WO2021167067A1

WO2021167067A1 - Composite device and method for manufacturing coated fine particles

Info

Publication number: WO2021167067A1
Application number: PCT/JP2021/006365
Authority: WO
Inventors: 本多　祐二
Original assignee: 株式会社ユーパテンター
Priority date: 2020-02-21
Filing date: 2021-02-19
Publication date: 2021-08-26
Also published as: JPWO2021167067A1

Abstract

[Problem] To provide a composite device capable of preventing fine particles or electronic components from being exposed to the atmosphere during treatment when both plasma CVD treatment and sputtering treatment are performed. [Solution] The present invention provides a composite device comprising: an exhaust mechanism 13 that vacuum exhausts the inside of a chamber 12; a container 15 that accommodates fine particles 14 and has an internal shape of a polygonal, circular or elliptical cross section; an operation mechanism 16 that rotates or oscillates the container about a rotation axis perpendicular to the cross section; a first electrode 19 that holds a first sputtering target 18a; a moving mechanism that rotates the first electrode to move the position of the first sputtering target; a gas introduction part that introduces at least one gas of an inert gas, an oxygen gas, a fluorine gas, and a raw material gas into the container; a first supply mechanism that supplies power or a ground potential to the first electrode; and a second supply mechanism that supplies a ground potential or power to the container.

Description

Method for manufacturing composite device and coated fine particles

The present invention relates to a composite device and a method for producing coated fine particles.

Patent Document 1 discloses a polygonal barrel sputtering apparatus that coats the surface of fine particles with a sputtering film by sputtering. Further, Patent Document 2 discloses a plasma CVD apparatus that coats a CVD film on the surface of fine particles by a plasma CVD method.

For example, when a metal film such as Cu is formed on the surface of fine particles made of plastic and then _{an oxide film such as SiO 2 is formed} on the metal film, first, the fine particles are subjected to the above-mentioned polygonal barrel sputtering apparatus. A metal film is formed on the surface by sputtering, and the fine particles on which the metal film is formed are taken out from a polygonal barrel sputtering apparatus, the taken out fine particles are introduced into a plasma CVD apparatus, and an oxide film is formed on the metal film by a plasma CVD method. It is necessary to form a film. When the fine particles having the metal film formed in this way are taken out from the polygonal barrel sputtering apparatus, the metal film is exposed to the atmosphere, and the metal film is oxidized. As a result, even if an oxide film is formed on the metal film by the plasma CVD method, the film quality of the metal film is deteriorated. Therefore, the performance of the finally obtained oxide film and the fine particles on which the metal film is formed is formed. May decrease.

Japanese Unexamined Patent Publication No. 2004-250771 Japanese Unexamined Patent Publication No. 2006-16661

One aspect of the present invention is a composite device or a composite device for preventing the fine particles or electronic components from being exposed to the atmosphere during the processing when both the sputtering treatment and the plasma CVD treatment are performed on the fine particles or electronic components. An object of the present invention is to provide the coated fine particles.
In addition, another aspect of the present invention is a composite that prevents the fine particles or electronic parts from being exposed to the atmosphere during the treatment when both the surface modification treatment and the sputtering treatment are performed on the fine particles or electronic parts. The subject is to provide the device.

Hereinafter, various aspects of the present invention will be described.
[1] Chamber and
An exhaust mechanism that evacuates the inside of the chamber and
A container arranged in the chamber and containing fine particles or electronic parts and having an internal shape of a polygonal, circular or elliptical cross section.
An operating mechanism that rotates or pendulums the container about the direction perpendicular to the cross section as a rotation axis.
A first electrode located in the container and holding a first sputtering target,
A gas introduction unit that introduces at least one of an inert gas, an oxygen gas, a nitrogen gas, a fluorine gas, and a raw material gas into the container.
A first supply mechanism that supplies electric power or ground potential to the first electrode,
A second supply mechanism that supplies the earth potential or power to the container,
A complex device characterized by comprising.

[2] In the above [1],
The first supply mechanism is the plasma power source or ground that is electrically connected to the first electrode via a first switch.
The second supply mechanism is a composite device comprising being an earth or plasma power source electrically connected to the container via a second switch.

[3] In the above [1] or [2],
Having a moving mechanism for rotating the first electrode to move the position of the first sputtering target in order to position the first sputtering target held by the first electrode upward or downward. A complex device characterized by.

[4] In the above [1] or [2],
Has a control unit
The control unit rotates or pendulums the container using the operation mechanism to perform sputtering while stirring or rotating the fine particles or the electronic component in the container, thereby producing the fine particles or the electronic component. After adhering the fine particles or ultrafine particles having a diameter smaller than that of the electronic component or forming a thin film,
By rotating or pendulum the container using the operating mechanism to perform the plasma CVD method while stirring or rotating the fine particles or the electronic component in the container, the fine particles or the electronic component can be subjected to the fine particles or the electronic component. A composite device characterized in that ultrafine particles having a diameter smaller than that of the electronic component are adhered or controlled so as to form a thin film.

[5] In the above [1] or [2],
Has a control unit
The control unit performs a plasma CVD method while stirring or rotating the fine particles or electronic components in the container by rotating or pendulum the container using the operation mechanism, thereby causing the fine particles or the electrons. After adhering the fine particles or ultrafine particles having a diameter smaller than that of the electronic component to the component or forming a thin film,
Sputtering is performed while stirring or rotating the fine particles or the electronic component in the container by rotating or pendulum the container using the operation mechanism, so that the fine particles or the electronic component are subjected to the fine particles or the electrons. A composite device characterized in that ultrafine particles having a diameter smaller than that of a component are adhered or controlled so as to form a thin film.

[6] In the above [3],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located below, and rotates the container using the operating mechanism. Alternatively, by performing sputtering while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component. A composite device characterized by controlling to form a thin film.

[7] In the above [3],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and rotates the container using the operating mechanism. Alternatively, by performing a plasma CVD method while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or the electronic component are provided with ultrafine particles having a diameter smaller than that of the fine particles or the electronic component. A composite device characterized in that it is controlled so as to adhere or form a thin film.

[8] In the above [3],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the first sputtering target and the container A composite device characterized in that the first sputtering target is controlled to be corrected by performing sputtering between the two.

[9] In the above [3],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the inert gas and oxygen gas are contained in the container. , Nitrogen gas and fluorine gas are introduced, and the container is rotated or pendulum-operated by using the operating mechanism to stir or rotate the fine particles or the electronic parts in the container, and at least one of the above. A composite device characterized in that the surface of the fine particles or the electronic component is controlled to be modified by generating a plasma of one gas.

[10] In the above [3],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located below, and rotates the container using the operating mechanism. Alternatively, by performing sputtering while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component. After forming a thin film,
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the container is rotated or pendulum-operated by using the moving mechanism. By performing the plasma CVD method while stirring or rotating the fine particles or the electronic component in the container, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component or a thin film is formed. A composite device characterized in that it is controlled to form a film.

[11] In the above [3],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and rotates the container using the operating mechanism. Alternatively, by performing a plasma CVD method while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or the electronic component are provided with ultrafine particles having a diameter smaller than that of the fine particles or the electronic component. After adhesion or thin film formation
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below, and the container is rotated or pendulum-operated by using the moving mechanism. By performing sputtering while stirring or rotating the fine particles or the electronic component in the container, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component or a thin film is formed. A complex device characterized in that it is controlled in such a manner.

[12] In the above [3],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the inert gas and oxygen gas are contained in the container. , Nitrogen gas and fluorine gas are introduced, and the container is rotated or pendulum-operated by using the operating mechanism to stir or rotate the fine particles or the electronic parts in the container, and at least one of the above. After modifying the surface of the fine particles or the electronic components by generating a plasma of one gas,
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below, and the container is rotated or pendulum-operated by using the moving mechanism. By performing sputtering while stirring or rotating the fine particles or the electronic component in the container, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component or a thin film is formed. A complex device characterized in that it is controlled in such a manner.

[13] Chamber and
An exhaust mechanism that evacuates the inside of the chamber and
A container arranged in the chamber and containing fine particles or electronic parts and having an internal shape of a polygonal, circular or elliptical cross section.
An operating mechanism that rotates or pendulums the container about the direction perpendicular to the cross section as a rotation axis.
A first electrode located in the container and holding a first sputtering target,
A second electrode located in the container and holding a second sputtering target,
The first and second electrodes are used to position the first sputtering target held by the first electrode and the second sputtering target held by the second electrode above or below, respectively. To move the positions of the first sputtering target and the second sputtering target by rotating the moving mechanism, and
A gas introduction unit that introduces at least one of an inert gas, an oxygen gas, a nitrogen gas, a fluorine gas, and a raw material gas into the container.
A first supply mechanism that supplies electric power or ground potential to the first electrode,
A second supply mechanism that supplies electric power or ground potential to the second electrode,
A third supply mechanism that supplies the earth potential or power to the container,
A complex device characterized by comprising.

[13-1] In the above [13],
A third electrode located in the container and holding a third sputtering target,
A third supply mechanism that supplies electric power or ground potential to the third electrode, and
Have,
The moving mechanism is a composite device characterized in that the third electrode is rotated to move the position of the third sputtering target.

[13-2] In the above [13-1],
A fourth electrode arranged in the container and holding a fourth sputtering target,
A fourth supply mechanism that supplies electric power or ground potential to the fourth electrode, and
Have,
The moving mechanism is a composite device characterized in that the fourth electrode is rotated to move the position of the fourth sputtering target.

[14] In the above [13],
The first supply mechanism is the plasma power supply or ground that is electrically connected to the first electrode via a first switch and a third switch.
The second supply mechanism is the plasma power supply or ground that is electrically connected to the second electrode via a first switch and a third switch.
The third supply mechanism is a composite device comprising being an earth or plasma power source electrically connected to the container via a second switch.

[15] In the above [13] or [14],
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located below, and rotates the container using the operating mechanism. Alternatively, by performing sputtering while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or the electronic component is subjected to sputtering, so that the fine particles or the electronic component has a smaller diameter than the fine particles or the electronic component. After adhering or forming the first thin film
The second electrode is moved by the moving mechanism so that the second sputtering target held by the second electrode is located below, and the container is rotated or pendulum-operated by using the moving mechanism. By performing sputtering while stirring or rotating the fine particles or the electronic parts in the container, a second particle having a diameter smaller than that of the fine particles or the electronic parts is placed on the first ultrafine particles or the first thin film. A composite device characterized in that ultrafine particles are adhered or controlled so as to form a second thin film.

[16] In the above [15],
The control unit attaches the first ultrafine particles or forms the first thin film, and before adhering the second ultrafine particles or forming the second thin film. By introducing at least one gas of inert gas, oxygen gas, nitrogen gas and fluorine gas into the container and rotating or penduluming the container using the operation mechanism, the fine particles or the electronic component in the container A composite device characterized in that the surface of the first ultrafine particles or the first thin film is controlled to be modified by generating plasma of the at least one gas while stirring or rotating the gas.

[17] In the method for producing coated fine particles using the composite device according to the above [11],
Plastic fine particles are contained in the container, and
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located above.
By rotating or pendulum the container using the operation mechanism to perform the plasma CVD method while stirring or rotating the plastic fine particles in the container, a DLC film or Si _a C _bN _{c is applied to the plastic fine particles.} An _HD film is formed to form an HD film.
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below.
By rotating or pendulum the container using the operation mechanism to perform sputtering while stirring or rotating the plastic fine particles in the container, the DLC film or the Si _a C _b N _c _HD film can be obtained. A metal film is formed on top,
The a, b, c, and d are methods for producing coated fine particles, which satisfy the following formulas 1 to 4.
(Equation 1) 0.2 ≤ a ≤ 0.6
(Equation 2) 0.1 ≤ b ≤ 0.3
(Equation 3) 0.1 ≤ c ≤ 0.3
(Equation 4) 0.03 ≤ d ≤ 0.2

[18] In the method for producing coated fine particles using the composite device according to the above [11],
Plastic fine particles are contained in the container, and
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located above.
A DLC film is formed on the plastic fine particles by performing a plasma CVD method while stirring or rotating the plastic fine particles in the container by rotating or pendulum the container using the operation mechanism.
By performing the plasma CVD method while stirring or rolling the plastic particles in the container by rotating or pendulum operation the container using the operating mechanism, on the DLC film Si _a C _b N _c H _d A film is formed,
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below.
By performing sputtering while stirring or rolling the plastic particles in the container by rotating or pendulum operation the container using the operating mechanism, metal film on the Si _a C _b N _c H _d film Filmed,
The a, b, c, and d are methods for producing coated fine particles, which satisfy the following formulas 1 to 4.
(Equation 1) 0.2 ≤ a ≤ 0.6
(Equation 2) 0.1 ≤ b ≤ 0.3
(Equation 3) 0.1 ≤ c ≤ 0.3
(Equation 4) 0.03 ≤ d ≤ 0.2

According to one aspect of the present invention, when an ultrafine particle having a diameter smaller than that of the fine particle or the electronic component is attached to the fine particle or the electronic component or a thin film is formed by both the plasma CVD method and the sputtering method, the fine particle or the thin film is formed on the way. It is possible to provide a composite device for preventing electronic components from being exposed to the atmosphere or coated fine particles using the same.

Further, according to another aspect of the present invention, the fine particles or electronic parts are subjected to surface modification treatment, and the fine particles or electronic parts are sputtered to adhere ultrafine particles having a diameter smaller than that of the fine particles or electronic parts or a thin film. It is possible to provide a composite device for preventing the fine particles or electronic components after the surface modification treatment from being exposed to the atmosphere when the film is formed.

It is sectional drawing which shows typically the composite apparatus which concerns on one aspect of this invention. FIG. 5 is a cross-sectional view taken along the line 10-10 shown in FIG. It is sectional drawing which shows typically the composite apparatus which concerns on one aspect of this invention. It is sectional drawing which follows the line 20-20 shown in FIG. It is a coated fine particle according to one aspect of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below.

<Composite device>
FIG. 1 is a cross-sectional view schematically showing a composite device according to an aspect of the present invention. FIG. 2 is a cross-sectional view taken along the line 10-10 shown in FIG.

The composite device 11 shown in FIGS. 1 and 2 is a device having a combined function of a sputtering device, a plasma CVD device, and a surface modification processing device.

The composite device 11 has a chamber 12 and an exhaust mechanism 13 that evacuates the inside of the chamber 12. The exhaust mechanism 13 is composed of a vacuum pump or the like. In addition, a container 15 for accommodating fine particles 14 or electronic components is arranged in the chamber 12. As shown in FIG. 2, the container 15 has a polygonal internal shape in cross section. The container 15 can be pendulum-operated as shown by an arrow 17 by an operating mechanism 16 such as a motor with the direction perpendicular to the cross section shown in FIG. 2 as an axis.
In the present embodiment, the internal shape of the cross section of the container is polygonal, but the internal shape of the cross section of the container may be circular or elliptical. Further, the container may have a cylindrical shape or a conical shape.
Further, in the present embodiment, the container 15 is pendulum-operated by the operating mechanism 16, but the container 15 may be rotated by the operating mechanism 16.

A first electrode 19a holding the first sputtering target 18a and a second electrode 19b holding the second sputtering target 18b are arranged in the container 15. The state shown in FIGS. 1 and 2 is a state in which the first sputtering target 18a is positioned downward and the second sputtering target 18b is positioned upward. Further, in the present embodiment, each of the two sputtering targets is held by two electrodes, but three or more sputtering targets may be held by three or more electrodes.

Further, in the present specification, "positioning the sputtering target downward" does not mean only the gravity direction (directly below) 30 shown in FIGS. 1 and 2, but is a position tilted to the left and right by less than 45 ° from directly below. The meaning of "positioning the sputtering target above" does not mean only the opposite direction (directly above) of the gravity direction 30 shown in FIG. 1, but is tilted to the left and right by 45 ° or less from directly above. It means that the position is also included.

Further, the composite device 11 has a moving mechanism 21 that rotates the first and

second electrodes

19a and 19b to move the positions of the first and

second sputtering targets

18a and 18b, respectively. The moving mechanism 21 is composed of a motor or the like. The first and

second sputtering targets

18a and 18b held by the first and

second electrodes

19a and 19b by the moving mechanism 21 can be positioned above or below, respectively.

The gas introduction unit 23 for introducing the gas 22 into the container 15 has a gas introduction port located above the first and

second electrodes

19a and 19b and located in the container 15. The gas introduced into the container 15 is preferably at least one gas of an inert gas, an oxygen gas, a nitrogen gas, a fluorine gas and a raw material gas.

Further, the composite device 11 has a first supply mechanism for supplying electric power or a ground potential to the first electrode 19a, and the first supply mechanism has the first and third switches 25 to the first electrode 19a. , 28 is an electrically connected plasma power source 26 or ground. Further, the composite device 11 has a second supply mechanism for supplying electric power or a ground potential to the second electrode 19b, and the second supply mechanism has the first and third switches 25 to the second electrode 19b. , 28 is an electrically connected plasma power source 26 or ground. Further, the composite device 11 has a second supply mechanism for supplying the earth potential or electric power to the container 15, and the second supply mechanism is electrically connected to the container 15 via the second switch 27. Earth or plasma power supply 26. The plasma power supply 26 can be any one of a high frequency power supply for supplying high frequency power (RF output), a microwave power supply, a DC discharge power supply, and a pulse-modulated high frequency power supply, a microwave power supply, and a DC discharge power supply, respectively. It would be nice to have one.

In the composite device shown in FIG. 1, the plasma power supply by the first supply mechanism and the plasma power supply by the second supply mechanism are one plasma power supply 26, but the plasma power supply is provided to each of the first and second supply mechanisms. It may be arranged.

<Sputtering>
A method of performing a sputtering process on the fine particles 14 or electronic components by the composite device 11 shown in FIGS. 1 and 2 will be described.

The composite device 11 shown in FIG. 1 has a control unit 31, and the control unit 31 controls the composite device 11 so as to perform the following sputtering process.

The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a held by the first electrode 19a is located below, and the container 15 is rotated or pendulum-operated by using the moving mechanism 16. By performing sputtering while stirring or rotating the fine particles 14 or the electronic component in the container 15, ultrafine particles having a diameter smaller than that of the fine particle 14 or the electronic component are attached to the fine particle 14 or the electronic component or a thin film is formed.

This will be described in detail below.
The first electrode 19a holds the first sputtering target 18a. As the first sputtering target 18a, various materials can be used, and for example, metals such as Zn and Au can be used. Further, the fine particles 14 or electronic parts are housed in the container 15. Various materials can be used as the fine particles, and for example, plastic (for example, polyethylene, polystyrene, PMMA (acrylic), etc.) can be used. Next, the first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located below. Next, argon gas or nitrogen gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. The pressure in the chamber 12 at this time is, for example, about 1 Pa. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or the electronic components in the container 15 are stirred or rotated. Then, the plasma power supply 26 applies a high frequency voltage to the first electrode 19a via the first switch 25 and the third switch 28, and supplies the ground potential to the container 15 via the second switch 27. As a result, a high frequency is applied between the first sputtering target 18a and the container 15. By performing the sputtering treatment on the fine particles 14 or the electronic component in the container 15 in this way, the fine particles 14 or the electronic component can be attached with ultrafine particles having a diameter smaller than that of the fine particle 14 or the electronic component, or a thin film can be formed. can. That is, since the fine particles 14 or the electronic components are rolled by moving the container 15 with a pendulum, it is possible to easily uniformly cover the entire surface of the fine particles 14 or the electronic components with the sputtering film.

<Plasma CVD process>
A method of performing plasma CVD processing on the fine particles 14 or electronic components by the composite device 11 shown in FIGS. 3 and 4 will be described. The composite device 11 shown in FIGS. 3 and 4 differs from the composite device 11 shown in FIGS. 1 and 2 in that the first sputtering target 18a is positioned upward, but other than that. The same is true.

The composite device 11 shown in FIG. 3 has a control unit 31, and the control unit 31 controls the composite device 11 so as to perform the following plasma CVD process.

The first electrode 19a is moved by a moving mechanism so that the first sputtering target 18a is located above, and the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or electronic components in the container 15 are moved. By performing the plasma CVD method while stirring or rotating the particles, the fine particles or ultrafine particles having a diameter smaller than that of the electronic parts are adhered to the fine particles 14 or the electronic component, or a thin film is formed.

This will be described in detail below.
A plurality of fine particles 14 or electronic components are housed in the container 15. Further, the first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located above (see FIGS. 3 and 4). Next, the raw material gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. As the raw material gas, for example _{_{_{_{C 2 H 2, CH 4,}}}} C 7 H 8, CF 4, HMDS-N ( _{_{_{hexamethyldisilazane; C 6 H 19 NSi 2)}}} , the use of HMDS (hexamethyldisilazane) Can be done. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or the electronic components in the container 15 are stirred or rotated. As a result, the raw material gas is sprayed onto the fine particles 14 that are rolling and moving in the container 15, and the pressure (for example, about 20 Pa) suitable for film formation by the plasma CVD method is maintained by the balance between the controlled gas flow rate and the exhaust capacity. Dripping. This pressure is higher than the pressure during sputtering. Then, the plasma power supply 26 applies a high frequency voltage to the container 15 via the second switch 27, and supplies the ground potential to the first electrode 19a via the first switch 25 and the third switch 28. As a result, the plasma is ignited between the first electrode 19a and the container 15. As a result, plasma is generated in the container 15, and ultrafine particles adhere to the fine particles 14 or electronic components, or a thin film is formed. That is, since the fine particles 14 or the electronic components are rolled by moving the container 15 with a pendulum, it is easy to uniformly coat the _{entire surface of the fine particles 14 or the electronic components with a CVD film (for example, a SiO 2 film).}
In the above plasma CVD process, the ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28, so that the plasma is generated between the first electrode 19a and the container 15. Is ignited, but by supplying the ground potential to the second electrode 19b via the first switch 25 and the third switch 28, the plasma is ignited between the second electrode 19b and the container 15. May be good. In this case, the second electrode 19 may not hold the second sputtering target 18b. Alternatively, in a state where the first electrode 19a and the second electrode 19b are integrated into an electrode, the first sputtering target 18a is held by the electrode, and the first sputtering target 18a is positioned above. By supplying an earth potential to the electrode via a switch, plasma may be ignited between the electrode and the container 15.
Further, when the plasma CVD process is performed, sputtering does not occur from the first sputtering target 18a. The reason is that the ground is supplied to the first electrode 19a and the pressure inside the container 15 is higher than the pressure during the sputtering process.

<Pre-sputter processing (target correction processing, target cleaning)>
A method of pre-sputtering the fine particles 14 or electronic components by the composite device 11 shown in FIGS. 3 and 4 will be described. In the pre-sputtering process, when a CVD film adheres to the surface of the first sputtering target 18a by performing plasma CVD processing, the CVD film is removed from the surface of the first sputtering target 18a to bring it into a clean state. This is a correction process.

The composite device 11 shown in FIG. 3 has a control unit 31, and the control unit 31 controls the composite device 11 so as to perform the following pre-sputter processing.

The first sputtering target 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located above, and sputtering is performed between the first sputtering target 18a and the container 15. Clean 18a and correct it to a clean state.

This will be described in detail below.
The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located above (see FIGS. 3 and 4). Next, argon gas or nitrogen gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. The pressure in the chamber at this time is, for example, about 1 Pa. After that, a high frequency voltage is applied to the first electrode 19a via the first switch 25 and the third switch 28 by the plasma power supply 26, and the ground potential is supplied to the container 15 via the second switch 27 (the first). The first to

third switches

25, 27, and 28 are in the state shown in FIG. 1). As a result, a high frequency is applied between the first sputtering target 18a and the container 15. In this way, the first sputtering target 18a is reverse-sputtered, and the CVD film can be removed from the surface of the first sputtering target 18a. It is also possible to remove oxides, contamination and the like on the surface of the first sputtering target 18a.
Further, during the pre-sputtering process, since the first sputtering target 18a is located above, the sputter film is not formed on the fine particles 14 or the electronic components housed below the container 15.

<Surface modification treatment>
A method of surface-modifying the fine particles 14 or electronic components by the composite device 11 shown in FIGS. 3 and 4 will be described.

The composite device 11 shown in FIG. 3 has a control unit 31, and the control unit 31 controls the composite device 11 so as to perform the following surface modification treatment.

The first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located above, and at least one gas of argon gas, oxygen gas, nitrogen gas, fluorine gas and inert gas is moved into the container 15. By rotating or penduluming the container 15 using the operating mechanism 16 to generate the plasma of at least one gas while stirring or rotating the fine particles 14 or the electronic parts in the container 15, the fine particles 14 Alternatively, the surface of the electronic component is modified.

This will be described in detail below.
A plurality of fine particles 14 or electronic components are housed in the container 15. Further, the first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located above (see FIGS. 3 and 4). Next, at least one gas of argon gas, oxygen gas, nitrogen gas, fluorine gas and an inert gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or the electronic components in the container 15 are stirred or rotated. As a result, the inside of the container 15 is maintained at a pressure suitable for the surface modification treatment (for example, about 10 Pa) by the balance between the controlled gas flow rate and the exhaust capacity. This pressure is about halfway between the pressure during the plasma CVD treatment and the pressure during the sputtering treatment. Then, the plasma power supply 26 applies a high frequency voltage to the container 15 via the second switch 27, and supplies the ground potential to the first electrode 19a via the first switch 25 and the third switch 28. As a result, the plasma is ignited between the first electrode 19a and the container 15. As a result, plasma is generated in the container 15 to modify the surface of the fine particles 14 or the electronic component. Surface modification is, for example, oxidizing, nitriding or fluorinating the surface of fine particles 14 or electronic components. That is, since the fine particles 14 or the electronic components are rolled by moving the container 15 with a pendulum, the entire surface of the fine particles 14 or the electronic components can be easily modified.
In the above surface modification treatment, the ground potential is supplied to the first electrode 19a via the first switch 25 and the third switch 28, so that the ground potential is between the first electrode 19a and the container 15. The plasma is ignited, but by supplying the ground potential to the second electrode 19b via the first switch 25 and the third switch 28, the plasma is ignited between the second electrode 19b and the container 15. You may. In this case, the second electrode 19 may not hold the second sputtering target 18b. Alternatively, in a state where the first electrode 19a and the second electrode 19b are integrated into an electrode, the first sputtering target 18a is held by the electrode, and the first sputtering target 18a is positioned above. By supplying an earth potential to the electrode via a switch, plasma may be ignited between the electrode and the container 15.
Further, when the above surface modification treatment is performed, sputtering does not occur from the first sputtering target 18a. The reason is that the ground is supplied to the first electrode 19a and the pressure inside the container 15 is higher than the pressure during the sputtering process.

<1. Plasma CVD processing + sputtering processing and sputtering processing + plasma CVD processing>
First, the plasma CVD process described above is performed. After that, the above-mentioned sputtering treatment is continuously performed without taking out the fine particles 14 or the electronic components from the container 15. Between the plasma CVD process and the sputtering process, the position of the first sputtering target 18a is moved, the gas is switched, the pressure in the chamber 12 is adjusted, and the like.

As a specific example, a DLC (Diamond Like Carbon) film is formed on Cu fine particles by performing a plasma CVD treatment, and a Pt film is formed by performing a sputtering treatment on the DLC film. At this time, the following effects can be obtained.
(1) Oxidation of Cu fine particles can be suppressed or prevented by the DLC film.
(2) By performing the plasma CVD treatment, not only the DLC film is formed on the Cu fine particles, but also the inner surface of the container 15 is formed. Since the container 15 is made of a metal such as SUS, Cu fine particles having a small particle size easily adhere to the inner surface of the container 15, but when the inner surface of the container 15 is coated with a DLC film, the Cu fine particles are generated during the pendulum operation. It becomes slippery, can be suppressed from adhering to the inner surface of the container 15, and can also suppress the aggregation of Cu fine particles. As a result, the Pt film can be formed with good uniformity.

Further, after the sputtering treatment, the plasma CVD treatment may be continuously performed. In that case as well, it is advisable to move the position of the first sputtering target 18a, switch the gas, adjust the pressure in the chamber 12, and the like between the sputtering treatment and the plasma CVD treatment.
Further, the above-mentioned pre-sputtering treatment may be performed before the above-mentioned sputtering treatment.

When both the plasma CVD treatment and the sputtering treatment are performed, it is possible to prevent the fine particles 14 or the electronic components from being exposed to the atmosphere during the treatment.

<2. Sputtering + Plasma CVD processing>
Above <1. The difference from plasma CVD processing + sputtering processing and sputtering processing + plasma CVD processing> is that processing is performed without using a moving mechanism or by a device that eliminates the moving mechanism from the composite device. This will be described in detail below.

As shown in FIGS. 1 and 2, the first sputtering target 18a is held by the first electrode 19a so as to be located below. Further, the fine particles 14 or electronic parts are housed in the container 15. Next, argon gas or nitrogen gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. The pressure in the chamber 12 at this time is, for example, about 1 Pa. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16 to stir or rotate the fine particles 14 or the electronic components in the container 15. Then, the plasma power supply 26 applies a high frequency voltage to the first electrode 19a via the first switch 25 and the third switch 28, and supplies the ground potential to the container 15 via the second switch 27. As a result, a high frequency is applied between the first sputtering target 18a and the container 15 to perform sputtering, so that fine particles or ultrafine particles having a diameter smaller than that of the electronic component are adhered to the fine particles 14 or the electronic component or a thin film is formed. do.

After that, the raw material gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or the electronic components in the container 15 are stirred or rotated. As a result, the raw material gas is sprayed onto the fine particles 14 that are rolling and moving in the container 15, and the pressure (for example, about 20 Pa) suitable for film formation by the plasma CVD method is maintained by the balance between the controlled gas flow rate and the exhaust capacity. Dripping. Since this pressure is higher than the pressure during sputtering, sputtering does not occur. Then, the plasma power supply 26 applies a high frequency voltage to the container 15 via the second switch 27, and supplies the ground potential to the first electrode 19a via the first switch 25 and the third switch 28. As a result, the plasma is ignited between the first electrode 19a and the container 15. As a result, plasma is generated in the container 15, and ultrafine particles adhere to the fine particles 14 or electronic components, or a thin film is formed.

<2. Plasma CVD processing + sputtering processing>
Above <1. The difference from plasma CVD processing + sputtering processing and sputtering processing + plasma CVD processing> is that processing is performed without using a moving mechanism or by a device that eliminates the moving mechanism from the composite device. This will be described in detail below.

<2. In the sputtering process + plasma CVD process>, the plasma CVD process is continuously performed after the sputtering process, but in the reverse order of this, the plasma CVD process is performed and then the sputtering process is continuously performed. Hereinafter, a detailed description will be given.

As shown in FIGS. 1 and 2, the first sputtering target 18a is held by the first electrode 19a so as to be located below. Further, the fine particles 14 or electronic parts are housed in the container 15. Then, the above <2. By performing the plasma CVD process of sputtering process + plasma CVD process>, ultrafine particles adhere to the fine particles 14 or electronic components or a thin film is formed.

After that, argon gas or nitrogen gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow, and the above <2. By performing the sputtering treatment of sputtering treatment + plasma CVD treatment>, fine particles or ultrafine particles having a diameter smaller than that of the electronic parts are adhered to the fine particles 14 or the electronic parts, or a thin film is formed.

<Surface modification treatment + sputtering treatment>
First, the surface modification treatment described above is performed. After that, the above-mentioned sputtering treatment is continuously performed without taking out the fine particles 14 or the electronic components from the container 15. Between the surface modification treatment and the sputtering treatment, the position of the first sputtering target 18a is moved, the gas is switched, the pressure in the chamber 12 is adjusted, and the like.

Further, after the sputtering treatment, the surface modification treatment may be continuously performed. In that case as well, it is advisable to move the position of the first sputtering target 18a, switch the gas, adjust the pressure in the chamber 12, and the like between the sputtering treatment and the surface modification processing.

Further, the above-mentioned pre-sputtering treatment may be performed before the above-mentioned sputtering treatment.

When both the surface modification treatment and the sputtering treatment are performed, it is possible to prevent the fine particles 14 or the electronic components from being exposed to the atmosphere during the treatment. As a result, the quality of the fine particles or electronic components obtained after the treatment can be improved.

<Sputtering + Sputtering>
As shown in FIGS. 1 and 2, the first electrode 19a holds the first sputtering target 18a, and the second electrode 19b holds the second sputtering target 18b. In addition, fine particles or electronic parts are housed in the container 15. Next, the first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located below. Next, argon gas or nitrogen gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or the electronic components in the container 15 are stirred or rotated. Then, the plasma power supply 26 applies a high frequency voltage to the first electrode 19a via the first switch 25 and the third switch 28, and supplies the ground potential to the container 15 via the second switch 27. As a result, a high frequency is applied between the first sputtering target 18a and the container 15. By performing the sputtering treatment on the fine particles 14 or the electronic component in the container 15 in this way, the fine particles 14 or the electronic component is attached with the first ultrafine particles having a diameter smaller than that of the fine particles 14 or the electronic component, or the first thin film. Can be formed. That is, since the fine particles 14 or the electronic components are rolled by moving the container 15 with a pendulum, it is easy to uniformly cover the entire surface of the fine particles 14 or the electronic components with the first sputter film. The fine particles 14 at this time are, for example, SiO ₂ fine particles, and the first sputtered film is, for example, a Ti film.

Next, as shown in FIGS. 3 and 4, the second electrode 19b is moved by the moving mechanism 21 so that the second sputtering target 18b is located below. Next, argon gas or nitrogen gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or the electronic components in the container 15 are stirred or rotated. Then, the plasma power supply 26 applies a high frequency voltage to the second electrode 19b via the first switch 25 and the third switch 28, and supplies the ground potential to the container 15 via the second switch 27. As a result, a high frequency is applied between the second sputtering target 18b and the container 15. By performing the sputtering treatment on the fine particles 14 or the electronic component in the container 15 in this way, the fine particles 14 or the electronic component is attached with the second ultrafine particles having a diameter smaller than that of the fine particles 14 or the electronic component, or the second thin film. Can be formed. That is, since the fine particles 14 or the electronic components are rolled by moving the container 15 with a pendulum, it is easy to uniformly cover the entire surface of the fine particles 14 or the electronic components with the second sputter film. The second sputtered film at this time is, for example, a Cu film.

<Sputtering + Surface modification + Sputtering>
In the above <sputtering treatment + sputtering treatment>, the surface modification treatment is performed after the first sputtering film is formed and before the second sputtering film is formed. The details of the surface modification treatment are as follows. At least one gas of argon gas, oxygen gas, nitrogen gas, fluorine gas and an inert gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, the container 15 is rotated or pendulum-operated by using the operating mechanism 16, so that the fine particles 14 or the electronic components in the container 15 are stirred or rotated. As a result, the pressure inside the container 15 is maintained at a pressure suitable for the surface modification treatment by the balance between the controlled gas flow rate and the exhaust capacity. Then, the plasma power supply 26 applies a high frequency voltage to the container 15 via the second switch 27, and supplies the ground potential to the first electrode 19a via the first switch 25 and the third switch 28. As a result, the plasma is ignited between the first electrode 19a and the container 15. As a result, plasma is generated in the container 15 to modify the surface of the fine particles 14 or the electronic component. Surface modification is, for example, oxidizing, nitriding or fluorinating the surface of fine particles 14 or electronic components. That is, since the fine particles 14 or the electronic components are rolled by moving the container 15 with a pendulum, the entire surface of the fine particles 14 or the electronic components can be easily modified.

<1. Manufacturing method of coated fine particles>
The coated fine particles shown in FIG. 5 are produced by using the composite device 11 shown in FIGS. 3 and 4.
First, the first sputtering target 18a made of a metal such as Zn or Au is held on the first electrode 19a. Further, the fine particles 14 or electronic parts made of a plurality of plastics (for example, polyethylene, polystyrene, PMMA (acrylic)) are housed in the container 15. Further, the first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a is located above. Next, the raw material gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, by performing a plasma CVD method while stirring or rotating the fine particles 14 in the container 15 by pendulum-moving the container 15 using the operation mechanism 16, the DLC film 33 or Si _a C _b N _c H is formed on the fine particles 14. _A film is formed. Si _a C _b N _c H _d material gas when the film is deposited, for example _HMDS-N; using (hexamethyldisilazane C ₆ H 19 NSi ₂₎ or HMDS (hexamethyldisilazane).

Next, as shown in FIGS. 1 and 2, the first electrode 19a is moved by the moving mechanism 21 so that the first sputtering target 18a held by the first electrode 19a is located below, and the argon gas is gas. Alternatively, nitrogen gas is introduced into the container 15 from the gas introduction port of the gas introduction unit 23 as shown by an arrow. Next, the inside of the chamber 12 is depressurized using the exhaust mechanism 13. Then, by moving the container 15 with a pendulum using the operation mechanism 16 to perform sputtering while stirring or rotating the fine particles 14 in the container 15, the DLC film 33 or the Si _a C _b N _c _HD film is topped. A metal film 34 such as a Zn film or an Au film is formed. In addition, a, b, c, d may satisfy the following formulas 1 to 4.
(Equation 1) 0.2 ≤ a ≤ 0.6
(Equation 2) 0.1 ≤ b ≤ 0.3
(Equation 3) 0.1 ≤ c ≤ 0.3
(Equation 4) 0.03 ≤ d ≤ 0.2

According to the above method for producing coated fine particles, by forming the DLC film 33 on the fine particles 14 made of plastic, aggregation of the fine particles 14 can be suppressed as compared with the case where the metal film 34 is directly formed on the fine particles 14. That is, since the fine particles 14 made of plastic are easily aggregated, the metal film 34 cannot be formed uniformly on the fine particles 14, but the metal film 34 is formed after the DLC film 33 is formed on the fine particles 14, so that the fine particles 14 are formed. It is possible to form a metal film 34 with good uniformity.

Further, when the DLC film 33 is formed on the fine particles 14, the DLC film is also formed on the inner wall surface of the container 15, so that the fine particles 14 can be prevented from adsorbing on the wall surface of the container 15. As a result, the metal film 34 can be uniformly formed on the surface of the fine particles 14.

Further, when a Si _a C _b N _c _HD film is formed _{on the fine particles 14 and a metal film 34 is formed on the Si a} C _b N _c H _d film, the metal film 34 and the fine particles 14 are in close contact with each other. You can improve your sex. That is, it is difficult to directly forming a metal film 14 on the particulate 14 made of plastic, but by forming a metal film 34 after forming the _Si a _C b _N c _{H d} membrane particulates 14, from plastic The metal film 34 can be easily formed on the fine particles 14.

<2. Manufacturing method of coated fine particles>
First, the above <1. In the production method> In the same manner as the coated microparticles, the DLC film is formed microparticles 14 made of plastic, forming the _Si a _C b _N c _{H d} film on the DLC film.

Next, the above <1. In the production method> In the same manner as for coating fine _{_{_{_{particles, Si a C b N c H}}}} d film on the Zn film, a metal film Au film.

Also in the above method for producing coated fine particles, the above <1. The same effect as that of the method for producing coated fine particles> can be obtained.

Further, by arranging the _Si a _C b _N c _{H d} film between the DLC film and the metal film, it is possible to improve the adhesion between the DLC film and the metal film.

11 ... Composite device 12 ... Chamber 13 ... Exhaust mechanism 14 ... Fine particles 15 ... Container 16 ... Operating mechanism 17 ... Arrow 18a ... First sputtering target 18b ... Second sputtering target 19 ... Electrode 21 ... Moving mechanism 22 ... Gas 23 ... Gas inlet 25 ... 1st switch 26 ... Plasma power supply 27 ... 2nd switch 28 ... 3rd switch 30 ... Gravity direction (directly below)
31 ... Control unit 33 ... DLC film 34 ... Metal film

Claims

With the chamber
An exhaust mechanism that evacuates the inside of the chamber and
A container arranged in the chamber and containing fine particles or electronic parts and having an internal shape of a polygonal, circular or elliptical cross section.
An operating mechanism that rotates or pendulums the container about the direction perpendicular to the cross section as a rotation axis.
A first electrode located in the container and holding a first sputtering target,
A gas introduction unit that introduces at least one of an inert gas, an oxygen gas, a nitrogen gas, a fluorine gas, and a raw material gas into the container.
A first supply mechanism that supplies electric power or ground potential to the first electrode,
A second supply mechanism that supplies the earth potential or power to the container,
A complex device characterized by comprising.
In claim 1,
The first supply mechanism is the plasma power source or ground that is electrically connected to the first electrode via a first switch.
The second supply mechanism is a composite device comprising being an earth or plasma power source electrically connected to the container via a second switch.
In claim 1 or 2,
Having a moving mechanism for rotating the first electrode to move the position of the first sputtering target in order to position the first sputtering target held by the first electrode upward or downward. A complex device characterized by.
In claim 1 or 2,
Has a control unit
The control unit rotates or pendulums the container using the operation mechanism to perform sputtering while stirring or rotating the fine particles or the electronic component in the container, thereby producing the fine particles or the electronic component. After adhering the fine particles or ultrafine particles having a diameter smaller than that of the electronic component or forming a thin film,
By rotating or pendulum the container using the operating mechanism to perform the plasma CVD method while stirring or rotating the fine particles or the electronic component in the container, the fine particles or the electronic component can be subjected to the fine particles or the electronic component. A composite device characterized in that ultrafine particles having a diameter smaller than that of the electronic component are adhered or controlled so as to form a thin film.
In claim 1 or 2,
Has a control unit
The control unit performs a plasma CVD method while stirring or rotating the fine particles or electronic components in the container by rotating or pendulum the container using the operation mechanism, thereby causing the fine particles or the electrons. After adhering the fine particles or ultrafine particles having a diameter smaller than that of the electronic component to the component or forming a thin film,
Sputtering is performed while stirring or rotating the fine particles or the electronic component in the container by rotating or pendulum the container using the operation mechanism, so that the fine particles or the electronic component are subjected to the fine particles or the electrons. A composite device characterized in that ultrafine particles having a diameter smaller than that of a component are adhered or controlled so as to form a thin film.
In claim 3,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located below, and rotates the container using the operating mechanism. Alternatively, by performing sputtering while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component. A composite device characterized by controlling to form a thin film.
In claim 3,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and rotates the container using the operating mechanism. Alternatively, by performing a plasma CVD method while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or the electronic component are provided with ultrafine particles having a diameter smaller than that of the fine particles or the electronic component. A composite device characterized in that it is controlled so as to adhere or form a thin film.
In claim 3,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the first sputtering target and the container A composite device characterized in that the first sputtering target is controlled to be corrected by performing sputtering between the two.
In claim 3,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the inert gas and oxygen gas are contained in the container. , Nitrogen gas and fluorine gas are introduced, and the container is rotated or pendulum-operated by using the operating mechanism to stir or rotate the fine particles or the electronic parts in the container, and at least one of the above. A composite device characterized in that the surface of the fine particles or the electronic component is controlled to be modified by generating a plasma of one gas.
In claim 3,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located below, and rotates the container using the operating mechanism. Alternatively, by performing sputtering while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component. After forming a thin film,
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the container is rotated or pendulum-operated by using the moving mechanism. By performing the plasma CVD method while stirring or rotating the fine particles or the electronic component in the container, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component or a thin film is formed. A composite device characterized in that it is controlled to form a film.
In claim 3,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and rotates the container using the operating mechanism. Alternatively, by performing a plasma CVD method while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or the electronic component are provided with ultrafine particles having a diameter smaller than that of the fine particles or the electronic component. After adhesion or thin film formation
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below, and the container is rotated or pendulum-operated by using the moving mechanism. By performing sputtering while stirring or rotating the fine particles or the electronic component in the container, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component or a thin film is formed. A complex device characterized in that it is controlled in such a manner.
In claim 3,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located above, and the inert gas and oxygen gas are contained in the container. , Nitrogen gas and fluorine gas are introduced, and the container is rotated or pendulum-operated by using the operating mechanism to stir or rotate the fine particles or the electronic parts in the container, and at least one of the above. After modifying the surface of the fine particles or the electronic components by generating a plasma of one gas,
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below, and the container is rotated or pendulum-operated by using the moving mechanism. By performing sputtering while stirring or rotating the fine particles or the electronic component in the container, the fine particles or ultrafine particles having a diameter smaller than that of the electronic component are attached to the fine particles or the electronic component or a thin film is formed. A complex device characterized in that it is controlled in such a manner.
With the chamber
An exhaust mechanism that evacuates the inside of the chamber and
A container arranged in the chamber and containing fine particles or electronic parts and having an internal shape of a polygonal, circular or elliptical cross section.
An operating mechanism that rotates or pendulums the container about the direction perpendicular to the cross section as a rotation axis.
A first electrode located in the container and holding a first sputtering target,
A second electrode located in the container and holding a second sputtering target,
The first and second electrodes are used to position the first sputtering target held by the first electrode and the second sputtering target held by the second electrode above or below, respectively. To move the positions of the first sputtering target and the second sputtering target by rotating the moving mechanism, and
A gas introduction unit that introduces at least one of an inert gas, an oxygen gas, a nitrogen gas, a fluorine gas, and a raw material gas into the container.
A first supply mechanism that supplies electric power or ground potential to the first electrode,
A second supply mechanism that supplies electric power or ground potential to the second electrode,
A third supply mechanism that supplies the earth potential or power to the container,
A complex device characterized by comprising.
In claim 13,
The first supply mechanism is the plasma power supply or ground that is electrically connected to the first electrode via a first switch and a third switch.
The second supply mechanism is the plasma power supply or ground that is electrically connected to the second electrode via a first switch and a third switch.
The third supply mechanism is a composite device comprising being an earth or plasma power source electrically connected to the container via a second switch.
In claim 13 or 14,
Has a control unit
The control unit moves the first electrode by the moving mechanism so that the first sputtering target held by the first electrode is located below, and rotates the container using the operating mechanism. Alternatively, by performing sputtering while stirring or rotating the fine particles or the electronic component in the container by operating a pendulum, the fine particles or the electronic component is subjected to sputtering, so that the fine particles or the electronic component has a smaller diameter than the fine particles or the electronic component. After adhering or forming the first thin film
The second electrode is moved by the moving mechanism so that the second sputtering target held by the second electrode is located below, and the container is rotated or pendulum-operated by using the moving mechanism. By performing sputtering while stirring or rotating the fine particles or the electronic parts in the container, a second particle having a diameter smaller than that of the fine particles or the electronic parts is placed on the first ultrafine particles or the first thin film. A composite device characterized in that ultrafine particles are adhered or controlled so as to form a second thin film.
15.
The control unit attaches the first ultrafine particles or forms the first thin film, and before adhering the second ultrafine particles or forming the second thin film. By introducing at least one gas of inert gas, oxygen gas, nitrogen gas and fluorine gas into the container and rotating or penduluming the container using the operation mechanism, the fine particles or the electronic component in the container A composite device characterized in that the surface of the first ultrafine particles or the first thin film is controlled to be modified by generating plasma of the at least one gas while stirring or rotating the gas.
In the method for producing coated fine particles using the composite device according to claim 11.
Plastic fine particles are contained in the container, and
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located above.
By rotating or pendulum the container using the operating mechanism to perform the plasma CVD method while stirring or rotating the plastic fine particles in the container, a DLC film or Si a C bN c is applied to the plastic fine particles. An HD film is formed to form an HD film.
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below.
By rotating or pendulum the container using the operation mechanism to perform sputtering while stirring or rotating the plastic fine particles in the container, the DLC film or the Si a C b N c HD film can be obtained. A metal film is formed on top,
The a, b, c, and d are methods for producing coated fine particles, which satisfy the following formulas 1 to 4.
(Equation 1) 0.2 ≤ a ≤ 0.6
(Equation 2) 0.1 ≤ b ≤ 0.3
(Equation 3) 0.1 ≤ c ≤ 0.3
(Equation 4) 0.03 ≤ d ≤ 0.2
In the method for producing coated fine particles using the composite device according to claim 11.
Plastic fine particles are contained in the container, and
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located above.
A DLC film is formed on the plastic fine particles by performing a plasma CVD method while stirring or rotating the plastic fine particles in the container by rotating or pendulum the container using the operation mechanism.
By performing the plasma CVD method while stirring or rolling the plastic particles in the container by rotating or pendulum operation the container using the operating mechanism, on the DLC film Si a C b N c H d A film is formed,
The first electrode is moved by the moving mechanism so that the first sputtering target held by the first electrode is located below.
By performing sputtering while stirring or rolling the plastic particles in the container by rotating or pendulum operation the container using the operating mechanism, metal film on the Si a C b N c H d film Filmed,
The a, b, c, and d are methods for producing coated fine particles, which satisfy the following formulas 1 to 4.
(Equation 1) 0.2 ≤ a ≤ 0.6
(Equation 2) 0.1 ≤ b ≤ 0.3
(Equation 3) 0.1 ≤ c ≤ 0.3
(Equation 4) 0.03 ≤ d ≤ 0.2