JP2003017634A - Semiconductor module - Google Patents
Semiconductor moduleInfo
- Publication number
- JP2003017634A JP2003017634A JP2001196411A JP2001196411A JP2003017634A JP 2003017634 A JP2003017634 A JP 2003017634A JP 2001196411 A JP2001196411 A JP 2001196411A JP 2001196411 A JP2001196411 A JP 2001196411A JP 2003017634 A JP2003017634 A JP 2003017634A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- semiconductor
- heat conductive
- semiconductor module
- thin plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体モジュール
に関し、特に、簡単な構造で高い放熱効率を有する半導
体モジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor module, and more particularly to a semiconductor module having a simple structure and high heat dissipation efficiency.
【０００２】[0002]
【従来の技術】図３は、全体が２００で示される、従来
の半導体モジュールの組み立て図であり、図４は、図３
に示す半導体モジュール２００の、Ｂ−Ｂ方向の断面図
である。図３に示すように、半導体モジュール２００は
プリント基板１を含む。プリント基板１の上には、複数
の半導体部品２が実装されている。半導体部品２は、集
積回路素子等からなり、半導体部品２の種類によってそ
の高さが異なっている。また、プリント基板１には、リ
ベット３、４を通すための取り付け孔５が設けられてい
る。更に、半導体モジュール２００は、熱導電性シート
６と、例えばアルミニウムからなる放熱板７とを含む。2. Description of the Related Art FIG. 3 is an assembly view of a conventional semiconductor module, generally designated by 200, and FIG.
4 is a cross-sectional view of the semiconductor module 200 shown in FIG. As shown in FIG. 3, the semiconductor module 200 includes the printed circuit board 1. A plurality of semiconductor components 2 are mounted on the printed board 1. The semiconductor component 2 is composed of an integrated circuit element or the like, and its height differs depending on the type of the semiconductor component 2. Further, the printed board 1 is provided with mounting holes 5 for passing the rivets 3 and 4. Further, the semiconductor module 200 includes the thermally conductive sheet 6 and the heat dissipation plate 7 made of, for example, aluminum.
【０００３】図４に示すように、半導体モジュール２０
０では、プリント基板１に実装された半導体部品２の上
に熱導電性シート６が載置され、更に、半導体部品２と
熱導電性シート６とを覆うように、キャップ状の放熱板
７がプリント基板１上に設けられる。熱導電性シート６
は、半導体部品２と放熱板７との双方に接する。また、
プリント基板と放熱板７とは、取り付け孔５を通したリ
ベット３、４で固定される（図３参照）。As shown in FIG. 4, the semiconductor module 20
In No. 0, the thermally conductive sheet 6 is placed on the semiconductor component 2 mounted on the printed circuit board 1, and the cap-shaped heat dissipation plate 7 is further provided so as to cover the semiconductor component 2 and the thermally conductive sheet 6. It is provided on the printed circuit board 1. Thermal conductive sheet 6
Contacts both the semiconductor component 2 and the heat sink 7. Also,
The printed circuit board and the heat sink 7 are fixed by the rivets 3 and 4 that pass through the mounting holes 5 (see FIG. 3).
【０００４】なお、特開昭６１−４７６５３号公報に、
薄膜金属キャップを用いたマルチモジュールが記載され
ている。しかし、かかるマルチモジュールは、冷却水を
用いてモジュールの冷却を行うものであり、空冷方式の
上記半導体モジュールと異なって冷却構造が複雑とな
る。また、マルチモジュールは、後述のような高さの異
なる半導体部品を効果的に冷却することを意図するもの
ではない。Incidentally, Japanese Patent Laid-Open No. 61-47653 discloses that
Multi-modules using thin film metal caps are described. However, such a multi-module cools the module by using cooling water, and has a complicated cooling structure, unlike the air-cooled semiconductor module. Further, the multi-module is not intended to effectively cool semiconductor components having different heights as described later.
【０００５】[0005]
【発明が解決しようとする課題】しかし、熱導電性シー
ト６には、比較的剛性が高いシリコン樹脂等が用いられ
る。このため、図４に示すように、高さの異なる半導体
部品２がプリント基板１に実装されている場合には、熱
導電性シート６と接しない半導体部品２が発生する。こ
の結果、半導体部品２からの放熱が不充分となり、誤動
作等を生じる原因となる。However, the heat conductive sheet 6 is made of silicon resin or the like having a relatively high rigidity. For this reason, as shown in FIG. 4, when the semiconductor components 2 having different heights are mounted on the printed circuit board 1, some semiconductor components 2 do not come into contact with the thermally conductive sheet 6. As a result, the heat radiation from the semiconductor component 2 becomes insufficient, which causes malfunctions and the like.
【０００６】かかる場合に、熱導電性シート６の厚さを
半導体部品２の高さに合わせて設計することも考えられ
るが、プリント基板１に実装される半導体部品２が変更
される毎に熱導電性シート６を設計しなければならず、
製造コストが高くなる、製造工程が長くなる等の問題が
ある。In such a case, it is conceivable to design the thickness of the thermally conductive sheet 6 to match the height of the semiconductor component 2. However, heat is applied every time the semiconductor component 2 mounted on the printed board 1 is changed. The conductive sheet 6 has to be designed,
There are problems such as an increase in manufacturing cost and an increase in manufacturing process.
【０００７】そこで、本発明は、簡単な構造で高い放熱
効率を有する半導体モジュールを提供することを目的と
する。Therefore, an object of the present invention is to provide a semiconductor module having a simple structure and high heat dissipation efficiency.
【０００８】[0008]
【課題を解決するための手段】本発明は、放熱板を有す
る半導体モジュールであって、基板と、該基板に実装さ
れた半導体部品と、該半導体部品上に配置された熱伝導
性シートと、該熱伝導性シートに接して該熱伝導性シー
ト上に配置された放熱板とを含み、更に、該半導体部品
と該熱伝導性シートとの間に、該半導体部品と該熱伝導
性シートとの双方に接する熱伝導性薄板を設けたことを
特徴とする半導体モジュールである。かかる熱伝導性薄
板を設けることにより、半導体部品から放出された熱
を、熱伝導性薄板を介して放熱板に移動させることがで
きる。このため、半導体部品を効率的に冷却でき、半導
体部品の誤動作等を防止できる。SUMMARY OF THE INVENTION The present invention is a semiconductor module having a heat sink, a substrate, a semiconductor component mounted on the substrate, and a heat conductive sheet arranged on the semiconductor component. A heat dissipation plate disposed on the heat conductive sheet in contact with the heat conductive sheet; and between the semiconductor component and the heat conductive sheet, the semiconductor component and the heat conductive sheet. And a heat conductive thin plate that is in contact with both sides of the semiconductor module. By providing such a heat conductive thin plate, heat emitted from the semiconductor component can be transferred to the heat dissipation plate via the heat conductive thin plate. Therefore, the semiconductor component can be cooled efficiently, and malfunction of the semiconductor component can be prevented.
【０００９】また、本発明は、上記半導体部品が、上記
基板からの高さの異なる複数の半導体部品からなり、上
記熱伝導性薄板が、それぞれの該半導体部品に接して配
置されたものである。かかる熱伝導性薄板を用いること
により、熱伝導性シートだけでは不充分であった高さの
小さな半導体部品に対しても十分に冷却を行うことがで
きる。Further, according to the present invention, the semiconductor component comprises a plurality of semiconductor components having different heights from the substrate, and the heat conductive thin plate is arranged in contact with each of the semiconductor components. . By using such a heat conductive thin plate, it is possible to sufficiently cool a semiconductor component having a small height, which was insufficient with the heat conductive sheet alone.
【００１０】上記熱伝導性薄板は、上記放熱板に接続さ
れたことが好ましい。熱伝導性薄板と放熱板とを直接接
続することにより、放熱効率が向上するからである。The heat conductive thin plate is preferably connected to the heat radiating plate. This is because the heat radiation efficiency is improved by directly connecting the heat conductive thin plate and the heat radiation plate.
【００１１】上記熱伝導性薄板は、アルミニウム又は銅
からなることが好ましい。The heat conductive thin plate is preferably made of aluminum or copper.
【００１２】上記熱伝導性薄板の厚さは、約０．０１ｍ
ｍ〜約０．０３ｍｍであることが好ましい。かかる厚さ
とすることにより、容易に加工することができる。The thickness of the heat conductive thin plate is about 0.01 m.
It is preferably from m to about 0.03 mm. With such a thickness, it can be easily processed.
【００１３】上記放熱板が上記半導体部品を覆うキャッ
プ形状であり、該放熱板が上記基板に固定されたもので
も良い。この他に、放熱板は、基板に固定されずに、熱
伝導性薄板、熱伝導性シートを介して半導体部品上に固
定されても良い。また、放熱板は放熱用フィンを備えて
も良い。The heat dissipation plate may have a cap shape for covering the semiconductor component, and the heat dissipation plate may be fixed to the substrate. In addition to this, the heat dissipation plate may not be fixed to the substrate but may be fixed to the semiconductor component via the heat conductive thin plate or the heat conductive sheet. Further, the heat dissipation plate may include heat dissipation fins.
【００１４】上記熱伝導性薄板の端部は、上記放熱板と
上記基板との間に挟まれて固定されたことが好ましい。It is preferable that an end portion of the heat conductive thin plate is sandwiched and fixed between the heat dissipation plate and the substrate.
【００１５】[0015]
【発明の実施の形態】図１は、全体が１００で表され
る、本実施の形態にかかる半導体モジュールの組み立て
図であり、図４は、図３のＡ−Ａ方向の断面図である。
図中、図３と同一符号は、同一又は相当箇所を示す。図
１に示すように、本実施の形態にかかる半導体モジュー
ル１００は、プリント基板１を含む。プリント基板１に
は、複数の半導体部品２が実装されている。半導体部品
２の間は、プリント基板１上に形成された配線層（図示
せず）により接続されている。半導体部品２は、例えば
集積回路素子等であり、種類によって高さが異なる。ま
た、プリント基板１の四隅には、リベット３、４を通す
取り付け孔５が設けられている。1 is an assembly view of a semiconductor module according to the present embodiment, which is generally designated by 100, and FIG. 4 is a sectional view taken along line AA of FIG.
In the figure, the same reference numerals as those in FIG. As shown in FIG. 1, the semiconductor module 100 according to the present embodiment includes a printed board 1. A plurality of semiconductor components 2 are mounted on the printed board 1. The semiconductor components 2 are connected by a wiring layer (not shown) formed on the printed board 1. The semiconductor component 2 is, for example, an integrated circuit element or the like, and its height differs depending on the type. Further, mounting holes 5 through which the rivets 3 and 4 pass are provided at four corners of the printed circuit board 1.
【００１６】また、半導体モジュール１００は、熱伝導
性薄板９を含む。熱伝導性薄膜９は、例えばアルミニウ
ム、銅等のような熱伝導性の高い材料が用いられる。熱
伝導性薄板９の厚さは、例えば、約０．０１ｍｍ〜約
０．０３ｍｍ程度であり、簡単に変形させることができ
る。The semiconductor module 100 also includes a heat conductive thin plate 9. The heat conductive thin film 9 is made of a material having high heat conductivity such as aluminum and copper. The heat conductive thin plate 9 has a thickness of, for example, about 0.01 mm to about 0.03 mm, and can be easily deformed.
【００１７】また、半導体モジュール１００は、熱伝導
性シート６を含む。熱伝導性シート６は、例えばシリコ
ン樹脂からなり、比較的剛性が高い。The semiconductor module 100 also includes a heat conductive sheet 6. The heat conductive sheet 6 is made of, for example, silicone resin and has relatively high rigidity.
【００１８】更に、半導体モジュール１００は、キャッ
プ形状の放熱板７を含む。放熱板７は、例えば銅からな
り、取り付け孔８を四隅に有する。放熱板７は、例えば
上面に放熱フィンを備えるものでも良い。Furthermore, the semiconductor module 100 includes a cap-shaped heat dissipation plate 7. The heat dissipation plate 7 is made of, for example, copper and has mounting holes 8 at four corners. The heat dissipation plate 7 may have, for example, a heat dissipation fin on the upper surface.
【００１９】図２は、組み立てた状態の半導体モジュー
ル１００の断面図である。プリント基板１上に、半導体
部品２がフリップチップボンディングされている。半導
体部品２の高さには、ばらつきがある。半導体装置２の
上には、熱伝導性薄板９が設けられている。上述のよう
に、熱伝導性薄板９は簡単に変形するような厚さであ
り、高さの異なる半導体部品２のそれぞれの上面に接す
るように変形させて、半導体部品２上に載置される。ま
た、熱伝導性薄板９の両端部は、プリント基板１と放熱
板７との間に挟まれて固定されている。FIG. 2 is a sectional view of the semiconductor module 100 in an assembled state. The semiconductor component 2 is flip-chip bonded onto the printed board 1. There are variations in the height of the semiconductor component 2. A heat conductive thin plate 9 is provided on the semiconductor device 2. As described above, the heat conductive thin plate 9 has such a thickness that it is easily deformed, is deformed so as to be in contact with the respective upper surfaces of the semiconductor components 2 having different heights, and is mounted on the semiconductor component 2. . Both ends of the heat conductive thin plate 9 are sandwiched and fixed between the printed board 1 and the heat dissipation plate 7.
【００２０】熱伝導性薄板９の上には、例えばシリコン
樹脂からなる熱伝導性シート６が設けられ、更に、放熱
板７が被せられている。熱伝導性シート６の厚さは、高
さの大きな半導体部品２上の熱伝導性シート６と、放熱
板７との双方に接するような厚さに設計されている。A heat conductive sheet 6 made of, for example, silicon resin is provided on the heat conductive thin plate 9, and a heat radiating plate 7 is further covered. The thickness of the heat conductive sheet 6 is designed to be in contact with both the heat conductive sheet 6 on the semiconductor component 2 having a large height and the heat dissipation plate 7.
【００２１】プリント基板１と放熱板７とは、熱伝導性
シート６を間に挟んだ状態で、取り付け孔を通るリベッ
ト３、４により接続されている。The printed circuit board 1 and the heat sink 7 are connected by rivets 3 and 4 passing through the mounting holes with the heat conductive sheet 6 sandwiched therebetween.
【００２２】このように、半導体モジュール１００で
は、高さの異なる半導体部品２の上面に熱伝導性薄板９
が接するように設けられている。このため、高さの小さ
い半導体部品２から放出された熱であっても、熱伝導性
薄板９を通って熱伝導性シート６に伝わり、更に放熱板
７から外部に放出される。従って、従来の半導体モジュ
ール２００のような、半導体部品２の昇温による誤動作
の発生を防止することができる。As described above, in the semiconductor module 100, the heat conductive thin plate 9 is provided on the upper surfaces of the semiconductor components 2 having different heights.
Are provided in contact with each other. Therefore, even the heat emitted from the semiconductor component 2 having a small height is transmitted to the heat conductive sheet 6 through the heat conductive thin plate 9 and further radiated to the outside from the heat dissipation plate 7. Therefore, unlike the conventional semiconductor module 200, it is possible to prevent the occurrence of malfunction due to the temperature rise of the semiconductor component 2.
【００２３】また、熱伝導性薄板９は、両端部でプリン
ト基板１と冷却板７との間に挟まれて固定されている。
このため、半導体部品２から熱伝導性薄板９に移動した
熱は、直接、冷却板７に伝わって外部に放出されること
となる。従って、半導体部品２の冷却効率を向上させる
ことができる。The heat conductive thin plate 9 is fixed by being sandwiched between the printed board 1 and the cooling plate 7 at both ends.
Therefore, the heat transferred from the semiconductor component 2 to the heat conductive thin plate 9 is directly transmitted to the cooling plate 7 and is released to the outside. Therefore, the cooling efficiency of the semiconductor component 2 can be improved.
【００２４】[0024]
【発明の効果】以上の説明から明らかなように、本発明
にかかる半導体モジュールでは、実装される半導体部品
の種類によらず、簡単な構造で半導体部品を効果的に冷
却することができ、半導体部品の誤動作を防止できる。As is apparent from the above description, in the semiconductor module according to the present invention, the semiconductor component can be effectively cooled with a simple structure regardless of the type of the semiconductor component to be mounted. It is possible to prevent malfunction of parts.
【図１】 本発明にかかる半導体モジュールの組み立て
図である。FIG. 1 is an assembly diagram of a semiconductor module according to the present invention.
【図２】 本発明にかかる半導体モジュールの断面図で
ある。FIG. 2 is a sectional view of a semiconductor module according to the present invention.
【図３】 従来の半導体モジュールの組み立て図であ
る。FIG. 3 is an assembly diagram of a conventional semiconductor module.
【図４】 従来の半導体モジュールの断面図である。FIG. 4 is a sectional view of a conventional semiconductor module.
１ プリント基板、２ 半導体部品、３、４ リベッ
ト、５ 取りつけ孔、６熱伝導性シート、７ 放熱板、
８ 取りつけ孔、９熱伝導性薄板、１００ 半導体モジ
ュール。1 printed circuit board, 2 semiconductor parts, 3, 4 rivets, 5 mounting holes, 6 thermal conductive sheet, 7 heat sink,
8 mounting holes, 9 heat conductive thin plate, 100 semiconductor module.
Claims (7)
て、 基板と、 該基板に実装された半導体部品と、 該半導体部品上に配置された熱伝導性シートと、 該熱伝導性シートに接して該熱伝導性シート上に配置さ
れた放熱板とを含み、 更に、該半導体部品と該熱伝導性シートとの間に、該半
導体部品と該熱伝導性シートとの双方に接する熱伝導性
薄板を設けたことを特徴とする半導体モジュール。1. A semiconductor module having a heat dissipation plate, a substrate, a semiconductor component mounted on the substrate, a heat conductive sheet disposed on the semiconductor component, and in contact with the heat conductive sheet. A heat-dissipating plate disposed on the heat-conducting sheet, and further between the semiconductor component and the heat-conducting sheet, the heat-conducting thin plate being in contact with both the semiconductor component and the heat-conducting sheet. A semiconductor module comprising:
の異なる複数の半導体部品からなり、 上記熱伝導性薄板が、それぞれの該半導体部品に接して
配置されたことを特徴とする請求項１に記載の半導体モ
ジュール。2. The semiconductor component comprises a plurality of semiconductor components having different heights from the substrate, and the heat conductive thin plate is arranged in contact with each of the semiconductor components. 1. The semiconductor module according to 1.
されてなることを特徴とする請求項１に記載の半導体モ
ジュール。3. The semiconductor module according to claim 1, wherein the heat conductive thin plate is connected to the heat dissipation plate.
銅からなることを特徴とする請求項１〜３のいずれかに
記載の半導体モジュール。4. The semiconductor module according to claim 1, wherein the heat conductive thin plate is made of aluminum or copper.
ｍｍ〜約０．０３ｍｍであることを特徴とする請求項１
〜３のいずれかに記載の半導体モジュール。5. The thickness of the heat conductive thin plate is about 0.01.
mm to about 0.03 mm.
The semiconductor module according to any one of 1 to 3.
ップ形状であり、該放熱板が上記基板に固定されてなる
ことを特徴とする請求項１に記載の半導体モジュール。6. The semiconductor module according to claim 1, wherein the heat dissipation plate has a cap shape that covers the semiconductor component, and the heat dissipation plate is fixed to the substrate.
と上記基板との間に挟まれて固定されたことを特徴とす
る請求項６に記載の半導体モジュール。7. The semiconductor module according to claim 6, wherein an end portion of the heat conductive thin plate is sandwiched and fixed between the heat dissipation plate and the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001196411A JP2003017634A (en) | 2001-06-28 | 2001-06-28 | Semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001196411A JP2003017634A (en) | 2001-06-28 | 2001-06-28 | Semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003017634A true JP2003017634A (en) | 2003-01-17 |
Family
ID=19034228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001196411A Pending JP2003017634A (en) | 2001-06-28 | 2001-06-28 | Semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003017634A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7307224B2 (en) | 2005-02-09 | 2007-12-11 | Elpida Memory, Inc. | Semiconductor device having a mount board |
| US7606035B2 (en) | 2006-09-22 | 2009-10-20 | Samsung Electronics Co., Ltd. | Heat sink and memory module using the same |
| US20110199734A1 (en) * | 2010-02-12 | 2011-08-18 | Noboru Nishida | Electronic apparatus |
-
2001
- 2001-06-28 JP JP2001196411A patent/JP2003017634A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7307224B2 (en) | 2005-02-09 | 2007-12-11 | Elpida Memory, Inc. | Semiconductor device having a mount board |
| US8071894B2 (en) | 2005-02-09 | 2011-12-06 | Elpida Memory, Inc. | Semiconductor device having a mount board |
| US7606035B2 (en) | 2006-09-22 | 2009-10-20 | Samsung Electronics Co., Ltd. | Heat sink and memory module using the same |
| US20110199734A1 (en) * | 2010-02-12 | 2011-08-18 | Noboru Nishida | Electronic apparatus |
| US8351210B2 (en) * | 2010-02-12 | 2013-01-08 | Kabushiki Kaisha Toshiba | Electronic apparatus |
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