JP2003068724A - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法

Info

Publication number
JP2003068724A
JP2003068724A JP2001381487A JP2001381487A JP2003068724A JP 2003068724 A JP2003068724 A JP 2003068724A JP 2001381487 A JP2001381487 A JP 2001381487A JP 2001381487 A JP2001381487 A JP 2001381487A JP 2003068724 A JP2003068724 A JP 2003068724A
Authority
JP
Japan
Prior art keywords
plasma processing
shield plate
substrate
plasma
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001381487A
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English (en)
Japanese (ja)
Other versions
JP2003068724A5 (https=
Inventor
Yukihiro Maekawa
幸弘 前川
Tomohiro Okumura
智洋 奥村
Izuru Matsuda
出 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001381487A priority Critical patent/JP2003068724A/ja
Publication of JP2003068724A publication Critical patent/JP2003068724A/ja
Publication of JP2003068724A5 publication Critical patent/JP2003068724A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP2001381487A 2001-06-15 2001-12-14 プラズマ処理装置およびプラズマ処理方法 Pending JP2003068724A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001381487A JP2003068724A (ja) 2001-06-15 2001-12-14 プラズマ処理装置およびプラズマ処理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001182167 2001-06-15
JP2001-182167 2001-06-15
JP2001381487A JP2003068724A (ja) 2001-06-15 2001-12-14 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2003068724A true JP2003068724A (ja) 2003-03-07
JP2003068724A5 JP2003068724A5 (https=) 2005-07-28

Family

ID=26617022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001381487A Pending JP2003068724A (ja) 2001-06-15 2001-12-14 プラズマ処理装置およびプラズマ処理方法

Country Status (1)

Country Link
JP (1) JP2003068724A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100416757C (zh) * 2005-12-07 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置排气环
JP2013177284A (ja) * 2011-09-16 2013-09-09 Toyota Motor Corp プラズマｃｖｄ装置及び基板加熱保持台並びにカーボンナノチューブの製造方法
CN104157681A (zh) * 2014-07-22 2014-11-19 京东方科技集团股份有限公司 一种上部电极及其制造方法和干法刻蚀设备
JP2016028379A (ja) * 2014-07-10 2016-02-25 東京エレクトロン株式会社 プラズマ処理装置用の部品、プラズマ処理装置、及びプラズマ処理装置用の部品の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100416757C (zh) * 2005-12-07 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置排气环
JP2013177284A (ja) * 2011-09-16 2013-09-09 Toyota Motor Corp プラズマｃｖｄ装置及び基板加熱保持台並びにカーボンナノチューブの製造方法
JP2016028379A (ja) * 2014-07-10 2016-02-25 東京エレクトロン株式会社 プラズマ処理装置用の部品、プラズマ処理装置、及びプラズマ処理装置用の部品の製造方法
CN104157681A (zh) * 2014-07-22 2014-11-19 京东方科技集团股份有限公司 一种上部电极及其制造方法和干法刻蚀设备

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