JP2003006587A - Manufacturing method for component on which semiconductor component is mounted, manufacturing method for finished product on which semiconductor component is mounted and finished product on which semiconductor component is mounted - Google Patents

Manufacturing method for component on which semiconductor component is mounted, manufacturing method for finished product on which semiconductor component is mounted and finished product on which semiconductor component is mounted

Info

Publication number
JP2003006587A
JP2003006587A JP2001184836A JP2001184836A JP2003006587A JP 2003006587 A JP2003006587 A JP 2003006587A JP 2001184836 A JP2001184836 A JP 2001184836A JP 2001184836 A JP2001184836 A JP 2001184836A JP 2003006587 A JP2003006587 A JP 2003006587A
Authority
JP
Japan
Prior art keywords
semiconductor component
component
base material
reinforcing member
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001184836A
Other languages
Japanese (ja)
Other versions
JP2003006587A5 (en
JP3881195B2 (en
Inventor
Norito Tsukahara
法人 塚原
Naoshi Akiguchi
尚士 秋口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001184836A priority Critical patent/JP3881195B2/en
Publication of JP2003006587A publication Critical patent/JP2003006587A/en
Publication of JP2003006587A5 publication Critical patent/JP2003006587A5/ja
Application granted granted Critical
Publication of JP3881195B2 publication Critical patent/JP3881195B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a component on which a semiconduc tor component is mounted with high quality and high productivity at a low cost, the manufacturing method of a finished product on which the semiconductor component is mounted and the finished product on which the semiconductor component is mounted. SOLUTION: After burying the semiconductor component 104 and a first semiconductor component reinforcing member 116 in a first thermoplastic resin base material 122, a circuit pattern 119 is formed and made into a module and thus, a finished component 101 on which the semiconductor component is mounted is composed of a flat outer surface. Also, since the burying processing is performed, the need of a conventional depression is eliminated and also the need of an adhesive material 7 for mounting the semiconductor component reinforcing member on the semiconductor component is eliminated. Thus, processes and costs regarding them are reduced, the productivity is improved and the costs are lowered.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体部品、及び
半導体部品の割れや欠けを防止する補強部材を基材に実
装して半導体部品実装済部品を製造する半導体部品実装
済部品の製造方法、該製造方法にて製造される半導体部
品実装済部品を有する半導体部品実装済完成品の製造方
法、及び該半導体部品実装済完成品製造方法にて製造さ
れる半導体部品実装済完成品に関する。上記半導体部品
実装済部品の製造方法は、例えば非接触ICカードを製
造する場合のように、アルミニウム、銅、ニッケル、導
電性ペースト、等にて形成された回路パターンにICチ
ップを電気的に接続する場合に使用される。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor component-mounted component manufacturing method for manufacturing a semiconductor component-mounted component by mounting a semiconductor component and a reinforcing member for preventing cracking or chipping of the semiconductor component on a base material. The present invention relates to a method for manufacturing a semiconductor component-mounted finished product having a semiconductor component mounted component manufactured by the manufacturing method, and a semiconductor component-mounted completed product manufactured by the semiconductor component mounted-finished product manufacturing method. In the method of manufacturing a semiconductor component-mounted component, an IC chip is electrically connected to a circuit pattern formed of aluminum, copper, nickel, a conductive paste, etc., as in the case of manufacturing a non-contact IC card, for example. Used when you want to.

【0002】[0002]

【従来の技術】非接触ICカードを例に取り、従来の半
導体部品実装済完成品の製造方法について、図28〜図
35を参照しながら以下に説明する。以前より、アンテ
ナコイルとICチップとを内蔵し、上記アンテナコイル
を介して外部とのデータの授与を行なう非接触ICカー
ドにおいて、非接触ICカード作製後に該非接触ICカ
ードに加わる、曲げ応力及びねじれ応力の少なくとも一
方に起因する上記ICチップの割れ及び欠け等の不良が
問題となっている。その対策として一般的には、非接触
ICカードを製造する際に、上記アンテナコイル等の回
路パターンを形成した基板に上記ICチップを実装した
後、当該実装したICチップの背面に、ステンレスや銅
箔等で形成された補強部材を接着剤にて貼り付け、IC
チップの割れ及び欠けを防止する方法が行われている。
2. Description of the Related Art Taking a non-contact IC card as an example, a conventional method for manufacturing a completed semiconductor component-mounted product will be described below with reference to FIGS. Conventionally, in a non-contact IC card that has an antenna coil and an IC chip built therein and gives data to the outside through the antenna coil, a bending stress and a twist applied to the non-contact IC card after the non-contact IC card is manufactured. Problems such as cracking and chipping of the IC chip due to at least one of the stresses have become a problem. As a countermeasure, generally, when manufacturing a non-contact IC card, after mounting the IC chip on a substrate on which a circuit pattern such as the antenna coil is formed, stainless steel or copper is mounted on the back surface of the mounted IC chip. Attach a reinforcing member made of foil etc. with an adhesive to
Methods are in place to prevent chip cracking and chipping.

【0003】図28〜図35は従来の非接触ICカード
及びその製造方法を示す。図28は、従来の非接触IC
カードにおける半導体部品補強部材が実装された半導体
部品実装済部品を示す。図28に示すように、従来の半
導体部品実装済部品1aは、ガラスエポキシ、ポリイミ
ド、ポリエチレンテレフタレート、塩化ビニル等の基板
1上の銅、アルミニウム等で形成されたアンテナ用コイ
ルパターン2を含む回路パターン6上に半導体部品3が
異方導電シート5もしくは異方導電性ぺ―スト5を介し
て電気的に接続されている。尚、4は、半導体部品3の
電極上にワイヤボンディング法やメッキ法、具体的には
半田、金、銀、銅等を用いたメッキ法により形成された
バンプである。補強部材15は、接着剤7を介して半導
体部品3の背面に貼り付けられた構成となっている。
28 to 35 show a conventional non-contact IC card and its manufacturing method. FIG. 28 shows a conventional non-contact IC
The semiconductor component mounted component in which the semiconductor component reinforcement member in the card was mounted is shown. As shown in FIG. 28, a conventional semiconductor component mounted component 1a is a circuit pattern including an antenna coil pattern 2 formed of copper, aluminum or the like on a substrate 1 of glass epoxy, polyimide, polyethylene terephthalate, vinyl chloride or the like. The semiconductor component 3 is electrically connected to the upper surface 6 through the anisotropic conductive sheet 5 or the anisotropic conductive paste 5. Reference numeral 4 denotes a bump formed on the electrode of the semiconductor component 3 by a wire bonding method or a plating method, specifically, a plating method using solder, gold, silver, copper or the like. The reinforcing member 15 is attached to the back surface of the semiconductor component 3 via the adhesive 7.

【0004】このような従来の非接触ICカードの製造
工程は、図29に示すように、まずステップ(図内では
「S」にて示す)1では、図30に示すように半導体部
品3の電極8上に、金線、銅線、アルミニウム線等を用
いたワイヤボンディング法やメッキ法、具体的には半
田、金、銀、銅等を用いたメッキ法により、バンプ4を
形成する。尚、9は半導体部品3のアクティブ面を保護
するパッシベーション膜である。ステップ2では、図3
1に示すようにガラスエポキシ、ポリイミド、ポリエチ
レンテレフタレート、塩化ビニル等で形成された基板1
に形成されている回路パターン6における半導体部品3
を実装すべき箇所に、異方導電性シート5を貼り付け仮
圧着する。該異方導電性シート5とは、金属粒子を含有
する樹脂シートであり、加熱及び加圧されることで上記
金属粒子を介して、バンプ4と回路パターン6とを電気
的に接続する。仮圧着条件は、一般的に100℃で5秒
加熱程度である。
The manufacturing process of such a conventional non-contact IC card is as shown in FIG. 29. First, in step (indicated by "S" in the figure) 1, as shown in FIG. The bumps 4 are formed on the electrodes 8 by a wire bonding method or a plating method using a gold wire, a copper wire, an aluminum wire or the like, specifically, a plating method using a solder, gold, silver, copper or the like. Reference numeral 9 is a passivation film that protects the active surface of the semiconductor component 3. In step 2, FIG.
Substrate 1 made of glass epoxy, polyimide, polyethylene terephthalate, vinyl chloride, etc. as shown in 1
The semiconductor component 3 in the circuit pattern 6 formed on the
The anisotropic conductive sheet 5 is attached to the place where is to be mounted, and is temporarily pressure-bonded. The anisotropic conductive sheet 5 is a resin sheet containing metal particles, and is electrically connected to the bumps 4 and the circuit pattern 6 via the metal particles by being heated and pressed. The temporary pressure bonding condition is generally heating at 100 ° C. for about 5 seconds.

【0005】ステップ3では、仮圧着した異方導電性シ
ート5に半導体部品3を載置する。ステップ4では、2
00℃の温度で30秒間、上記基板1及び半導体部品3
を加熱して、図32に示すように異方導電性シート5を
硬化させて、半導体素子3を基板1上に圧着する。その
結果、異方導電性シート5の硬化収縮力により、バンプ
3と回路パターン6とが異方導電性シート5の金属粒子
10を介して電気的に接続される。尚、半導体部品3に
対して補強部材6を配さない一般的な半導体実装におい
ては、このステップ4までで半導体素子の実装動作は完
了する。
In step 3, the semiconductor component 3 is placed on the anisotropically conductive sheet 5 that has been temporarily pressure-bonded. In step 4, 2
The substrate 1 and the semiconductor component 3 for 30 seconds at a temperature of 00 ° C.
Is heated to cure the anisotropic conductive sheet 5 as shown in FIG. 32, and the semiconductor element 3 is pressure-bonded onto the substrate 1. As a result, the curing shrinkage force of the anisotropic conductive sheet 5 electrically connects the bumps 3 and the circuit patterns 6 via the metal particles 10 of the anisotropic conductive sheet 5. Incidentally, in a general semiconductor mounting in which the reinforcing member 6 is not arranged on the semiconductor component 3, the mounting operation of the semiconductor element is completed by this step 4.

【0006】ステップ5では、図33に示すように、上
記電極8及びバンプ4の形成面に対向する半導体部品3
の背面3aにエポキシ系、アクリル系等の接着剤7を塗
布する。そして、ステップ6にて、半導体部品補強部材
15を上記背面3aに載置し、ステップ7で上記接着剤
7を硬化させることで、図28に示す半導体部品実装済
部品1aが完成する。尚、半導体部品補強部材15とし
ては、一般的に厚み50μm〜100μm程度のステン
レス、ニッケル、又は銅等の金属板が用いられる。ステ
ップ7以降、図34に示すように半導体部品実装済部品
1aを第1基材11、第2基材12、第3基材13に配
置し、ラミネート処理することにより、図35に示す半
導体部品実装済完成品としての非接触ICカード1bが
得られる。尚、図34において、第2基材12には予め
半導体部品実装済部品1aにおける半導体部品3及び半
導体部品補強部材15にて基板1上に形成される凸部に
起因する段差を吸収するために、くり抜き穴14が設け
てある。
In step 5, as shown in FIG. 33, the semiconductor component 3 facing the surface where the electrodes 8 and the bumps 4 are formed.
An adhesive 7 of epoxy type, acrylic type or the like is applied to the back surface 3a of the. Then, in step 6, the semiconductor component reinforcing member 15 is placed on the back surface 3a, and in step 7, the adhesive 7 is cured, whereby the semiconductor component mounted component 1a shown in FIG. 28 is completed. As the semiconductor component reinforcing member 15, a metal plate such as stainless steel, nickel, or copper having a thickness of about 50 μm to 100 μm is generally used. After step 7, the semiconductor component-mounted component 1a is placed on the first base material 11, the second base material 12, and the third base material 13 as shown in FIG. 34, and is laminated, whereby the semiconductor component shown in FIG. The non-contact IC card 1b is obtained as a mounted finished product. In FIG. 34, in order to absorb the step due to the convex portion formed on the substrate 1 by the semiconductor component 3 and the semiconductor component reinforcing member 15 in the semiconductor component mounted component 1a in advance on the second substrate 12, A hollow hole 14 is provided.

【0007】[0007]

【発明が解決しようとする課題】しかし、上述した従来
の半導体部品実装済完成品製造方法、及び該製造方法に
て製造される半導体部品実装済完成品としての非接触I
Cカードの構成では、以下の問題があった。上記半導体
部品実装済部品1aにおいては、半導体部品補強部材1
5を装着するための接着剤7が必要であり、その塗布及
び硬化の為の工程が必要となり、生産性が悪くなる。
又、接着剤7の材料費分コスト高になる。又、上記半導
体部品実装済部品1aにおいては、半導体部品3及び半
導体部品補強部材15にて基板1上に凸部が形成される
ため、図34に示すラミネート処理後、平坦な外表面に
てなる半導体部品実装済完成品1bを得ることが難し
い。従つて、図34に示すように第2基材12の一部に
は上記くり抜き穴14を設けているが、該くり抜き穴1
4を形成する為の工程が必要であり、生産性が悪く、コ
スト高となる。本発明はこのような問題点を解決する為
になされたもので、高品質、高生産性で安価な、半導体
部品実装済部品を製造する半導体部品実装済部品の製造
方法、該製造方法にて製造される半導体部品実装済部品
を有する半導体部品実装済完成品の製造方法、及び該半
導体部品実装済完成品製造方法にて製造される半導体部
品実装済完成品を提供することを目的とする。
However, the above-mentioned conventional method of manufacturing a completed semiconductor component mounted product, and non-contact I as a semiconductor component mounted completed product manufactured by the manufacturing method.
The C card configuration has the following problems. In the semiconductor component mounted component 1a, the semiconductor component reinforcing member 1 is used.
Adhesive 7 for mounting 5 is required, and steps for coating and curing the adhesive are required, resulting in poor productivity.
In addition, the material cost of the adhesive 7 is increased. Further, in the above-mentioned semiconductor component mounted component 1a, since the convex portion is formed on the substrate 1 by the semiconductor component 3 and the semiconductor component reinforcing member 15, it becomes a flat outer surface after the laminating process shown in FIG. It is difficult to obtain the completed semiconductor component mounted product 1b. Therefore, as shown in FIG. 34, the hollow hole 14 is provided in a part of the second base material 12.
4 is required, the productivity is poor and the cost is high. The present invention has been made to solve such a problem, and is a method for manufacturing a semiconductor component mounted component for manufacturing a high quality, high productivity and inexpensive semiconductor component mounted component, and the manufacturing method. An object of the present invention is to provide a method for manufacturing a semiconductor component-mounted finished product having a manufactured semiconductor component-mounted component, and a semiconductor component-mounted finished product manufactured by the semiconductor component-mounted finished product manufacturing method.

【0008】[0008]

【課題を解決するための手段】本発明の第1態様におけ
る、半導体部品実装済部品の製造方法は、半導体部品の
裏面に該半導体部品の補強を行う第1半導体部品補強部
材を接触させて設け、上記半導体部品及び上記第1半導
体部品補強部材が接触した状態にて、当該半導体部品及
び第1半導体部品補強部材と第1基材とを相対的に押圧
し、上記半導体部品及び上記第1半導体部品補強部材を
上記第1基材内へ埋設する、ことを特徴とする。
According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor component mounted component, wherein a first semiconductor component reinforcing member for reinforcing the semiconductor component is provided in contact with a back surface of the semiconductor component. , The semiconductor component and the first semiconductor component reinforcing member are in contact with each other, and the semiconductor component and the first semiconductor component reinforcing member are relatively pressed against the first base material, and the semiconductor component and the first semiconductor The component reinforcing member is embedded in the first base material.

【0009】又、上記埋設動作後、上記裏面に対向する
上記半導体部品のアクティブ面に形成されている電極部
が露出している上記第1基材の回路形成面に、導電性ペ
ースト又は金属メッキにて上記電極部に接触して回路パ
ターンを形成することもできる。
After the burying operation, a conductive paste or metal plating is applied to the circuit forming surface of the first base material where the electrode portion formed on the active surface of the semiconductor component facing the back surface is exposed. It is also possible to form a circuit pattern by contacting the electrode part.

【0010】さらに本発明の第2態様における、半導体
部品実装済部品の製造方法は、半導体部品と第1基材と
を相対的に押圧して上記半導体部品を上記第1基材内へ
埋設し、上記半導体部品の補強を行う第1半導体部品補
強部材が予め埋設された第2基材を、上記第1基材内に
埋設された上記半導体部品の裏面側であって上記半導体
部品と上記第1半導体部品補強部材とが重なるように配
置し、上記第1基材と上記第2基材とを接合し、上記接
合後、上記裏面に対向する上記半導体部品のアクティブ
面に形成されている電極部が露出している上記第1基材
の回路形成面に、導電性ペースト又は金属メッキにて上
記電極部に接触して回路パターンを形成する、ことを特
徴とする。
Further, according to the second aspect of the present invention, in the method for manufacturing a semiconductor component mounted component, the semiconductor component and the first base material are relatively pressed to embed the semiconductor component in the first base material. A second base material in which a first semiconductor component reinforcing member for reinforcing the semiconductor component is embedded in advance, the second base material being on the back surface side of the semiconductor component embedded in the first base material, 1 Semiconductor component reinforcing member is arranged so as to overlap, the first base material and the second base material are joined, and after the joining, an electrode formed on the active surface of the semiconductor component facing the back surface. A circuit pattern is formed by contacting the electrode portion with a conductive paste or metal plating on the circuit forming surface of the first base material where the portion is exposed.

【0011】又、本発明の第3態様の半導体部品実装済
部品は、上記第1態様又は第2態様の半導体部品実装済
部品の製造方法にて製造されたことを特徴とする。
A semiconductor component-mounted component according to a third aspect of the present invention is manufactured by the method for manufacturing a semiconductor component-mounted component according to the first or second aspect.

【0012】さらに本発明の第4態様の半導体部品実装
済完成品の製造方法は、上記第1態様又は第2態様の半
導体部品実装済部品の製造方法にて半導体部品実装済部
品を製造し、上記第1基材の厚み方向から第3基材及び
第4基材にて上記半導体部品実装済部品のラミネート処
理を行うことを特徴とする。
Further, a fourth aspect of the present invention is a method of manufacturing a completed semiconductor component-mounted product, wherein the semiconductor component-mounted component is manufactured by the method of manufacturing a semiconductor component-mounted component according to the first or second aspect. The third component and the fourth substrate are laminated from the thickness direction of the first substrate to the semiconductor component-mounted component.

【0013】上記第4態様の半導体部品実装済完成品の
製造方法において、上記第1基材の上記回路形成面側に
上記第4基材が配置されるとき、上記半導体部品に対向
して上記第4基材には予め第2半導体部品補強部材が埋
設されていてもよい。
In the method of manufacturing a completed semiconductor component-mounted product according to the fourth aspect, when the fourth base material is arranged on the circuit forming surface side of the first base material, the semiconductor component is opposed to the semiconductor component. The second semiconductor component reinforcing member may be embedded in advance in the fourth base material.

【0014】さらに本発明の第5態様の半導体部品実装
済完成品は、上記第4態様の半導体部品実装済完成品の
製造方法にて製造されたことを特徴とする。
Furthermore, the semiconductor component-mounted finished product of the fifth aspect of the present invention is manufactured by the method of manufacturing a semiconductor component-mounted finished product of the fourth aspect.

【0015】[0015]

【発明の実施の形態】本発明の実施形態である、半導体
部品実装済部品の製造方法、半導体部品実装済完成品の
製造方法、及び半導体部品実装済完成品について、図を
参照しながら以下に説明する。ここで、上記半導体部品
実装済完成品の製造方法は、上記半導体部品実装済部品
の製造方法にて製造された半導体部品実装済部品を有す
る半導体部品実装済完成品を製造する方法であり、及び
上記半導体部品実装済完成品は上記半導体部品実装済完
成品の製造方法にて製造されたものである。又、各図に
おいて同じ構成部分については同じ符号を付している。
上記「半導体部品実装済完成品」の機能を果たす一例とし
て、本実施形態では非接触ICカードを例にとるが、勿
論これに限定されるものではない。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention, a method for manufacturing a semiconductor component-mounted component, a method for manufacturing a semiconductor component-mounted component, and a semiconductor component-mounted component will be described below with reference to the drawings. explain. Here, the manufacturing method of the semiconductor component mounted finished product is a method of manufacturing a semiconductor component mounted finished product including the semiconductor component mounted component manufactured by the semiconductor component mounted component manufacturing method, and The semiconductor component-mounted finished product is manufactured by the method for manufacturing the semiconductor component-mounted completed product. Further, in each figure, the same components are designated by the same reference numerals.
A non-contact IC card is taken as an example in the present embodiment as an example of fulfilling the function of the "semiconductor component mounted completed product", but the present invention is not limited to this.

【0016】第1実施形態;図1は、本実施形態の半導
体部品実装済部品製造方法を用いて製造された半導体部
品実装済部品を示している。尚、上記半導体部品実装済
部品を半導体部品内蔵コアモジュール部品と記す場合も
ある。又、図1では、該半導体部品内蔵コアモジュール
部品の一例として、非接触ICカードを構成する半導体
部品内蔵コアモジュール部品101を示している。上記
非接触ICカードにおける半導体部品内蔵コアモジュー
ル部品101において、半導体部品104及び第1半導
体部品補強部材116は、予め第1熱可塑性樹脂基材1
22に埋め込まれ、該第1熱可塑性樹脂基材122の、
回路形成面に相当する回路パターン形成面123には、
上記半導体部品104のバンプ113の電極露出面11
5が露出している。このような回路パターン形成面12
3には、上記電極露出面115と電気的に接触する電極
部分118、及びアンテナとして機能するアンテナ用コ
イルパターン102を含む回路パターン119が形成さ
れる。
First Embodiment FIG. 1 shows a semiconductor component mounted component manufactured by using the semiconductor component mounted component manufacturing method of the present embodiment. The above-mentioned semiconductor component mounted component may be referred to as a semiconductor component built-in core module component. Further, in FIG. 1, as an example of the semiconductor module built-in core module part, a semiconductor part built-in core module part 101 forming a non-contact IC card is shown. In the core module component 101 with a built-in semiconductor component in the above non-contact IC card, the semiconductor component 104 and the first semiconductor component reinforcing member 116 have the first thermoplastic resin substrate 1 in advance.
22 of the first thermoplastic resin substrate 122,
On the circuit pattern forming surface 123 corresponding to the circuit forming surface,
Electrode exposed surface 11 of bump 113 of semiconductor component 104
5 is exposed. Such a circuit pattern forming surface 12
3, a circuit pattern 119 including an electrode portion 118 that makes electrical contact with the electrode exposed surface 115 and an antenna coil pattern 102 that functions as an antenna is formed.

【0017】このような構成を有する半導体部品内蔵コ
アモジュール部品101では、回路パターン119と電
極露出面115とは、異方導電性ペースト等を介さずに
直接導通を得ている点、半導体部品104と第1半導体
部品補強部材116との間には接着剤が介在していない
点、並びに、半導体部品実装済部品101における第1
熱可塑性樹脂基材122の回路パターン形成面123及
び該回路パターン形成面123に対向する第1熱可塑性
樹脂基材122の裏面122aが平坦である点で、従来
技術とは異なる。
In the semiconductor component built-in core module component 101 having such a structure, the circuit pattern 119 and the electrode exposed surface 115 are directly connected to each other without the anisotropic conductive paste or the like. There is no adhesive between the first semiconductor component reinforcing member 116 and the first semiconductor component reinforcing member 116, and the first component in the semiconductor component mounted component 101.
This is different from the conventional technique in that the circuit pattern forming surface 123 of the thermoplastic resin base material 122 and the back surface 122a of the first thermoplastic resin base material 122 facing the circuit pattern forming surface 123 are flat.

【0018】図2は、本実施形態の半導体部品実装済部
品の製造方法を用いて作製された半導体部品実装済部品
を備えた半導体部品実装済完成品の一例としての非接触
ICカード100を示している。ここで、124、12
5は、半導体部品104、第1半導体部品補強部材11
6、及び上記回路パターン119を有する上記半導体部
品内蔵コアモジュール部品101を保護する為にラミネ
ート処理を行う為のシート状の部材であり、第3基材及
び第4基材の機能を果たす一例である第3熱可塑性樹脂
基材及び第4熱可塑性樹脂基材である。
FIG. 2 shows a non-contact IC card 100 as an example of a semiconductor component-mounted finished product including a semiconductor component-mounted component manufactured by the method for manufacturing a semiconductor component-mounted component of the present embodiment. ing. Where 124, 12
5 is a semiconductor component 104, a first semiconductor component reinforcing member 11
6 is a sheet-like member for performing a laminating process for protecting the semiconductor component built-in core module component 101 having the circuit pattern 119, and is an example that functions as a third base material and a fourth base material. A certain third thermoplastic resin substrate and a certain fourth thermoplastic resin substrate.

【0019】以下に、上記半導体部品実装済部品101
の製造方法を含めて上記非接触ICカード100の製造
方法について、図を参照して説明する。図11に示すス
テップ(図内では「S」にて示す)101において、図
3に示す半導体部品104の電極117上に、金、銅、
又は半田等にてなる金属ワイヤを用いたワイヤボンディ
ング法により、バンプ113を形成する。尚、バンプ1
13の形成方法は、上記ワイヤボンディング法による形
成に限定されるものではなく、メッキ法による形成でも
良い。又、図3に示す112は、半導体部品104のア
クティブ面を保護する為のパッシベーション膜である。
Below, the semiconductor component mounted component 101 is mounted.
The manufacturing method of the non-contact IC card 100 including the manufacturing method of 1. will be described with reference to the drawings. In the step 101 (indicated by “S” in the figure) shown in FIG. 11, gold, copper, and the like are deposited on the electrode 117 of the semiconductor component 104 shown in FIG.
Alternatively, the bump 113 is formed by a wire bonding method using a metal wire made of solder or the like. In addition, bump 1
The forming method of 13 is not limited to the above-mentioned wire bonding method, but may be a plating method. Reference numeral 112 shown in FIG. 3 is a passivation film for protecting the active surface of the semiconductor component 104.

【0020】次のステップ102において、バンプ11
3を形成した半導体部品104、及び該半導体部品10
4の上記アクティブ面に対向する裏面104aに接触し
て設けられた、図4に示す第1半導体部品補強部材11
6を、ポリエチレンテレフタレート、塩化ビニル、ポリ
カーボネイト、又はアクリロニトリルブタジエンスチレ
ン等の電気的絶縁性を有する熱可塑性樹脂で形成された
シート状の、第1基材の機能を果たす一例である第1熱
可塑性樹脂基材122の裏面122a上に図6に示すよ
うに載置する。上記第1半導体部品補強部材116は、
本実施形態では、半導体部品104の上記裏面104a
に接触して設けられ半導体部品104と同じ若しくはそ
れを超える面積を有する。又、第1半導体部品補強部材
116は、ステンレス、ニッケル、銅、又はアルミニウ
ム等の金属や、プラスチック等で形成されており、その
形状は、図4に示す四角形や、図5に示すように円形状
であっても良く、特に限定されるものでは無い。又、そ
の厚みは、第1熱可塑性樹脂基材122及び半導体部品
104の厚みによって変化するが、一般的には50〜2
00μm程度が好ましい。即ち、第1半導体部品補強部
材116の材質、形状、及び厚みは、外力による半導体
部品104の損傷を防止可能な観点から決定される。
In the next step 102, the bump 11
3, the semiconductor component 104 in which 3 is formed, and the semiconductor component 10
4, the first semiconductor component reinforcing member 11 shown in FIG. 4 provided in contact with the back surface 104a facing the active surface.
6 is a sheet-like first thermoplastic resin serving as a first base material, which is formed of a thermoplastic resin having electrical insulation properties such as polyethylene terephthalate, vinyl chloride, polycarbonate, or acrylonitrile butadiene styrene. It is placed on the back surface 122a of the base material 122 as shown in FIG. The first semiconductor component reinforcing member 116 is
In this embodiment, the back surface 104 a of the semiconductor component 104 is used.
And has an area equal to or larger than that of the semiconductor component 104. The first semiconductor component reinforcing member 116 is formed of metal such as stainless steel, nickel, copper, or aluminum, or plastic, and the shape thereof is a quadrangle shown in FIG. 4 or a circle as shown in FIG. It may have a shape and is not particularly limited. Further, the thickness thereof varies depending on the thicknesses of the first thermoplastic resin base material 122 and the semiconductor component 104, but generally 50 to 2
It is preferably about 00 μm. That is, the material, shape, and thickness of the first semiconductor component reinforcing member 116 are determined from the viewpoint of preventing damage to the semiconductor component 104 due to external force.

【0021】上記第1熱可塑性樹脂基材122の厚みt
1は、本実施形態の場合、後述するようにバンプ113
を第1熱可塑性樹脂基材122の回路パターン形成面1
23から露出させる必要があることから、基本的に半導
体部品104と第1半導体部品補強部材116の厚みを
合わせたの厚み以上で、半導体部品104の厚みとバン
プ113の高さと第1半導体部品補強部材116の厚み
を合わせた厚み以下にすることが望ましい。例えば、半
導体部品104の厚みが180μm、バンプ113の高
さが40μm、第1半導体部品補強部材116の厚みが
50μmの場合、第1熱可塑性樹脂基材122の厚みは
250μmが好ましい。
The thickness t of the first thermoplastic resin substrate 122.
In the case of the present embodiment, 1 is the bump 113 as described later.
The circuit pattern forming surface 1 of the first thermoplastic resin substrate 122
Since it is necessary to expose from 23, the thickness of the semiconductor component 104, the height of the bump 113, and the first semiconductor component reinforcement are basically not less than the combined thickness of the semiconductor component 104 and the first semiconductor component reinforcing member 116. It is desirable that the total thickness of the members 116 be less than or equal to the total thickness. For example, when the thickness of the semiconductor component 104 is 180 μm, the height of the bump 113 is 40 μm, and the thickness of the first semiconductor component reinforcing member 116 is 50 μm, the thickness of the first thermoplastic resin base material 122 is preferably 250 μm.

【0022】次のステップ103では、図7に示すよう
に、バンプ113付の半導体部品104及び第1半導体
部品補強部材116を載置した第1熱可塑性樹脂基材1
22を熱プレス板171、172の各平坦面間に挟み、
熱プレス板171、172にて、バンプ113付半導体
部品104及び第1半導体部品補強部材116、並びに
第1熱可塑性樹脂基材122を加熱しながら、これらを
相対的に押圧して、図8に示すように半導体部品104
及び第1半導体部品補強部材116を第1熱可塑性樹脂
基材122内に埋設する。尚、図7において、173、
174は、上記押圧動作の為に熱プレス板171、17
2を移動させる各移動装置であり、175、176は、
熱プレス板171、172をそれぞれ加熱する為の加熱
装置である。該熱プレスの条件は、例えばポリエチレン
テレフタレート製の第1熱可塑性樹脂基材122を用い
た場合、圧力30×10Pa、温度160℃、プレス
時間1分である。尚、上記温度及び圧力は、第1熱可塑
性樹脂基材122の材質により異ならせる。
In the next step 103, as shown in FIG. 7, the first thermoplastic resin substrate 1 on which the semiconductor component 104 with the bump 113 and the first semiconductor component reinforcing member 116 are mounted.
22 is sandwiched between the flat surfaces of the heat press plates 171 and 172,
While the semiconductor component 104 with bumps 113, the first semiconductor component reinforcing member 116, and the first thermoplastic resin base material 122 are heated by the hot press plates 171, 172, they are relatively pressed, and as shown in FIG. As shown in the semiconductor component 104
And the first semiconductor component reinforcing member 116 is embedded in the first thermoplastic resin base material 122. In FIG. 7, 173,
174 is the hot press plates 171, 17 for the pressing operation.
2 are moving devices for moving 2 and 175 and 176 are
A heating device for heating the hot press plates 171 and 172, respectively. The conditions of the hot pressing are, for example, when the first thermoplastic resin substrate 122 made of polyethylene terephthalate is used, the pressure is 30 × 10 5 Pa, the temperature is 160 ° C., and the pressing time is 1 minute. The temperature and pressure are changed depending on the material of the first thermoplastic resin base material 122.

【0023】本実施形態では、バンプ113が熱プレス
板171に接触するであろうバンプ113の電極露出面
115が、熱プレス板171に達するまで押圧されるこ
とから、図8に示すように上記プレス動作により、上記
電極露出面115は、第1熱可塑性樹脂基材122にお
ける上記熱プレス板171との接触面である上記回路パ
ターン形成面123に露出することになる。このとき、
本実施形態では、第1半導体部品補強部材116の第2
面116bと、上記パターン形成面123に対向する第
1熱可塑性樹脂基材122の裏面122aとは、図示す
るように同―面となるようにしているが、これに限定さ
れるものではない。つまり、製造する半導体部品実装済
部品によっては、上述した第1熱可塑性樹脂基材122
の厚みt1や、熱プレス板171、172の押圧力等の
調整又は形状により、例えば、第1熱可塑性樹脂基材1
22の裏面122aより第1半導体部品補強部材116
の第2面116bを凹ませても、又は、突出させても良
い。
In the present embodiment, since the electrode exposed surface 115 of the bump 113 where the bump 113 will come into contact with the hot press plate 171 is pressed until it reaches the hot press plate 171, as shown in FIG. By the pressing operation, the electrode exposed surface 115 is exposed on the circuit pattern forming surface 123 which is a contact surface of the first thermoplastic resin substrate 122 with the hot press plate 171. At this time,
In the present embodiment, the second semiconductor component reinforcing member 116
The surface 116b and the back surface 122a of the first thermoplastic resin substrate 122 facing the pattern forming surface 123 are made to be the same surface as shown in the drawing, but the invention is not limited to this. That is, depending on the semiconductor component mounted parts to be manufactured, the above-mentioned first thermoplastic resin base material 122 is used.
Of the first thermoplastic resin substrate 1 depending on the adjustment or shape of the thickness t1 of the sheet and the pressing force of the hot press plates 171 and 172.
22 from the back surface 122a of the first semiconductor component reinforcing member 116
The second surface 116b may be recessed or projected.

【0024】次のステップ105では、第1熱可塑性樹
脂基材122のパターン形成面123に露出しているバ
ンプ113の電極露出面115に接触するようにして、
銀、銅等の導電性ペーストを用いて、回路パターン11
9を回路パターン形成面123上に形成する。該導電性
ペーストによる回路パターン119の形成は、一般的に
スクリーン印刷、オフセット印刷、又はグラビア印刷等
によって行われる。例えばスクリーン印刷の場合、16
5メッシュ/インチ、乳剤厚み10μmのマスクを介し
て導電性ペーストを印刷し、導体厚み約30μmの回路
パターン119を形成する。その後、100℃、15分
程度の硬化条件で上記導電性ぺ―ストの硬化を行う。
尚、勿論、上記回路パターン119は、製造物としての
半導体部品実装済部品の機能に応じた形態に形成され
る。このようにして、回路パターン119と半導体部品
104との電気的接続を図り、図1に示す半導体部品部
品内蔵コアモジュール部品101が形成される。さら
に、以下の工程を実行することで、即ち半導体部品実装
済完成品の製造方法を実行することで、半導体部品実装
済完成品、本実施形態では非接触ICカード100が作
製される。
In the next step 105, the electrode exposed surface 115 of the bump 113 exposed on the pattern forming surface 123 of the first thermoplastic resin substrate 122 is brought into contact with the surface.
The circuit pattern 11 is formed by using a conductive paste such as silver or copper.
9 is formed on the circuit pattern forming surface 123. The circuit pattern 119 is generally formed by the conductive paste by screen printing, offset printing, gravure printing, or the like. For example, in the case of screen printing, 16
A conductive paste is printed through a mask having a mesh size of 5 mesh / inch and an emulsion thickness of 10 μm to form a circuit pattern 119 having a conductor thickness of about 30 μm. Then, the conductive paste is cured under curing conditions of 100 ° C. and about 15 minutes.
Of course, the circuit pattern 119 is formed in a form corresponding to the function of the semiconductor component mounted component as a manufactured product. In this way, the circuit pattern 119 and the semiconductor component 104 are electrically connected, and the semiconductor component component built-in core module component 101 shown in FIG. 1 is formed. Furthermore, by executing the following steps, that is, by executing the method for manufacturing a semiconductor component-mounted finished product, the semiconductor component-mounted finished product, in the present embodiment, the contactless IC card 100 is manufactured.

【0025】次のステップ106では、図9に示すよう
に、上記半導体部品内蔵コアモジュール部品101をそ
の厚み方向からポリエチレンテレフタレート、塩化ビニ
ル、ポリカーボネイト、又はアクリロニトリルブタジエ
ンスチレン等の電気的絶縁性を有するシート状の第3熱
可塑性樹脂基材124及び第4熱可塑性樹脂基材125
にてサンドイッチして、ラミネート処理し、半導体部品
内蔵コアモジュール部品101の封止を行なう。該ラミ
ネート処理は、加熱された平面プレス板201、202
により加熱及び加圧して実施する。処理条件は、例えば
ポリエチレンテレフタレート製の第1熱可塑性樹脂基材
122を用いた場合、圧力30×10Pa、温度16
0℃、プレス昇圧時間1分、圧力保持時間1分である。
尚、図9において、205、206は、上記押圧動作の
為に平面プレス板201、202を移動させる各移動装
置であり、207、208は、平面プレス板201、2
02をそれぞれ加熱する為の加熱装置である。
In the next step 106, as shown in FIG. 9, the semiconductor component built-in core module component 101 is electrically insulated from the thickness direction by a sheet such as polyethylene terephthalate, vinyl chloride, polycarbonate, or acrylonitrile butadiene styrene. -Shaped third thermoplastic resin base material 124 and fourth thermoplastic resin base material 125
Then, the semiconductor module built-in core module component 101 is sealed by sandwiching and laminating. The laminating process is performed by heating the flat press plates 201 and 202.
By heating and pressurizing. The treatment conditions are, for example, a pressure of 30 × 10 5 Pa and a temperature of 16 when the first thermoplastic resin substrate 122 made of polyethylene terephthalate is used.
0 ° C., press pressurization time 1 minute, pressure holding time 1 minute.
In FIG. 9, 205 and 206 are moving devices for moving the flat press plates 201 and 202 for the pressing operation, and 207 and 208 are flat press plates 201 and 2 respectively.
02 is a heating device for heating each.

【0026】又、上記ラミネート処理は、図10に示す
ロールプレス方式により実施しても良い。図10におい
て203、204は加熱されたローラーである。半導体
部品内蔵コアモジュール部品101をその厚み方向から
サンドイッチする形でポリエチレンテレフタレート、塩
化ビニル、ポリカーボネイト、又はアクリロニトリルブ
タジエンスチレン等の電気的絶縁性を有するシート状の
第3熱可塑性樹脂基材124及び第4熱可塑性樹脂基材
125をローラー203、204の間に供給し、ラミネ
ート処理していく。処理条件は、例えば、ポリエチレン
テレフタレート製の熱可塑性樹脂基材124、125を
用いた場合、圧力30×10Pa、温度160℃、ラ
ミネート速度0.1m/分である。又、熱可塑性樹脂基
材124、125と、半導体部品内蔵コアモジュール部
品101との間に、接着剤シートを供給し、ラミネート
処理を実施する場合もある。尚、図10において、20
9、210は、上記押圧動作の為にローラ203、20
4を回転させる各駆動装置であり、211、212は、
ローラー203、204をそれぞれ加熱する為の加熱装
置である。以上の工程を経て、図2に示すような、半導
体部品104及び第1半導体部品補強部材116が実装
されたモジュールとしての半導体部品実装済部品や、本
実施形態の場合のように半導体部品実装済完成品として
の機能を果たす一例に相当する非接触ICカード100
が完成する。
The laminating process may be carried out by the roll pressing method shown in FIG. In FIG. 10, 203 and 204 are heated rollers. A sheet-shaped third thermoplastic resin base material 124 and a fourth electrically-insulating sheet such as polyethylene terephthalate, vinyl chloride, polycarbonate, or acrylonitrile butadiene styrene sandwiching the semiconductor component built-in core module component 101 from the thickness direction. The thermoplastic resin base material 125 is supplied between the rollers 203 and 204 and laminated. The processing conditions are, for example, a pressure of 30 × 10 5 Pa, a temperature of 160 ° C., and a laminating speed of 0.1 m / min, when the thermoplastic resin substrates 124 and 125 made of polyethylene terephthalate are used. In addition, an adhesive sheet may be supplied between the thermoplastic resin base materials 124 and 125 and the semiconductor component built-in core module component 101 to perform a laminating process. In addition, in FIG.
9, 210 are rollers 203, 20 for the pressing operation.
4 are drive devices for rotating 4, and 211 and 212 are
A heating device for heating each of the rollers 203 and 204. Through the above steps, as shown in FIG. 2, the semiconductor component-mounted component as a module in which the semiconductor component 104 and the first semiconductor component reinforcing member 116 are mounted, or the semiconductor component-mounted component as in the case of the present embodiment. Non-contact IC card 100 corresponding to an example that functions as a finished product
Is completed.

【0027】このように本実施形態によれば、第1熱可
塑性樹脂基材122に半導体部品104及び第1半導体
部品補強部材116を予め埋め込んだ後に、回路パター
ン119の形成を行い、モジュール化する。よって、従
来のように基板1上に半導体部品3及び半導体部品補強
部材15が突設される形状のものをラミネート処理する
のではないことから、完成する半導体部品実装済部品1
01の表面は、平坦な形状である。したがって、カード
化の際に、従来例における図34に示すように凸部を吸
収する為、第2基材12の一部をくり抜いて形成するく
り抜き穴14を設ける必要が無く、くり抜き穴14を形
成する為の工程が不必要となり、高生産性、低コスト化
が可能となる。又、上述のように半導体部品104及び
第1半導体部品補強部材116を埋め込み動作にて固定
することから、従来例の図28に示すような半導体部品
補強部材15を装着するための接着剤7は不要である。
よって、その塗布及び硬化の為の工程は不要となり、生
産性が向上し、接着剤7の材料費分、コストの削減を図
ることができる。
As described above, according to this embodiment, after the semiconductor component 104 and the first semiconductor component reinforcing member 116 are embedded in the first thermoplastic resin substrate 122 in advance, the circuit pattern 119 is formed and modularized. . Therefore, the semiconductor component-mounted component 1 to be completed is completed because the semiconductor component 3 and the semiconductor component reinforcing member 15 having a projecting shape on the substrate 1 are not laminated as in the conventional case.
The surface of 01 has a flat shape. Therefore, when the card is formed, since the convex portions are absorbed as shown in FIG. 34 in the conventional example, it is not necessary to provide the hollow hole 14 formed by hollowing out a part of the second base material 12, and the hollow hole 14 is formed. The process for forming is unnecessary, and high productivity and cost reduction are possible. Since the semiconductor component 104 and the first semiconductor component reinforcing member 116 are fixed by the embedding operation as described above, the adhesive 7 for mounting the semiconductor component reinforcing member 15 as shown in FIG. It is unnecessary.
Therefore, the steps for coating and curing are unnecessary, the productivity is improved, and the material cost of the adhesive 7 and the cost can be reduced.

【0028】第2実施形態;上述の第1実施形態では、
図6及び図7に示すように第1熱可塑性樹脂基材122
上に半導体部品104及び第1半導体部品補強部材11
6を載置した後、熱プレス板171、172間に挟み、
熱プレスし、半導体部品104及び第1半導体部品補強
部材116を第1熱可塑性樹脂基材122内に埋設した
が、当該第2実施形態では、半導体部品104及び第1
半導体部品補強部材116の埋設プロセスが第1実施形
態の場合と異なる。図12に示すフローチャートを参照
にしながらそのプロセスを説明する。
Second Embodiment: In the above-mentioned first embodiment,
As shown in FIGS. 6 and 7, the first thermoplastic resin substrate 122
Above the semiconductor component 104 and the first semiconductor component reinforcing member 11
6 is placed, then sandwiched between the heat press plates 171 and 172,
The semiconductor component 104 and the first semiconductor component reinforcing member 116 were embedded in the first thermoplastic resin base material 122 by hot pressing, but in the second embodiment, the semiconductor component 104 and the first semiconductor component 104 are embedded.
The embedding process of the semiconductor component reinforcing member 116 is different from that in the first embodiment. The process will be described with reference to the flowchart shown in FIG.

【0029】図12に示すステップ201では、上述の
ステップ101と同様に半導体部品104にバンプ11
3が形成される。次に、ステップ202〜204では、
図13に示すように、半導体部品104のみを第1熱可
塑性樹脂基材122に予め埋設しておく点で上述第1実
施形態とはプロセスが異なる。ここで、第1熱可塑性樹
脂基材122の厚みt1は、本第2実施形態の場合、バ
ンプ113を第1熱可塑性樹脂基材122の回路パター
ン形成面123から露出させる必要から、基本的に半導
体部品104の厚み以上で、半導体部品104の厚みと
バンプ113の高さとを合わせた厚み以下にすることが
望ましい。例えば、半導体部品104の厚みが180μ
m、バンプ113の高さが40μmの場合、第1熱可塑
性樹脂基材122の厚みt1は200μmが好ましい。
熱プレスを用いた上記埋設工程は、図7を参照して説明
した第1実施形態の場合と同じである。ステップ203
にて、バンプ113が熱プレス板171に接触するであ
ろうバンプ113の電極露出面115が熱プレス板17
1に達するまで押圧動作が行われることから、該押圧動
作により、上記電極露出面115は、第1熱可塑性樹脂
基材122における上記熱プレス板171との接触面で
ある上記回路パターン形成面123に露出することにな
る。
In step 201 shown in FIG. 12, the bumps 11 are formed on the semiconductor component 104 in the same manner as step 101 described above.
3 is formed. Next, in steps 202 to 204,
As shown in FIG. 13, the process is different from that of the first embodiment in that only the semiconductor component 104 is embedded in the first thermoplastic resin base material 122 in advance. Here, in the case of the second embodiment, the thickness t1 of the first thermoplastic resin substrate 122 is basically because the bump 113 needs to be exposed from the circuit pattern forming surface 123 of the first thermoplastic resin substrate 122. It is desirable that the thickness is equal to or larger than the thickness of the semiconductor component 104 and equal to or smaller than the total thickness of the semiconductor component 104 and the height of the bump 113. For example, the thickness of the semiconductor component 104 is 180 μ
m and the height of the bump 113 is 40 μm, the thickness t1 of the first thermoplastic resin substrate 122 is preferably 200 μm.
The embedding process using the hot press is the same as that of the first embodiment described with reference to FIG. 7. Step 203
Then, the electrode exposed surface 115 of the bump 113 where the bump 113 will come into contact with the hot press plate 171 is
Since the pressing operation is performed until reaching 1, the electrode exposing surface 115 is the circuit pattern forming surface 123 which is a contact surface of the first thermoplastic resin substrate 122 with the hot press plate 171 by the pressing operation. Will be exposed to.

【0030】次に、ステップ205〜206において、
図14に示すように第1半導体部品補強部材116の第
1面116aを半導体部品104の裏面104aに接触
させかつ半導体部品104を覆うようにして半導体部品
104上に載置し、さらに、第1熱可塑性樹脂基材12
2とほぼ同サイズにてなる第2熱可塑性樹脂基材222
を上記第1半導体部品補強部材116上に載置する。そ
して、図7に示す工程と同様の熱プレスを実施する。そ
の結果、図15に示すように上記裏面104aにて半導
体部品104と第1半導体部品補強部材116とが接触
した状態にて、第1半導体部品補強部材116は第2熱
可塑性樹脂基材222内に埋設され、かつ第1熱可塑性
樹脂基材122と第2熱可塑性樹脂基材222とは融合
し一体的に成形される。この場合、第1半導体部品補強
部材116が第2熱可塑性樹脂基材222内に埋設され
るとき、図15に示すように、第1半導体部品補強部材
116の上記第1面116aに対向する第2面116b
は、第2熱可塑性樹脂基材222の外表面には露出しな
い。又、図16に示すように、第2熱可塑性樹脂基材2
22の表面222aに第1半導体部品補強部材116の
上記第1面116aを露出させるように、予め別工程に
て第2熱可塑性樹脂基材222に第1半導体部品補強部
材116を埋設しておき、該第1半導体部品補強部材1
16の上記第1面116aを半導体部品104の裏面1
04aに接触させかつ半導体部品104を覆うようにし
て半導体部品104上に第1半導体部品補強部材116
を載置して、第1熱可塑性樹脂基材122と第2熱可塑
性樹脂基材222との融合、一体化を行うようにしても
良い。
Next, in steps 205 to 206,
As shown in FIG. 14, the first semiconductor component reinforcing member 116 is placed on the semiconductor component 104 such that the first surface 116a of the first semiconductor component reinforcing member 116 contacts the back surface 104a of the semiconductor component 104 and covers the semiconductor component 104. Thermoplastic resin base material 12
The second thermoplastic resin base material 222 having substantially the same size as the second thermoplastic resin base material 222
Is placed on the first semiconductor component reinforcing member 116. Then, hot pressing similar to the step shown in FIG. 7 is performed. As a result, as shown in FIG. 15, in the state where the semiconductor component 104 and the first semiconductor component reinforcing member 116 are in contact with each other on the back surface 104a, the first semiconductor component reinforcing member 116 is inside the second thermoplastic resin base material 222. The first thermoplastic resin base material 122 and the second thermoplastic resin base material 222 are fused and integrally molded. In this case, when the first semiconductor component reinforcing member 116 is embedded in the second thermoplastic resin base material 222, as shown in FIG. 15, a first semiconductor component reinforcing member 116 facing the first surface 116a may be provided. Two sides 116b
Is not exposed on the outer surface of the second thermoplastic resin substrate 222. In addition, as shown in FIG. 16, the second thermoplastic resin substrate 2
In order to expose the first surface 116a of the first semiconductor component reinforcing member 116 to the surface 222a of the second semiconductor component 22, the first semiconductor component reinforcing member 116 is embedded in the second thermoplastic resin base material 222 in a separate process in advance. , The first semiconductor component reinforcing member 1
The first surface 116 a of the 16 is the back surface 1 of the semiconductor component 104.
04a and cover the semiconductor component 104 so as to cover the semiconductor component 104.
Alternatively, the first thermoplastic resin base material 122 and the second thermoplastic resin base material 222 may be fused and integrated with each other.

【0031】第1半導体部品補強部材116の埋設後、
ステップ207において、上記回路パターン形成面12
3に回路パターン119を形成し、半導体部品実装済部
品を完成し、さらに図17に示すように第3熱可塑性樹
脂基材124、第4熱可塑性樹脂基材125でサンドイ
ッチし、ラミネート処理することで半導体部品実装済完
成品を得る。
After embedding the first semiconductor component reinforcing member 116,
In step 207, the circuit pattern forming surface 12
3, a circuit pattern 119 is formed, a semiconductor component mounted component is completed, and further sandwiched by a third thermoplastic resin base material 124 and a fourth thermoplastic resin base material 125 as shown in FIG. 17 and laminated. To obtain a completed semiconductor component mounted product.

【0032】このように第2実施形態の方法によれば、
第1半導体部品補強部材116の第2面116b上にも
さらに第2熱可塑性樹脂基材222が存在する点で、図
8に示す場合と異なる。該第2実施形態における半導体
部品実装済部品及び半導体部品実装済完成品によれば、
上述の第1実施形態の場合に比べて、第1半導体部品補
強部材116の封止を行うための樹脂基材を省くことが
できる。
As described above, according to the method of the second embodiment,
This is different from the case shown in FIG. 8 in that the second thermoplastic resin base material 222 also exists on the second surface 116b of the first semiconductor component reinforcing member 116. According to the semiconductor component mounted component and the semiconductor component mounted finished product in the second embodiment,
The resin base material for sealing the first semiconductor component reinforcing member 116 can be omitted as compared with the case of the above-described first embodiment.

【0033】又、変形例として、上述のステップ204
にて、半導体部品104の埋設後、上記回路パターン形
成面123に回路パターン119を形成しておいて、そ
の後、ステップ205、206、208の工程をとって
も良い。尚、図15に示す場合のように、第1半導体部
品補強部材116の第2面116b側に第2熱可塑性樹
脂基材222が存在し第1半導体部品補強部材116が
全て封止されることから、該第2熱可塑性樹脂基材22
2上にさらに上記第3熱可塑性樹脂基材124を設けな
くても良い。このように第2熱可塑性樹脂基材222上
にさらに上記第3熱可塑性樹脂基材124を設けるか否
かは、半導体部品実装済完成品として求められる厚み
と、上記第2熱可塑性樹脂基材222の厚みとの相関関
係で決定される。このように、第3熱可塑性樹脂基材1
24は、半導体部品実装済完成品の厚み調整用に用いる
ことができる。
As a modification, step 204 described above is used.
Then, after embedding the semiconductor component 104, the circuit pattern 119 may be formed on the circuit pattern forming surface 123, and then the steps 205, 206, and 208 may be performed. Note that, as in the case shown in FIG. 15, the second thermoplastic resin base material 222 exists on the second surface 116b side of the first semiconductor component reinforcing member 116, and the first semiconductor component reinforcing member 116 is completely sealed. From the second thermoplastic resin substrate 22
The third thermoplastic resin base material 124 may not be further provided on the second. As described above, whether or not the third thermoplastic resin base material 124 is further provided on the second thermoplastic resin base material 222 depends on the thickness required for the completed semiconductor component mounted product and the second thermoplastic resin base material. It is determined by the correlation with the thickness of 222. Thus, the third thermoplastic resin substrate 1
24 can be used for adjusting the thickness of the completed semiconductor component mounted product.

【0034】第3実施形態;上述の第2実施形態では、
図14に示すように第1熱可塑性樹脂基材122に半導
体部品104を埋設後、半導体部品104の裏面104
aに第1半導体部品補強部材116の第1面116aを
接触させて第1半導体部品補強部品116を配置し、さ
らに第2熱可塑性樹脂基材222を載置したが、当該第
3実施形態は、図18に示すように、第1熱可塑性樹脂
基材122に埋設された半導体部品104と、第1半導
体部品補強部材116と間に、第5熱可塑性樹脂基材2
50を設ける点で異なる。図18に示す構成にて、図7
に示す工程と同様の熱プレスを実施し、その結果図19
に示すように、半導体部品104と第1半導体部品補強
部材116との間に第5熱可塑性樹脂基材250が介在
した状態で、半導体部品104及び第1半導体部品補強
部材116が第1熱可塑性樹脂基材122、第5熱可塑
性樹脂基材250、及び第2熱可塑性樹脂基材222に
埋設された形態の半導体部品実装済部品105が得られ
る。
Third Embodiment: In the above-described second embodiment,
As shown in FIG. 14, after the semiconductor component 104 is embedded in the first thermoplastic resin substrate 122, the back surface 104 of the semiconductor component 104 is removed.
The first surface 116a of the first semiconductor component reinforcing member 116 is brought into contact with a, the first semiconductor component reinforcing component 116 is arranged, and the second thermoplastic resin base material 222 is placed, but in the third embodiment, As shown in FIG. 18, the fifth thermoplastic resin substrate 2 is provided between the semiconductor component 104 embedded in the first thermoplastic resin substrate 122 and the first semiconductor component reinforcing member 116.
The difference is that 50 is provided. With the configuration shown in FIG.
The same hot pressing as the step shown in FIG.
As shown in FIG. 3, the semiconductor component 104 and the first semiconductor component reinforcing member 116 have the first thermoplastic resin with the fifth thermoplastic resin base material 250 interposed between the semiconductor component 104 and the first semiconductor component reinforcing member 116. The semiconductor component-mounted component 105 in a form embedded in the resin substrate 122, the fifth thermoplastic resin substrate 250, and the second thermoplastic resin substrate 222 is obtained.

【0035】又、変形例として、上述第2実施形態と同
様に、図20に示すように、第2熱可塑性樹脂基材22
2の表面222aに第1半導体部品補強部材116の第
1面116aを露出させるようにして、予め別工程で第
2熱可塑性樹脂基材222に第1半導体部品補強部材1
16を埋設した工程を採ることもできる。更に、図21
に示すように、表面222aに第1半導体部品補強部材
116の第1面116aを露出させた第2熱可塑性樹脂
基材222の裏面222bを、半導体部品104の裏面
104aに接触させ、かつ上記表面222aに第5熱可
塑性樹脂基材250を接触させる構造を採ることもでき
る。但しこの場合、第1半導体部品補強部材116は、
第2熱可塑性樹脂基材222の裏面222bには露出し
ないように埋設される。その後の、半導体部品実装済部
品、及び半導体部品実装済完成品を形成する工程は、上
述の第2実施形態における説明と同様である。尚、第5
熱可塑性樹脂基材250を省き、ステップ208におけ
る第3熱可塑性樹脂基材124のみにてラミネート処理
しても良い。
As a modification, as in the second embodiment, as shown in FIG. 20, the second thermoplastic resin base material 22 is used.
The second surface 116a of the first semiconductor component reinforcing member 116 is exposed to the surface 222a of the second semiconductor component reinforcing member 116, and the first semiconductor component reinforcing member 1 is previously formed on the second thermoplastic resin base material 222 in another step.
It is also possible to adopt the step of burying 16. Further, FIG.
As shown in FIG. 5, the back surface 222a of the second thermoplastic resin base material 222 having the first surface 116a of the first semiconductor component reinforcing member 116 exposed on the front surface 222a is brought into contact with the back surface 104a of the semiconductor component 104, and It is also possible to adopt a structure in which the fifth thermoplastic resin substrate 250 is brought into contact with 222a. However, in this case, the first semiconductor component reinforcing member 116 is
The back surface 222b of the second thermoplastic resin substrate 222 is embedded so as not to be exposed. Subsequent steps of forming a semiconductor component-mounted component and a semiconductor component-mounted finished product are the same as those described in the second embodiment. The fifth
The thermoplastic resin base material 250 may be omitted and the laminating process may be performed only with the third thermoplastic resin base material 124 in step 208.

【0036】このように第3実施形態は、上述の第2実
施形態における図15に示す構成と比べて、半導体部品
104の裏面104aと第1半導体部品補強部材116
との間に熱可塑性樹脂が介在している点で異なる。この
ように、半導体部品104と第1半導体部品補強部材1
16との間に、これら半導体部品104及び第1半導体
部品補強部材116に比べて弾性率の低い樹脂が介在す
ることで、半導体部品実装済部品及び半導体部品実装済
完成品において曲げに対する半導体部品104の割れ防
止に対する効果が大きくなる。
As described above, in the third embodiment, the back surface 104a of the semiconductor component 104 and the first semiconductor component reinforcing member 116 are different from the configuration shown in FIG. 15 in the second embodiment.
The difference is that a thermoplastic resin is interposed between and. Thus, the semiconductor component 104 and the first semiconductor component reinforcing member 1
By interposing a resin having a lower elastic modulus than the semiconductor component 104 and the first semiconductor component reinforcing member 116 between the semiconductor component 104 and the semiconductor component 104, the semiconductor component 104 against bending in the semiconductor component-mounted component and the semiconductor component-mounted finished product. The effect of preventing cracking is increased.

【0037】第4実施形態;上述の第1実施形態〜第3
実施形態では、半導体部品104の裏面104a側にの
み第1半導体部品補強部材116を配置する構成であっ
たが、当該第4実施形態では、半導体部品104の厚み
方向の両側に半導体部品補強部材を配置する半導体部品
実装済完成品の製造方法を示す。即ち、半導体部品10
4を間に挟んで、第1半導体部品補強部材116と、下
記の第2半導体部品補強部材215とが設けられる。当
該第4実施形態において、図12に示すステップ207
までのプロセスは、上述の第1実施形態〜第3実施形態
におけるプロセスと同様である。よって当該第4実施形
態にて特徴的な工程は、ステップ208におけるラミネ
ート処理にて、第2半導体部品補強部材215を載置し
ておく点である。
Fourth Embodiment; First to Third Embodiments Above
In the embodiment, the first semiconductor component reinforcing member 116 is arranged only on the back surface 104a side of the semiconductor component 104, but in the fourth embodiment, the semiconductor component reinforcing member is provided on both sides in the thickness direction of the semiconductor component 104. A method of manufacturing a completed semiconductor component-mounted product to be arranged will be described. That is, the semiconductor component 10
A first semiconductor component reinforcing member 116 and a second semiconductor component reinforcing member 215 described below are provided with 4 in between. In the fourth embodiment, step 207 shown in FIG.
The processes up to are the same as the processes in the above-described first to third embodiments. Therefore, the characteristic step in the fourth embodiment is that the second semiconductor component reinforcing member 215 is placed in the laminating process in step 208.

【0038】第2半導体部品補強部材215の設置方法
は、図22、図24に示すように、予め別工程にて、第
4熱可塑性樹脂基材125の表面125aに第2半導体
部品補強部材215が露出するように、第4熱可塑性樹
脂基材125に第2半導体部品補強部材215を埋設し
ておく方法、又は、図23に示すように半導体部品実装
済部品101の半導体部品104に対向させて第2半導
体部品補強部材215そのものを配置する方法がある。
尚、図24の場合、第2半導体部品補強部材215が露
出した上記表面125aが半導体部品実装済部品の外表
面を構成することになるので、露出している第2半導体
部品補強部材215を封止すべく、第6熱可塑性樹脂基
材255を配置する必要がある。尚、上記第2半導体部
品補強部材215は、基本的に、上述した第1半導体部
品補強部材116と同一の形状、材料にてなる物を使用
することができるが、図22及び図23の構成では、第
2半導体部品補強部材215と回路パターン119とが
直接に接触する可能性があることから、この場合、第2
半導体部品補強部材215は、電気的絶縁性を有しかつ
半導体部品104の補強を図れる剛性を有する材料にて
なる必要がある。又、図23に示す構成の応用として、
図25に示すよう第2半導体部品補強部材215と半導
体部品実装済部品101との間に第7熱可塑性樹脂基材
260を配置する場合もある。
As shown in FIGS. 22 and 24, the method of installing the second semiconductor component reinforcing member 215 is such that the second semiconductor component reinforcing member 215 is formed on the surface 125a of the fourth thermoplastic resin substrate 125 in advance in another step. So that the second semiconductor component reinforcing member 215 is embedded in the fourth thermoplastic resin base material 125 so that the parts are exposed, or as shown in FIG. 23, facing the semiconductor component 104 of the semiconductor component mounted component 101. There is a method of arranging the second semiconductor component reinforcing member 215 itself.
In the case of FIG. 24, the exposed surface 125a of the second semiconductor component reinforcing member 215 constitutes the outer surface of the semiconductor component-mounted component, so the exposed second semiconductor component reinforcing member 215 is sealed. In order to stop, it is necessary to arrange the sixth thermoplastic resin base material 255. The second semiconductor component reinforcing member 215 can be basically the same in shape and material as the first semiconductor component reinforcing member 116 described above, but the configuration of FIGS. 22 and 23 is used. Since the second semiconductor component reinforcing member 215 and the circuit pattern 119 may come into direct contact with each other, in this case,
The semiconductor component reinforcing member 215 needs to be made of a material having electrical insulation and rigidity enough to reinforce the semiconductor component 104. In addition, as an application of the configuration shown in FIG.
As shown in FIG. 25, the seventh thermoplastic resin base material 260 may be arranged between the second semiconductor component reinforcing member 215 and the semiconductor component mounted component 101.

【0039】図22〜図25に示すそれぞれの構成にお
いて、半導体部品実装済部品101の厚み方向に沿って
押圧処理を行い、さらにラミネート処理を実施すること
で、図26に示すように、半導体部品104の厚み方向
における両側に半導体部品補強部材116、215を配
置した半導体部品実装済完成品106が完成する。該半
導体部品実装済完成品106によれば、上述の第1実施
形態〜第3実施形態における半導体部品実装済完成品に
比べて、半導体部品補強部材数が倍であるので、半導体
部品104の保護をより確実に行うことができる。又、
図25に示すように第7熱可塑性樹脂基材260を配置
することで、上述の第3実施形態の場合と同様に半導体
部品実装済完成品において曲げに対する半導体部品10
4の割れ防止に対する効果が大きくなる。
In each of the configurations shown in FIGS. 22 to 25, a pressing process is performed along the thickness direction of the semiconductor component mounted component 101, and a laminating process is further performed, so that the semiconductor component is mounted as shown in FIG. The semiconductor component mounted completed product 106 in which the semiconductor component reinforcing members 116 and 215 are arranged on both sides in the thickness direction of 104 is completed. According to the completed semiconductor component-mounted product 106, the number of semiconductor component reinforcing members is twice that of the completed semiconductor component-mounted products in the above-described first to third embodiments, so that the semiconductor component 104 is protected. Can be performed more reliably. or,
By arranging the seventh thermoplastic resin base material 260 as shown in FIG. 25, the semiconductor component 10 against bending in the completed semiconductor component mounted product as in the case of the third embodiment described above.
The effect of preventing cracking in No. 4 is large.

【0040】第5実施形態;本実施形態の半導体部品実
装済完成品は、上述の第4実施形態において、第1半導
体部品補強部材116を搭載せず第2半導体部品補強部
材215のみを設けた構成を有するものである。該第5
実施形態の半導体部品実装済完成品107を図27に示
す。該半導体部品実装済完成品107のように、半導体
部品104のアクティブ面側に第2半導体部品補強部材
215を配置した、片面補強構造の半導体部品実装済完
成品を作製することも可能である。
Fifth Embodiment: The completed semiconductor component-mounted product of this embodiment is different from the above-described fourth embodiment in that the first semiconductor component reinforcing member 116 is not mounted and only the second semiconductor component reinforcing member 215 is provided. It has a structure. The fifth
FIG. 27 shows the completed semiconductor component-mounted product 107 of the embodiment. It is also possible to manufacture a completed semiconductor component-mounted product having a single-sided reinforcing structure in which the second semiconductor component reinforcing member 215 is arranged on the active surface side of the semiconductor component 104 like the semiconductor component-mounted completed product 107.

【0041】以上説明したように上述の実施形態によれ
ば、半導体部品は樹脂基材内に埋設され、さらに半導体
部品補強部材も樹脂基材内に埋め込まれることから、半
導体部品と半導体部品補強部材とを接着する接着剤が不
要となる。よって、該接着剤の塗布及び硬化の為の工程
は不要となり、従来に比べて生産性が良く、又、接着剤
の材料費を削減できる。又、上述のように半導体部品と
半導体部品補強部材とを接着剤を使用せず、半導体部品
及び半導体部品補強部材を樹脂基材内へ埋め込んで半導
体部品に対して半導体部品補強部材を配置させることか
ら、作製される半導体部品実装済部品及び半導体部品実
装済完成品の外表面を平坦化することができる。さら
に、上述のように半導体部品及び半導体部品補強部材
は、樹脂基材内へ埋め込まれることから、従来のくり抜
き穴14を設ける必要はなく、従来に比べて生産性の向
上、コスト削減を図ることができる。このように上述の
各実施形態によれば、高品質、高生産性で安価な、半導
体部品実装済部品の製造方法、半導体部品実装済完成品
の製造方法、及び半導体部品実装済完成品を提供するこ
とができる。
As described above, according to the above embodiment, the semiconductor component is embedded in the resin base material, and the semiconductor component reinforcing member is also embedded in the resin base material. An adhesive for bonding and is unnecessary. Therefore, the steps for applying and curing the adhesive are unnecessary, the productivity is better than in the past, and the material cost of the adhesive can be reduced. In addition, as described above, the semiconductor component and the semiconductor component reinforcing member are embedded in the resin base material without using the adhesive agent and the semiconductor component reinforcing member is arranged with respect to the semiconductor component. Thus, the outer surfaces of the manufactured semiconductor component mounted component and the finished semiconductor component mounted component can be flattened. Further, since the semiconductor component and the semiconductor component reinforcing member are embedded in the resin base material as described above, it is not necessary to provide the conventional hollow hole 14, and the productivity and the cost can be reduced as compared with the conventional one. You can As described above, according to each of the above-described embodiments, a high-quality, high-productivity, low-cost manufacturing method of semiconductor component-mounted components, manufacturing method of semiconductor component-mounted components, and semiconductor component-mounted components are provided. can do.

【0042】[0042]

【発明の効果】以上詳述したように本発明の第1態様に
おける、半導体部品実装済部品の製造方法によれば、半
導体部品と第1半導体部品補強部材とを接触させた状態
で第1基材内へ埋設することから、半導体部品と第1半
導体部品補強部材とを接着する接着剤が不要となり、該
接着剤の塗布及び硬化の為の工程を削除でき、かつ材料
費削減によるコスト低減が図れる。又、従来のくり抜き
穴を設ける必要がなくなる。よって、従来に比べて生産
性を向上させ安価な半導体部品実装済部品の製造方法を
提供可能である。又、上述のように接着剤を使用せず半
導体部品及び半導体部品補強部材を樹脂基材内へ埋め込
んで半導体部品に対して半導体部品補強部材を配置させ
ることから、作製される半導体部品実装済部品及び半導
体部品実装済完成品の外表面を平坦化することができ、
従来に比べて高品質な半導体部品実装済部品の製造方法
を提供可能である。
As described above in detail, according to the method of manufacturing a semiconductor component-mounted component in the first aspect of the present invention, the first component is kept in contact with the semiconductor component and the first semiconductor component reinforcing member. Since it is embedded in the material, an adhesive for adhering the semiconductor component and the first semiconductor component reinforcing member is unnecessary, the steps for applying and curing the adhesive can be eliminated, and the cost can be reduced by reducing the material cost. Can be achieved. Further, it is not necessary to provide a conventional hollow hole. Therefore, it is possible to provide a method of manufacturing a semiconductor component-mounted component which has improved productivity and is less expensive than conventional ones. Further, as described above, the semiconductor component and the semiconductor component reinforcing member are embedded in the resin base material without using the adhesive to dispose the semiconductor component reinforcing member with respect to the semiconductor component, and thus the semiconductor component mounted component manufactured And, it is possible to flatten the outer surface of the completed semiconductor component mounted product,
It is possible to provide a method of manufacturing a component having a semiconductor component mounted thereon, which has higher quality than the conventional method.

【0043】又、本発明の第2態様の半導体部品実装済
部品の製造方法によれば、第1基材内に埋設された半導
体部品に対して、予め第2基材に埋設した第1半導体部
品補強部材を接触させて設置したことより、上記第1半
導体部品補強部材を封止するための樹脂基材を省略する
ことができ、従来に比べて高品質で、生産性の向上が図
れ、かつ安価な半導体部品実装済部品を提供することが
できる。
Further, according to the method of manufacturing a semiconductor component-mounted component of the second aspect of the present invention, the semiconductor component embedded in the first base material is first embedded in the second base material in advance. By placing the component reinforcing members in contact with each other, it is possible to omit the resin base material for sealing the first semiconductor component reinforcing member, which is higher in quality than the conventional one, and productivity can be improved. Moreover, it is possible to provide an inexpensive semiconductor component mounted component.

【0044】又、本発明の第3態様の半導体部品実装済
部品、及び本発明の第5態様の半導体部品実装済完成品
によれば、当該半導体部品実装済部品及び半導体部品実
装済完成品は、上述第1態様及び第2態様の製造方法に
て製造されることから、高品質であり、高い生産性にて
生産され、かつ安価な半導体部品実装済部品とすること
ができる。
According to the semiconductor component-mounted component of the third aspect of the present invention and the semiconductor component-mounted component of the fifth aspect of the present invention, the semiconductor component-mounted component and the semiconductor component-mounted component are: Since it is manufactured by the manufacturing method of the first aspect and the second aspect described above, it is possible to obtain a high-quality, highly productive and inexpensive semiconductor component-mounted component.

【0045】又、本発明の第4態様の半導体部品実装済
完成品の製造方法によれば、半導体部品実装済完成品に
備わる半導体部品実装済部品を上述の第1態様及び第2
態様の製造方法にて製造することから、従来に比べて高
品質で、生産性の向上が図れ、かつ安価な半導体部品実
装済完成品を提供することができる。
Further, according to the method for manufacturing a completed semiconductor component-mounted product of the fourth aspect of the present invention, the semiconductor component-mounted parts provided in the completed semiconductor component-mounted product are the above-mentioned first and second aspects.
Since it is manufactured by the manufacturing method according to the aspect, it is possible to provide a finished product on which semiconductor parts are mounted, which is higher in quality, improved in productivity, and cheaper than conventional products.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の第1実施形態における半導体部品内
蔵コアモジュール部品の断面図である。
FIG. 1 is a cross-sectional view of a semiconductor component built-in core module component according to a first embodiment of the present invention.

【図2】 図1に示す半導体部品内蔵コアモジュール部
品を有する非接触ICカードの断面図である。
FIG. 2 is a cross-sectional view of a non-contact IC card having the core module component with a built-in semiconductor component shown in FIG.

【図3】 図1に示す半導体部品内蔵コアモジュール部
品、及び図2に示す半導体部品実装済完成品の製造過程
を説明するための図であり、半導体部品を示す図であ
る。
FIG. 3 is a diagram for explaining a manufacturing process of the semiconductor component built-in core module component shown in FIG. 1 and the semiconductor component mounted completed product shown in FIG. 2, and is a diagram showing a semiconductor component.

【図4】 図1に示す半導体部品内蔵コアモジュール部
品、及び図2に示す半導体部品実装済完成品の製造過程
を説明するための図であり、半導体部品補強部材の斜視
図である。
FIG. 4 is a diagram for explaining a manufacturing process of the semiconductor module built-in core module component shown in FIG. 1 and the semiconductor component mounted completed product shown in FIG. 2, and a perspective view of a semiconductor component reinforcing member.

【図5】 図4に示す半導体部品補強部材の変形例の斜
視図である。
5 is a perspective view of a modified example of the semiconductor component reinforcing member shown in FIG.

【図6】 図1に示す半導体部品内蔵コアモジュール部
品、及び図2に示す半導体部品実装済完成品の製造過程
を説明するための図であり、第1熱可塑性樹脂基材上に
半導体部品及び第1半導体部品補強部材を載置した状態
を示す図である。
FIG. 6 is a diagram for explaining a manufacturing process of the semiconductor module-embedded core module component shown in FIG. 1 and the semiconductor component-mounted finished product shown in FIG. 2, in which the semiconductor component and the semiconductor component are provided on the first thermoplastic resin substrate. It is a figure which shows the state which mounted the 1st semiconductor component reinforcement member.

【図7】 図1に示す半導体部品内蔵コアモジュール部
品、及び図2に示す半導体部品実装済完成品の製造過程
を説明するための図であり、半導体部品及び第1半導体
部品補強部材を第1熱可塑性樹脂基材へ押し込む状態を
示す図である。
FIG. 7 is a diagram for explaining a manufacturing process of the semiconductor module-embedded core module component shown in FIG. 1 and the semiconductor component-mounted completed product shown in FIG. It is a figure which shows the state pressed in to a thermoplastic resin base material.

【図8】 図1に示す半導体部品内蔵コアモジュール部
品、及び図2に示す半導体部品実装済完成品の製造過程
を説明するための図であり、半導体部品及び半導体部品
補強部材を第1熱可塑性樹脂基材に埋設した状態を示す
図である。
8 is a view for explaining a manufacturing process of the semiconductor module built-in core module component shown in FIG. 1 and the semiconductor component mounted completed product shown in FIG. 2, in which the semiconductor component and the semiconductor component reinforcing member are made of the first thermoplastic resin; It is a figure which shows the state embedded in the resin base material.

【図9】 図2に示す半導体部品実装済完成品の製造過
程を説明するための図であり、半導体部品内蔵コアモジ
ュール部品を平面プレスにてラミネート処理する状態を
示す図である。
FIG. 9 is a diagram for explaining the manufacturing process of the completed semiconductor component-mounted product shown in FIG. 2, and is a diagram showing a state where the core module component with a built-in semiconductor component is laminated by a flat press.

【図10】 図2に示す半導体部品実装済完成品の製造
過程を説明するための図であり、半導体部品内蔵コアモ
ジュール部品をローラーにてラミネート処理する状態を
示す図である。
FIG. 10 is a diagram for explaining the manufacturing process of the completed semiconductor component-mounted product shown in FIG. 2, and is a diagram showing a state where the core module component with a built-in semiconductor component is laminated by a roller.

【図11】 本発明の実施形態における、半導体部品実
装済完成品の製造方法を示すフローチャートである。
FIG. 11 is a flowchart showing a method for manufacturing a completed semiconductor component-mounted product according to the embodiment of the present invention.

【図12】 本発明の実施形態における、半導体部品実
装済完成品の他の製造方法を示すフローチャートであ
る。
FIG. 12 is a flowchart showing another method for manufacturing a completed semiconductor component-mounted product according to the embodiment of the present invention.

【図13】 図12に示す製造方法にて製造される半導
体部品実装済完成品の製造過程を説明するための図であ
り、第1熱可塑性樹脂基材に埋設された半導体部品の状
態を示す断面図である。
13 is a view for explaining the manufacturing process of the completed semiconductor component-mounted product manufactured by the manufacturing method shown in FIG. 12, showing a state of the semiconductor component embedded in the first thermoplastic resin substrate. FIG.

【図14】 図12に示す製造方法にて製造される半導
体部品実装済完成品の製造過程を説明するための図であ
り、半導体部品上に第1半導体部品補強部材を載置した
状態を示す断面図である。
FIG. 14 is a view for explaining the manufacturing process of the completed semiconductor component-mounted product manufactured by the manufacturing method shown in FIG. 12, showing a state in which the first semiconductor component reinforcing member is placed on the semiconductor component. FIG.

【図15】 図12に示す製造方法にて製造される半導
体部品実装済完成品の製造過程を説明するための図であ
り、半導体部品及び第1半導体部品補強部材が封止され
た状態を示す断面図である。
15 is a view for explaining the manufacturing process of the completed semiconductor component-mounted product manufactured by the manufacturing method shown in FIG. 12, showing a state in which the semiconductor component and the first semiconductor component reinforcing member are sealed. FIG.

【図16】 図12に示す製造方法にて製造される半導
体部品実装済完成品の製造過程を説明するための図であ
り、図14に示す製造工程の変形例を示す断面図であ
る。
16 is a view for explaining the manufacturing process of the completed semiconductor component-mounted product manufactured by the manufacturing method shown in FIG. 12, and is a cross-sectional view showing a modified example of the manufacturing process shown in FIG.

【図17】 図12に示す製造方法にて製造される半導
体部品実装済完成品の製造過程を説明するための図であ
り、図15に示す半導体部品実装済部品に対してラミネ
ート処理を行う状態を示す断面図である。
FIG. 17 is a diagram for explaining the manufacturing process of the completed semiconductor component-mounted product manufactured by the manufacturing method shown in FIG. 12, showing a state in which the semiconductor component-mounted components shown in FIG. 15 are laminated. FIG.

【図18】 図12に示す製造方法の変形例であって、
半導体部品と第1半導体部品補強部材との間に第5熱可
塑性樹脂基材を設けた場合を説明するための図である。
FIG. 18 is a modification of the manufacturing method shown in FIG.
It is a figure for demonstrating the case where a 5th thermoplastic resin base material is provided between a semiconductor component and a 1st semiconductor component reinforcement member.

【図19】 図18に示す製造方法にて作製された半導
体部品実装済部品の断面図である。
19 is a cross-sectional view of a semiconductor component mounted component manufactured by the manufacturing method shown in FIG.

【図20】 図12に示す製造方法の変形例であって、
第1半導体部品補強部材を予め埋設した樹脂基材と、半
導体部品との間に第5熱可塑性樹脂基材を設けた場合を
説明するための図である。
FIG. 20 is a modification of the manufacturing method shown in FIG.
It is a figure for demonstrating the case where the 5th thermoplastic resin base material is provided between the resin base material in which the 1st semiconductor component reinforcement member was embedded beforehand, and a semiconductor component.

【図21】 図20に示す製造方法の変形例を説明する
ための図である。
FIG. 21 is a diagram for explaining a modified example of the manufacturing method shown in FIG. 20.

【図22】 図15に示す半導体部品実装済部品を備え
て半導体部品実装済完成品を製造するとき、さらに第2
半導体部品補強部材を設ける場合を示す図である。
FIG. 22 is a diagram showing the second step of manufacturing a completed semiconductor component mounted product including the semiconductor component mounted component shown in FIG.
It is a figure which shows the case where a semiconductor component reinforcement member is provided.

【図23】 図22に示す、半導体部品実装済完成品の
製造方法の変形例を説明するための図である。
FIG. 23 is a diagram for explaining a modified example of the method for manufacturing the completed semiconductor component-mounted product shown in FIG. 22.

【図24】 図22に示す、半導体部品実装済完成品の
製造方法の変形例を説明するための図である。
FIG. 24 is a diagram for explaining a modified example of the method for manufacturing the completed semiconductor component-mounted product shown in FIG. 22.

【図25】 図22に示す、半導体部品実装済完成品の
製造方法の変形例を説明するための図である。
FIG. 25 is a diagram for explaining a modified example of the method for manufacturing the completed semiconductor component-mounted product shown in FIG. 22.

【図26】 図23〜図25に示す製造方法にて製造さ
れた半導体部品実装済完成品の断面図である。
FIG. 26 is a cross-sectional view of a completed semiconductor component-mounted product manufactured by the manufacturing method shown in FIGS. 23 to 25.

【図27】 図26に示す半導体部品実装済完成品の変
形例における断面図である。
FIG. 27 is a sectional view of a modified example of the completed semiconductor component-mounted product shown in FIG. 26.

【図28】 従来の半導体部品実装済部品を示す断面図
である。
FIG. 28 is a cross-sectional view showing a conventional semiconductor component mounted component.

【図29】 従来の半導体部品実装済部品の製造工程を
示すフローチャートである。
FIG. 29 is a flowchart showing a manufacturing process of a conventional semiconductor component mounted component.

【図30】 従来の半導体部品実装済部品に備わる半導
体部品を示す図である。
FIG. 30 is a diagram showing a semiconductor component included in a conventional semiconductor component mounted component.

【図31】 従来の半導体部品実装済部品の製造工程を
説明するための図であり、基板上に異方導電性シートを
載置した状態を示す図である。
FIG. 31 is a diagram for explaining the manufacturing process of the conventional semiconductor component-mounted component, showing the state in which the anisotropic conductive sheet is placed on the substrate.

【図32】 従来の半導体部品実装済部品の製造工程を
説明するための図であり、異方導電性シートを介して回
路パターンと半導体部品との電気的接続を図った状態を
示す断面図である。
FIG. 32 is a view for explaining a conventional manufacturing process of a semiconductor component mounted component, which is a cross-sectional view showing a state in which a circuit pattern and a semiconductor component are electrically connected through an anisotropic conductive sheet. is there.

【図33】 従来の半導体部品実装済部品の製造工程を
説明するための図であり、基板に取り付けられた半導体
部品上に接着剤を設けた状態を示す図である。
FIG. 33 is a diagram for explaining the conventional manufacturing process of the semiconductor component mounted component, showing the state in which the adhesive is provided on the semiconductor component mounted on the substrate.

【図34】 従来の半導体部品実装済完成品の製造工程
を説明するための図である。
FIG. 34 is a diagram for explaining a manufacturing process of a conventional completed semiconductor component-mounted product.

【図35】 従来の半導体部品実装済完成品を示す断面
図である。
FIG. 35 is a cross-sectional view showing a conventional completed semiconductor component-mounted product.

【符号の説明】[Explanation of symbols]

100…非接触ICカード、101…半導体部品内蔵コ
アモジュール部品、104…半導体部品、104a…裏
面、113…バンプ、116…第1半導体部品補強部
材、122…第1熱可塑性樹脂基材、124…第3熱可
塑性樹脂基材、125…第4熱可塑性樹脂基材、222
…第2熱可塑性樹脂基材。
100 ... Non-contact IC card, 101 ... Core module component with built-in semiconductor component, 104 ... Semiconductor component, 104a ... Back surface, 113 ... Bump, 116 ... First semiconductor component reinforcing member, 122 ... First thermoplastic resin base material, 124 ... Third thermoplastic resin base material, 125 ... Fourth thermoplastic resin base material, 222
... A second thermoplastic resin base material.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 半導体部品(104)の裏面(104
a)に該半導体部品の補強を行う第1半導体部品補強部
材(116)を接触させて設け、 上記半導体部品及び上記第1半導体部品補強部材が接触
した状態にて、当該半導体部品及び第1半導体部品補強
部材と第1基材(122)とを相対的に押圧し、上記半
導体部品及び上記第1半導体部品補強部材を上記第1基
材内へ埋設する、ことを特徴とする半導体部品実装済部
品の製造方法。
1. A back surface (104) of a semiconductor component (104).
The first semiconductor component reinforcing member (116) for reinforcing the semiconductor component is provided in contact with a), and the semiconductor component and the first semiconductor component are in contact with the semiconductor component and the first semiconductor component reinforcing member. A semiconductor component is mounted, wherein the component reinforcing member and the first base material (122) are relatively pressed to embed the semiconductor component and the first semiconductor component reinforcing member in the first base material. Manufacturing method of parts.
【請求項2】 上記埋設動作後、上記裏面に対向する上
記半導体部品のアクティブ面に形成されている電極部
(113)が露出している上記第1基材の回路形成面
(123)に、導電性ペースト又は金属メッキにて上記
電極部に接触して回路パターン(119)を形成する、
請求項1記載の半導体部品実装済部品の製造方法。
2. After the burying operation, a circuit forming surface (123) of the first base material, from which an electrode portion (113) formed on an active surface of the semiconductor component facing the back surface is exposed, A circuit pattern (119) is formed by contacting the electrode portion with a conductive paste or metal plating,
A method of manufacturing a semiconductor component-mounted component according to claim 1.
【請求項3】 半導体部品(104)と第1基材(12
2)とを相対的に押圧して上記半導体部品を上記第1基
材内へ埋設し、 上記半導体部品の補強を行う第1半導体部品補強部材
(116)が予め埋設された第2基材(222)を、上
記第1基材内に埋設された上記半導体部品の裏面(10
4a)側であって上記半導体部品と上記第1半導体部品
補強部材とが重なるように配置し、 上記第1基材と上記第2基材とを接合し、 上記接合後、上記裏面に対向する上記半導体部品のアク
ティブ面に形成されている電極部(113)が露出して
いる上記第1基材の回路形成面(123)に、導電性ペ
ースト又は金属メッキにて上記電極部に接触して回路パ
ターン(119)を形成する、ことを特徴とする半導体
部品実装済部品の製造方法。
3. A semiconductor component (104) and a first substrate (12).
2) is relatively pressed to embed the semiconductor component in the first base material, and the second base material (1) in which the first semiconductor component reinforcing member (116) for reinforcing the semiconductor component is embedded in advance. 222) to the back surface (10) of the semiconductor component embedded in the first base material.
4a) side, the semiconductor component and the first semiconductor component reinforcing member are arranged so as to overlap with each other, the first base material and the second base material are joined, and after the joining, they face the back surface. The electrode part (113) formed on the active surface of the semiconductor component is exposed to the circuit forming surface (123) of the first base material by contacting the electrode part with a conductive paste or metal plating. A method of manufacturing a semiconductor component mounted component, comprising forming a circuit pattern (119).
【請求項4】 請求項2又は3記載の半導体部品実装済
部品の製造方法にて製造されたことを特徴とする半導体
部品実装済部品。
4. A semiconductor component-mounted component manufactured by the method for manufacturing a semiconductor component-mounted component according to claim 2 or 3.
【請求項5】 請求項2又は3記載の半導体部品実装済
部品の製造方法にて半導体部品実装済部品を製造し、 上記第1基材の厚み方向から第3基材(124)及び第
4基材(125)にて上記半導体部品実装済部品のラミ
ネート処理を行う、ことを特徴とする半導体部品実装済
完成品の製造方法。
5. A semiconductor component-mounted component is manufactured by the method for manufacturing a semiconductor component-mounted component according to claim 2 or 3, and a third substrate (124) and a fourth component are formed in the thickness direction of the first substrate. A method of manufacturing a completed semiconductor component-mounted product, comprising laminating the semiconductor component-mounted component on a base material (125).
【請求項6】 上記第1基材の上記回路形成面側に上記
第4基材が配置されるとき、上記半導体部品に対向して
上記第4基材には予め第2半導体部品補強部材(21
5)が埋設されている、請求項5記載の半導体部品実装
済完成品の製造方法。
6. When the fourth base material is arranged on the circuit forming surface side of the first base material, the second semiconductor component reinforcing member (in advance) is provided on the fourth base material so as to face the semiconductor component. 21
The method for manufacturing a completed semiconductor component-mounted product according to claim 5, wherein 5) is embedded.
【請求項7】 請求項5又は6記載の半導体部品実装済
完成品の製造方法にて製造されたことを特徴とする半導
体部品実装済完成品。
7. A completed semiconductor component-mounted product manufactured by the method for manufacturing a completed semiconductor component-mounted product according to claim 5 or 6.
JP2001184836A 2001-06-19 2001-06-19 Manufacturing method of semiconductor component mounted component, semiconductor component mounted component, manufacturing method of semiconductor component mounted finished product, and semiconductor component mounted finished product Expired - Fee Related JP3881195B2 (en)

Priority Applications (1)

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JP2001184836A JP3881195B2 (en) 2001-06-19 2001-06-19 Manufacturing method of semiconductor component mounted component, semiconductor component mounted component, manufacturing method of semiconductor component mounted finished product, and semiconductor component mounted finished product

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001184836A JP3881195B2 (en) 2001-06-19 2001-06-19 Manufacturing method of semiconductor component mounted component, semiconductor component mounted component, manufacturing method of semiconductor component mounted finished product, and semiconductor component mounted finished product

Publications (3)

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JP2003006587A true JP2003006587A (en) 2003-01-10
JP2003006587A5 JP2003006587A5 (en) 2005-06-02
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