JP2005199380A - Buffer material for sucking and holding - Google Patents

Buffer material for sucking and holding Download PDF

Info

Publication number
JP2005199380A
JP2005199380A JP2004007619A JP2004007619A JP2005199380A JP 2005199380 A JP2005199380 A JP 2005199380A JP 2004007619 A JP2004007619 A JP 2004007619A JP 2004007619 A JP2004007619 A JP 2004007619A JP 2005199380 A JP2005199380 A JP 2005199380A
Authority
JP
Japan
Prior art keywords
holding
base material
film
sucking
dlc film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004007619A
Other languages
Japanese (ja)
Inventor
Shugo Takahashi
秀剛 高橋
Tatsuyuki Suzuki
達幸 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Composites Inc
Original Assignee
Fujikura Rubber Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Rubber Ltd filed Critical Fujikura Rubber Ltd
Priority to JP2004007619A priority Critical patent/JP2005199380A/en
Publication of JP2005199380A publication Critical patent/JP2005199380A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manipulator (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a buffer material for sucking and holding which can easily and securely carry out attaching/detaching of an object to be held in sucking and holding work. <P>SOLUTION: The buffer material 1 is provided with a DLC (Diamond Like Carbon)film 3 on at least one surface of a base material 2, and has a suction hole passing through from a front surface to a rear surface. The buffer material 1 is used so as to allow the DLC film 3 to abut on the object to be held, thus the DLC film 3 is brought into close contact with the object to be held while flexibility of the base material 2 is being shown and sucking and holding are securely carried out. When sucking is released, the object to be held is easily separated due to lubricity of the DLC film 3. The DLC film 3 has moderate stiffness, thus a surface of the buffer material 1 is prevented from being damaged even when attaching/detaching by sucking and holding is repeated. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、定盤や回転基板等の保持体に被保持体を吸引保持する際に、保持体と被保持体との間に介在させる緩衝材に関する。   The present invention relates to a cushioning material interposed between a holding body and a held body when the held body is sucked and held by a holding body such as a surface plate or a rotating substrate.

従来から、定盤や回転基板等の保持体に、ガラス、シリコンウエハ、金属等の被保持体を保持した状態で所望の加工、研磨等を施すことが行なわれており、被保持体の保持方法の一つとして吸引保持が用いられている。
一般に、定盤や回転基板等の保持体に、ガラス、シリコンウエハ、金属等の被保持体を吸引保持する場合、両者の密着性を高めるために緩衝材が使用されている。例えば、シリコンウエハの研磨装置（特許文献１、２）等では、回転基板にシリコンウエハを吸引保持する際に、ゴム製のバッキング材が緩衝材として使用されている。
特開平７−１１２３６１号公報 特開２００１−３４５２９８号公報 Conventionally, a holder, such as a platen or a rotating substrate, has been subjected to desired processing, polishing, etc. while holding a support such as glass, silicon wafer, or metal. As one of the methods, suction holding is used.
In general, when holding a held body such as glass, silicon wafer, or metal on a holding body such as a surface plate or a rotating substrate, a cushioning material is used to improve the adhesion between them. For example, in a silicon wafer polishing apparatus (Patent Documents 1 and 2) and the like, a rubber backing material is used as a cushioning material when a silicon wafer is sucked and held on a rotating substrate.
JP-A-7-112361 JP 2001-345298 A

しかしながら、従来のゴム製の緩衝材は、吸引を解除した際に、被保持体の引き離しが円滑に行なえない場合があり、吸引保持による着脱を繰り返すことにより、緩衝材の表面が損傷して吸引保持性能が低下するという問題があった。
本発明は、このような実情に鑑みてなされたものであり、吸引保持における被保持体の着脱を容易、かつ確実に行なうことが可能な吸引保持用の緩衝材を提供することを目的とする。 However, with the conventional rubber cushioning material, when the suction is released, the object to be held may not be able to be pulled away smoothly. There was a problem that the holding performance deteriorated.
The present invention has been made in view of such circumstances, and an object of the present invention is to provide a cushioning material for suction and holding that can easily and reliably attach and detach a held body in suction and holding. .

このような目的を達成するために、本発明は、基材と、該基材の少なくとも一方の面に配設されたＤＬＣ（Diamond Like Carbon）膜とを備え、表裏貫通する吸引孔を有するような構成とした。
本発明の好ましい態様として、前記基材はゴム基材または樹脂基材であり、基材の硬度は５〜９０の範囲であるような構成とした。 In order to achieve such an object, the present invention includes a base material and a DLC (Diamond Like Carbon) film disposed on at least one surface of the base material, and has a suction hole penetrating front and back. The configuration was
As a preferred embodiment of the present invention, the base material is a rubber base material or a resin base material, and the base material has a hardness in the range of 5 to 90.

本発明の好ましい態様として、前記基材の厚みは０．０５〜５ｍｍの範囲であるような構成とした。
本発明の好ましい態様として、前記ＤＬＣ（Diamond Like Carbon）膜の膜密度は１．６〜１．９ｇ／ｃｍ3の範囲であるような構成とした。
本発明の好ましい態様として、前記ＤＬＣ（Diamond Like Carbon）膜側における硬度は１０００〜４０００の範囲であるような構成とした。 As a preferred embodiment of the present invention, the base material has a thickness in the range of 0.05 to 5 mm.
As a preferred embodiment of the present invention, the DLC (Diamond Like Carbon) film has a density in the range of 1.6 to 1.9 g / cm 3 .
As a preferred embodiment of the present invention, the hardness on the DLC (Diamond Like Carbon) film side is in the range of 1000 to 4000.

本発明では、ＤＬＣ（Diamond Like Carbon）膜を被保持体に当接するように緩衝材を使用することにより、ＤＬＣ膜が基材の柔軟性を発現しながら被保持体に密着して吸引保持が確実に行われ、吸引を解除したときには、ＤＬＣ膜の有する潤滑性により被保持体を容易に引き離すことができ、また、ＤＬＣ膜は適度の硬度を有するので、吸引保持による着脱を繰り返しても、緩衝材の表面が損傷することを防止するという効果が奏される。   In the present invention, by using a cushioning material so that a DLC (Diamond Like Carbon) film is in contact with the object to be held, the DLC film is in close contact with the object to be held while exhibiting the flexibility of the base material, so that suction holding When it is reliably performed and suction is released, the DLC film can be easily detached due to the lubricity of the DLC film, and the DLC film has an appropriate hardness. The effect of preventing the surface of the cushioning material from being damaged is exhibited.

本発明の実施形態について図面を参照しながら説明する。
図１は、本発明の吸引保持用の緩衝材の一実施形態を示す平面図であり、図２は図１に示される緩衝材のＡ−Ａ線断面図である。図１および図２において、吸引保持用の緩衝材１は、基材２と、この基材２の一方の面に配設されたＤＬＣ（Diamond Like Carbon）膜３とを備えた円盤形状をなし、表裏貫通する複数の吸引孔４を有している。 Embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view showing an embodiment of the shock-absorbing cushioning material of the present invention, and FIG. 2 is a cross-sectional view of the cushioning material shown in FIG. In FIG. 1 and FIG. 2, the suction holding cushioning material 1 has a disk shape including a base material 2 and a DLC (Diamond Like Carbon) film 3 disposed on one surface of the base material 2. And a plurality of suction holes 4 penetrating the front and back.

緩衝材１を構成する基材２は、ゴム基材または樹脂基材であり、保持体と被保持体との間に介在して吸引保持機能を発現できるものであれば特に制限はない。ゴム基材としては、例えば、ブチルゴム、エチレンプロピレンゴム、塩素化ポリエチレンゴム、クロロプレンゴム、アクリルゴム、二トリルゴム、エピクロルヒドリンゴム、ウレタンゴム、シリコーンゴム、フッ素ゴム、天然ゴム等を用いることができる。また、樹脂基材としては、熱硬化性樹脂、熱可塑性樹脂等を用いた基材であってよい。使用する樹脂としては、例えば、エポキシ樹脂、フェノール樹脂、尿素樹脂、キシレン樹脂、不飽和ポリエステル樹脂、シリコーン樹脂、ジアリルフタレート樹脂等の熱硬化性樹脂、ビニル系樹脂、ポリ塩化ビニリデン、塩素化ポリエーテル、ポリエステル系樹脂、ポリエチレン樹脂、ポリプロピレン樹脂、ポリアセタール樹脂、アクリル系樹脂、ポリアミド系樹脂、セルロース系樹脂、ポリカーボネート樹脂、フッ素系樹脂、ポリウレタン樹脂等の熱可塑性樹脂等を挙げることができる。   The base material 2 constituting the cushioning material 1 is a rubber base material or a resin base material, and is not particularly limited as long as it can be interposed between the holding body and the held body to exhibit the suction holding function. As the rubber base material, for example, butyl rubber, ethylene propylene rubber, chlorinated polyethylene rubber, chloroprene rubber, acrylic rubber, nitrile rubber, epichlorohydrin rubber, urethane rubber, silicone rubber, fluorine rubber, natural rubber and the like can be used. The resin base material may be a base material using a thermosetting resin, a thermoplastic resin, or the like. Examples of resins used include thermosetting resins such as epoxy resins, phenol resins, urea resins, xylene resins, unsaturated polyester resins, silicone resins and diallyl phthalate resins, vinyl resins, polyvinylidene chloride, and chlorinated polyethers. And thermoplastic resins such as polyester resins, polyethylene resins, polypropylene resins, polyacetal resins, acrylic resins, polyamide resins, cellulose resins, polycarbonate resins, fluorine resins, and polyurethane resins.

このような基材２の硬度は、ＤＬＣ膜３の硬度、緩衝材１に要求される硬度等を考慮して適宜設定することができるが、例えば、５〜９０、好ましくは３０〜７０の範囲で設定することができる。また、基材２の厚みは特に制限されず、例えば、０．０５〜５ｍｍ、好ましくは０．５〜２ｍｍの範囲で設定することができる。
尚、本発明における硬度は、ゴムに対してはデュロメータ、ＤＬＣ膜に対してはヌープ硬度により測定するものである。 The hardness of the base material 2 can be appropriately set in consideration of the hardness of the DLC film 3, the hardness required for the buffer material 1, and the like. For example, the hardness is in the range of 5 to 90, preferably 30 to 70. Can be set. Moreover, the thickness in particular of the base material 2 is not restrict | limited, For example, it is 0.05-5 mm, Preferably it can set in the range of 0.5-2 mm.
The hardness in the present invention is measured by durometer for rubber and Knoop hardness for DLC film.

緩衝材１を構成するＤＬＣ膜３は、ダイヤモンド状炭素膜であり、適度の潤滑性を有し、かつ、耐磨耗性に優れ、また、厚みを調整することにより、基材２の柔軟性を損なうことなく適度の硬度をもった膜とすることができる。このようなＤＬＣ膜３は、プラズマＣＶＤ法、スパッタリング法、イオンプレーティング法等の真空成膜法により形成することができる。尚、本発明におけるＤＬＣ膜３とは、膜密度が１．６〜１．９ｇ／ｃｍ3の範囲にある炭素膜を意味する。 The DLC film 3 constituting the buffer material 1 is a diamond-like carbon film, has moderate lubricity, is excellent in wear resistance, and is flexible by adjusting the thickness. A film having an appropriate hardness can be obtained without impairing the film thickness. Such a DLC film 3 can be formed by a vacuum film forming method such as a plasma CVD method, a sputtering method, or an ion plating method. The DLC film 3 in the present invention means a carbon film having a film density in the range of 1.6 to 1.9 g / cm 3 .

例えば、プラズマＣＶＤ法によるＤＬＣ膜３の形成では、原料ガスとして、炭素膜形成に一般的に用いられるメタン、エタン、プロパン、ブタン、アセチレン、ベンゼン等の炭化水素化合物ガスを使用することができる。また、キャリアガスとして、水素ガス、アルゴンガス等を用いることができる。尚、前処理として、ＤＬＣ膜３を成膜する基材２の表面を、フッ素含有ガス、水素ガス、酸素ガス等の少なくとも１種からなるガスのプラズマに曝してもよい。このような前処理を施すことにより、基材２の表面の清浄化、適度の表面粗度形成を行なうことができる。また、例えば、フッ素含有ガスや水素ガスを用いて前処理を施すことにより、基材２の表面がフッ素終端化や水素終端化され、これにより、安定なフッ素−炭素結合、水素−炭素結合が可能となり、形成されるＤＬＣ膜３と基材２との密着性がより高いものとなる。   For example, in the formation of the DLC film 3 by the plasma CVD method, a hydrocarbon compound gas such as methane, ethane, propane, butane, acetylene, or benzene that is generally used for forming a carbon film can be used as a raw material gas. Moreover, hydrogen gas, argon gas, etc. can be used as carrier gas. As a pretreatment, the surface of the substrate 2 on which the DLC film 3 is formed may be exposed to plasma of a gas composed of at least one of fluorine-containing gas, hydrogen gas, oxygen gas and the like. By performing such pretreatment, the surface of the base material 2 can be cleaned and moderate surface roughness can be formed. Further, for example, by performing a pretreatment using a fluorine-containing gas or hydrogen gas, the surface of the substrate 2 is fluorine-terminated or hydrogen-terminated, whereby stable fluorine-carbon bonds and hydrogen-carbon bonds are formed. It becomes possible, and the adhesion between the formed DLC film 3 and the base material 2 becomes higher.

ＤＬＣ膜３の厚みは、使用する原料ガス、基材２の材質、硬度、および、緩衝材１に要求される硬度等を考慮して適宜設定することができるが、例えば、０．０１〜５μｍ、好ましくは０．５〜２μｍ範囲で設定することができる。
上述のように基材２上にＤＬＣ膜３を備えた本発明の緩衝材１は、保持体と被保持体との間に介在して吸引保持機能を発現できるものであればよく、ＤＬＣ膜３側における硬度は、例えば、５〜９０、好ましくは３０〜７０の範囲で設定することができる。 The thickness of the DLC film 3 can be appropriately set in consideration of the raw material gas to be used, the material and hardness of the base material 2, the hardness required for the buffer material 1, etc., for example, 0.01 to 5 μm. Preferably, it can be set in the range of 0.5 to 2 μm.
As described above, the cushioning material 1 of the present invention having the DLC film 3 on the base material 2 may be any material that can intervene between the holding body and the held body to express the suction holding function. The hardness on the 3 side can be set in the range of, for example, 5 to 90, preferably 30 to 70.

緩衝材１が備える吸引孔４は、その開口径、数、形成位置、開口形状に特に制限はなく、例えば、開口径を１〜５０ｍｍの範囲で設定することができる。図示例では、複数の吸引孔４が設けられているが、中央に１個の吸引孔を備えたリング形状の緩衝材であってもよい。また、図示例では、吸引孔４は、基材２上にＤＬＣ膜３を成膜した後に、打ち抜き等の手段により形成されたものであるが、予め吸引孔を形成した基材２にＤＬＣ膜３を成膜してもよい。   The suction hole 4 provided in the buffer material 1 is not particularly limited in its opening diameter, number, forming position, and opening shape, and for example, the opening diameter can be set in the range of 1 to 50 mm. In the illustrated example, a plurality of suction holes 4 are provided, but a ring-shaped cushioning material having one suction hole in the center may be used. Further, in the illustrated example, the suction hole 4 is formed by a means such as punching after the DLC film 3 is formed on the base material 2, but the DLC film is formed on the base material 2 in which the suction holes are formed in advance. 3 may be formed.

尚、上述のようなＤＬＣ膜は、本発明の吸引保持用の緩衝材の他に、例えば、Ｏ−リング、ダイヤフラムシール弁、アンブレラ（傘形の逆止弁）、ダイヤフラムのシール部、ベローズ等のゴム部材の所望の箇所に形成することにより、ゴム部材の機能、耐久性をより向上させることができる。   The DLC film as described above includes, for example, an O-ring, a diaphragm seal valve, an umbrella (an umbrella-shaped check valve), a diaphragm seal portion, a bellows, etc., in addition to the suction holding buffer material of the present invention. By forming the rubber member at a desired location, the function and durability of the rubber member can be further improved.

次に、実施例を挙げて本発明を更に詳細に説明する。
［実施例１］
シリコーンゴムからなる厚み１ｍｍ、直径２００ｍｍの円盤形状の基材を準備した。この基材に、開口径１２ｍｍの円形の吸引孔を、半径６０ｍｍの円周上に位置するように等間隔で１２個形成（打ち抜き法）した。 Next, the present invention will be described in more detail with reference to examples.
[Example 1]
A disk-shaped substrate made of silicone rubber and having a thickness of 1 mm and a diameter of 200 mm was prepared. Twelve circular suction holes having an opening diameter of 12 mm were formed on this substrate at equal intervals so as to be positioned on a circumference having a radius of 60 mm (punching method).

上記の基材をプラズマＣＶＤ装置の真空チャンバー内に載置し、一方の面を下記の前処理条件にて水素ガスプラズマに曝した。
（前処理条件）
・前処理ガス ： 水素ガス（導入量＝１００ｓｃｃｍ）
・高周波電力 ： １３．５６ＭＨｚ、３００Ｗ
・処理圧力 ： １３Ｐａ
・処理時間 ： ５分間 The substrate was placed in a vacuum chamber of a plasma CVD apparatus, and one surface was exposed to hydrogen gas plasma under the following pretreatment conditions.
(Pretreatment conditions)
・ Pretreatment gas: Hydrogen gas (introduction amount = 100 sccm)
・ High frequency power: 13.56 MHz, 300 W
・ Processing pressure: 13Pa
・ Processing time: 5 minutes

次いで、基材の前処理面に下記の条件でＤＬＣ膜を成膜して、本発明の緩衝材を得た。
（ＤＬＣ膜の成膜条件）
・原料ガス ： メタンガス（導入量＝１００ｓｃｃｍ）
・高周波電力 ： １３．５６ＭＨｚ、３００Ｗ
・成膜圧力 ： １３Ｐａ
・成膜速度 ： ２００Å／分
・成膜時間 ： ６０分 Next, a DLC film was formed on the pretreated surface of the substrate under the following conditions to obtain the buffer material of the present invention.
(DLC film formation conditions)
・ Raw material gas: Methane gas (introduction amount = 100 sccm)
・ High frequency power: 13.56 MHz, 300 W
・ Film pressure: 13Pa
・ Deposition rate: 200 liters / minute ・ Deposition time: 60 minutes

［実施例２］
前処理ガスとして水素ガスの代わりに６フッ化硫黄を用い、実施例１と同様の前処理条件にてフッ素化合物ガスプラズマに曝す前処理を行ない、その後、実施例１と同様の条件でＤＬＣ膜を成膜して、本発明の緩衝材を得た。 [Example 2]
A pretreatment is performed by using sulfur hexafluoride instead of hydrogen gas as a pretreatment gas and exposing to a fluorine compound gas plasma under the same pretreatment conditions as in the first embodiment, and then performing a DLC film under the same conditions as in the first embodiment. Was formed into a buffer material of the present invention.

［実施例３］
前処理ガスとして水素ガスの代わりに酸素ガスを用い、実施例１と同様の前処理条件にて酸素ガスプラズマに曝す第１の前処理を行ない、次いで、実施例１と同様の水素ガスプラズマに曝す第２の前処理を行ない、その後、実施例１と同様の条件でＤＬＣ膜を成膜して、本発明の緩衝材を得た。 [Example 3]
Using oxygen gas instead of hydrogen gas as a pretreatment gas, a first pretreatment is performed by exposing to oxygen gas plasma under the same pretreatment conditions as in Example 1, and then the hydrogen gas plasma as in Example 1 is used. A second pretreatment for exposure was performed, and then a DLC film was formed under the same conditions as in Example 1 to obtain the buffer material of the present invention.

［実施例４］
前処理を施さない他は、実施例１と同様の条件でＤＬＣ膜を成膜して、本発明の緩衝材を得た。 [Example 4]
A DLC film was formed under the same conditions as in Example 1 except that no pretreatment was performed to obtain the cushioning material of the present invention.

［評 価］
上述のように作製した４種の緩衝材（実施例１〜４）、およびＤＬＣ膜を形成していないシリコーンゴムからなる緩衝材（比較例）を定盤上に載置し、各緩衝材上にシリコンウエハ（直径１８０ｍｍ）を重ね、１ｇ／ｃｍ2の荷重を負荷した状態で室温にて１時間放置し、その後、荷重を解除し、シリコンウエハを緩衝材から引き離した。その際、本発明の４種の緩衝材（実施例１〜４）はいずれも容易にシリコンウエハを引き離すことができた。しかし、比較例の緩衝材はシリコンウエハとの貼り付きが生じた。 [Evaluation]
Four types of cushioning materials (Examples 1 to 4) produced as described above and a cushioning material (comparative example) made of silicone rubber not forming a DLC film are placed on a surface plate, and each cushioning material is placed on the cushioning material. A silicon wafer (180 mm in diameter) was stacked on the substrate and left standing at room temperature for 1 hour under a load of 1 g / cm 2 , after which the load was released and the silicon wafer was separated from the buffer material. At that time, the four kinds of cushioning materials (Examples 1 to 4) of the present invention could easily separate the silicon wafer. However, the buffer material of the comparative example was stuck to the silicon wafer.

種々の吸引保持における保持体と被保持体との間に介在させる緩衝材として利用することができる。   It can be used as a cushioning material interposed between the holding body and the held body in various suction holdings.

本発明の吸引保持用の緩衝材の一実施形態を示す平面図である。It is a top view which shows one Embodiment of the buffer material for suction holding | maintenance of this invention. 図１に示される緩衝材のＡ−Ａ線断面図である。FIG. 2 is a cross-sectional view of the cushioning material shown in FIG.

符号の説明Explanation of symbols

１…吸引保持用の緩衝材
２…基材
３…ＤＬＣ（Diamond Like Carbon）膜
４…吸引孔 DESCRIPTION OF SYMBOLS 1 ... Buffer material for suction holding 2 ... Base material 3 ... DLC (Diamond Like Carbon) film | membrane 4 ... Suction hole

Claims (5)

基材と、該基材の少なくとも一方の面に配設されたＤＬＣ（Diamond Like Carbon）膜とを備え、表裏貫通する吸引孔を有することを特徴とする吸引保持用の緩衝材。   A buffer material for suction holding, comprising a base material and a DLC (Diamond Like Carbon) film disposed on at least one surface of the base material, and having suction holes penetrating the front and back. 前記基材はゴム基材または樹脂基材であり、硬度は５〜９０の範囲であることを特徴とする請求項１に記載の吸引保持用の緩衝材。   The suction holding cushioning material according to claim 1, wherein the base material is a rubber base material or a resin base material, and has a hardness in a range of 5 to 90. 前記基材の厚みは０．０５〜５ｍｍの範囲であることを特徴とする請求項１または請求項２に記載の吸引保持用の緩衝材。   The cushioning material for suction and holding according to claim 1 or 2, wherein the thickness of the base material is in a range of 0.05 to 5 mm. 前記ＤＬＣ（Diamond Like Carbon）膜の膜密度は１．６〜１．９ｇ／ｃｍ3の範囲であることを特徴とする請求項１乃至請求項３のいずれかに記載の吸引保持用の緩衝材。 4. The suction holding buffer material according to claim 1, wherein a film density of the DLC (Diamond Like Carbon) film is in a range of 1.6 to 1.9 g / cm 3. . 前記ＤＬＣ（Diamond Like Carbon）膜側における硬度は１０００〜４０００の範囲であることを特徴とする請求項１乃至請求項４のいずれかに記載の吸引保持用の緩衝材。   The suction holding cushioning material according to any one of claims 1 to 4, wherein the hardness on the DLC (Diamond Like Carbon) film side is in a range of 1000 to 4000.
JP2004007619A 2004-01-15 2004-01-15 Buffer material for sucking and holding Pending JP2005199380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004007619A JP2005199380A (en) 2004-01-15 2004-01-15 Buffer material for sucking and holding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004007619A JP2005199380A (en) 2004-01-15 2004-01-15 Buffer material for sucking and holding

Publications (1)

Publication Number Publication Date
JP2005199380A true JP2005199380A (en) 2005-07-28

Family

ID=34821194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004007619A Pending JP2005199380A (en) 2004-01-15 2004-01-15 Buffer material for sucking and holding

Country Status (1)

Country Link
JP (1) JP2005199380A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034723A (en) * 2006-07-31 2008-02-14 Shin Etsu Polymer Co Ltd Contact component for semiconductor wafer
WO2016163137A1 (en) * 2015-04-09 2016-10-13 信越エンジニアリング株式会社 Apparatus for manufacturing lamination device
WO2020003961A1 (en) * 2018-06-25 2020-01-02 三菱電線工業株式会社 Silicone rubber molded body and production method for same
CN110948385A (en) * 2019-01-08 2020-04-03 天津华海清科机电科技有限公司 Elastic membrane for chemical mechanical polishing
JP7421894B2 (en) 2019-09-30 2024-01-25 富士紡ホールディングス株式会社 Resin sheet for adhering objects to the surface

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303744A (en) * 1989-05-16 1990-12-17 Nikko Rika Kk Vacuum chuck
JPH0414848A (en) * 1990-05-09 1992-01-20 Shibayama Kikai Kk Semiconductor wafer chuck for ic manufacturing process
JPH0661202A (en) * 1991-10-28 1994-03-04 Shin Etsu Chem Co Ltd Method of holding semiconductor wafer
JPH0945753A (en) * 1995-07-28 1997-02-14 Kyocera Corp Object supporting device
JPH10130428A (en) * 1996-10-25 1998-05-19 Fukoku Co Ltd Rubber composition and molded product thereof
JPH10139904A (en) * 1996-11-01 1998-05-26 Fukoku Co Ltd Rubber composition and molded article thereof
JPH10158815A (en) * 1996-11-29 1998-06-16 Nissin Electric Co Ltd Member for arranging material to be held for electrostatic chuck and its production as well as electrostatic chuck
JP2000096233A (en) * 1998-06-20 2000-04-04 Nissin Electric Co Ltd Carbon film and its formation, and carbon film coated article and its manufacture
JP2001083476A (en) * 1999-09-16 2001-03-30 Optrex Corp Substrate vacuum table device
JP2001214269A (en) * 2000-01-31 2001-08-07 Shinko Seiki Co Ltd Hard carbon laminated film and deposition method therefor
JP2001326271A (en) * 2000-05-16 2001-11-22 Nok Corp Spin chuck
JP2002322555A (en) * 2001-04-25 2002-11-08 Kobe Steel Ltd Diamond-like carbon multilayered film
JP2003053639A (en) * 2001-08-17 2003-02-26 Disco Abrasive Syst Ltd Holding tool and workpiece joining and detaching method to/from the same

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303744A (en) * 1989-05-16 1990-12-17 Nikko Rika Kk Vacuum chuck
JPH0414848A (en) * 1990-05-09 1992-01-20 Shibayama Kikai Kk Semiconductor wafer chuck for ic manufacturing process
JPH0661202A (en) * 1991-10-28 1994-03-04 Shin Etsu Chem Co Ltd Method of holding semiconductor wafer
JPH0945753A (en) * 1995-07-28 1997-02-14 Kyocera Corp Object supporting device
JPH10130428A (en) * 1996-10-25 1998-05-19 Fukoku Co Ltd Rubber composition and molded product thereof
JPH10139904A (en) * 1996-11-01 1998-05-26 Fukoku Co Ltd Rubber composition and molded article thereof
JPH10158815A (en) * 1996-11-29 1998-06-16 Nissin Electric Co Ltd Member for arranging material to be held for electrostatic chuck and its production as well as electrostatic chuck
JP2000096233A (en) * 1998-06-20 2000-04-04 Nissin Electric Co Ltd Carbon film and its formation, and carbon film coated article and its manufacture
JP2001083476A (en) * 1999-09-16 2001-03-30 Optrex Corp Substrate vacuum table device
JP2001214269A (en) * 2000-01-31 2001-08-07 Shinko Seiki Co Ltd Hard carbon laminated film and deposition method therefor
JP2001326271A (en) * 2000-05-16 2001-11-22 Nok Corp Spin chuck
JP2002322555A (en) * 2001-04-25 2002-11-08 Kobe Steel Ltd Diamond-like carbon multilayered film
JP2003053639A (en) * 2001-08-17 2003-02-26 Disco Abrasive Syst Ltd Holding tool and workpiece joining and detaching method to/from the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008034723A (en) * 2006-07-31 2008-02-14 Shin Etsu Polymer Co Ltd Contact component for semiconductor wafer
WO2016163137A1 (en) * 2015-04-09 2016-10-13 信越エンジニアリング株式会社 Apparatus for manufacturing lamination device
JPWO2016163137A1 (en) * 2015-04-09 2017-08-10 信越エンジニアリング株式会社 Bonding device manufacturing equipment
WO2020003961A1 (en) * 2018-06-25 2020-01-02 三菱電線工業株式会社 Silicone rubber molded body and production method for same
JP2020002183A (en) * 2018-06-25 2020-01-09 三菱電線工業株式会社 Silicone rubber molding and method for producing the same
CN112292420A (en) * 2018-06-25 2021-01-29 三菱电线工业株式会社 Silicone rubber molded body and method for producing same
JP7148919B2 (en) 2018-06-25 2022-10-06 三菱電線工業株式会社 Silicone rubber molding
CN112292420B (en) * 2018-06-25 2023-03-21 三菱电线工业株式会社 Silicone rubber molded body and method for producing same
CN110948385A (en) * 2019-01-08 2020-04-03 天津华海清科机电科技有限公司 Elastic membrane for chemical mechanical polishing
CN110948385B (en) * 2019-01-08 2020-08-14 华海清科股份有限公司 Elastic membrane for chemical mechanical polishing
JP7421894B2 (en) 2019-09-30 2024-01-25 富士紡ホールディングス株式会社 Resin sheet for adhering objects to the surface

Similar Documents

Publication Publication Date Title
US8388412B2 (en) Retaining ring with shaped profile
KR200464038Y1 (en) Gasket with positioning feature for clamped monolithic showerhead electrode
KR100833833B1 (en) Multilayer retaining ring for chemical mechanical polishing
US20050202758A1 (en) Carrier for holding an object to be polished
JP2005199380A (en) Buffer material for sucking and holding
EP2065131A1 (en) Method of manufacturing wafer carrier
KR20170137912A (en) Substrate holding member
CN103097081B (en) For holder and the grinding system of flexible grinding attachment
CN110129768A (en) A kind of carrier for metal-organic chemical vapor deposition equipment
JP2018006573A (en) Electrostatic chuck, manufacturing method thereof and reproduction method for electrostatic chuck
JP2015519012A5 (en)
JP2018014515A (en) Electrostatic chuck and manufacturing method therefor, and generation method for electrostatic chuck
JP2018531804A5 (en)
JP2008006526A (en) Polishing carrier
US20070004325A1 (en) Method for manufacturing diamond film
US20180142347A1 (en) Sliding film, method of producing same, sliding member, and method of producing same
JP5122386B2 (en) Case for semiconductor
JPH01100277A (en) Curved plate stuck with rigid carbonaceous film, manufacture and manufacturing device thereof
JP2020066797A (en) Protective film, container with protective film, manufacturing method thereof, and plasma cvd device
JP2009050943A (en) Retainer ring, carrier head and chemical mechanical polishing apparatus
JP7077331B2 (en) Substrate carrier structure
JPH11333773A (en) Sucking member of vacuum suction equipment, and its manufacture
WO2015006742A1 (en) Coated cmp retaining ring
JP2016011243A (en) Method for producing ceramic member, and supporting tool
JP2016074960A (en) Polishing support member

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091013

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091015

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100406

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100817