JP2002359376A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法

Info

Publication number
JP2002359376A
JP2002359376A JP2002089062A JP2002089062A JP2002359376A JP 2002359376 A JP2002359376 A JP 2002359376A JP 2002089062 A JP2002089062 A JP 2002089062A JP 2002089062 A JP2002089062 A JP 2002089062A JP 2002359376 A JP2002359376 A JP 2002359376A
Authority
JP
Japan
Prior art keywords
insulating film
electrode
film
wiring
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002089062A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002359376A5 (enExample
Inventor
Akira Tsunoda
朗 角田
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002089062A priority Critical patent/JP2002359376A/ja
Priority to US10/125,790 priority patent/US6982194B2/en
Publication of JP2002359376A publication Critical patent/JP2002359376A/ja
Publication of JP2002359376A5 publication Critical patent/JP2002359376A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2002089062A 2001-03-27 2002-03-27 半導体装置及びその作製方法 Withdrawn JP2002359376A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002089062A JP2002359376A (ja) 2001-03-27 2002-03-27 半導体装置及びその作製方法
US10/125,790 US6982194B2 (en) 2001-03-27 2002-04-19 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-91493 2001-03-27
JP2001091493 2001-03-27
JP2002089062A JP2002359376A (ja) 2001-03-27 2002-03-27 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2002359376A true JP2002359376A (ja) 2002-12-13
JP2002359376A5 JP2002359376A5 (enExample) 2005-09-08

Family

ID=26612276

Family Applications (1)

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JP2002089062A Withdrawn JP2002359376A (ja) 2001-03-27 2002-03-27 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2002359376A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7078322B2 (en) 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
JP2007173767A (ja) * 2005-10-03 2007-07-05 Seiko Epson Corp 半導体装置および半導体装置の製造方法
US7541614B2 (en) 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
US8034674B2 (en) 2007-06-29 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance
WO2011142081A1 (ja) * 2010-05-12 2011-11-17 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
JP2015084430A (ja) * 2009-07-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP2017022358A (ja) * 2015-03-18 2017-01-26 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017037301A (ja) * 2015-08-07 2017-02-16 株式会社半導体エネルギー研究所 表示パネルおよびその作製方法
JP2017103486A (ja) * 2010-02-05 2017-06-08 株式会社半導体エネルギー研究所 半導体装置
JP2019041122A (ja) * 2014-02-05 2019-03-14 株式会社半導体エネルギー研究所 半導体装置
US10510777B2 (en) 2010-04-09 2019-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517773B2 (en) 2001-11-29 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
US7078322B2 (en) 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
US7541614B2 (en) 2003-03-11 2009-06-02 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
US7858985B2 (en) 2003-03-11 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
US8049219B2 (en) 2003-03-11 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
JP2007173767A (ja) * 2005-10-03 2007-07-05 Seiko Epson Corp 半導体装置および半導体装置の製造方法
US8034674B2 (en) 2007-06-29 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance
US8426945B2 (en) 2007-06-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic appliance
JP2015084430A (ja) * 2009-07-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
TWI669826B (zh) * 2010-02-05 2019-08-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US11101295B2 (en) 2010-02-05 2021-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12113074B2 (en) 2010-02-05 2024-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11749686B2 (en) 2010-02-05 2023-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11469255B2 (en) 2010-02-05 2022-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2017103486A (ja) * 2010-02-05 2017-06-08 株式会社半導体エネルギー研究所 半導体装置
US9991288B2 (en) 2010-02-05 2018-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2018201058A (ja) * 2010-02-05 2018-12-20 株式会社半導体エネルギー研究所 半導体装置
US10615179B2 (en) 2010-02-05 2020-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10510777B2 (en) 2010-04-09 2019-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10879274B2 (en) 2010-04-09 2020-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011142081A1 (ja) * 2010-05-12 2011-11-17 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
US8525178B2 (en) 2010-05-12 2013-09-03 Panasonic Corporation Flexible semiconductor device and method for producing the same
JP5719992B2 (ja) * 2010-05-12 2015-05-20 パナソニックＩｐマネジメント株式会社 フレキシブル半導体装置およびその製造方法
JP2019041122A (ja) * 2014-02-05 2019-03-14 株式会社半導体エネルギー研究所 半導体装置
JP2017022358A (ja) * 2015-03-18 2017-01-26 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017037301A (ja) * 2015-08-07 2017-02-16 株式会社半導体エネルギー研究所 表示パネルおよびその作製方法

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