WO2016155155A1 - Method for manufacturing thin film transistor, thin film transistor, array substrate using same, and display device - Google Patents

Method for manufacturing thin film transistor, thin film transistor, array substrate using same, and display device Download PDF

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WO2016155155A1
WO2016155155A1 PCT/CN2015/084446 CN2015084446W WO2016155155A1 WO 2016155155 A1 WO2016155155 A1 WO 2016155155A1 CN 2015084446 W CN2015084446 W CN 2015084446W WO 2016155155 A1 WO2016155155 A1 WO 2016155155A1
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metal
gate
drain
source
protective layer
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宁策
李明超
张方振
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京东方科技集团股份有限公司
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Priority to US14/911,213 priority Critical patent/US9905580B2/en
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Abstract

A method for manufacturing a thin film transistor, the thin film transistor, an array substrate using same, and a display device relate to the field of display technologies. The method for manufacturing a thin film transistor comprises the following steps: forming a pattern of a grid (2) on an underlying substrate (1); forming a grid insulating layer (6) on the underlying substrate (1); and forming patterns of a source (3) and a drain (4), the source (3) and the drain (4) being located on the grid insulating layer (6); and the method further comprises: forming an anti-oxidation metal protection layer (5) respectively on the surfaces of the grid (2), the source (3) or/and the drain (4).

Description

薄膜晶体管的制作方法、薄膜晶体管及使用其的阵列基板和显示装置Thin film transistor manufacturing method, thin film transistor, array substrate and display device using same
相关申请的交叉参考Cross-reference to related applications
本申请主张2015年4月1日在中国提交的中国专利申请号No.201510152719.1的优先权，其全部内容通过引用包含与此。The present application claims priority to Chinese Patent Application No. 201510152719.1, filed on Jan. 1, 2015, the entire content of
技术领域Technical field
本发明涉及显示技术领域，尤其涉及一种薄膜晶体管的制作方法、该制作方法制得的薄膜晶体管、以及使用该薄膜晶体管的阵列基板和显示装置。The present invention relates to the field of display technologies, and in particular, to a method for fabricating a thin film transistor, a thin film transistor obtained by the method, and an array substrate and a display device using the same.
背景技术Background technique
目前，液晶显示器(Liquid Crystal Display，以下简称LCD)或有机发光二极管显示器(Organic Light Emitting Display，以下简称OLED)相比于阴极射线管(Cathode Ray Tube，以下简称CRT)显示器具有体积小、重量轻、功耗小、色彩鲜艳、图像逼真等优势，因而LCD或OLED在平板显示技术中已经逐步取代CRT显示器，并开始广泛的应用于电视屏幕、手机屏幕、计算机屏幕或笔记本电脑屏幕等。At present, a liquid crystal display (LCD) or an organic light emitting display (hereinafter referred to as OLED) has a small size and light weight compared to a cathode ray tube (CRT) display. The advantages of low power consumption, bright colors, and vivid images make LCD or OLED gradually replace CRT monitors in flat panel display technology, and have begun to be widely used in TV screens, mobile screens, computer screens or laptop screens.
通常，LCD或OLED中设有一块薄膜晶体管(Thin Film Transistor，以下简称TFT)阵列基板。TFT阵列基板包括多个像素单元，每个像素单元对应有一个TFT。TFT作为开关器件用于控制对应的像素单元的状态。通常，大面积和高分辨率的LCD和OLED在使用时要求各个像素单元对应的TFT具有较快的开关速度，因而对TFT中的电极的导电性提出较高的要求。Generally, a Thin Film Transistor (hereinafter referred to as TFT) array substrate is disposed in the LCD or the OLED. The TFT array substrate includes a plurality of pixel units, and each pixel unit corresponds to one TFT. The TFT is used as a switching device for controlling the state of the corresponding pixel unit. Generally, large-area and high-resolution LCDs and OLEDs require the TFTs corresponding to the respective pixel units to have a faster switching speed when used, thereby placing high demands on the conductivity of the electrodes in the TFTs.
目前，TFT中的电极通常采用导电性较好的单质金属作为电极材料。然而，构成TFT中的电极的单质金属在后续的制作工艺中容易被氧化，从而导致TFT中的电极的导电性较差。At present, an electrode in a TFT is usually made of an elemental metal having a good conductivity as an electrode material. However, the elemental metal constituting the electrode in the TFT is easily oxidized in a subsequent fabrication process, resulting in poor conductivity of the electrode in the TFT.
发明内容Summary of the invention
有鉴于此，本发明实施例提供一种TFT的制作方法，用于改善TFT中的电极的导电性。 In view of this, embodiments of the present invention provide a method of fabricating a TFT for improving conductivity of an electrode in a TFT.
为了实现上述目的，根据本发明的实施例提供的TFT的制作方法，包括如下步骤：In order to achieve the above object, a method for fabricating a TFT according to an embodiment of the present invention includes the following steps:
在衬底基板上形成栅极的图形；Forming a pattern of gate electrodes on the base substrate;
在所述衬底基板上形成栅极绝缘层；Forming a gate insulating layer on the base substrate;
形成源极和漏极的图形，所述源极和所述漏极位于所述栅极绝缘层上方；Forming a pattern of a source and a drain, the source and the drain being above the gate insulating layer;
所述制作方法还包括：The manufacturing method further includes:
在所述栅极、所述源极或/和所述漏极的表面各形成一层防氧化的金属保护层。An anti-oxidation metal protective layer is formed on each surface of the gate, the source or/and the drain.
在一个示例中，所述金属保护层为单质金属保护层，所述栅极、所述源极或/和所述漏极为单质金属电极，且形成所述单质金属电极的单质金属的化学活性高于对应的所述金属保护层的单质金属的化学活性。In one example, the metal protective layer is a single metal protective layer, the gate, the source or/and the drain are elemental metal electrodes, and the elemental metal forming the elemental metal electrode has high chemical activity. The chemical activity of the elemental metal corresponding to the metal protective layer.
在一个示例中，所述金属保护层的形成过程例如为：将形成有所述单质金属电极的所述衬底基板浸入含有与所述金属保护层的单质金属对应的金属离子的溶液中，所述单质金属电极的表面的单质金属与溶液中的金属离子之间发生置换反应，在所述单质金属电极的表面形成所述金属保护层。In one example, the metal protective layer is formed by, for example, immersing the substrate substrate on which the elemental metal electrode is formed in a solution containing metal ions corresponding to the elemental metal of the metal protective layer. A substitution reaction occurs between the elemental metal on the surface of the elemental metal electrode and the metal ion in the solution, and the metal protective layer is formed on the surface of the elemental metal electrode.
在一个示例中，所述栅极、所述源极和所述漏极的表面各形成一层所述金属保护层，所述金属保护层为单质金属保护层，所述栅极、所述源极和所述漏极均为单质金属电极，且形成所述栅极、所述源极和所述漏极的单质金属的化学活性高于形成所述金属保护层的单质金属的化学活性。In one example, the surfaces of the gate, the source, and the drain each form a layer of the metal protection layer, the metal protection layer is a single metal protection layer, the gate, the source The pole and the drain are both elemental metal electrodes, and the chemical activity of the elemental metal forming the gate, the source and the drain is higher than the chemical activity of the elemental metal forming the metal protective layer.
其中，在所述栅极的表面形成一层防氧化的所述金属保护层的步骤包括：Wherein, the step of forming an anti-oxidation metal protective layer on the surface of the gate includes:
将形成有所述栅极的所述衬底基板浸入含有与所述金属保护层的单质金属对应的金属离子的溶液中，所述栅极的表面的单质金属与溶液中的金属离子之间发生置换反应，在所述栅极的表面形成所述金属保护层。The substrate substrate on which the gate electrode is formed is immersed in a solution containing metal ions corresponding to the elemental metal of the metal protective layer, and an elemental metal on the surface of the gate occurs with metal ions in the solution A displacement reaction forms the metal protective layer on the surface of the gate.
在所述源极和所述漏极的表面各形成所述金属保护层的步骤包括：The step of forming the metal protective layer on each of the surface of the source and the drain includes:
将形成有所述源极和所述漏极的所述衬底基板浸入含有与所述金属保护层的单质金属对应的金属离子的溶液中，通过所述源极和所述漏极的表面的单质金属与溶液中的金属离子之间的置换反应，在所述源极和所述漏极的表面各形成所述金属保护层。The substrate substrate on which the source and the drain are formed is immersed in a solution containing metal ions corresponding to an elemental metal of the metal protective layer, passing through the surfaces of the source and the drain A displacement reaction between the elemental metal and the metal ion in the solution forms the metal protective layer on each of the surface of the source and the drain.
在一个示例中，所述栅极、所述源极和所述漏极均为铜电极，所述金属 保护层为银保护层。In one example, the gate, the source, and the drain are both copper electrodes, the metal The protective layer is a silver protective layer.
在一个示例中，在所述衬底基板上可以形成公共电极。当所述衬底基板上形成有公共电极时，在所述衬底基板上形成所述栅极的图形的步骤具体包括：In one example, a common electrode may be formed on the base substrate. When the common electrode is formed on the substrate, the step of forming the pattern of the gate on the substrate includes:
在所述衬底基板上逐层依次沉积透明导电层和材料为第1单质金属的栅极金属层；Depositing a transparent conductive layer and a gate metal layer having a material of a first elemental metal layer by layer on the substrate;
通过构图工艺，在所述栅极金属层形成所述栅极的图形，在所述透明导电层形成所述公共电极的图形；Forming a pattern of the gate electrode in the gate metal layer by a patterning process, forming a pattern of the common electrode in the transparent conductive layer;
将形成有所述公共电极和所述栅极的所述衬底基板放入退火炉中，对所述公共电极进行退火；The substrate substrate on which the common electrode and the gate electrode are formed is placed in an annealing furnace, and the common electrode is annealed;
将完成对所述公共电极退火后的所述衬底基板浸入溶液中，该溶液中含有化学活性比所述第1单质金属的化学活性低的第2单质金属对应的金属离子，将材料为第1单质金属的所述栅极置换为材料为溶液中的金属离子对应的第2单质金属的所述栅极。The base substrate after annealing the common electrode is immersed in a solution containing a metal ion corresponding to a second elemental metal having a lower chemical activity than the first elemental metal, and the material is The gate of the elemental metal is replaced by the gate of the second elemental metal corresponding to the metal ion in the solution.
在一个示例中，在所述衬底基板上沉积栅极绝缘层之后、且在形成所述源极和所述漏极之前还包括如下步骤：In one example, after depositing a gate insulating layer on the base substrate, and before forming the source and the drain, the method further includes the following steps:
在所述栅极绝缘层上形成有源层的图形，所述源极和所述漏极位于所述有源层上。A pattern of an active layer is formed on the gate insulating layer, the source and the drain being on the active layer.
本发明的另一个实施例提供一种TFT，用于改善TFT中的电极的导电性。Another embodiment of the present invention provides a TFT for improving the conductivity of an electrode in a TFT.
为了实现上述目的，根据本发明的实施例提供的TFT，采用上述TFT的制作方法制得。所述TFT包括：设置在衬底基板上的栅极，覆盖所述栅极和所述衬底基板的栅极绝缘层，以及位于所述栅极绝缘层上方的源极和漏极，所述源极和所述漏极同层设置。其中，在所述栅极、所述源极或/和所述漏极的表面各覆盖有一层防氧化的金属保护层。In order to achieve the above object, a TFT according to an embodiment of the present invention is produced by the above-described TFT fabrication method. The TFT includes: a gate disposed on the substrate, a gate insulating layer covering the gate and the substrate, and a source and a drain above the gate insulating layer, The source and the drain are disposed in the same layer. Wherein, the surface of the gate, the source or/and the drain is covered with an anti-oxidation metal protective layer.
在一个示例中，所述金属保护层为单质金属保护层，所述栅极、所述源极或/和所述漏极为单质金属电极，且形成所述单质金属电极的单质金属的化学活性高于对应的所述金属保护层的单质金属的化学活性。In one example, the metal protective layer is a single metal protective layer, the gate, the source or/and the drain are elemental metal electrodes, and the elemental metal forming the elemental metal electrode has high chemical activity. The chemical activity of the elemental metal corresponding to the metal protective layer.
在一个示例中，所述栅极、所述源极和所述漏极的表面各覆盖有一层所述金属保护层，且所述栅极、所述源极和所述漏极均为铜电极，所述金属保 护层为银保护层。In one example, the surfaces of the gate, the source, and the drain are each covered with a layer of the metal protection layer, and the gate, the source, and the drain are both copper electrodes. , the metal warranty The protective layer is a silver protective layer.
在一个示例中，所述衬底基板上设有公共电极，所述公共电极与所述栅极同层设置且相互绝缘。In one example, a common electrode is disposed on the base substrate, and the common electrode is disposed in the same layer as the gate and insulated from each other.
本发明的另一个实施例还提供一种阵列基板，用于改善TFT中的电极的导电性。Another embodiment of the present invention also provides an array substrate for improving the conductivity of electrodes in a TFT.
为了实现上述目的，根据本发明的实施例提供的阵列基板，其设置有呈阵列状排列的上述TFT。In order to achieve the above object, an array substrate according to an embodiment of the present invention is provided with the above-described TFTs arranged in an array.
本发明的另一个实施例还提供一种显示装置，用于改善TFT中的电极的导电性。Another embodiment of the present invention also provides a display device for improving the conductivity of an electrode in a TFT.
为了实现上述目的，根据本发明的实施例提供的显示装置，其设置有上述阵列基板。In order to achieve the above object, a display device according to an embodiment of the present invention is provided with the above array substrate.
本发明实施例具有以下有益效果：Embodiments of the present invention have the following beneficial effects:
上述技术方案中，由于在栅极、源极或/和漏极的表面形成有一层金属保护层，因此，在制作TFT的后续过程中，避免了栅极、源极或/和漏极的表面暴露在外，因而避免了栅极、源极或/和漏极的表面的氧化，从而有效地改善了TFT中的电极的导电性。In the above technical solution, since a metal protective layer is formed on the surface of the gate, the source or/and the drain, the surface of the gate, the source or/and the drain is avoided in the subsequent process of fabricating the TFT. Exposed, thereby avoiding oxidation of the surfaces of the gate, source or/and drain, thereby effectively improving the conductivity of the electrodes in the TFT.
附图说明DRAWINGS
此处所说明的附图用来提供对本发明的进一步理解，本发明的实施例及其说明用于解释本发明，并不构成对本发明的限定。The drawings described herein are intended to provide a further understanding of the invention.
图1为本发明实施例提供的TFT的制作方法的流程图；1 is a flowchart of a method for fabricating a TFT according to an embodiment of the present invention;
图2为本发明实施例提供的栅极的制作方法的流程图；2 is a flowchart of a method for fabricating a gate according to an embodiment of the present invention;
图3为本发明的一个实施例提供的TFT的剖视结构示意图；3 is a cross-sectional structural view of a TFT according to an embodiment of the present invention;
图4为本发明的另一个实施例提供的TFT的剖视结构示意图。4 is a cross-sectional structural view of a TFT according to another embodiment of the present invention.
附图标记：Reference mark:
1-衬底基板，    2-栅极，1-substrate substrate, 2-gate,
3-源极，        4-漏极，3-source, 4-drain,
5-金属保护层，  6-栅极绝缘层，5-metal protective layer, 6-gate insulating layer,
7-公共电极。 7-Common electrode.
具体实施方式detailed description
下面，为了进一步说明本发明实施例提供的TFT的制作方法、TFT、及使用该TFT的阵列基板和显示装置，结合说明书附图进行详细描述。以下实施例不用来限制本发明的范围。In the following, in order to further explain the method for fabricating the TFT, the TFT, and the array substrate and the display device using the TFT according to the embodiments of the present invention, a detailed description will be made in conjunction with the drawings. The following examples are not intended to limit the scope of the invention.
本发明的实施例提供一种TFT的制作方法，该制作方法包括如下步骤：Embodiments of the present invention provide a method of fabricating a TFT, the method comprising the following steps:
在衬底基板上形成栅极的图形；Forming a pattern of gate electrodes on the base substrate;
在衬底基板上形成栅极绝缘层；Forming a gate insulating layer on the base substrate;
形成源极和漏极的图形，源极和漏极位于栅极绝缘层上方。A pattern of source and drain is formed with the source and drain above the gate insulating layer.
所述TFT的制作方法还包括如下步骤：The manufacturing method of the TFT further includes the following steps:
在栅极、源极或/和漏极的表面形成一层防氧化的金属保护层。An anti-oxidation metal protective layer is formed on the surface of the gate, source or/and drain.
在一个示例中，在衬底基板上形成栅极的图形的具体步骤例如包括：首先，在衬底基板上沉积栅极金属层；然后，在栅极金属层上涂布光刻胶，并利用掩膜板对光刻胶进行曝光和显影处理来形成栅极的位置和图形；然后，通过刻蚀等工艺去除不需要的栅极金属层和光刻胶，最终在衬底基板上形成栅极的图形。In one example, the specific steps of forming a pattern of the gate on the base substrate include, for example, first depositing a gate metal layer on the substrate substrate; then, applying a photoresist on the gate metal layer, and utilizing The mask exposes and develops the photoresist to form the position and pattern of the gate; then, the unnecessary gate metal layer and the photoresist are removed by etching or the like, and finally the gate is formed on the substrate. Graphics.
在本发明实施例中，将涂布光刻胶、利用掩膜板对光刻胶进行曝光和显影、以及刻蚀去除不需要的栅极金属层和光刻胶的步骤称为一次构图工艺。在本说明书中，如果没有明确说明，则一次构图工艺包括涂布光刻胶、曝光、显影及刻蚀步骤。In the embodiment of the present invention, the step of coating the photoresist, exposing and developing the photoresist using the mask, and etching to remove the unnecessary gate metal layer and the photoresist is referred to as a patterning process. In the present specification, if not explicitly stated, the one patterning process includes a photoresist coating, exposure, development, and etching steps.
在一个示例中，在栅极绝缘层上方形成源极和漏极的图形的具体步骤例如包括：首先，在栅极绝缘层上方沉积源漏金属层；然后，通过一次构图工艺，形成源极和漏极的图形。In one example, the specific steps of forming a pattern of source and drain over the gate insulating layer include, for example, first depositing a source/drain metal layer over the gate insulating layer; then, forming a source and a pass through a patterning process The pattern of the drain.
根据本发明实施例提供的TFT的制作方法，由于在栅极、源极或/和漏极的表面形成有一层金属保护层，因此，在制作TFT的后续过程中，避免了栅极、源极或/和漏极的表面暴露在外，因而避免了栅极、源极或/和漏极的表面的氧化，从而有效地改善了TFT中的电极的导电性。According to the manufacturing method of the TFT provided by the embodiment of the present invention, since a metal protective layer is formed on the surface of the gate, the source, or/and the drain, the gate and the source are avoided in the subsequent process of fabricating the TFT. The surface of the or/and drain is exposed, thereby avoiding oxidation of the surface of the gate, source or/and drain, thereby effectively improving the conductivity of the electrodes in the TFT.
另外，当覆盖在栅极上的栅极绝缘层为氧化物栅极绝缘层时，由于在栅极的表面形成有一层金属保护层，因而可以避免栅极与氧化物栅极绝缘层直 接接触。因此，在后续的对TFT进行退火处理时，可以避免由氧化物栅极绝缘层中的氧引起栅极的表面的氧化，从而进一步改善TFT中的电极的导电性。In addition, when the gate insulating layer covering the gate is an oxide gate insulating layer, since a metal protective layer is formed on the surface of the gate, the gate and the oxide gate insulating layer can be prevented from being straight. Contact. Therefore, in the subsequent annealing treatment of the TFT, oxidation of the surface of the gate caused by oxygen in the oxide gate insulating layer can be avoided, thereby further improving the conductivity of the electrode in the TFT.
在本发明的实施例中，一般来说，TFT的源极和漏极上还可以形成一层用于保护源极和漏极的钝化层。所述钝化层通常采用氧化硅(SiOx)、氮氧化硅(SiON)或氮化硅(SiNx)中的一种或多种形成。当覆盖在源极和漏极上的钝化层为氧化物钝化层时，由于在源极或/和漏极的表面形成有一层金属保护层，因而可以避免源极或/和漏极与氧化物钝化层直接接触。因此，在后续的对TFT进行退火处理时，可以避免由氧化物钝化层中的氧引起源极或/和漏极的表面的氧化，从而进一步改善TFT中的电极的导电性。In an embodiment of the invention, in general, a passivation layer for protecting the source and the drain may be formed on the source and the drain of the TFT. The passivation layer is typically silicon oxide (SiO x), one kind of silicon oxynitride (SiON) or silicon nitride (SiN x) or more is formed. When the passivation layer covering the source and the drain is an oxide passivation layer, since a metal protective layer is formed on the surface of the source or/and the drain, the source or/and the drain can be avoided. The oxide passivation layer is in direct contact. Therefore, in the subsequent annealing treatment of the TFT, oxidation of the surface of the source or/and the drain caused by oxygen in the oxide passivation layer can be avoided, thereby further improving the conductivity of the electrode in the TFT.
在一个示例中，在源极和漏极上形成钝化层后，TFT中的漏极需要与阵列基板上的像素电极连接。作为一般采取的措施，例如可以在钝化层上开设过孔，使像素电极通过过孔与漏极连接。在钝化层上开设过孔后，漏极的表面上一部分区域会暴露出来。这种情况下，由于在漏极的表面形成一层防氧化的金属保护层，避免了漏极的表面上一部分区域在过孔开设完成后暴露在外，从而可以避免漏极的表面发生氧化，进一步改善TFT中的电极的导电性。In one example, after the passivation layer is formed on the source and drain, the drain in the TFT needs to be connected to the pixel electrode on the array substrate. As a general measure, for example, a via hole may be formed in the passivation layer to connect the pixel electrode to the drain through the via hole. After a via is formed in the passivation layer, a portion of the surface of the drain is exposed. In this case, since an anti-oxidation metal protective layer is formed on the surface of the drain, a part of the surface of the drain is prevented from being exposed after the via opening is completed, thereby preventing oxidation of the surface of the drain, and further Improve the conductivity of the electrodes in the TFT.
在一个示例中，栅极绝缘层可使用例如等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)技术制作。作为栅极绝缘层的材料，例如可以选用氮化硅(SiNx)、氮氧化硅(SiON)、氧化硅(SiOx)中的一种或两种以上。所述栅极绝缘层可以形成结构为单层结构或多层结构的栅极绝缘层。所述栅极绝缘层的厚度例如可以控制在300nm～500nm。In one example, the gate insulating layer can be fabricated using, for example, Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. As a material of the gate insulating layer, for example, one or more of silicon nitride (SiN x ), silicon oxynitride (SiON), and silicon oxide (SiO x ) may be used. The gate insulating layer may form a gate insulating layer having a single layer structure or a multilayer structure. The thickness of the gate insulating layer can be controlled, for example, at 300 nm to 500 nm.
在本发明的实施例中，栅极、源极或/和漏极例如可以选用单质金属或合金作为电极材料，金属保护层也可以选用单质金属或合金作为金属保护层的材料。In the embodiment of the present invention, the gate, the source or/and the drain may be, for example, an elemental metal or an alloy as an electrode material, and the metal protective layer may also be a material of a metal protective layer.
在一个示例中，金属保护层为单质金属保护层，栅极、源极或/和漏极为单质金属电极，且形成单质金属电极的单质金属的化学活性高于对应的金属保护层的单质金属的化学活性。In one example, the metal protective layer is an elemental metal protective layer, the gate, the source or/and the drain are elemental metal electrodes, and the elemental metal forming the elemental metal electrode is more chemically active than the elemental metal of the corresponding metal protective layer. Chemically active.
例如，栅极、源极或/和漏极为单质金属电极，且形成栅极的单质金属的化学活性高于在栅极的表面形成的金属保护层的单质金属的化学活性，形成源极的单质金属的化学活性高于在源极的表面形成的金属保护层的单质金属 的化学活性，形成漏极的单质金属的化学活性高于在漏极的表面形成的金属保护层的单质金属的化学活性。For example, the gate, the source or/and the drain are elemental metal electrodes, and the chemical activity of the elemental metal forming the gate is higher than the chemical activity of the elemental metal of the metal protective layer formed on the surface of the gate, forming a source element The chemical activity of the metal is higher than that of the metal protective layer formed on the surface of the source The chemical activity of the elemental metal forming the drain is higher than the chemical activity of the elemental metal of the metal protective layer formed on the surface of the drain.
在本发明的实施例中，在栅极、源极或/和漏极的表面形成金属保护层的方法可以有多种。例如，可以采用溅射或蒸镀工艺，直接在栅极、源极和漏极的表面各形成一层金属保护层。In the embodiment of the present invention, there may be various methods of forming a metal protective layer on the surfaces of the gate, the source, or/and the drain. For example, a metal protective layer may be formed directly on the surfaces of the gate, the source and the drain by sputtering or evaporation.
在一个示例中，在栅极、源极或/和漏极的表面形成金属保护层的形成方法为：将形成有单质金属电极的衬底基板浸入含有与金属保护层的单质金属对应的金属离子的溶液中，单质金属电极的表面的单质金属与溶液中的金属离子之间发生置换反应，在单质金属电极的表面形成金属保护层。In one example, the metal protective layer is formed on the surface of the gate, the source, or/and the drain by forming a substrate substrate formed with the elemental metal electrode into a metal ion corresponding to the elemental metal of the metal protective layer. In the solution, a substitution reaction occurs between the elemental metal on the surface of the elemental metal electrode and the metal ion in the solution, and a metal protective layer is formed on the surface of the elemental metal electrode.
例如，需要在栅极的表面形成金属保护层时，使栅极为单质金属电极，且形成栅极的单质金属的化学活性高于在栅极的表面形成的金属保护层的单质金属的化学活性。将形成有栅极的衬底基板浸入含有与金属保护层的单质金属对应的金属离子的溶液中，栅极的表面的单质金属与溶液中的金属离子之间发生置换反应，在栅极的表面形成金属保护层。For example, when a metal protective layer needs to be formed on the surface of the gate electrode, the gate electrode is an elemental metal electrode, and the chemical activity of the elemental metal forming the gate electrode is higher than the chemical activity of the elemental metal of the metal protective layer formed on the surface of the gate electrode. The base substrate on which the gate electrode is formed is immersed in a solution containing metal ions corresponding to the elemental metal of the metal protective layer, and a substitution reaction occurs between the elemental metal on the surface of the gate electrode and the metal ion in the solution, on the surface of the gate electrode A metal protective layer is formed.
在一个示例中，在源极或/和漏极的表面形成金属保护层的过程与在栅极的表面形成金属保护层的过程相似。In one example, the process of forming a metal protective layer on the surface of the source or/and drain is similar to the process of forming a metal protective layer on the surface of the gate.
在上述示例中，栅极、源极或/和漏极的表面的单质金属与溶液中的金属离子之间发生置换反应，位于栅极、源极或/和漏极的表面上的单质金属失去电子，溶液中的金属离子得到电子，溶液中的金属离子得到电子后替换栅极、源极或/和漏极的表面上失去电子的单质金属粒子，最终在栅极、源极或/和漏极的表面各形成一层金属保护层。相比于采用溅射或蒸镀工艺形成的金属保护层，利用栅极、源极或/和漏极的表面的单质金属与溶液中的金属离子之间的置换反应获得的金属保护层分别与栅极、源极或/和漏极的表面之间具有较强的结合力，且通过置换反应获得的金属保护层更加均匀、致密，因而该金属保护层具有较好的防氧化效果，可以有效地防止栅极、源极或/和漏极的氧化，从而改善TFT中的电极的导电性。In the above example, the substitution reaction occurs between the elemental metal on the surface of the gate, the source or/and the drain and the metal ion in the solution, and the elemental metal on the surface of the gate, the source or/and the drain is lost. Electrons, metal ions in solution get electrons, metal ions in solution get electrons and replace elemental metal particles that lose electrons on the surface of the gate, source or / and drain, and finally at the gate, source or / and drain The surface of the poles each form a protective layer of metal. The metal protective layer obtained by the displacement reaction between the elemental metal of the surface of the gate, the source or/and the drain and the metal ion in the solution is respectively compared with the metal protective layer formed by the sputtering or evaporation process, respectively The surface of the gate, the source or/and the drain has a strong bonding force, and the metal protective layer obtained by the displacement reaction is more uniform and dense, so that the metal protective layer has a good anti-oxidation effect and can be effective The oxidation of the gate, source or/and drain is prevented to improve the conductivity of the electrodes in the TFT.
在本发明的实施例中，在栅极、源极或/和漏极的表面形成一层防氧化的金属保护层，可以是在栅极、源极、漏极中的一种电极、两种电极或三种电极的表面各形成金属保护层。 In an embodiment of the invention, an anti-oxidation metal protective layer is formed on the surface of the gate, the source or/and the drain, which may be one of a gate, a source, and a drain, and two types. The surfaces of the electrodes or the three electrodes each form a metal protective layer.
在一个示例中，可以在栅极、源极和漏极的表面各形成一层金属保护层。下面，参阅图1，对在栅极、源极和漏极的表面各形成一层金属保护层时的TFT的制作方法进行详细说明。该TFT的制作方法包括如下步骤：In one example, a metal protective layer can be formed on each of the surfaces of the gate, source, and drain. Hereinafter, a method of fabricating a TFT when a metal protective layer is formed on each of the surfaces of the gate, the source, and the drain will be described in detail with reference to FIG. The manufacturing method of the TFT includes the following steps:
步骤S1：在衬底基板上形成栅极的图形；Step S1: forming a pattern of a gate on the base substrate;
步骤S2：在栅极的表面形成一层防氧化的金属保护层；Step S2: forming an anti-oxidation metal protective layer on the surface of the gate;
步骤S3：在衬底基板上形成栅极绝缘层；Step S3: forming a gate insulating layer on the base substrate;
步骤S4：形成源极和漏极的图形，源极和漏极位于栅极绝缘层上方；Step S4: forming a pattern of source and drain, the source and the drain are located above the gate insulating layer;
步骤S5：在源极和漏极的表面各形成一层防氧化的金属保护层。Step S5: forming an anti-oxidation metal protective layer on each of the surfaces of the source and the drain.
其中，在栅极、源极和漏极的表面各形成一层金属保护层，且栅极、源极和漏极均为单质金属电极，金属保护层为单质金属保护层，且形成栅极、源极和漏极的单质金属的化学活性高于形成金属保护层的单质金属的化学活性。Wherein, a metal protective layer is formed on the surfaces of the gate, the source and the drain, and the gate, the source and the drain are elemental metal electrodes, the metal protective layer is a single metal protective layer, and a gate electrode is formed. The chemical activity of the elemental metal of the source and the drain is higher than the chemical activity of the elemental metal forming the metal protective layer.
此外，在栅极的表面形成一层金属保护层的步骤例如包括：In addition, the step of forming a metal protective layer on the surface of the gate includes, for example:
将形成有栅极的衬底基板浸入含有与金属保护层的单质金属对应的金属离子的溶液中，通过栅极的表面的单质金属与溶液中的金属保护层的单质金属所对应的金属离子之间的置换反应，位于栅极的表面上的单质金属失去电子，溶液中的金属离子得到电子，溶液中的金属离子得到电子后替换栅极的表面上失去电子的单质金属，最终在栅极的表面形成金属保护层。The base substrate on which the gate electrode is formed is immersed in a solution containing metal ions corresponding to the elemental metal of the metal protective layer, and the metal ions corresponding to the elemental metal of the metal protective layer in the solution pass through the elemental metal on the surface of the gate electrode During the displacement reaction, the elemental metal on the surface of the gate loses electrons, the metal ions in the solution get electrons, and the metal ions in the solution get electrons to replace the elemental metal that loses electrons on the surface of the gate, and finally at the gate. The surface forms a metal protective layer.
此外，在源极和漏极的表面各形成金属保护层的步骤例如包括：Further, the step of forming a metal protective layer on each of the surfaces of the source and the drain includes, for example:
将形成有源极和漏极的衬底基板浸入含有与金属保护层的单质金属对应的金属离子的溶液中，通过源极和漏极的表面的单质金属与溶液中的金属保护层的单质金属所对应的金属离子之间的置换反应，分别位于源极和漏极的表面上的单质金属失去电子，溶液中的金属离子得到电子，溶液中金属离子得到电子后替换源极和漏极的表面上失去电子的单质金属，最终在源极和漏极的表面各形成金属保护层。The base substrate forming the source and the drain is immersed in a solution containing metal ions corresponding to the elemental metal of the metal protective layer, the elemental metal passing through the surface of the source and the drain, and the elemental metal of the metal protective layer in the solution In the replacement reaction between the corresponding metal ions, the elemental metal on the surface of the source and the drain respectively loses electrons, the metal ions in the solution get electrons, and the metal ions in the solution obtain electrons and replace the surface of the source and the drain. The elemental metal that loses electrons eventually forms a metal protective layer on the surface of the source and the drain.
在本发明的实施例中，通常，TFT的栅极、源极和漏极的材料可以采用电阻率较低且价格低廉的铝、铜等单质金属作为电极材料。In the embodiment of the present invention, generally, the material of the gate, the source, and the drain of the TFT may be made of an elemental metal such as aluminum or copper having a low resistivity and low cost as an electrode material.
在一个示例中，栅极、源极和漏极均采用铜作为电极材料。相比于铝，铜具有较低的电阻率，因而当TFT的结构和尺寸相同时，采用铜作为TFT中 的栅极、源极和漏极的材料，可以降低栅极、源极和漏极的电阻，从而可以改善TFT中的栅极、源极和漏极的导电性，即可以改善TFT中的电极的导电性。In one example, the gate, source, and drain each use copper as the electrode material. Compared with aluminum, copper has a lower resistivity, so when the structure and size of the TFT are the same, copper is used as the TFT. The material of the gate, source and drain can reduce the resistance of the gate, source and drain, thereby improving the conductivity of the gate, source and drain in the TFT, ie, improving the electrode in the TFT Conductivity.
此外，当TFT中的栅极、源极和漏极的长度确定时，在栅极、源极和漏极的电阻值相同的前提下，由于铜具有较低的电阻率，因此，通过采用铜作为栅极、源极和漏极的材料，可以减小TFT中的栅极、源极和漏极的截面面积，并且由于TFT的栅极、源极和漏极的厚度确定，因而可以使TFT中的栅极、源极和漏极的宽度减小，使得TFT应用在阵列基板上时，TFT在阵列基板上所占用的面积减小，从而便于TFT应用在高分辨率的LCD或OLED中。In addition, when the lengths of the gate, the source, and the drain in the TFT are determined, since the resistance values of the gate, the source, and the drain are the same, since copper has a low resistivity, copper is used. As a material of the gate, the source, and the drain, the cross-sectional areas of the gate, the source, and the drain in the TFT can be reduced, and since the thicknesses of the gate, the source, and the drain of the TFT are determined, the TFT can be made The widths of the gate, source and drain are reduced, so that when the TFT is applied to the array substrate, the area occupied by the TFT on the array substrate is reduced, thereby facilitating the application of the TFT in a high resolution LCD or OLED.
在本发明的实施例中，作为金属保护层的材料可以为多种。In the embodiment of the invention, the material as the metal protective layer may be various.
在一个示例中，金属保护层的材料为银。银的化学性质不活泼，因而采用银作为金属保护层的材料，可以有效地防止金属保护层的快速氧化，从而防止造成包覆在金属保护层中的栅极、源极和漏极的氧化。另外，银具有比铜更低的电阻率，因而采用银作为金属保护层的材料，还可以有效改善TFT中的电极的导电性。如果金属保护层的材料为银，则作为含银离子溶液可以选用硝酸银(AgNO3)或硫酸银(Ag2SO4)的溶液。In one example, the material of the metal protective layer is silver. The chemical nature of silver is inactive, so the use of silver as a material for the metal protective layer can effectively prevent rapid oxidation of the metal protective layer, thereby preventing oxidation of the gate, source and drain coated in the metal protective layer. In addition, silver has a lower resistivity than copper, and thus silver is used as a material of the metal protective layer, and the conductivity of the electrode in the TFT can be effectively improved. If the material of the metal protective layer is silver, a solution of silver nitrate (AgNO 3 ) or silver sulfate (Ag 2 SO 4 ) may be used as the silver ion-containing solution.
在一个示例中，在衬底基板上还可以形成公共电极。下面，参阅图2，对在衬底基板上形成有公共电极时，在衬底基板上形成栅极的图形的步骤进行详细说明。该步骤具体包括：In one example, a common electrode may also be formed on the base substrate. Next, a step of forming a pattern of a gate electrode on a base substrate when a common electrode is formed on a base substrate will be described in detail with reference to FIG. This step specifically includes:
步骤S11：在衬底基板上逐层依次沉积透明导电层和材料为第1单质金属的栅极金属层；Step S11: sequentially depositing a transparent conductive layer and a gate metal layer of the first elemental metal on the substrate substrate layer by layer;
步骤S12：通过构图工艺，在栅极金属层形成栅极的图形，在透明导电层形成公共电极的图形；Step S12: forming a pattern of a gate electrode in the gate metal layer by a patterning process, and forming a pattern of the common electrode in the transparent conductive layer;
步骤S13：将形成有公共电极和栅极的衬底基板放入退火炉中，对公共电极进行退火；Step S13: placing the base substrate on which the common electrode and the gate are formed into an annealing furnace, and annealing the common electrode;
步骤S14：将完成对公共电极退火后的衬底基板浸入溶液中，该溶液中含有化学活性比第1单质金属的化学活性低的第2单质金属对应的金属离子，将材料为第1单质金属的栅极置换为材料为溶液中的金属离子对应的第2单质金属的栅极。 Step S14: immersing the base substrate after annealing the common electrode into a solution containing a metal ion corresponding to a second elemental metal having a lower chemical activity than the first elemental metal, and the material is the first elemental metal The gate is replaced by a gate of a second elemental metal corresponding to a metal ion in the solution.
例如，可以预先在衬底基板上形成铝质的栅极，最后将铝质的栅极置换为铜质的栅极。其具体步骤例如包括：For example, an aluminum gate electrode may be formed on the base substrate in advance, and finally the aluminum gate electrode may be replaced with a copper gate electrode. The specific steps include, for example:
在衬底基板上逐层依次沉积透明导电层和材料为铝的栅极金属层；Depositing a transparent conductive layer and a gate metal layer made of aluminum in a layer by layer on the base substrate;
采用半色调光罩技术，在栅极金属层形成栅极的图形，在透明导电层形成公共电极的图形；Using a halftone mask technique, a pattern of gate electrodes is formed on the gate metal layer, and a pattern of the common electrode is formed on the transparent conductive layer;
将形成有公共电极和铝质的栅极的衬底基板放入退火炉中，对公共电极进行退火；其中，退火温度例如可以为230℃～250℃，退火时间例如可以为20min～60min；The substrate having the common electrode and the aluminum gate is placed in an annealing furnace, and the common electrode is annealed; wherein the annealing temperature may be, for example, 230 ° C to 250 ° C, and the annealing time may be, for example, 20 min to 60 min;
将完成对公共电极退火后的衬底基板浸入含铜离子的溶液中，铝质的栅极的铝与溶液中的铜离子发生置换反应，铝失去电子而铜离子得到电子，且铜离子得到电子后替换铝，从而将铝质的栅极置换为铜质的栅极。其中，作为含铜离子的溶液可以是含有硫酸铜(CuSO4)、硝酸铜(Cu(NO3)2)或氯化铜(CuCl2)等可溶性铜盐的溶液。The substrate substrate after annealing the common electrode is immersed in a solution containing copper ions, and the aluminum of the aluminum gate is displaced with the copper ions in the solution, the aluminum loses electrons and the copper ions get electrons, and the copper ions get electrons. The aluminum is then replaced to replace the aluminum gate with a copper gate. Among them, the solution containing copper ions may be a solution containing a soluble copper salt such as copper sulfate (CuSO 4 ), copper nitrate (Cu(NO 3 ) 2 ) or copper chloride (CuCl 2 ).
在上述示例中，预先在衬底基板上形成材料为第1单质金属的栅极的图形，然后通过置换反应形成材料为所需要的第2单质金属的栅极，与直接在衬底基板上形成材料为所需要的第2单质金属的栅极相比，可以避免在对公共电极进行退火的过程中引起材料为所需要的第2单质金属的栅极的氧化，从而进一步改善TFT中的电极的导电性。In the above example, a pattern in which the material is the gate of the first elemental metal is formed on the base substrate in advance, and then the gate electrode of the second elemental metal is formed by the substitution reaction, and is formed directly on the substrate. Compared with the gate of the second elemental metal required, the material can avoid the oxidation of the gate of the second elemental metal required in the process of annealing the common electrode, thereby further improving the electrode in the TFT. Electrical conductivity.
进而，在上述示例中，透明导电层可以采用ITO或IZO中的一种作为透明导电层的材料。透明导电层的厚度例如可以为30nm～70nm。栅极金属层的厚度例如可以为200nm～400nm。Further, in the above examples, the transparent conductive layer may be one of ITO or IZO as a material of the transparent conductive layer. The thickness of the transparent conductive layer may be, for example, 30 nm to 70 nm. The thickness of the gate metal layer may be, for example, 200 nm to 400 nm.
在本发明的实施例中，在衬底基板上形成公共电极和材料为第1单质金属的栅极的图形的方法主要可以有以下两种。In the embodiment of the present invention, the method of forming the pattern of the common electrode and the gate of the first elemental metal on the base substrate may be mainly as follows.
一种方法为：首先，在衬底基板上沉积透明导电层，通过构图工艺形成公共电极的图形；然后，在形成有公共电极的衬底基板上沉积材料为第1单质金属的栅极金属层，通过构图工艺形成材料为第1单质金属的栅极的图形。One method is: first, depositing a transparent conductive layer on a base substrate, forming a pattern of a common electrode by a patterning process; and then depositing a gate metal layer of the first elemental metal on the base substrate on which the common electrode is formed A pattern in which the material is a gate of the first elemental metal is formed by a patterning process.
另一种方法为：首先，在衬底基板上沉积透明导电层；然后，在透明导电层上沉积材料为第1单质金属的栅极金属层；再然后，采用半色调光罩技术，在栅极金属层形成栅极的图形，在透明导电层形成公共电极的图形。其 中，栅极包括栅极金属层和位于栅极金属层下方的透明导电层。Another method is: first, depositing a transparent conductive layer on the base substrate; then depositing a gate metal layer of the first elemental metal on the transparent conductive layer; and then, using a halftone mask technique, The polar metal layer forms a pattern of gate electrodes, and a pattern of common electrodes is formed in the transparent conductive layer. Its The gate includes a gate metal layer and a transparent conductive layer under the gate metal layer.
在一个示例中，采用后一种方法在衬底基板上形成公共电极和材料为第1单质金属的栅极的图形。对于后一种方法，由于只采用一次构图工艺，减少了构图工艺中掩膜板的使用数量，从而降低了成本。另外，相比于前一种方法，后一种方法节省了形成栅极和公共电极的图形的时间。In one example, the latter method is used to form a pattern of a common electrode and a gate material of the first elemental metal on the base substrate. In the latter method, since only one patterning process is employed, the number of mask sheets used in the patterning process is reduced, thereby reducing the cost. In addition, the latter method saves time in forming the pattern of the gate and the common electrode compared to the former method.
一般来说，TFT具有一层有源层。在本发明的实施例中，有源层可以形成在栅极绝缘层上，且源极和漏极位于有源层上；有源层还可以形成在源极和漏极上，源极和漏极位于栅极绝缘层上。Generally, a TFT has an active layer. In an embodiment of the invention, an active layer may be formed on the gate insulating layer, and the source and the drain are on the active layer; the active layer may also be formed on the source and the drain, the source and the drain The pole is located on the gate insulating layer.
在一个示例中，有源层形成在栅极绝缘层上，且源极和漏极位于有源层上。参阅图1，该有源层的形成步骤如下述步骤S3’所述。是In one example, the active layer is formed on the gate insulating layer, and the source and drain are on the active layer. Referring to Fig. 1, the formation step of the active layer is as described in the following step S3'. Yes
在上述TFT的制作方法中，在衬底基板上沉积栅极绝缘层之后、且在形成源极和漏极之前还包括：In the above method for fabricating a TFT, after depositing a gate insulating layer on a substrate, and before forming the source and drain, further comprising:
步骤S3’：在栅极绝缘层上形成有源层的图形，源极和漏极位于有源层上。Step S3': a pattern of an active layer is formed on the gate insulating layer, and a source and a drain are on the active layer.
例如，首先，在栅极绝缘层上沉积半导体层；然后，通过一次构图工艺，在栅极绝缘层上形成有源层的图形。其中，有源层的材料例如可以选用氧化铟镓锌(IGZO)、氧化铟(In2O3)或氧化锌(ZnO)中的一种。有源层的厚度例如可以为30nm～100nm。For example, first, a semiconductor layer is deposited on the gate insulating layer; then, a pattern of the active layer is formed on the gate insulating layer by one patterning process. Among them, the material of the active layer may be, for example, one of indium gallium zinc oxide (IGZO), indium oxide (In 2 O 3 ), or zinc oxide (ZnO). The thickness of the active layer may be, for example, 30 nm to 100 nm.
在一个示例中，有源层、源极和漏极的图形可以通过一次构图工艺形成，从而可以降低成本，节省时间。该工艺的具体步骤包括：In one example, the patterns of the active layer, the source, and the drain can be formed by one patterning process, thereby reducing cost and saving time. The specific steps of the process include:
首先，在栅极绝缘层上沉积半导体层；First, a semiconductor layer is deposited on the gate insulating layer;
然后，在半导体层上沉积源漏金属层；Then, depositing a source/drain metal layer on the semiconductor layer;
然后，采用半色调光罩技术或灰阶光罩技术，在源漏金属层形成源极和漏极的图形，在半导体层形成有源层的图形。Then, using a halftone mask technique or a gray scale mask technique, a pattern of source and drain electrodes is formed in the source/drain metal layer, and a pattern of the active layer is formed in the semiconductor layer.
本发明的实施例还提供一种TFT，所述TFT采用上述TFT的制作方法制得。下面，参阅图3或图4，对本发明实施例的TFT进行具体描述。本发明实施例提供的所述TFT包括：设置在衬底基板1上的栅极2，覆盖栅极2和衬底基板1的栅极绝缘层6，以及位于栅极绝缘层6上方的源极3和漏极4，源极3和漏极4同层设置。其中，在栅极2、源极3或/和漏极4的表面各覆盖有一层防氧化的金属保护层5。 Embodiments of the present invention also provide a TFT which is fabricated by the above-described TFT fabrication method. Hereinafter, a TFT of an embodiment of the present invention will be specifically described with reference to FIG. 3 or FIG. The TFT provided by the embodiment of the present invention includes: a gate electrode 2 disposed on the substrate substrate 1, a gate insulating layer 6 covering the gate electrode 2 and the substrate substrate 1, and a source electrode located above the gate insulating layer 6. 3 and drain 4, source 3 and drain 4 are arranged in the same layer. Wherein, the surface of the gate 2, the source 3 or/and the drain 4 is covered with an anti-oxidation metal protective layer 5 .
在本发明的实施例中，栅极2、源极3或/和漏极4可以选用单质金属或合金作为电极材料，金属保护层5也可以选用单质金属或合金作为金属保护层5的材料。In the embodiment of the present invention, the gate 2, the source 3 or/and the drain 4 may be made of an elemental metal or alloy as an electrode material, and the metal protective layer 5 may also be made of a simple metal or alloy as the material of the metal protective layer 5.
在一个示例中，金属保护层5为单质金属保护层，栅极2、源极3或/和漏极4为单质金属电极，且形成单质金属电极的单质金属的化学活性高于对应的金属保护层5的单质金属的化学活性。In one example, the metal protective layer 5 is an elemental metal protective layer, and the gate 2, the source 3 or/and the drain 4 are elemental metal electrodes, and the elemental metal forming the elemental metal electrode has higher chemical activity than the corresponding metal protection. The chemical activity of the elemental metal of layer 5.
在本发明的实施例中，在栅极2、源极3或/和漏极4的表面各覆盖有一层金属保护层5，可以是在栅极2、源极3、漏极4中的一种电极、两种电极或三种电极的表面各覆盖一层金属保护层5。In the embodiment of the present invention, the surface of the gate 2, the source 3 or/and the drain 4 is covered with a metal protection layer 5, which may be one of the gate 2, the source 3 and the drain 4. The surfaces of the electrodes, the two electrodes or the three electrodes are each covered with a metal protective layer 5.
在一个示例中，在栅极2、源极3和漏极4的表面各覆盖一层金属保护层5，且栅极2、源极3和漏极4均为铜电极，金属保护层5为银保护层。In one example, the surface of the gate 2, the source 3 and the drain 4 are each covered with a metal protective layer 5, and the gate 2, the source 3 and the drain 4 are both copper electrodes, and the metal protective layer 5 is Silver protective layer.
在本发明的另一个实施例提供的TFT中，参阅图4，衬底基板1上还可以设有公共电极7，公共电极7与栅极2同层设置且相互绝缘。In the TFT provided by another embodiment of the present invention, referring to FIG. 4, the base substrate 1 may further be provided with a common electrode 7, which is disposed in the same layer as the gate 2 and insulated from each other.
本说明书中上述各个实施例或示例均采用递进的方式描述，各个实施例或示例之间相同或相似的部分互相参见即可。每个实施例或示例重点说明的都是与其他实施例或示例的不同之处。尤其，对于产品实施例而言，由于其基本相似于方法实施例，所以描述得比较简单，相关之处参见方法实施例的部分说明即可。The various embodiments or examples described above are described in a progressive manner, and the same or similar parts between the various embodiments or examples may be referred to each other. Each embodiment or example focuses on differences from other embodiments or examples. In particular, for the product embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the description of the method embodiment.
本发明的实施例还提供一种阵列基板，所述阵列基板包括多个如上所述的TFT，且多个TFT呈阵列状排列。An embodiment of the present invention further provides an array substrate including a plurality of TFTs as described above, and the plurality of TFTs are arranged in an array.
所述阵列基板与上述实施例提供的TFT相对于现有技术所具有的优势相同，在此不再赘述。The TFTs provided in the above embodiments are the same as those in the prior art, and are not described herein again.
本发明的实施例还提供一种显示装置，所述显示装置包括如上所述的阵列基板。Embodiments of the present invention also provide a display device including the array substrate as described above.
所述显示装置与上述实施例提供的阵列基板相对于现有技术所具有的优势相同，在此不再赘述。The advantages of the display device and the array substrate provided by the above embodiments are the same as those of the prior art, and are not described herein again.
所述显示装置例如可以为：液晶显示装置、电子纸、手机、平板电脑、电视机、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。The display device may be, for example, a liquid crystal display device, an electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator, or the like, or any product or component having a display function.
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何 的一个或多个实施例或示例中以合适的方式结合。In the description of the above embodiments, specific features, structures, materials or features may be in any One or more embodiments or examples are combined in a suitable manner.
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。 The above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention. It should be covered by the scope of the present invention. Therefore, the scope of the invention should be determined by the scope of the appended claims.

Claims (13)

  1. 一种薄膜晶体管的制作方法，包括如下步骤：A method for fabricating a thin film transistor includes the following steps:
    在衬底基板上形成栅极的图形；Forming a pattern of gate electrodes on the base substrate;
    在所述衬底基板上形成栅极绝缘层；Forming a gate insulating layer on the base substrate;
    形成源极和漏极的图形，所述源极和所述漏极位于所述栅极绝缘层上方；Forming a pattern of a source and a drain, the source and the drain being above the gate insulating layer;
    所述制作方法还包括：The manufacturing method further includes:
    在所述栅极、所述源极或/和所述漏极的表面各形成一层防氧化的金属保护层。An anti-oxidation metal protective layer is formed on each surface of the gate, the source or/and the drain.
  2. 根据权利要求1所述的薄膜晶体管的制作方法，其中，所述金属保护层为单质金属保护层，所述栅极、所述源极或/和所述漏极为单质金属电极，且形成所述单质金属电极的单质金属的化学活性高于对应的所述金属保护层的单质金属的化学活性。The method of fabricating a thin film transistor according to claim 1 , wherein the metal protective layer is a single metal protective layer, and the gate, the source or/and the drain are elemental metal electrodes, and the The elemental metal of the elemental metal electrode has a higher chemical activity than the elemental metal of the corresponding metal protective layer.
  3. 根据权利要求2所述的薄膜晶体管的制作方法，其中，所述金属保护层的形成过程为：将形成有所述单质金属电极的所述衬底基板浸入含有与所述金属保护层的单质金属对应的金属离子的溶液中，所述单质金属电极的表面的单质金属与溶液中的金属离子之间发生置换反应，在所述单质金属电极的表面形成所述金属保护层。The method of fabricating a thin film transistor according to claim 2, wherein the metal protective layer is formed by immersing the base substrate on which the elemental metal electrode is formed in an elemental metal containing the metal protective layer In the solution of the corresponding metal ion, a substitution reaction occurs between the elemental metal on the surface of the elemental metal electrode and the metal ion in the solution, and the metal protective layer is formed on the surface of the elemental metal electrode.
  4. 根据权利要求1-3中任一项所述的薄膜晶体管的制作方法，其中，所述栅极、所述源极和所述漏极的表面各形成一层所述金属保护层，所述金属保护层为单质金属保护层，所述栅极、所述源极和所述漏极均为单质金属电极，且形成所述栅极、所述源极和所述漏极的单质金属的化学活性高于形成所述金属保护层的单质金属的化学活性；The method of fabricating a thin film transistor according to any one of claims 1 to 3, wherein a surface of the gate, the source and the drain each form a metal protective layer, the metal The protective layer is a single metal protective layer, and the gate, the source and the drain are elemental metal electrodes, and chemical activities of the elemental metal forming the gate, the source and the drain are formed. Higher than the chemical activity of the elemental metal forming the metal protective layer;
    在所述栅极的表面形成一层防氧化的所述金属保护层的步骤包括：The step of forming an anti-oxidation metal protective layer on the surface of the gate includes:
    将形成有所述栅极的所述衬底基板浸入含有与所述金属保护层的单质金属对应的金属离子的溶液中，所述栅极的表面的单质金属与溶液中的金属离子之间发生置换反应，在所述栅极的表面形成所述金属保护层；The substrate substrate on which the gate electrode is formed is immersed in a solution containing metal ions corresponding to the elemental metal of the metal protective layer, and an elemental metal on the surface of the gate occurs with metal ions in the solution Displacement reaction, forming the metal protective layer on a surface of the gate;
    在所述源极和所述漏极的表面各形成所述金属保护层的步骤包括：The step of forming the metal protective layer on each of the surface of the source and the drain includes:
    将形成有所述源极和所述漏极的所述衬底基板浸入含有与所述金属保护 层的单质金属对应的金属离子的溶液中，所述源极和所述漏极的表面的单质金属与溶液中的金属离子之间的置换反应，在所述源极和所述漏极的表面各形成所述金属保护层。Immersing the base substrate on which the source and the drain are formed and containing the metal protection a displacement reaction between the elemental metal of the source and the surface of the drain and the metal ion in the solution in the solution of the metal ion corresponding to the elemental metal of the layer, on the surface of the source and the drain Each of the metal protective layers is formed.
  5. 根据权利要求4所述的薄膜晶体管的制作方法，其中，所述栅极、所述源极和所述漏极均为铜电极；所述金属保护层为银保护层。The method of fabricating a thin film transistor according to claim 4, wherein the gate, the source and the drain are both copper electrodes; and the metal protective layer is a silver protective layer.
  6. 根据权利要求1～5中任一项所述的薄膜晶体管的制作方法，其中，当所述衬底基板上形成有公共电极时，在所述衬底基板上形成所述栅极的图形的步骤包括：The method of manufacturing a thin film transistor according to any one of claims 1 to 5, wherein, when a common electrode is formed on the base substrate, the step of forming a pattern of the gate on the base substrate include:
    在所述衬底基板上逐层依次沉积透明导电层和材料为第1单质金属的栅极金属层；Depositing a transparent conductive layer and a gate metal layer having a material of a first elemental metal layer by layer on the substrate;
    通过构图工艺，在所述栅极金属层形成所述栅极的图形，在所述透明导电层形成所述公共电极的图形；Forming a pattern of the gate electrode in the gate metal layer by a patterning process, forming a pattern of the common electrode in the transparent conductive layer;
    将形成有所述公共电极和所述栅极的所述衬底基板放入退火炉中，对所述公共电极进行退火；The substrate substrate on which the common electrode and the gate electrode are formed is placed in an annealing furnace, and the common electrode is annealed;
    将完成对所述公共电极退火后的所述衬底基板浸入溶液中，溶液中含有化学活性比第1单质金属的化学活性低的第2单质金属对应的金属离子，将材料为第1单质金属的所述栅极置换为材料为溶液中的金属离子对应的第2单质金属的所述栅极。The substrate substrate after annealing the common electrode is immersed in a solution containing a metal ion corresponding to a second elemental metal having a lower chemical activity than the first elemental metal, and the material is the first elemental metal. The gate is replaced by the gate of the second elemental metal corresponding to the metal ion in the solution.
  7. 根据权利要求1所述的薄膜晶体管的制作方法，其中，在所述衬底基板上沉积栅极绝缘层之后、且在形成所述源极和所述漏极之前还包括如下步骤：The method of fabricating a thin film transistor according to claim 1, wherein after the gate insulating layer is deposited on the base substrate, and before forming the source and the drain, the method further comprises the steps of:
    在所述栅极绝缘层上形成有源层的图形，所述源极和所述漏极位于所述有源层上。A pattern of an active layer is formed on the gate insulating layer, the source and the drain being on the active layer.
  8. 一种薄膜晶体管，所述薄膜晶体管采用如权利要求1-7中任一项所述的薄膜晶体管的制作方法制得，所述薄膜晶体管包括：设置在衬底基板上的栅极，覆盖所述栅极和所述衬底基板的栅极绝缘层，以及位于所述栅极绝缘层上方的源极和漏极，所述源极和所述漏极同层设置；A thin film transistor fabricated by the method of fabricating a thin film transistor according to any one of claims 1 to 7, comprising: a gate electrode disposed on a substrate, covering the a gate and a gate insulating layer of the base substrate, and a source and a drain above the gate insulating layer, the source and the drain being disposed in the same layer;
    其中，在所述栅极、所述源极或/和所述漏极的表面各覆盖有一层防氧化的金属保护层。 Wherein, the surface of the gate, the source or/and the drain is covered with an anti-oxidation metal protective layer.
  9. 根据权利要求8所述的薄膜晶体管，其中，所述金属保护层为单质金属保护层，所述栅极、所述源极或/和所述漏极为单质金属电极，且形成所述单质金属电极的单质金属的化学活性高于对应的所述金属保护层的单质金属的化学活性。The thin film transistor according to claim 8, wherein the metal protective layer is an elemental metal protective layer, and the gate, the source or/and the drain are elemental metal electrodes, and the elemental metal electrode is formed The chemical activity of the elemental metal is higher than the chemical activity of the elemental metal of the corresponding metal protective layer.
  10. 根据权利要求9所述的薄膜晶体管，其中，所述栅极、所述源极和所述漏极的表面各覆盖有一层所述金属保护层，且所述栅极、所述源极和所述漏极均为铜电极；所述金属保护层为银保护层。The thin film transistor according to claim 9, wherein surfaces of said gate, said source and said drain are each covered with a layer of said metal protective layer, and said gate, said source and said The drains are all copper electrodes; the metal protective layer is a silver protective layer.
  11. 根据权利要求8所述的薄膜晶体管，其中，所述衬底基板上设有公共电极，所述公共电极与所述栅极同层设置且相互绝缘。The thin film transistor according to claim 8, wherein a common electrode is provided on the base substrate, and the common electrode is disposed in the same layer as the gate and insulated from each other.
  12. 一种阵列基板，所述阵列基板设置有呈阵列状排列的多个如权利要求8-11中任一项所述的薄膜晶体管。An array substrate provided with a plurality of thin film transistors according to any one of claims 8-11 arranged in an array.
  13. 一种显示装置，所述显示装置设置有如权利要求12所述的阵列基板。 A display device provided with the array substrate according to claim 12.
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