JP2003055758A5 - - Google Patents
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- JP2003055758A5 JP2003055758A5 JP2001243120A JP2001243120A JP2003055758A5 JP 2003055758 A5 JP2003055758 A5 JP 2003055758A5 JP 2001243120 A JP2001243120 A JP 2001243120A JP 2001243120 A JP2001243120 A JP 2001243120A JP 2003055758 A5 JP2003055758 A5 JP 2003055758A5
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- Japan
- Prior art keywords
- sputtering
- tungsten
- sintering
- sintered compact
- producing
- Prior art date
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Description
【０００５】
【課題を解決するための手段】
本発明は、
１．粉体比表面積が０．４ｍ２／ｇ（ＢＥＴ法）以上、酸素含有量３６０ｐｐｍ以上１０００ｐｐｍ以下のタングステン粉末を用いて焼結することを特徴とするスパッタリング用タングステン焼結体ターゲットの製造方法。
２．粉体比表面積が０．６ｍ２／ｇ〜０．８ｍ２／ｇ（ＢＥＴ法）であり、酸素含有量３６０ｐｐｍ以上８００ｐｐｍ以下のタングステン粉末を用いて焼結することを特徴とする請求項１記載のスパッタリング用タングステン焼結体ターゲットの製造方法。
３．粉体比表面積が０．４ｍ２／ｇ（ＢＥＴ法）以上のタングステン粉末を用い、真空あるいは還元雰囲気中、加圧開始温度１２００°Ｃ以下でホットプレス焼結を行った後、さらに熱間等方加圧焼結（ＨＩＰ）することを特徴とするスパッタリング用タングステン焼結体ターゲットの製造方法。
４．粉体比表面積が０．６ｍ２／ｇ〜０．８ｍ２／ｇ（ＢＥＴ法）であることを特徴とする請求項３記載のスパッタリング用タングステン焼結体ターゲットの製造方法。
５．ホットプレス焼結により相対密度を９３％以上にすることを特徴とする請求項１〜４のいずれかに記載のスパッタリング用タングステン焼結体ターゲットの製造方法。
６．温度１６００°Ｃ以上、加圧力１５０ｋｇ／ｃｍ２以上でホットプレスすることを特徴とする請求項１〜５のいずれかに記載のスパッタリング用タングステン焼結体ターゲットの製造方法。
７．カプセリングをせずに熱間等方加圧焼結（ＨＩＰ）することを特徴とする請求項１〜６のいずれかに記載のスパッタリング用タングステン焼結体ターゲットの製造方法。
８．温度１７００°Ｃ以上、加圧力１０００ｋｇ／ｃｍ２以上で熱間等方加圧焼結することを特徴とする請求項１〜７のいずれかに記載のスパッタリング用タングステン焼結体ターゲットの製造方法。
９．温度１８５０°Ｃ以上、加圧力１８００ｋｇ／ｃｍ２以上で熱間等方加圧焼結することを特徴とする請求項１〜７のいずれかに記載のスパッタリング用タングステン焼結体ターゲットの製造方法。
を提供する。[0005]
[Means for Solving the Problems]
The present invention
1. A method for producing a sintered tungsten target for sputtering characterized by sintering using a tungsten powder having a powder specific surface area of 0.4 m 2 / g (BET method) or more and an oxygen content of 360 ppm or more and 1000 ppm or less .
2. Powder specific surface area of 0.6m 2 /g~0.8m 2 / g (BET method), according to claim 1, wherein the sintering using the following tungsten powder oxygen content 360ppm or 800ppm Method of producing a tungsten sintered compact target for sputtering.
3. After performing hot press sintering using a tungsten powder with a powder specific surface area of 0.4 m 2 / g (BET method) or more in a vacuum or reducing atmosphere at a pressure start temperature of 1200 ° C. or less, it is further subjected to hot etc. A method for producing a tungsten sintered compact target for sputtering, characterized by performing pressure sintering (HIP).
4. 3. manufacturing method of the sputtering tungsten sintered target of wherein the powder specific surface area of 0.6m 2 /g~0.8m 2 / g (BET method).
5. The relative density is made 93% or more by hot press sintering, The manufacturing method of the tungsten sintered compact target for sputtering in any one of the Claims 1-4 characterized by the above-mentioned.
6. The method for producing a tungsten sintered compact target for sputtering according to any one of claims 1 to 5, wherein hot pressing is performed at a temperature of 1600 ° C or more and a pressure of 150 kg / cm 2 or more.
7. The method for producing a tungsten sintered compact target for sputtering according to any one of claims 1 to 6, wherein hot isostatic pressure sintering (HIP) is carried out without encapsulation.
8. The method for producing a tungsten sintered compact target for sputtering according to any one of claims 1 to 7, wherein hot isotropic pressure sintering is performed at a temperature of 1700 ° C or more and a pressure of 1000 kg / cm 2 or more.
9. Temperature 1850 ° C or higher, pressure 1800 kg / cm 2 or more by the manufacturing method of the sputtering tungsten sintered compact target according to claim 1, characterized in that the hot isostatic pressure sintering.
I will provide a.
Claims (9)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001243120A JP2003055758A (en) | 2001-08-10 | 2001-08-10 | Tungsten sintered compact target for sputtering, and its manufacturing method |
| PCT/JP2002/005545 WO2003016585A1 (en) | 2001-08-10 | 2002-06-05 | Sintered tungsten target for sputtering and method for preparation thereof |
| TW91115515A TW574377B (en) | 2001-08-10 | 2002-07-12 | Sintered tungsten target for sputtering and method for preparation thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001243120A JP2003055758A (en) | 2001-08-10 | 2001-08-10 | Tungsten sintered compact target for sputtering, and its manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007153849A Division JP4885065B2 (en) | 2007-06-11 | 2007-06-11 | Method for manufacturing tungsten sintered compact target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003055758A JP2003055758A (en) | 2003-02-26 |
| JP2003055758A5 true JP2003055758A5 (en) | 2004-12-09 |
Family
ID=19073264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001243120A Pending JP2003055758A (en) | 2001-08-10 | 2001-08-10 | Tungsten sintered compact target for sputtering, and its manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2003055758A (en) |
| TW (1) | TW574377B (en) |
| WO (1) | WO2003016585A1 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005073418A1 (en) * | 2004-01-30 | 2005-08-11 | Nippon Tungsten Co., Ltd. | Tungsten based sintered compact and method for production thereof |
| WO2009116213A1 (en) * | 2008-03-17 | 2009-09-24 | 日鉱金属株式会社 | Sintered target and method for production of sintered material |
| CN102046822B (en) * | 2008-06-02 | 2016-02-10 | Jx日矿日石金属株式会社 | Tungsten sinter sputtering target |
| WO2010137485A1 (en) | 2009-05-27 | 2010-12-02 | Jx日鉱日石金属株式会社 | Sintered body target and method for producing sintered body |
| US9388489B2 (en) | 2010-09-29 | 2016-07-12 | Ulvac, Inc. | Tungsten target and method for producing same |
| CN103567443B (en) * | 2012-07-25 | 2015-10-07 | 宁波江丰电子材料股份有限公司 | The preparation method of tungsten target material |
| CN103805952B (en) * | 2013-12-12 | 2016-05-18 | 株洲硬质合金集团有限公司 | A kind of large scale high purity tungsten target and production method thereof |
| CN105345007B (en) * | 2014-08-15 | 2017-11-07 | 安泰科技股份有限公司 | A kind of preparation method of high dense chrome tungsten alloy target material |
| CN107429388B (en) * | 2015-03-06 | 2020-08-14 | 恩特格里斯公司 | High purity tungsten hexacarbonyl for solid source delivery |
| JP7174476B2 (en) | 2017-03-31 | 2022-11-17 | Ｊｘ金属株式会社 | tungsten target |
| JP7308013B2 (en) * | 2017-11-10 | 2023-07-13 | Ｊｘ金属株式会社 | Tungsten sputtering target and manufacturing method thereof |
| JP2020153015A (en) * | 2019-03-15 | 2020-09-24 | 三菱マテリアル株式会社 | Tungsten oxide sputtering target |
| CN115415526B (en) * | 2021-05-13 | 2023-05-19 | 安泰天龙钨钼科技有限公司 | Oversized tungsten tube and preparation method thereof |
| CN113523273B (en) * | 2021-06-17 | 2022-10-21 | 北京科技大学 | Powder metallurgy method for rapidly preparing ultrafine crystal pure tungsten material under multi-field coupling |
| JP7278463B1 (en) * | 2022-06-27 | 2023-05-19 | 株式会社アルバック | Tungsten target and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0593267A (en) * | 1991-10-01 | 1993-04-16 | Hitachi Metals Ltd | Tungstren target for semiconductor and its manufacture |
| JP3280054B2 (en) * | 1992-02-10 | 2002-04-30 | 日立金属株式会社 | Method for manufacturing tungsten target for semiconductor |
| JPH0776771A (en) * | 1993-09-08 | 1995-03-20 | Japan Energy Corp | Tungsten sputtering target |
| JP3086447B1 (en) * | 1999-03-04 | 2000-09-11 | 株式会社ジャパンエナジー | Tungsten target for sputtering and method for producing the same |
| JP3721014B2 (en) * | 1999-09-28 | 2005-11-30 | 株式会社日鉱マテリアルズ | Method for manufacturing tungsten target for sputtering |
-
2001
- 2001-08-10 JP JP2001243120A patent/JP2003055758A/en active Pending
-
2002
- 2002-06-05 WO PCT/JP2002/005545 patent/WO2003016585A1/en active Application Filing
- 2002-07-12 TW TW91115515A patent/TW574377B/en not_active IP Right Cessation
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