JP2003013229A5 - - Google Patents
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- JP2003013229A5 JP2003013229A5 JP2001194386A JP2001194386A JP2003013229A5 JP 2003013229 A5 JP2003013229 A5 JP 2003013229A5 JP 2001194386 A JP2001194386 A JP 2001194386A JP 2001194386 A JP2001194386 A JP 2001194386A JP 2003013229 A5 JP2003013229 A5 JP 2003013229A5
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- JP
- Japan
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- vacuum chamber
- fine particles
- film forming
- source gas
- cvd film
- Prior art date
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Description
【特許請求の範囲】
【請求項１】
微粒子の表面全体に薄膜を成膜するＣＶＤ成膜装置であって、
微粒子を収容する真空チャンバーと、
この真空チャンバーを回転させる駆動機構と、
真空チャンバー内に原料ガスを導入する原料ガス導入機構と、
真空チャンバーに電力を供給する電力供給機構と、
を具備し、
上記駆動機構を用いて真空チャンバーを回転させることにより、真空チャンバー内の微粒子を動かしながら該微粒子の表面全体に薄膜を成膜することを特徴とするＣＶＤ成膜装置。
【請求項２】
上記真空チャンバーは円筒形状部を有しており、上記原料ガス導入機構における原料ガスの導入方向は、重力方向に対して真空チャンバーの回転方向に３０°以上９０°以下の方向であることを特徴とする請求項１に記載のＣＶＤ成膜装置。
【請求項３】
上記真空チャンバー内に配置され、接地電位に接続された内部電極をさらに含み、この内部電極は真空チャンバーの内径より小さい外径を有し、内部電極と真空チャンバーとの隙間がパッシェンの法則に基づいて成膜時の圧力から放電が発生しないように決定されており、内部電極は放電空間として作用する中空部を有すると共に開口部を有し、この中空部は該開口部を介して真空チャンバーの内面に繋げられていることを特徴とする請求項１に記載のＣＶＤ成膜装置。
【請求項４】
上記内部電極における中空部の内表面の面積が該中空部内から該開口部を通して見える真空チャンバーの内表面の面積に比べて大きいことを特徴とする請求項３に記載のＣＶＤ成膜装置。
【請求項５】
上記内部電極における中空部の内表面には、該内部電極に薄膜が成膜されることを抑制する防着板が配置されていることを特徴とする請求項３又は４に記載のＣＶＤ成膜装置。
【請求項６】
上記防着板を所定温度に加熱する加熱部をさらに含むことを特徴とする請求項５に記載のＣＶＤ成膜装置。
【請求項７】
微粒子の表面全体に薄膜を成膜するＣＶＤ成膜方法であって、
真空チャンバー内にアース電極を配置し、
真空チャンバー内に微粒子を収容し、
真空チャンバー内に原料ガスを供給し、
真空チャンバーを回転させることにより真空チャンバー内の微粒子を動かし、
真空チャンバーに電力を供給し、アース電極と真空チャンバーの間に原料ガス系プラズマを発生させることにより、微粒子の表面全体に薄膜を成膜することを特徴とするＣＶＤ成膜方法。
【請求項８】
表面全体にＤＬＣ膜が成膜されたことを特徴とする微粒子。
【請求項９】
請求項８において、前記微粒子の粒径は１０μｍ以下であることを特徴とする微粒子。
【請求項１０】
請求項８又は９において、前記ＤＬＣ膜は、真空チャンバー内にアース電極を配置し、前記真空チャンバー内に前記微粒子を収容し、前記真空チャンバー内に原料ガスを供給し、前記真空チャンバーを回転させることにより前記真空チャンバー内の前記微粒子を動かし、前記真空チャンバーに電力を供給し、前記アース電極と前記真空チャンバーの間に原料ガス系プラズマを発生させることにより、前記微粒子の表面全体に成膜されたものであることを特徴とする微粒子。
[Claims]
(1)
A CVD film forming apparatus for forming a thin film on the entire surface of fine particles,
A vacuum chamber containing fine particles,
A drive mechanism for rotating the vacuum chamber,
A source gas introduction mechanism for introducing the source gas into the vacuum chamber,
A power supply mechanism for supplying power to the vacuum chamber,
With
A CVD film forming apparatus characterized in that a thin film is formed on the entire surface of the fine particles while moving the fine particles in the vacuum chamber by rotating the vacuum chamber using the driving mechanism.
(2)
The vacuum chamber has a cylindrical portion, and the direction of introduction of the source gas in the source gas introduction mechanism is 30 ° or more and 90 ° or less in the direction of rotation of the vacuum chamber with respect to the direction of gravity. The CVD film forming apparatus according to claim 1.
(3)
The plasma processing apparatus further includes an inner electrode disposed in the vacuum chamber and connected to a ground potential, the inner electrode having an outer diameter smaller than the inner diameter of the vacuum chamber, and a gap between the inner electrode and the vacuum chamber being based on Paschen's law. The internal electrode has a hollow portion acting as a discharge space and has an opening, and the hollow portion is formed through the opening to form a vacuum chamber through the opening. The CVD film forming apparatus according to claim 1, wherein the CVD film forming apparatus is connected to an inner surface.
(4)
4. The CVD film forming apparatus according to claim 3, wherein the area of the inner surface of the hollow portion of the internal electrode is larger than the area of the inner surface of the vacuum chamber seen through the opening from inside the hollow portion.
(5)
5. The CVD film forming method according to claim 3, wherein a deposition-preventing plate for suppressing the formation of a thin film on the internal electrode is disposed on the inner surface of the hollow portion of the internal electrode. apparatus.
6.
6. The CVD film forming apparatus according to claim 5, further comprising a heating unit configured to heat the adhesion preventing plate to a predetermined temperature.
7.
A CVD film forming method for forming a thin film on the entire surface of the fine particles,
Arrange the ground electrode in the vacuum chamber,
The particles are stored in the vacuum chamber,
Supply the source gas into the vacuum chamber,
Move the particles in the vacuum chamber by rotating the vacuum chamber,
A CVD film forming method characterized in that a thin film is formed on the entire surface of fine particles by supplying electric power to a vacuum chamber and generating a source gas plasma between an earth electrode and the vacuum chamber.
8.
Fine particles having a DLC film formed on the entire surface.
9.
9. The fine particle according to claim 8, wherein the particle diameter of the fine particle is 10 μm or less.
10.
10. The DLC film according to claim 8, wherein an earth electrode is disposed in a vacuum chamber, the fine particles are stored in the vacuum chamber, a source gas is supplied into the vacuum chamber, and the vacuum chamber is rotated. By moving the fine particles in the vacuum chamber, by supplying power to the vacuum chamber, to generate a source gas plasma between the ground electrode and the vacuum chamber, a film is formed on the entire surface of the fine particles Particles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001194386A JP4388717B2 (en) | 2001-06-27 | 2001-06-27 | CVD film forming apparatus and CVD film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001194386A JP4388717B2 (en) | 2001-06-27 | 2001-06-27 | CVD film forming apparatus and CVD film forming method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009180938A Division JP5277442B2 (en) | 2009-08-03 | 2009-08-03 | Fine particles |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003013229A JP2003013229A (en) | 2003-01-15 |
| JP2003013229A5 true JP2003013229A5 (en) | 2008-03-21 |
| JP4388717B2 JP4388717B2 (en) | 2009-12-24 |
Family
ID=19032528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001194386A Expired - Fee Related JP4388717B2 (en) | 2001-06-27 | 2001-06-27 | CVD film forming apparatus and CVD film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4388717B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1696984A (en) * | 2004-05-14 | 2005-11-16 | 魏宗兴 | Method of anti embezzlement for new credit card |
| JP2006016661A (en) * | 2004-07-01 | 2006-01-19 | Utec:Kk | Coated-particulate, cvd system, cvd film deposition method, microcapsule and its production method |
| JP2006022176A (en) * | 2004-07-07 | 2006-01-26 | Takayuki Abe | Coated microparticle |
| JP4750436B2 (en) * | 2005-03-16 | 2011-08-17 | 孝之 阿部 | Manufacturing method of surface treatment product, surface treatment method and surface treatment apparatus |
| WO2006115242A1 (en) * | 2005-04-25 | 2006-11-02 | Youtec Co., Ltd. | Surface-treated fine particle, surface-treating apparatus, and method for surface-treating fine particle |
| US10125421B2 (en) | 2008-02-06 | 2018-11-13 | Advanced Material Technologies, Inc. | Plasma CVD apparatus, plasma CVD method, and agitating device |
| JP6496898B2 (en) * | 2014-07-02 | 2019-04-10 | アドバンストマテリアルテクノロジーズ株式会社 | Manufacturing method of electronic parts |
| JP7093555B2 (en) * | 2016-05-12 | 2022-06-30 | 株式会社ユーパテンター | Lubricants and methods for manufacturing them, lubricant supplies, lubricant aerosols, members with lubricants, and methods for manufacturing movable members with lubricants. |
| EP3778471B1 (en) * | 2016-07-15 | 2022-04-20 | OneD Material, Inc. | Manufacturing method for making silicon nanowires on carbon based powders for use in batteries |
| KR102194067B1 (en) * | 2018-01-25 | 2020-12-22 | 주식회사 모만 | Powder and fiber uniform coating apparatus |
| WO2021167067A1 (en) * | 2020-02-21 | 2021-08-26 | 株式会社ユーパテンター | Composite device and method for manufacturing coated fine particles |
-
2001
- 2001-06-27 JP JP2001194386A patent/JP4388717B2/en not_active Expired - Fee Related
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