JP2003031531A - ウェーハ研磨装置及びウェーハ研磨方法 - Google Patents
ウェーハ研磨装置及びウェーハ研磨方法Info
- Publication number
- JP2003031531A JP2003031531A JP2002156237A JP2002156237A JP2003031531A JP 2003031531 A JP2003031531 A JP 2003031531A JP 2002156237 A JP2002156237 A JP 2002156237A JP 2002156237 A JP2002156237 A JP 2002156237A JP 2003031531 A JP2003031531 A JP 2003031531A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- region
- polishing
- membrane
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 204
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000012528 membrane Substances 0.000 claims abstract description 110
- 238000007517 polishing process Methods 0.000 claims description 23
- 238000005192 partition Methods 0.000 claims description 4
- 238000000638 solvent extraction Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 230000032258 transport Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 120
- 238000012986 modification Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 239000002002 slurry Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2001-30365 | 2001-05-31 | ||
KR10-2001-0030365A KR100437456B1 (ko) | 2001-05-31 | 2001-05-31 | 화학적 기계적 평탄화 기계의 폴리싱 헤드 및 그것을이용한 폴리싱방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003031531A true JP2003031531A (ja) | 2003-01-31 |
Family
ID=19710216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002156237A Pending JP2003031531A (ja) | 2001-05-31 | 2002-05-29 | ウェーハ研磨装置及びウェーハ研磨方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2003031531A (ko) |
KR (1) | KR100437456B1 (ko) |
DE (1) | DE10202701B4 (ko) |
TW (1) | TW520319B (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7166019B2 (en) | 2004-02-09 | 2007-01-23 | Samsung Electronics Co., Ltd. | Flexible membrane for a polishing head and chemical mechanical polishing (CMP) apparatus having the same |
US7727055B2 (en) | 2006-11-22 | 2010-06-01 | Applied Materials, Inc. | Flexible membrane for carrier head |
US8021215B2 (en) | 2006-11-22 | 2011-09-20 | Applied Materials, Inc. | Carrier head with retaining ring and carrier ring |
JP4833355B2 (ja) * | 2008-08-29 | 2011-12-07 | 信越半導体株式会社 | 研磨ヘッド及び研磨装置 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004070806A1 (en) * | 2003-02-10 | 2004-08-19 | Ebara Corporation | Substrate holding apparatus and polishing apparatus |
JP2009131920A (ja) * | 2007-11-29 | 2009-06-18 | Ebara Corp | 研磨装置及び方法 |
KR100954690B1 (ko) * | 2008-07-08 | 2010-04-27 | 주식회사 실트론 | 웨이퍼 가압헤드 |
US8460067B2 (en) * | 2009-05-14 | 2013-06-11 | Applied Materials, Inc. | Polishing head zone boundary smoothing |
KR102191916B1 (ko) * | 2013-06-26 | 2020-12-16 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드 |
US9662761B2 (en) * | 2013-12-02 | 2017-05-30 | Ebara Corporation | Polishing apparatus |
KR101613153B1 (ko) * | 2014-05-09 | 2016-04-19 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드의 멤브레인 및 이를 구비한 캐리어 헤드 |
US9873179B2 (en) * | 2016-01-20 | 2018-01-23 | Applied Materials, Inc. | Carrier for small pad for chemical mechanical polishing |
JP6575463B2 (ja) * | 2016-08-24 | 2019-09-18 | 信越半導体株式会社 | ウェーハの研磨方法 |
CN110142689B (zh) * | 2019-04-17 | 2021-09-14 | 杭州众硅电子科技有限公司 | 一种晶圆装载支架、晶圆装载系统及晶圆装片方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10235554A (ja) * | 1997-02-25 | 1998-09-08 | Speedfam Co Ltd | 研磨装置のヘッド |
US5957751A (en) * | 1997-05-23 | 1999-09-28 | Applied Materials, Inc. | Carrier head with a substrate detection mechanism for a chemical mechanical polishing system |
DE69813374T2 (de) * | 1997-05-28 | 2003-10-23 | Tokyo Seimitsu Co Ltd | Halbleiterscheibe Poliervorrichtung mit Halterring |
US5964653A (en) * | 1997-07-11 | 1999-10-12 | Applied Materials, Inc. | Carrier head with a flexible membrane for a chemical mechanical polishing system |
JPH11226865A (ja) * | 1997-12-11 | 1999-08-24 | Speedfam Co Ltd | キャリア及びcmp装置 |
US6422927B1 (en) * | 1998-12-30 | 2002-07-23 | Applied Materials, Inc. | Carrier head with controllable pressure and loading area for chemical mechanical polishing |
JP3068086B1 (ja) * | 1999-05-07 | 2000-07-24 | 株式会社東京精密 | ウェ―ハ研磨装置 |
JP2001121411A (ja) * | 1999-10-29 | 2001-05-08 | Applied Materials Inc | ウェハー研磨装置 |
US6652362B2 (en) * | 2000-11-23 | 2003-11-25 | Samsung Electronics Co., Ltd. | Apparatus for polishing a semiconductor wafer and method therefor |
-
2001
- 2001-05-31 KR KR10-2001-0030365A patent/KR100437456B1/ko not_active IP Right Cessation
- 2001-10-22 TW TW090126052A patent/TW520319B/zh not_active IP Right Cessation
-
2002
- 2002-01-24 DE DE10202701A patent/DE10202701B4/de not_active Expired - Lifetime
- 2002-05-29 JP JP2002156237A patent/JP2003031531A/ja active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7166019B2 (en) | 2004-02-09 | 2007-01-23 | Samsung Electronics Co., Ltd. | Flexible membrane for a polishing head and chemical mechanical polishing (CMP) apparatus having the same |
US7727055B2 (en) | 2006-11-22 | 2010-06-01 | Applied Materials, Inc. | Flexible membrane for carrier head |
US8021215B2 (en) | 2006-11-22 | 2011-09-20 | Applied Materials, Inc. | Carrier head with retaining ring and carrier ring |
JP4833355B2 (ja) * | 2008-08-29 | 2011-12-07 | 信越半導体株式会社 | 研磨ヘッド及び研磨装置 |
US8636561B2 (en) | 2008-08-29 | 2014-01-28 | Shin-Etsu Handotai Co., Ltd. | Polishing head and polishing apparatus |
Also Published As
Publication number | Publication date |
---|---|
DE10202701A1 (de) | 2002-12-12 |
DE10202701B4 (de) | 2006-05-18 |
KR100437456B1 (ko) | 2004-06-23 |
TW520319B (en) | 2003-02-11 |
KR20020091325A (ko) | 2002-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6945861B2 (en) | Polishing head of chemical mechanical polishing apparatus and polishing method using the same | |
JP4217400B2 (ja) | ウェーハ研磨装置及びウェーハ研磨方法 | |
US6390905B1 (en) | Workpiece carrier with adjustable pressure zones and barriers | |
US6056632A (en) | Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head | |
KR100939555B1 (ko) | 기판 유지 장치 | |
JP2003031531A (ja) | ウェーハ研磨装置及びウェーハ研磨方法 | |
US6494774B1 (en) | Carrier head with pressure transfer mechanism | |
US6746318B2 (en) | Workpiece carrier with adjustable pressure zones and barriers | |
TW201914750A (zh) | 拋光盤基座、拋光盤、拋光機以及最終拋光方法 | |
KR100636455B1 (ko) | 화학 기계적 연마를 위한 제어가능한 압력 및 부하 영역을갖는 캐리어 헤드 | |
US6758726B2 (en) | Partial-membrane carrier head | |
US20080014842A1 (en) | Polishing head for polishing semiconductor wafers | |
KR100423909B1 (ko) | 화학적 기계적 평탄화 기계의 폴리싱 헤드 및 그것을이용한 폴리싱방법 | |
US6336853B1 (en) | Carrier having pistons for distributing a pressing force on the back surface of a workpiece | |
US7018273B1 (en) | Platen with diaphragm and method for optimizing wafer polishing | |
KR20030045269A (ko) | 폴리싱 헤드가 구비된 화학기계적 연마장치 | |
KR20030059638A (ko) | 폴리싱 헤드가 구비된 화학기계적 연마장치 | |
KR20030077802A (ko) | 폴리싱 헤드를 갖는 화학기계적 연마장비 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050311 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080123 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080423 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080428 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080630 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20081219 |