 65 wt% of tungsten and 35 to 65 wt% of copper are provided on both upper and lower surfaces of an intermediate layer of 10 to 30 wt% of copper, or 65 to 85 wt% of molybdenum, The upper and lower layers of molybdenum of 40 to 60% by weight and copper of 40 to 60% by weight are arranged on both upper and lower surfaces of the intermediate layer of 15 to 35% by weight of copper. 3
It has a layered structure, and by sandwiching an intermediate layer having a small linear thermal expansion coefficient between upper and lower layers having a large linear thermal expansion coefficient, the linear thermal expansion coefficient of the entire substrate can be adjusted to a linear thermal expansion coefficient (6 to 8 ppm) of the frame-shaped insulator.
/ ° C), and as a result, even if heat is applied to both the base and the frame-shaped insulator when attaching the frame-shaped insulator to the base or when the semiconductor element is operated, No large thermal stress due to the difference in linear thermal expansion coefficient between the two and the frame-shaped insulator is generated, and thereby, the airtight sealing of the space for housing the semiconductor element is always perfect, and It is possible to operate the element stably and normally.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention. In FIG. 1, 1 is a base, 2 is a frame-shaped insulator, and 3 is a lid. The base 1, the frame-shaped insulator 2 and the lid 3 constitute a container 5 that hermetically houses the semiconductor element 4 therein.

The base 1 has a mounting portion 1a on which the semiconductor element 4 is mounted, and the mounting portion 1 on which the semiconductor element 4 provided on the upper surface of the base 1 is mounted on the outer peripheral portion of the upper surface.
The frame-shaped insulator 2 is attached so as to surround a through an adhesive such as a brazing material, glass, or resin.

The substrate 1 functions as a support member for supporting the semiconductor element 4, and also absorbs heat generated by the semiconductor element 4 during operation and efficiently dissipates the heat into the atmosphere to keep the semiconductor element 4 at an appropriate temperature. The semiconductor element 4 is fixed on the mounting portion 1a of the base 1 surrounded by the frame-shaped insulator 2 with an adhesive such as glass, resin, or brazing material.

The substrate 1 is made of tungsten and copper, and is manufactured by impregnating molten copper into the pores of a sintered porous body obtained by firing tungsten powder.

Further, on the outer peripheral portion of the upper surface of the base body 1, the base body 1 is provided.
The frame-shaped insulator 2 is attached via an adhesive such as a brazing material, glass, or resin so as to surround the mounting portion 1a on which the semiconductor element 4 mounted on the upper surface of the base 1 is mounted. With the frame-shaped insulator 2, a space for housing the semiconductor element 4 is formed inside.

The frame-shaped insulator 2 attached to the base 1 is S
A raw material powder such as iO ₂ , BaO, B ₂ O ₃ , Al ₂ O ₃ and CaO is added with a binder and a dispersant having an acrylic resin as a main component, a plasticizer and an organic solvent to prepare a sludge and the sludge is A green sheet (raw sheet) is formed by adopting the doctor blade method or the calendar roll method. After that, the green sheet is appropriately punched and a plurality of these are laminated, and the temperature is about 800 ° C to 1 ° C.
It is manufactured by firing at a temperature of 000 ° C.

A plurality of wiring layers 6 extending from the inner peripheral portion to the upper portion of the frame-shaped insulator 2 are adhered and formed, and one end of the wiring layer 6 exposed at the inner peripheral portion of the frame-shaped insulator 2 is attached. The electrodes of the semiconductor element 4 are electrically connected to each other via the bonding wires 7, and the external lead pins 8 connected to an external electric circuit are connected to an external electric circuit at a portion led out to the upper surface of the frame-shaped insulator 2. It is attached by brazing through the brazing material.

The wiring layer 6 acts as a conductive path when connecting each electrode of the semiconductor element 4 to an external electric circuit, and copper,
It is formed of a metal powder such as silver or gold.

For the wiring layer 6, a metal paste obtained by adding and mixing a suitable organic binder, a solvent, etc. to a metal powder such as copper, silver, gold or the like is formed on the green sheet which will be the frame-shaped insulator 2 in advance as well known in the prior art. By printing and applying a predetermined pattern by using a printing method such as a screen printing method, the frame-shaped insulator 2 is adhered and formed from the inner peripheral portion to the upper surface.

When the wiring layer 6 is made of copper or silver, if a metal having excellent corrosion resistance is deposited on the exposed surface to a thickness of 1 μm to 20 μm by a plating method, the wiring layer 6 will be oxidized and corroded. This can be effectively prevented, and the connection between the wiring layer 6 and the bonding wire 7 and the attachment of the external lead pin 8 to the wiring layer 6 can be strengthened.
Therefore, when the wiring layer 6 is made of copper or silver,
To prevent oxidative corrosion of the wiring layer 6 and the bonding wire 7
In order to strengthen the attachment to the external lead pin 8, a metal having excellent corrosion resistance such as gold is used on the exposed surface of the wiring layer 6 in a range of 1 μm to 2 μm.
It is preferable to deposit it to a thickness of 0 μm.

The wiring layer 6 attached to the frame-shaped insulator 2
The external lead pin 8 brazed to is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy,
It serves to electrically connect the respective electrodes of the semiconductor element 4 to an external electric circuit.

The external lead pin 8 is formed in a predetermined shape by subjecting an ingot (lump) made of a metal such as an iron-nickel-cobalt alloy to a conventionally known metal working method such as rolling or punching. To be done.

In the present invention, in the frame-shaped insulator 2, the Si component is 25 to 80% by weight in terms of SiO ₂ , the Ba component is 15 to 70% by weight in terms of BaO, and the B component is B ₂ O _3. Calcination of 1.5 to 5% by weight, Al component of 1 to 30% by weight in terms of Al ₂ O ₃ , and Ca component of 0% to 30% by weight in terms of CaO. It is important to form a unity.

In the frame-shaped insulator 2, the Si component is converted into SiO ₂ of 25 to 80% by weight, the Ba component is converted into BaO of 15 to 70% by weight, and the B component is converted into B ₂ O _3. 1.5
˜5% by weight, Al component converted to Al ₂ O ₃ is 1 to 30% by weight, Ca component converted to CaO is more than 0% by weight and 3
When formed of a sintered body containing 0 wt% or less, the firing temperature of the sintered body is as low as 800 to 1000 ° C., so that the wiring layer 6 formed by simultaneous firing with the frame-shaped insulator 2 has a specific resistance of 2. It can be formed of copper, silver, or gold that is as low as 5 Ω · cm (20 ° C.) or less, and as a result, when an electric signal is propagated to the wiring layer 6, the electric signal is not significantly attenuated and the electric signal is not generated. Can be accurately and reliably propagated.

The frame-shaped insulator 2 made of the above-mentioned sintered body has a predetermined amount of SiO ₂ , BaO, B ₂ O ₃ , Al ₂ O ₃ and C.
A green sheet is obtained by adding a binder containing an acrylic resin as a main component, a dispersant, a plasticizer, and an organic solvent to each raw material powder of aO to prepare a sludge, and applying the doctor blade method or the calendar roll method to the sludge. Green sheet), after which the green sheet is appropriately punched and a plurality of layers are stacked to obtain about 8
It is manufactured by firing at a temperature of 00 ° C to 1000 ° C.

In the sintered body forming the frame-shaped insulator 2, if the SiO ₂ content is less than 25% by weight, the dielectric loss becomes large and the electric signal propagating through the wiring layer 6 is attenuated or delayed. If it exceeds 80% by weight, the frame-shaped insulator 2
Mechanical strength is greatly reduced, and at the same time, the firing temperature becomes high, making it difficult to co-fire with the wiring layer 6 made of a metal material such as copper. Therefore, the amount of SiO ₂ is specified in the range of 25-80% by weight.

If the BaO content of the sintered body constituting the frame-shaped insulator 2 is less than 15% by weight, the firing temperature will be high and the firing will be performed simultaneously with the wiring layer 6 made of a metal material such as copper. Will be difficult. On the other hand, if it exceeds 70% by weight, the dielectric loss increases and the electric signal propagating through the wiring layer 6 is attenuated or delayed. Therefore, the amount of BaO is 15 to 7
It is specified in the range of 0% by weight.

Further, in the sintered body constituting the frame-shaped insulator 2, when B ₂ O ₃ is less than 1.5% by weight, the firing temperature becomes high and the wiring layer 6 made of a metal material such as copper is formed. Simultaneous firing becomes difficult, and if it exceeds 5% by weight, the mechanical strength of the frame-shaped insulator 2 is greatly reduced. Therefore,
The amount of B ₂ O ₃ is identified in the range of 1.5 to 5 wt%. Furthermore, the sintered body forming the frame-shaped insulator 2 is made of Al ₂ O ₃
If less than 1% by weight, the firing temperature becomes high and it becomes difficult to co-fire with the wiring layer 6 made of a metal material such as copper. If it exceeds 30% by weight, the dielectric loss becomes large and the wiring layer 6 Attenuating and delaying the electrical signal propagating through the. Therefore, the amount of Al ₂ O ₃ is specified in the range of 1 to 30% by weight.

Furthermore, the sintered body constituting the frame-shaped insulator 2 has a linear thermal expansion coefficient which is close to the linear thermal expansion coefficient of the semiconductor element when CaO is not contained in the sintered body. The difference is largely that the frame-shaped insulator 2 cannot be firmly attached to the base body 1, and if it exceeds 30% by weight, the firing temperature becomes high, and at the same time as the wiring layer 6 made of a metal material such as copper. Difficult to fire. Therefore,
The amount of CaO is specified in the range of more than 0 wt% and 30 wt% or less.

In the present invention, the substrate 1 is made of 70 to 90% by weight of tungsten and 10 to 30% by weight of copper.
It is important to have a three-layer structure in which upper and lower layers 1b and 1d composed of 35 to 65% by weight of tungsten and 35 to 65% by weight of copper are provided on both upper and lower surfaces of the intermediate layer 1c.

The substrate 1 is made of tungsten 70 to 90.
35 to 65% by weight of tungsten and 35% by weight of copper on the upper and lower surfaces of the intermediate layer 1c consisting of 10 to 30% by weight of copper and 10 to 30% by weight of copper.
Since the upper layer 1b, which is the semiconductor element mounting portion 1a of the base 1, has a high thermal conductivity of 250 W / m · K or more, the upper layer 1b of the base 1 has a high thermal conductivity of 250 W / m · K or more. Even if the semiconductor element 4 mounted on the base 1 generates a large amount of heat during operation, the heat is quickly spread in the plane direction of the semiconductor element mounting portion 1a of the base 1 and the base 1
The upper layer 1b, the intermediate layer 1c, and the lower layer 1d can be sequentially and efficiently diffused to the outside, whereby the semiconductor element 4 is always kept at an appropriate temperature, and the semiconductor element 4 can be stably and normally operated for a long period of time. Is possible.

The substrate 1 is an intermediate layer 1c composed of 70 to 90% by weight of tungsten and 10 to 30% by weight of copper.
It has a three-layer structure in which upper and lower layers 1b and 1d composed of 35 to 65% by weight of tungsten and 35 to 65% by weight of copper are arranged on both upper and lower sides of the intermediate layer 1c having a small linear thermal expansion coefficient. Substrate 1 sandwiched between large upper and lower layers 1b and 1d
The coefficient of linear thermal expansion of the frame-shaped insulator 2 (6
To about 8 ppm / ° C.), heat is applied to both the base 1 and the frame-shaped insulator 2 when the frame-shaped insulator 2 is attached to the base 1 or when the semiconductor element 4 is activated. As a result, no large thermal stress is generated between the base body 1 and the frame-shaped insulator 2 due to the difference in linear thermal expansion coefficient between the base body 1 and the frame-shaped insulator 2, whereby the space for housing the semiconductor element 4 is hermetically sealed. Is always complete, and the semiconductor element 4 can be stably and normally operated.

The substrate 1 has an intermediate layer 1c in which the amount of tungsten is less than 70% by weight, or 90% by weight.
If it exceeds, the coefficient of linear thermal expansion of the base body 1 greatly differs from the coefficient of linear thermal expansion of the frame-shaped insulator 2, and as a result, the frame-shaped insulator 2 is firmly attached to the base body 1. I can't keep it. Therefore, the amount of tungsten forming the intermediate layer 1c of the substrate 1 is 70-9.
It is specified in the range of 0% by weight.

When the amount of tungsten in the upper and lower layers 1b and 1d is less than 35% by weight, in other words, the amount of copper is 65%.
If it exceeds 5% by weight, the linear thermal expansion coefficient of the substrate 1 is greatly different from the linear thermal expansion coefficient of the frame-shaped insulator 2, so that the frame-shaped insulator 2 can be firmly attached to the substrate 1. When the amount of tungsten exceeds 65% by weight, that is, when the amount of copper is less than 35% by weight, the upper and lower layers 1
When the thermal conductivity of b and 1d cannot be made as high as 250 W / m · K or more and the semiconductor element 4 generates a large amount of heat during operation, the heat is completely transmitted to the outside through the base body 1. Cannot be dissipated, and as a result, the semiconductor device 4
To a high temperature to cause thermal damage to the semiconductor element 4,
The characteristics vary, and it becomes impossible to operate stably. Therefore, the upper and lower layers 1b, 1d of the substrate 1
35 to 65% by weight of tungsten and 35 to 6 of copper
It is specified to be 5% by weight.

Further, if the upper and lower layers 1b and 1d are formed to have substantially the same composition and thickness, the stress generated between the upper layer 1b and the intermediate layer 1c and the stress generated between the lower layer 1d and the intermediate layer 1c. The flatness of the substrate 1 is improved by offsetting the stress, and as a result, the frame-shaped insulator 2 can be bonded to the substrate 1 extremely firmly, and the reliability of the hermetic sealing of the container 5 is further ensured. The operation reliability of the semiconductor element 4 housed in the container 5 can be made stable and reliable.

Furthermore, the upper and lower layers 1b and 1d and the intermediate layer 1
c is the thickness of the upper and lower layers 1b and 1d, and X is the thickness of the intermediate layer 1.
When the thickness of c is Y, the heat generated by the semiconductor element 4 via the base 1 can be radiated to the outside better by setting the range of 0.5Y ≦ X ≦ Y. The upper and lower layers 1b,
When the thickness of 1d is X and the thickness of the intermediate layer 1c is Y,
If 0.5Y> X, the upper and lower layers 1b and 1d having a high thermal conductivity of 250 W / m · K or more become thin and there is a risk that the heat generated by the semiconductor element 4 cannot be efficiently dissipated to the outside. When <X, the influence on the entire upper and lower base bodies 1 having a large linear thermal expansion coefficient becomes large, and it becomes difficult to approximate the linear thermal expansion coefficient of the base body 1 to the linear thermal expansion coefficient of the frame-shaped insulator 2. Since there is a risk, the thicknesses of the upper and lower layers 1b and 1d and the intermediate layer 1c are the same as the upper and lower layers 1b and 1d.
When the thickness of d is X and the thickness of the intermediate layer 1c is Y, 0.
The range of 5Y ≦ X ≦ Y is desirable.

The substrate 1 having the three-layer structure is the intermediate layer 1c.
A plate body having a predetermined thickness obtained by impregnating a predetermined amount of tungsten sintered body with a predetermined amount of copper, and a predetermined thickness obtained by impregnating a predetermined amount of tungsten sintered body serving as the upper and lower layers 1b and 1d with a predetermined amount of copper. And the upper and lower plates of the intermediate layer 1c are sandwiched between the upper and lower plates, and then in a vacuum or in a medium at a temperature about 20 ° C. higher than the melting temperature of copper (1083 ° C.). It is manufactured by stacking under pressure in a reducing atmosphere.

Thus, according to the above-mentioned package for housing a semiconductor element, the semiconductor element 4 is adhered and fixed on the semiconductor element mounting portion 1a of the base body 1 via an adhesive such as glass, resin, or brazing material, and the semiconductor element is mounted. Each electrode 4 is connected to a predetermined wiring layer 6 through a bonding wire 7, and then the lid 3 is attached to the upper surface of the frame-shaped insulator 2 with glass, resin,
A semiconductor device as a product is obtained by airtightly housing the semiconductor element 4 inside a container 5 made up of a base body 1, a frame-shaped insulator 2 and a lid body 3 by joining them through a sealing material made of a brazing material or the like. .

Next, another embodiment of the present invention will be described.

In the above-mentioned package for accommodating semiconductor elements, the base 1 is 35 to 65% by weight of tungsten and 35 to 65% by weight of tungsten on the upper and lower surfaces of the intermediate layer 1c comprising 70 to 90% by weight of tungsten and 10 to 30% by weight of copper. A three-layer structure in which upper and lower layers 1b and 1d composed of 65% by weight is arranged is used. This is 65 to 85% by weight of molybdenum and 15 to 35% of copper.
4% molybdenum is formed on both upper and lower surfaces of the intermediate layer 1c composed of 1% by weight.
A three-layer structure in which upper and lower layers 1b and 1d composed of 0 to 60% by weight and 40 to 60% by weight of copper may be arranged.

The base 1 is composed of 65 to 85% by weight of molybdenum and 15 to 35% by weight of copper. The upper and lower layers of the intermediate layer 1c are 40 to 60% by weight of molybdenum and 40 to 60% by weight of copper. In the case of a three-layer structure in which 1b and 1d are arranged, the upper layer 1b which is the semiconductor element mounting portion 1a of the base 1 has a high thermal conductivity of 250 W / m · K or more and is mounted on the base 1. Even if the semiconductor element 4 generates a large amount of heat during operation, the heat is quickly spread in the plane direction of the semiconductor element mounting portion 1a of the base body 1 and the upper layer 1b, the intermediate layer 1c, and the lower layer 1d of the base body 1 are sequentially passed through the outside. Therefore, the semiconductor element 4 is always kept at an appropriate temperature, and the semiconductor element 4 can be stably and normally operated for a long period of time.

Further, the upper and lower layers 1b made of 40 to 60% by weight of molybdenum and 40 to 60% by weight of copper are formed on the upper and lower surfaces of the intermediate layer 1c made of 65 to 85% by weight of molybdenum and 15 to 35% by weight of copper. In the base 1 having a three-layer structure in which 1d is arranged, the intermediate layer 1c having a small linear thermal expansion coefficient is sandwiched by the upper and lower layers 1b and 1d having a large linear thermal expansion coefficient, and the linear thermal expansion coefficient of the entire base 1 is the line of the frame-shaped insulator 2. Thermal expansion coefficient (6-8p
Even if heat is applied to both the base body 1 and the frame-shaped insulator 2 when the frame-shaped insulator 2 is attached to the base body 1 or when the semiconductor element 4 is operated, it is close to pm / ° C. No large thermal stress is generated between the base 1 and the frame-shaped insulator 2 due to the difference in linear thermal expansion coefficient between them, so that the space for accommodating the semiconductor element 4 is always hermetically sealed. It becomes complete, and the semiconductor element 4 can be stably and normally operated.

When the amount of molybdenum in the intermediate layer 1c of the substrate 1 is less than 65% by weight or exceeds 85% by weight, the coefficient of linear thermal expansion of the substrate 1 is the linear thermal expansion of the frame-shaped insulator 2. This greatly differs from the coefficient, and as a result, the frame-shaped insulator 2 cannot be firmly attached to the base body 1. Therefore, the amount of molybdenum forming the intermediate layer 1c of the substrate 1 is specified in the range of 65 to 85% by weight.

When the amount of molybdenum in the upper and lower layers 1b and 1d is less than 40% by weight, in other words, when the amount of copper exceeds 60% by weight, the coefficient of linear thermal expansion of the substrate 1 is the frame-shaped insulator 2.
The coefficient of linear thermal expansion is significantly different from that of the frame-shaped insulator 2 and it becomes impossible to firmly attach the frame-shaped insulator 2 to the substrate 1. If the amount of molybdenum exceeds 60% by weight,
In other words, when the copper content is less than 40% by weight, the upper and lower layers 1b,
When the thermal conductivity of 1d cannot be made as high as 250 W / m · K or more and the semiconductor element 4 generates a large amount of heat during operation, the heat is completely dissipated to the outside through the base body 1. As a result, the semiconductor element 4 is heated to a high temperature, causing thermal damage to the semiconductor element 4 or variation in characteristics, which makes it impossible to operate the semiconductor element 4 stably. Therefore, the upper and lower layers 1b and 1d of the substrate 1 are specified to have 40 to 60% by weight of molybdenum and 40 to 60% by weight of copper.

Further, if the upper and lower layers 1b and 1d are formed to have substantially the same composition and thickness, the stress generated between the upper layer 1b and the intermediate layer 1c and the stress generated between the lower layer 1d and the intermediate layer 1c. The stress is canceled out, and the flatness of the substrate 1 is improved,
As a result, the frame-shaped insulator 2 can be bonded to the base body 1 extremely firmly, and the reliability of the hermetic sealing of the container 5 is further ensured, and the operation reliability of the semiconductor element 4 housed inside the container 5 is improved. Can be stable and reliable.

Furthermore, the upper and lower layers 1b and 1d and the intermediate layer 1
c is the thickness of the upper and lower layers 1b and 1d, and X is the thickness of the intermediate layer 1.
When the thickness of c is Y, the heat generated by the semiconductor element 4 via the base 1 can be radiated to the outside better by setting the range of 0.5Y ≦ X ≦ Y. The upper and lower layers 1b,
When the thickness of 1d is X and the thickness of the intermediate layer 1c is Y,
If 0.5Y> X, the upper and lower layers 1b and 1d having a high thermal conductivity of 250 W / m · K or more become thin and there is a risk that the heat generated by the semiconductor element 4 cannot be efficiently dissipated to the outside. When <X, the influence on the entire upper and lower base bodies 1 having a large linear thermal expansion coefficient becomes large, and it becomes difficult to approximate the linear thermal expansion coefficient of the base body 1 to the linear thermal expansion coefficient of the frame-shaped insulator 2. Since there is a risk, the thicknesses of the upper and lower layers 1b and 1d and the intermediate layer 1c are the same as the upper and lower layers 1b and 1d.
When the thickness of d is X and the thickness of the intermediate layer 1c is Y, 0.
The range of 5Y ≦ X ≦ Y is desirable.

The substrate 1 having the three-layer structure is the intermediate layer 1c.
A plate body having a predetermined thickness obtained by impregnating a predetermined amount of molybdenum sintered body with a predetermined amount of copper and a predetermined thickness obtained by impregnating a predetermined amount of molybdenum sintered body serving as the upper and lower layers 1b and 1d with a predetermined amount of copper. And the upper and lower plates of the intermediate layer are sandwiched by the plate layers of the upper and lower layers, and then the melting temperature of copper (1083
In vacuum or at a temperature about 20 ° C higher than
It is manufactured by stacking under pressure in a reducing atmosphere.

The present invention is not limited to the above-mentioned embodiments, but various modifications can be made without departing from the gist of the present invention.

[0051]

According to the package for accommodating a semiconductor element of the present invention, the frame-shaped insulator is ₂ when the Si component is converted into SiO 2.
5 to 80% by weight, the Ba component is converted to BaO to be 15 to 7
0 wt%, B component is 1.5 to 5 wt% in terms of B ₂ O ₃ , Al component is 1 to 30 wt% in terms of Al ₂ O ₃ , C
a component is converted to CaO and exceeds 0% by weight and exceeds 30% by weight.
The firing temperature of the sintered body included below is 800 ° C to 1000 ° C.
Therefore, the wiring layer formed by co-firing with the frame-shaped insulator can be formed of copper, silver, or gold whose specific electric resistance is as low as 2.5 μΩ · cm (20 ° C.) or less. When the electric signal is propagated through the layer, the electric signal is not greatly attenuated, and the electric signal can be accurately and reliably propagated.

Further, according to the package for accommodating a semiconductor element of the present invention, the base contains 70 to 90% by weight of tungsten,
A three-layer structure in which 35 to 65 wt% of tungsten and 35 to 65 wt% of copper are provided on both upper and lower surfaces of an intermediate layer of 10 to 30 wt% of copper, or 65 to 85 wt% of molybdenum, The upper and lower layers of molybdenum of 40 to 60% by weight and copper of 40 to 60% by weight are arranged on both upper and lower surfaces of the intermediate layer of 15 to 35% by weight of copper. 3
Due to the layered structure, the upper layer, which is the semiconductor element mounting portion of the base, has a high thermal conductivity of 250 W / m · K or more, and the semiconductor element mounted on the base emits a large amount of heat during operation. Even so, the heat is quickly spread in the plane direction of the semiconductor element mounting portion of the base, and the upper layer, intermediate layer,
It is possible to efficiently and reliably dissipate the light to the outside through the lower layer in order, whereby the semiconductor element is always kept at an appropriate temperature, and the semiconductor element can be stably and normally operated for a long period of time.

Furthermore, according to the package for accommodating a semiconductor element of the present invention, the base is made of 70 to 90% by weight of tungsten,
A three-layer structure in which 35 to 65 wt% of tungsten and 35 to 65 wt% of copper are provided on both upper and lower surfaces of an intermediate layer of 10 to 30 wt% of copper, or 65 to 85 wt% of molybdenum, The upper and lower layers of molybdenum of 40 to 60% by weight and copper of 40 to 60% by weight are arranged on both upper and lower surfaces of the intermediate layer of 15 to 35% by weight of copper. 3
It has a layered structure, and by sandwiching an intermediate layer having a small linear thermal expansion coefficient between upper and lower layers having a large linear thermal expansion coefficient, the linear thermal expansion coefficient of the entire substrate can be adjusted to a linear thermal expansion coefficient (6 to 8 ppm) of the frame-shaped insulator.
/ ° C), and as a result, even if heat is applied to both the base and the frame-shaped insulator when attaching the frame-shaped insulator to the base or when the semiconductor element is operated, No large thermal stress due to the difference in linear thermal expansion coefficient between the two and the frame-shaped insulator is generated, and thereby, the airtight sealing of the space for housing the semiconductor element is always perfect, and It is possible to operate the element stably and normally.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

[Explanation of symbols]

1 ... Base 1a ... ・ Mounting part 1b ... upper layer 1c ... Middle layer 1d ... Lower layer 2 ... Frame-shaped insulator 3 ... Lid 4 ... Semiconductor element 5 ... Container 6 ... Wiring layer 7 ... Bonding wire 8: External lead pin

Claims (2)

[Claims] 1. A base having a mounting portion on which a semiconductor element is mounted, and a semiconductor element mounting portion mounted on the base so as to surround the semiconductor element, and each electrode of the semiconductor element is connected. A package for accommodating a semiconductor element, comprising: a frame-shaped insulator having a wiring layer; and a lid attached to the frame-shaped insulator to hermetically seal the inside of the frame-shaped insulator. In the insulator, the Si component is 25 to 80% by weight calculated as SiO ₂ .
The Ba component is 15 to 70% by weight in terms of BaO, the B component is 1.5 to 5% by weight in terms of B ₂ O ₃ , and the Al component is Al.
It is formed of a sintered body containing 1 to 30% by weight in terms of ₂ O ₃ and a Ca component in excess of 0% to 30% by weight in terms of CaO, and the base body is made of tungsten and copper. Consisting of 70 to 90% by weight of tungsten and 1 of copper
A semiconductor device having a three-layer structure in which upper and lower layers of 35 to 65% by weight of tungsten and 35 to 65% by weight of copper are arranged on both upper and lower surfaces of an intermediate layer of 0 to 30% by weight. Storage package. 2. A base having a mounting portion on which a semiconductor element is mounted, and a semiconductor element mounting portion mounted on the base so as to surround the base, and each electrode of the semiconductor element is connected. A package for accommodating a semiconductor element, comprising: a frame-shaped insulator having a wiring layer; and a lid attached to the frame-shaped insulator to hermetically seal the inside of the frame-shaped insulator. In the insulator, the Si component is 25 to 80% by weight calculated as SiO ₂ .
The Ba component is 15 to 70% by weight in terms of BaO, the B component is 1.5 to 5% by weight in terms of B ₂ O ₃ , and the Al component is Al.
It is formed of a sintered body containing 1 to 30 wt% in terms of ₂ O ₃ and Ca component in excess of 0 to 30 wt% in terms of CaO, and the substrate is molybdenum and copper. Consisting of 65 to 85% by weight of molybdenum, 15 to 35% by weight of copper, and 3 layers of upper and lower layers of 40 to 60% by weight of molybdenum and 40 to 60% by weight of copper on the upper and lower surfaces of the intermediate layer. A package for housing a semiconductor element, which has a structure.