JP2002525849A5 - - Google Patents
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- Publication number
- JP2002525849A5 JP2002525849A5 JP2000570823A JP2000570823A JP2002525849A5 JP 2002525849 A5 JP2002525849 A5 JP 2002525849A5 JP 2000570823 A JP2000570823 A JP 2000570823A JP 2000570823 A JP2000570823 A JP 2000570823A JP 2002525849 A5 JP2002525849 A5 JP 2002525849A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10054698P | 1998-09-16 | 1998-09-16 | |
| US60/100,546 | 1998-09-16 | ||
| PCT/US1999/021475 WO2000016382A1 (en) | 1998-09-16 | 1999-09-16 | Low temperature formation of backside ohmic contacts for vertical devices |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011108544A Division JP2011151428A (ja) | 1998-09-16 | 2011-05-13 | 裏面オーミックコンタクトを備えた縦型の半導体デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002525849A JP2002525849A (ja) | 2002-08-13 |
| JP2002525849A5 true JP2002525849A5 (enrdf_load_stackoverflow) | 2005-12-22 |
| JP4785249B2 JP4785249B2 (ja) | 2011-10-05 |
Family
ID=22280313
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000570823A Expired - Lifetime JP4785249B2 (ja) | 1998-09-16 | 1999-09-16 | 縦型デバイスのための裏面オーミックコンタクトの低温形成 |
| JP2011108544A Pending JP2011151428A (ja) | 1998-09-16 | 2011-05-13 | 裏面オーミックコンタクトを備えた縦型の半導体デバイス |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011108544A Pending JP2011151428A (ja) | 1998-09-16 | 2011-05-13 | 裏面オーミックコンタクトを備えた縦型の半導体デバイス |
Country Status (9)
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6884644B1 (en) | 1998-09-16 | 2005-04-26 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US6909119B2 (en) | 2001-03-15 | 2005-06-21 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
| US7138291B2 (en) | 2003-01-30 | 2006-11-21 | Cree, Inc. | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
| US7262434B2 (en) | 2002-03-28 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor device with a silicon carbide substrate and ohmic metal layer |
| US7473929B2 (en) | 2003-07-02 | 2009-01-06 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
| JP2006086361A (ja) * | 2004-09-16 | 2006-03-30 | Stanley Electric Co Ltd | 半導体発光素子及びその製造方法 |
| US8367510B2 (en) * | 2005-09-14 | 2013-02-05 | Central Research Institute Of Electric Power Industry | Process for producing silicon carbide semiconductor device |
| US20100237385A1 (en) * | 2008-06-26 | 2010-09-23 | Sanken Electric Co., Ltd. | Semiconductor device and method of fabricating the same |
| KR101220407B1 (ko) | 2010-12-14 | 2013-01-21 | (재)한국나노기술원 | 반도체 발광 소자 |
| JP5811829B2 (ja) | 2011-12-22 | 2015-11-11 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP5742712B2 (ja) | 2011-12-29 | 2015-07-01 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6253133B2 (ja) * | 2012-04-27 | 2017-12-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| US9496366B2 (en) | 2013-10-08 | 2016-11-15 | Shindengen Electric Manufacturing Co., Ltd. | Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film |
| JP7135443B2 (ja) * | 2018-05-29 | 2022-09-13 | 富士電機株式会社 | 炭化ケイ素半導体装置及びその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
| JP3303530B2 (ja) * | 1994-06-23 | 2002-07-22 | 富士電機株式会社 | 炭化けい素半導体素子の製造方法 |
| JPH08139053A (ja) * | 1994-11-04 | 1996-05-31 | New Japan Radio Co Ltd | ＳｉＣへの電極の形成方法 |
| JP3333896B2 (ja) * | 1995-09-13 | 2002-10-15 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| WO1998037584A1 (en) * | 1997-02-20 | 1998-08-27 | The Board Of Trustees Of The University Of Illinois | Solid state power-control device using group iii nitrides |
-
1999
- 1999-09-16 EP EP99951484A patent/EP1125320A1/en not_active Ceased
- 1999-09-16 TW TW088116007A patent/TW449932B/zh not_active IP Right Cessation
- 1999-09-16 JP JP2000570823A patent/JP4785249B2/ja not_active Expired - Lifetime
- 1999-09-16 KR KR1020017002942A patent/KR100694681B1/ko not_active Expired - Lifetime
- 1999-09-16 CA CA002343416A patent/CA2343416A1/en not_active Abandoned
- 1999-09-16 CN CNB998120219A patent/CN1178277C/zh not_active Expired - Lifetime
- 1999-09-16 WO PCT/US1999/021475 patent/WO2000016382A1/en not_active Ceased
- 1999-09-16 MX MXPA01002751A patent/MXPA01002751A/es active IP Right Grant
- 1999-09-16 AU AU63916/99A patent/AU6391699A/en not_active Abandoned
-
2011
- 2011-05-13 JP JP2011108544A patent/JP2011151428A/ja active Pending