JP2003037493A - Interface circuit - Google Patents

Interface circuit

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Publication number
JP2003037493A
JP2003037493A JP2001221453A JP2001221453A JP2003037493A JP 2003037493 A JP2003037493 A JP 2003037493A JP 2001221453 A JP2001221453 A JP 2001221453A JP 2001221453 A JP2001221453 A JP 2001221453A JP 2003037493 A JP2003037493 A JP 2003037493A
Authority
JP
Japan
Prior art keywords
power supply
voltage
supply terminal
terminal
cmos inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001221453A
Other languages
Japanese (ja)
Other versions
JP4449264B2 (en
Inventor
Hiroichi Toyoda
博一 豊田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2001221453A priority Critical patent/JP4449264B2/en
Publication of JP2003037493A publication Critical patent/JP2003037493A/en
Application granted granted Critical
Publication of JP4449264B2 publication Critical patent/JP4449264B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Logic Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an interface circuit that can eliminate sneak path for a voltage from being produced, even if a voltage difference between two power supplies occurs, while preventing its internal elements due to a surge voltage from breaking down. SOLUTION: The interface circuit 11 comprises a CMOS inverter 13 that is energized from a power terminal Vc1; a CMOS inverter 14 that is energized from a power terminal Vc2; and two Zener diodes 16, 17 placed between the power terminal Vc2 and an input terminal 14a connected in anti-series. Even if a voltage Vcc1 is applied to the input terminal 14a of the CMOS inverter 14, no power will be supplied to the power terminal Vc2 due to the presence of the Zener diodes 16, 17. Further, even if a surge voltage is applied to the power terminal Vc1, clamp the surge voltage will be clamped by the Zener diodes 16, 17, and a current caused by the surge voltage is led to the power terminal Vc2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、静電気などのサー
ジ電圧から回路を保護する機能を備えたインターフェイ
ス回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an interface circuit having a function of protecting a circuit from surge voltage such as static electricity.

【0002】[0002]

【従来の技術】図2は、従来のインターフェイス回路1
の例を示しており、入力側のNOTゲート2と出力側の
NOTゲート3との間に接続されている。このインター
フェイス回路1は、電源端子Vc1から給電されるCM
OSインバータ4と電源端子Vc2から給電されるCM
OSインバータ5と、インバータ回路4の出力端子4a
と電源端子Vc2との間に接続されたダイオード6とか
ら構成されている。
2. Description of the Related Art FIG. 2 shows a conventional interface circuit 1.
In the example of FIG. 2 and is connected between the input side NOT gate 2 and the output side NOT gate 3. This interface circuit 1 is a CM that is supplied with power from a power supply terminal Vc1.
CM fed from the OS inverter 4 and the power supply terminal Vc2
OS inverter 5 and output terminal 4a of the inverter circuit 4
And a diode 6 connected between the power supply terminal Vc2 and the power supply terminal Vc2.

【0003】このような構成により、何らかの事情によ
り静電気等のサージ電圧が電源端子Vc1に印加されて
も、サージ電圧による電流は電源端子Vc1側から電源
端子Vc2に導かれ、CMOSインバータ5のゲートを
保護することができる。
With such a structure, even if a surge voltage such as static electricity is applied to the power supply terminal Vc1 for some reason, a current due to the surge voltage is introduced from the power supply terminal Vc1 side to the power supply terminal Vc2 and the gate of the CMOS inverter 5 is opened. Can be protected.

【0004】[0004]

【発明が解決しようとする課題】ところで上述の回路に
おいて、各電源端子Vc1,Vc2に接続する電源を共
通にしている場合、消費電流を低減するためには、当該
電源をオフしなければならない。このときCMOSイン
バータ4,5に両方電源供給されない状態となるが、以
下に説明するスタンバイ状態を維持したいという要望が
ある。
By the way, in the above circuit, when the power supply connected to each of the power supply terminals Vc1 and Vc2 is common, the power supply must be turned off in order to reduce current consumption. At this time, both of the CMOS inverters 4 and 5 are not supplied with power, but there is a demand to maintain the standby state described below.

【0005】スタンバイ状態というのは、CMOSイン
バータ4,5のそれぞれの電源端子Vc1,Vc2に対
して異なる電源から給電する構成とし、CMOSインバ
ータ4には給電して動作させCMOSインバータ5には
給電しないようにすることで節電することを示してい
る。しかしながら、このようにスタンバイ状態にした場
合には、上述した回路構成では以下に挙げる問題が生じ
る。
The standby state means that the power supply terminals Vc1 and Vc2 of the CMOS inverters 4 and 5 are supplied with power from different power supplies, the CMOS inverter 4 is supplied with power and is operated, and the CMOS inverter 5 is not supplied with power. By doing so, it shows that it saves electricity. However, when the standby state is set in this way, the following problems occur in the circuit configuration described above.

【0006】電源端子Vc1から供給される電源Vcc
1は、CMOSインバータ5の入力信号のレベルがハイ
状態のとき、ダイオード6を介して電源端子Vc2に給
電する。したがって、電源端子Vc2−GND間にはV
cc1−Vf[V]の電圧が生じる。そしてNOTゲー
ト3は、電源端子Vc2−GND間に生じたVcc1−
Vf[V]の電圧により駆動され、スタンバイ状態とし
たときにも電流が消費されることになり、消費電流を低
減できないという問題が生じる。
Power supply Vcc supplied from power supply terminal Vc1
1 supplies power to the power supply terminal Vc2 via the diode 6 when the level of the input signal of the CMOS inverter 5 is in the high state. Therefore, V is connected between the power supply terminal Vc2 and GND.
A voltage of cc1-Vf [V] is generated. The NOT gate 3 is connected to the power source terminal Vc2-Vcc1-
It is driven by the voltage of Vf [V], and current is consumed even in the standby state, which causes a problem that the current consumption cannot be reduced.

【0007】本発明は、上記事情に鑑みてなされたもの
で、その目的は、静電気等のサージ電圧による内部素子
の破壊を防止しながら消費電流を低減できるインターフ
ェイス回路を提供することにある。
The present invention has been made in view of the above circumstances, and an object thereof is to provide an interface circuit capable of reducing current consumption while preventing destruction of internal elements due to surge voltage such as static electricity.

【0008】[0008]

【課題を解決するための手段】請求項1記載のインター
フェイス回路によれば、第1の電源端子に給電すると共
に、第2の電源端子を非給電状態とすることで、第1の
CMOSインバータのみに給電しスタンバイ状態を保持
させている場合、たとえ第2のCMOSインバータの入
力端子に電源電圧が印加されても、第2の電源端子との
間の電圧が所定レベル以上とはならないように設定され
ているので、第2の電源端子は非給電状態が保持され、
第2の電源端子Vc2に接続される他回路に対して電源
が供給されず、スタンバイ状態を保持しながら消費電流
を低減できる。
According to the interface circuit of the present invention, only the first CMOS inverter is provided by supplying power to the first power supply terminal and leaving the second power supply terminal in a non-power supply state. If the power supply voltage is applied to the second CMOS inverter and the standby state is maintained, the voltage between the second power supply terminal and the second power supply terminal does not exceed the predetermined level even if the power supply voltage is applied to the input terminal. Therefore, the second power supply terminal is kept in the non-powered state,
Power is not supplied to other circuits connected to the second power supply terminal Vc2, and the current consumption can be reduced while maintaining the standby state.

【0009】そして、第1の電源端子から静電気等のサ
ージ電圧が加えられた場合、そのサージ電圧が所定レベ
ル以上となると電圧制限手段が導通状態となり、サージ
電圧による電流は第1の電源端子から第2の電源端子に
導かれる。これによりサージ電圧による第2のCMOS
インバータ等の内部素子の破壊を防止することができ
る。
When a surge voltage such as static electricity is applied from the first power supply terminal, the voltage limiting means becomes conductive when the surge voltage exceeds a predetermined level, and the current due to the surge voltage is supplied from the first power supply terminal. It is led to the second power supply terminal. Thereby, the second CMOS by the surge voltage
It is possible to prevent destruction of internal elements such as an inverter.

【0010】請求項2記載のインターフェイス回路によ
れば、電圧制限手段として2つのツェナーダイオードを
設けることで、第2のCMOSインバータの入力端子に
第2の電源端子よりも高い電圧が印加されたときに、ツ
ェナー電圧と順方向電圧との和の電圧でクランプされる
ことになり、構成を複雑化せず請求項1記載の発明の作
用効果を得ることができる。
According to the interface circuit of the second aspect, by providing two Zener diodes as the voltage limiting means, when a voltage higher than that of the second power supply terminal is applied to the input terminal of the second CMOS inverter. In addition, the voltage is clamped by the sum voltage of the Zener voltage and the forward voltage, and the operational effect of the invention according to claim 1 can be obtained without complicating the configuration.

【0011】[0011]

【発明の実施の形態】以下、本発明の一実施形態を図1
を参照して説明する。図1は、インターフェイス回路1
1の電気的構成を示している。このインターフェイス回
路11は、NOTゲート12の出力端子12aに接続さ
れたCMOSインバータ13と、このCMOSインバー
タ13の出力端子に入力端子14aが接続されるCMO
Sインバータ14等から構成されている。尚、CMOS
インバータ14の出力端子は、NOTゲート15の入力
端子に接続されている。
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to FIG.
Will be described with reference to. FIG. 1 shows the interface circuit 1.
1 shows an electrical configuration of 1. The interface circuit 11 includes a CMOS inverter 13 connected to an output terminal 12a of a NOT gate 12 and a CMO in which an input terminal 14a is connected to an output terminal of the CMOS inverter 13.
It is composed of an S inverter 14 and the like. In addition, CMOS
The output terminal of the inverter 14 is connected to the input terminal of the NOT gate 15.

【0012】CMOSインバータ13は、例えば3Vの
電源電圧Vcc1が印加される電源端子Vc1(第1の
電源端子)とグランドとの間に、Pチャネル型のMOS
トランジスタ13bおよびNチャネル型のMOSトラン
ジスタ13cが直列に接続されたもので、MOSトラン
ジスタ13b,13cのゲートを共通に接続して入力端
子とし、共通のドレインが出力端子とされCMOSイン
バータ14の入力端子14aに接続されている。
The CMOS inverter 13 includes a P-channel MOS transistor between a power supply terminal Vc1 (first power supply terminal) to which a power supply voltage Vcc1 of 3V is applied and the ground.
A transistor 13b and an N-channel type MOS transistor 13c are connected in series. The gates of the MOS transistors 13b and 13c are commonly connected to serve as an input terminal, and the common drain serves as an output terminal of the CMOS inverter 14. 14a.

【0013】また同様に、CMOSインバータ14は、
電源端子Vc2(第2の電源端子)とグランドとの間
に、Pチャネル型のMOSトランジスタ14bおよびN
チャネル型のMOSトランジスタ14cが直列に接続さ
れたもので、MOSトランジスタ14b,14cのゲー
トを共通に接続して入力端子14aとし、共通のドレイ
ンが出力端子14dとなる。また、電源端子Vc2と入
力端子14aとの間には、ツェナーダイオード16及び
ツェナーダイオード17が逆方向に直列接続されてい
る。尚、ツェナーダイオード16,17により本発明に
おける電圧制限手段18が構成されている。各ツェナー
ダイオード16,17の順方向電圧Vfは例えば0.6
Vとし、ツェナー電圧Vzは6Vであるものとして以下
説明する。尚、このとき所定レベルは(ツェナーダイオ
ード17のツェナー電圧Vz)+(ツェナーダイオード
16の順方向電圧Vf)=6.6Vとなる。電源端子V
c1及び電源端子Vc2には、それぞれ異なる電源回路
(図示せず)が接続されており、それぞれ電源電圧Vc
c1,Vcc2を与えるようになっている。
Similarly, the CMOS inverter 14 is
Between the power supply terminal Vc2 (second power supply terminal) and the ground, the P-channel type MOS transistors 14b and N are connected.
Channel type MOS transistors 14c are connected in series. The gates of the MOS transistors 14b and 14c are commonly connected to serve as an input terminal 14a, and the common drain serves as an output terminal 14d. A Zener diode 16 and a Zener diode 17 are connected in series in opposite directions between the power supply terminal Vc2 and the input terminal 14a. Incidentally, the Zener diodes 16 and 17 constitute the voltage limiting means 18 in the present invention. The forward voltage Vf of each Zener diode 16, 17 is, for example, 0.6.
In the following description, it is assumed that V is V and the Zener voltage Vz is 6V. At this time, the predetermined level is (Zener voltage Vz of Zener diode 17) + (Forward voltage Vf of Zener diode 16) = 6.6V. Power supply terminal V
Different power supply circuits (not shown) are connected to the power supply terminal Vc2 and the power supply terminal Vc2, respectively.
c1 and Vcc2 are given.

【0014】上記構成の作用を説明する。電源電圧Vc
c1,Vcc2がそれぞれ電源端子Vc1−グランド
間,電源端子Vc2−グランド間に与えられると、NO
Tゲート12,15及びCMOSインバータ13,14
が動作する。
The operation of the above configuration will be described. Power supply voltage Vc
When c1 and Vcc2 are applied between the power supply terminal Vc1-ground and between the power supply terminal Vc2-ground, respectively, NO
T gates 12, 15 and CMOS inverters 13, 14
Works.

【0015】そして、スタンバイ状態とする場合、電源
端子Vc1に電源電圧Vcc1(=3V)の電源を供給
したままで電源端子Vc2には非給電とする。
In the standby state, the power supply terminal Vc1 is not supplied with power while the power supply voltage Vcc1 (= 3V) is still supplied to the power supply terminal Vc1.

【0016】このとき、NOTゲート12の入力として
グランドレベル(電圧0V)が入力されると、NOTゲ
ート12により出力端子12aの電圧はVcc1[V]
となり、CMOSインバータ14の入力端子14aはグ
ランドレベルに一致する。このとき、電源電圧Vcc2
が電源端子Vc2に供給されていないため、CMOSイ
ンバータ14は動作しない。
At this time, when the ground level (voltage 0V) is input as the input of the NOT gate 12, the voltage of the output terminal 12a is Vcc1 [V] by the NOT gate 12.
Therefore, the input terminal 14a of the CMOS inverter 14 matches the ground level. At this time, the power supply voltage Vcc2
Is not supplied to the power supply terminal Vc2, the CMOS inverter 14 does not operate.

【0017】そして、NOTゲート12の入力として電
圧Vcc1[V]が入力されると、NOTゲート12に
より出力端子12aはグランドレベルとなり、CMOS
インバータ14の入力端子14aの電圧は略Vcc1
[V]となる。
When the voltage Vcc1 [V] is input as the input of the NOT gate 12, the output terminal 12a becomes the ground level by the NOT gate 12, and the CMOS
The voltage of the input terminal 14a of the inverter 14 is approximately Vcc1.
[V].

【0018】このとき、CMOSインバータ14の入力
端子14aの電位と第2の電源端子Vc2の電位との間
の電位差(=3V)が6.6V以上とはならないため、
CMOSインバータ14の入力端子14aから電源端子
Vc2に電源が供給されることはない。すなわち、電源
端子Vc2に接続されるNOTゲート15に対して電源
が供給されないため、スタンバイ状態が保持される。
At this time, the potential difference (= 3V) between the potential of the input terminal 14a of the CMOS inverter 14 and the potential of the second power supply terminal Vc2 does not exceed 6.6V.
No power is supplied from the input terminal 14a of the CMOS inverter 14 to the power supply terminal Vc2. That is, since the NOT gate 15 connected to the power supply terminal Vc2 is not supplied with power, the standby state is maintained.

【0019】一方、電源端子Vc1から静電気等のサー
ジ電圧が印加された場合、そのサージ電圧が6.6V以
上となると、この電圧でクランプされ、サージ電圧によ
る電流は電源端子Vc2側の図示しない電源回路等に導
かれサージ電圧を逃がすことができる。このとき、MO
Sトランジスタ14b,14cのゲートが保護される。
On the other hand, when a surge voltage such as static electricity is applied from the power supply terminal Vc1 and the surge voltage becomes 6.6 V or more, it is clamped by this voltage, and the current due to the surge voltage is not shown in the power supply terminal Vc2 side. The surge voltage can be released by being guided to a circuit or the like. At this time, MO
The gates of the S transistors 14b and 14c are protected.

【0020】このような実施形態によれば、CMOSイ
ンバータ14の入力端子14aがVcc1(=3V)と
なったときの電源端子Vc2との間の電圧が6.6V
(ツェナー電圧Vz+順方向電圧Vf)以上とはならな
いように設定されているので、CMOSインバータ14
の入力端子14aから電源端子Vc2に電圧が供給され
ず、スタンバイ状態を保持しながら消費電流を低減でき
る。
According to this embodiment, the voltage between the input terminal 14a of the CMOS inverter 14 and the power supply terminal Vc2 when the input terminal 14a becomes Vcc1 (= 3V) is 6.6V.
Since it is set so as not to exceed (Zener voltage Vz + Forward voltage Vf), the CMOS inverter 14
Since no voltage is supplied from the input terminal 14a to the power supply terminal Vc2, the current consumption can be reduced while maintaining the standby state.

【0021】また、電源端子Vc1から静電気等のサー
ジ電圧が印加された場合、そのサージ電圧が6.6V以
上となると導通状態となり、サージ電圧による電流は電
源端子Vc1から電源端子Vc2に導かれるようにして
いるので、サージ電圧によるCMOSインバータ14の
ゲートの破壊を防止することができる。また、2つのツ
ェナーダイオード16,17を用いているので、構成を
複雑化することがない。
When a surge voltage such as static electricity is applied from the power supply terminal Vc1, it becomes conductive when the surge voltage becomes 6.6 V or more, and the current due to the surge voltage is guided from the power supply terminal Vc1 to the power supply terminal Vc2. Therefore, it is possible to prevent the gate of the CMOS inverter 14 from being destroyed by the surge voltage. Further, since the two Zener diodes 16 and 17 are used, the structure is not complicated.

【0022】尚、電源端子Vc1と電源端子Vc2とに
掛けられる電源電圧は同じでも異なっていても良い。
The power supply voltage applied to the power supply terminal Vc1 and the power supply terminal Vc2 may be the same or different.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施形態を示す電気的構成図FIG. 1 is an electrical configuration diagram showing an embodiment of the present invention.

【図2】従来例を示す図1相当図FIG. 2 is a view corresponding to FIG. 1 showing a conventional example.

【符号の説明】[Explanation of symbols]

11はインターフェイス回路、12,13はNOTゲー
ト、14はCMOSインバータ(第1のCMOSインバ
ータ)、15はCMOSインバータ(第2のCMOSイ
ンバータ)、16,17はツェナーダイオード、18は
電圧制限手段,Vc1は第1の電源端子、Vc2は第2
の電源端子である。
11 is an interface circuit, 12 and 13 are NOT gates, 14 is a CMOS inverter (first CMOS inverter), 15 is a CMOS inverter (second CMOS inverter), 16 and 17 are zener diodes, 18 is a voltage limiting means, Vc1 Is the first power supply terminal, Vc2 is the second
Power supply terminal.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 第1の電源端子から給電される第1のC
MOSインバータと、 第2の電源端子から給電され前記第1のCMOSインバ
ータの出力端子に入力端子が接続された第2のCMOS
インバータと、 この第2のCMOSインバータの入力端子と前記第2の
電源端子との間に、当該第2の電源端子に対する前記入
力端子の電圧が所定レベル以上となると導通状態となる
ように接続された電圧制限手段とを備えたことを特徴と
するインターフェイス回路。
1. A first C fed from a first power supply terminal
A MOS inverter and a second CMOS which is supplied with power from a second power supply terminal and whose input terminal is connected to the output terminal of the first CMOS inverter.
An inverter is connected between the input terminal of the second CMOS inverter and the second power supply terminal so as to be in a conductive state when the voltage of the input terminal with respect to the second power supply terminal becomes a predetermined level or higher. An interface circuit including a voltage limiting means.
【請求項2】 前記電圧制限手段は、逆方向に直列接続
されてなる2つのツェナーダイオードであることを特徴
とする請求項1記載のインターフェイス回路。
2. The interface circuit according to claim 1, wherein the voltage limiting means is two Zener diodes connected in series in opposite directions.
JP2001221453A 2001-07-23 2001-07-23 Interface circuit Expired - Fee Related JP4449264B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001221453A JP4449264B2 (en) 2001-07-23 2001-07-23 Interface circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001221453A JP4449264B2 (en) 2001-07-23 2001-07-23 Interface circuit

Publications (2)

Publication Number Publication Date
JP2003037493A true JP2003037493A (en) 2003-02-07
JP4449264B2 JP4449264B2 (en) 2010-04-14

Family

ID=19055118

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP4449264B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005041375A2 (en) * 2003-10-21 2005-05-06 Austriamicrosystems Ag Active protection circuit arrangement
JP2007142423A (en) * 2005-11-15 2007-06-07 Magnachip Semiconductor Ltd Esd protection circuit
JP2011155497A (en) * 2010-01-27 2011-08-11 Tokai Rika Co Ltd Level shift circuit
CN103515939A (en) * 2012-06-21 2014-01-15 德克萨斯仪器德国股份有限公司 Electrostatic discharge protection circuit
JP6297758B1 (en) * 2015-01-27 2018-03-20 クゥアルコム・インコーポレイテッドQualcomm Incorporated Self-detection type reverse current protection switch

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005041375A2 (en) * 2003-10-21 2005-05-06 Austriamicrosystems Ag Active protection circuit arrangement
WO2005041375A3 (en) * 2003-10-21 2007-05-03 Austriamicrosystems Ag Active protection circuit arrangement
US7423855B2 (en) 2003-10-21 2008-09-09 Austriamicrosystems Ag Active protection circuit arrangement
KR101089469B1 (en) * 2003-10-21 2011-12-07 오스트리아마이크로시스템즈 아게 Active protection circuit arrangement
JP2007142423A (en) * 2005-11-15 2007-06-07 Magnachip Semiconductor Ltd Esd protection circuit
JP2011155497A (en) * 2010-01-27 2011-08-11 Tokai Rika Co Ltd Level shift circuit
CN103515939A (en) * 2012-06-21 2014-01-15 德克萨斯仪器德国股份有限公司 Electrostatic discharge protection circuit
US8830640B2 (en) * 2012-06-21 2014-09-09 Texas Instruments Deutschland Gmbh Electrostatic discharge protection circuit
JP6297758B1 (en) * 2015-01-27 2018-03-20 クゥアルコム・インコーポレイテッドQualcomm Incorporated Self-detection type reverse current protection switch

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