JP2003048780A5 - - Google Patents

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Publication number
JP2003048780A5
JP2003048780A5 JP2001233369A JP2001233369A JP2003048780A5 JP 2003048780 A5 JP2003048780 A5 JP 2003048780A5 JP 2001233369 A JP2001233369 A JP 2001233369A JP 2001233369 A JP2001233369 A JP 2001233369A JP 2003048780 A5 JP2003048780 A5 JP 2003048780A5
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Japan
Prior art keywords
dielectric constant
heat treatment
aluminum nitride
porosity
thermal conductivity
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Pending
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JP2001233369A
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Japanese (ja)
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JP2003048780A (en
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Priority to JP2001233369A priority Critical patent/JP2003048780A/en
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Publication of JP2003048780A5 publication Critical patent/JP2003048780A5/ja
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Description

誘電率
上記と同様にして調整した１０％ＳｉＯ２の試料について、熱処理（１９００℃×３時間）前後の誘電率を測定した。この２つの試料についての気孔率、熱伝導率及び誘電率を表３に示す。

Figure 2003048780
熱処理後は試料は窒化アルミニウムとなっているため（表２）、熱伝導率は処理前の１５倍以上である。気孔率も４８％と高くなって多孔質になっているため、窒化アルミニウムの誘電率８と空気の誘電率が１であることから複合則に従って予測したとおりに、４．８という低い誘電率を有する窒化アルミニウムが生成したことを確認できた。

For dielectric constant above and 10% SiO 2 sample prepared in the same manner, the heat treatment (1900 ° C. × 3 hours) were measured dielectric constant before and after. Table 3 shows the porosity, thermal conductivity and dielectric constant of these two samples.
Figure 2003048780
 After the heat treatment, the sample is made of aluminum nitride (Table 2), so that the thermal conductivity is 15 times or more that before the heat treatment. Since that is a porosity also 48% and raised by porous, the Ri Contact dielectric constant 8 and air the dielectric constant of aluminum nitride was predicted according composite rule since it is 1, as low as 4.8 dielectric It was confirmed that aluminum nitride having a high yield was produced.

JP2001233369A 2001-08-01 2001-08-01 Porous aluminum nitride Pending JP2003048780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001233369A JP2003048780A (en) 2001-08-01 2001-08-01 Porous aluminum nitride

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Application Number Priority Date Filing Date Title
JP2001233369A JP2003048780A (en) 2001-08-01 2001-08-01 Porous aluminum nitride

Publications (2)

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JP2003048780A JP2003048780A (en) 2003-02-21
JP2003048780A5 true JP2003048780A5 (en) 2008-09-25

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JP2001233369A Pending JP2003048780A (en) 2001-08-01 2001-08-01 Porous aluminum nitride

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080091401A (en) * 2004-06-21 2008-10-10 가부시끼가이샤 도꾸야마 Laminated body and method for production thereof, submount and compound light emitting element
JP6697363B2 (en) * 2015-10-30 2020-05-20 日本碍子株式会社 Semiconductor manufacturing equipment member, manufacturing method thereof, and heater with shaft
CN114477988B (en) * 2022-03-28 2023-03-24 天通控股股份有限公司 Easily-formed and high-strength ferrite material and preparation method thereof
CN115141022A (en) * 2022-07-28 2022-10-04 江苏正力新能电池技术有限公司 Preparation method of porous ceramic bottom supporting plate, porous ceramic bottom supporting plate and battery

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6270210A (en) * 1985-09-24 1987-03-31 Natl Inst For Res In Inorg Mater Production of aluminum nitride-silicon carbide composite fine powder
JP2730941B2 (en) * 1988-12-27 1998-03-25 イビデン株式会社 Manufacturing method of aluminum nitride sintered body
JPH046161A (en) * 1990-04-23 1992-01-10 Kawasaki Steel Corp Production of aln sintered body
JP3003000B2 (en) * 1990-08-29 2000-01-24 京セラ株式会社 Aluminum nitride polytype sintered body and method for producing the same

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