JP2001234337A5 - - Google Patents

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Publication number
JP2001234337A5
JP2001234337A5 JP2000037942A JP2000037942A JP2001234337A5 JP 2001234337 A5 JP2001234337 A5 JP 2001234337A5 JP 2000037942 A JP2000037942 A JP 2000037942A JP 2000037942 A JP2000037942 A JP 2000037942A JP 2001234337 A5 JP2001234337 A5 JP 2001234337A5
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JP
Japan
Prior art keywords
electrode
substrate
vacuum chamber
holding table
substrate holding
Prior art date
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Pending
Application number
JP2000037942A
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Japanese (ja)
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JP2001234337A (en
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Publication date
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Priority to JP2000037942A priority Critical patent/JP2001234337A/en
Priority claimed from JP2000037942A external-priority patent/JP2001234337A/en
Publication of JP2001234337A publication Critical patent/JP2001234337A/en
Publication of JP2001234337A5 publication Critical patent/JP2001234337A5/ja
Pending legal-status Critical Current

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Claims (4)

真空室と、真空室内に配置され、かつターゲットを載置する電極と、電極に電力を印加する電源と、電極に対向して配置され、かつ基板を載置する基板保持台とを有するスパッタリング装置において、電極の周囲を取り囲むとともに基板保持台近傍まで延出させて配設されるチムニーに温度制御手段を設けたことを特徴とするスパッタリング装置。Sputtering apparatus having a vacuum chamber, an electrode disposed in the vacuum chamber and mounting a target, a power source for applying electric power to the electrode, and a substrate holding table disposed opposite to the electrode and mounting the substrate And a temperature control means is provided in the chimney that surrounds the electrode and extends to the vicinity of the substrate holding table . 温度制御手段は、チムニー内に形成された冷却流体通路と、冷却流体通路に冷却流体を供給する手段にて構成したことを特徴とする請求項１記載のスパッタリング装置。  2. The sputtering apparatus according to claim 1, wherein the temperature control means comprises a cooling fluid passage formed in the chimney and a means for supplying the cooling fluid to the cooling fluid passage. 真空室内で、電極に装着したターゲットから放出されるスパッタ粒子によりターゲットに対向して配置された基板表面に薄膜を生成する成膜方法において、成膜中に電極と基板近傍との間の周囲を取り囲むチムニーの温度を一定に保持することを特徴とする成膜方法。  In a film forming method for generating a thin film on a substrate surface arranged opposite to a target by sputtered particles emitted from a target mounted on an electrode in a vacuum chamber, the periphery between the electrode and the vicinity of the substrate is formed during film formation. A film forming method characterized in that the temperature of the surrounding chimney is kept constant. 真空室と、真空室内に配置され、かつターゲットを載置する電極と、電極に電力を印加する電源と、電極に対向して配置され、かつ基板を載置する基板保持台とを有するスパッタリング装置において、電極の周囲を取り囲むとともに基板保持台近傍まで延出させて配設される部材を有し、前記部材は基板保持台に対向する側に開口部を備え、かつ温度制御手段を設けられたことを特徴とするスパッタリング装置。Sputtering apparatus having a vacuum chamber, an electrode disposed in the vacuum chamber and mounting a target, a power source for applying electric power to the electrode, and a substrate holding table disposed opposite to the electrode and mounting the substrate And a member that surrounds the periphery of the electrode and extends to the vicinity of the substrate holding table, the member having an opening on the side facing the substrate holding table, and provided with temperature control means A sputtering apparatus characterized by that.
JP2000037942A 2000-02-16 2000-02-16 Sputtering system and film deposition method Pending JP2001234337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000037942A JP2001234337A (en) 2000-02-16 2000-02-16 Sputtering system and film deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000037942A JP2001234337A (en) 2000-02-16 2000-02-16 Sputtering system and film deposition method

Publications (2)

Publication Number Publication Date
JP2001234337A JP2001234337A (en) 2001-08-31
JP2001234337A5 true JP2001234337A5 (en) 2005-09-08

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ID=18561757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000037942A Pending JP2001234337A (en) 2000-02-16 2000-02-16 Sputtering system and film deposition method

Country Status (1)

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JP (1) JP2001234337A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6105114B1 (en) * 2016-03-14 2017-03-29 株式会社東芝 Film forming apparatus, sputtering apparatus, and collimator
CN111664823B (en) * 2020-05-25 2022-01-28 重庆大学 Method for detecting thickness of scale layer of voltage-sharing electrode based on difference of medium heat conduction coefficients
CN113846304B (en) * 2021-11-26 2022-02-11 北京航空航天大学 Target head, magnetron sputtering target gun and magnetron sputtering system

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