JP2002359246A5

JP2002359246A5 -

Info

Publication number: JP2002359246A5
Application number: JP2002089262A
Authority: JP
Filing date: 2002-03-27
Publication date: 2005-09-08
Anticipated expiration: 2022-03-27

Claims

A first conductive layer having a first width, the second conductive layer first have a second width narrower than the width as a main component Al, narrow third than the second width A laminated structure with a third conductive layer having a width;
The second conductive layer has a lower resistance than the first conductive layer and the third conductive layer;
The wiring characterized in that a cross-sectional shape of at least an end portion of the second conductive layer among the first conductive layer , the second conductive layer , and the third conductive layer is a tapered shape.

2. The wiring according to claim 1, wherein the first conductive layer is a conductive layer mainly composed of W or Mo.

According to claim 1 or claim 2, wherein the third conductive layer is a wiring which is a conductive layer shall be the main component Ti.

3. The wiring according to claim 1 , wherein the third conductive layer is a conductive layer made of titanium nitride .

In any one of claims 1 to 4, wherein the first conductive layer and not in contact with the third conductive layer portion of the second conductive layer wiring, characterized in that it is oxidized.

6. The wiring according to claim 1, wherein the wiring is used for a liquid crystal display device or a light emitting device.

A wiring board in which the wiring according to claim 1 is formed on a board.

On the insulating surface, a first conductive layer, a second conductive layer containing Al as a main component, and a third conductive layer are stacked and formed.
A resist mask having a predetermined shape is formed on the third conductive layer, and after etching the first conductive layer, the second conductive layer, and the third conductive layer,
The second conductive layer and the third conductive layer are etched without removing the resist mask, and a first conductive layer having a first width and a second narrower than the first width . a second conductive layer, the third method for manufacturing a wiring for forming the conductive layer ing a lamination of a conductive layer having a narrower third width than the second width having a width,
The first conductive layer having a first width, the second conductive layer having a second width, the third conductive at least the end portion of the second conductive layer of the layer having a third width the method for manufacturing a wiring cross-sectional shape and wherein Rukoto is etched so as to taper in.

On the insulating surface, a first conductive layer, a second conductive layer containing Al as a main component, and a third conductive layer are stacked and formed.
Forming a resist mask having a predetermined shape on the third conductive layer, etching the second conductive layer and the third conductive layer;
After etching the first conductive layer without removing the resist mask ,
The second conductive layer and the third conductive layer are etched without removing the resist mask, and a first conductive layer having a first width and a second narrower than the first width . a second conductive layer, the third method for manufacturing a wiring for forming the conductive layer ing a lamination of a conductive layer having a narrower third width than the second width having a width,
The first conductive layer having a first width, the second conductive layer having a second width, the third conductive at least the end portion of the second conductive layer of the layer having a third width the method for manufacturing a wiring cross-sectional shape and wherein Rukoto is etched so as to taper in.

On the insulating surface, a first conductive layer, a second conductive layer containing Al as a main component, and a third conductive layer are stacked and formed.
A resist mask having a predetermined shape is formed on the third conductive layer, and after etching the first conductive layer, the second conductive layer, and the third conductive layer,
The second conductive layer and the third conductive layer are etched without removing the resist mask, and a first conductive layer having a first width and a second narrower than the first width . a second conductive layer having a width of, forming a conductive layer ing a lamination of a third conductive layer having the narrower than the second width third width,
By performing flop plasma processing, the second conductive layer having the second width, not in contact with the third conductive layer having the first conductive layer and the third width having a first width A method of manufacturing a wiring that oxidizes a portion ,
The first conductive layer having a first width, the second conductive layer having a second width, the third conductive at least the end portion of the second conductive layer of the layer having a third width the method for manufacturing a wiring cross-sectional shape and wherein Rukoto is etched so as to taper in.

On the insulating surface, a first conductive layer, a second conductive layer containing Al as a main component, and a third conductive layer are stacked and formed.
Forming a resist mask having a predetermined shape on the third conductive layer, etching the second conductive layer and the third conductive layer;
After etching the first conductive layer without removing the resist mask ,
The second conductive layer and the third conductive layer are etched without removing the resist mask, and a first conductive layer having a first width and a second narrower than the first width . a second conductive layer having a width of, forming a conductive layer ing a lamination of a third conductive layer having the narrower than the second width third width,
By performing flop plasma processing, the second conductive layer having the second width, not in contact with the third conductive layer having the first conductive layer and the third width having a first width A method of manufacturing a wiring that oxidizes a portion ,
The first conductive layer having a first width, the second conductive layer having a second width, the third conductive at least the end portion of the second conductive layer of the layer having a third width the method for manufacturing a wiring cross-sectional shape and wherein Rukoto is etched so as to taper in.

According to claim 10 or claim 11, wherein the plasma treatment is a method for manufacturing a wiring, characterized in that it is performed using a gas or H ₂ O, whose main component is oxygen or oxygen.

In any one of claims 8 to 12, wherein the method for manufacturing a wiring conductive layer, characterized in Rukoto formed mainly composed of W or Mo as the first conductive layer.

In any one of claims 8 to 13, the third is the conductive layer conductive layer shall be the main component Ti as the forming method for manufacturing a wiring wherein Rukoto.

In any one of claims 8 to 13, the third is a conductive layer made of titanium nitride as a conductive layer formation method for manufacturing a wiring wherein Rukoto.