JP2003053639A - Holding tool and workpiece joining and detaching method to/from the same - Google Patents

Holding tool and workpiece joining and detaching method to/from the same

Info

Publication number
JP2003053639A
JP2003053639A JP2001247919A JP2001247919A JP2003053639A JP 2003053639 A JP2003053639 A JP 2003053639A JP 2001247919 A JP2001247919 A JP 2001247919A JP 2001247919 A JP2001247919 A JP 2001247919A JP 2003053639 A JP2003053639 A JP 2003053639A
Authority
JP
Japan
Prior art keywords
holder
work piece
state
semiconductor wafer
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001247919A
Other languages
Japanese (ja)
Inventor
Masahiko Kitamura
政彦 北村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2001247919A priority Critical patent/JP2003053639A/en
Publication of JP2003053639A publication Critical patent/JP2003053639A/en
Pending legal-status Critical Current

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Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To join a planar workpiece like a semiconductor wafer (8) to one side of a holding tool (2) without restraining air bubbles and to detach the workpiece part from the holding tool (2) without generating excessive stress in the workpiece, by improving the holding tool (2) itself and a workpiece joining and detaching method to/from the holding tool (2). SOLUTION: This holding tool (2) is formed of synthetic resin which becomes a rubber state when heated to above a glass transfer temperature and becomes a glass state when cooled to below the glass transfer temperature. When the workpiece is joined and detached to/from the holding tool (2), the holding tool (2) is heated to above the glass transfer temperature to make the tool (2) into the rubber state.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウエーハの
如き板状被加工物に加工を施す際に被加工物を保持する
のに使用される板状保持具、並びにかかる保持具に対す
る被加工物の接合及び離脱方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plate-shaped holder used to hold a workpiece when processing a workpiece such as a semiconductor wafer, and a workpiece for the holder. The present invention relates to a joining and detaching method.

【0002】[0002]

【従来の技術】当業者には周知の如く、半導体チップの
製造工程においては半導体ウエーハに種々の機械加工を
施す、例えば半導体ウエーハの厚さを低減するために裏
面を研削する、研削に起因して生成された加工歪を除去
するための裏面を研磨する、半導体ウエーハを格子状に
配列されたストリートに沿って切断して半導体チップに
分割する、ことが必要である。半導体ウエーハに所要機
械加工を施す際には、半導体ウエーハを保持具上に保持
して取り扱っている。保持具の典型例としては、ガラ
ス、金属、合成樹脂或いはセラミックスから形成された
板状保持具を挙げることができる。半導体ウエーハは適
宜の粘着乃至接着剤を介して保持具の片面に接合され
る。
As is well known to those skilled in the art, in the process of manufacturing a semiconductor chip, the semiconductor wafer is subjected to various machining processes, for example, the back surface is ground to reduce the thickness of the semiconductor wafer, which is caused by grinding. It is necessary to polish the back surface in order to remove the processing strain generated by the above, to cut the semiconductor wafer along the streets arranged in a grid, and to divide it into semiconductor chips. When a semiconductor wafer is subjected to required machining, the semiconductor wafer is held and handled on a holder. As a typical example of the holder, a plate-like holder made of glass, metal, synthetic resin or ceramics can be mentioned. The semiconductor wafer is bonded to one side of the holder via a suitable adhesive or adhesive.

【0003】[0003]

【発明が解決しようとする課題】而して、従来の板状保
持具には次のとおりの既決すべき問題がある。保持具の
片面に半導体ウエーハを接合する際に保持具の片面と半
導体ウエーハの片面とを全体に渡って充分緊密に密接す
ることができず、両者間に小さい気泡が拘束され、かか
る気泡に起因して半導体ウエーハに機械加工を施す際に
半導体ウエーハが破損されてしまう虞がある。また、保
持具の片面から半導体ウエーハを離脱せしめる際に、半
導体ウエーハに過剰の応力が生成され、半導体ウエーハ
が破損されることがある。
However, the conventional plate-shaped holder has the following problems to be decided. When bonding the semiconductor wafer to the one side of the holder, the one side of the holder and the one side of the semiconductor wafer cannot be sufficiently tightly adhered to each other across the whole, and small bubbles are bound between the two, resulting in such bubbles. Then, the semiconductor wafer may be damaged when the semiconductor wafer is machined. Further, when the semiconductor wafer is detached from one surface of the holder, excessive stress may be generated in the semiconductor wafer and the semiconductor wafer may be damaged.

【0004】本発明は上記事実に鑑みてなされたもので
あり、その主たる技術的課題は、保持具自体及びこれに
対する被加工物の接合及び離脱方法を改良して、半導体
ウエーハの如き板状被加工物を気泡を拘束することなく
保持具の片面上に接合することができ、そしてまた被加
工物に過剰の応力を生成せしめることなく保持具から被
加工部を離脱せしめることを可能にすることである。
The present invention has been made in view of the above facts, and its main technical problem is to improve the method of joining and releasing the holder itself and the workpieces to and from the holder so that a plate-shaped workpiece such as a semiconductor wafer can be obtained. To allow the work piece to be bonded on one side of the retainer without restraining air bubbles, and also to allow the work piece to be disengaged from the retainer without creating excessive stress on the work piece. Is.

【0005】[0005]

【課題を解決するための手段】本発明等は、鋭意検討の
結果、ガラス転移温度以上に加熱されるとゴム状態にな
り、ガラス転移温度以下に冷却されるとガラス状態にな
る合成樹脂から保持具を形成し、そしてまた保持具に対
して被加工物を接合及び離脱する際には保持具をガラス
転移温度以上に加熱してゴム状態にせしめることによっ
て上記主たる技術的課題を達成することができることを
見出した。
Means for Solving the Problems As a result of intensive studies, the present invention has been made from a synthetic resin that becomes a rubber state when heated to a glass transition temperature or higher and a glass state when cooled to a glass transition temperature or lower. In forming the tool, and when joining and releasing the workpiece with respect to the holder, the above-mentioned main technical problem can be achieved by heating the holder to a glass transition temperature or higher to bring it into a rubber state. I found that I could do it.

【0006】即ち、本発明の一局面によれば、片面上に
板状被加工物を保持する板状保持具にして、ガラス転移
温度よりも高温にせしめられるとゴム状態になり、ガラ
ス転移温度よりも低温にせしめられるとガラス状態にな
る合成樹脂から形成されている、ことを特徴とする保持
具が提供される。
[0006] That is, according to one aspect of the present invention, a plate-shaped holder for holding a plate-shaped workpiece on one surface thereof is changed to a rubber state when it is heated to a temperature higher than the glass transition temperature. Provided is a holder characterized by being formed of a synthetic resin which becomes a glass state when it is chilled to a lower temperature.

【0007】該合成樹脂はポリノルボルネンであるのが
好適である。好適実施形態においては、該片面上にはタ
ック性を有するゴムシート乃至フィルムから構成された
タック部材が接合されており、被加工物は該タック部材
を介して該片面上に接合される。本明細書のおいて使用
する語句「タック性」は、粘着乃至接着剤を使用するこ
となくゴム特性によってその表面に被加工物を接合せし
める特性(所謂事項粘着性)を意味する。該タック部材
は40乃至250℃に加熱されるとタック性が低下する
のが好ましい。該タック部材は該ゴムシート乃至フィル
ムの裏面に積層された合成樹脂シート乃至フィルムを含
むことができる。該ゴムシート乃至フィルムの、被加工
物が接合される表面には複数個の凹部が間隔をおいて形
成されているのが好適である。好ましくは、該ゴムシー
ト乃至フィルムの、被加工物が接合される表面には、平
面図において20乃至50%の面積割合で該凹部が形成
され、該凹部以外は平坦である。上面から下面まで厚さ
方向に貫通する複数個の貫通孔が形成されているのが好
都合である。被加工物は半導体ウエーハでよい。
The synthetic resin is preferably polynorbornene. In a preferred embodiment, a tack member made of a rubber sheet or film having tack property is joined to the one surface, and the work piece is joined to the one surface via the tack member. The term "tackiness" used in the present specification means a property (so-called item tackiness) that allows a work piece to be bonded to its surface by a rubber property without using an adhesive or an adhesive. When the tack member is heated to 40 to 250 ° C., the tack property is preferably lowered. The tack member may include a synthetic resin sheet or film laminated on the back surface of the rubber sheet or film. It is preferable that a plurality of concave portions are formed at intervals on the surface of the rubber sheet or film to which the workpiece is joined. Preferably, the surface of the rubber sheet or film to which the workpiece is joined is provided with the recesses in an area ratio of 20 to 50% in plan view, and is flat except for the recesses. It is convenient that a plurality of through holes are formed so as to penetrate in the thickness direction from the upper surface to the lower surface. The work piece may be a semiconductor wafer.

【0008】本発明の他の局面によれば、上記保持具に
被加工物を接合する方法にして、支持手段の平坦な表面
上に被加工物を載置し、次いでガラス転移温度よりも高
温に加熱してゴム状態にせしめた該保持具を、湾曲せし
めた状態から漸次平坦な状態にせしめるこによって、該
保持具の片面をその片側から他側に向けて漸次被加工物
に密接せしめる、ことを特徴とする方法が提供される。
そしてまた、上記保持具の片面に接合された被加工物
を、該保持具の該片面から離脱する方法にして、支持手
段の平坦な表面上に被加工物が下層に該保持具が上層に
なる状態に載置し、かかる載置と同時に或いはその前又
は後に該保持具をガラス転移温度よりも高温に加熱して
ゴム状態にせしめ、次いで該保持具を平坦な状態から漸
次湾曲せしめて、該保持具の該片面をその片側から他側
に向けて漸次被加工物から離隔せしめる、ことを特徴と
する方法が提供される。
According to another aspect of the present invention, a method for joining a work piece to the holder is provided, the work piece is placed on the flat surface of the supporting means, and then the temperature is higher than the glass transition temperature. The holder that is heated to make it in a rubber state is gradually brought into a flat state from a curved state, so that one side of the holder is gradually brought into close contact with the workpiece from one side to the other side. A method is provided that is characterized by:
Further, the work piece joined to one side of the holder is separated from the one side of the holder, and the work piece is a lower layer and the holder is an upper layer on the flat surface of the supporting means. Placed in such a state, at the same time as or before or after such placement, the holder is heated to a temperature higher than the glass transition temperature to be in a rubber state, and then the holder is gradually curved from a flat state, Provided is a method characterized in that the one side of the holder is gradually separated from the work piece from one side thereof to the other side.

【0009】[0009]

【発明の実施の形態】以下、添付図面を参照して、本発
明に従って構成された保持具並びに係る保持具に対する
被加工物の接合及び離脱方法の好適実施形態について、
詳述する。
BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of a holder constructed according to the present invention and a method of joining and releasing workpieces to and from the holder will be described below with reference to the accompanying drawings.
Detailed description.

【0010】図1及び図2は本発明に従って構成された
保持具の好適実施形態を図示している。この保持具2は
円板形状の本体4を具備している。この本体4は、ガラ
ス転移温度よりも高温にせしめられるとゴム状態にな
り、ガラス転移温度よりも低温にせしめられるとガラス
状態になる合成樹脂から形成されていることが重要であ
る。かかる合成樹脂としては、日本ゼオン株式会社から
商品名「ノーソレックス」として販売されているポリノ
ルボンネンを挙げることができる。ポリノルボンネンは
ガラス転移温度の上限が略40℃でガラス転移温度の下
限が略36℃であり、略40℃以上に加熱すると弾性率
が低下してゴム状態になり、略36℃以下に冷却される
と弾性率が増大してガラス状態になる。
1 and 2 illustrate a preferred embodiment of a retainer constructed in accordance with the present invention. The holder 2 includes a disc-shaped main body 4. It is important that the main body 4 is made of a synthetic resin that becomes a rubber state when it is heated to a temperature higher than the glass transition temperature and a glass state when it is heated to a temperature lower than the glass transition temperature. As such a synthetic resin, polynorbornene sold by Nippon Zeon Co., Ltd. under the trade name "No Solex" can be mentioned. Polynorbornene has an upper limit of glass transition temperature of about 40 ° C. and a lower limit of glass transition temperature of about 36 ° C. When it is heated to about 40 ° C. or higher, its elastic modulus decreases and becomes a rubber state, and it is cooled to about 36 ° C. or lower. And the elastic modulus increases and it becomes a glass state.

【0011】図示の保持具2においては、本体4の片面
(図2において上面)上にタック性、即ちゴム特性によ
ってその表面に被加工物を接合せしめる所謂自己粘着
性、を有するゴムシート乃至フィルムから形成されてい
るタック部材6が接合されている。かかるタック部材6
は、タック性に加えて、例えば40乃至250℃程度に
加熱されると軟化せしめられてタック性が低下乃至消失
せしめられるものであるのが好適である。かようなゴム
シート乃至フィルムの好適例としては、クレハエラスト
マー株式会社から商品名「ぺらぺら君」として販売され
ているシリコーンゴムシート乃至乃至フィルムを挙げる
ことができる。かようなゴムシート乃至フィルムのみで
タック部材6を構成することもできるが、所望ならばか
かるゴムシート乃至フィルムの裏面に、ポリエチレンテ
レフタレートシート乃至フィルム、ポリエチレンシート
乃至フィルム或いはポリプロピレンシート乃至フィルム
の如き適宜の合成樹脂シート乃至フィルムを、適宜の粘
着乃至接着剤による接着或いは加熱融着によって積層せ
しめて、タック部材6を構成することもできる。図2に
図示する如く、タック部材6の、被加工物即ち半導体ウ
エーハ8(図3)が接合される表面(即ち図2において
上面)には間隔をおいて複数個の凹部10が形成されて
いるのが好適である。かかる凹部10は、例えば適宜の
間隔をおいて配列された円形凹部、或いは適宜の間隔を
おいて平行に延びるチャッネル状凹部でよい。凹部8の
割合は平面図における面積割合で20乃至50%程度で
あるのが好ましい。本発明者の経験によれば、凹部10
を形成すると、タック部材6を加熱した時にタック性が
効果的に低下乃至消失され、タック部材6からの半導体
ウエーハ10の離脱が容易になる。一方、凹部10の割
合が過剰になると、常温状態でのタック部材6のタック
性が過小になる傾向がある。図示に実施形態におけるタ
ック部材6は本体4と実質上同一の形状、従って実質上
同一直径の円形状であり、そのタック性自体によって本
体4の片面上に接合或いは適宜の粘着乃至接着剤によっ
て本体4の片面上に接合されている。
In the illustrated holder 2, a rubber sheet or film having tackiness on one surface (upper surface in FIG. 2) of the main body 4, that is, so-called self-adhesiveness for bonding a workpiece to the surface due to rubber characteristics. The tack member 6 formed of is joined. Such tack member 6
It is preferable that, in addition to the tackiness, the tackiness is softened when heated to, for example, about 40 to 250 ° C., and the tackiness is reduced or eliminated. Preferable examples of such a rubber sheet or film include silicone rubber sheets or films sold by Kureha Elastomer Co., Ltd. under the trade name “Perapera-kun”. The tack member 6 can be composed only of such a rubber sheet or film, but if desired, a polyethylene terephthalate sheet or film, a polyethylene sheet or film, or a polypropylene sheet or film may be appropriately provided on the back surface of the rubber sheet or film. The tack member 6 can also be formed by laminating the synthetic resin sheets or films described in 1 above by adhesion or heat fusion with an appropriate adhesive or adhesive. As shown in FIG. 2, a plurality of recesses 10 are formed at intervals on the surface (that is, the upper surface in FIG. 2) of the tack member 6 to which the workpiece, that is, the semiconductor wafer 8 (FIG. 3) is bonded. Is preferred. The recesses 10 may be, for example, circular recesses arranged at appropriate intervals or channel-like recesses extending in parallel at appropriate intervals. The proportion of the recesses 8 is preferably about 20 to 50% in terms of area in plan view. According to the experience of the present inventor, the recess 10
When the tack member 6 is formed, the tack property is effectively reduced or eliminated when the tack member 6 is heated, and the semiconductor wafer 10 is easily separated from the tack member 6. On the other hand, if the proportion of the recesses 10 is excessive, the tackiness of the tack member 6 at room temperature tends to be too small. The tack member 6 in the illustrated embodiment has a substantially same shape as the main body 4, and thus a circular shape having substantially the same diameter, and the tacking member 6 is bonded to one surface of the main body 4 by its tackiness itself or is formed by an appropriate adhesive or adhesive agent. 4 is joined on one side.

【0012】図示の実施形態においては、更に、本体4
及びタック部材6をそれらの厚さ方向に貫通して(従っ
て保持具2の上面から下面まで貫通して)延びる複数個
の貫通孔12が配設されている。
In the illustrated embodiment, the body 4 is further
Further, a plurality of through holes 12 extending through the tack member 6 in the thickness direction thereof (thus penetrating from the upper surface to the lower surface of the holder 2) are provided.

【0013】図1及び図2と共に図3を参照して説明を
続けると、板状被加工物である半導体ウエーハ8に機械
加工を施す場合には、保持具2の片面、図示の実施形態
においてはタック部材6が接合されている面上に、半導
体ウエーハ8を接合する。この際には、図3に図示する
如く、平坦な支持面14を有する支持手段16上に半導
体ウエーハ8を載置する。半導体ウエーハ8の裏面に研
削又は研磨を施す場合には、裏面を下方に向け表面を上
方に露呈せしめて半導体ウエーハ8を支持面14上に載
置する。半導体ウエーハ8の表面からスリートに沿って
切削する場合には、表面を下方に向け裏面を上方に露呈
せしめて半導体ウエーハ8を支持面14上に載置する。
次いで、例えば加熱室内に所定時間収容することによっ
てガラス転移温度よりも高温(例えば40℃)に加熱し
て本体4をゴム状態にせしめた保持具2を、図3に二点
鎖線2Aで示す如く湾曲せしめた状態でその片面の片側
(図3において右側)を半導体ウエーハ8の片面の片側
に密接せしめる。次いで、図3に二点鎖線2B及び2C
で示す如く、保持具2を湾曲せしめた状態から漸次平坦
な状態にせしめることによって、保持具2の片面をその
片側から他側(図3において左側)に向けて半導体ウエ
ーハ8の片面に漸次密接せしめ、図3に実線で示す状態
を確立する。この際には、例えば保持具2の上面に押圧
ローラ(図示していない)を作用せしめて、保持具2の
片面を漸次半導体ウエーハ8の片面に押圧することがで
きる。本体4がゴム状態にせしめられている保持具2を
湾曲状態から漸次平坦な状態にせしめることによって、
保持具2の片面をその片側から他側に向けて漸次半導体
ウエーハ8の片面に密接せしめる故に、保持具2の片面
と半導体ウエーハ8の片面との間に気泡を拘束せしめる
ことなく、半導体ウエーハ8の片面の全体に渡って保持
具2の片面を密接せしめることができる。
Continuing the description with reference to FIG. 3 together with FIG. 1 and FIG. 2, when the semiconductor wafer 8 which is a plate-shaped workpiece is to be machined, one side of the holder 2 is used, in the illustrated embodiment. Joins the semiconductor wafer 8 on the surface where the tack member 6 is joined. At this time, as shown in FIG. 3, the semiconductor wafer 8 is placed on the supporting means 16 having the flat supporting surface 14. When grinding or polishing the back surface of the semiconductor wafer 8, the semiconductor wafer 8 is placed on the support surface 14 with the back surface facing downward and the surface exposed upward. When cutting from the surface of the semiconductor wafer 8 along the sleet, the semiconductor wafer 8 is placed on the support surface 14 with the front surface facing downward and the back surface exposed upward.
Next, for example, by holding the main body 4 in a rubber state by heating it to a temperature higher than the glass transition temperature (for example, 40 ° C.) by housing it in a heating chamber for a predetermined time, as shown by a chain double-dashed line 2A in FIG. One side of the one side (right side in FIG. 3) is brought into close contact with one side of the one side of the semiconductor wafer 8 in a curved state. Then, in FIG. 3, two-dot chain lines 2B and 2C are shown.
As shown in FIG. 3, the holding tool 2 is gradually flattened from the curved state, so that one side of the holding tool 2 is gradually brought into close contact with one side of the semiconductor wafer 8 from one side to the other side (left side in FIG. 3). Then, the state shown by the solid line in FIG. 3 is established. At this time, for example, a pressing roller (not shown) may be applied to the upper surface of the holder 2 to gradually press one surface of the holder 2 against one surface of the semiconductor wafer 8. By making the holder 2 in which the main body 4 is in the rubber state be gradually flat from the curved state,
Since one side of the holder 2 is gradually brought into close contact with one side of the semiconductor wafer 8 from one side to the other side, the semiconductor wafer 8 can be held without binding air bubbles between the one side of the holder 2 and the one side of the semiconductor wafer 8. The one side of the holding tool 2 can be brought into close contact with the entire one side.

【0014】図3に実線で示す状態を確立した後に、保
持具2がガラス転移温度よりも低温(例えば30℃)に
冷却されると、タック部材6のタック性が復元され、こ
れによって保持具2の片面に半導体ウエーハ8が充分強
固に接合される。また、保持具2の本体はガラス状態に
なって弾性率が増大せしめられ、半導体ウエーハ8を効
果的に補強する。
After the state shown by the solid line in FIG. 3 is established, when the holder 2 is cooled to a temperature lower than the glass transition temperature (for example, 30 ° C.), the tackiness of the tack member 6 is restored, whereby the holder is held. The semiconductor wafer 8 is bonded to one surface of 2 sufficiently firmly. In addition, the main body of the holder 2 is in a glass state to increase the elastic modulus, which effectively reinforces the semiconductor wafer 8.

【0015】上述したとおりにして保持具2の片面に半
導体ウエーハ8を接合した後においては、保持具2の片
面に接合せしめられた半導体ウエーハ8にその裏面の研
削又は研磨或いは表面からの切削の如き所要機械加工を
施すことができる。この際には、通常、保持具2が下層
に半導体ウエーハ8が上層になる状態(従って図3に示
す状態を上下に反転した状態)にして加工機械のチャッ
ク手段(図示していない)上に配置する。チャック手段
は多孔性材料から形成或いは適宜の吸引孔乃至溝が形成
されたチャック板を有し、かかるチャック板を真空源に
連通せしめることによって保持具2及び半導体ウエーハ
8がチャック手段上に真空吸着される。図示の保持具2
においては複数個の貫通孔12が形成されている故に、
真空吸引作用は貫通孔12を介して半導体ウエーハ8に
も直接的に作用し、かくして半導体ウエーハ8が充分強
固にチャック手段上に保持される。
After the semiconductor wafer 8 is bonded to one surface of the holder 2 as described above, the back surface of the semiconductor wafer 8 bonded to one surface of the holder 2 is ground or polished or cut from the front surface. The required machining can be performed as described above. At this time, normally, the holder 2 is placed in a lower layer and the semiconductor wafer 8 is placed in an upper layer (hence, the state shown in FIG. 3 is turned upside down) and placed on the chuck means (not shown) of the processing machine. Deploy. The chuck means has a chuck plate formed of a porous material or formed with appropriate suction holes or grooves, and the holder 2 and the semiconductor wafer 8 are vacuum-adsorbed on the chuck means by connecting the chuck plate to a vacuum source. To be done. Illustrated holder 2
Since a plurality of through holes 12 are formed in
The vacuum suction action also acts directly on the semiconductor wafer 8 through the through holes 12, and thus the semiconductor wafer 8 is held sufficiently firmly on the chuck means.

【0016】保持具2に接合された半導体ウエーハ8に
所要機械加工を施した後においては、半導体ウエーハ8
から保持具2を離脱せしめることが必要である。この際
には、保持具2の片面に半導体ウエーハ8を接合する際
の上述した操作の逆に近似した操作を遂行すればよい。
図3を参照して詳述すると、半導体ウエーハ8が下層に
保持具2が上層になる状態で支持手段16の支持面14
上に載置する。そして、保持具2を例えば40℃以上に
加熱する。支持手段16内に電気抵抗加熱線の如き適宜
の加熱手段(図示していない)を配設し、かかる加熱手
段を付勢することによって保持具2を所要とおりに加熱
することができる。保持具2を加熱すると、そのタック
部材6のタック性が低下乃至消失せしめられる。また、
本体4の弾性率が低下せしめられゴム状態になる。次い
で、半導体ウエーハ8を支持面14上に静止せしめて、
保持具2を図3に実線で示す平坦な状態から図3に二点
鎖線2C、2B及び2Aで示す状態に漸次湾曲せしめ
て、保持具2の片面をその片側(図3において左側)か
らその他側(図3において右側)に向けて半導体ウエー
ハ8の片面から漸次離脱せしめる。半導体ウエーハ8を
静止状態に維持するには、例えば支持面14の少なくと
も一部を多孔性材料から形成或いは支持面14の少なく
とも一部に吸引孔乃至溝を形成し、支持面14を真空源
に連通せしめることによって支持面14上に半導体ウエ
ーハ8を真空吸着すればよい。半導体ウエーハ8の片面
からの保持具2の片面の離脱は、保持具2を漸次湾曲せ
しめることによってその片側から他側に向けて漸次進行
せしめられる故に、半導体ウエーハ8に過剰な応力が生
成される虞はなく、従って半導体ウエーハ8が破損され
る虞は皆無乃至著しく小さい。
After the semiconductor wafer 8 joined to the holder 2 has been subjected to the required machining, the semiconductor wafer 8 is
It is necessary to disengage the holder 2 from the. At this time, an operation similar to the above-described operation when joining the semiconductor wafer 8 to one surface of the holder 2 may be performed.
More specifically with reference to FIG. 3, the supporting surface 14 of the supporting means 16 is formed with the semiconductor wafer 8 in the lower layer and the holder 2 in the upper layer.
Place on top. Then, the holder 2 is heated to, for example, 40 ° C. or higher. An appropriate heating means (not shown) such as an electric resistance heating wire is provided in the support means 16, and the holder 2 can be heated as required by urging the heating means. When the holder 2 is heated, the tackiness of the tack member 6 is reduced or eliminated. Also,
The elastic modulus of the main body 4 is lowered and the main body 4 becomes a rubber state. Then, the semiconductor wafer 8 is made to rest on the support surface 14,
The holder 2 is gradually curved from the flat state shown by the solid line in FIG. 3 to the state shown by the chain double-dashed lines 2C, 2B and 2A in FIG. 3, and one side of the holder 2 is moved from one side (left side in FIG. 3) to the other side. The semiconductor wafer 8 is gradually separated from one side toward the side (right side in FIG. 3). In order to maintain the semiconductor wafer 8 in a stationary state, for example, at least a part of the support surface 14 is formed of a porous material or suction holes or grooves are formed in at least a part of the support surface 14 and the support surface 14 is used as a vacuum source. The semiconductor wafer 8 may be vacuum-adsorbed on the support surface 14 by communicating with each other. Excessive stress is generated in the semiconductor wafer 8 because the detachment of one side of the holder 2 from one side of the semiconductor wafer 8 is gradually advanced from one side to the other side by gradually bending the holder 2. Therefore, there is no risk that the semiconductor wafer 8 will be damaged.

【0017】上述した実施形態においては、保持具2の
片面に半導体ウエーハ8を接合するために保持具2の片
面にタック部材6を接合しているが、所望ならば、これ
に代えて、半導体ウエーハ8の片面及び/又は保持具2
の片面に適宜の粘着乃至接着剤を塗布し、かかる粘着乃
至接着剤によって保持具2の片面に半導体ウエーハ8を
接合するこもできる。この場合には、加熱或いは紫外線
照射によって接合力が低下乃至消失せしめられる粘着乃
至接着着剤を使用し、保持具2の片面から半導体ウエー
ハ8を離脱する際には粘着乃至接着剤を加熱或いは紫外
線照射するのが好都合である。
In the above-described embodiment, the tack member 6 is bonded to one surface of the holder 2 in order to bond the semiconductor wafer 8 to one surface of the holder 2. However, if desired, the tack member 6 may be replaced with a semiconductor. One side of wafer 8 and / or holder 2
It is also possible to apply an appropriate pressure sensitive adhesive or adhesive to one side of and to bond the semiconductor wafer 8 to one side of the holder 2 by means of the pressure sensitive adhesive or adhesive. In this case, an adhesive or adhesive whose bonding strength is reduced or eliminated by heating or UV irradiation is used, and when the semiconductor wafer 8 is detached from one surface of the holder 2, the adhesive or adhesive is heated or UV. It is convenient to irradiate.

【0018】[0018]

【発明の効果】本発明によれば、半導体ウエーハの如き
板状被加工物を気泡を拘束することなく保持具の片面上
に接合することができ、そしてまた被加工物に過剰の応
力を生成せしめることなく保持具から被加工部を離脱せ
しめることができる。
According to the present invention, a plate-like work piece such as a semiconductor wafer can be bonded on one side of a holder without restraining air bubbles, and excessive stress is generated in the work piece. It is possible to disengage the processed portion from the holder without pressing.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に従って構成された保持具の好適実施形
態を示す斜面図。
FIG. 1 is a perspective view of a preferred embodiment of a holder constructed in accordance with the present invention.

【図2】図1に示す保持具の断面図。FIG. 2 is a sectional view of the holder shown in FIG.

【図3】図1に示す保持具に対して被加工物である半導
体ウエーハを接合及び離脱する方法を説明するための断
面図。
FIG. 3 is a cross-sectional view for explaining a method of joining and releasing a semiconductor wafer, which is a workpiece, with respect to the holder shown in FIG.

【符号の説明】[Explanation of symbols]

2:保持具 4:保持具の本体 6:タック部材 8:半導体ウエーハ 10:凹部 12:貫通孔 14:支持面 16:支持手段 2: Holder 4: Main body of holder 6: Tack member 8: Semiconductor wafer 10: Recess 12: Through hole 14: Support surface 16: Supporting means

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】 片面上に板状被加工物を保持する板状保
持具にして、ガラス転移温度よりも高温にせしめられる
とゴム状態になり、ガラス転移温度よりも低温にせしめ
られるとガラス状態になる合成樹脂から形成されてい
る、ことを特徴とする保持具。
1. A plate-shaped holder for holding a plate-shaped work piece on one surface, which becomes a rubber state when heated to a temperature higher than the glass transition temperature, and a glass state when pressed to a temperature lower than the glass transition temperature. The holder is made of a synthetic resin.
【請求項2】 該合成樹脂はポリノルボルネンである、
請求項1記載の保持具。
2. The synthetic resin is polynorbornene,
The holder according to claim 1.
【請求項3】 該片面上にはタック性を有するゴムシー
ト乃至フィルムから構成されたタック部材が接合されて
おり、被加工物は該タック部材を介して該片面上に接合
される、請求項1又は2記載の保持具。
3. A tack member composed of a rubber sheet or film having tackiness is joined to the one surface, and a work piece is joined to the one surface through the tack member. The holder according to 1 or 2.
【請求項4】 該タック部材は40乃至250℃に加熱
されるとタック性が低下する、請求項4記載の保持具。
4. The holder according to claim 4, wherein the tacking property of the tacking member deteriorates when heated to 40 to 250 ° C.
【請求項5】 該タック部材は該ゴムシート乃至フィル
ムの裏面に積層された合成樹脂シート乃至フィルムを含
む、請求項3又は4記載の保持具。
5. The holder according to claim 3, wherein the tack member includes a synthetic resin sheet or film laminated on the back surface of the rubber sheet or film.
【請求項6】 該ゴムシート乃至フィルムの、被加工物
が接合される表面には複数個の凹部が間隔をおいて形成
されている、請求項3から5までのいずかに記載の保持
具。
6. The holding according to any one of claims 3 to 5, wherein a plurality of recesses are formed at intervals on a surface of the rubber sheet or film to which a workpiece is joined. Ingredient
【請求項7】 該ゴムシート乃至フィルムの、被加工物
が接合される表面には、平面図において20乃至50%
の面積割合で該凹部が形成され、該凹部以外は平坦であ
る、請求項6記載の保持具。
7. The surface of the rubber sheet or film to which the workpiece is bonded is 20 to 50% in plan view.
7. The holder according to claim 6, wherein the concave portion is formed in an area ratio of, and is flat except for the concave portion.
【請求項8】 上面から下面まで厚さ方向に貫通する複
数個の貫通孔が形成されている、請求項1から7めでの
いずれかに記載の保持具。
8. The holder according to any one of claims 1 to 7, wherein a plurality of through holes are formed so as to penetrate in the thickness direction from the upper surface to the lower surface.
【請求項9】 被加工物は半導体ウエーハである、請求
項1から7までのいずれかに記載の保持具。
9. The holder according to claim 1, wherein the work piece is a semiconductor wafer.
【請求項10】 請求項1から9までのいずれかに記載
の保持具に被加工物を接合する方法にして、支持手段の
平坦な表面上に被加工物を載置し、次いでガラス転移温
度よりも高温に加熱してゴム状態にせしめた該保持具
を、湾曲せしめた状態から漸次平坦な状態にせしめるこ
とによって、該保持具の片面をその片側から他側に向け
て漸次被加工物に密接せしめる、ことを特徴とする方
法。
10. A method for joining a work piece to the holder according to claim 1, wherein the work piece is placed on a flat surface of the supporting means, and then the glass transition temperature is set. The holding tool, which is heated to a higher temperature than that and made to be in a rubber state, is gradually made flat from a curved state, so that one surface of the holding tool gradually becomes a work piece from one side to the other side. A method characterized by being intimate.
【請求項11】 請求項1から9までのいずれかに記載
の保持具の片面に接合された被加工物を、該保持具の該
片面から離脱する方法にして、支持手段の平坦な表面上
に被加工物が下層に該保持具が上層になる状態に載置
し、かかる載置と同時に或いはその前又は後に該保持具
をガラス転移温度よりも高温に加熱してゴム状態にせし
め、次いで該保持具を平坦な状態から漸次湾曲せしめ
て、該保持具の該片面をその片側から他側に向けて漸次
被加工物から離隔せしめる、ことを特徴とする方法。
11. A flat surface of a support means, comprising a method of separating a workpiece joined to one surface of a holder according to any one of claims 1 to 9 from the one surface of the holder. The work piece is placed on the lower layer in a state in which the holder is in the upper layer, and at the same time as or before or after such placing, the holder is heated to a temperature higher than the glass transition temperature to be in a rubber state, and then, A method of gradually bending the holder from a flat state to gradually separate the one surface of the holder from one side of the holder to the other side of the work piece.
JP2001247919A 2001-08-17 2001-08-17 Holding tool and workpiece joining and detaching method to/from the same Pending JP2003053639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001247919A JP2003053639A (en) 2001-08-17 2001-08-17 Holding tool and workpiece joining and detaching method to/from the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001247919A JP2003053639A (en) 2001-08-17 2001-08-17 Holding tool and workpiece joining and detaching method to/from the same

Publications (1)

Publication Number Publication Date
JP2003053639A true JP2003053639A (en) 2003-02-26

Family

ID=19077158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001247919A Pending JP2003053639A (en) 2001-08-17 2001-08-17 Holding tool and workpiece joining and detaching method to/from the same

Country Status (1)

Country Link
JP (1) JP2003053639A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005199380A (en) * 2004-01-15 2005-07-28 Fujikura Rubber Ltd Buffer material for sucking and holding
JP2005243780A (en) * 2004-02-25 2005-09-08 Hitachi Chem Co Ltd Wafer-supporting member and wafer-processing method
JP2007103415A (en) * 2005-09-30 2007-04-19 Shin Etsu Polymer Co Ltd Back grind protection tape of semiconductor wafer
JP2007326208A (en) * 2005-11-28 2007-12-20 Denso Corp Workpiece fixing jig and machining method using the same
JP2011018769A (en) * 2009-07-09 2011-01-27 Shin Etsu Polymer Co Ltd Size adjustment jig for substrate
JP7418271B2 (en) 2020-04-13 2024-01-19 株式会社ディスコ Jig table and division method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748243U (en) * 1980-09-02 1982-03-18
JPS62267384A (en) * 1986-05-15 1987-11-20 Sun A Chem Ind Co Ltd Dicing tape
JPH04309583A (en) * 1991-04-04 1992-11-02 Dainippon Printing Co Ltd Self-adhesive sheet
JPH1126562A (en) * 1997-07-08 1999-01-29 Oki Electric Ind Co Ltd Wafer mount and method of treatment back surface of wafer
JPH11192659A (en) * 1997-10-09 1999-07-21 Asahi Optical Co Ltd Manufacture of porous film and device therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748243U (en) * 1980-09-02 1982-03-18
JPS62267384A (en) * 1986-05-15 1987-11-20 Sun A Chem Ind Co Ltd Dicing tape
JPH04309583A (en) * 1991-04-04 1992-11-02 Dainippon Printing Co Ltd Self-adhesive sheet
JPH1126562A (en) * 1997-07-08 1999-01-29 Oki Electric Ind Co Ltd Wafer mount and method of treatment back surface of wafer
JPH11192659A (en) * 1997-10-09 1999-07-21 Asahi Optical Co Ltd Manufacture of porous film and device therefor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005199380A (en) * 2004-01-15 2005-07-28 Fujikura Rubber Ltd Buffer material for sucking and holding
JP2005243780A (en) * 2004-02-25 2005-09-08 Hitachi Chem Co Ltd Wafer-supporting member and wafer-processing method
JP2007103415A (en) * 2005-09-30 2007-04-19 Shin Etsu Polymer Co Ltd Back grind protection tape of semiconductor wafer
JP2007326208A (en) * 2005-11-28 2007-12-20 Denso Corp Workpiece fixing jig and machining method using the same
JP2011018769A (en) * 2009-07-09 2011-01-27 Shin Etsu Polymer Co Ltd Size adjustment jig for substrate
JP7418271B2 (en) 2020-04-13 2024-01-19 株式会社ディスコ Jig table and division method

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