JPH01100277A - Curved plate stuck with rigid carbonaceous film, manufacture and manufacturing device thereof - Google Patents

Curved plate stuck with rigid carbonaceous film, manufacture and manufacturing device thereof

Info

Publication number
JPH01100277A
JPH01100277A JP62256607A JP25660787A JPH01100277A JP H01100277 A JPH01100277 A JP H01100277A JP 62256607 A JP62256607 A JP 62256607A JP 25660787 A JP25660787 A JP 25660787A JP H01100277 A JPH01100277 A JP H01100277A
Authority
JP
Japan
Prior art keywords
curved
substrate
curved surface
carbon film
hard carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62256607A
Other languages
Japanese (ja)
Inventor
Satoshi Katsumata
聡 勝又
Tomio Kazahaya
風早 富雄
Osamu Nakamura
中村 収
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Petrochemical Co Ltd
Original Assignee
Idemitsu Petrochemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Petrochemical Co Ltd filed Critical Idemitsu Petrochemical Co Ltd
Priority to JP62256607A priority Critical patent/JPH01100277A/en
Publication of JPH01100277A publication Critical patent/JPH01100277A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Abstract

PURPOSE:To obtain a curved plate stuck with a rigid carbonaceous film which is uniform and excellent in adhesion of the film by bringing plasma obtained by activating a gaseous raw material into contact with a base plate which is arranged between positive and negative electrodes having a curved surface correspondent to the curved surface of the base plate. CONSTITUTION:A base plate (curved plate) 2 is arranged to a negative electrode 11 having a curved surface correspondent to the curved surface of the base plate 2. A positive electrode 13 having the curved surface correspondent to this base plate 12 is arranged so as to keep equidistance for the negative electrode 11. Then plasma obtained by activating a gaseous raw material between both electrodes 11, 13 is brought into contact with the base plate 12. A uniform rigid carbonaceous film is formed on the surface of the base plate (curved plate) 12. This curved plate stuck with the rigid carbonaceous film is used for a diaphragm for a speaker, a radio cone and a parabolic antenna, etc.

Description

【発明の詳細な説明】 [産業上の利用分野J この発明は、ダイヤモンドもしくはダイヤモンド状炭素
またはその両者を含む均一な膜を湾曲板の表面に有する
硬質炭素膜付着湾曲板、その製造方法および硬質炭素膜
付着湾曲板の製造装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application J This invention relates to a curved plate having a uniform film containing diamond or diamond-like carbon or both on the surface of the curved plate with a hard carbon film attached thereto, a method for manufacturing the same, and The present invention relates to an apparatus for manufacturing a carbon film-attached curved plate.

[従来の技術いおよびその問題点] 近年、各方面において硬質炭素膜すなわちダイヤモンド
またはダイヤモンド状炭素(以下、ダイヤモンド状炭素
をDLCと略することがある。)の薄膜製造に関する研
究が盛んに行なわれ、その技術に関する報告量が確実に
増してきている。
[Prior art and its problems] In recent years, research has been actively conducted in various fields on the production of hard carbon films, that is, thin films of diamond or diamond-like carbon (hereinafter, diamond-like carbon may be abbreviated as DLC). , the amount of reports regarding this technology is steadily increasing.

一般に、高周波プラズマCVD装置でDLC薄膜を製造
するときには、高周波印加電極(以下、RF主電極いう
)側に基板を設置して、この上にダイヤモンドg膜を形
成させている。
Generally, when manufacturing a DLC thin film using a high frequency plasma CVD apparatus, a substrate is placed on the side of a high frequency application electrode (hereinafter referred to as RF main electrode), and a diamond G film is formed on the substrate.

この関係を模式的に示したのが、第2図であり、図中1
で示すのは高周波印加電極(負電極あるいはRF主電極
も称する。)、2で示すのは基板、3で示すのは対向電
極(アース電極)、Sで示すのはRF電源を示したもの
であって、この種の装置を通常は、並行平板型高周波プ
ラズマCvDと指称している。
Figure 2 schematically shows this relationship.
2 is the substrate, 3 is the counter electrode (earth electrode), and S is the RF power source. Therefore, this type of apparatus is usually referred to as parallel plate type high frequency plasma CvD.

そして、このようなCvD技術を利用してスピーカー用
振動板あるいはスピーカーコーンノ製造を行なう技術も
種々提案されている・たとえば、スピーカー用振動板に
おいて基体表面にダイヤモンド膜または非晶質炭素膜で
被覆する技術(特開昭59−143499号公報)や、
より端極的にダイヤモンド膜または非晶質炭素からなる
スピーカ用振動板としている技術(特開昭59−143
498号公報)、あるいは、ケイ素もしくはホウ素から
なる薄膜の上にDLC膜を形成させて得た音響振動板の
技術(特開昭59−161200号公報)などがある。
Various technologies have also been proposed for manufacturing speaker diaphragms or speaker cones using such CvD technology.For example, in speaker diaphragms, the substrate surface is coated with a diamond film or an amorphous carbon film. technology (Japanese Unexamined Patent Publication No. 59-143499),
A more extreme technique is the use of a speaker diaphragm made of a diamond film or amorphous carbon (Japanese Patent Laid-Open No. 59-143
498 (Japanese Unexamined Patent Publication No. 161200/1982), or a technology for an acoustic diaphragm obtained by forming a DLC film on a thin film made of silicon or boron (Japanese Patent Application Laid-Open No. 161200/1983).

しかしながら前二者の場合、実際にどのようなタイプの
CVD?を置を使用し、またどのような材質、形状の基
板を使用しているのかが必ずしも明らかではないが、そ
の説明が極く一般的であることから見て、いずれにして
も通常使用されている並行平板型のCVD装置によって
いるものと考えられる。
However, in the case of the first two, what type of CVD is actually used? It is not always clear what kind of material or shape the board is used for, but given that the explanation is extremely general, it is generally used in any case. This is thought to be caused by the parallel plate type CVD equipment.

また、後者の場合では、先ず、基板上にケイ素もしくは
ホウ素のS!gを形成させ、その上にDLC膜を形成さ
せたものについて記載しているが。
In the latter case, silicon or boron S! However, it is described that a DLC film is formed on the DLC film.

この場合も通常の並行平板型のCVD装置によっている
ものと考えられる。
In this case as well, it is considered that a normal parallel plate type CVD apparatus is used.

ところで 99用スピーカーに使用するための湾曲した
基体に対して、通常の並行平板、IcVD装置を用いて
ダイヤモンド薄膜ないしはDLC[あるいはその両者を
形成させる場面を考えると、第3図の矢印で示したよう
にプラズマガスが進行する。
By the way, considering the situation in which a diamond thin film or DLC [or both] is formed on a curved substrate for use in a 99 speaker using an ordinary parallel plate and IcVD device, the method indicated by the arrow in Fig. 3 The plasma gas advances as follows.

しかしながら、プラズマガス到達面の形状が凸状に湾曲
していることから、プラズマガスの単位投影面積当りの
到達密度に差が現われると共に、傾斜している面におい
て疎密の差が現われてダイヤモンド薄膜ないしはDLC
[あるいはその両者は、基体表面において第4図に示し
たような着膜が縞状に行なわれるという大きな欠点を有
している。すなわち、従来のスピーカー振動板において
は、基体表面にダイヤモンド膜または非晶質炭素膜が不
均一に付着しでいたのである。
However, since the shape of the plasma gas reaching surface is convexly curved, a difference appears in the reaching density per unit projected area of the plasma gas, and a difference in density appears on the inclined surface, resulting in a diamond thin film or DLC
[Alternatively, both methods have a major drawback in that the film is deposited in stripes on the surface of the substrate as shown in FIG. That is, in conventional speaker diaphragms, the diamond film or amorphous carbon film was non-uniformly adhered to the surface of the substrate.

このような状態を看過したままで音響用製品として使用
すると、その着膜の状態が一様でないことから一旦生成
した薄膜ではあるが、基板からの剥離が起り易くなった
り、薄膜の生成状iが均一でないことに起因して音響上
好ましくない傾向を示すようになる。
If this condition is ignored and used as an acoustic product, the thin film that has been formed may easily peel off from the substrate because the state of the film is not uniform. Due to the non-uniformity of the signal, it tends to exhibit an unfavorable acoustic tendency.

この発明は、上述のような問題点を解決するためになさ
れたもので、従来では均一な着膜が困難とされていた湾
曲状の基体表面に対して均一にダイヤモンド薄膜ないし
はDLClglあるいはその両者からなるn膜を湾曲板
の表面に均一にかつ緻密に形成してなる硬質炭素膜付着
湾曲板を提供し、前記硬質炭素膜付着湾曲板の製造方法
をおよびその製造装置を提供することを目的としている
ものである。
This invention was made in order to solve the above-mentioned problems, and it is possible to uniformly apply a diamond thin film or DLClgl, or both, to a curved substrate surface, where it has been difficult to uniformly deposit a film in the past. The purpose of the present invention is to provide a hard carbon film-attached curved plate formed by uniformly and densely forming a n film on the surface of the curved plate, and to provide a method for manufacturing the hard carbon film-attached curved plate and a manufacturing apparatus therefor. It is something that exists.

[問題点を解決するための手段J 以上に述べた目的を達成させるためのこの第1の発明の
構成は、湾曲板の表面に均一な厚みの硬質炭素膜を形成
してなることを特徴とする硬Jti炭素膜付着湾曲板で
あり、 第2の発明の構成は、湾曲した基板を、その基板の湾曲
面に対応した湾曲面を有する負電極に配置し、負電極の
湾曲面に対応した湾曲面を有する正電極を負電極の湾曲
面と等距離になるように凹凸相対向して配置した前記負
電極と前記正電極との間で原料ガスを活性化して得られ
たプラズマを、前記基板に、接触させることを特徴とす
る硬質炭素膜付着湾曲板の製造方法であり、第3の発明
の構成は、基板の湾曲状態に対応すると共に基板を配置
する湾曲面部を有する負電極と、この負電極の湾曲面に
対応して湾曲した湾曲面部を有する正電極とを、湾曲面
同士が凹凸相対向すると共に負電極の湾曲面と正電極の
湾曲面とが等距離を保持するようにして配置し、前記負
電極と正電極との間に原料ガスを供給する原料ガス導入
手段を設け、前記負電極とこれに相対向する前記正電極
との間で発生させたプラズマガスを前記負電極に配置し
た基板に接触可能としてなることを特徴とする硬質炭素
膜付着湾曲板の製造装置である。
[Means for Solving the Problems J] The structure of the first invention for achieving the above-mentioned object is characterized in that a hard carbon film of uniform thickness is formed on the surface of a curved plate. The structure of the second invention is a curved plate with a hard Jti carbon film attached thereto, in which a curved substrate is arranged on a negative electrode having a curved surface corresponding to the curved surface of the substrate, and a curved plate having a curved surface corresponding to the curved surface of the negative electrode is arranged. Plasma obtained by activating source gas between the negative electrode and the positive electrode, in which a positive electrode having a curved surface is disposed facing each other with unevenness so as to be equidistant from the curved surface of the negative electrode, is A method of manufacturing a curved plate with a hard carbon film attached thereto, characterized in that the curved plate is brought into contact with a substrate, and the configuration of the third invention includes: a negative electrode having a curved surface portion that corresponds to the curved state of the substrate and on which the substrate is placed; A positive electrode having a curved surface portion curved corresponding to the curved surface of the negative electrode is arranged such that the curved surfaces face each other with unevenness and the curved surface of the negative electrode and the curved surface of the positive electrode maintain an equal distance. A raw material gas introducing means for supplying raw material gas is provided between the negative electrode and the positive electrode, and a plasma gas generated between the negative electrode and the positive electrode opposite thereto is supplied to the negative electrode. This is an apparatus for manufacturing a curved plate having a hard carbon film attached thereto, which is characterized in that it is capable of contacting a substrate placed on an electrode.

この発明についてさらに詳述する。This invention will be explained in further detail.

この発明の原理は、湾曲した基板の表面に均−a−濃度
のプラズマを接触させることにより、湾曲した基板の表
面にダイヤモンドおよび/またはダイヤモンド状炭素(
以下、これを略して硬質炭素と称する。)Mを均一に形
成することであり、その原理的手法は、湾曲した基板の
その湾曲面に対応した湾曲面を有する負電極と、負電極
の湾曲面に応じた湾曲面を有する正電極とを相対向して
配置し、しかも、相対向する負電極の湾曲面と正電極の
湾曲面とが等距離を保持するようにし、この相対向する
両電極間で、原料ガスを活性して得られたプラズマを基
板の表面に接触させるようにしたことであり、その結果
として湾曲基板の表面に硬質炭素膜を均一に形成してな
る硬質炭素膜付着湾曲板が得られるのである。
The principle of this invention is that diamond and/or diamond-like carbon (
Hereinafter, this will be abbreviated as hard carbon. ) M is formed uniformly, and the principle method is to form a negative electrode having a curved surface corresponding to the curved surface of the curved substrate, and a positive electrode having a curved surface corresponding to the curved surface of the negative electrode. The curved surfaces of the negative electrode and the curved surface of the positive electrode that face each other are arranged to face each other, and the curved surface of the negative electrode and the curved surface of the positive electrode are kept at an equal distance, and between these two facing electrodes, the raw material gas is activated and obtained. The generated plasma is brought into contact with the surface of the substrate, and as a result, a hard carbon film-attached curved plate is obtained in which a hard carbon film is uniformly formed on the surface of the curved substrate.

基板の形状としては、任意であり、さまざまの形状であ
ってもよい、たとえば、基板の形状として、中空の球の
半分を切取ったような、あるいはその任意の部分を切取
ったような半球状、中空楕円体の長径方向あるいは短径
方向でその半分を切取ったような、あるいは任意の部分
で切取ったような半楕円球状、三角錐台形状および四角
錐台形状のようなn角錐台形状(nは整数)、筒状体の
中心線に平行な任意の面で筒状体を切取って得られる所
謂カマポコ形状、放物面を外周面とするパラボラ形状な
どを挙げることができる。なお、この発明における基板
は板状体であるから、基板は、凸に湾曲した外表面と前
記凸に対応する凹状に湾曲した内周面とを、通常、有し
ている。
The shape of the substrate is arbitrary and may be of various shapes, for example, the shape of the substrate may be a hemisphere, such as a hollow sphere with half cut out, or any part thereof cut out. shape, semi-ellipsoidal sphere shaped like a hollow ellipsoid with half cut off in the major axis direction or minor axis direction, or an arbitrary part cut off, an n-sided pyramid such as a truncated triangular pyramid shape and a truncated quadrangular pyramid shape. Examples include a trapezoidal shape (n is an integer), a so-called cylindrical shape obtained by cutting a cylindrical body at an arbitrary plane parallel to the center line of the cylindrical body, and a parabolic shape whose outer peripheral surface is a paraboloid. . Note that since the substrate in the present invention is a plate-shaped body, the substrate usually has a convexly curved outer surface and a concavely curved inner peripheral surface corresponding to the convexity.

どのような形状の基板を使用するかは、硬質炭素膜を形
成した基板の用途により、決定される。
The shape of the substrate to be used is determined depending on the use of the substrate on which the hard carbon film is formed.

この発明では、半球状の基板を使用する場合が多い、半
球状の基板の凸状表面にダイヤモンド膜を形成すると、
これをスピーカーコーンとすることができるからである
。また、パラボラアンテナとするためであれば、パラボ
ラ形状の基板を採用するのが良い。
In this invention, when a diamond film is formed on the convex surface of a hemispherical substrate, which is often used,
This is because this can be used as a speaker cone. Furthermore, if the antenna is to be used as a parabolic antenna, it is preferable to use a parabolic shaped substrate.

基板の材質としては、プラズマの接触に十分に耐える耐
熱性を有していれば、特に制限がなく、たとえば、アル
ミニウム、チタン、タングステン、モリブデン、コバル
ト、クロムなどの金属、シリコンなどの半金属、前記金
属および半金属の酸化物、窒化物および炭化物、前記金
属の合金、A1703−Fe系、TiC−Ni系、Ti
C−Co系、Ti C−Ti N系、B4C−Fe系等
のサーメット、さらには各種のガラスやセラミックなど
を挙げることができる。また、場合により耐熱性の合成
樹脂も使用することができる。
There are no particular restrictions on the material of the substrate as long as it has sufficient heat resistance to withstand contact with plasma; for example, metals such as aluminum, titanium, tungsten, molybdenum, cobalt, and chromium, semimetals such as silicon, Oxides, nitrides and carbides of the metals and metalloids, alloys of the metals, A1703-Fe series, TiC-Ni series, Ti
Examples include cermets such as C-Co, TiC-TiN, and B4C-Fe, as well as various glasses and ceramics. In addition, heat-resistant synthetic resins may also be used depending on the case.

この発明の方法に従って、あるいはこの発明の装置によ
り基板の表面に硬質炭素膜を形成し、その基板を音響用
スピーカーの振動板とするのであれば、音響特性に優れ
ると言う点で、基板の材質をチタン、アルミニウム、ア
ルミナ、炭化チタン等とするのが好ましい。
If a hard carbon film is formed on the surface of a substrate according to the method of this invention or by the apparatus of this invention, and the substrate is used as a diaphragm for an acoustic speaker, the material of the substrate has excellent acoustic characteristics. It is preferable to use titanium, aluminum, alumina, titanium carbide, or the like.

なお、基板表面への硬質炭素膜の密着性の向上を図るた
めに、硬質炭素膜を形成しようとする基板の表面に、予
めケイ素、炭化ケイ素、炭化チタン等からなる中間膜を
@ 1000 A〜3JLmの厚みで形成しても良い。
In addition, in order to improve the adhesion of the hard carbon film to the substrate surface, an intermediate film made of silicon, silicon carbide, titanium carbide, etc. is preliminarily applied to the surface of the substrate on which the hard carbon film is to be formed. It may be formed with a thickness of 3JLm.

次に、この発明では、基板の形状が決定されると、負電
極および正電極の形状を決定することができる。と言う
のは、負電極は、基板を載置する必要があり、負電極と
正電極とは、その相対向面が等距離でなければならない
からである。
Next, in this invention, once the shape of the substrate is determined, the shapes of the negative electrode and the positive electrode can be determined. This is because the substrate must be placed on the negative electrode, and the opposing surfaces of the negative and positive electrodes must be equidistant from each other.

したがって、基板の形状が、たとえば半球状であり、そ
の凸状外表面に硬質炭素膜を形成するのであれば、負電
極もまた半球状の凸状湾曲面である凸状湾曲面部を有す
る。そして、この半球状の凸状消極面部が、半球状基板
をa置する部位となる。
Therefore, if the substrate has a hemispherical shape and a hard carbon film is formed on its convex outer surface, the negative electrode also has a convex curved surface portion that is a hemispherical convex curved surface. Then, this hemispherical convex negative polarization surface portion becomes a portion where the hemispherical substrate is placed a.

基板の形状がパラボラ形状であり、凹状であるその放物
面内周に硬質炭素膜を形成するのであれば、負電極もま
た。凹状の放物外周面を有する凹状湾曲面を有する。
If the substrate has a parabolic shape and a hard carbon film is formed on the inner periphery of the concave paraboloid, the negative electrode will also be the same. It has a concave curved surface with a concave parabolic outer peripheral surface.

同様に、基板の形状が他のさまざまの形状を有していて
、その外表面に硬質炭素膜を形成するのであれば、負電
極の基板の外表面と同じ外表面を有する凸状あるいは凹
状の湾曲面を有するのである。なお、基板の湾曲形状(
正確に言うと、基板の負電極に向う面の湾曲形状)と負
電極の湾曲形状とは実質的に対応していれば十分であり
、寸分違わず厳密に一致している必要はない。
Similarly, if the substrate has various other shapes and a hard carbon film is to be formed on its outer surface, a convex or concave shape having the same outer surface as that of the negative electrode substrate may be used. It has a curved surface. Note that the curved shape of the board (
To be precise, it is sufficient that the curved shape of the surface of the substrate facing the negative electrode substantially corresponds to the curved shape of the negative electrode, and it is not necessary that they exactly match without any difference.

一方、正電極の形状は、前記負電極の形状に対し、凹凸
が逆の関係となる。
On the other hand, the shape of the positive electrode has an inverse relationship between the unevenness and the shape of the negative electrode.

すなわち、負電極が、たとえば半球凸状の湾曲形状であ
れば、正電極は半球凹状の湾曲形状である。負電極が放
物内周面を有する凹状の湾曲形状であれば、正電極は、
放物外周面を有する凸状の湾曲形状を有する。負電極が
他の形状の湾曲面であっても、正電極凹状湾曲面は負電
極の湾曲面に応じた形状を有するのである。
That is, if the negative electrode has a curved shape with a convex hemisphere, for example, the positive electrode has a curved shape with a concave hemisphere. If the negative electrode has a concave curved shape with a parabolic inner circumferential surface, the positive electrode has a
It has a convex curved shape with a parabolic outer peripheral surface. Even if the negative electrode has a curved surface of another shape, the positive electrode concave curved surface has a shape corresponding to the curved surface of the negative electrode.

負電極の湾曲面と正電極の湾曲面とが凹凸相対応する形
状となっているので、この負電極と正電極との間に生じ
る電界が、負電極の湾曲面に対して垂直方向に生じる。
Since the curved surface of the negative electrode and the curved surface of the positive electrode have corrugated shapes that correspond to each other, an electric field is generated between the negative electrode and the positive electrode in a direction perpendicular to the curved surface of the negative electrode. .

なお、この発明においては、前記正電極および負電極に
バイアス電圧を印加することがある。その場合、電位の
高い電極が正電極である。
In addition, in this invention, a bias voltage may be applied to the positive electrode and the negative electrode. In that case, the electrode with the higher potential is the positive electrode.

この発明に係る装置では、前記負電極と正電極との間に
、原料ガスを供給する原料ガス導入手段を備える。
The apparatus according to the present invention includes source gas introducing means for supplying source gas between the negative electrode and the positive electrode.

原料ガス導入手段は、前記負電極と正電極との間に原料
ガスを導入することができればどのような構造、型式で
あっても良いのであるが、両電極間に均一なプラズマを
発生させるのであれば、第1図に示すように、正電極1
3における負電極11に相対向する湾曲面に、−様に開
設した複数のガス噴出口14を設け、このガス噴出口1
4から円電極11.13間に原料ガスを噴出させるよう
にするのが良い。
The raw material gas introducing means may have any structure or type as long as it can introduce the raw material gas between the negative electrode and the positive electrode, but it should be used so that uniform plasma is generated between the two electrodes. If there is, as shown in Figure 1, the positive electrode 1
A plurality of gas ejection ports 14 opened in a −-shape are provided on the curved surface facing the negative electrode 11 in 3, and the gas ejection ports 1
It is preferable to eject the raw material gas between the circular electrodes 11 and 13.

第1図においては、原料ガスは、正電極13である湾曲
面の裏側の空洞部!7にガス導入パイプ1日から導入さ
れ、次いで、前記ガス噴出口!4から噴出する。
In FIG. 1, the raw material gas is in the cavity on the back side of the curved surface which is the positive electrode 13! 7, the gas introduction pipe is introduced from the 1st, and then the gas outlet! It erupts from 4.

原料ガスとしては、たとえば、メタン、エタン、プロパ
ン、ブタン、ペンタン、ヘキサンなどのアルカン類炭化
水素、エチレン、プロピレン、ブテン、ペンテン、ブタ
ジェンなどのアルケン類炭化水素、アセチレンで代表さ
れるアルキン類炭化水素、ベンゼン、トルエン、キシレ
ン、インデン、ナフタリン、フェナントレンなどの芳香
族炭化水素類、シクロプロパン、シクロヘキサンなどの
シクロパラフィン類、シクロペンテン、シクロヘキセン
などのシクロオレフィンなどを挙げることができる。さ
らには、原料ガスとして、前記各種の化合物のハロゲン
化物も使用することができる。
Examples of raw material gases include alkane hydrocarbons such as methane, ethane, propane, butane, pentane, and hexane, alkenes hydrocarbons such as ethylene, propylene, butene, pentene, and butadiene, and alkynes hydrocarbons such as acetylene. , aromatic hydrocarbons such as benzene, toluene, xylene, indene, naphthalene, and phenanthrene; cycloparaffins such as cyclopropane and cyclohexane; and cycloolefins such as cyclopentene and cyclohexene. Furthermore, halides of the various compounds mentioned above can also be used as the raw material gas.

また、その他に、−酸化炭素、二酸化炭素、メチルアル
コール、エチルアルコールなどの含酸素炭素化合物、メ
チルアミン、エチルアミン、アニリンなどの含窒素炭素
化合物なども使用することができる。
In addition, oxygen-containing carbon compounds such as carbon oxide, carbon dioxide, methyl alcohol, and ethyl alcohol, and nitrogen-containing carbon compounds such as methylamine, ethylamine, and aniline can also be used.

さらに単体ではないが、ガソリン、ケロシン、テレピン
油、松根油、重油、ギヤー油、シリンダ油なとも有効に
使用することができる。
Although not used alone, it can also be effectively used with gasoline, kerosene, turpentine oil, pine oil, heavy oil, gear oil, and cylinder oil.

なお、この炭素源は、前述の群から選ばれた1種でもよ
いが、必要に応じて2種以上を適当に組合わせて使用す
ることも可能である。
Note that this carbon source may be one selected from the above-mentioned group, but it is also possible to use a suitable combination of two or more types as required.

原料ガスは、そのまま前記原料導入手段によって1両電
極間に供給されるが、キャリヤーガスを用いて導入して
も良い。
The raw material gas is directly supplied between the two electrodes by the raw material introducing means, but it may also be introduced using a carrier gas.

前記キャリヤーガスとしては、両電極間でプラズマを安
定に発生させ、これを長時間持続させることができれば
特に制限がなく、たとえば、水素ガス、ヘリウムガス、
ネオンガス、アルゴンガス、クリプトンガス、キセノン
ガス、窒素ガスなどを使用することができる。
The carrier gas is not particularly limited as long as it can stably generate plasma between the two electrodes and maintain it for a long time; for example, hydrogen gas, helium gas,
Neon gas, argon gas, krypton gas, xenon gas, nitrogen gas, etc. can be used.

キャリヤーガスは、前述の中から選択した1種または2
種以上を組合わせて使用することができる。
The carrier gas is one or two selected from the above.
More than one species can be used in combination.

原料ガスの活性は、たとえば、直流電圧を電極間に印加
する方法、高周波を電極間に印加する方法、マイクロ波
を電極間に印加する方法等の従来から公知の方法を採用
することができる。これらの中でも、高周波を電極間に
印加する活性化方法が好ましい。
The activity of the raw material gas can be determined by conventionally known methods, such as applying a DC voltage between electrodes, applying high frequency between electrodes, or applying microwaves between electrodes. Among these, an activation method in which high frequency is applied between the electrodes is preferred.

原料ガスの活性の一例につき、第1図を参照すると、減
圧にした反応室15内を排気し、湾曲した負電極11と
この負電極11の湾曲面に凹凸相対向して配置した正電
極13との間に原料ガスをガス噴出口14から噴出させ
る。負電極には高周波を印加し、正電極は接地しておく
、また、基板12は所定温度に加熱しておく。
For an example of the activity of the raw material gas, referring to FIG. 1, the inside of the reaction chamber 15 which has been reduced in pressure is evacuated, and a curved negative electrode 11 and a positive electrode 13 arranged opposite to each other with unevenness on the curved surface of the negative electrode 11 are formed. The raw material gas is ejected from the gas ejection port 14 between the two. A high frequency is applied to the negative electrode, the positive electrode is grounded, and the substrate 12 is heated to a predetermined temperature.

このような状態下に、原料ガスは、正負電極間のプラズ
マ放電により、プラズマとなる。
Under such conditions, the raw material gas becomes plasma due to plasma discharge between the positive and negative electrodes.

生成したプラズマは、負電極11の湾曲面に載置した基
板12と接触して、基板12の表面に硬質炭素膜が形成
される。
The generated plasma comes into contact with the substrate 12 placed on the curved surface of the negative electrode 11, and a hard carbon film is formed on the surface of the substrate 12.

原料ガスをたとえばプラズマCVD法により活性化する
反応条件として、圧力は、 10−8〜103 Tor
r 、好ましくは10−4〜102 Torrである。
As a reaction condition for activating the raw material gas by, for example, plasma CVD method, the pressure is 10-8 to 103 Torr.
r, preferably 10-4 to 102 Torr.

この圧力が、 10−8Tartよりも低い場合には、
硬質炭素膜の生成速度が著しく低下することがあり、ま
た一方103 Tartよりも高い圧力を使用したとき
には、硬質炭素膜が形成されないことがある。
If this pressure is lower than 10-8 Tart,
The rate of formation of the hard carbon film may be significantly reduced, while when pressures higher than 103 Tart are used, no hard carbon film may be formed.

また、反応温度は、室温〜1000℃、好ましくは室温
〜900℃程度とする。
Further, the reaction temperature is from room temperature to 1000°C, preferably from room temperature to about 900°C.

この温度が室温よりも低い場合には、硬Jt1炭素膜の
生長速度が著しく遅くなることがあり、−方、  10
00℃を超える温度を使用しても、そのエネルギー付ケ
に見あった効果は得られなくなる。
If this temperature is lower than room temperature, the growth rate of the hard Jt1 carbon film may slow down significantly;
Even if a temperature exceeding 00° C. is used, the effect commensurate with the amount of energy used will no longer be obtained.

この発明においては、条件の設定如何により。In this invention, it depends on how the conditions are set.

基板の表面に、硬質炭素膜として、ダイヤモンド膜、ダ
イヤモンド状炭素膜、あるいはダイヤモンドとダイヤモ
ンド状炭素などの混在した膜が均一に形成される。
A diamond film, a diamond-like carbon film, or a mixed film of diamond and diamond-like carbon is uniformly formed on the surface of the substrate as a hard carbon film.

基板の表面に形成する硬質炭素膜の厚さは、硬質炭素膜
を有する基板の用途により一部に規定することができな
いが、この硬質炭素膜付き基板を音響用スピーカー振動
板とするのであれば、硬質炭素膜の厚さを1,090 
A以上、望ましくは3,000A〜304mとすること
が望ましい、 1.00OA以上の厚さの硬質炭素膜に
すると、音響特性が良好となるからである。
The thickness of the hard carbon film formed on the surface of the substrate cannot be specified depending on the intended use of the board with the hard carbon film, but if the board with the hard carbon film is used as an acoustic speaker diaphragm, , the thickness of the hard carbon film is 1,090
It is desirable that the hard carbon film has a thickness of A or more, preferably 3,000A to 304m.This is because a hard carbon film with a thickness of 1.00OA or more has good acoustic characteristics.

[実施例J 以下、具体的に実施例および比較例を示して、この発明
の構成および効果をさらに詳細に説明する。
[Example J Hereinafter, the structure and effects of the present invention will be explained in more detail by specifically showing Examples and Comparative Examples.

(実施例1) 第1図に示したような、直径45 amφの負電極11
の上に、凸状湾曲面に100OAの厚さのケイ素膜をコ
ーティングしてなるチタン製基板12(凸状部分の直径
251111φ、高さが10 IIm、基板の厚さ35
4m)であるスピーカーコーンを、セットした。
(Example 1) A negative electrode 11 with a diameter of 45 amφ as shown in FIG.
A titanium substrate 12 (diameter of the convex portion 251111φ, height 10 IIm, thickness of the substrate 35
A speaker cone of 4 m) was set.

一方、負電極の凸状湾曲面から10mmの距離を隔てて
凹状に湾曲する正電極を、負電極に対して凹凸相対向し
て、セットし、以下の条件で硬質炭素膜を形成した。
On the other hand, a concavely curved positive electrode was set at a distance of 10 mm from the convexly curved surface of the negative electrode so as to face the concave and convex surface of the negative electrode, and a hard carbon film was formed under the following conditions.

合成法 :RFプラズマCVD法 13.56にHz、内部電極 反応ガス:純メタン、流量205OONRF出カニ s
oo w 圧力  : 0.I Torr d    :10■層 直流バイアス:400V 基板温度=100℃ スピーカーコーン上で形成されていた硬質炭素膜は、厚
さが5,000 pmでその密着性は良好であって膜の
閉離は認められず、しかも基板の表面に硬質炭1!:膜
が均一に形成されていた。なお、このときの硬質炭素膜
の形成速度は、70〜100A/分であった。
Synthesis method: RF plasma CVD method 13.56 Hz, internal electrode reaction gas: pure methane, flow rate 205 OON RF output crab s
oo w Pressure: 0. I Torr d: 10 ■ layer DC bias: 400V Substrate temperature = 100°C The hard carbon film formed on the speaker cone has a thickness of 5,000 pm and its adhesion is good, and the film does not close. Not recognized, and there is 1 hard carbon on the surface of the board! : The film was formed uniformly. In addition, the formation rate of the hard carbon film at this time was 70 to 100 A/min.

これとは別に前記と同一の条件でシリコーン基板の上に
形成した硬質炭素膜のヌープ硬度は2.420 kg/
mm2であり、ラマンスペクトル分析を行なったところ
、この硬質炭素膜のラマンスペクトルは周知のDLCl
giのものと一致した。
Separately, the Knoop hardness of a hard carbon film formed on a silicone substrate under the same conditions as above was 2.420 kg/
mm2, and when Raman spectrum analysis was performed, the Raman spectrum of this hard carbon film was similar to that of the well-known DLCl.
It matched that of gi.

(比較例) 実施例において、互いに平行に配置した平板状の電極と
を使用した以外は、すべて同一の条件で前記実施例と同
様にして硬質炭素膜の形成を試みた。
(Comparative Example) In the example, formation of a hard carbon film was attempted in the same manner as in the previous example under all the same conditions except that flat electrodes arranged parallel to each other were used.

その結果、基板の凸状湾曲面の表面には、第4図に示し
たように明らかに縞状になっている硬質炭素膜の形成が
認められた。また、この硬質炭素膜の一部には剥離が認
められ、粉状になった。
As a result, on the convex curved surface of the substrate, formation of a hard carbon film clearly in the form of stripes as shown in FIG. 4 was observed. Moreover, peeling was observed in a part of this hard carbon film, and it became powder-like.

[発明の効果] この発明によると、 ■ 湾曲基板の表面に均一に硬質炭素膜を形成してな菖
ので、膜の密着性に優れた硬質炭素膜付湾曲基板を提供
することができ、さらに、この硬質炭素膜付湾曲基板を
たとえば音響機材例えばスピーカー用振動板やスピーカ
ーコーンに使用すると優れた音響特性が発揮され、また
パラボラアンテナのような通信機材に使用すると優れた
耐候性および耐蝕性が発揮され、 ■ 均一性の高い硬質炭素膜のコーティングを行なうこ
とが可能である、 ■ 薄膜が均一であるから剥離が起こらない、[株] 
高硬度のコーティングを可能とした、■ 基板の湾曲面
に対応した湾曲面を有する電極に基板を配置しているの
で、基板と電極との接触が密になることから、熱伝導性
が良好になり、基板温度を十分に上昇させることができ
ると共に基板の温度の制御を容易なものとすることがで
きる、 という硬質炭X膜付着湾曲板の製造方法およびその製造
装置を提供することができる。
[Effects of the Invention] According to the present invention, ■ Since the hard carbon film is uniformly formed on the surface of the curved substrate, it is possible to provide a curved substrate with a hard carbon film having excellent film adhesion; When this curved substrate with a hard carbon film is used in audio equipment such as speaker diaphragms and speaker cones, it exhibits excellent acoustic properties, and when used in communication equipment such as parabolic antennas, it exhibits excellent weather resistance and corrosion resistance. ■ It is possible to coat a hard carbon film with high uniformity. ■ The thin film is uniform so no peeling occurs. [Co., Ltd.]
■ The substrate is placed on an electrode that has a curved surface that corresponds to the curved surface of the substrate, which allows for high-hardness coating, resulting in close contact between the substrate and the electrode, resulting in good thermal conductivity. Thus, it is possible to provide a method for manufacturing a curved board with a hard carbon X film attached thereto, and an apparatus for manufacturing the same, in which the substrate temperature can be sufficiently raised and the temperature of the substrate can be easily controlled.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明に従って構成したCVD装置の概念図
、第2図はプラズマCVD装置の基本概念図、第3図は
従来の装置を示した概念図、第4図は第3図の装置を使
用してスピーカーコーン上に硬質炭素膜を形成させた状
態を示した正面図である。 l:負電極、2:基板、3:正電極、11:正電極、1
2:基板、13:正電極、14=ガス供給口。 特許出願人   出光石油化学株式会社代理人    
 弁理士 福相 直樹  ′4第1図 第2図 第3図 手続補正書 昭和62年lO月15日
Fig. 1 is a conceptual diagram of a CVD apparatus constructed according to the present invention, Fig. 2 is a basic conceptual diagram of a plasma CVD apparatus, Fig. 3 is a conceptual diagram of a conventional apparatus, and Fig. 4 is a conceptual diagram of the apparatus of Fig. 3. FIG. 3 is a front view showing a state in which a hard carbon film is formed on a speaker cone using the speaker cone. l: negative electrode, 2: substrate, 3: positive electrode, 11: positive electrode, 1
2: Substrate, 13: Positive electrode, 14 = Gas supply port. Patent applicant: Idemitsu Petrochemical Co., Ltd. Agent
Patent Attorney Naoki Fukuso '4 Figure 1 Figure 2 Figure 3 Procedural Amendments dated 15th October 1986

Claims (1)

【特許請求の範囲】 (1)湾曲板の表面に均一な厚みの硬質炭素膜を形成し
てなることを特徴とする硬質炭素膜付着湾曲板。 (2)前記硬質炭素膜付着湾曲板がスピーカー用振動板
である前記特許請求の範囲第1項に記載の硬質炭素膜付
着湾曲板。 (3)前記硬質炭素膜付着湾曲板がスピーカーコーンで
ある前記特許請求の範囲第1項に記載の硬質炭素膜付着
湾曲板。 (4)前記硬質炭素膜付着湾曲板がパラボラアンテナで
ある前記特許請求の範囲第1項に記載の硬質炭素膜付着
湾曲板である前記特許請求の範囲第1項に記載の硬質炭
素膜付着湾曲板。 (5)湾曲した基板を、その基板の湾曲面に対応した湾
曲面を有する負電極に配置し、負電極の湾曲面に対応し
た湾曲面を有する正電極を負電極の湾曲面と等距離にな
るように凹凸相対向して配置した前記負電極と前記正電
極との間で原料ガスを活性化して得られたプラズマを、
前記基板に、接触させることを特徴とする硬質炭素膜付
着湾曲板の製造方法。(6)前記基板は凸面板であり、
前記負電極は、前記凸面板である基板を載置する凸状湾
曲面部を有してなり、前記正電極は、前記凸状湾曲面部
に応じた凹状湾曲面部を有してなる前記特許請求の範囲
第5項に記載の硬質炭素膜付着湾曲板の製造方法。 (7)前記基板は半球状凸面板であり、前記負電極は、
半球状凸面板である基板を載置する凸状湾曲面部を有し
てなり、前記正電極は、前記円形凸状湾曲面部に応じた
凹状湾曲面部を有してなる前記特許請求の範囲第5項ま
たは第6項に記載の硬質炭素膜付着湾曲板の製造方法。 (8)前記基板がチタンである前記特許請求の範囲第5
項〜第7項までのいずれかに記載の硬質炭素膜付着湾曲
板の製造方法。 (9)前記基板が、その表面にシリコン、炭化ケイ素ま
たは炭化チタンをコーティングしてなる前記特許請求の
範囲第5項〜第8項のいずれかに記載の硬質炭素膜付着
湾曲板の製造方法。 (10)基板の湾曲状態に対応すると共に基板を載置す
る湾曲面部を有する負電極と、この負電極の湾曲面に対
応して湾曲した湾曲面部を有する正電極とを、湾曲面同
士が凹凸相対向すると共に負電極の湾曲面と正電極の湾
曲面とが等距離を保持するようにして配置し、前記負電
極と正電極との間に原料ガスを供給する原料ガス導入手
段を設け、前記負電極とこれに相対向する前記正電極と
の間で発生させたプラズマガスを前記負電極に配置した
基板に接触可能としてなることを特徴とする硬質炭素膜
付着湾曲板の製造装置。 (11)前記基板は凸面板であり、前記負電極は、前記
凸面板である基板を載置する凸状湾曲面部を有してなり
、前記正電極は、前記凸状湾曲面部に応じた凹状湾曲面
部を有してなる前記特許請求の範囲第10項に記載の硬
質炭素膜付着湾曲板の製造装置。 (12)前記基板は、円形凸面板であり、前記負電極は
、円形凸面板である基板を載置する円形凸状湾曲面部を
有してなり、前記正電極は、前記円形凸状湾曲面部に応
じた凹状湾曲面部を有してなる前記特許請求の範囲第1
0項または第11項に記載の硬質炭素膜付着湾曲板の製
造装置。 (13)前記原料ガス導入手段は、前記正電極の湾曲面
部に開設したガス噴出口を備えてなる前記特許請求の範
囲第10項〜第12項のいずれかに記載の硬質炭素膜付
着湾曲板の製造装置。
[Scope of Claims] (1) A hard carbon film-attached curved plate, characterized in that a hard carbon film of uniform thickness is formed on the surface of the curved plate. (2) The hard carbon film-attached curved plate according to claim 1, wherein the hard carbon film-attached curved plate is a diaphragm for a speaker. (3) The hard carbon film-attached curved plate according to claim 1, wherein the hard carbon film-attached curved plate is a speaker cone. (4) The hard carbon film attached curved plate according to claim 1, wherein the hard carbon film attached curved plate is a parabolic antenna. Board. (5) A curved substrate is placed on a negative electrode having a curved surface corresponding to the curved surface of the substrate, and a positive electrode having a curved surface corresponding to the curved surface of the negative electrode is placed equidistant from the curved surface of the negative electrode. The plasma obtained by activating the raw material gas between the negative electrode and the positive electrode, which are arranged facing each other with the unevenness,
A method for manufacturing a curved plate with a hard carbon film attached thereto, the method comprising bringing the board into contact with the substrate. (6) the substrate is a convex plate;
The negative electrode has a convex curved surface portion on which the substrate, which is the convex plate, is placed, and the positive electrode has a concave curved surface portion corresponding to the convex curved surface portion. A method for manufacturing a hard carbon film-attached curved plate according to Scope 5. (7) The substrate is a hemispherical convex plate, and the negative electrode is
Claim 5, wherein the positive electrode has a convex curved surface portion on which a substrate, which is a hemispherical convex plate, is placed, and the positive electrode has a concave curved surface portion corresponding to the circular convex curved surface portion. The method for manufacturing a hard carbon film-attached curved plate according to item 1 or 6. (8) Claim 5, wherein the substrate is titanium.
A method for manufacturing a hard carbon film-attached curved plate according to any one of items 1 to 7. (9) The method for manufacturing a curved plate with a hard carbon film attached thereto according to any one of claims 5 to 8, wherein the substrate is coated with silicon, silicon carbide, or titanium carbide on its surface. (10) A negative electrode having a curved surface portion corresponding to the curved state of the substrate and on which the substrate is placed, and a positive electrode having a curved surface portion curved corresponding to the curved surface of the negative electrode, the curved surfaces of which are uneven. Providing a raw material gas introduction means for supplying raw material gas between the negative electrode and the positive electrode, which are arranged so that the curved surfaces of the negative electrode and the curved surface of the positive electrode face each other and maintain an equal distance; A manufacturing apparatus for a hard carbon film-attached curved plate, characterized in that a plasma gas generated between the negative electrode and the positive electrode facing the negative electrode can come into contact with a substrate placed on the negative electrode. (11) The substrate is a convex plate, the negative electrode has a convex curved surface portion on which the convex substrate is placed, and the positive electrode has a concave shape corresponding to the convex curved surface portion. An apparatus for manufacturing a hard carbon film-attached curved plate according to claim 10, which has a curved surface portion. (12) The substrate is a circular convex plate, the negative electrode has a circular convex curved surface portion on which the substrate, which is a circular convex plate, is placed, and the positive electrode is arranged on the circular convex curved surface portion. Claim 1 having a concave curved surface portion corresponding to
An apparatus for manufacturing a hard carbon film-attached curved plate according to item 0 or 11. (13) The hard carbon film-attached curved plate according to any one of claims 10 to 12, wherein the raw material gas introducing means is provided with a gas jet port opened in a curved surface portion of the positive electrode. manufacturing equipment.
JP62256607A 1987-10-12 1987-10-12 Curved plate stuck with rigid carbonaceous film, manufacture and manufacturing device thereof Pending JPH01100277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62256607A JPH01100277A (en) 1987-10-12 1987-10-12 Curved plate stuck with rigid carbonaceous film, manufacture and manufacturing device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62256607A JPH01100277A (en) 1987-10-12 1987-10-12 Curved plate stuck with rigid carbonaceous film, manufacture and manufacturing device thereof

Publications (1)

Publication Number Publication Date
JPH01100277A true JPH01100277A (en) 1989-04-18

Family

ID=17294981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62256607A Pending JPH01100277A (en) 1987-10-12 1987-10-12 Curved plate stuck with rigid carbonaceous film, manufacture and manufacturing device thereof

Country Status (1)

Country Link
JP (1) JPH01100277A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04224681A (en) * 1990-03-16 1992-08-13 Carl Zeiss:Fa Plasma cvd method for forming dielectric and/or metal coating system on internal surface and/or external surface of almost dome-shaped substrate
WO1996005111A1 (en) * 1994-08-11 1996-02-22 Kirin Beer Kabushiki Kaisha Carbon film-coated plastic container
WO1996005112A1 (en) * 1994-08-11 1996-02-22 Kirin Beer Kabushiki Kaisha Carbon film-coated plastic container manufacturing apparatus and method
US5556464A (en) * 1992-07-15 1996-09-17 Sumitomo Electric Industries, Ltd. Vibration plate of a speaker and method for producing same
JP2000345347A (en) * 1999-06-09 2000-12-12 Koito Mfg Co Ltd Formation of protective film for automotive plastic parts
JP2003081240A (en) * 2001-09-13 2003-03-19 Toppan Printing Co Ltd Apparatus for forming thin film on cup-like container and method for forming thin film
JP2005233960A (en) * 2004-02-17 2005-09-02 Univ Of Electro-Communications Microprobe, manufacturing apparatus thereof, and method
JP2009120881A (en) * 2007-11-13 2009-06-04 Tsukishima Kikai Co Ltd Plasma cvd system and method for forming plastic surface protective film
JP2009120880A (en) * 2007-11-13 2009-06-04 Tsukishima Kikai Co Ltd Plasma treatment device, and method for forming plastic surface protective film

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04224681A (en) * 1990-03-16 1992-08-13 Carl Zeiss:Fa Plasma cvd method for forming dielectric and/or metal coating system on internal surface and/or external surface of almost dome-shaped substrate
US5556464A (en) * 1992-07-15 1996-09-17 Sumitomo Electric Industries, Ltd. Vibration plate of a speaker and method for producing same
WO1996005111A1 (en) * 1994-08-11 1996-02-22 Kirin Beer Kabushiki Kaisha Carbon film-coated plastic container
WO1996005112A1 (en) * 1994-08-11 1996-02-22 Kirin Beer Kabushiki Kaisha Carbon film-coated plastic container manufacturing apparatus and method
US6805931B2 (en) 1994-08-11 2004-10-19 Kirin Beer Kabushiki Kaisha Plastic container coated with carbon film
JP2000345347A (en) * 1999-06-09 2000-12-12 Koito Mfg Co Ltd Formation of protective film for automotive plastic parts
JP2003081240A (en) * 2001-09-13 2003-03-19 Toppan Printing Co Ltd Apparatus for forming thin film on cup-like container and method for forming thin film
JP2005233960A (en) * 2004-02-17 2005-09-02 Univ Of Electro-Communications Microprobe, manufacturing apparatus thereof, and method
JP2009120881A (en) * 2007-11-13 2009-06-04 Tsukishima Kikai Co Ltd Plasma cvd system and method for forming plastic surface protective film
JP2009120880A (en) * 2007-11-13 2009-06-04 Tsukishima Kikai Co Ltd Plasma treatment device, and method for forming plastic surface protective film

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