JP2002353634A - Multi-layer wiring board - Google Patents

Multi-layer wiring board

Info

Publication number
JP2002353634A
JP2002353634A JP2001161689A JP2001161689A JP2002353634A JP 2002353634 A JP2002353634 A JP 2002353634A JP 2001161689 A JP2001161689 A JP 2001161689A JP 2001161689 A JP2001161689 A JP 2001161689A JP 2002353634 A JP2002353634 A JP 2002353634A
Authority
JP
Japan
Prior art keywords
layer
liquid crystal
coating layer
wiring board
crystal polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001161689A
Other languages
Japanese (ja)
Other versions
JP4508472B2 (en
Inventor
Katsura Hayashi
桂 林
Takahiro Matsunaga
隆弘 松永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2001161689A priority Critical patent/JP4508472B2/en
Priority to US10/091,114 priority patent/US6663946B2/en
Publication of JP2002353634A publication Critical patent/JP2002353634A/en
Application granted granted Critical
Publication of JP4508472B2 publication Critical patent/JP4508472B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PROBLEM TO BE SOLVED: To simultaneously achieve high density wiring, heat resistance against soldering, and high frequency characteristics. SOLUTION: The multi-layer wiring board 4 comprises a plurality of laminated insulating layers 1 consisting of organic matter. Each insulating layer is provided with a wiring conductor 2 consisting of metal foil on one of the upper and lower surfaces thereof. Wiring conductors 2 disposed on the top and the bottom of the insulating layer 1 are electrically connected by a through conductor 3 formed through the insulating layer 1. The insulating layer 1 comprises a liquid crystal polymer layer 5 on whose upper and lower surfaces there are formed coating layers 6 consisting of organic matter of polyphenylene ether family and organic matter having an elastic modulus smaller than that of above- mentioned matter. The liquid crystal polymer layer 5 is characterized in that it has a thermal expansion coefficient of -20 to 20 ppm/ deg.C and a tensile elastic modulus of >=2 GPa in the layer direction and the coating layer 6 has a tensile elastic modulus of 0.2 to 1.5 GPa in the layer direction.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、各種AV機器や家
電機器・通信機器・コンピュータおよびその周辺機器等
の電子機器に使用される多層配線基板に関するものであ
り、特に絶縁層の一部に液晶ポリマー層を用いた多層配
線基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board for use in electronic devices such as various AV devices, home appliances, communication devices, computers, and peripheral devices thereof. The present invention relates to a multilayer wiring board using a polymer layer.

【0002】[0002]

【従来の技術】従来、半導体素子等の能動部品や容量素
子・抵抗素子等の受動部品を多数搭載して所定の電子回
路を構成した混成集積回路を形成するための多層配線基
板は、通常、ガラスクロスにエポキシ樹脂を含浸させて
成る絶縁層にドリルによって上下に貫通孔を形成し、こ
の貫通孔内部および絶縁層表面に複数の配線導体を形成
した配線基板を、多数積層することによって形成されて
いる。
2. Description of the Related Art Conventionally, a multilayer wiring board for forming a hybrid integrated circuit in which a predetermined electronic circuit is formed by mounting a large number of active parts such as semiconductor elements and passive parts such as capacitance elements and resistance elements is usually used. It is formed by laminating a large number of wiring boards in which through holes are formed vertically by drilling in an insulating layer formed by impregnating glass cloth with epoxy resin, and a plurality of wiring conductors are formed inside the through holes and on the surface of the insulating layer. ing.

【0003】一般に、現在の電子機器は、移動体通信機
器に代表されるように小型・薄型・軽量・高性能・高機
能・高品質・高信頼性が要求されており、このような電
子機器に搭載される混成集積回路等の電子部品も小型・
高密度化が要求されるようになってきており、このよう
な高密度化の要求に応えるために、電子部品を構成する
多層配線基板も、配線導体の微細化や絶縁層の薄層化・
貫通孔の微細化が必要となってきている。このため、近
年、貫通孔を微細化するために、ドリル加工より微細加
工が可能なレーザ加工が用いられるようになってきた。
In general, current electronic devices are required to be small, thin, lightweight, high-performance, high-function, high-quality, and high-reliability, as typified by mobile communication devices. Electronic components such as hybrid integrated circuits mounted on
In order to respond to such demands for higher densities, multilayer wiring boards that make up electronic components are also required to have finer wiring conductors and thinner insulating layers.
It is becoming necessary to miniaturize the through holes. For this reason, in recent years, laser processing that can perform finer processing than drill processing has been used in order to make through holes finer.

【0004】しかしながら、ガラスクロスにエポキシ樹
脂を含浸させて成る絶縁層は、ガラスクロスをレーザに
より穿設加工することが困難なために貫通孔の微細化に
は限界があり、また、ガラスクロスの厚みが不均一のた
めに均一な孔径の貫通孔を形成することが困難であると
いう問題点を有していた。
However, an insulating layer formed by impregnating a glass cloth with an epoxy resin has a limitation in miniaturizing a through-hole because it is difficult to pierce the glass cloth with a laser. There is a problem that it is difficult to form a through-hole having a uniform diameter due to the uneven thickness.

【0005】このような問題点を解決するために、アラ
ミド樹脂繊維で製作した不織布にエポキシ樹脂を含浸さ
せた絶縁基材や、ポリイミドフィルムにエポキシ系接着
剤を塗布した絶縁基材を絶縁層に用いた多層配線基板が
提案されている。
In order to solve such problems, an insulating base material made by impregnating a non-woven fabric made of aramid resin fiber with an epoxy resin or an insulating base material obtained by applying an epoxy-based adhesive to a polyimide film is used as an insulating layer. A multilayer wiring board used has been proposed.

【0006】しかしながら、アラミド不織布やポリイミ
ドフィルムを用いた絶縁基材は吸湿性が高く、吸湿した
状態で半田リフローを行なうと半田リフローの熱により
吸湿した水分が気化してガスが発生し、絶縁層間で剥離
してしまう等の問題点を有していた。
However, an insulating substrate using an aramid nonwoven fabric or a polyimide film has high hygroscopicity. If solder reflow is performed in a state of absorbing moisture, the moisture absorbed by the heat of the solder reflow vaporizes to generate gas, and an insulating interlayer is generated. With the problem of peeling.

【0007】このような問題点を解決するために、多層
配線基板の絶縁層の材料として液晶ポリマーを用いるこ
とが検討されている。液晶ポリマーから成る層は、剛直
な分子で構成されているとともに分子同士がある程度規
則的に並んだ構成をしており分子間力が強いことから、
高耐熱性・高弾性率・高寸法安定性・低吸湿性を示し、
ガラスクロスのような強化材を用いる必要がなく、ま
た、微細加工性にも優れるという特徴を有している。さ
らに、高周波領域においても、低誘電率・低誘電正接で
あり高周波特性に優れるという特徴を有している。
In order to solve such problems, use of a liquid crystal polymer as a material for an insulating layer of a multilayer wiring board has been studied. The layer composed of the liquid crystal polymer is composed of rigid molecules and has a structure in which molecules are regularly arranged to some extent, and has a strong intermolecular force.
Shows high heat resistance, high elastic modulus, high dimensional stability, low moisture absorption,
There is no need to use a reinforcing material such as glass cloth, and it has features of being excellent in fine workability. Further, even in a high-frequency region, it has a characteristic that it has a low dielectric constant and a low dielectric loss tangent and has excellent high-frequency characteristics.

【0008】このような液晶ポリマーの特徴を活かし、
特開平8-97565号公報には、第1の液晶ポリマーを含む
回路層間に第1の液晶ポリマーの融点よりも低い融点を
有する第2の液晶ポリマーを含む接着剤層を挿入して成
る多層プリント回路基板が提案されており、また、特開
2000-269616号公報には熱可塑性液晶ポリマーフィルム
と金属箔とをエポキシ系接着剤を用いて接着した高周波
回路基板が提案されている。
[0008] Utilizing the characteristics of such a liquid crystal polymer,
Japanese Patent Application Laid-Open No. 8-97565 discloses a multi-layer printing method in which an adhesive layer containing a second liquid crystal polymer having a melting point lower than that of the first liquid crystal polymer is inserted between circuit layers containing the first liquid crystal polymer. A circuit board has been proposed.
JP-A-2000-269616 proposes a high-frequency circuit board in which a thermoplastic liquid crystal polymer film and a metal foil are bonded using an epoxy-based adhesive.

【0009】しかしながら、特開平8-97565号公報に提
案された多層プリント回路基板は、回路層を間に液晶ポ
リマーを含む接着剤層を挿入して熱圧着により接着する
際、液晶ポリマー分子が剛直で動き難いために回路層表
面の微細な凹部に入ることができず、その結果、十分な
アンカー効果を発揮することができず、回路層と接着剤
層との密着性が悪く高温バイアス試験で絶縁不良が発生
してしまうという問題点を有していた。
[0009] However, in the multilayer printed circuit board proposed in Japanese Patent Application Laid-Open No. 8-97565, the liquid crystal polymer molecules are rigid when the circuit layers are bonded by thermocompression bonding by inserting an adhesive layer containing a liquid crystal polymer therebetween. It is difficult to move, and it is not possible to enter the fine recesses on the surface of the circuit layer, as a result, it is not possible to exert a sufficient anchor effect, the adhesion between the circuit layer and the adhesive layer is poor, There is a problem that insulation failure occurs.

【0010】また、特開2000-269616号公報に提案され
た高周波回路基板は、エポキシ系接着剤の誘電率が液晶
ポリマーの誘電率と大きく異なることから、積層時の加
圧によって生じるわずかな厚みばらつきにより、高周波
領域、特に100MHz以上の周波数領域においては伝送
特性が低下してしまうという問題点を有していた。
The high-frequency circuit board proposed in Japanese Patent Application Laid-Open No. 2000-269616 has a small thickness caused by pressure during lamination since the dielectric constant of an epoxy-based adhesive is significantly different from that of a liquid crystal polymer. Due to the variation, there is a problem that transmission characteristics are degraded in a high frequency region, particularly in a frequency region of 100 MHz or higher.

【0011】このような問題点を解決するために、本願
出願人は、特願2001−53834において、液晶ポリマー層
の上下面にポリフェニレンエーテル系有機物から成る被
覆層を形成して成る絶縁層を複数積層した多層配線基板
を提案した。
In order to solve such a problem, the applicant of the present invention disclosed in Japanese Patent Application No. 2001-53834 a plurality of insulating layers formed by forming a coating layer made of a polyphenylene ether organic material on the upper and lower surfaces of a liquid crystal polymer layer. A laminated multilayer wiring board was proposed.

【0012】[0012]

【発明が解決しようとする課題】 しかしながら液晶ポ
リマー層の上下面にポリフェニレンエーテル系有機物か
ら成る被覆層を形成して成る絶縁層を複数積層して成る
多層配線基板は、被覆層の熱膨張係数と液晶ポリマー層
の熱膨張係数とが異なるために、急激な温度変化をとも
なう温度サイクル試験においては被覆層にクラックが生
じ易いという傾向があった。また、被覆層に無機絶縁粉
末を高密度に充填し被覆層の熱膨張係数を液晶ポリマー
層の熱膨脹係数と略一致させて温度サイクル試験におけ
るクラックを防止するという方法もあるが、この場合、
被覆層と配線導体との密着性が悪くなり配線導体を被着
形成することができなくなるとともに、絶縁層同士を接
着する際、絶縁層を形成する被覆層同士の密着性が悪く
なって絶縁層間で剥離して絶縁性が低下してしまい易い
という傾向があった。
However, a multilayer wiring board comprising a plurality of insulating layers formed by forming a coating layer made of a polyphenylene ether-based organic material on the upper and lower surfaces of a liquid crystal polymer layer has a thermal expansion coefficient of the coating layer. Since the thermal expansion coefficient of the liquid crystal polymer layer is different, cracks tend to occur in the coating layer in a temperature cycle test involving a rapid temperature change. There is also a method of preventing the cracks in the temperature cycle test by filling the coating layer with the inorganic insulating powder at a high density and making the thermal expansion coefficient of the coating layer substantially coincide with the thermal expansion coefficient of the liquid crystal polymer layer.
The adhesion between the coating layer and the wiring conductor is deteriorated, so that the wiring conductor cannot be adhered and formed. In addition, when the insulation layers are bonded to each other, the adhesion between the coating layers forming the insulation layer is deteriorated, and the insulation layer is formed. , And the insulating property is liable to be deteriorated.

【0013】本発明はかかる従来技術の問題点に鑑み案
出されたものであり、その目的は、高密度な配線を有す
るとともに、半田耐熱性・絶縁性・高周波伝送特性・温
度サイクル性に優れた多層配線基板を提供することに有
る。
The present invention has been devised in view of the above-mentioned problems of the prior art, and has as its object the purpose of having high-density wiring, and being excellent in solder heat resistance, insulation, high-frequency transmission characteristics, and temperature cycle characteristics. To provide a multi-layer wiring board.

【0014】[0014]

【課題を解決するための手段】本発明の多層配線基板
は、有機材料から成り、上下面の少なくとも1つの面に
金属箔から成る配線導体が配設された複数の絶縁層を積
層して成るとともに、この絶縁層を挟んで上下に位置す
る配線導体間を絶縁層に形成された貫通導体を介して電
気的に接続した多層配線基板であって、絶縁層は、液晶
ポリマー層の上下面にポリフェニレンエーテル系有機物
およびこれよりも低弾性率の有機物から成る被覆層を形
成して成り、液晶ポリマー層は、層方向における熱膨張
係数が−20〜20ppm/℃であるとともに、引張り弾性
率が2GPa以上であり、被覆層は、層方向の引張り弾
性率が0.2〜1.5GPaであることを特徴とするものであ
る。
A multilayer wiring board according to the present invention is formed by laminating a plurality of insulating layers made of an organic material and having a wiring conductor made of a metal foil on at least one of upper and lower surfaces. A multilayer wiring board in which wiring conductors located above and below the insulating layer are electrically connected via through conductors formed in the insulating layer, and the insulating layer is provided on upper and lower surfaces of the liquid crystal polymer layer. The liquid crystal polymer layer has a thermal expansion coefficient of −20 to 20 ppm / ° C. in a layer direction and a tensile elasticity of 2 GPa, which is formed by forming a coating layer made of a polyphenylene ether-based organic substance and an organic substance having a lower elastic modulus. As described above, the coating layer has a tensile elastic modulus in the layer direction of 0.2 to 1.5 GPa.

【0015】また、本発明の多層配線基板は、被覆層
が、低弾性率の有機物を5〜60体積%含有することを特
徴とするものである。
The multilayer wiring board of the present invention is characterized in that the coating layer contains 5 to 60% by volume of an organic substance having a low elastic modulus.

【0016】さらに、本発明の多層配線基板は、低弾性
率の有機物が20〜80体積%のスチン系有機物を含有する
ことを特徴とするものである。
Further, the multilayer wiring board of the present invention is characterized in that the low elastic modulus organic substance contains 20 to 80% by volume of a stin-based organic substance.

【0017】また、本発明の多層配線基板は、被覆層の
厚みの合計が絶縁層の厚みの10〜70%であることを特徴
とするものである。
Further, the multilayer wiring board of the present invention is characterized in that the total thickness of the covering layer is 10 to 70% of the thickness of the insulating layer.

【0018】本発明の多層配線基板によれば、絶縁層
を、液晶ポリマー層の表面にポリフェニレンエーテル系
有機物およびこれよりも低弾性率の有機物から成る被覆
層を形成して成るものとしたことから、微細な貫通孔を
穿設することが可能となり、その結果、高密度な配線を
有する多層配線基板とすることができ、また、液晶ポリ
マー層と被覆層の誘電率の周波数挙動がほぼ等しいこと
から、積層の際にわずかな厚みばらつきが生じたとして
も高周波領域における伝送特性の低下を生じることのな
い高周波伝送特性に優れたものとすることができる。ま
た、液晶ポリマー層を、その層方向における熱膨張係数
が−20〜20ppm/℃であるとともに、引張り弾性率が
2GPa以上であるものとし、被覆層を、その層方向の
引張り弾性率が0.2〜1.5GPaであるものとしたことか
ら、熱膨張係数が比較的大きいポリフェニレンエーテル
系有機物から成る被覆層が温度変化により熱膨張・熱収
縮する際に、この被覆層の弾性率が0.2〜1.5GPaと低
弾性であるために、被覆層の熱膨張・熱収縮が、熱膨張
係数が小さくて高弾性率の液晶ポリマー層に拘束され、
被覆層の熱膨張・熱収縮を小さなものとすることができ
る。この結果、急激な温度変化をともなう温度サイクル
試験においても被覆層にクラックが生じることが無い。
また、被覆層に無機絶縁粉末を高密度に充填する必要が
ないことから、被覆層同士の密着性を良好とすることが
できるとともに、絶縁層間で剥離して絶縁性が低下して
しまうこともない。
According to the multilayer wiring board of the present invention, the insulating layer is formed by forming a coating layer made of a polyphenylene ether-based organic substance and an organic substance having a lower elastic modulus on the surface of the liquid crystal polymer layer. It is possible to form fine through-holes, and as a result, it is possible to obtain a multilayer wiring board having high-density wiring, and the frequency behavior of the dielectric constant of the liquid crystal polymer layer and that of the coating layer are substantially equal. Therefore, even if a slight thickness variation occurs during the lamination, it is possible to obtain excellent high-frequency transmission characteristics without lowering the transmission characteristics in the high-frequency region. The liquid crystal polymer layer has a coefficient of thermal expansion in the layer direction of −20 to 20 ppm / ° C., a tensile modulus of elasticity of 2 GPa or more, and the coating layer has a tensile modulus of 0.2 to 0.2 GPa in the layer direction. Since the thermal expansion coefficient is set to 1.5 GPa, when the coating layer made of a polyphenylene ether-based organic material having a relatively large coefficient of thermal expansion thermally expands and contracts due to a temperature change, the elastic modulus of the coating layer is 0.2 to 1.5 GPa. Due to the low elasticity, the thermal expansion and thermal contraction of the coating layer are restricted by the liquid crystal polymer layer with a low coefficient of thermal expansion and high elasticity,
Thermal expansion and thermal contraction of the coating layer can be reduced. As a result, cracks do not occur in the coating layer even in a temperature cycle test involving a rapid temperature change.
Further, since it is not necessary to fill the coating layer with the inorganic insulating powder at high density, the adhesion between the coating layers can be improved, and the insulating property may be reduced due to peeling between the insulating layers. Absent.

【0019】また、本発明の多層配線基板によれば、上
記構成において、被覆層がポリフェニレンエーテル系有
機物よりも低弾性率の有機物を5〜60体積%含有するこ
とから、被覆層の弾性率を容易に0.2〜1.5GPaの範囲
にすることができる。
Further, according to the multilayer wiring board of the present invention, in the above configuration, the coating layer contains an organic substance having a lower elastic modulus than the polyphenylene ether-based organic substance in an amount of 5 to 60% by volume. It can easily be in the range of 0.2 to 1.5 GPa.

【0020】さらに、本発明の多層配線基板によれば、
上記構成において、低弾性率の有機物が20〜80体積%の
スチレン系有機物を含有することから、このスチレン系
有機物が低誘電率・低誘電正接であることにより、100
MHz以上の高周波においても伝送特性に優れた多層配
線基板とすることができる。
Further, according to the multilayer wiring board of the present invention,
In the above configuration, since the low elastic modulus organic substance contains 20 to 80% by volume of the styrene organic substance, the styrene organic substance has a low dielectric constant and a low dielectric loss tangent, and thus has a low dielectric constant and a low dielectric loss tangent.
A multilayer wiring board having excellent transmission characteristics even at a high frequency of MHz or higher can be obtained.

【0021】また、本発明の多層配線基板によれば、上
記構成において、被覆層の厚みの合計を絶縁層の厚みの
10〜70%としたことから、配線導体との密着性が良好で
高耐熱性・低吸湿性・高寸法安定性の多層配線基板とす
ることができる。
Further, according to the multilayer wiring board of the present invention, in the above configuration, the total of the thickness of the covering layer is reduced by the thickness of the insulating layer.
Since the content is set to 10 to 70%, a multilayer wiring board having good adhesion to the wiring conductor, high heat resistance, low moisture absorption, and high dimensional stability can be obtained.

【0022】[0022]

【発明の実施の形態】次に本発明の多層配線基板を添付
の図面に基づいて詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a multilayer wiring board according to the present invention will be described in detail with reference to the accompanying drawings.

【0023】図1は、本発明の多層配線基板に半導体素
子を搭載して成る混成集積回路の実施の形態の一例を示
す断面図であり、また、図2は、図1に示す多層配線基
板の要部拡大断面図である。これらの図において1は絶
縁層、2は配線導体、3は貫通導体で、主にこれらで本
発明の多層配線基板4が構成されている。なお、本例で
は、絶縁層1を4層積層して成る多層配線基板4を示し
ている。
FIG. 1 is a sectional view showing an example of an embodiment of a hybrid integrated circuit in which a semiconductor element is mounted on a multilayer wiring board of the present invention. FIG. 2 is a cross-sectional view of the multilayer wiring board shown in FIG. 3 is an enlarged sectional view of a main part of FIG. In these figures, reference numeral 1 denotes an insulating layer, 2 denotes a wiring conductor, and 3 denotes a through conductor, and these mainly constitute a multilayer wiring board 4 of the present invention. In this example, a multi-layer wiring board 4 formed by laminating four insulating layers 1 is shown.

【0024】絶縁層1は、液晶ポリマー層5と、その表
面に被着形成されたポリフェニレンエーテル系有機物お
よびこれよりも低弾性率の有機物から成る被覆層6とか
ら構成されており、多層配線基板4に搭載される電子部
品7や配線導体2の支持体としての機能を有する。
The insulating layer 1 is composed of a liquid crystal polymer layer 5 and a coating layer 6 made of a polyphenylene ether-based organic substance and an organic substance having a lower elastic modulus than the liquid crystal polymer layer 5 on the surface thereof. 4 has a function as a support for the electronic components 7 and the wiring conductors 2 mounted on the electronic component 7.

【0025】なお、ここで液晶ポリマーとは、溶融時に
液晶状態あるいは光学的に複屈折する性質を有するポリ
マーを指し、一般に溶液状態で液晶性を示すリオトロピ
ック液晶ポリマーや溶融時に液晶性を示すサーモトロピ
ック液晶ポリマー、あるいは、熱変形温度で分類される
1型・2型・3型すべての液晶ポリマーを含むものであ
る。また、ポリフェニレンエーテル系有機物とは、ポリ
フェニレンエーテル樹脂やポリフェニレンエーテルに種
々の官能基が結合した樹脂、あるいはこれらの誘導体・
重合体を意味するものである。
Here, the liquid crystal polymer refers to a polymer having a liquid crystal state or an optically birefringent property when melted, and generally a lyotropic liquid crystal polymer which exhibits liquid crystallinity in a solution state or a thermotropic liquid crystalline polymer which exhibits liquid crystallinity when melted. It includes a liquid crystal polymer or a liquid crystal polymer of all types 1, 2, and 3 classified by heat distortion temperature. The polyphenylene ether-based organic material is a polyphenylene ether resin or a resin in which various functional groups are bonded to polyphenylene ether, or a derivative or a derivative thereof.
It means a polymer.

【0026】本発明の多層配線基板4においては、液晶
ポリマー層5を、温度サイクル信頼性・半田耐熱性・加
工性の観点からは、層方向における熱膨張係数が−20〜
20ppm/℃であるとともに、引張り弾性率が2GPa
以上、融点が200〜400℃であるものとすることが好まし
い。液晶ポリマー層5は、熱膨張係数が−20ppm/℃
未満であると、液晶ポリマー層5と被覆層6との熱膨張
係数の差が大きくなって被覆層6にクラックを生じ易く
なる傾向があり、20ppm/℃を超えると、絶縁層1と
配線導体2との熱膨張係数の差が大きくなって、配線導
体2付近で被覆層6にクラックを生じ易くなる傾向があ
る。また、引張り弾性率が2GPa未満であると、絶縁
層1の曲げ強度が小さくなって多層配線基板4に反りを
生じやすくなる傾向がある。従って、液晶ポリマー層5
は、層方向における熱膨張率が−20〜20ppm/℃であ
るとともに、引張り弾性率が2GPa以上であることが
好ましく、特に電子部品7を実装した時の接続信頼性の
観点からは熱膨張率が−10〜10ppm/℃、融点が250
〜350℃であるものが好ましい。
In the multilayer wiring board 4 of the present invention, the liquid crystal polymer layer 5 has a thermal expansion coefficient in the layer direction of −20 to -20 from the viewpoint of temperature cycle reliability, solder heat resistance and workability.
20 ppm / ° C and a tensile modulus of 2 GPa
As described above, the melting point is preferably 200 to 400 ° C. The liquid crystal polymer layer 5 has a thermal expansion coefficient of −20 ppm / ° C.
If it is less than 20 ° C., the difference in the thermal expansion coefficient between the liquid crystal polymer layer 5 and the coating layer 6 tends to increase, and the coating layer 6 tends to crack, and if it exceeds 20 ppm / ° C., the insulating layer 1 and the wiring conductor 2 has a large thermal expansion coefficient, and the coating layer 6 tends to crack in the vicinity of the wiring conductor 2. If the tensile modulus is less than 2 GPa, the bending strength of the insulating layer 1 tends to be small, and the multilayer wiring board 4 tends to be warped. Therefore, the liquid crystal polymer layer 5
It is preferable that the thermal expansion coefficient in the layer direction is −20 to 20 ppm / ° C., and the tensile elastic modulus is preferably 2 GPa or more. In particular, from the viewpoint of connection reliability when the electronic component 7 is mounted, the thermal expansion coefficient -10 to 10 ppm / ° C, melting point 250
Those having a temperature of ~ 350 ° C are preferred.

【0027】なお、液晶ポリマー層5は、層としての物
性を損なわない範囲内で、熱安定性を改善するための酸
化防止剤や耐光性を改善するための紫外線吸収剤等の光
安定剤、難燃性を改善するためのハロゲン系もしくはリ
ン酸系の難燃性剤、アンチモン系化合物やホウ酸亜鉛・
メタホウ酸バリウム・酸化ジルコニウム等の難燃助剤、
潤滑性を改善するための高級脂肪酸や高級脂肪酸エステ
ル・高級脂肪酸金属塩・フルオロカーボン系界面活性剤
等の滑剤、熱膨張係数を調整するため、および/または
機械的強度を向上するための酸化アルミニウムや酸化珪
素・酸化チタン・酸化バリウム・酸化ストロンチウム・
酸化ジルコニウム・酸化カルシウム・ゼオライト・窒化
珪素・窒化アルミニウム・炭化珪素・チタン酸カリウム
・チタン酸バリウム・チタン酸ストロンチウム・チタン
酸カルシウム・ホウ酸アルミニウム・スズ酸バリウム・
ジルコン酸バリウム・ジルコン酸ストロンチウム等の充
填材を含有してもよい。
The liquid crystal polymer layer 5 includes a light stabilizer such as an antioxidant for improving thermal stability and an ultraviolet absorber for improving light resistance, as long as the physical properties of the layer are not impaired. Halogen or phosphoric acid flame retardants to improve flame retardancy, antimony compounds and zinc borate
Flame retardant aids such as barium metaborate and zirconium oxide,
Lubricants such as higher fatty acids, higher fatty acid esters, higher fatty acid metal salts, fluorocarbon surfactants and the like for improving lubricity, aluminum oxide for adjusting thermal expansion coefficient and / or improving mechanical strength, Silicon oxide, titanium oxide, barium oxide, strontium oxide
Zirconium oxide, calcium oxide, zeolite, silicon nitride, aluminum nitride, silicon carbide, potassium titanate, barium titanate, strontium titanate, calcium titanate, aluminum borate, barium stannate.
A filler such as barium zirconate and strontium zirconate may be contained.

【0028】また、上記の充填材等の粒子形状は、略球
状・針状・フレーク状等があり、充填性の観点からは略
球状が好ましい。さらに、粒子径は、通常0.1〜15μm
程度であり、液晶ポリマー層5の厚みよりも小さい。
The particle shape of the above-mentioned filler and the like includes a substantially spherical shape, a needle shape, a flake shape and the like, and a substantially spherical shape is preferable from the viewpoint of the filling property. Further, the particle size is usually 0.1 to 15 μm
And smaller than the thickness of the liquid crystal polymer layer 5.

【0029】さらに、液晶ポリマー層5は、被覆層6と
の密着性を高めるために、その表面をバフ研磨・ブラス
ト研磨・ブラシ研磨・プラズマ処理・コロナ処理・紫外
線処理・薬品処理等の方法を用いて中心線表面粗さRa
が0.05〜5μmの値となるように粗化しておくことが好
ましい。中心線表面粗さRaは、半田リフローの際に液
晶ポリマー層5と被覆層6との剥離を防止するという観
点からは0.05μm以上であることが好ましく、表面に被
覆層6を形成する際に空気のかみ込みを防止するという
観点からは5μm以下であることが好ましい。
Further, the surface of the liquid crystal polymer layer 5 is subjected to a method such as buff polishing, blast polishing, brush polishing, plasma treatment, corona treatment, ultraviolet treatment, chemical treatment, etc. in order to enhance the adhesion to the coating layer 6. Using center line surface roughness Ra
Is preferably roughened to a value of 0.05 to 5 μm. The center line surface roughness Ra is preferably 0.05 μm or more from the viewpoint of preventing separation of the liquid crystal polymer layer 5 and the coating layer 6 during solder reflow. When the coating layer 6 is formed on the surface, From the viewpoint of preventing air entrapment, the thickness is preferably 5 μm or less.

【0030】次に、被覆層6は、絶縁層1に配線導体2
を被着形成する際の接着剤の機能を有するとともに、絶
縁層1同士を積層する際の接着剤の役目を果たす。この
ような被覆層6は、ポリフェニレンエーテル系有機物お
よびこれよりも低弾性率の有機物から成り、層方向の引
っ張り弾性率が0.2〜1.5GPaであることが好ましい。
また、このことが重要である。
Next, the covering layer 6 is formed by forming the wiring conductor 2 on the insulating layer 1.
Has the function of an adhesive when forming and adhering, and also functions as an adhesive when the insulating layers 1 are laminated. Such a coating layer 6 is made of a polyphenylene ether-based organic material and an organic material having a lower elastic modulus than the above, and preferably has a tensile elastic modulus in the layer direction of 0.2 to 1.5 GPa.
This is also important.

【0031】本発明の多層配線基板4によれば、絶縁層
1を、液晶ポリマー層5の表面にポリフェニレンエーテ
ル系有機物およびこれよりも低弾性率の有機物から成る
被覆層6を形成して成るものとしたことから、微細な貫
通孔を穿設することが可能となり、その結果、高密度な
配線を有する多層配線基板4とすることができ、また、
液晶ポリマー層5と被覆層6の誘電率の周波数挙動がほ
ぼ等しいことから、積層の際にわずかな厚みばらつきが
生じたとしても高周波領域における伝送特性の低下を生
じることのない高周波伝送特性に優れたものとすること
ができる。
According to the multilayer wiring board 4 of the present invention, the insulating layer 1 is formed by forming a coating layer 6 made of a polyphenylene ether-based organic substance and an organic substance having a lower elastic modulus on the surface of the liquid crystal polymer layer 5. Therefore, it is possible to form fine through holes, and as a result, it is possible to obtain a multilayer wiring board 4 having high-density wiring,
Since the frequency behavior of the dielectric constant of the liquid crystal polymer layer 5 and that of the coating layer 6 are almost equal, even if a slight thickness variation occurs during lamination, the high frequency transmission characteristics are not deteriorated in the high frequency region. It can be.

【0032】なお、ポリフェニレンエーテル系有機物
は、被覆層6に20〜80体積%含有されており、ポリフェ
ニレンエーテル樹脂やその誘導体、または、これらのポ
リマーアロイ等が用いられる。とりわけ熱サイクル信頼
性や積層時の位置精度の観点からは、アリル変性ポリフ
ェニレンエーテル等の熱硬化性ポリフェニレンエーテル
を含有することが好ましい。また、ポリフェニレンエー
テル系有機物の含有量が20体積%未満であると、混練性
が低下する傾向にあり、80体積%を超えると、液晶ポリ
マー層5表面に被覆層6を形成する際に、被覆層6の厚
みバラツキが大きくなる傾向がある。従って、ポリフェ
ニレンエーテル系有機物の含有量は、20〜80体積%の範
囲が好ましい。
The polyphenylene ether-based organic substance is contained in the coating layer 6 in an amount of 20 to 80% by volume, and a polyphenylene ether resin or a derivative thereof, or a polymer alloy thereof is used. In particular, it is preferable to contain a thermosetting polyphenylene ether such as an allyl-modified polyphenylene ether from the viewpoint of heat cycle reliability and positional accuracy during lamination. If the content of the polyphenylene ether-based organic substance is less than 20% by volume, the kneadability tends to decrease. If the content exceeds 80% by volume, the coating layer 6 is formed on the surface of the liquid crystal polymer layer 5 when the coating layer 6 is formed. The thickness variation of the layer 6 tends to increase. Therefore, the content of the polyphenylene ether-based organic substance is preferably in the range of 20 to 80% by volume.

【0033】また、本発明の多層配線基板4によれば、
被覆層6の層方向の引っ張り弾性率を0.2〜1.5GPaと
したことから、熱膨張係数が比較的大きいポリフェニレ
ンエーテル系有機物を含む被覆層6が温度変化により熱
膨張・熱収縮する際に、この被覆層6の弾性率が0.2〜
1.5GPaと低弾性であるために、被覆層6の熱膨張・
熱収縮が、熱膨張係数が小さくて高弾性率の液晶ポリマ
ー層5に拘束され、被覆層6の熱膨張・熱収縮を小さな
ものとすることができる。この結果、急激な温度変化を
ともなう温度サイクル試験においても被覆層6にクラッ
クが生じることが無い。また、被覆層6に無機絶縁粉末
を高密度に充填する必要がないことから、被覆層6同士
の密着性を良好とすることができるとともに、絶縁層1
間で剥離して絶縁性が低下してしまうこともない。
According to the multilayer wiring board 4 of the present invention,
Since the tensile elastic modulus in the layer direction of the coating layer 6 is set to 0.2 to 1.5 GPa, when the coating layer 6 containing a polyphenylene ether-based organic substance having a relatively large thermal expansion coefficient undergoes thermal expansion and thermal contraction due to temperature change, The elastic modulus of the coating layer 6 is 0.2 to
Due to the low elasticity of 1.5 GPa, thermal expansion of the coating layer 6
The thermal contraction is restrained by the liquid crystal polymer layer 5 having a small coefficient of thermal expansion and a high elastic modulus, so that the thermal expansion and thermal contraction of the coating layer 6 can be reduced. As a result, cracks do not occur in the coating layer 6 even in a temperature cycle test involving a rapid temperature change. In addition, since it is not necessary to fill the coating layer 6 with the inorganic insulating powder at a high density, the adhesion between the coating layers 6 can be improved, and
There is no possibility that insulation is deteriorated due to peeling between them.

【0034】なお、被覆層6の引張り弾性率が0.2GP
a未満であると多層配線基板4の剛性が小さくなり、多
層配線基板4に反りが発生して配線導体層2が断線して
しまう傾向にある。また、1.5GPaを越えると、高温
下で液晶ポリマー層5が被覆層6を拘束することが困難
と成る傾向があり、その結果、液晶ポリマー層5を引き
伸ばして多層配線基板4の熱膨張を大きなものとしてし
まい、電子部品7との接続部で断線を生じてしまう傾向
にある。従って、被覆層6は引張り弾性率を0.2〜1.5G
Pa、好適には0.7〜1.2GPaとすることが好ましい。
The coating layer 6 has a tensile modulus of 0.2 GP.
If it is less than a, the rigidity of the multilayer wiring board 4 will be small, and the multilayer wiring board 4 will be warped and the wiring conductor layer 2 tends to be disconnected. If the pressure exceeds 1.5 GPa, it tends to be difficult for the liquid crystal polymer layer 5 to restrain the coating layer 6 at a high temperature. As a result, the liquid crystal polymer layer 5 is stretched to increase the thermal expansion of the multilayer wiring board 4. And the connection with the electronic component 7 tends to be broken. Therefore, the coating layer 6 has a tensile elasticity of 0.2 to 1.5 G.
Pa, preferably 0.7 to 1.2 GPa.

【0035】また、被覆層6は、ポリフェニレンエーテ
ル系有機物よりも低弾性率の有機物を5〜60体積%含有
しており、そして、このことが重要である。
The coating layer 6 contains 5 to 60% by volume of an organic substance having a lower elastic modulus than that of the polyphenylene ether-based organic substance, and this is important.

【0036】本発明の多層配線基板4によれば、被覆層
6がポリフェニレンエーテル系有機物よりも低弾性率の
有機物を5〜60体積%含有していることから、被覆層6
の弾性率を容易に0.2〜1.5GPaの範囲にすることがで
きる。なお、ポリフェニレンエーテル系有機物よりも低
弾性率の有機物の含有率が5体積%未満であると、被覆
層6の引張り弾性率を低くする効果が現れなくなる傾向
にあり、また、60体積%を超えると被覆層6の引張り弾
性率が低くなりすぎて多層配線基板4が柔らかくなって
反ってしまい、その結果、配線導体層2が断線してしま
う傾向にある。従って、被覆層6のポリフェニレンエー
テル系有機物よりも低弾性率の有機物の含有率を5〜60
体積%、最適には20〜40体積%とすることが好ましい。
According to the multilayer wiring board 4 of the present invention, the coating layer 6 contains 5 to 60% by volume of an organic substance having a lower elastic modulus than that of the polyphenylene ether-based organic substance.
Can easily be in the range of 0.2 to 1.5 GPa. When the content of the organic substance having a lower elastic modulus than that of the polyphenylene ether-based organic substance is less than 5% by volume, the effect of lowering the tensile elasticity of the coating layer 6 tends to be not exhibited, and more than 60% by volume. In addition, the tensile elastic modulus of the coating layer 6 becomes too low, and the multilayer wiring board 4 becomes soft and warps, and as a result, the wiring conductor layer 2 tends to be disconnected. Therefore, the content of the organic substance having a lower elastic modulus than the polyphenylene ether-based organic substance of the coating
It is preferred that the volume percentage is, optimally, 20 to 40 volume%.

【0037】このようなポリフェニレンエーテル系有機
物よりも低弾性率の有機物としては、1GPa以下の弾
性率の樹脂やゴム状弾性体が用いられ、例えば、天然ゴ
ムやポリブタジエン・ポリイソプレン・ポリイソブチレ
ン・ネオプレン・ポリスルフィドゴム・チオコールゴム
・アクリルゴム・ウレタンゴム・シリコーンゴム・エビ
クロロヒドリンゴム・スチレン−ブタジエンブロック共
重合体(SBR)・水素添加スチレン−ブタジエンブロ
ック共重合体(SEB・SEBC)・スチレン−ブタジ
エン−スチレンブロック共重合体(SBS)・水素添加
スチレン−ブタジエン−スチレンブロック共重合体(S
EBS)・スチレン−イソプレンブロック共重合体(S
IR)・水素添加スチレン−イソプレンブロック共重合
体(SEP)・スチレン−イソプレン−スチレンブロッ
ク共重合体(SIS)・水素添加スチレン−イソプレン
−スチレンブロック共重合体(SEPS)・エチレンプ
ロピレンゴム(EPR)・エチレンプロピレンジエンゴ
ム(EPDM)・ブタジエン−アクリロニトリル−スチ
レン−コアシェルゴム(ABS)・メチルメタクリレー
ト−ブタジエン−スチレン−コアシェルゴム(MBS)
・メチルメタクリレート−ブチルアクリレート−スチレ
ン−コアシェルゴム(MAS)・オクチルアクリレート
−ブタジエン−スチレン−コアシェルゴム(MABS)
・アルキルアクリレート−ブタジエン−アクリロニトリ
ル−スチレンコアシェルゴム(AABS)・ブタジエン
−スチレン−コアシェルゴム(SBR)およびメチルメ
タクリレート−ブチルアクリレートシロキサンをはじめ
とするシロキサン含有コアシェルゴム等のコアシェルタ
イプの粒子状弾性体、またはこれらを変性したゴム等が
用いられる。
As the organic substance having an elastic modulus lower than that of the polyphenylene ether-based organic substance, a resin or rubber-like elastic body having an elastic modulus of 1 GPa or less is used. For example, natural rubber, polybutadiene / polyisoprene / polyisobutylene / neoprene are used. -Polysulfide rubber-Thiokol rubber-Acrylic rubber-Urethane rubber-Silicone rubber-Ebichlorohydrin rubber-Styrene-butadiene block copolymer (SBR)-Hydrogenated styrene-butadiene block copolymer (SEB / SEBC)-Styrene-butadiene- Styrene block copolymer (SBS) / hydrogenated styrene-butadiene-styrene block copolymer (S
EBS) · Styrene-isoprene block copolymer (S
IR) hydrogenated styrene-isoprene block copolymer (SEP) styrene-isoprene-styrene block copolymer (SIS) hydrogenated styrene-isoprene-styrene block copolymer (SEPS) ethylene propylene rubber (EPR) -Ethylene propylene diene rubber (EPDM)-Butadiene-acrylonitrile-styrene-core-shell rubber (ABS)-Methyl methacrylate-butadiene-styrene-core-shell rubber (MBS)
・ Methyl methacrylate-butyl acrylate-styrene-core-shell rubber (MAS) ・ Octyl acrylate-butadiene-styrene-core-shell rubber (MABS)
Core-shell type particle-like elastic bodies such as alkyl acrylate-butadiene-acrylonitrile-styrene core-shell rubber (ABS), butadiene-styrene-core-shell rubber (SBR), and siloxane-containing core-shell rubber such as methyl methacrylate-butyl acrylate siloxane; or Modified rubbers and the like are used.

【0038】なお、これらの低弾性率の有機物は無水マ
レイン酸やエポキシ等の極性基を有する変性剤により変
性を行ってもよい。さらに、これらの低弾性率の有機物
は1種のみを単独で用いても良く、あるいは2種以上を
組み合わせて用いても良い。
These organic substances having a low elastic modulus may be modified by a modifier having a polar group such as maleic anhydride or epoxy. Furthermore, these organic substances having a low elastic modulus may be used alone or in combination of two or more.

【0039】また、本発明の多層配線基板4において
は、低弾性率の有機物が20〜80体積%のスチレン系有機
物を含有することが好ましい。本発明の多層配線基板4
によれば、スチレン系有機物が低誘電率・低誘電正接で
あることから、100MHz以上の高周波においても伝送
特性に優れた多層配線基板4とすることができる。
Further, in the multilayer wiring board 4 of the present invention, it is preferable that the low elastic modulus organic substance contains 20 to 80% by volume of a styrene organic substance. Multilayer wiring board 4 of the present invention
According to this, since the styrene-based organic substance has a low dielectric constant and a low dielectric loss tangent, the multilayer wiring board 4 having excellent transmission characteristics even at a high frequency of 100 MHz or more can be obtained.

【0040】このようなスチレン系有機物を含有する低
弾性率の有機物としては、分子構造中にモノマー単位と
してスチレンを有する有機物であり、特に、SBRやS
EB・SEBC・SBS・SEBS・SIR・SEP・
SISおよびSEPS、またはこれらを変性した低弾性
率の有機物が用いられる。
The low elastic modulus organic material containing such a styrene-based organic material is an organic material having styrene as a monomer unit in the molecular structure, and particularly, SBR or SBR.
EB / SEBC / SBS / SEBS / SIR / SEP /
SIS and SEPS, or organic substances having a low elastic modulus modified from these are used.

【0041】なお、スチレン系有機物の含有量が20体積
%未満であると、低弾性率の有機物の誘電率・誘電正接
が大きなものとなって100MHZ以上の高周波領域における
伝送特性が低下してしまう傾向があり、80体積%を超え
ると低弾性率の有機物の弾性率が大きくなるために被覆
層6の引張り弾性率を所望の範囲とすることが困難とな
る傾向がある。従って、スチレン系有機物の含有量は20
〜80体積%が好ましい。
If the content of the styrene-based organic substance is less than 20% by volume, the dielectric constant and the dielectric loss tangent of the organic substance having a low elastic modulus become large, and the transmission characteristics in a high-frequency region of 100 MHz or more deteriorate. When the content exceeds 80% by volume, the modulus of elasticity of the organic material having a low modulus of elasticity increases, so that it tends to be difficult to set the tensile modulus of the coating layer 6 in a desired range. Therefore, the content of styrenic organic matter is 20
~ 80% by volume is preferred.

【0042】また、被覆層6は、液晶ポリマー層5との
接着性や配線導体2・貫通導体3との密着性を良好にす
るという観点からは、重合反応可能な官能基を2個以上
有する多官能性モノマーあるいは多官能性重合体等の添
加剤を含有することが好ましく、例えば、トリアリルシ
アヌレートやトリアリルイソシアヌレートおよびこれら
の重合体等を含有することが好ましい。
The coating layer 6 has two or more functional groups capable of performing a polymerization reaction from the viewpoint of improving the adhesiveness with the liquid crystal polymer layer 5 and the adhesiveness with the wiring conductor 2 and the through conductor 3. It is preferable to contain an additive such as a polyfunctional monomer or a polyfunctional polymer. For example, it is preferable to contain triallyl cyanurate, triallyl isocyanurate, and a polymer thereof.

【0043】さらに、絶縁層1を積層して加圧する際
に、被覆層6の流動性を抑制し、後述する貫通導体3の
位置ずれや被覆層6の厚みばらつきを防止するという観
点からは、被覆層6は充填材として10体積%以上の無機
絶縁粉末を含有することが好ましい。また、液晶ポリマ
ー層5との接着界面および配線導体2との接着界面での
半田リフロー時の剥離を防止するという観点からは、充
填材の含有量を70体積%以下とすることが好ましい。従
って、被覆層6に、10〜70体積%の充填材を含有させて
おくことが好ましい。
Further, when the insulating layer 1 is laminated and pressed, the fluidity of the covering layer 6 is suppressed, and from the viewpoint of preventing the displacement of the through conductor 3 and the thickness variation of the covering layer 6 described below, The coating layer 6 preferably contains 10% by volume or more of inorganic insulating powder as a filler. Further, from the viewpoint of preventing peeling at the time of solder reflow at the bonding interface with the liquid crystal polymer layer 5 and the bonding interface with the wiring conductor 2, the content of the filler is preferably set to 70% by volume or less. Therefore, it is preferable that the coating layer 6 contains 10 to 70% by volume of the filler.

【0044】なお、絶縁層1の厚みは絶縁信頼性を確保
するという観点からは10〜200μmであることが好まし
く、また、被覆層6の厚みの合計は、配線導体2との接
着性を良好にするという観点からは絶縁層1の厚みの10
%以上とすることが好ましい。さらに、高耐熱性・低吸
湿性・高寸法安定性を確保するという観点からは、70%
以下とすることが好ましい。従って、被覆層6の厚みの
合計は、絶縁層1の厚みの10〜70%とすることが好まし
い。
The thickness of the insulating layer 1 is preferably from 10 to 200 μm from the viewpoint of securing insulation reliability, and the total thickness of the coating layer 6 improves the adhesion to the wiring conductor 2. From the viewpoint of making the thickness of the insulating layer 1 10
% Is preferable. Furthermore, from the viewpoint of ensuring high heat resistance, low moisture absorption and high dimensional stability, 70%
It is preferable to set the following. Therefore, the total thickness of the coating layer 6 is preferably set to 10 to 70% of the thickness of the insulating layer 1.

【0045】このような絶縁層1は、例えば粒径が0.1
〜15μm程度の酸化珪素等の無機絶縁粉末に、熱硬化性
ポリフェニレンエーテル樹脂とこれより低弾性率の有機
物・溶剤・可塑剤・分散剤等を添加して得たペーストを
液晶ポリマー層5の上下表面に従来周知のドクタブレー
ド法等のシート成型法を採用して被覆層6を形成した
後、あるいは上記のペースト中に液晶ポリマー層5を浸
漬し垂直に引き上げることによって液晶ポリマー層5の
表面に被覆層6を形成した後、これを60〜100℃の温度
で5分〜3時間加熱・乾燥することにより製作される。
The insulating layer 1 has, for example, a particle size of 0.1.
A paste obtained by adding a thermosetting polyphenylene ether resin and an organic substance, a solvent, a plasticizer, a dispersant, etc. having a lower modulus of elasticity to an inorganic insulating powder such as silicon oxide having a thickness of about 15 μm is placed above and below the liquid crystal polymer layer 5. The surface of the liquid crystal polymer layer 5 is formed by forming the coating layer 6 on the surface by using a conventionally known sheet forming method such as a doctor blade method, or by immersing the liquid crystal polymer layer 5 in the above-mentioned paste and vertically lifting the same. After forming the coating layer 6, it is manufactured by heating and drying at a temperature of 60 to 100 ° C. for 5 minutes to 3 hours.

【0046】次に、絶縁層1には、上下面の少なくとも
1つの面に配線導体2が被着形成されている。配線導体
2は、その厚みが2〜30μmで銅・金等の良導電性の金
属箔から成り、多層配線基板4に搭載される電子部品7
を外部電気回路(図示せず)に電気的に接続する機能を
有する。
Next, the wiring conductor 2 is formed on the insulating layer 1 on at least one of the upper and lower surfaces. The wiring conductor 2 has a thickness of 2 to 30 μm and is made of a highly conductive metal foil such as copper or gold.
Is electrically connected to an external electric circuit (not shown).

【0047】このような配線導体2は、絶縁層1を複数
積層する際、配線導体2の周囲にボイドが発生するのを
防止するという観点から、被覆層6に、少なくとも配線
導体2の表面と被覆層6の表面とが平坦となるように埋
設されていることが好ましい。また、配線導体2を被覆
層6に埋設する際に、被覆層6の乾燥状態での気孔率を
3〜40体積%としておくと、配線導体2周囲の被覆層6
の樹脂盛り上がりを生じさせず平坦化することができる
とともに配線導体2と被覆層6の間に挟まれる空気の排
出を容易にして気泡の巻き込みを防止することができ
る。なお、乾燥状態での気孔率が40体積%を超えると、
複数積層した絶縁層1を加圧・加熱硬化した後に被覆層
6内に気孔が残存し、この気孔が空気中の水分を吸着し
て絶縁性が低下してしまうおそれがあるので、被覆層6
の乾燥状態での気孔率を3〜40体積%の範囲としておく
ことが好ましい。
In order to prevent the occurrence of voids around the wiring conductor 2 when a plurality of the insulating layers 1 are stacked, such a wiring conductor 2 is formed on the coating layer 6 at least on the surface of the wiring conductor 2. It is preferable that the surface of the coating layer 6 is buried so as to be flat. Further, when the porosity of the coating layer 6 in the dry state is set to 3 to 40% by volume when the wiring conductor 2 is embedded in the coating layer 6, the coating layer 6 around the wiring conductor 2 may be formed.
The resin can be flattened without causing resin swelling, and the air trapped between the wiring conductor 2 and the coating layer 6 can be easily discharged to prevent air bubbles from being trapped. When the porosity in the dry state exceeds 40% by volume,
After the plurality of laminated insulating layers 1 are pressurized and heated and hardened, pores remain in the coating layer 6, and the pores may absorb moisture in the air and the insulating property may be reduced.
It is preferable to set the porosity in the dry state to a range of 3 to 40% by volume.

【0048】このような被覆層6の乾燥状態での気孔率
は、被覆層6を液晶ポリマー層5の表面上に塗布し乾燥
する際に、乾燥温度や昇温速度等の乾燥条件を適宜調整
することにより気孔率を所望の値とすることができる。
The porosity of the coating layer 6 in the dry state can be adjusted by appropriately controlling the drying conditions such as the drying temperature and the heating rate when the coating layer 6 is applied on the surface of the liquid crystal polymer layer 5 and dried. By doing so, the porosity can be set to a desired value.

【0049】また、配線導体2と液晶ポリマー層5の間
に位置する被覆層6の厚みを3〜35μmの厚みとしてお
くことが好ましい。配線導体2と液晶ポリマー層5の間
に位置する被覆層6の厚みを3〜35μmの厚みとして、
配線導体2と誘電正接の低い液晶ポリマー層5とを近づ
けることにより、配線導体2周囲の誘電正接を低くする
ことができ、その結果、高周波領域、特に100MHz以
上の周波数領域における伝送特性をより向上させること
ができる。なお、被覆層6の厚みが3μm未満である
と、配線導体2の熱膨張・熱収縮により発生する応力を
被覆層6で有効に緩和することができず、配線導体2の
コーナー部からクラックが発生してしまう傾向があり、
35μmを超えると配線導体2周囲の誘電正接を低くする
効果が低下してしまう傾向がある。従って、配線導体2
と液晶ポリマー層5の間に位置する被覆層6の厚みを3
〜35μmの範囲としておくことが好ましい。
It is preferable that the thickness of the coating layer 6 located between the wiring conductor 2 and the liquid crystal polymer layer 5 is 3 to 35 μm. Assuming that the thickness of the coating layer 6 located between the wiring conductor 2 and the liquid crystal polymer layer 5 is 3 to 35 μm,
By bringing the wiring conductor 2 and the liquid crystal polymer layer 5 having a low dielectric loss tangent closer to each other, the dielectric loss tangent around the wiring conductor 2 can be reduced, and as a result, the transmission characteristics in the high frequency region, particularly in the frequency region of 100 MHz or more, are further improved. Can be done. If the thickness of the coating layer 6 is less than 3 μm, the stress generated by the thermal expansion and contraction of the wiring conductor 2 cannot be effectively relieved by the coating layer 6, and cracks are formed from the corners of the wiring conductor 2. Tend to occur,
If it exceeds 35 μm, the effect of lowering the dielectric loss tangent around the wiring conductor 2 tends to decrease. Therefore, the wiring conductor 2
The thickness of the coating layer 6 located between the
It is preferable that the thickness be in the range of about 35 μm.

【0050】さらに、絶縁層1に配設された配線導体2
の幅方向の断面形状を、絶縁層1側の底辺の長さが対向
する底辺の長さよりも短い台形状とするとともに、絶縁
層1側の底辺と側辺との成す角度を95〜150°とするこ
とが好ましい。絶縁層1に配設された配線導体2の幅方
向の断面形状を、絶縁層1側の底辺の長さが対向する底
辺の長さよりも短い台形状とするとともに、絶縁層1側
の底辺と側辺との成す角度を95〜150°とすることによ
り、配線導体2を被覆層6に埋設する際に、配線導体2
を被覆層6に容易に埋設することができる。なお、気泡
をかみ込むことなく埋設するという観点からは、絶縁層
1側の底辺と側辺との成す角度を95°以上とすることが
好ましく、配線導体2を微細化するという観点からは15
0°以下とすることが好ましい。
Further, the wiring conductor 2 provided on the insulating layer 1
Has a trapezoidal shape in which the length of the base on the insulating layer 1 side is shorter than the length of the opposing base, and the angle between the base and the side on the insulating layer 1 side is 95 to 150 °. It is preferable that The cross-sectional shape in the width direction of the wiring conductor 2 disposed on the insulating layer 1 is trapezoidal in which the length of the base on the side of the insulating layer 1 is shorter than the length of the opposite base, and the width of the base on the side of the insulating layer 1 is reduced. By setting the angle between the side and the side at 95 to 150 °, when the wiring conductor 2 is embedded in the coating layer 6, the wiring conductor 2
Can be easily embedded in the coating layer 6. In addition, from the viewpoint of burying without entrapping air bubbles, it is preferable that the angle between the bottom side and the side of the insulating layer 1 is 95 ° or more, and from the viewpoint of miniaturizing the wiring conductor 2, it is 15 °.
Preferably, it is 0 ° or less.

【0051】また、絶縁層1の層間において、配線導体
2の長さの短い底辺と液晶ポリマー層5との間に位置す
る被覆層6の厚みx(μm)が、上下の液晶ポリマー層
5間の距離をT(μm)、配線導体2の厚みをt(μ
m)としたときに、3μm≦0.5T−t≦x≦0.5T≦35
μm(ただし、8μm≦T≦70μm、1μm≦t≦32μ
m)であることが好ましい。
The thickness x (μm) of the coating layer 6 located between the short base of the wiring conductor 2 and the liquid crystal polymer layer 5 between the insulating layers 1 is set between the upper and lower liquid crystal polymer layers 5. Is T (μm), and the thickness of the wiring conductor 2 is t (μm).
m), 3 μm ≦ 0.5T−t ≦ x ≦ 0.5T ≦ 35
μm (8 μm ≦ T ≦ 70 μm, 1 μm ≦ t ≦ 32 μm
m) is preferred.

【0052】液晶ポリマー層6間の距離をT(μm)、
配線導体2の厚みをt(μm)としたときに、配線導体
2の長さの短い底辺と液晶ポリマー層5間の被覆層6の
厚みx(μm)を3μm≦0.5T−t≦x≦0.5T≦35μ
mとすることにより、配線導体2の長さの短い底辺と液
晶ポリマー層5間の距離および配線導体2の長さの長い
底辺と隣接する液晶ポリマー層5間の距離の差をt(μ
m)未満と小さくでき、配線導体2周囲の誘電正接バラ
ツキを小さなものとすることができ、その結果、伝送特
性が低下することを防止できる。従って、配線導体2の
台形状の上底側表面と液晶ポリマー層5の間に位置す
る、被覆層6の厚みx(μm)を、液晶ポリマー層6間
の距離をT(μm)、配線導体2の厚みをt(μm)と
したときに、3μm≦0.5T−t≦x≦0.5T≦35μmの
範囲とすることが好ましい。
The distance between the liquid crystal polymer layers 6 is T (μm),
When the thickness of the wiring conductor 2 is t (μm), the thickness x (μm) of the coating layer 6 between the short base of the wiring conductor 2 and the liquid crystal polymer layer 5 is 3 μm ≦ 0.5T−t ≦ x ≦ 0.5T ≦ 35μ
m, the difference between the distance between the short bottom of the wiring conductor 2 and the liquid crystal polymer layer 5 and the distance between the long bottom of the wiring conductor 2 and the adjacent liquid crystal polymer layer 5 is represented by t (μ).
m), the dispersion of the dielectric loss tangent around the wiring conductor 2 can be reduced, and as a result, a decrease in transmission characteristics can be prevented. Therefore, the thickness x (μm) of the covering layer 6 located between the trapezoidal upper bottom surface of the wiring conductor 2 and the liquid crystal polymer layer 5 is defined as T (μm), the distance between the liquid crystal polymer layers 6 is defined as T (μm). Assuming that the thickness of No. 2 is t (μm), it is preferable that the range of 3 μm ≦ 0.5T−t ≦ x ≦ 0.5T ≦ 35 μm is satisfied.

【0053】このような配線導体2は、絶縁層1となる
前駆体シートに、公知のフォトレジストを用いたサブト
ラクティブ法によりパターン形成した、例えば銅から成
る金属箔を転写法等により被着形成することにより形成
される。先ず、支持体と成るフィルム上に銅から成る金
属箔を接着剤を介して接着した金属箔転写用フィルムを
用意し、次に、フィルム上の金属箔を公知のフォトレジ
ストを用いたサブトラクティブ法を使用してパターン状
にエッチングする。この時、パターンの表面側の側面
は、フィルム側の側面に較べてエッチング液に接する時
間が長いためにエッチングされやすく、パターンの幅方
向の断面形状を台形状とすることができる。なお、台形
の形状は、エッチング液の濃度やエッチング時間を調整
することにより短い底辺と側辺とのなす角度を95〜150
°の台形状とすることができる。そして、この金属箔転
写用フィルムを絶縁層1と成る前駆体シートに積層し、
温度が100〜200℃で圧力が0.5〜10MPaの条件で10分
〜1時間ホットプレスした後、支持体と成るフィルムを
剥離除去して金属箔を絶縁層1と成る前駆体シート表面
に転写させることにより、台形状の短い底辺が被覆層6
に埋設された配線導体2を形成することができる。
Such a wiring conductor 2 is formed by forming a pattern on a precursor sheet to be the insulating layer 1 by a subtractive method using a known photoresist, for example, by applying a metal foil made of copper by a transfer method or the like. It is formed by doing. First, a metal foil transfer film is prepared by bonding a metal foil made of copper on a film serving as a support with an adhesive, and then the metal foil on the film is subjected to a subtractive method using a known photoresist. Is used to etch in a pattern. At this time, the side surface on the front surface side of the pattern is more likely to be etched because it has a longer time in contact with the etching solution than the side surface on the film side, and the cross-sectional shape in the width direction of the pattern can be trapezoidal. The trapezoidal shape can be formed by adjusting the concentration of the etching solution and the etching time so that the angle between the short bottom and the side is 95 to 150.
° trapezoidal shape. Then, this metal foil transfer film is laminated on a precursor sheet to be the insulating layer 1,
After hot pressing at a temperature of 100 to 200 ° C. and a pressure of 0.5 to 10 MPa for 10 minutes to 1 hour, the film serving as the support is peeled off and the metal foil is transferred to the surface of the precursor sheet serving as the insulating layer 1. As a result, the short base of the trapezoid is
Can be formed.

【0054】なお、配線導体2の長さの短い底辺と対向
する液晶ポリマー層5間の被覆層6の厚みx(μm)
は、金属箔転写時のホットプレスの圧力を調整すること
により3〜35μmの範囲とすることができる。また、配
線導体2は被覆層6との密着性を高めるためにその表面
にバフ研磨・ブラスト研磨・ブラシ研磨・薬品処理等の
処理で表面を粗化しておくことが好ましい。
The thickness x (μm) of the coating layer 6 between the liquid crystal polymer layer 5 and the base having the shorter length of the wiring conductor 2.
Can be set in the range of 3 to 35 μm by adjusting the pressure of the hot press during the transfer of the metal foil. The surface of the wiring conductor 2 is preferably roughened by a process such as buffing, blasting, brushing, or chemical treatment in order to enhance the adhesion to the coating layer 6.

【0055】また、絶縁層1には、直径が20〜150μm
程度の貫通導体3が形成されている。貫通導体3は、絶
縁層1を挟んで上下に位置する配線導体2を電気的に接
続する機能を有し、絶縁層1にレーザにより穿設加工を
施すことにより貫通孔を形成した後、この貫通孔に銅・
銀・金・半田等から成る導電性ペーストを従来周知のス
クリーン印刷法により埋め込むことにより形成される。
The insulating layer 1 has a diameter of 20 to 150 μm.
The through conductor 3 is formed to a degree. The through conductor 3 has a function of electrically connecting the wiring conductors 2 positioned above and below the insulating layer 1, and after forming a through hole by drilling the insulating layer 1 with a laser, Copper /
It is formed by embedding a conductive paste made of silver, gold, solder or the like by a conventionally known screen printing method.

【0056】本発明の多層配線基板4によれば、絶縁層
1を液晶ポリマー層5の上下面にポリフェニレンエーテ
ル系有機物およびこれより低弾性率の有機物から成る被
覆層6を有したものとしたことから、液晶ポリマー層5
が高耐熱性・高弾性率・高寸法安定性・低吸湿性であ
り、ガラスクロスのような強化材を用いなくとも絶縁層
1を構成することが可能となり、その結果、レーザによ
る穿設加工が容易となり微細で均一な貫通孔を形成でき
る。
According to the multilayer wiring board 4 of the present invention, the insulating layer 1 has the coating layer 6 made of a polyphenylene ether-based organic material and an organic material having a lower elastic modulus than the liquid crystal polymer layer 5 on the upper and lower surfaces. From the liquid crystal polymer layer 5
Has high heat resistance, high elastic modulus, high dimensional stability, and low hygroscopicity, making it possible to form the insulating layer 1 without using a reinforcing material such as glass cloth. As a result, laser drilling This facilitates fine and uniform through holes.

【0057】このような多層配線基板4は、上述したよ
うな方法で製作した絶縁層1と成る前駆体シートの所望
の位置に貫通導体3を形成した後、パターン形成した例
えば銅の金属箔を、温度が100〜200℃で圧力が0.5〜10
MPaの条件で10分〜1時間ホットプレスして転写し、
これらを積層して最終的に温度が150〜300℃で圧力が0.
5〜10MPaの条件で30分〜24時間ホットプレスして完
全硬化させることにより製作される。
In such a multilayer wiring board 4, a through conductor 3 is formed at a desired position on a precursor sheet serving as an insulating layer 1 manufactured by the method described above, and then a patterned metal foil of, for example, copper is formed. , Temperature is 100 ~ 200 ℃ and pressure is 0.5 ~ 10
Transfer by hot pressing under the condition of MPa for 10 minutes to 1 hour,
These are laminated and finally the temperature is 150-300 ° C and the pressure is 0.
It is manufactured by hot-pressing under conditions of 5 to 10 MPa for 30 minutes to 24 hours to completely cure.

【0058】かくして本発明の多層配線基板4によれ
ば、絶縁層1を、液晶ポリマー層5の表面にポリフェニ
レンエーテル系有機物およびこれよりも低弾性率の有機
物から成る被覆層6を形成して成るものとし、液晶ポリ
マー層5を、層方向における熱膨張係数が−20〜20pp
m/℃であるとともに、引張り弾性率が2GPa以上と
し、被覆層6を、層方向の引張り弾性率が0.2〜1.5GP
aとしたことから、高密度な配線を有するとともに、半
田耐熱性・絶縁性・高周波伝送特性・温度サイクル性に
優れた多層配線基板4とすることができる。
Thus, according to the multilayer wiring board 4 of the present invention, the insulating layer 1 is formed by forming the coating layer 6 made of a polyphenylene ether organic substance and an organic substance having a lower elastic modulus than the liquid crystal polymer layer 5 on the surface of the liquid crystal polymer layer 5. The liquid crystal polymer layer 5 has a coefficient of thermal expansion in the layer direction of -20 to 20 pp.
m / ° C., the tensile modulus is 2 GPa or more, and the coating layer 6 has a tensile modulus in the layer direction of 0.2 to 1.5 GP.
As a result, the multilayer wiring board 4 having high-density wiring and having excellent solder heat resistance, insulation properties, high-frequency transmission characteristics, and temperature cycle properties can be obtained.

【0059】なお、本発明の多層配線基板4は上述の実
施例に限定されるものではなく、本発明の要旨を逸脱し
ない範囲であれば種々の変更は可能であり、例えば、上
述の実施例では4層の絶縁層1を積層することによって
多層配線基板4を製作したが、2層や3層、あるいは5
層以上の絶縁層1を積層して多層配線基板4を製作して
もよい。また、本発明の多層配線基板4の上下表面に、
1層や2層、あるいは3層以上の有機樹脂を主成分とす
る絶縁層から成るビルドアップ層やソルダーレジスト層
を形成してもよい。
The multilayer wiring board 4 of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. Manufactured the multilayer wiring board 4 by laminating the four insulating layers 1;
The multilayer wiring board 4 may be manufactured by laminating more than one insulating layer 1. Further, on the upper and lower surfaces of the multilayer wiring board 4 of the present invention,
One, two, or three or more build-up layers or solder resist layers composed of an insulating layer mainly containing an organic resin may be formed.

【0060】[0060]

【発明の効果】 本発明の多層配線基板によれば、絶縁
層を、液晶ポリマー層の表面にポリフェニレンエーテル
系有機物およびこれよりも低弾性率の有機物から成る被
覆層を形成して成るものとしたことから、微細な貫通孔
を穿設することが可能となり、その結果、高密度な配線
を有する多層配線基板とすることができ、また、液晶ポ
リマー層と被覆層の誘電率の周波数挙動がほぼ等しいこ
とから、積層の際にわずかな厚みばらつきが生じたとし
ても高周波領域における伝送特性の低下を生じることの
ない高周波伝送特性に優れたものとすることができる。
また、液晶ポリマー層を、その層方向における熱膨張係
数が−20〜20ppm/℃であるとともに、引張り弾性率
が2GPa以上であるものとし、被覆層を、その層方向
の引張り弾性率が0.2〜1.5GPaであるものとしたこと
から、熱膨張係数が比較的大きいポリフェニレンエーテ
ル系有機物から成る被覆層が温度変化により熱膨張・熱
収縮する際に、この被覆層の弾性率が0.2〜1.5GPaと
低弾性であるために、被覆層の熱膨張・熱収縮が、熱膨
張係数が小さくて高弾性率の液晶ポリマー層に拘束さ
れ、被覆層の熱膨張・熱収縮を小さなものとすることが
できる。この結果、急激な温度変化をともなう温度サイ
クル試験においても被覆層にクラックが生じることが無
い。また、被覆層に無機絶縁粉末を高密度に充填する必
要がないことから、被覆層同士の密着性を良好とするこ
とができるとともに、絶縁層間で剥離して絶縁性が低下
してしまうこともない。
According to the multilayer wiring board of the present invention, the insulating layer is formed by forming a coating layer made of a polyphenylene ether-based organic substance and an organic substance having a lower elastic modulus than this on the surface of the liquid crystal polymer layer. Therefore, it is possible to form fine through holes, and as a result, it is possible to obtain a multilayer wiring board having high-density wiring, and the frequency behavior of the dielectric constant of the liquid crystal polymer layer and the coating layer is substantially reduced. Since they are equal to each other, even if a slight thickness variation occurs during lamination, it is possible to obtain excellent high-frequency transmission characteristics without lowering the transmission characteristics in the high-frequency region.
The liquid crystal polymer layer has a coefficient of thermal expansion in the layer direction of −20 to 20 ppm / ° C., a tensile modulus of elasticity of 2 GPa or more, and the coating layer has a tensile modulus of 0.2 to 0.2 GPa in the layer direction. Since it is assumed to be 1.5 GPa, when the coating layer made of a polyphenylene ether-based organic material having a relatively large coefficient of thermal expansion thermally expands and contracts due to temperature change, the elastic modulus of the coating layer is 0.2 to 1.5 GPa. Due to the low elasticity, the thermal expansion and thermal contraction of the coating layer are restrained by the liquid crystal polymer layer having a low thermal expansion coefficient and a high elastic modulus, and the thermal expansion and thermal contraction of the coating layer can be reduced. . As a result, cracks do not occur in the coating layer even in a temperature cycle test involving a rapid temperature change. Further, since it is not necessary to fill the coating layer with the inorganic insulating powder at high density, the adhesion between the coating layers can be improved, and the insulating property may be reduced due to peeling between the insulating layers. Absent.

【0061】また、本発明の多層配線基板によれば、被
覆層がポリフェニレンエーテル系有機物よりも低弾性率
の有機物を5〜60体積%含有することから、被覆層の弾
性率を容易に0.2〜1.5GPaの範囲にすることができ
る。
Further, according to the multilayer wiring board of the present invention, since the coating layer contains 5 to 60% by volume of an organic substance having a lower elastic modulus than that of the polyphenylene ether-based organic substance, the elastic modulus of the coating layer can be easily reduced to 0.2 to 60%. It can be in the range of 1.5 GPa.

【0062】さらに、本発明の多層配線基板によれば、
低弾性率の有機物が20〜80体積%のスチレン系有機物を
含有することから、このスチレン系有機物が低誘電率・
低誘電正接であることにより、100MHz以上の高周波
においても伝送特性に優れた多層配線基板とすることが
できる。
Further, according to the multilayer wiring board of the present invention,
Since the low elastic modulus organic material contains 20 to 80% by volume of the styrene organic material, the styrene organic material has a low dielectric constant
By having a low dielectric loss tangent, a multilayer wiring board having excellent transmission characteristics even at a high frequency of 100 MHz or more can be obtained.

【0063】また、本発明の多層配線基板によれば、被
覆層の厚みの合計を絶縁層の厚みの10〜70%としたこと
から、配線導体との密着性が良好で高耐熱性・低吸湿性
・高寸法安定性の多層配線基板とすることができる。
According to the multilayer wiring board of the present invention, since the total thickness of the covering layer is 10 to 70% of the thickness of the insulating layer, the adhesion to the wiring conductor is good, and the heat resistance and the heat resistance are low. It is possible to obtain a multi-layer wiring board having hygroscopicity and high dimensional stability.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の多層配線基板に半導体素子を搭載して
成る混成集積回路の実施の形態の一例である。
FIG. 1 is an example of an embodiment of a hybrid integrated circuit in which a semiconductor element is mounted on a multilayer wiring board of the present invention.

【図2】本発明の多層配線基板の要部拡大断面図であ
る。
FIG. 2 is an enlarged sectional view of a main part of the multilayer wiring board of the present invention.

【符号の説明】[Explanation of symbols]

1・・・・・・・・・・・絶縁層 2・・・・・・・・・・・配線導体 3・・・・・・・・・・・貫通導体 4・・・・・・・・・・・多層配線基板 5・・・・・・・・・・・液晶ポリマー層 6・・・・・・・・・・・被覆層 1. Insulating layer 2. Wiring conductor 3. Through conductor 4. .... Multilayer wiring board 5 ... Liquid crystal polymer layer 6 ... Coating layer

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4J002 AC01X AC03X AC06X AC08X AC09X AC11X BB15X BB18X BG04X BN11X BN13X BN15X BN16X BP01X CH04X CH07W CK02X CN02X CP03X GQ01 5E346 AA02 AA12 AA15 AA22 AA32 AA43 AA51 CC02 CC08 CC32 DD02 DD12 DD32 EE06 EE07 EE09 EE13 EE18 FF01 GG15 GG28 HH11 HH16 HH18 HH26 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4J002 AC01X AC03X AC06X AC08X AC09X AC11X BB15X BB18X BG04X BN11X BN13X BN15X BN16X BP01X CH04X CH07W CK02X CN02X CP03X GQ01 5E346 AA12 A32 AA32 AA12 AA12 AA12 AA12 AA12 AA12 CC EE13 EE18 FF01 GG15 GG28 HH11 HH16 HH18 HH26

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 有機材料から成り、上下面の少なくとも
1つの面に金属箔から成る配線導体が配設された複数の
絶縁層を積層して成るとともに、該絶縁層を挟んで上下
に位置する前記配線導体間を前記絶縁層に形成された貫
通導体を介して電気的に接続した多層配線基板であっ
て、前記絶縁層は、液晶ポリマー層の上下面にポリフェ
ニレンエーテル系有機物およびこれよりも低弾性率の有
機物から成る被覆層を形成して成り、前記液晶ポリマー
層は、層方向における熱膨張係数が−20〜20ppm
/℃であるとともに、引張り弾性率が2GPa以上であ
り、前記被覆層は、層方向の引張り弾性率が0.2〜
1.5GPaであることを特徴とする多層配線基板。
1. An insulating material comprising a plurality of insulating layers made of an organic material and having a wiring conductor made of a metal foil disposed on at least one of upper and lower surfaces, and located above and below the insulating layer. A multilayer wiring board in which the wiring conductors are electrically connected to each other via a through conductor formed in the insulating layer, wherein the insulating layer has a polyphenylene ether-based organic substance on upper and lower surfaces of a liquid crystal polymer layer and a lower conductive material. The liquid crystal polymer layer has a thermal expansion coefficient in a layer direction of -20 to 20 ppm.
/ ° C, the tensile elastic modulus is 2 GPa or more, and the coating layer has a tensile elastic modulus in a layer direction of 0.2 to 0.2 GPa.
A multilayer wiring board having a pressure of 1.5 GPa.
【請求項2】 前記被覆層は、前記低弾性率の有機物を
5〜60体積%含有することを特徴とする請求項1記載
の多層配線基板。
2. The multilayer wiring board according to claim 1, wherein the coating layer contains the organic material having a low elastic modulus in an amount of 5 to 60% by volume.
【請求項3】 前記低弾性率の有機物は、20〜80体
積%のスチレン系有機物を含有することを特徴とする請
求項1または請求項2記載の多層配線基板。
3. The multilayer wiring board according to claim 1, wherein the organic material having a low elastic modulus contains 20 to 80% by volume of a styrene-based organic material.
【請求項4】 前記被覆層の厚みの合計が前記絶縁層の
厚みの10〜70%であることを特徴とする請求項1乃
至請求項3のいずれかに記載の多層配線基板。
4. The multilayer wiring board according to claim 1, wherein the total thickness of said coating layer is 10 to 70% of the thickness of said insulating layer.
JP2001161689A 2001-02-28 2001-05-30 Multilayer wiring board Expired - Fee Related JP4508472B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001161689A JP4508472B2 (en) 2001-05-30 2001-05-30 Multilayer wiring board
US10/091,114 US6663946B2 (en) 2001-02-28 2002-02-28 Multi-layer wiring substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001161689A JP4508472B2 (en) 2001-05-30 2001-05-30 Multilayer wiring board

Publications (2)

Publication Number Publication Date
JP2002353634A true JP2002353634A (en) 2002-12-06
JP4508472B2 JP4508472B2 (en) 2010-07-21

Family

ID=19004928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001161689A Expired - Fee Related JP4508472B2 (en) 2001-02-28 2001-05-30 Multilayer wiring board

Country Status (1)

Country Link
JP (1) JP4508472B2 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697614A (en) * 1992-09-10 1994-04-08 Mitsubishi Shindoh Co Ltd Multilayer board
JPH09174786A (en) * 1995-12-22 1997-07-08 Japan Gore Tex Inc Oriented material of liquid crystal polymer film having adhesive surface or metallic surface
JPH1034742A (en) * 1996-07-19 1998-02-10 Japan Gore Tex Inc Liquid crystal polymer film and its laminate
JPH10178241A (en) * 1996-12-17 1998-06-30 Multi:Kk Printed wiring board and method for manufacturing the same
JPH11140298A (en) * 1997-11-12 1999-05-25 Mitsubishi Eng Plast Corp Highly vibration-damping molded form for oa equipment part
JP2000094586A (en) * 1998-09-17 2000-04-04 Asahi Chem Ind Co Ltd Heat-resistant film laminate and its manufacture
JP2000277926A (en) * 1999-03-19 2000-10-06 Kanegafuchi Chem Ind Co Ltd Calculation method for dimension change rate of multilayer bonding sheet, its calculation system, multilayer bonding sheet and flexible both-side metal- plated laminated board thereby, and manufacture thereof
JP2001053198A (en) * 1999-08-12 2001-02-23 Shinko Electric Ind Co Ltd Method for manufacturing multilayer wiring board

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0697614A (en) * 1992-09-10 1994-04-08 Mitsubishi Shindoh Co Ltd Multilayer board
JPH09174786A (en) * 1995-12-22 1997-07-08 Japan Gore Tex Inc Oriented material of liquid crystal polymer film having adhesive surface or metallic surface
JPH1034742A (en) * 1996-07-19 1998-02-10 Japan Gore Tex Inc Liquid crystal polymer film and its laminate
JPH10178241A (en) * 1996-12-17 1998-06-30 Multi:Kk Printed wiring board and method for manufacturing the same
JPH11140298A (en) * 1997-11-12 1999-05-25 Mitsubishi Eng Plast Corp Highly vibration-damping molded form for oa equipment part
JP2000094586A (en) * 1998-09-17 2000-04-04 Asahi Chem Ind Co Ltd Heat-resistant film laminate and its manufacture
JP2000277926A (en) * 1999-03-19 2000-10-06 Kanegafuchi Chem Ind Co Ltd Calculation method for dimension change rate of multilayer bonding sheet, its calculation system, multilayer bonding sheet and flexible both-side metal- plated laminated board thereby, and manufacture thereof
JP2001053198A (en) * 1999-08-12 2001-02-23 Shinko Electric Ind Co Ltd Method for manufacturing multilayer wiring board

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