JP2002508883A - プラズマ加工装置 - Google Patents
プラズマ加工装置Info
- Publication number
- JP2002508883A JP2002508883A JP50661299A JP50661299A JP2002508883A JP 2002508883 A JP2002508883 A JP 2002508883A JP 50661299 A JP50661299 A JP 50661299A JP 50661299 A JP50661299 A JP 50661299A JP 2002508883 A JP2002508883 A JP 2002508883A
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- power supply
- plasma
- transformer
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 室、プラズマ誘起のためのアンテナ、および該アンテナに該アンテナの終 端から電力を供給するための交流供給手段、から成るプラズマ加工装置で あって、前記電力供給手段が前記アンテナの両終端において実質的に18 0°位相のずれた入力を与えることを特徴とする、プラズマ加工装置。 2. 前記電力供給手段が、電源と該電源によって電力供給される変圧器とを有 し、また前記アンテナが、前記変圧器の二次巻き線の少なくとも一部の両 端に接続されており、前記二次巻き線のタップが、前記アンテナがその両 終端の中間で事実上接地されるように接地されることを特徴とする、請求 項1記載の装置。 3. 前記電力供給手段が、前記アンテナのそれぞれの入力に接続された別々の 電源を有することを特徴とする、請求項1記載の装置。 4. 前記電源が、位相保持ループで結合され、電源の他の電源に対する位相ず れが維持されるようになっていることを特徴とする、請求項3記載の装置 。 5. それぞれの整合回路が、電源とそれに属するそれぞれのアンテナ終端との 間に置かれることを特徴とする、請求項3または4記載の装置。 6. 前記電力供給手段が、電源、変圧器、および整合回路を有し、前記アンテ ナが両端の中間で接地されることを特徴とする、請求項1記載の装置。 7. 電力供給手段が、プラズマのインピータンスを電源の出力インピーダンス に整合させるための可変整合回路を有し、それによって、実質的に180 °の位相ずれ入力が実現されることを特徴とする、請求項1記載の装置。 8. 室、プラズマを誘起するためのアンテナ、および交流電力供給手段を有す るプラズマ加工装置であって、前記電力供給手段が前記アンテナの両終端 の中間で仮想的または事実上の接地を誘起することを特徴とするプラズマ 加工装置。 9. 室、該室内にプラズマを誘起するためのアンテナ、および該アンテナに電 力供給するための交流供給手段から成るプラズマ加工装置であって、前記 電力供給手段が電源と該電源によって電力供給される変圧器とを有し、ま た前記アンテナが前記変圧器の二次巻き線の少なくとも一部の両端に接続 され、前記二次巻き線のタップが、前記アンテナが該アンテナの両終端の 中間において事実上接地されるように、接地されることを特徴とするプラ ズマ加工装置。 10. 前記アンテナがその両終端の中点またはその近傍で事実上接地されるこ とを特徴とする、請求項1から9の中のいずれか1つに記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9714142.8A GB9714142D0 (en) | 1997-07-05 | 1997-07-05 | An arrangement for the feeding of RF power to one or more antennae |
GB9714142.8 | 1997-07-05 | ||
PCT/GB1998/001769 WO1999001887A1 (en) | 1997-07-05 | 1998-07-06 | Plasma processing apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002508883A true JP2002508883A (ja) | 2002-03-19 |
JP4646272B2 JP4646272B2 (ja) | 2011-03-09 |
Family
ID=10815381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50661299A Expired - Lifetime JP4646272B2 (ja) | 1997-07-05 | 1998-07-06 | プラズマ加工装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6239404B1 (ja) |
EP (1) | EP0995219A1 (ja) |
JP (1) | JP4646272B2 (ja) |
KR (1) | KR100440236B1 (ja) |
GB (1) | GB9714142D0 (ja) |
WO (1) | WO1999001887A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002534795A (ja) * | 1999-01-07 | 2002-10-15 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | プラズマエッチング装置 |
JP2007529091A (ja) * | 2004-02-20 | 2007-10-18 | エフ イー アイ カンパニ | 集束イオンビームシステム用磁気増幅式誘導結合プラズマ源 |
JP2012074200A (ja) * | 2010-09-28 | 2012-04-12 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2012074464A (ja) * | 2010-09-28 | 2012-04-12 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2020039533A1 (ja) * | 2018-08-23 | 2020-02-27 | 三菱電機株式会社 | 生体センサ装置 |
JP2020535625A (ja) * | 2017-10-13 | 2020-12-03 | ユ−ジーン テクノロジー カンパニー.リミテッド | Icpアンテナ及びプラズマ装置 |
Families Citing this family (34)
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US7041224B2 (en) | 1999-10-26 | 2006-05-09 | Reflectivity, Inc. | Method for vapor phase etching of silicon |
US6949202B1 (en) | 1999-10-26 | 2005-09-27 | Reflectivity, Inc | Apparatus and method for flow of process gas in an ultra-clean environment |
US6290864B1 (en) | 1999-10-26 | 2001-09-18 | Reflectivity, Inc. | Fluoride gas etching of silicon with improved selectivity |
US6402301B1 (en) | 2000-10-27 | 2002-06-11 | Lexmark International, Inc | Ink jet printheads and methods therefor |
JP4889144B2 (ja) * | 2000-10-31 | 2012-03-07 | アプライド マテリアルズ インコーポレイテッド | 成膜方法 |
US7189332B2 (en) | 2001-09-17 | 2007-03-13 | Texas Instruments Incorporated | Apparatus and method for detecting an endpoint in a vapor phase etch |
US6876155B2 (en) * | 2002-12-31 | 2005-04-05 | Lam Research Corporation | Plasma processor apparatus and method, and antenna |
KR100964398B1 (ko) * | 2003-01-03 | 2010-06-17 | 삼성전자주식회사 | 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치 |
US7645704B2 (en) | 2003-09-17 | 2010-01-12 | Texas Instruments Incorporated | Methods and apparatus of etch process control in fabrications of microstructures |
JP4913599B2 (ja) | 2003-10-17 | 2012-04-11 | エフ・イ−・アイ・カンパニー | 帯電粒子抽出デバイスおよびその設計方法 |
JP2006080620A (ja) * | 2004-09-07 | 2006-03-23 | Niigata Seimitsu Kk | Vhf帯受信機 |
US7459899B2 (en) * | 2005-11-21 | 2008-12-02 | Thermo Fisher Scientific Inc. | Inductively-coupled RF power source |
JP4864488B2 (ja) * | 2006-02-28 | 2012-02-01 | 住友精密工業株式会社 | プラズマ反応装置 |
EP2041756B1 (en) | 2006-07-14 | 2015-05-13 | FEI Company | A multi-source plasma focused ion beam system |
JP5118354B2 (ja) * | 2007-02-19 | 2013-01-16 | 三菱重工業株式会社 | 真空処理装置および真空処理装置を用いた製膜方法 |
US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
US9288886B2 (en) | 2008-05-30 | 2016-03-15 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
US8222822B2 (en) | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
EP2341525B1 (en) | 2009-12-30 | 2013-10-23 | FEI Company | Plasma source for charged particle beam system |
US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
EP2552340A4 (en) | 2010-03-31 | 2015-10-14 | Univ Colorado State Res Found | PLASMA DEVICE WITH LIQUID GAS INTERFACE |
CA2794895A1 (en) | 2010-03-31 | 2011-10-06 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
WO2012031049A2 (en) | 2010-08-31 | 2012-03-08 | Fei Company | Navigation and sample processing using an ion source containing both low-mass and high-mass species |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
CN110800378B (zh) * | 2017-06-27 | 2021-12-28 | 佳能安内华股份有限公司 | 等离子体处理装置 |
CN114666965A (zh) | 2017-06-27 | 2022-06-24 | 佳能安内华股份有限公司 | 等离子体处理装置 |
PL3648550T3 (pl) | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Urządzenie do przetwarzania plazmowego |
PL3648554T3 (pl) | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Urządzenie do przetwarzania plazmowego |
EP3648552B1 (en) | 2017-06-27 | 2022-04-13 | Canon Anelva Corporation | Plasma treatment device |
WO2020003557A1 (ja) | 2018-06-26 | 2020-01-02 | キヤノンアネルバ株式会社 | プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02177429A (ja) * | 1988-09-15 | 1990-07-10 | Lam Res Corp | プラズマエッチングシステムの分相駆動装置 |
JPH0327120U (ja) * | 1989-07-26 | 1991-03-19 | ||
JPH056799A (ja) * | 1991-06-27 | 1993-01-14 | Yokogawa Electric Corp | Icp用rf電源装置 |
JPH0774115A (ja) * | 1993-03-06 | 1995-03-17 | Tokyo Electron Ltd | プラズマ処理装置 |
US5573595A (en) * | 1995-09-29 | 1996-11-12 | Lam Research Corporation | Methods and apparatus for generating plasma |
JPH08330286A (ja) * | 1995-06-01 | 1996-12-13 | Dainippon Screen Mfg Co Ltd | プラズマ処理装置 |
US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
JP2001503554A (ja) * | 1996-03-27 | 2001-03-13 | マティリアルズ リサーチ コーポレイション | プラズマ発生方法、および誘導結合されたプラズマ発生源を含むプラズマ発生装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3016821B2 (ja) * | 1990-06-15 | 2000-03-06 | 東京エレクトロン株式会社 | プラズマ処理方法 |
US5683539A (en) * | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Inductively coupled RF plasma reactor with floating coil antenna for reduced capacitive coupling |
US5565074A (en) * | 1995-07-27 | 1996-10-15 | Applied Materials, Inc. | Plasma reactor with a segmented balanced electrode for sputtering process materials from a target surface |
US5965034A (en) * | 1995-12-04 | 1999-10-12 | Mc Electronics Co., Ltd. | High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced |
-
1997
- 1997-07-05 GB GBGB9714142.8A patent/GB9714142D0/en active Pending
-
1998
- 1998-07-06 KR KR10-1999-7012422A patent/KR100440236B1/ko not_active IP Right Cessation
- 1998-07-06 US US09/462,147 patent/US6239404B1/en not_active Expired - Lifetime
- 1998-07-06 EP EP98932275A patent/EP0995219A1/en not_active Withdrawn
- 1998-07-06 WO PCT/GB1998/001769 patent/WO1999001887A1/en not_active Application Discontinuation
- 1998-07-06 JP JP50661299A patent/JP4646272B2/ja not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02177429A (ja) * | 1988-09-15 | 1990-07-10 | Lam Res Corp | プラズマエッチングシステムの分相駆動装置 |
JPH0327120U (ja) * | 1989-07-26 | 1991-03-19 | ||
JPH056799A (ja) * | 1991-06-27 | 1993-01-14 | Yokogawa Electric Corp | Icp用rf電源装置 |
JPH0774115A (ja) * | 1993-03-06 | 1995-03-17 | Tokyo Electron Ltd | プラズマ処理装置 |
US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
JPH08330286A (ja) * | 1995-06-01 | 1996-12-13 | Dainippon Screen Mfg Co Ltd | プラズマ処理装置 |
US5573595A (en) * | 1995-09-29 | 1996-11-12 | Lam Research Corporation | Methods and apparatus for generating plasma |
JPH10510095A (ja) * | 1995-09-29 | 1998-09-29 | ラム リサーチ コーポレイション | プラズマ発生方法及び装置 |
JP2001503554A (ja) * | 1996-03-27 | 2001-03-13 | マティリアルズ リサーチ コーポレイション | プラズマ発生方法、および誘導結合されたプラズマ発生源を含むプラズマ発生装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002534795A (ja) * | 1999-01-07 | 2002-10-15 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | プラズマエッチング装置 |
JP2007529091A (ja) * | 2004-02-20 | 2007-10-18 | エフ イー アイ カンパニ | 集束イオンビームシステム用磁気増幅式誘導結合プラズマ源 |
JP2012074200A (ja) * | 2010-09-28 | 2012-04-12 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2012074464A (ja) * | 2010-09-28 | 2012-04-12 | Tokyo Electron Ltd | プラズマ処理装置 |
US9218943B2 (en) | 2010-09-28 | 2015-12-22 | Toyko Electron Limited | Plasma processing apparatus and plasma processing method |
US9627181B2 (en) | 2010-09-28 | 2017-04-18 | Tokyo Electron Limited | Plasma processing apparatus |
JP2020535625A (ja) * | 2017-10-13 | 2020-12-03 | ユ−ジーン テクノロジー カンパニー.リミテッド | Icpアンテナ及びプラズマ装置 |
WO2020039533A1 (ja) * | 2018-08-23 | 2020-02-27 | 三菱電機株式会社 | 生体センサ装置 |
WO2020039941A1 (ja) * | 2018-08-23 | 2020-02-27 | 三菱電機株式会社 | 生体センサ装置 |
JPWO2020039941A1 (ja) * | 2018-08-23 | 2021-01-07 | 三菱電機株式会社 | 生体センサ装置 |
CN112566546A (zh) * | 2018-08-23 | 2021-03-26 | 三菱电机株式会社 | 生物体传感器装置 |
CN112566546B (zh) * | 2018-08-23 | 2024-03-08 | 三菱电机株式会社 | 生物体传感器装置 |
US11950885B2 (en) | 2018-08-23 | 2024-04-09 | Mitsubishi Electric Corporation | Biosensor device |
Also Published As
Publication number | Publication date |
---|---|
WO1999001887A1 (en) | 1999-01-14 |
KR100440236B1 (ko) | 2004-07-15 |
US6239404B1 (en) | 2001-05-29 |
KR20010014293A (ko) | 2001-02-26 |
EP0995219A1 (en) | 2000-04-26 |
JP4646272B2 (ja) | 2011-03-09 |
GB9714142D0 (en) | 1997-09-10 |
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