JPH01177973A - Grinding tool - Google Patents

Abstract

PURPOSE:To keep excellent grinding possible for long time by forming a diamond film on a backing, and thereby preventing the falling off of a diamond grain during the grinding to widen an effective grinding area. CONSTITUTION:Fine diamond crystals are firmly stuck onto a backing 2 by plasma CVD method to form a fine crystal diamond film 3 and thereby to produce a desired grinding tool. Thus the diamond film 1 can be distributedly formed in a fine structural state to widen an effective grinding area, and excellent grinding can be kept for long time.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a polishing tool, and more particularly to a polishing tool formed by forming a diamond film on a substrate.

[Prior Art and its Problems] Conventionally, a polishing tool in which diamond particles are attached to a substrate via a metal plating layer or the like has been known (Utility Model Application No. 56-28856).

In this type of polishing tool, when viewed microscopically, some of the diamond particles are embedded in the metal plating layer, and some of them are attached to the metal plating layer in a protruding state. Moreover, the distribution of diamond particles protruding from the metal plating layer is in that state.

Therefore, when a non-abrasive tool is polished with the above-mentioned polishing tool, the surface of the tool to be polished and the surface of the polishing tool where diamond particles are present come into sliding contact with a very large frictional force. Considering this in terms of the microscopic state, While a huge stress is applied to the uneven surface of the diamond, the diamond retention force of the nickel plating layer is too weak, so diamond particles easily fall off from the nickel plating layer during polishing.
There is a problem that the polishing ability rapidly decreases.

Moreover, as mentioned above, the protruding portions of the diamond particles from the metal plating layer are coarsely distributed on the surface of the metal plating layer, so there is a problem that the polishing ability is not sufficient.

The present invention solves the disadvantages of the prior art as described above.Diamond abrasive grains are densely distributed over the entire surface and are firmly attached to the base material. The purpose is to provide polishing tools.

[Means for Solving the Problems] As a result of intensive research to achieve the above object, the present inventors found that a diamond film formed directly on the surface of a base material has a large effective polishing area and is ideal as a polishing surface. The present invention was achieved by discovering that the diamond particles do not easily peel off during polishing.

That is, the structure of the present invention is a polishing tool characterized by forming a diamond film on a base material.

In the polishing tool of the present invention, the material of the base material is not particularly limited, and examples thereof include iron, copper, cobalt, chromium, manganese, molybdenum, niobium, nickel, palladium,
Platinum, rhenium, rhodium, ruthenium, tantalum, thorium, titanium.

Metals such as uranium, vanadium, tungsten, yttrium, and zirconium, their oxides, nitrides, and carbides, their alloys, cemented carbide such as W-C type and Ti-C type, Ai, O, -Fe type, TiC-Ni system, T
Any of cermets such as iC-Go type and B, C-Fe type and various ceramics can be used. Among the above, stainless steel,
W-C type and Ti-C type cemented carbide and ceramics are usually used.

The shape of the base material is not particularly limited, and can take various shapes such as a disk shape, a square plate shape, a rectangular plate shape, a round bar shape, a square bar shape, and a sheet shape.

Although the properties of the diamond film in the polishing tool of the present invention cannot be unconditionally defined, an example of the properties of the diamond film is as follows.

It can be described as a dense aggregate of diamond microcrystals.

The average particle diameter of the diamond particles is usually about 0.1 to about 0.0 m, preferably about 0.3 to about 0.0 m. A diamond film can be obtained by being a dense aggregate of such ultrafine diamond particles.

The thickness of the diamond film is usually 0.1 to 50 μL.
m, preferably 0.5 to lOILm.

As a method for obtaining the diamond film, for example, there is a method in which an excited gas obtained by exciting a gas containing a carbon source gas is brought into contact with the base material.

In the method, the carbon source gas includes, for example, alkanes such as methane, ethane, propane, butane, pentane, and hexane, alkenes such as ethylene, propylene, butene, pentene, and butadiene, alkynes such as acetylene, benzene, Examples include aromatic hydrocarbons such as toluene, xylene, indene, naphthalene, and phenanthrene; cycloparaffins such as cyclopropane and cyclohexane; cycloolefins such as cyclopentene and cyclohexene; and halides of the various compounds mentioned above. .

Further, as the carbon source gas, carbon oxide, carbon dioxide, oxygen-containing carbon compounds such as methyl alcohol and ethyl alcohol, and nitrogen-containing carbon compounds such as methylamine, ethylamine and aniline can also be used. moreover,
Although it is not a single item, it is classified as Class 4 hazardous materials under the Fire Service Act, such as gasoline.
Class 1 petroleum, class 2 petroleum such as kerosene, turpentine oil, camphor oil, pine oil, etc., class 3 petroleum such as heavy oil, and class 4 petroleum such as gear oil and cylinder oil can also be effectively used. Also, among the carbon source gases that can be used in combination with the various carbon compounds described above, methane, carbon oxide, carbon dioxide, and the like are preferred.

The above carbon oxide and carbon dioxide can be obtained by, for example, reacting coal, coke, etc. with air at a hot time (sufficiently purified generating furnace gas or water gas, or commercially available carbon monoxide in cylinders). Gas, carbon dioxide gas, or cracked gas obtained by decomposing methanol can be used.

When using the carbon source gas, preferable results may be obtained if hydrogen gas is used in combination.

When hydrogen gas is excited, the excited carbon in the excited gas obtained by exciting the carbon source gas removes graphite-structured carbon, and the s' p 3 structure of carbon atoms in the precipitated diamond crystal. It has the effect of maintaining the temperature even at high temperatures.

Therefore, it is necessary to be careful about the amount of hydrogen gas used, but if the carbon source gas is carbon monoxide gas, usually
The amount of hydrogen gas used is -20 to 9 for carbon oxide gas.
It is 9.9 mol%, preferably 50 to 99.9 mol%.

In the above method, the means for obtaining a mixed gas containing carbon in an excited state obtained by exciting the carbon source gas includes:
For example, methods such as a plasma CVD method, a sputtering method, an ionization vapor deposition method, an ion beam vapor deposition method, a thermal filament method, and a chemical transport method can be used. Preferably,
This is a plasma CVD method.

In the above method, an inert gas may be used as a carrier for the carbon source gas.

Specific examples of the inert gas include argon gas, neon gas, helium gas, xenon gas, and nitrogen gas.

These carrier gases may be used alone or in combination of two or more. Among the carrier gases, nitrogen gas, argon gas, etc. are preferable.

In the above method, the reaction proceeds under the following conditions to form a diamond film on the substrate.

That is, since the temperature of the surface of the base material differs depending on the excitation means of the carbon source gas, it cannot be determined generally, but for example, when using the plasma CVD method, it is usually 400 to 1,400 ℃. °C, preferably 450 °C
~1,200°C.

If the temperature is lower than 400° C., the deposition rate of the diamond film may be slow or excited carbon may not be produced. On the other hand, if the temperature is higher than 1,400°C, it may be difficult to form diamonds, or the diamond film deposited on the base material may be etched away.
There may be no improvement in the deposition rate.

The reaction pressure is usually 10 to 10 torr, preferably 1 to 800 Lorr.
If it is lower than 103 torr, the deposition rate of the diamond film will be slow or the diamond film will not precipitate.On the other hand, if it is higher than 103 torr, no corresponding effect will be obtained.

An embodiment of the present invention will be described with reference to the drawings.

In the polishing tool 1 shown in FIG. 1, a diamond film 3 is formed on a suitable base material 2.

This diamond W23 is formed by a plasma CVD method, is an aggregate of diamond abrasive grains distributed in a dense state, and has a large polishing effective area.

When the polishing tool of the present invention is actually used, polishing is performed using the diamond film surface, and the diamond film has a high polishing accuracy commensurate with the grain size by controlling the particle size produced. Precision polishing can be performed.

[Example] Hereinafter, the present invention will be explained in more detail by showing examples.

(Example 1) In a microwave plasma CVD apparatus, a frequency of 2.4
Using a 5GIIz microwave power source, the substrate temperature was 900℃.
The output was set at 600 W under the conditions of temperature and pressure of 50 torr.

Next, carbon monoxide was introduced into the reaction chamber at a flow rate of 3 Scc and hydrogen at a flow rate of 100 sec, and diamond was synthesized for 1 hour by the microwave plasma CVD method. A diamond film with a smooth surface of 6ILm was formed. Note that the base material is disc-shaped tungsten carbide (WC) (Go content = 12
%) was used.

Using this diamond-coated cemented carbide as a polishing tool, a direct pressure of 12.7
This polishing tool was pressed at 7 kg/cs2 and rotated once to polish the surface of the object to be polished.

As a result, the amount of polishing debris at 2,000 rotations was 0.
11 g, and the amount of polishing waste during rotations from 8,000th rotation to 10,000th rotation was 0.10g.

On the other hand, for comparison, referring to Japanese Utility Model Application Publication No. 56-28856, it is found that after 2,000 times of polishing, the polishing ratio is 0.1.
However, during polishing from rotations a and ooo to the 10,000th rotation, the amount of polishing debris was 0.07g. That is, in the polishing tool described in the above-mentioned Japanese Utility Model Publication No. 56-28856, the polishing force after the a, ooo rotation is halved up to the initial 2,000 rotations, whereas in the polishing tool of the present invention, the polishing force is halved. The polishing tF force decreased by only about 10%.

(Example 2) In Example 1, alumina was used as the base material, and the reaction was carried out for 30 minutes under conditions of a base material temperature of 930° C., a pressure of 50 torr, a carbon oxide flow rate of 5.0 sec, and a hydrogen flow rate of 95 sec. As a result, a diamond film with a thickness of 4 IL was formed on the substrate.

This alumina coated with a diamond film was used as a polishing tool, and this polishing tool was pressed against the object to be polished with a direct pressure of 12.77 kg/cm2 whose hardness was larger than that in Example 1, and the tool was rotated to remove the object to be polished. Polished the surface of the object.

As a result, the amount of polishing debris at 2,000 rotations is o
, tog, and the amount of polishing debris from the 8,000th rotation to the 10,000th rotation was 0.08 g.

[Effects of the Invention] As mentioned above, the polishing tool of the present invention forms a microcrystalline diamond film firmly adhered to the base material, so when polishing the object to be polished, it is possible to polish the workpiece without using the conventional polishing tool. No diamond particles will fall off.

Moreover, since the effective polishing area is large, it is possible to perform good polishing over a long period of time without reducing the polishing ability, and it is also possible to perform high-precision polishing such as Sa surface finishing. It has various advantages such as:

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional view showing a polishing tool according to an embodiment of the present invention. l... Polishing tool 2... Base material 3... Diamond film patent applicant Idemitsu Petrochemical Co., Ltd.

Claims (2)

[Claims] (1) A polishing tool characterized by forming a diamond film on a base material. (2) The polishing tool according to claim 1, wherein the diamond film is obtained by bringing an excited gas obtained by exciting a gas containing a carbon source gas into contact with the base material.