JP2005243780A - Wafer-supporting member and wafer-processing method - Google Patents
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Abstract
Description
本発明はウエハ支持部材及びウエハの加工方法に関する。 The present invention relates to a wafer support member and a wafer processing method.
電子機器の小型化の要請から、極薄半導体ウエハが必要とされているが、極薄ウエハはそりやわれが発生しやすいため、ウエハの加工工程においてガラス板、金属板などの支持体を貼付け、加工後にそれらをウエハから剥離することで、そりやわれを防止することが行われている。従来、ウエハと支持体の貼付には、液状ワックスや粘着テープなどによっていたが、これらはボイドレスでウエハを貼り付けにくい、ウエハを割ることなく剥離しにくい、または、ウエハ表面に汚染が残存しやすいという課題があった。また、刺激によりガスが発生し剥離するものがあるが、光などをウエハに照射する工程を経る必要があり、工程管理が難しくなっていた。 Ultra-thin semiconductor wafers are required due to the demand for miniaturization of electronic equipment, but because ultra-thin wafers are prone to warping and cracking, a support such as a glass plate or metal plate is pasted in the wafer processing process. In order to prevent warping and cracking, the wafers are peeled off from the wafer after processing. Conventionally, the wafer and the support were attached with liquid wax or adhesive tape, but these were difficult to stick the wafer with a voidless, difficult to peel without breaking the wafer, or contamination on the wafer surface was likely to remain. There was a problem. Further, some gas is generated and peeled off by stimulation, but it is necessary to go through a process of irradiating the wafer with light or the like, and process management becomes difficult.
本発明は、ウエハを固定可能で、かつ加工後にウエハを容易に剥離可能にしたことを特徴とする。 The present invention is characterized in that the wafer can be fixed and can be easily peeled off after processing.
ウエハを支持部材にボイドレスで貼付可能であり、剥離時に熱、UVなどの刺激が不要で、ウエハをほとんど変形させずに剥離可能なウエハ支持部材が求められていた。上記目的を達成するために、本発明は，室温のたわみ量が１０mm以下であり、応力下で変形可能なシートとウエハを接着可能な室温で柔軟で、少なくとも一方の面が粘着剤を有さないかピール強度が２０N/m以下であるフィルムからなるウエハ支持部材から構成される。 There has been a demand for a wafer support member that can be attached to a support member with a voidless dress, does not require heat and UV stimulation at the time of peeling, and can be peeled off with almost no deformation of the wafer. In order to achieve the above object, the present invention has a deflection amount of 10 mm or less at room temperature, is flexible at room temperature and can be bonded to a sheet that can be deformed under stress, and has at least one surface having an adhesive. Or a wafer supporting member made of a film having a peel strength of 20 N / m or less.
すなわち、本発明は以下の発明に関する。
<１> 室温のたわみ量が１０mm以下であり、応力下で変形可能なシートと少なくとも一方の面にピール強度が２０N/m以下であるウエハ固定部材を有することを特徴とするウエハ支持部材。
<２> <１>に記載のウエハ支持部材とウエハを貼り合わせ後、ウエハに必要な加工を施した後、応力下で変形可能なシートを変形させることにより、ウエハを剥離することを特徴とするウエハの加工方法。
<３>室温のたわみ量が１０mm以下であり軟化温度が４０〜２５０℃であるプラスチックシートとウエハ固定用のウエハ固定部材からなり、プラスチックシートとウエハ支持部材とウエハを貼り合わせ後、ウエハに必要な加工を施した後、プラスチックシートの軟化温度以上に加熱し、応力下で変形することにより、ウエハを剥離することを特徴とする<２>に記載のウエハの加工方法。
That is, the present invention relates to the following inventions.
<1> A wafer support member comprising: a sheet having a deflection amount of 10 mm or less at room temperature; a sheet that can be deformed under stress; and a wafer fixing member having a peel strength of 20 N / m or less on at least one surface.
<2> After the wafer supporting member described in <1> is bonded to the wafer, the wafer is peeled off by deforming a deformable sheet under stress after performing necessary processing on the wafer. Wafer processing method.
<3> It consists of a plastic sheet with a deflection at room temperature of 10 mm or less and a softening temperature of 40 to 250 ° C. and a wafer fixing member for fixing the wafer. <2> The method for processing a wafer according to <2>, wherein the wafer is peeled off after being subjected to various processing and heated to a temperature equal to or higher than the softening temperature of the plastic sheet and deformed under stress.
本発明のウエハ支持部材を使用することにより、ウエハを支持部材に貼付可能であり、ウエハの固定が可能である。また、ウエハ支持部材を変形することにより、容易にウエハを剥離することが可能である。 By using the wafer support member of the present invention, the wafer can be attached to the support member, and the wafer can be fixed. Further, the wafer can be easily peeled by deforming the wafer support member.
本発明に使用するシートは、図１に示す測定法で得られるたわみ量が１０ｍｍ以下であり、応力下で変形可能あれば、特に制限はなく、ガラス板、プラスチック板、金属板などが使用できる、特に、容易に変形可能で、割れにくい、ポリスチレン、ポリプロピレン、ポリカーボネート、硬質塩化ビニル樹脂、アクリル樹脂、エポキシ樹脂などのプラスチック板が好ましい。厚さは0.1〜10mmが好ましい。特に、経済的であり、シートのたわみが少なく、ウエハを貼り付けた状態で取扱い性が良い点で0.3〜５ｍｍが好ましく、さらに好ましくは0.5〜３ｍｍである。高温下でシートが柔らかくなった状態で応力を印加し、たわませることが好ましい。軟化温度が４０〜２５０℃であることが好ましく、そりが小さく、ウエハの変形が少ない点で４０〜１００℃がさらに好ましく、このようなものとして、硬質塩化ビニル樹脂、ポリエステル、アクリル樹脂などが挙げられる。 The sheet used in the present invention is not particularly limited as long as the amount of deflection obtained by the measurement method shown in FIG. 1 is 10 mm or less and can be deformed under stress, and a glass plate, a plastic plate, a metal plate, or the like can be used. In particular, plastic plates such as polystyrene, polypropylene, polycarbonate, hard vinyl chloride resin, acrylic resin, and epoxy resin that are easily deformable and difficult to break are preferable. The thickness is preferably 0.1 to 10 mm. In particular, the thickness is preferably 0.3 to 5 mm, more preferably 0.5 to 3 mm, because it is economical, has little sheet deflection, and is easy to handle in a state where a wafer is attached. It is preferable to apply a stress in a state where the sheet is softened at a high temperature to bend. The softening temperature is preferably 40 to 250 ° C., and 40 to 100 ° C. is more preferable in terms of small warpage and less deformation of the wafer. It is done.
支持体とウエハとの固定には、粘着性または接着性を示すフィルム、液状樹脂などが使用される。市販されているBGテープ、ダイシングテープなどが使用でき、剥離後に半導体ウエハに樹脂が付着しないことが好ましい。特に、粘着剤を有さないかピール強度が１〜２０N/m以下であるフィルムを使用することが好ましい。ピール強度が２０N/mを超える場合は、ウエハが剥離せず、割れるため好ましくない。また、粘着剤を有さない場合でも、フィルムが自己粘着性が有し、ピール強度が１N/m以上であればよい。 For fixing the support and the wafer, a film exhibiting adhesiveness or adhesiveness, a liquid resin, or the like is used. Commercially available BG tape, dicing tape or the like can be used, and it is preferable that the resin does not adhere to the semiconductor wafer after peeling. In particular, it is preferable to use a film that does not have an adhesive or has a peel strength of 1 to 20 N / m or less. A peel strength exceeding 20 N / m is not preferable because the wafer does not peel and breaks. Moreover, even when it does not have an adhesive, a film should just have self-adhesiveness and a peel strength may be 1 N / m or more.
特に、室温で剥離する場合には、剥離しやすい点で、粘着剤を有さないほうが好ましい。 In particular, when peeling at room temperature, it is preferable not to have an adhesive in terms of easy peeling.
シートとウエハとの固定部材には、少なくとも一方の面が粘着剤を有さないかピール強度が２０N/m以下であるフィルムが使用できる。ピール強度が２0N/mを超える場合は、ウエハが剥離せず、割れることがある。また、粘着剤を有さない場合でも、フィルムが自己粘着性が有していればよく、粘着フィルムを貼り付けておいても良い。このような粘着フィルムとしては市販されているBGテープ、ダイシングテープなどが使用できる。また、熱、光などの刺激により架橋、ゲル化する接着成分を使用しても良い。熱、光などの刺激によりゲル化する接着成分としては、架橋性成分と非架橋性成分の組合せであることが好ましく、熱、光で架橋する架橋性成分としては、エポキシ樹脂、アクリル樹脂、シアネート樹脂、フェノール樹脂などがあり、光で架橋するものが低温、短時間で架橋可能な点で好ましい。非架橋性成分としては、各種溶剤、反応性希釈剤、可塑剤などが好ましい。 As the fixing member for the sheet and the wafer, a film having at least one surface not having an adhesive or having a peel strength of 20 N / m or less can be used. When the peel strength exceeds 20 N / m, the wafer may not be peeled off and may be broken. Moreover, even when it does not have an adhesive, the film should just have self-adhesiveness, and you may affix the adhesive film. As such an adhesive film, a commercially available BG tape, dicing tape, or the like can be used. Moreover, you may use the adhesive component which bridge | crosslinks and gelatinizes by irritation | stimulation, such as a heat | fever and light. The adhesive component that gels upon stimulation with heat, light, etc. is preferably a combination of a crosslinkable component and a non-crosslinkable component, and the crosslinkable component that crosslinks with heat or light can be an epoxy resin, an acrylic resin, or a cyanate. There are resins, phenol resins, and the like, and those that are crosslinked by light are preferable in that they can be crosslinked at a low temperature in a short time. As the non-crosslinkable component, various solvents, reactive diluents, plasticizers and the like are preferable.
架橋性成分としては、アクリル多官能オリゴマー又はモノマーなどの光重合性不飽和化合物と光重合開始剤の組合せが挙げられる。 Examples of the crosslinkable component include a combination of a photopolymerizable unsaturated compound such as an acrylic polyfunctional oligomer or monomer and a photopolymerization initiator.
以下、本発明のウエハ支持部材について、実施例により、具体的に説明するが、本発明は，これに制限されるものではない。
実施例１
Hereinafter, the wafer support member of the present invention will be specifically described with reference to examples, but the present invention is not limited thereto.
Example 1
ウエハとして直径６inch、厚さ300μｍのシリコンウエハ、支持部材として厚さ１ｍｍ、２０cm四方の硬質塩化ビニル板を用意した。図１〜３に示すように、硬質塩化ビニル板上に 柔軟な塩化ビニルフィルム基材の片面に粘着剤を塗布した粘着フィルム（日立化成工業（株）製、HAE1503L（商品名）を用いた。）を粘着剤面が硬質塩化ビニル板と接するように室温でラミネートした。塩化ビニルフィルム基材とウエハが接するように貼り付けた。この状態でウエハをボイドが混入することなくウエハの固定が可能であった。この状態でウエハを50μｍの厚さになるよう研磨した。次に図のように硬質塩化ビニル板に圧縮応力（２０N）を加え、硬質塩化ビニル板をたわませた。ウエハはクラックが入ることなく剥離できた。ウエハの表面にはウエハ支持部材の転写は見られなかった。
実施例２
A silicon wafer having a diameter of 6 inches and a thickness of 300 μm was prepared as a wafer, and a rigid vinyl chloride plate having a thickness of 1 mm and a 20 cm square was prepared as a support member. As shown in FIGS. 1 to 3, an adhesive film (manufactured by Hitachi Chemical Co., Ltd., HAE1503L (trade name)) in which an adhesive was applied to one side of a flexible vinyl chloride film substrate on a hard vinyl chloride plate was used. ) Was laminated at room temperature so that the adhesive surface was in contact with the hard vinyl chloride plate. The film was attached so that the vinyl chloride film substrate and the wafer were in contact. In this state, it was possible to fix the wafer without mixing the voids. In this state, the wafer was polished to a thickness of 50 μm. Next, as shown in the figure, a compressive stress (20 N) was applied to the hard vinyl chloride plate, and the hard vinyl chloride plate was bent. The wafer could be peeled without cracks. No transfer of the wafer support member was observed on the surface of the wafer.
Example 2
ウエハとして直径６inch、厚さ300μｍのシリコンウエハ、支持部材として厚さ１ｍｍ、２０cm四方のポリプロピレン板を用意した。図１〜３に示すように、ポリプロピレン板上にUV硬化樹脂を塗布し、ウエハを貼付他後、UV照射により、ウエハを固定した。ウエハはボイドが混入することなく固定が可能であった。
この状態でウエハを50μｍの厚さになるよう研磨した。次に図のようにポリプロピレン板に圧縮応力（２０N)を加え、たわませた。ウエハはクラックが入ることなく剥離できた。ウエハの表面にはウエハ支持部材の転写は見られなかった。
実施例３
A silicon wafer having a diameter of 6 inches and a thickness of 300 μm was prepared as a wafer, and a polypropylene plate having a thickness of 1 mm and a 20 cm square was prepared as a support member. As shown in FIGS. 1 to 3, a UV curable resin was applied on a polypropylene plate, the wafer was attached, and the wafer was fixed by UV irradiation. The wafer could be fixed without mixing voids.
In this state, the wafer was polished to a thickness of 50 μm. Next, as shown in the figure, a compressive stress (20 N) was applied to the polypropylene plate and bent. The wafer could be peeled without cracks. No transfer of the wafer support member was observed on the surface of the wafer.
Example 3
ウエハとして直径６inch、厚さ300μｍのシリコンウエハ、支持部材として厚さ１ｍｍ、２０cm四方の硬質塩化ビニル板を用意した。柔軟な塩化ビニルフィルムの片面に粘着剤を塗布した粘着フィルムの粘着剤面とウエハが接するように貼り付け、ウエハの外周に沿って粘着フィルムを切断し、外縁部の粘着フィルムを除去した。次に、硬質塩化ビニル板上粘着フィルムの基材面側が接するようにウエハとラミネートした。硬質塩化ビニル板と接するように室温でラミネートした。この状態でウエハをボイドが混入することなくウエハの固定が可能であった。この状態でウエハを50μｍの厚さになるよう研磨した。次に図のように硬質塩化ビニル板に圧縮応力（２０N)を加え、硬質塩化ビニル板をたわませた。ウエハはクラックが入ることなく剥離できた。ウエハの表面には粘着フィルムが残存しているが、粘着フィルムは容易に除去可能あり、除去後に、粘着剤の転写は見られなかった。
実施例４
A silicon wafer having a diameter of 6 inches and a thickness of 300 μm was prepared as a wafer, and a rigid vinyl chloride plate having a thickness of 1 mm and a 20 cm square was prepared as a support member. The adhesive film was applied to one side of a flexible vinyl chloride film so that the adhesive surface of the adhesive film was in contact with the wafer, the adhesive film was cut along the outer periphery of the wafer, and the adhesive film at the outer edge was removed. Next, it laminated | stacked with the wafer so that the base-material surface side of the adhesion film on a hard vinyl chloride board might contact | connect. Lamination was performed at room temperature so as to be in contact with the hard vinyl chloride plate. In this state, it was possible to fix the wafer without mixing the voids. In this state, the wafer was polished to a thickness of 50 μm. Next, compressive stress (20N) was applied to the hard vinyl chloride plate as shown in the figure, and the hard vinyl chloride plate was bent. The wafer could be peeled without cracks. Although the adhesive film remained on the surface of the wafer, the adhesive film was easily removable, and no transfer of the adhesive was observed after the removal.
Example 4
ウエハとして直径６inch、厚さ300μｍのシリコンウエハ、支持部材として厚さ１ｍｍ、２０cm四方の硬質塩化ビニル板を用意した。柔軟な塩化ビニルフィルムの片面に両面に粘着剤を塗布した粘着フィルムと硬質塩化ビニル板上が接するように貼り付け、次にウエハを貼り付けた。ウエハの外周に沿って粘着フィルムを切断し、外縁部の粘着フィルムを除去した。ウエハをボイドが混入することなくウエハの固定が可能であった。この状態でウエハを50μｍの厚さになるよう研磨した。次に100℃に加熱し、硬質塩化ビニル板と粘着フィルムをウエハから剥離した。ウエハはクラックが入ることなく剥離できた。ウエハの表面に粘着剤の転写は見られなかった。
比較例１
A silicon wafer having a diameter of 6 inches and a thickness of 300 μm was prepared as a wafer, and a rigid vinyl chloride plate having a thickness of 1 mm and a 20 cm square was prepared as a support member. A flexible vinyl chloride film was attached to one side so that the adhesive film coated with an adhesive on both sides was in contact with the hard vinyl chloride plate, and then the wafer was attached. The adhesive film was cut | disconnected along the outer periphery of a wafer, and the adhesive film of the outer edge part was removed. It was possible to fix the wafer without mixing the voids. In this state, the wafer was polished to a thickness of 50 μm. Next, it heated to 100 degreeC and the hard vinyl chloride board and the adhesive film were peeled from the wafer. The wafer could be peeled without cracks. No transfer of the adhesive was observed on the surface of the wafer.
Comparative Example 1
硬質塩化ビニル板上に柔軟な塩化ビニルフィルム基材の片面に粘着剤を塗布した粘着フィルム（日立化成工業（株）製HAE1506を用いた）の基材面が硬質塩化ビニル板と接するようラミネートし、また、粘着剤面がウエハと接するようラミネートした他は実施例１と同様にウエハを固定した。この状態でウエハを50μｍの厚さになるよう研磨した。次に図のように硬質塩化ビニル板に圧縮応力（２０N）を加え、硬質塩化ビニル板をたわませた。ウエハは剥離せず、全面にクラックが入った。
比較例２
Lamination is done so that the substrate surface of the adhesive film (using Hitachi Chemical Co., Ltd. HAE1506) coated with adhesive on one side of a flexible vinyl chloride film substrate on a hard vinyl chloride plate is in contact with the hard vinyl chloride plate. Further, the wafer was fixed in the same manner as in Example 1 except that the adhesive surface was laminated so as to be in contact with the wafer. In this state, the wafer was polished to a thickness of 50 μm. Next, as shown in the figure, a compressive stress (20 N) was applied to the hard vinyl chloride plate to bend the hard vinyl chloride plate. The wafer did not peel and cracks were found on the entire surface.
Comparative Example 2
室温で支持部材を剥離しようとした他は実施例１と同様にした。
ウエハは剥離せず、全面にクラックが入った。
The same procedure as in Example 1 was performed except that the support member was peeled off at room temperature.
The wafer did not peel and cracks were found on the entire surface.
Claims (3)
It consists of a plastic sheet having a deflection at room temperature of 10 mm or less and a softening temperature of 40 to 250 ° C. and a wafer fixing member for fixing the wafer. 3. The wafer processing method according to claim 2, wherein after the application, the wafer is peeled off by heating to a temperature higher than the softening temperature of the plastic sheet and deforming under stress.
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| JP2004049494A JP4321305B2 (en) | 2004-02-25 | 2004-02-25 | Wafer processing method |
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| JP2004049494A JP4321305B2 (en) | 2004-02-25 | 2004-02-25 | Wafer processing method |
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| JP4321305B2 JP4321305B2 (en) | 2009-08-26 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008141162A (en) * | 2006-11-09 | 2008-06-19 | Hitachi Chem Co Ltd | Member for supporting semiconductor and method of working semiconductor device |
| JP2008171934A (en) * | 2007-01-10 | 2008-07-24 | Lintec Corp | Protective structure of fragile member, and processing method for fragile member |
| JP2008306049A (en) * | 2007-06-08 | 2008-12-18 | Lintec Corp | Brittle component processing method |
| JP2011181941A (en) * | 2011-04-15 | 2011-09-15 | Lintec Corp | Method for processing semiconductor wafer |
| JP2013034011A (en) * | 2012-11-05 | 2013-02-14 | Lintec Corp | Semiconductor wafer processing method |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0582492A (en) * | 1991-09-20 | 1993-04-02 | Sony Corp | Method of grinding rear of semiconductor wafer |
| JPH08222535A (en) * | 1995-02-16 | 1996-08-30 | Mitsui Toatsu Chem Inc | Method of using adhesive tape for protection of surface of semiconductor wafer |
| JPH11224869A (en) * | 1998-02-05 | 1999-08-17 | Mitsui Chem Inc | Peeling method for adhesive film for surface protection at manufacturing of semiconductor wafer |
| JPH11345790A (en) * | 1998-06-02 | 1999-12-14 | Mitsui Chem Inc | Adhesive tape for protecting surface of semiconductor wafer surface and its usage |
| JPH11345793A (en) * | 1998-03-30 | 1999-12-14 | Mitsui Chem Inc | Rear grinding method of semiconductor wafer |
| JP2001323228A (en) * | 2000-05-15 | 2001-11-22 | Nitto Denko Corp | Heat release adhesive sheet |
| JP2003053639A (en) * | 2001-08-17 | 2003-02-26 | Disco Abrasive Syst Ltd | Holding tool and workpiece joining and detaching method to/from the same |
| JP2003142433A (en) * | 2001-08-10 | 2003-05-16 | Nitto Denko Corp | Dicing adhesive sheet and dicing method |
| JP2003151930A (en) * | 2001-11-09 | 2003-05-23 | Toyo Chem Co Ltd | Semiconductor wafer protecting sheet |
| JP2003332280A (en) * | 2002-05-14 | 2003-11-21 | Disco Abrasive Syst Ltd | Method of supporting semiconductor wafer |
| JP2004022784A (en) * | 2002-06-17 | 2004-01-22 | Nitto Denko Corp | Adhesive sheet for processing wafer |
| JP2004026953A (en) * | 2002-06-24 | 2004-01-29 | Three M Innovative Properties Co | Film adhesive, semiconductor device, and its production method |
-
2004
- 2004-02-25 JP JP2004049494A patent/JP4321305B2/en not_active Expired - Fee Related
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0582492A (en) * | 1991-09-20 | 1993-04-02 | Sony Corp | Method of grinding rear of semiconductor wafer |
| JPH08222535A (en) * | 1995-02-16 | 1996-08-30 | Mitsui Toatsu Chem Inc | Method of using adhesive tape for protection of surface of semiconductor wafer |
| JPH11224869A (en) * | 1998-02-05 | 1999-08-17 | Mitsui Chem Inc | Peeling method for adhesive film for surface protection at manufacturing of semiconductor wafer |
| JPH11345793A (en) * | 1998-03-30 | 1999-12-14 | Mitsui Chem Inc | Rear grinding method of semiconductor wafer |
| JPH11345790A (en) * | 1998-06-02 | 1999-12-14 | Mitsui Chem Inc | Adhesive tape for protecting surface of semiconductor wafer surface and its usage |
| JP2001323228A (en) * | 2000-05-15 | 2001-11-22 | Nitto Denko Corp | Heat release adhesive sheet |
| JP2003142433A (en) * | 2001-08-10 | 2003-05-16 | Nitto Denko Corp | Dicing adhesive sheet and dicing method |
| JP2003053639A (en) * | 2001-08-17 | 2003-02-26 | Disco Abrasive Syst Ltd | Holding tool and workpiece joining and detaching method to/from the same |
| JP2003151930A (en) * | 2001-11-09 | 2003-05-23 | Toyo Chem Co Ltd | Semiconductor wafer protecting sheet |
| JP2003332280A (en) * | 2002-05-14 | 2003-11-21 | Disco Abrasive Syst Ltd | Method of supporting semiconductor wafer |
| JP2004022784A (en) * | 2002-06-17 | 2004-01-22 | Nitto Denko Corp | Adhesive sheet for processing wafer |
| JP2004026953A (en) * | 2002-06-24 | 2004-01-29 | Three M Innovative Properties Co | Film adhesive, semiconductor device, and its production method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008141162A (en) * | 2006-11-09 | 2008-06-19 | Hitachi Chem Co Ltd | Member for supporting semiconductor and method of working semiconductor device |
| JP2008171934A (en) * | 2007-01-10 | 2008-07-24 | Lintec Corp | Protective structure of fragile member, and processing method for fragile member |
| JP2008306049A (en) * | 2007-06-08 | 2008-12-18 | Lintec Corp | Brittle component processing method |
| JP4729003B2 (en) * | 2007-06-08 | 2011-07-20 | リンテック株式会社 | Processing method for brittle members |
| US8113914B2 (en) | 2007-06-08 | 2012-02-14 | Lintec Corporation | Treating method for brittle member |
| TWI491469B (en) * | 2007-06-08 | 2015-07-11 | Lintec Corp | The treatment of brittle parts |
| TWI509734B (en) * | 2007-06-08 | 2015-11-21 | Lintec Corp | Treating method for brittle member |
| JP2011181941A (en) * | 2011-04-15 | 2011-09-15 | Lintec Corp | Method for processing semiconductor wafer |
| JP2013034011A (en) * | 2012-11-05 | 2013-02-14 | Lintec Corp | Semiconductor wafer processing method |
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| JP4321305B2 (en) | 2009-08-26 |
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