TW201128707A - Active device array substrate and fabricating method thereof - Google Patents

Abstract

An active device array substrate includes a substrate and at least one patterned multiple metal layer. The patterned multiple metal layer is disposed on the substrate, wherein the patterned multiple metal layer at least includes a copper layer. The patterned multiple metal layer is formed by etching with an etchant, wherein the etchant includes an oxidant, a pH value adjuster and a metal ion chelating agent. A cross-section of the patterned multiple metal layer which is perpendicular to the substrate is a trapezoid, and a base angle of the trapezoid is less than 60 DEG C.

Description

201128707 AU0910118 33470twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to an active device array substrate, and more particularly to an active device array substrate having a copper metal layer. [Prior Art] As the size of the thin film transistor liquid crystal display (TFT_LCD) panel becomes larger and larger, the resistance of the metal wire is not sufficiently low, and the resistance of the resistor (RC) is delayed, thereby causing the signal to be transmitted. Distortion distortion is generated, which affects the appearance of panel enamel. The use of copper metal with low resistance to form metal wires can effectively reduce the Rc delay effect. At the same time, a molybdenum layer is required between the copper layer and the substrate to prevent copper ions from diffusing into the substrate. However, after the two-layer structure of the copper layer and the molybdenum layer, there is often a problem that the taper angle is too high, that is, greater than 6 〇, the critical dimension error (criticd (CD) bias) is too large, and the molybdenum layer is undercut. . SUMMARY OF THE INVENTION The present invention provides an active device array substrate having better electrical performance. The present invention provides a method of fabricating an active device array substrate, which can avoid problems such as defects or open circuits of a post-process film. The present invention provides an active device array substrate 'which includes a substrate and at least one patterned multilayer metal layer. The patterned multilayer metal layer is disposed on the substrate, wherein the patterned multilayer metal layer comprises at least a copper layer. Patterned multi-layer gold 201128707 lulls 33470twf.doc/n 2 Engraved, the smoke liquid is an ion-raising agent. Patterning 2 = The profile is trapezoidal and the base angle of the trapezoid is less than 6〇. . «Straight substrate The following Π Π — - the production method of the active board, including the psychedelic steps. First, provide the substrate with a multi-layered pattern; _ mu * Touching the secret to form a picture The engraved multi-layer metal layer is made of button engraving (four), rhyme ::. The metal layer of the layer is trapezoidal in the cross section of the vertical substrate, and the bottom of the trapezoid is included. In the embodiment, the patterned multi-layer metal layer further includes the first metal layer and the second metal layer, and the copper layer Between the metal layer and the first metal layer, the first metal layer and the second metal layer are, for example, titanium, titanium, molybdenum nitride, titanium nitride, nitrided, key alloy, titanium alloy or alloy. In one embodiment of the invention, the thickness of the copper layer is, for example, =1 00 Å to 6,000 Å, and the thickness of the first metal layer and the second metal layer is, for example, 100 Å to 500 Å. In an embodiment of the invention, the base angle of the trapezoid is, for example, 25 . To 45. . In one embodiment of the invention, the oxidizing agent is, for example, hydrogen peroxide, potassium persulfate (KHS05), copper chloride (CuCl2) or ferric chloride (peci3). In one embodiment of the present invention, the above-mentioned metal ion chelating agent such as lanthanum, oxalic acid, ethylenediaminetetraacetic acid (ethylenediaminetetraacetic 201128707 AU0910118 33470twf.doc/n acid, EDTA) or trans-cyclohexene Cyclohexanedinitrilotetraacetic acid (CDTA). In an embodiment of the invention, the etchant has a pH of, for example, less than 6. Based on the above, in the active device array substrate proposed by the present invention, since the patterned multilayer metal layer is trapezoidal in the cross section of the vertical substrate, the trapezoid has a bottom angle of less than 60. Therefore, the active device array substrate can have better electrical performance. Further, by the method for fabricating the active device array substrate proposed by the present invention, it is possible to produce a trapezoidal cross-sectional angle of less than 6 Å in the vertical substrate. The patterned multi-layer metal layer can avoid problems such as the lack of subsequent process films. The above features and advantages of the present invention will become more apparent from the description of the embodiments. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1E is a cross-sectional view showing the manufacturing process of an active cell substrate in accordance with an embodiment of the present invention. Figure 2 is all sound "The patterning multilayer direction in Figure 1c is perpendicular to the cross-sectional direction of Figure lc. I, the section of Figure 2 is first, please refer to Figure 1A first, mention = transparent material, opaque material, can be "= = Next, a closed pole is formed on the substrate_. The impurity formation method is, for example, 5 201128707 Λυυ>ιυΐι8 33470twf.doc/n 疋 etching to form a patterned multilayer metal layer 1〇2 as a gate electrode. , the patterned multi-layer metal layer 1〇2 includes at least a copper layer leg. In the present embodiment, the patterned multilayer metal layer 1〇2 may include a metal layer, ι 2, in addition to the copper layer pupil. The metal layer is located on the substrate (10) and the copper layer 102b is located between the metal layer 1〇2a and the metal layer. The gold layer 102a, lG2e are, for example, platinum, titanium, indium, indium nitride, nitride

f, nitride, indium alloy, titanium alloy or Shao alloy. The thickness of the copper layer 102b is, for example, between 1000 Å and 6 Å, and the thickness of the metal layer is, for example, between 100 Å and 5 Å, respectively. X b , outside, the patterned multilayer metal layer 1 〇 2 is perpendicular to the cross section of the substrate 〇〇 ; ; ^ and the base angle 0 1 of the trapezoid is less than 6 〇. . The base angle 0 1 of the trapezoid is, for example, Β / to 45. It should be noted that in the embodiment, the so-called trapezoidal sum (SUbStantially) is trapezoidal, that is, as long as it is in the embodiment, it belongs to the lion. In addition, here is the actual angle). The bottom angle is what is known as the "tilt angle (_er 2: package == case: used in the process of the multilayer metal layer 102, Weng #4, 驮 alkalinity modifier and metal ion chelating agent. The metal ion is, for example, Wei water, potassium persulfate, chloro can or iron oxide. The ring agent is, for example, citric acid, oxalic acid, ethylenediaminetetraacetic acid or reverse - such as less than t tetraacid. Further, the _ liquid is an acidic solution, The acid value is exemplified to form a dielectric layer ι 4 on the substrate 1 〇 0, and the multilayer metal layer is removed. The dielectric layer forming method is an example of the method 201128707 AU0910118 33470hvf.d〇c/n The vapor deposition method (chemica) (10), CVD, or other suitable thin film deposition techniques, but is not limited thereto. The dielectric layer 104 may be a single layer structure or a multilayer structure, and the materials thereof are, for example, inorganic materials, other materials. The electrical material, or a combination thereof, is described by taking the oxygen-cut, nitrogen- or oxynitride electrical material as an example.

Next, a channel layer 1G6 and a contact layer (10) which are stacked are formed on the dielectric layer 4 above the patterned multilayer metal layer 1〇2. The θ channel layer 106 and the ohmic contact layer should be, for example, semiconductor layers having different doping unequalities. The formation method of the channel layer 1G6 and the ohmic contact layer (10) is formed, for example, by a suitable deposition method and patterning method, and will not be described herein. Thereafter, referring to FIG. ic, a patterned multilayer metal layer 110 as a source and a drain is formed over the channel layer 106 on both sides of the patterned multilayer metal layer 1〇2, and a patterned multilayer metal layer 11 is formed. A portion of the ohmic contact layer rain can then be moved to form an ohmic contact layer inspection. The source and the dies are formed, for example, by patterning the multilayer metal layer 110 as a secret and a finite electrode. Its towel, ugly metal layer ιι〇 to include copper layer ii〇b. In the present embodiment, the patterned multi-layer metal layer 11〇, in addition to the copper layer 11Gb, may further include metal layers n()a, u〇c, the metal layer 110a is located in the ohmic contact layer 108a, and the copper layer is (9) Located between the metal layer 11a and the metal layer 110c. The metal layers u〇a, u〇c are, for example, molybdenum, titanium, aluminum, molybdenum nitride, titanium nitride, aluminum nitride, molybdenum alloy, titanium alloy or alloy. The thickness of the copper layer U〇b is, for example, 丨_Å to 6 Å, and the thickness of the metal layers 110a, 110c is, for example, _201128707 -...w v 118 33470 twf.d〇c/n Å to 500 Å, respectively. Further, please - and referring to Fig. 2, the edge of the patterned multilayer metal layer 11 turns is trapezoidal in the cross section of the vertical substrate, and the bottom angle Θ 2 of the trapezoid is less than 60. . The base angle 0 2 of the ladder > is, for example, 25. To 45. . In addition, the surname used in the process of forming the patterned multi-layer metal layer n〇 includes an oxidizing agent, an acidity adjusting agent and a metal ion. Oxidizing agents such as technical oxygen water, potassium persulfate, vaporized copper or ferric chloride. The genus ion chelating coffee is citric acid, oxalic acid, ethylenediaminetetraacetic acid or trans-acid. In addition, the liquid solution is an acidic solution, and the acid value of the sample body (1) includes a two-electrode contact layer and a patterned multi-layer metal layer: (for =:; two forms a protection case in the metal layer 110 as a non-polar portion In the above, the drawing may be an early layer structure, and the enamel material, other dielectric materials, or the above-mentioned two materials 枓, organic materials, such as 峨 峨 峨 卿 在 在 在 在 在 在 在Composite material ^; ^ 2 emulsion phase deposition method comprehensive (four) material layer for "external money touch protection · After, please refer to Figure 1 Ε, formed on the protective layer m 2011 _ 201128707 AU0910118 33470twf.doc / n US 'and 昼 素 118 The pattern electrode 118, which is a portion of the multi-layer metal layer 110 in the multi-layer metal layer 110 by the opening 116 and the thin film, may be a single-layer structure or a multi-layer structure, and may be a semiconductor material, a non-transparent material, or a combination thereof. The transparent material of the transparent material and/or the indium oxide is described as an example, and the method of forming the halogen electrode 118 is, for example, by the method of

The m is formed on the halogen electrode layer (not shown), and then formed on the halogen electrode layer. It can be seen from the above embodiments that the patterned multilayer metal layers 1〇2 and u〇 having a bottom angle of a trapezoidal cross section of a vertical substrate can be made by the active device_substrate method, thereby preventing the second case. The multi-layer metal layer lG2, ll 〇 produces problems such as excessive tilt angle, excessive critical dimension, and bottom-open (four) (four) 'into-free process _ defect open circuit. The following is a detailed description of the mechanism for patterning the multilayer metal layer to have a trapezoidal angle of less than 60° in the vertical substrate 丨 (9) by patterning the multilayer metal layer 1〇2. & Figs. 3A to 3C are views for explaining that the base angle of the trapezoidal cross section of the patterned multilayered metal layer 1〇2 is less than 00. A cross-sectional view of the mechanism of action.同时In the process of forming the patterned multilayer metal layer 102 through the squeegee 3A to FIG. 30, the copper layer 沘 and the metal layer 102c under the photoresist layer 12 同时 simultaneously contact the surname liquid 122, due to copper The layer has a different oxidation-reduction potential from the metal layer 102c, and thus a galvanic effect is generated. For example, when the material of the metal layer 1〇2c is molybdenum 201128707 r\\j\jy ιό 118 33470twf.doc/n, since the standard reduction potentials of copper and molybdenum are +〇34V and -0.20V, respectively. Therefore, during the etching process, the copper layer 1 sinks to form a cathode and the metal layer 102c forms an anode, thereby accelerating the etching rate. In particular, in the initial stage of etching shown in the figure, the high area ratio of the copper layer 1 〇 25 to the metal layer 1 〇 2c produces an area effect, which further promotes the reaction of the battery effect. Under the effect of the metal pool effect, the critical dimension is fast, due to the base angle of the 4_ layer ^. It should be noted that, in the above embodiments, the method for forming the patterned multilayer metal layer is described by using a gate, a source, and a cathode in the active device array substrate, respectively. limit. That is, as long as the gate, scan line, source, and immersion in the active device array substrate: data line, other metal wires, and other metal electrodes, the method of forming the patterned multilayer metal layer is used. The manufacturing is in the range covered by the manufacturing method of the active device array substrate of the present invention. Hereinafter, an active element array substrate according to an embodiment of the present invention will be described with reference to Fig. 1E. The active device array can be basically applied to an LCD (I'd crystal display, LCD), an organic light emitting diode (OLED), an electronic paper (eiec), other suitable products, or Combination of the above. π Referring to Figure 1E', the active device array substrate includes a substrate 1 and at least one patterned multilayer metal layer. The material of the substrate 1 is, for example, a transparent material, an opaque material, a flexible material, or a combination of the above. The patterned multilayer metal layer in the active device array substrate is, for example, a patterned multilayer metal layer 1 〇 2 used as a gate and a patterned multilayer used as a source and without a 201128707 ru-;u7iwll8 33470 twf.doc/n pole Metal layer 110. The patterned multilayer metal layers 102, 110 include at least copper layers 102b, 110b, respectively. In this embodiment, the patterned multi-layer metal layers 102, 110, in addition to the copper layers 1〇2b and 11b, respectively, may further include metal layers l2a, 102c and metal layers 11a, 11〇, respectively. c,

The copper layer 102b is located between the metal layer 102a and the metal layer 102c, and the copper layer 11b is located between the metal layer i10a and the metal layer 11〇c. The metal layers 1〇2&, l〇2c, ll〇a, ii〇c are, for example, molybdenum, titanium, aluminum, molybdenum nitride, titanium nitride, aluminum nitride, molybdenum alloy, titanium alloy or aluminum alloy, respectively. The thicknesses of the copper layers 1〇2b and n〇b are, for example, 1 〇〇〇 to 6 Å, respectively, and the thicknesses of the metal layers 1〇2a, l〇2c, ll〇a, ll〇c are, for example, respectively. Between 1 〇〇 and 5 〇〇. Wherein, the patterned multilayer metal layers 102, 110 are trapezoidal in the cross section of the vertical substrate, and the bottom corners Θ1 and 02 of the trapezoid are respectively less than 60. . The base angles θ1 and Θ2 of the trapezoid are, for example, 25 each. To 45. . In addition, in the process of forming the patterned multilayer metal layer 1〇2, 11〇, the side liquid package purifying agent, the secret value adjusting agent and the metal ion chelate port ^], wherein the composition of the etching liquid is already The foregoing embodiments are described in detail, and thus will not be described again. The 70-piece array substrate further includes a dielectric layer 104, a channel layer Duim, a contact layer 108a, a protective layer 114, and a halogen electrode 118. However, the arrangement, materials, and formation methods of the components are described above. The examples are described in detail, and therefore will not be described again. In the active device array substrate proposed by the present invention, the bottom corners 01 and Θ2 of the U-layers 2, 110 of the vertical substrate are less than 60, respectively. , thus preventing patterning 11

201128707 R -------118 33470twfdoc/i Multi-layer metal layers 1G2, 11G produce structural defects, and have better electrical performance 0 although 'the patterned multi-layer metal layer in this embodiment is taken as active, column The gate and source in the substrate are described as an example, but any of the gate, scan line, source, immersion, data line, octa metal wire, and other metal electrodes in the active array substrate - The bottom angle of the trapezoidal section of the vertical substrate is less than 6 〇. The patterned multilayer metal layer is within the scope of the present invention.

In summary, the above embodiment has at least the following advantages: L. Manufacturing method of the above-mentioned active device array substrate. Problems such as defects or disconnection of the film. 2. The above active device array substrate has better electrical performance. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the scope of the present invention, and it is possible to make some changes and (4) without departing from the spirit and scope of the present invention. The scope of protection of the present invention is subject to the definition of the accompanying towel material.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1E are cross-sectional views showing a manufacturing process of an active device array substrate according to an embodiment of the present invention. Figure 2 is a cross-sectional view of the Figure ic along the other cross-sectional direction, wherein the cross-sectional direction of Figure 2 is perpendicular to the cross-sectional direction of Figure 1C. From Fig. 3C, the bottom angle of the trapezoidal cross section of the patterned multilayer metal layer 1〇2 is described as being less than 60. A cross-sectional view of the mechanism of action.乂12 201128707 ιυ i 18 33470twf.doc/n [Description of main component symbols] 100: Substrate 102, 110: patterned multilayer metal layers 102a, 102c, 110a, 110c: metal layers 110b, 102b: copper layer 104: dielectric Layer 106: channel layer 108, 108a: ohmic contact layer 112: thin film transistor 114: protective layer 116: opening 118: halogen electrode 120: photoresist layer 122: etching liquid 13

Claims (1)

201128707 -------118 33470twf_doc/n Seven patent application scope L - an active device array substrate, comprising: - a substrate; and a materialized multilayer metal layer disposed on the substrate, which is shown in Figure 2 The genus layer includes at least a copper layer, and the patterned multi-layer metal layer is a sputum genus of the genus of the genus (4), which is an acid-value-adjusted genus ion-based mixture, and the s-shaped S-layered metal layer is perpendicular to the substrate. Yes - trapezoid, the base angle of the trapezoid is less than 60. . 2. The active device array substrate according to claim i, wherein the patterned multilayer metal layer further comprises a first metal layer and a second gold metal layer, wherein the copper layer is located in the first metal layer Between the second metal layer and the first metal layer, the first metal layer and the first metal layer are respectively turned over, titanium, indium, molybdenum nitride, titanium nitride, nitrided, turned alloy, titanium alloy or alloy. The wire element array substrate according to claim 2, wherein the copper layer has a thickness of 1000 angstroms to 6000 angstroms, and the first metal layer and the second metal layer have a thickness of 100 angstroms to 500 angstroms. . 4. The active device array substrate according to claim 1, wherein the trapezoid has a bottom angle of 25. To 45. . The active device array substrate according to claim 1, wherein the oxidant is hydrogen peroxide, potassium persulfate (KHS05), vaporized copper (CuCl2) or iron oxide (FeCl3). 6. The active device array substrate according to claim 1, wherein the metal ion chelating agent is citric acid, oxalic acid, ethylenediaminetetraacetic acid (EDTA) or trans-cyclohexenediamine 14 201128707 Αυυ^ιυΐΐδ 33470twf.doc/n tetrahexanedinitrilotetraacetic acid (CDTA). 7. The active device array substrate according to claim 1, wherein the silver inscription has an acidity value of less than 6. 8. The method of fabricating an active device array substrate, comprising: providing a substrate; and etching an etchant to form a patterned multilayer metal layer disposed on the substrate, wherein the patterned multilayer metal layer comprises at least one copper a layered layer of the patterned multi-layer metal layer, the etchant comprising an oxidizing agent, a pH adjusting agent and a metal ion chelating agent, and the patterned multilayer metal layer is perpendicular to the substrate A section is a trapezoid having a base angle of less than 60. . 9. The method of fabricating an active device array substrate according to claim 8, wherein the oxidizing agent is hydrogen peroxide, potassium persulfate (KHS® 5), copper chloride (CuCl 2 ) or ferric chloride (Feci 3 ). 10. The method according to claim 8, wherein the metal ion chelating agent is citric acid, oxalic acid, ethylenediaminetetraacetic add (EDTA) or trans-cyclohexene. CyCl〇hexanedinitrilotetraacetic acid (CDTA). 11. The method of fabricating an active device array substrate as described in claim 8 wherein the etchant has a pH of less than 6. 12. The method of fabricating an active device array substrate according to claim 8, wherein the trapezoid has a bottom angle of 25. To 45. . 15