JP2002353388A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2002353388A JP2002353388A JP2001162282A JP2001162282A JP2002353388A JP 2002353388 A JP2002353388 A JP 2002353388A JP 2001162282 A JP2001162282 A JP 2001162282A JP 2001162282 A JP2001162282 A JP 2001162282A JP 2002353388 A JP2002353388 A JP 2002353388A
- Authority
- JP
- Japan
- Prior art keywords
- housing
- semiconductor device
- heat
- room temperature
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体装置及びそ
の製造方法に係り、配線基板上に搭載された半導体装置
を、筐体内に放熱性良好に、かつ外部応力に対する歪を
低減することを考慮して収納された半導体装置、特に高
速光通信用素子を含む半導体装置に好適な半導体装置及
びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and considers that a semiconductor device mounted on a wiring board has good heat dissipation in a housing and reduces distortion due to external stress. The present invention relates to a semiconductor device suitable for a semiconductor device housed in such a manner, particularly a semiconductor device including a high-speed optical communication element, and a method for manufacturing the same.
【0002】[0002]
【従来の技術】電子機器内部に実装された発熱素子を有
する電子部品からの熱を外部に放熱する手段としては、
電子部品上面に放熱フィンを取り付け、筐体内部の空気
中に放熱フィンを介して放熱させる方法が一般的であ
る。2. Description of the Related Art Means for dissipating heat from an electronic component having a heating element mounted inside an electronic device to the outside include:
A general method is to attach a heat radiation fin to the upper surface of the electronic component and dissipate heat into the air inside the housing via the heat radiation fin.
【0003】しかしながら、例えば、モバイル機器や携
帯電話機器に代表される急速な電子機器の小型化・薄型
化に対して、放熱フィンのような空間体積が必要な放熱
形態をとることが難しい場合が増えてきており、電子機
器の筐体そのものを放熱媒体として用いる放熱方式が重
要になってきている。However, for example, in order to rapidly reduce the size and thickness of electronic devices typified by mobile devices and portable telephone devices, it is sometimes difficult to adopt a heat radiation form that requires a space volume such as a radiation fin. The heat radiation method using the housing of the electronic device itself as a heat radiation medium is becoming important.
【0004】この場合、配線基板に実装された発熱素子
を含む電子部品からの熱を高熱伝導性の部材を介して基
板側から筐体へ放熱させる放熱方式と、電子部品から直
接筐体へ放熱させる方式とが提案されている。In this case, a heat radiation system in which heat from an electronic component including a heating element mounted on a wiring board is radiated from the substrate side to the housing through a member having high thermal conductivity, and a heat radiation system from the electronic component directly to the housing. Has been proposed.
【0005】例えば、特開平11−163564号公報
で開示されている発明においては、電子部品が実装され
た配線基板(以下、実装基板と略称)を高熱伝導性の弾
性体を介して筐体に固定することで、電子部品から実装
基板、実装基板から電子機器筐体への放熱を実現する方
法を提案している。For example, in the invention disclosed in Japanese Patent Application Laid-Open No. 11-163564, a wiring board on which electronic components are mounted (hereinafter abbreviated as a mounting board) is mounted on a housing via an elastic body having high thermal conductivity. By fixing, a method of realizing heat radiation from the electronic component to the mounting board and from the mounting board to the electronic device housing is proposed.
【0006】また、特開平08−139236号公報で
開示されている発明においては、発熱素子の上面に取り
付けた放熱板と筐体との間に、高熱伝導性の部材(ここ
ではグリース)を充填固着して、直接電子部品から筐体
への放熱を実現する方法を提案している。In the invention disclosed in Japanese Patent Application Laid-Open No. 08-139236, a highly thermally conductive member (here, grease) is filled between a housing and a heat sink attached to the upper surface of a heating element. It proposes a method of realizing heat radiation from the electronic component directly to the housing by fixing.
【0007】[0007]
【発明が解決しようとする課題】放熱効率を考えた場
合,実装基板を介して放熱経路を取ろうとすると、一般
的に使用されている電子機器のマザーボード(配線基
板)は熱伝導率の低いFR−4等の有機系の材料である
ことがほとんどであるため、放熱効率は悪化する。Considering the heat radiation efficiency, when trying to take a heat radiation path through a mounting board, a mother board (wiring board) of a generally used electronic device has a low thermal conductivity FR. In most cases, it is an organic material such as -4, so that the heat radiation efficiency deteriorates.
【0008】したがって、発熱している半導体装置等の
電子部品から実装基板を収納する筐体へ直接放熱させる
方が放熱経路としても最短であり放熱効率の最も高い放
熱方式である。Therefore, it is the shortest heat radiating route and the heat radiating method having the highest heat radiating efficiency to radiate heat directly from the heat-generating electronic components such as the semiconductor device to the housing housing the mounting substrate.
【0009】しかしながら、例えば、特開平08−23
36号公報で開示されているようにグリースのような充
填部材で実装基板上の電子部品と筐体との隙間を固着す
ることは、塗布量や塗布面の均一性を管理することや、
電子部品に不具合が生じた場合のリペアー工程が非常に
面倒であり、さらにはグリースを硬化させるための新た
な高温加熱工程も必要となる。However, for example, Japanese Patent Application Laid-Open No. 08-23 / 08
Fixing the gap between the electronic component on the mounting board and the housing with a filling member such as grease as disclosed in Japanese Patent No. 36, managing the application amount and uniformity of the application surface,
The repair process when the electronic component is defective is very troublesome, and further requires a new high-temperature heating process for hardening the grease.
【0010】これに対して、シリコーン系のゴムシート
を電子部品と筐体との隙間に挟みこむことによって、グ
リースを充填固着した場合と同様な最短の放熱経路で放
熱を実現できる方法がある。On the other hand, there is a method in which a silicone-based rubber sheet is sandwiched in a gap between an electronic component and a housing, so that heat can be radiated through the shortest heat radiating path as in the case where grease is filled and fixed.
【0011】この場合には、ゴムシートを電子部品の上
に載せるだけでよいため、工程管理も簡単で低コストな
プロセスで対応可能となり、その後のリペアーも容易で
あるという特長がある。In this case, since it is only necessary to place the rubber sheet on the electronic component, there is a feature that the process can be easily controlled and a low-cost process can be used, and the subsequent repair is easy.
【0012】ただし、この放熱方式では、電子部品と筐
体との隙間管理が非常に重要となり、実際の隙間が想定
していた隙間よりも大きいとシートは隙間を充填しきれ
ず放熱効率は極端に悪化し、逆に想定していた隙間より
小さいと、電子部品を筐体に収納する際に発生するシー
トの圧縮率が当初の設計値より高くなり、電子部品や筐
体に高い荷重が加わってしまうという問題がある。However, in this heat radiation system, the management of the gap between the electronic component and the housing is very important. If the actual gap is larger than the assumed gap, the sheet cannot fill the gap and the heat radiation efficiency is extremely high. If it gets worse and conversely, if it is smaller than the assumed gap, the compression rate of the sheet generated when storing the electronic components in the housing will be higher than the original design value, and a high load will be applied to the electronic components and the housing. Problem.
【0013】さらに、シリコーンゴムタイプの熱伝導部
材では、この部材中に充填するフィラーの充填量に応じ
て熱伝導率が変化するため、高熱伝導な仕様ほど充填量
が増加し硬度が高いということになり、同じ圧縮率に対
してより高い荷重が加わってしまうことになる。Further, in the heat conductive member of the silicone rubber type, since the heat conductivity changes according to the filling amount of the filler to be filled in the member, the higher the heat conducting specification, the larger the filling amount and the higher the hardness. , And a higher load is applied to the same compression ratio.
【0014】特に筐体内に収納される電子部品が光学系
を利用した高速光通信モジュール等では、伝送ロスを小
さくするため部品の搭載位置決め精度が設計上非常に重
要であり、シート材の圧縮装着によって筐体や電子部品
を搭載したモジュール基板に変形を加えることは好まし
くない。In particular, in a high-speed optical communication module or the like in which electronic components housed in a housing use an optical system, the mounting positioning accuracy of components is very important in designing to reduce transmission loss. It is not preferable to deform the module board on which the housing and the electronic components are mounted.
【0015】さらに、発熱量の大きい電子部品を搭載し
たモジュールでは、筐体材料として熱伝導率の高いアル
ミ材を適用することが望ましく、将来的な低コスト化に
対応するためには加工コストの高いメタル筐体をプラス
チック筐体に変更することも重要であり、強度の点では
いずれの場合も筐体がより低剛性な方向に向かうため、
シートの圧縮率を上げて高い荷重を加えることは適切で
ない。Further, in a module on which electronic components generating a large amount of heat are mounted, it is desirable to use an aluminum material having a high thermal conductivity as a casing material. It is also important to change the high metal housing to a plastic housing, and in any case, the housing is going to be less rigid in terms of strength,
It is not appropriate to increase the compressibility of the sheet and apply a high load.
【0016】一方、設計的には電子部品と筐体との隙間
がシートの初期厚さより広くなってしまい、わずかでも
隙間を残すことは絶対回避する必要がある。そのため、
筐体の厚さ方向の寸法誤差や電子部品の実装高さのバラ
ツキも考慮した上で、かなり高めの圧縮率で設計せざる
を得ない。したがって、通常の組立て工程では電子部品
や筐体に高い荷重が加わることが想定されるため、理想
機能としては、シートの圧縮率が高くてもより低負荷で
ゴムシートを装着できる放熱方式を確立する必要があ
る。On the other hand, in terms of design, the gap between the electronic component and the housing becomes wider than the initial thickness of the sheet, and it is absolutely necessary to avoid leaving a slight gap. for that reason,
In consideration of dimensional errors in the thickness direction of the housing and variations in the mounting height of electronic components, it is necessary to design at a considerably high compression ratio. Therefore, it is expected that high loads will be applied to the electronic components and the housing during the normal assembly process, and as an ideal function, a heat dissipation method that can mount the rubber sheet with a lower load even if the sheet compression ratio is high has been established. There is a need to.
【0017】本発明の目的は、このような観点に鑑み、
発熱素子を含む電子部品と筐体との間に隙間を発生させ
ずに熱伝導部材を低負荷で確実に埋め込み、放熱性良好
にして筐体ひずみが低減された信頼性の高い半導体装置
を及びその製造方法を提供することにある。[0017] The object of the present invention has been made in view of such a viewpoint.
A reliable semiconductor device in which the heat conduction member is reliably embedded at a low load without generating a gap between the electronic component including the heating element and the housing, and the heat dissipation is improved to reduce the housing distortion. It is to provide a manufacturing method thereof.
【0018】[0018]
【課題を解決するための手段】上記本発明の目的を達成
できる半導体装置の特徴とするところは、配線基板と、
前記配線基板上に電極接続用導電材料を介して電気的に
接続、搭載された半導体装置と、前記配線基板と前記半
導体装置とを収納する筐体と、前記半導体装置と筐体と
の隙間に配置され、前記半導体装置の熱を筐体に伝導す
る熱伝導体とを備えた半導体装置であって、前記筐体
は、互いに開口部を有する上部筐体と下部筐体とに分割
され、かつ、一方の開口部が他方の開口部に勘合する構
造を有すると共に、前記筐体の周縁部には、前記配線基
板上に搭載された半導体装置と熱伝導体とを筐体内に収
納保持する嵌合圧着手段を有し、前記熱伝導体は、常温
において前記電極接続用導電材料より柔らかく、かつ、
常温より高い温度域で加熱したときの圧縮荷重が常温で
の圧縮荷重より小さい熱伝導性弾性体からなり、前記半
導体装置と筐体との隙間に前記温度域で加熱され圧縮装
着されていることにある。A feature of a semiconductor device that can achieve the above object of the present invention is that a wiring board,
A semiconductor device electrically connected to and mounted on the wiring substrate via an electrode connecting conductive material, a housing for housing the wiring substrate and the semiconductor device, and a gap between the semiconductor device and the housing. A semiconductor device provided with a heat conductor that conducts heat of the semiconductor device to a housing, wherein the housing is divided into an upper housing and a lower housing having openings, and A fitting for accommodating the semiconductor device mounted on the wiring board and the heat conductor in the housing at a peripheral portion of the housing while having a structure in which one opening fits into the other opening. It has bonding / compression bonding means, and the thermal conductor is softer than the conductive material for electrode connection at normal temperature, and
A compressive load when heated in a temperature range higher than room temperature is made of a thermally conductive elastic body that is smaller than a compressive load at room temperature, and is heated and compressed in a gap between the semiconductor device and a housing in the temperature range. It is in.
【0019】そして、好ましくは前記筐体内壁には、前
記配線基板上の半導体装置に電気的に接続された電極端
子と、光ファイバに接続された光学端子とを有する光素
子を保持していることである。これによって、高速光通
信用素子を含む半導体装置が実現できる。光素子として
は、発光ダイオード(LED)や半導体レーザ等の電気
信号を光信号に変換する発光素子及び、光信号を電気信
号に変換する受光素子を含む。 配線基板としては、一般的にセラミックス製の配線基板
が用いられるが、用途によっては耐熱樹脂製の多層配線
基板でもよい。この配線基板上には、搭載部品として半
導体素子のベアチップや半導体パッケージ等が実装され
る。搭載部品と配線基板との電気的な接続は、電極接続
用導電材料として一般にハンダが用いられるが、ハンダ
以外の導電性接着剤を用いることもできる。Preferably, an optical element having an electrode terminal electrically connected to the semiconductor device on the wiring board and an optical terminal connected to an optical fiber is held on the inner wall of the housing. That is. Thus, a semiconductor device including a high-speed optical communication element can be realized. The optical element includes a light emitting element such as a light emitting diode (LED) or a semiconductor laser which converts an electric signal into an optical signal, and a light receiving element which converts an optical signal into an electric signal. As the wiring substrate, a wiring substrate made of ceramics is generally used, but a multilayer wiring substrate made of a heat-resistant resin may be used depending on the application. On this wiring board, a bare chip of a semiconductor element, a semiconductor package, and the like are mounted as mounted components. Solder is generally used as a conductive material for electrode connection for electrical connection between the mounted component and the wiring board, but a conductive adhesive other than solder can also be used.
【0020】筐体は、半導体装置を収納し、外界から保
護するため或る程度の強度を必要とするが、収納された
半導体装置からの熱を外部に効率よく放出するため熱伝
導率の高い材料で構成される。また、筐体を成型加工す
る上から加工性良好な材料が望ましく、例えばアルミニ
ウム、アルミ合金、銅亜鉛合金(真ちゅう)等の金属材
料が用いられる。その他、用途によっては、熱伝導性を
高めるために金属やセラミックスの粉末をフィラーとし
て充填したプラスチックスも使用できる。 筐体の構造について説明すると、上部筐体と下部筐体と
に2分割された所定の深さを有する筐体は、いずれか一
方の筐体が他方の筐体に嵌合し、周縁部に設けられた、
例えばネジ構造、バネやピンを用いた締め付け構造等の
嵌合圧着手段により、両者を着脱自在に圧着固定する。The housing needs a certain strength to house the semiconductor device and protect it from the outside, but has a high thermal conductivity to efficiently release the heat from the housed semiconductor device to the outside. It is composed of materials. Further, a material having good workability is desirable from the viewpoint of molding the casing, and for example, a metal material such as aluminum, an aluminum alloy, a copper-zinc alloy (brass) is used. In addition, depending on the application, plastics filled with metal or ceramic powder as a filler to enhance thermal conductivity can be used. To describe the structure of the housing, a housing having a predetermined depth divided into an upper housing and a lower housing has one of the housings fitted to the other housing and has a peripheral portion. Established,
For example, both are removably crimped and fixed by a fitting crimping means such as a screw structure or a tightening structure using a spring or a pin.
【0021】そして、これらの筐体に半導体装置が搭載
された配線基板を収納するに際しては、一方の筐体に半
導体装置が搭載された配線基板を挿入した後、他方の筐
体を嵌合し、周縁部に設けられた圧着手段により圧着固
定する。When housing the wiring board on which the semiconductor device is mounted in these housings, the wiring board on which the semiconductor device is mounted is inserted into one housing, and then the other housing is fitted. Then, it is crimped and fixed by crimping means provided on the peripheral portion.
【0022】筐体の寸法関係について詳述すると、この
圧着固定した時に、半導体装置の背面とその背後の筐体
内壁面との間に装着される熱伝導体の圧縮前の厚さより
も狭い隙間が形成されるように設計されている。したが
って、筐体を圧縮固定することにより、この隙間に介挿
された熱伝導体は圧縮装着される。この熱伝導体が圧縮
装着される程度は、わずかでも圧縮されていればそれな
りの効果が認められるが、好ましくは圧縮以前の熱伝導
体の厚さの40〜70%の範囲内に圧縮されるように筐
体を圧縮固定することが望ましい。The dimensional relationship of the housing will be described in detail. When this crimping and fixing is performed, a gap narrower than the uncompressed thickness of the heat conductor mounted between the back surface of the semiconductor device and the inner wall surface of the housing behind the semiconductor device. Designed to be formed. Accordingly, by compressing and fixing the housing, the heat conductor inserted in the gap is compression-mounted. The degree of compression of the heat conductor can be recognized as long as the heat conductor is slightly compressed. However, it is preferable that the heat conductor is compressed within a range of 40 to 70% of the thickness of the heat conductor before compression. It is desirable to compress and fix the housing as described above.
【0023】本発明で用いる熱伝導体についての実験事
実に基づく詳細な説明は、「発明の実施の形態」の項で
行うとして、ここでは熱伝導体の材質、形状、寸法等に
ついて概要を説明する。A detailed description of the heat conductor used in the present invention based on experimental facts will be given in the section of “Embodiments of the Invention”. Here, the outline of the material, shape, dimensions, etc. of the heat conductor will be described. I do.
【0024】先ず、熱伝導体の材質については、その機
能の一つが半導体装置から発生する熱を筐体に効率よく
伝導することにあることから、例えば1.0〜10.0
W/m・K程度の熱伝導率を有していることが望まし
い。First, the material of the heat conductor is, for example, 1.0 to 10.0 because one of its functions is to efficiently conduct heat generated from the semiconductor device to the housing.
It is desirable to have a thermal conductivity of about W / m · K.
【0025】また、熱伝導体は、筐体内に収納される半
導体装置と筐体内壁間の隙間に圧縮装着されるので、上
記の通り特定の弾性を有していなければならない。それ
故に、本発明で使用する熱伝導体は、熱伝導性と弾性と
を有していることから熱伝導性弾性体と定義することが
できる。Further, since the heat conductor is compression-mounted in the gap between the semiconductor device housed in the housing and the inner wall of the housing, it must have a specific elasticity as described above. Therefore, the thermal conductor used in the present invention has thermal conductivity and elasticity, and can be defined as a thermally conductive elastic body.
【0026】本発明で使用する熱伝導体は、圧縮装着時
の圧縮率が高くても低負荷な状態で隙間に圧縮装着され
ていることが重要であり、上記の通り、配線基板に半導
体装置が電気的に接続される、例えばハンダのごとき電
極接続用導電材料よりも常温において柔らかく、かつ、
常温より高い温度域で加熱したときの圧縮荷重が常温で
の圧縮荷重より小さい熱伝導性弾性体からなる。好まし
い常温(室温と同義)での弾性率は、0.5〜5.0M
Paの範囲である。It is important that the heat conductor used in the present invention be compressed and mounted in the gap with a low load even if the compression ratio during compression mounting is high. Is electrically connected, for example, softer at room temperature than a conductive material for electrode connection such as solder, and
The compression load when heated in a temperature range higher than room temperature is smaller than the compression load at room temperature. A preferable elastic modulus at normal temperature (synonymous with room temperature) is 0.5 to 5.0M.
Pa range.
【0027】また、熱伝導体の変形抵抗を単位圧縮率あ
たりに必要な荷重であらわしたとき、30℃での変形抵
抗に対して、100℃での変形抵抗が1/3〜1/2で
あることが望ましい。When the deformation resistance of the heat conductor is represented by a load required per unit compressibility, the deformation resistance at 100 ° C. is 1/3 to 1/2 of the deformation resistance at 30 ° C. Desirably.
【0028】熱伝導体の好ましい形状はシート状に成形
されたものであり、寸法についてはシートの厚さが筐体
内に収納される半導体装置と筐体内壁間の隙間より厚
く、好ましくは40〜70%圧縮された状態で隙間に装
着されることを考慮した厚みが選ばれる。The preferred shape of the heat conductor is a sheet shape, and the dimensions of the sheet are larger than the gap between the semiconductor device housed in the housing and the inner wall of the housing. The thickness is selected in consideration of being mounted in the gap with 70% compression.
【0029】熱伝導体の加熱は、常温より高い温度、好ま
しくは、50〜100℃であり、加熱のタイミングは、筐
体を嵌合圧着する際に加熱保持しながら圧着固定する
か、もしくは圧着固定した後で、上記所定の温度に加熱
保持してもよい。The heating of the heat conductor is carried out at a temperature higher than room temperature, preferably 50 to 100 ° C. The timing of the heating is as follows: After being fixed, it may be heated and held at the predetermined temperature.
【0030】また、熱伝導体の装着方法としては、位置
ずれが生じないように発熱素子を含む半導体装置の背
面、もしくは半導体装置に対向する筐体内壁面に予め熱
伝導性の良い接着剤で仮固定しておくことが望ましい。As a method of mounting the heat conductor, an adhesive having good heat conductivity is temporarily attached to the back surface of the semiconductor device including the heating element or the inner wall surface of the housing facing the semiconductor device so as not to displace. It is desirable to keep it fixed.
【0031】熱伝導体となる好ましいシート材として
は、一般に熱抵抗が低く、柔軟性と粘着性に優れ、かつ
硬度調整が可能な、例えば、シリコーン系のゴムシート
の如き高熱伝導性のゴム質シートが挙げられる。As a preferable sheet material to be a heat conductor, a rubber material having a high heat conductivity, such as a silicone rubber sheet, which generally has a low heat resistance, is excellent in flexibility and tackiness, and is capable of adjusting the hardness. Sheet.
【0032】ここで要求されるゴムシートの好ましい特
性としては、はんだやAuバンプ等の電極接続用導電材
料を補強する封止材(アンダーフィル樹脂と称される)
や、例えばモジュール基板の如き実装基板よりは剛性は
低いが、熱伝導率は高いことであり、そのような特性を
備えた材料が熱伝導体を構成するゴムシートとして用い
られる。The preferable properties of the rubber sheet required here include a sealing material (referred to as an underfill resin) for reinforcing a conductive material for electrode connection such as solder or Au bump.
For example, the rigidity is lower than that of a mounting substrate such as a module substrate, but the thermal conductivity is high, and a material having such characteristics is used as a rubber sheet constituting a thermal conductor.
【0033】次に示す本発明の半導体装置の構成例は、
実用上好ましい半導体モジュールを筐体に収納するもの
であり、そのため配線基板をモジュール基板とし、それ
に搭載する半導体装置を半導体パッケージとするもので
ある。すなわち、この発明の特徴は、モジュール基板
と、前記モジュール基板上に第1のハンダを介して電気
的に接続、搭載された半導体パッケージと、 前記モジ
ュール基板と前記半導体パッケージとを収納する筐体
と、 前記半導体パッケージと筐体との隙間に配置さ
れ、前記半導体パッケージの熱を筐体に伝導する熱伝導
体とを備えた半導体装置であって、前記筐体は、互いに
開口部を有する上部筐体と下部筐体とに分割され、か
つ、一方の開口部が他方の開口部に勘合する構造を有す
ると共に、前記筐体の周縁部には、前記モジュール基板
上に搭載された半導体パッケージと熱伝導体とを筐体内
に収納保持する嵌合圧着手段を有し、前記半導体パッケ
ージには、パッケージ基板に半導体素子が第2のハンダ
を介して電気的に接続、搭載され、前記熱伝導体は、常
温において前記第1、第2いずれのハンダより柔らか
く、かつ、常温より高くハンダ・リフロー温度よりも低
い温度域で加熱したときの圧縮荷重が常温での圧縮荷重
より小さい弾性体からなり、前記半導体パッケージと筐
体との隙間に前記温度域で加熱され圧縮装着されている
ことにある。The following is an example of the configuration of the semiconductor device of the present invention.
A practically preferable semiconductor module is housed in a housing. Therefore, a wiring board is used as a module board, and a semiconductor device mounted thereon is used as a semiconductor package. That is, a feature of the present invention is a module substrate, a semiconductor package electrically connected and mounted on the module substrate via a first solder, and a housing for accommodating the module substrate and the semiconductor package. A semiconductor device, comprising: a heat conductor that is disposed in a gap between the semiconductor package and a housing and conducts heat of the semiconductor package to the housing, wherein the housing has an opening with respect to each other. It is divided into a body and a lower housing, and has a structure in which one opening fits into the other opening, and a semiconductor package mounted on the module substrate is connected to the periphery of the housing by heat. The semiconductor package includes a crimping means for housing and holding the conductor in a housing, and the semiconductor package is electrically connected to and mounted on a package substrate via a second solder. The heat conductor is softer at room temperature than the first and second solders, and has an elasticity such that a compression load when heated in a temperature range higher than room temperature and lower than a solder reflow temperature is smaller than a compression load at room temperature. The semiconductor package is heated and compressed and mounted in the gap between the semiconductor package and the housing in the temperature range.
【0034】また、上記本発明の目的を達成できる半導
体装置の製造方法の特徴とするところは、発熱素子を有
する半導体装置を配線基板上に電極接続用導電材料を介
して電気的に接続、搭載する工程と、前記半導体装置が
搭載された配線基板を上部筐体と下部筐体とに分割され
た筐体内に収納する工程とを有してなる半導体装置の製
造方法であって、前記半導体装置が搭載された配線基板
を筐体内に収納する工程においては、前記半導体装置と
筐体との隙間に熱伝導性弾性体を介挿し、上部筐体と下
部筐体とを嵌合圧着することにより、前記熱伝導性弾性
体を前記半導体装置と筐体間の隙間に圧縮装着すると共
に、前記配線基板を上部筐体及び下部筐体で挟持固定す
る工程を含み、前記熱伝導性弾性体は、常温において前
記電極接続用導電材料より柔らかく、かつ、常温より高
い温度域で加熱したときの圧縮荷重が常温での圧縮荷重
より小さいシート状熱伝導性弾性体からなり、前記配線
基板を筐体内に収納する工程の後工程として、前記配線
基板が収納された筐体を50〜100℃の温度環境下で
加熱保持する工程を付加したことにある。A feature of the method of manufacturing a semiconductor device that can achieve the object of the present invention is that a semiconductor device having a heating element is electrically connected and mounted on a wiring board via a conductive material for electrode connection. And a step of accommodating a wiring board on which the semiconductor device is mounted in a housing divided into an upper housing and a lower housing, the method comprising: In the step of housing the wiring board on which the is mounted in the housing, a heat conductive elastic body is inserted into a gap between the semiconductor device and the housing, and the upper housing and the lower housing are fitted and crimped. A step of compressing and mounting the heat conductive elastic body in a gap between the semiconductor device and the housing, and holding and fixing the wiring board between an upper housing and a lower housing, wherein the heat conductive elastic body includes Conductive for electrode connection at room temperature Softer than the material, and, when heated in a temperature range higher than room temperature, the compressive load is made of a sheet-like thermally conductive elastic body smaller than the compressive load at room temperature, and as a post-process of housing the wiring board in a housing And a step of heating and holding the housing accommodating the wiring board in a temperature environment of 50 to 100 ° C.
【0035】また、上記のように、この筐体を50〜1
00℃の温度環境下で加熱保持する工程を付加する代わ
りに、前記熱伝導性弾性体を前記半導体装置と筐体間の
隙間に圧縮装着すると共に、前記配線基板を上部筐体及
び下部筐体で挟持固定する工程の中で、筐体を50〜1
00℃の温度環境下で加熱保持するようにしてもよい。Also, as described above, this housing is 50 to 1
Instead of adding a step of heating and holding under a temperature environment of 00 ° C., the heat conductive elastic body is compression-mounted in a gap between the semiconductor device and the housing, and the wiring board is mounted on an upper housing and a lower housing. In the process of clamping and fixing with
The heating and holding may be performed in a temperature environment of 00 ° C.
【0036】[0036]
【発明の実施の形態】以下に、本発明の基本的な構成要
件となる熱伝導体に要求される特性、及びそれを用いた
本発明半導体装置及びその製造方法の基本原理につい
て、実験事実に基づき図面を用いて具体的に説明する。BEST MODE FOR CARRYING OUT THE INVENTION The characteristics required of a heat conductor, which is a basic component of the present invention, and the basic principles of a semiconductor device of the present invention and a method of manufacturing the same using the same will be described below. This will be specifically described with reference to the drawings.
【0037】図5は、熱伝導体となる高熱伝導性のシリ
コーン系ゴムシートの機械的特性を測定した実験方法を
示す。リジットな円筒冶具51a、51bの間に一定厚さのゴ
ムシート8を挟んで、圧縮速度0.01mm/sと言う一定の変
位速度で圧縮した。FIG. 5 shows an experimental method for measuring the mechanical properties of a silicone rubber sheet having a high thermal conductivity as a thermal conductor. The rubber sheet 8 having a constant thickness was sandwiched between the rigid cylindrical jigs 51a and 51b, and compressed at a constant displacement speed of 0.01 mm / s.
【0038】図6は、図5で示した実験から、ゴムシー
ト8の圧縮率(初期の厚さに対する潰し量の割合:横軸に
単位%で表示)と圧縮荷重(縦軸に単位kgfで表示)の
関係を室温(25℃)で計測した結果である。図中のA材
とB材はそれぞれ熱伝導率が異なる材料(ゴムシート
8)であり、熱伝導率が高いA材(5.6W/m・K)で
は同じ圧縮率に対する圧縮荷重が、熱伝導率が低いB材
(2.5W/m・K)より大きくなっており、圧縮率が
増加するほどその差が顕著(右上がりの特性)になって
いるのがわかる。FIG. 6 shows, from the experiment shown in FIG. 5, the compression ratio of the rubber sheet 8 (the ratio of the crushing amount to the initial thickness: expressed in units of% on the horizontal axis) and the compression load (units of kgf on the vertical axis). This is the result of measuring the relationship of (display) at room temperature (25 ° C.). Materials A and B in the figure are materials having different thermal conductivity (rubber sheet).
8), in the case of material A (5.6 W / m · K) having a high thermal conductivity, the compressive load for the same compressibility is larger than that of material B (2.5 W / m · K) having a low thermal conductivity. It can be seen that as the compression ratio increases, the difference becomes more pronounced (upward right characteristic).
【0039】図7は、図6の2種類のA、B材料につい
て,室温において圧縮率35%まで圧縮した状態で変位
保持したときの圧縮荷重の変化を測定した結果である。
同図の横軸は保持時間を秒単位(s)で示した。圧縮後に
変位保持すると初期に急速な応力緩和を生じ、ある時間
経過したところで圧縮荷重はほぼ一定になることがわか
る。FIG. 7 shows the results of measuring the change in the compression load when the two materials A and B shown in FIG. 6 were displaced and held at room temperature while being compressed to a compression ratio of 35%.
The abscissa in the figure indicates the retention time in seconds (s). It can be seen that when the displacement is maintained after compression, rapid stress relaxation occurs at an early stage, and the compression load becomes almost constant after a certain period of time.
【0040】図8は、図7中の熱伝導率の高いA材の場
合について同様な試験を80℃の炉中環境下で行った結
果である。80℃の環境下においては、シート材そのも
のの軟化によって同じ圧縮率に対する初期の圧縮荷重も
小さくなり,変位保持後の応力緩和が室温においては2
0〜30%程度で飽和してしまうのに対して、80℃で
は僅かな保持時間でほぼゼロ付近まで圧縮荷重が緩和し
てしまうことがわかる。FIG. 8 shows the results of a similar test performed on the material A having a high thermal conductivity in FIG. 7 in a furnace environment at 80 ° C. In an environment of 80 ° C., the initial compressive load for the same compressibility is reduced due to the softening of the sheet material itself, and the stress relaxation after the displacement holding is reduced by 2 at room temperature.
It can be seen that the saturation occurs at about 0 to 30%, whereas at 80 ° C., the compression load is reduced to almost zero with a short holding time.
【0041】以上の検討結果から、発熱素子を有する電
子部品(少なくとも半導体装置を含む)から、上記高熱
伝導性のゴムシート8を介して筐体(ここでは図面省
略)への放熱を実現する場合、通常の室温環境下での筐
体組立てではなく、他の半導体部品への影響も小さい低
温な加熱環境下で筐体組立てを行えば、ゴムシート8の
圧縮率を高く設計せざるを得ない場合においても筐体お
よび電子部品への負荷を格段に低くすることが可能であ
ることがわかる。From the results of the above study, it can be seen that heat is radiated from an electronic component having a heating element (including at least a semiconductor device) to a housing (not shown in the drawing) via the highly heat-conductive rubber sheet 8. If the housing assembly is performed not in a normal room temperature environment but in a low-temperature heating environment where the influence on other semiconductor components is small, the compression rate of the rubber sheet 8 must be designed to be high. In this case, it can be seen that the load on the housing and the electronic components can be significantly reduced.
【0042】図9、10は実際の製品モジュール筐体
(本発明では半導体装置と定義)を用いて、シート材8
を用いた放熱実装構造により筐体組立てを行った際に発
生する筐体への負荷を実験的に検討した結果である。同
図(a)は外観平面図、同図(b)は断面図である。FIGS. 9 and 10 show sheet materials 8 using an actual product module housing (defined as a semiconductor device in the present invention).
This is the result of experimentally examining the load on the housing that occurs when assembling the housing using the heat-dissipating mounting structure using the EMI. FIG. 1A is an external plan view, and FIG. 1B is a cross-sectional view.
【0043】評価に用いた筐体は、アルミニウム製の上
部筐体5及び下部筐体6の2体からなり、下部筐体6に上
部筐体5が嵌合する構造になっている。モジュール基板
3の四隅に設けられた据付穴3aをネジ9が貫通して上部筐
体5及び下部筐体6の四隅をネジ9で締め付けることによ
り、半導体モジュール100(正確にはモジュール基板3に
搭載された半導体パッケージ2)の背面に介挿された熱
伝導性ゴムシート8が圧縮された状態で装着される。な
お、モジュール基板3には、発熱素子(半導体チップ等の
素子)1を内装し、Cuキャップ7で封止られた半導体パッ
ケージ2が、ハンダバンプ4を介して搭載、接続されてい
る。The housing used for the evaluation is composed of an upper housing 5 and a lower housing 6 made of aluminum, and has a structure in which the upper housing 5 is fitted into the lower housing 6. Module board
The screw 9 penetrates the mounting holes 3a provided at the four corners of 3 and the four corners of the upper housing 5 and the lower housing 6 are tightened with the screws 9, so that the semiconductor module 100 (to be precise, mounted on the module substrate 3) The thermally conductive rubber sheet 8 inserted on the back of the semiconductor package 2) is mounted in a compressed state. Note that a heat generating element (element such as a semiconductor chip) 1 is mounted on the module substrate 3, and a semiconductor package 2 sealed with a Cu cap 7 is mounted and connected via a solder bump 4.
【0044】図9に示すように、発熱素子1を有する半
導体パッケージ2の搭載領域100aの中央部に相当する上
部筐体5の表面に、ひずみゲージ14を貼付し、筐体組立
て時のゲージ出力変化から間接的に筐体への負荷を測定
した。As shown in FIG. 9, a strain gauge 14 is attached to the surface of the upper housing 5 corresponding to the center of the mounting area 100a of the semiconductor package 2 having the heating element 1, and the gauge output at the time of assembling the housing. The load on the housing was measured indirectly from the change.
【0045】図10は、半導体パッケージ2の上面と筐
体間(正確には上部筐体5の内壁に設けられた半導体パ
ッケージ2の搭載領域100aに相当する浅い凹部溝6a)に
ゴムシート材8を介して圧縮装着した際の筐体表面のひ
ずみ出力変化を測定した結果である。なお、同図の左縦
軸は筐体の保持温度(℃)、右縦軸は筐体ひずみ(単
位:με)であり、横軸は保持時間(単位:分)をそれぞ
れ示している。FIG. 10 shows the rubber sheet material 8 between the upper surface of the semiconductor package 2 and the housing (more precisely, a shallow concave groove 6a corresponding to the mounting area 100a of the semiconductor package 2 provided on the inner wall of the upper housing 5). 5 shows a result of measuring a change in strain output on the surface of the housing when the housing is compressed and mounted via the. In the figure, the left vertical axis indicates the holding temperature (° C.) of the housing, the right vertical axis indicates the housing strain (unit: με), and the horizontal axis indicates the holding time (unit: minute).
【0046】室温環境においてネジ締結による筐体組立
てを行うことで、半導体パッケージ2上面と筐体間の隙
間に介挿されたゴムシート8が圧縮変形して、筐体表面
に引張りひずみが発生している。図示のように、保持時
間の初期にひずみはピークに達している。その後、筐体
温度の上昇とともに徐々に応力緩和が進行し、筐体表面
の温度が50℃を越えた付近で応力緩和が急速に生じて
いるのがわかる。When the housing is assembled by screwing in a room temperature environment, the rubber sheet 8 inserted in the gap between the upper surface of the semiconductor package 2 and the housing is compressed and deformed, and tensile strain is generated on the housing surface. ing. As shown, the strain reaches a peak early in the retention time. After that, the stress relaxation gradually progresses with the rise of the housing temperature, and it can be seen that the stress relaxation occurs rapidly near the temperature of the housing surface exceeding 50 ° C.
【0047】この測定結果から、図8に示したような加
熱環境下における応力緩和の増加は50℃を越えた付近
から顕著になることが予想される。しかし、図8の結果
と異なり応力緩和の進行が途中から止まってしまったの
は、図9に示したように筐体側のゴムシート搭載領域6a
が溝形状で形成されたものを流用したため、ゴムシート
8が筐体組立て後に筐体の溝の中に埋め込まれるような
形となり、ある程度以上潰れ変形が進行してしまうと、
シート材8自身の変形の逃げ場が失われ、静水圧に近い
境界条件となってしまったためと考えられる。したがっ
てシート材と接触する筐体側の形状はシート材周辺の変
形が拘束されないような構造にすることが重要である。
図10には、溝無しの予測値をプロットしたが、ほぼこ
れに近い実測値が得られた。From this measurement result, it is expected that the increase in stress relaxation under the heating environment as shown in FIG. However, unlike the result of FIG. 8, the progress of the stress relaxation stopped halfway, as shown in FIG.
Was used in the form of a groove.
8 becomes embedded in the groove of the housing after assembling the housing, and if crushing deformation progresses to a certain extent,
It is probable that the relief for the deformation of the sheet material 8 itself was lost, and the boundary conditions were close to the hydrostatic pressure. Therefore, it is important that the shape of the housing side that comes into contact with the sheet material has a structure in which deformation around the sheet material is not restricted.
In FIG. 10, the predicted value without the groove is plotted, but the measured value almost similar to this is obtained.
【0048】[0048]
【実施例】以下、図面にしたがって本発明の実施例を具
体的に説明する。 <実施例1>図1は、本発明の第1の実施例となる半導
体装置の概要を示す断面図である。図3及び図4は、そ
れぞれ高熱伝導性のゴムシート8の加熱処理タイミング
が異なる製造工程を示した断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the drawings. <First Embodiment> FIG. 1 is a sectional view showing an outline of a semiconductor device according to a first embodiment of the present invention. FIG. 3 and FIG. 4 are cross-sectional views showing manufacturing steps in which the heat treatment timing of the high thermal conductive rubber sheet 8 is different.
【0049】本実施例では、高速通信用モジュール構造
を例にして説明する。半導体素子として高速通信用の素
子1を搭載したBGA(Ball Grid Array)構造の半導
体パッケージ2は、モジュール基板3に、はんだバンプ
4(本発明では第2のはんだと称する)を介して実装さ
れ、筐体内に収納される半導体モジュール100を構成し
ている。なお、図中の発熱素子1は1チップの場合を示
しているが、複数のマルチチップパッケージ(MCM)
構造においても同様である。In this embodiment, a module structure for high-speed communication will be described as an example. A semiconductor package 2 having a BGA (Ball Grid Array) structure on which a high-speed communication element 1 is mounted as a semiconductor element is mounted on a module substrate 3 via solder bumps 4 (referred to as second solder in the present invention). The semiconductor module 100 accommodated in the housing is configured. Note that the heating element 1 in the drawing shows a case of one chip, but a plurality of multi-chip packages (MCM)
The same applies to the structure.
【0050】半導体モジュール100を収納する筐体は、
上部筐体5と下部筐体6との2体から構成され、下部筐
体6に上部筐体5が嵌合する構造になっている。これら
の筐体は放熱効果を高めるため、ここではアルミニウム
製を採用している。ただし、筐体材料については他のメ
タル材でもプラスチック材でもよい。ただし、プラスチ
ック材の場合は、例えばフィラーを充填し熱伝導性を高
めることが望ましい。The housing for housing the semiconductor module 100 is
It is composed of two members, an upper case 5 and a lower case 6, and has a structure in which the upper case 5 is fitted into the lower case 6. These housings are made of aluminum here in order to enhance the heat radiation effect. However, the housing material may be another metal material or a plastic material. However, in the case of a plastic material, it is desirable to enhance the thermal conductivity by, for example, filling a filler.
【0051】複数の半導体パッケージ2を搭載したモジ
ュール基板3は、その四隅に設けられた据付穴3aを通し
てネジ締結9により上下部筐体5、6内部に固定され
る。The module substrate 3 on which a plurality of semiconductor packages 2 are mounted is fixed inside the upper and lower casings 5 and 6 by screw fastening 9 through installation holes 3a provided at four corners thereof.
【0052】発熱素子1を搭載した半導体パッケージ2
のCuキャップ7上面と上部筐体5との間には、ネジ締結
後に高熱伝導性のゴムシート8の挿入分を考慮した隙間
が予め形成されている。Semiconductor package 2 on which heating element 1 is mounted
A gap is formed in advance between the upper surface of the Cu cap 7 and the upper housing 5 in consideration of the amount of insertion of the rubber sheet 8 having high thermal conductivity after screwing.
【0053】高熱伝導性のゴムシート8(工業用シリコ
ーンゴムシート)は、高熱伝導特性を実現するために、
この例では、銀系のフィラーを高充填することにより変
形能力の高さと高熱伝導性を両立した構成となってい
る。熱伝導率はフィラーの種類によって異なってくる
が、2〜6W /m・K程度の熱伝導率を有した材料であ
り、硬度は熱伝導率が高い程高くなる。The high thermal conductive rubber sheet 8 (industrial silicone rubber sheet) is used to realize high thermal conductive properties.
In this example, the configuration is such that high deformability and high thermal conductivity are achieved by highly filling a silver-based filler. Although the thermal conductivity varies depending on the type of the filler, it is a material having a thermal conductivity of about 2 to 6 W / m · K, and the hardness increases as the thermal conductivity increases.
【0054】上部筐体5の内壁面(突出部5a)と半導
体パッケージ2上面との隙間量t1(圧縮されたゴムシー
ト8の厚さに相当)は、筐体5、6の厚さ方向の寸法バ
ラツキを考慮した上で初期のゴムシート8の厚さt2より
小さくなるように設計されており、通常30%以上の圧
縮率を見積もった設計が必要である。この例では、好ま
しい圧縮率t1は、t2の40〜70%となるように設計さ
れている。The clearance t1 (corresponding to the thickness of the compressed rubber sheet 8) between the inner wall surface (projection 5a) of the upper housing 5 and the upper surface of the semiconductor package 2 is determined in the thickness direction of the housings 5 and 6. It is designed to be smaller than the initial thickness t2 of the rubber sheet 8 in consideration of the dimensional variation, and usually needs to be designed with an estimated compression ratio of 30% or more. In this example, the preferable compression ratio t1 is designed to be 40 to 70% of t2.
【0055】なお、モジュール基板3に搭載される半導
体パッケージ2は、この例では特に放熱特性を考慮した
実施例であるため、発熱素子1の上面にCuキャップ7を
取り付けた構造であるが、他の材質からなるキャップ材
であっても、樹脂で素子がモールドされた構造でも、直
接素子がむき出しとなっているベアチップ構造であって
も構わない。The semiconductor package 2 mounted on the module substrate 3 has a structure in which a Cu cap 7 is attached to the upper surface of the heating element 1 since this example is an embodiment particularly considering heat radiation characteristics. It may be a cap material made of the above material, a structure in which the element is molded with resin, or a bare chip structure in which the element is directly exposed.
【0056】Cuキャップ7上面にはゴムシート8が装着
され、筐体5、6をネジ9で締結する際に、図3で示す
ように、室温より高い温度、好ましくは50℃以上10
0℃以下の温度に設定された環境下で加熱しながら、筐
体5、6をネジ9で締結によりゴムシート8の圧縮装着を
行った。A rubber sheet 8 is mounted on the upper surface of the Cu cap 7, and when the casings 5 and 6 are fastened with the screws 9, as shown in FIG.
While heating in an environment set at a temperature of 0 ° C. or lower, the rubber sheets 8 were compression-mounted by fastening the casings 5 and 6 with screws 9.
【0057】また、図4で示すように室温環境下でゴム
シート8の圧縮装着を行った直後に、それを加熱炉に移
し50℃以上100℃以下の温度に加熱保持した。Immediately after the compression mounting of the rubber sheet 8 in a room temperature environment as shown in FIG. 4, it was transferred to a heating furnace and heated and maintained at a temperature of 50 ° C. or more and 100 ° C. or less.
【0058】この加熱保持工程においては、上記加熱温
度環境下で少なくとも10分以上、通常は15〜20分
間加熱保持すればよく、いずれの場合も筐体に収納され
た信頼性の高い半導体装置を得ることができた。In this heating and holding step, the heating and holding may be performed under the above-mentioned heating temperature environment for at least 10 minutes, usually 15 to 20 minutes. I got it.
【0059】なお、筐体内に収納する電子部品が、通信
系のモジュールでは、接着材を用いて光学部品の精密位
置決め固定を行っている場合が多いため、100℃以上
の加熱環境下では、光学機構の耐熱温度を越えてしまう
ことから、先に示した図10の測定結果から得られた知
見と併せ、好ましい加熱処理温度である50℃以上10
0℃以下の加熱環境下で実施することが、モジュール製
品全体としての信頼性に影響を与えることなく、高い圧
縮率を前提としたゴムシートによる放熱構造において、
より低負荷な実装構造を実現することができる。 <実施例2>図2は、本発明の第2の実施例を示す断面
図である。発熱素子1を有する電子部品から筐体への放
熱パスを考えた場合、素子上面に取り付けたCuキャップ
4の素子搭載領域以外の領域からゴムシート8を介して
筐体側に熱伝導される効果は非常に小さく、素子搭載領
域でのCuキャップ4を介した放熱パスがほとんどを占
めている。In electronic modules housed in a housing, in a communication system module, an optical component is often precisely positioned and fixed using an adhesive. Since the temperature exceeds the heat resistance temperature of the mechanism, the heat treatment temperature of 50 ° C.
In a heat dissipation structure using a rubber sheet assuming a high compression ratio without affecting the reliability of the module product as a whole under the heating environment of 0 ° C or less,
A mounting structure with a lower load can be realized. <Embodiment 2> FIG. 2 is a sectional view showing a second embodiment of the present invention. When a heat radiation path from the electronic component having the heating element 1 to the housing is considered, the effect of heat conduction from the region other than the device mounting region of the Cu cap 4 attached to the upper surface of the device to the housing via the rubber sheet 8 is as follows. It is very small, and the heat dissipation path via the Cu cap 4 in the element mounting area occupies most.
【0060】そのため、この実施例においてはゴムシー
ト材8の搭載領域をCuキャップ4全面ではなく、その
内部の発熱素子1の領域に限定したサイズでシート材8
を搭載する。これにより放熱特性への影響を最小限に抑
えながら、同じ圧縮率に対する筐体5、6および電子部
品やモジュール基板3への負荷は大幅に軽減される。For this reason, in this embodiment, the mounting area of the rubber sheet material 8 is not limited to the entire surface of the Cu cap 4 but is limited to the area of the heating element 1 inside the Cu cap 4.
With. This greatly reduces the load on the housings 5 and 6 and the electronic components and the module substrate 3 for the same compression ratio while minimizing the influence on the heat radiation characteristics.
【0061】さらに第1の実施例と同様に50℃以上1
00℃以下の環境下に加熱保持しながら筐体5、6のネ
ジ9締結による組立てを行った。また、第1の実施例と
同様に、予め室温環境下で筐体組立てを行った直後に5
0℃以上100℃以下の環境下で加熱保持する方法も実
施した。Further, as in the case of the first embodiment, a temperature of 50 ° C.
The housings 5 and 6 were assembled by fastening the screws 9 while being heated and held under an environment of 00 ° C. or less. Also, as in the first embodiment, immediately after assembling the housing in a room temperature environment in advance, 5
A method of heating and holding in an environment of 0 ° C. or more and 100 ° C. or less was also performed.
【0062】前者の加熱保持しながら筐体のネジ締結を
行う場合には、筐体組立て時の初期の発生負荷を、後者
の場合よりも低く抑えることができるので、より短時間
での応力緩和が達成され、製造プロセスの短TAT(Tu
rn Around Time)化が図れる。 <実施例3>図11は、光通信用光学部品を搭載した高
速通信用モジュール構造を含む実施例である。同図(a)
は、本発明に係る半導体装置の外観を示した平面図であ
り、同図(b)はその断面図である。When the screws are fastened to the housing while holding the former by heating, the initial load generated at the time of assembling the housing can be suppressed lower than in the latter case, so that the stress can be alleviated in a shorter time. Has been achieved and the short TAT (Tu
rn Around Time). <Embodiment 3> FIG. 11 shows an embodiment including a high-speed communication module structure equipped with optical communication optical components. Figure (a)
1 is a plan view showing the appearance of a semiconductor device according to the present invention, and FIG. 1 (b) is a sectional view thereof.
【0063】装置の基本構成は第1の実施例と同様であ
るが、光通信用モジュールでは電気/光変換を行うため
のレーザダイオードを内蔵したレーザダイオードモジュ
ール(光素子)11が上部筐体5もしくは下部筐体6の裏
面に固定して設置されている。この実施例では、光素子1
1を下部筐体6の裏面に設けた場合を示している。The basic structure of the apparatus is the same as that of the first embodiment. However, in the optical communication module, a laser diode module (optical element) 11 having a built-in laser diode for performing electric / optical conversion is provided in the upper casing 5. Alternatively, it is fixedly installed on the back surface of the lower housing 6. In this embodiment, the optical element 1
1 shows a case where 1 is provided on the back surface of the lower housing 6.
【0064】この種の半導体装置においては、発熱量が
大きいため一般に高放熱な筐体のフィン側裏面に直付け
される場合が多い。レーザダイオードモジュール11は電
気信号を光信号に変換・出力するための発光素子を含む
が、一般には光信号を電気信号に変換する受光素子をも
含んでいる。In this type of semiconductor device, since the amount of heat generated is large, it is generally often mounted directly on the fin-side back surface of a high heat dissipation housing. The laser diode module 11 includes a light emitting element for converting and outputting an electric signal to an optical signal, but generally also includes a light receiving element for converting an optical signal to an electric signal.
【0065】発光素子の場合には、出力された光信号を
光ファイバ12に高効率に集光するため高精度な位置決め
が実施されているが、受光素子の場合も機能が逆なだけ
で高精度な位置決めが要求されるのは発光素子と同じで
ある。In the case of a light emitting element, high-precision positioning is performed in order to converge an output optical signal on the optical fiber 12 with high efficiency. Accurate positioning is required in the same manner as the light emitting element.
【0066】発光素子の場合には、電気信号を光信号に
変換することで、また受光素子の場合には、光信号を電
気信号に変換することで、いずれの場合にも低ノイズ・
高速な信号伝送を可能にする。In the case of a light emitting element, an electric signal is converted into an optical signal, and in the case of a light receiving element, an optical signal is converted into an electric signal.
Enables high-speed signal transmission.
【0067】この際、発熱素子1を有する半導体パッケ
ージ2のゴムシート8を介した筐体5、6への放熱構造
を実施するために筐体へ高い負荷を与えて筐体自身を変
形させてしまうと、レーザダイオードモジュール11と光
ファイバ12の相対位置がずれてしまい、レーザダイオー
ドから発光された光信号の光ファイバ12への集光効率が
著しく悪化し製品性能を劣化させる。At this time, in order to implement a heat radiation structure to the housings 5 and 6 via the rubber sheet 8 of the semiconductor package 2 having the heating element 1, a high load is applied to the housing to deform the housing itself. If this occurs, the relative positions of the laser diode module 11 and the optical fiber 12 will be shifted, and the efficiency of condensing the optical signal emitted from the laser diode on the optical fiber 12 will be significantly deteriorated, degrading the product performance.
【0068】したがって、第1の実施例で示した方法に
より筐体に対して低負荷にゴムシート8を装着し、半導
体パッケージ2の高放熱構造を達成することが、光通信
用の高速伝送モジュールでは必須な要件である。Accordingly, the high heat dissipation structure of the semiconductor package 2 can be achieved by attaching the rubber sheet 8 to the housing with a low load by the method shown in the first embodiment and achieving a high heat radiation structure of the semiconductor package 2. Is an essential requirement.
【0069】本発明によれば、ゴムシート8が、40〜7
0%に圧縮装着されても加熱保持されることで筐体に対
しては低負荷となり、放熱効果を発揮しつつ筐体変形を
抑えることができるため、上記のようにレーザダイオー
ドから発光された光信号の光ファイバ12への集光効率の
低下を防止でき信頼性の高い装置が実現できる。According to the present invention, the rubber sheet 8
Even if it is compressed and mounted at 0%, it is heated and held, so that the load on the housing is reduced, and it is possible to suppress the deformation of the housing while exhibiting the heat radiation effect. It is possible to prevent a reduction in the efficiency of condensing the optical signal on the optical fiber 12, thereby realizing a highly reliable device.
【0070】なお、図12には、図11で熱伝導性ゴム
シート8が圧縮装着されたとき筐体が受ける負荷(荷
重)の向きを模式的に示したものである。FIG. 12 schematically shows the direction of the load (load) applied to the housing when the thermally conductive rubber sheet 8 is compression-mounted in FIG.
【0071】図13は、図11の筐体内に収納した半導
体パッケージ2とレーザダイオードモジュール11とから
構成される光トランシーバLSIの回路構成例をブロッ
ク図で示したものである。FIG. 13 is a block diagram showing an example of a circuit configuration of an optical transceiver LSI including the semiconductor package 2 and the laser diode module 11 housed in the housing of FIG.
【0072】このブロック図の機能の概要を説明する
と、同図中の上段部が左端から入力した電気信号をMU
X回路(多重化回路)通して右端のLDモジュール(送
信部)に入力し、この入力した電気信号をLDモジュー
ルで光信号に変換して右端から不図示の光ファイバを通
して外部に光信号として出力するものである。The outline of the function of this block diagram will be described. The upper part in the figure shows an electric signal input from the left end in the MU.
The signal is input to the rightmost LD module (transmitting unit) through an X circuit (multiplexing circuit), the input electric signal is converted into an optical signal by the LD module, and output as an optical signal from the rightmost end through an optical fiber (not shown). Is what you do.
【0073】それに対して同図中の下段部が右端から不
図示の光ファイバを通して入力した光信号をPDモジュ
ール(受信部)で電気信号に変換すると共に増幅器を通
して左端のDEMUX回路(分離回路)に入力して外部
に電気出力するものである。On the other hand, the lower part in the figure converts the optical signal input from the right end through an optical fiber (not shown) into an electric signal by a PD module (reception unit), and at the same time through an amplifier to a DEMUX circuit (separation circuit) on the left end. Input and output to the outside.
【0074】即ち、この光トランシーバLSIブロック
の左側のMUX回路(多重化回路)及びDEMUX回路
(分離回路)が図11の半導体パッケージ2に該当し、
右側のLDモジュール及びPDモジュールが光素子11
(レーザダイオードモジュール)に該当する。That is, the MUX circuit (multiplexing circuit) and DEMUX circuit (separation circuit) on the left side of the optical transceiver LSI block correspond to the semiconductor package 2 in FIG.
The LD module and PD module on the right side
(Laser diode module).
【0075】なお、この装置では、例えば、622Mb
/sのデータをMUX回路(多重化回路)に入力した
時、LDモジュール(送信部)から光出力として10Gb
/sのデータが出力された。In this apparatus, for example, 622 Mb
/ S data is input to the MUX circuit (multiplexing circuit), the optical output from the LD module (transmission unit) is 10 Gb
/ S data was output.
【0076】図14(a)は、図11に示した半導体装置
(光トランシーバモジュール)の放熱構造について説明
する断面模式図である。図14(b)及び図14(c)
は、それぞれ半導体パッケージ2の部分拡大図であり、
図14(b)では発熱素子1(トランシーバLSI)と金
属キャップ7との隙間には熱伝導性樹脂(熱硬化性樹
脂)を充填し、半導体パッケージ基板21と発熱素子1との
BGAはんだバンプ4周囲の隙間には、熱伝導性良好な
アンダーフィル樹脂を充填している。FIG. 14A is a schematic cross-sectional view illustrating the heat radiation structure of the semiconductor device (optical transceiver module) shown in FIG. FIG. 14 (b) and FIG. 14 (c)
Are partial enlarged views of the semiconductor package 2, respectively.
In FIG. 14B, the gap between the heating element 1 (transceiver LSI) and the metal cap 7 is filled with a heat conductive resin (thermosetting resin), and the BGA solder bumps 4 between the semiconductor package substrate 21 and the heating element 1 are formed. The surrounding gap is filled with an underfill resin having good thermal conductivity.
【0077】図14(c)の場合にはBGAはんだバン
プ4の代わりに金バンプを、アンダーフィル樹脂の代わ
りに異方導電樹脂(非導電樹脂)を充填して、いずれも
半導体パッケージ2のキャップ7から上部筐体5側に放
熱するだけでなく、モジュール基板3側からも下部筐体
側にも放熱するように配慮している。 <実施例4>図15は、光通信用光学部品を搭載した高
速通信用モジュール構造を含む他の実施例の断面図であ
るである。この例は、実施例3の図11に示した構造と
基本的には同じであるが、放熱フィン10が下部筐体6側
に設けられている点が異なる。すなわち、放熱フィン10
をレーザダイオード11が設置される側の下部筐体6に設
けることにより、発熱量の多いレーザダイオード11の放
熱効果を高めている。 <実施例5>図16は、図15に示した実施例4よりも
放熱効果をさらに高めた光通信用光学部品を搭載した高
速通信用モジュール構造を含む他の実施例の断面図であ
るである。この例では、レーザダイオード11の熱を更に
上部筐体5側にも放熱するように、半導体パッケージ2と
同様に熱伝導性ゴムシート8をレーザダイオード11と上
部筐体5との隙間にも圧縮装着した。これにより、発熱
量の多いレーザダイオード11が上部、下部の両筐体5、6
から放熱され、放熱効果を一層高めている。 <実施例6>図17(a)は、光通信用光学部品を搭載
した高速通信用モジュール構造を含む他の実施例の断面
図であるである。基本的には、図11に示した実施例4
と同一構造であるが、半導体パッケージ2の代わりに発
熱素子1としてベアチップを用いてモジュール基板3に、
はんだバンプ4を介して直接接続し、かつ、はんだバン
プ4の周囲にアンダーフィル樹脂を充填した点が異な
る。これによりベアチップ1からの熱を上部、下部の両筐
体5、6から効果的に放熱できるようにしたものである。
図17(b)は、図17(a)に示した装置のフリップチ
ップの放熱経路を模式的に示した部分拡大図である。In the case of FIG. 14C, gold bumps are filled in place of the BGA solder bumps 4 and anisotropic conductive resin (non-conductive resin) is filled in place of the underfill resin. Consideration is given not only to the heat dissipation from 7 to the upper housing 5 side, but also to the module board 3 side and the lower housing side. <Embodiment 4> FIG. 15 is a sectional view of another embodiment including a module structure for high-speed communication on which optical components for optical communication are mounted. This example is basically the same as the structure shown in FIG. 11 of the third embodiment, except that the radiation fin 10 is provided on the lower housing 6 side. That is, the radiation fin 10
Is provided in the lower housing 6 on the side where the laser diode 11 is installed, so that the heat radiation effect of the laser diode 11 that generates a large amount of heat is enhanced. <Embodiment 5> FIG. 16 is a cross-sectional view of another embodiment including a high-speed communication module structure equipped with an optical communication optical component having a higher heat radiation effect than Embodiment 4 shown in FIG. is there. In this example, the heat conductive rubber sheet 8 is compressed into the gap between the laser diode 11 and the upper housing 5 in the same manner as the semiconductor package 2 so that the heat of the laser diode 11 is further radiated to the upper housing 5 side. I attached it. As a result, the laser diode 11, which generates a large amount of heat, is connected to both the upper and lower housings 5, 6.
The heat is dissipated from the radiator, further enhancing the heat dissipation effect. <Embodiment 6> FIG. 17A is a cross-sectional view of another embodiment including a high-speed communication module structure equipped with optical communication optical components. Basically, the fourth embodiment shown in FIG.
Has the same structure as that of the semiconductor package 2, but uses a bare chip as the heating element 1 in place of the semiconductor package 2 on the module substrate 3,
The difference is that they are directly connected via the solder bumps 4 and the underfill resin is filled around the solder bumps 4. Thus, heat from the bare chip 1 can be effectively radiated from the upper and lower housings 5 and 6.
FIG. 17B is a partially enlarged view schematically showing a heat dissipation path of the flip chip of the device shown in FIG. 17A.
【0078】図17(c)は、比較例として示した従来
のワイヤーボンディングの場合の放熱経路である。 <実施例7>図18は、光通信用光学部品を搭載した高
速通信用モジュール構造を含む他の実施例の断面図であ
るである。基本的には、図17(a)に示した実施例6と
同一構造であるが、本実施例では発熱素子1を、高さの
異なる複数のベアチップをモジュール基板2に混載した
マルチチップで構成した点が異なる。この種の高さに高
低差がある複数の発熱素子1をモジュール基板2に搭載す
る場合には、本発明の低負荷放熱方式が極めて有効であ
る。FIG. 17C shows a heat radiation path in the case of the conventional wire bonding shown as a comparative example. <Embodiment 7> FIG. 18 is a sectional view of another embodiment including a high-speed communication module structure equipped with optical communication optical components. Basically, the structure is the same as that of the sixth embodiment shown in FIG. 17 (a). However, in this embodiment, the heating element 1 is composed of a multi-chip in which a plurality of bare chips having different heights are mixed on a module substrate 2. Is different. When a plurality of heating elements 1 having such height differences in height are mounted on the module substrate 2, the low-load heat radiation method of the present invention is extremely effective.
【0079】[0079]
【発明の効果】以上詳述したように、本発明により高効
率放熱かつ低コストで信頼性の高い放熱実装構造を有す
る半導体装置を実現すると言う所期の目的を達成するこ
とができた。As described in detail above, the intended object of realizing a semiconductor device having a highly efficient heat dissipation, low cost, and highly reliable heat dissipation mounting structure can be achieved by the present invention.
【図1】本発明の第1の実施例を示す半導体装置の断面
図。FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention.
【図2】本発明の第2の実施例を示す半導体装置の断面
図。FIG. 2 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention.
【図3】本発明の製造方法の一例を示す断面工程図。FIG. 3 is a sectional process view showing an example of the manufacturing method of the present invention.
【図4】本発明の製造方法の他の一例を示す断面工程
図。FIG. 4 is a sectional process view showing another example of the manufacturing method of the present invention.
【図5】本発明の原理を説明するゴムシートの機械的特
性を計測するための実験方法を示す断面図。FIG. 5 is a cross-sectional view showing an experimental method for measuring mechanical properties of a rubber sheet for explaining the principle of the present invention.
【図6】ゴムシートの圧縮率と圧縮荷重の関係を示す特
性図。FIG. 6 is a characteristic diagram showing a relationship between a compression ratio and a compression load of a rubber sheet.
【図7】室温におけるゴムシートの応力緩和特性図。FIG. 7 is a graph showing stress relaxation characteristics of a rubber sheet at room temperature.
【図8】本発明の原理を説明する85℃におけるゴムシ
ートの応力緩和特性図。FIG. 8 is a graph showing stress relaxation characteristics of a rubber sheet at 85 ° C. for explaining the principle of the present invention.
【図9】本発明の原理を説明するゴムシート装着時の筐
体負荷測定方法を示す断面図と平面図。FIGS. 9A and 9B are a cross-sectional view and a plan view illustrating a method of measuring a housing load when a rubber sheet is attached, illustrating the principle of the present invention.
【図10】本発明の原理を説明するゴムシート装着時の
筐体負荷測定結果を示した特性図。FIG. 10 is a characteristic diagram showing a measurement result of a housing load when a rubber sheet is attached, explaining the principle of the present invention.
【図11】本発明の第3の実施例を示す半導体装置の平
面図及び断面図。FIG. 11 is a plan view and a cross-sectional view of a semiconductor device according to a third embodiment of the present invention.
【図12】本発明の第3の実施例の中でゴムシートが圧
縮装着された時、筐体が受ける負荷の向きを模式的に示
した半導体装置の断面図。FIG. 12 is a cross-sectional view of a semiconductor device schematically illustrating a direction of a load applied to a housing when a rubber sheet is compression-mounted in a third embodiment of the present invention.
【図13】本発明の第3の実施例の中で筐体内に収納し
た半導体パッケージとレーザダイオードモジュールとか
ら構成される光トランシーバLSIの回路構成ブロック
図。FIG. 13 is a circuit block diagram of an optical transceiver LSI including a semiconductor package and a laser diode module housed in a housing in a third embodiment of the present invention.
【図14】本発明の第3の実施例として示した半導体装
置の放熱構造を説明する断面図。FIG. 14 is a cross-sectional view illustrating a heat dissipation structure of a semiconductor device shown as a third embodiment of the present invention.
【図15】本発明の第4の実施例を示す半導体装置の断
面図。FIG. 15 is a sectional view of a semiconductor device according to a fourth embodiment of the present invention.
【図16】本発明の第5の実施例を示す半導体装置の断
面図。FIG. 16 is a sectional view of a semiconductor device according to a fifth embodiment of the present invention.
【図17】本発明の第6の実施例を示す半導体装置の断
面図。FIG. 17 is a sectional view of a semiconductor device according to a sixth embodiment of the present invention.
【図18】本発明の第7の実施例を示す半導体装置の断
面図。FIG. 18 is a sectional view of a semiconductor device according to a seventh embodiment of the present invention.
1…発熱素子、 2…半導体パッケージ、 3…モジュール基板、 3a…モジュール基板の据付穴、 4…:はんだバンプ 5…上部筐体、 5a…上部筐体の突出部、 6…下部筐体、 6a…下部筐体の突出部、 7…金属キャップ(Cuキャップ)、 8…熱伝導性ゴムシート、 9…ネジ(締結部)、 10…放熱フィン、 11…レーザダイオードモジュール、 12…光ファイバ、 14…ひずみゲージ、 21…半導体パッケージ基板、 100…半導体モジュール、 DESCRIPTION OF SYMBOLS 1 ... Heating element, 2 ... Semiconductor package, 3 ... Module board, 3a ... Installation hole of module board, 4 ... Solder bump 5 ... Upper housing, 5a ... Projection part of upper housing, 6 ... Lower housing, 6a ... projecting part of the lower housing, 7: metal cap (Cu cap), 8: heat conductive rubber sheet, 9: screw (fastening part), 10: heat radiation fin, 11: laser diode module, 12: optical fiber, 14 ... Strain gauge, 21 ... Semiconductor package board, 100 ... Semiconductor module,
───────────────────────────────────────────────────── フロントページの続き (72)発明者 菊地 宏 東京都青梅市新町六丁目16番地の3 株式 会社日立製作所デバイス開発センタ内 (72)発明者 野瀬 藤明 東京都青梅市新町六丁目16番地の3 株式 会社日立製作所デバイス開発センタ内 (72)発明者 久保 貴 茨城県土浦市神立町502番地 株式会社日 立製作所機械研究所内 (72)発明者 青木 哲哉 神奈川県横浜市戸塚区戸塚町216番地 株 式会社日立製作所通信事業部内 (72)発明者 吉本 賢治 神奈川県横浜市戸塚区戸塚町216番地 株 式会社日立製作所通信事業部内 Fターム(参考) 5F036 AA01 BA23 BB21 BC03 5F041 AA33 DA12 DA19 EE08 5F073 AB28 BA01 EA29 FA25 FA30 5F088 BA11 BB01 JA03 JA14 JA20 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hiroshi Kikuchi 6-16-16 Shinmachi, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. (72) Inventor Tomoaki Nose 6-16 Shinmachi, Ome-shi, Tokyo (3) Inside the Device Development Center, Hitachi, Ltd. (72) Inventor Takashi Kubo 502, Kunitachi-cho, Tsuchiura-shi, Ibaraki Pref. Inside Machinery Research Laboratories, Ltd. Hitachi, Ltd. Communications Division (72) Inventor Kenji Yoshimoto 216 Totsuka-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture F-term in the Communications Division, Hitachi, Ltd. 5F036 AA01 BA23 BB21 BC03 5F041 AA33 DA12 DA19 EE08 5F073 AB28 BA01 EA29 FA25 FA30 5F088 BA11 BB01 JA03 JA14 JA20
Claims (17)
接続、搭載された半導体装置と、 前記配線基板と前記半導体装置とを収納する筐体と、 前記半導体装置と筐体との隙間に配置され、前記半導体
装置の熱を筐体に伝導する熱伝導体とを備えた半導体装
置であって、 前記筐体は、互いに開口部を有する上部筐体と下部筐体
とに分割され、かつ、一方の開口部が他方の開口部に勘
合する構造を有すると共に、前記筐体の周縁部には、前
記配線基板上に搭載された半導体装置と熱伝導体とを筐
体内に収納保持する嵌合圧着手段を有し、 前記熱伝導体は、常温において前記電極接続用導電材料
より柔らかく、かつ、常温より高い温度域で加熱したと
きの圧縮荷重が常温での圧縮荷重より小さい熱伝導性弾
性体からなり、前記半導体装置と筐体との隙間に前記温
度域で加熱され圧縮装着されていることを特徴とする半
導体装置。A semiconductor device electrically connected to and mounted on the wiring substrate via an electrode connecting conductive material; a housing for housing the wiring substrate and the semiconductor device; A semiconductor device provided with a heat conductor that is disposed in a gap between a semiconductor device and a housing and conducts heat of the semiconductor device to the housing, wherein the housing has an upper housing having openings with each other. A semiconductor device mounted on the wiring board and having a structure in which one opening is fitted into the other opening, and a semiconductor device mounted on the wiring board is provided at a peripheral edge of the housing. The heat conductor is softer than the conductive material for electrode connection at room temperature, and the compression load when heated in a temperature range higher than room temperature is at room temperature. Made of a thermally conductive elastic material smaller than the compressive load of A semiconductor device characterized by being heated and compressed mounted at the temperature range in the gap between the semiconductor device and the housing.
接続、搭載された半導体装置と、 前記配線基板と前記半導体装置とを収納する筐体と、 前記半導体装置と筐体との隙間に配置され、前記半導体
装置の熱を筐体に伝導する熱伝導体とを備えた半導体装
置であって、 前記筐体は、互いに開口部を有する上部筐体と下部筐体
とに分割され、かつ、一方の開口部が他方の開口部に勘
合する構造を有すると共に、前記筐体の周縁部には、前
記配線基板上に搭載された半導体装置と熱伝導体とを筐
体内に収納保持する嵌合圧着手段を有し、前記筐体内壁
には、前記配線基板上の半導体装置に電気的に接続され
た電極端子と、光ファイバーに接続された光学端子とを
有する光素子を保持し、 前記熱伝導体は、常温において前記電極接続用導電材料
より柔らかく、かつ、常温より高い温度域で加熱したと
きの圧縮荷重が常温での圧縮荷重より小さい熱伝導性弾
性体からなり、前記半導体装置と筐体との隙間に前記温
度域で加熱され圧縮装着されていることを特徴とする半
導体装置。2. A wiring board, a semiconductor device electrically connected and mounted on the wiring board via a conductive material for electrode connection, a housing for housing the wiring board and the semiconductor device, A semiconductor device provided with a heat conductor that is disposed in a gap between a semiconductor device and a housing and conducts heat of the semiconductor device to the housing, wherein the housing has an upper housing having openings with each other. A semiconductor device mounted on the wiring board and having a structure in which one opening is fitted into the other opening, and a semiconductor device mounted on the wiring board is provided at a peripheral edge of the housing. And a fitting / compression means for housing and holding the inside of the housing, and the housing inner wall includes an electrode terminal electrically connected to the semiconductor device on the wiring board, and an optical terminal connected to the optical fiber. Holding the optical element, wherein the thermal conductor is at room temperature Softer than the conductive material for electrode connection, and, when heated in a temperature range higher than room temperature, a compressive load is made of a thermally conductive elastic body smaller than a compressive load at room temperature, and the gap between the semiconductor device and the housing is A semiconductor device, which is heated in a temperature range and mounted under compression.
接続、搭載された半導体パッケージと、 前記モジュール基板と前記半導体パッケージとを収納す
る筐体と、 前記半導体パッケージと筐体との隙間に配置され、前記
半導体パッケージの熱を筐体に伝導する熱伝導体とを備
えた半導体装置であって、 前記筐体は、互いに開口部を有する上部筐体と下部筐体
とに分割され、かつ、一方の開口部が他方の開口部に勘
合する構造を有すると共に、前記筐体の周縁部には、前
記モジュール基板上に搭載された半導体パッケージと熱
伝導体とを筐体内に収納保持する嵌合圧着手段を有し、
前記半導体パッケージには、パッケージ基板に半導体素
子が第2のハンダを介して電気的に接続、搭載され、 前記熱伝導体は、常温において前記第1、第2いずれの
はんだより柔らかく、かつ、常温より高くはんだリフロ
ー温度よりも低い温度域で加熱したときの圧縮荷重が常
温での圧縮荷重より小さい弾性体からなり、前記半導体
パッケージと筐体との隙間に前記温度域で加熱され圧縮
装着されていることを特徴とする半導体装置。A semiconductor package electrically connected to and mounted on the module substrate via a first solder; a housing accommodating the module substrate and the semiconductor package; a semiconductor; A semiconductor device comprising a heat conductor disposed in a gap between a package and a case and conducting heat of the semiconductor package to the case, wherein the case has an upper case and a lower portion having openings. And the housing has a structure in which one opening fits into the other opening, and a peripheral portion of the housing has a semiconductor package and a heat conductor mounted on the module substrate. Having a fitting crimping means for storing and holding the
In the semiconductor package, a semiconductor element is electrically connected to and mounted on a package substrate via a second solder. The heat conductor is softer at room temperature than the first and second solders and at room temperature. A compressive load when heated in a temperature range lower than a higher solder reflow temperature is made of an elastic body smaller than a compressive load at room temperature, and is heated and compressed in a gap between the semiconductor package and the housing in the temperature range. A semiconductor device.
接続、搭載された半導体パッケージと、 前記モジュール基板と前記半導体パッケージとを収納す
る筐体と、 前記半導体パッケージと筐体との隙間に配置され、前記
半導体パッケージの熱を筐体に伝導する熱伝導体とを備
えた半導体装置であって、 前記筐体は、互いに開口部を有する上部筐体と下部筐体
とに分割され、かつ、一方の開口部が他方の開口部に勘
合する構造を有すると共に、前記筐体の周縁部には、前
記モジュール基板上に搭載された半導体パッケージと熱
伝導体とを筐体内に収納保持する嵌合圧着手段を有し、
前記半導体パッケージには、パッケージ基板に半導体素
子が第2のはんだを介して電気的に接続、搭載され、 前記筐体内壁には、前記モジュール基板上の半導体パッ
ケージ電極に電気的に接続された電極端子と、光ファイ
バーに接続された光学端子とを有する光素子を保持し、 前記熱伝導体は、常温において前記第1、第2いずれの
はんだより柔らかく、かつ、常温より高くハンダ・リフ
ロー温度よりも低い温度域で加熱したときの圧縮荷重が
常温での圧縮荷重より小さい弾性体からなり、前記半導
体パッケージと筐体との隙間に前記温度域で加熱され圧
縮装着されていることを特徴とする半導体装置。4. A module substrate, a semiconductor package electrically connected and mounted on the module substrate via a first solder, a housing for accommodating the module substrate and the semiconductor package, and the semiconductor A semiconductor device comprising a heat conductor disposed in a gap between a package and a case and conducting heat of the semiconductor package to the case, wherein the case has an upper case and a lower portion having openings. And a housing having a structure in which one opening fits into the other opening, and a peripheral portion of the housing includes a semiconductor package and a heat conductor mounted on the module substrate. Having a fitting and crimping means for storing and holding the
In the semiconductor package, a semiconductor element is electrically connected to and mounted on a package substrate via a second solder, and on the inner wall of the housing, an electrode electrically connected to a semiconductor package electrode on the module substrate Holding an optical element having a terminal and an optical terminal connected to an optical fiber, wherein the heat conductor is softer than the first or second solder at room temperature, and higher than room temperature and higher than a solder reflow temperature. A semiconductor characterized in that a compressive load when heated in a low temperature range is made of an elastic body that is smaller than a compressive load at normal temperature, and is heated and compressed in a gap between the semiconductor package and the housing in the temperature range. apparatus.
接続、搭載された複数の半導体装置と、 前記配線基板と前記複数の半導体装置とを収納する筐体
と、 前記複数の半導体装置と筐体との隙間に一括配置され、
前記複数の半導体装置の熱を筐体に伝導する熱伝導体と
を備えた半導体装置であって、 前記筐体は、互いに開口部を有する上部筐体と下部筐体
とに分割され、かつ、一方の開口部が他方の開口部に勘
合する構造を有すると共に、前記筐体の周縁部には、前
記配線基板上に搭載された複数の半導体装置と熱伝導体
とを筐体内に収納保持する嵌合圧着手段を有し、 前記熱伝導体は、常温において前記電極接続用導電材料
より柔らかく、かつ、常温より高い温度域で加熱したと
きの圧縮荷重が常温での圧縮荷重より小さい熱伝導性弾
性体からなり、前記複数の半導体装置と筐体との隙間に
前記温度域で加熱され圧縮装着されていることを特徴と
する半導体装置。5. A wiring board, a plurality of semiconductor devices electrically connected and mounted on the wiring substrate via an electrode-connecting conductive material, and a housing for accommodating the wiring substrate and the plurality of semiconductor devices. A body, and are collectively arranged in a gap between the plurality of semiconductor devices and the housing;
A semiconductor device comprising: a heat conductor that conducts heat of the plurality of semiconductor devices to a housing; wherein the housing is divided into an upper housing and a lower housing having an opening, and One opening has a structure that fits into the other opening, and a plurality of semiconductor devices mounted on the wiring board and a heat conductor are housed and held in the housing at the periphery of the housing. The heat conductor is softer than the conductive material for electrode connection at room temperature, and has a heat conductivity smaller than a compression load at room temperature when heated in a temperature range higher than room temperature. A semiconductor device comprising an elastic body, which is heated and compressed in a gap between the plurality of semiconductor devices and a housing in the temperature range.
W/m・Kであって、室温での弾性率が、0.5〜5.0Paで
あり、常温より高い温度域で加熱したときの圧縮荷重が
常温での圧縮荷重より小さい熱伝導性弾性体からなり、
前記半導体装置と筐体との隙間に、前記温度域で加熱さ
れ圧縮装着されていることを特徴とする請求項1乃至5
の何れか一つに記載の半導体装置。6. The thermal conductor has a thermal conductivity of 1.0 to 7.0.
It is composed of a thermally conductive elastic material having a W / m · K, an elastic modulus at room temperature of 0.5 to 5.0 Pa, and a compressive load when heated in a temperature range higher than room temperature is smaller than a compressive load at room temperature. ,
6. The semiconductor device according to claim 1, wherein the semiconductor device is heated and compressed in the temperature range in a gap between the semiconductor device and the housing.
The semiconductor device according to any one of the above.
たりに必要な荷重で表わしたとき、30℃での変形抵抗
に対して、100℃での変形抵抗が1/3〜1/2であ
るゴム質材からなる熱伝導体からなることを特徴とする
請求項1乃至5の何れか一つに記載の半導体装置。7. When the deformation resistance is expressed by a load required per unit compressibility, the deformation resistance at 100 ° C. is 1/3 to 1/1/30 ° C. 6. The semiconductor device according to claim 1, wherein the semiconductor device is made of a heat conductor made of a rubber material.
前記半導体パッケージに接触する第一の部位の厚さをt
1、その周囲の前記半導体装置もしくは前記半導体パッ
ケージに接触しない第二の部位の厚さをt2としたと
き、厚さt1はt2の40〜70%であることを特徴とす
る請求項1乃至5の何れか一つに記載の半導体装置。8. The thermal conductor according to claim 1, wherein a thickness of a first portion in contact with the semiconductor device or the semiconductor package is t.
1. The thickness t1 is 40 to 70% of t2, where t2 is the thickness of the second portion that does not contact the semiconductor device or the semiconductor package around the semiconductor device or the semiconductor package. The semiconductor device according to any one of the above.
ージと前記熱伝導体とを筐体内に収納保持する嵌合圧着
手段は、上部筐体と下部筐体との周縁部に設けられたネ
ジ機構による締め付け手段で構成したことを特徴とする
請求項1乃至5の何れか一つに記載の半導体装置。9. A fitting press-fitting means for housing and holding the semiconductor device or the semiconductor package and the heat conductor in a housing is tightened by a screw mechanism provided at a peripheral portion between the upper housing and the lower housing. 6. The semiconductor device according to claim 1, wherein the semiconductor device is constituted by a means.
ケージは、高速通信用素子を搭載していることを特徴と
する請求項1乃至5の何れか一つに記載の半導体装置。10. The semiconductor device according to claim 1, wherein the semiconductor device or the semiconductor package has a high-speed communication element mounted thereon.
上に電極接続用導電材料を介して電気的に接続、搭載す
る工程と、 前記半導体装置が搭載された配線基板を上部筐体と下部
筐体とに分割された筐体内に収納する工程とを有してな
る半導体装置の製造方法であって、 前記半導体装置が搭載された配線基板を筐体内に収納す
る工程においては、前記半導体装置と筐体との隙間に熱
伝導性弾性体を介挿し、上部筐体と下部筐体とを嵌合圧
着することにより、前記熱伝導性弾性体を前記半導体装
置と筐体間の隙間に圧縮装着すると共に、前記配線基板
を上部筐体及び下部筐体で挟持固定する工程を含み、前
記熱伝導性弾性体は、常温において前記電極接続用導電
材料より柔らかく、かつ、常温より高い温度域で加熱し
たときの圧縮荷重が常温での圧縮荷重より小さいシート
状熱伝導性弾性体からなり、 前記配線基板を筐体内に収納する工程の後工程として、
前記配線基板が収納された筐体を50〜100℃の温度
環境下で加熱保持する工程を付加したことを特徴とする
半導体装置の製造方法。11. A step of electrically connecting and mounting a semiconductor device having a heating element on a wiring board via a conductive material for electrode connection, and mounting the wiring board on which the semiconductor device is mounted in an upper housing and a lower housing. Accommodating in a housing divided into a body and a body, wherein the step of housing a wiring board on which the semiconductor device is mounted in the housing includes: The heat conductive elastic body is inserted into the gap between the housing and the upper housing and the lower housing by fitting and crimping, so that the heat conductive elastic body is compressed and mounted in the gap between the semiconductor device and the housing. And a step of clamping and fixing the wiring board between an upper housing and a lower housing, wherein the heat conductive elastic body is softer than the conductive material for electrode connection at room temperature, and is heated in a temperature range higher than room temperature. Compressive load at normal temperature Made small sheet thermally conductive elastomer piece from compressive load, as a step after the step of accommodating the wiring board in a housing,
A method of manufacturing a semiconductor device, further comprising a step of heating and holding a housing in which the wiring board is stored in a temperature environment of 50 to 100 ° C.
上に電極接続用導電材料を介して電気的に接続、搭載す
る工程と、 前記半導体装置が搭載された配線基板を上部筐体と下部
筐体とに分割された筐体内に収納する工程とを有してな
る半導体装置の製造方法であって、 前記半導体装置が搭載された配線基板を筐体内に収納す
る工程においては、前記半導体装置と筐体との隙間に熱
伝導性弾性体を介挿し、上部筐体と下部筐体とを嵌合圧
着することにより、前記熱伝導性弾性体を前記半導体装
置と筐体間の隙間に圧縮装着すると共に、前記配線基板
を上部筐体及び下部筐体で挟持固定する工程と、前記圧
縮荷重を加えた状態で熱伝導性弾性体を50〜100℃
の温度環境下で加熱保持する工程とを含み、前記熱伝導
性弾性体は、常温において前記電極接続用導電材料より
柔らかく、かつ、常温より高い温度域で加熱したときの
圧縮荷重が常温での圧縮荷重より小さいシート状熱伝導
性弾性体からなり、前記半導体装置の熱を前記熱伝導性
弾性体を介して前記筐体に伝導するようにしたことを特
徴とする半導体装置の製造方法。12. A step of electrically connecting and mounting a semiconductor device having a heating element on a wiring substrate via a conductive material for connecting electrodes, and connecting the wiring substrate on which the semiconductor device is mounted to an upper case and a lower case. Accommodating in a housing divided into a body and a body, wherein the step of housing a wiring board on which the semiconductor device is mounted in the housing includes: The heat conductive elastic body is inserted into the gap between the housing and the upper housing and the lower housing by fitting and crimping, so that the heat conductive elastic body is compressed and mounted in the gap between the semiconductor device and the housing. And holding and fixing the wiring board between the upper housing and the lower housing, and applying heat to the heat conductive elastic body at 50 to 100 ° C. while the compressive load is applied.
Step of heating and holding under a temperature environment, the heat conductive elastic body is softer than the conductive material for electrode connection at room temperature, and the compression load when heated in a temperature range higher than room temperature is at room temperature. A method of manufacturing a semiconductor device, comprising a sheet-like heat conductive elastic body having a smaller compressive load, wherein heat of the semiconductor device is conducted to the housing via the heat conductive elastic body.
上に電極接続用導電材料を介して電気的に接続、搭載す
る工程と、 前記半導体装置が搭載された配線基板を上部筐体と下部
筐体とに分割された筐体内に収納する工程とを有してな
る半導体装置の製造方法であって、 前記半導体装置が搭載された配線基板を筐体内に収納す
る工程においては、 前記配線基板上の半導体装置に電気的に接続される電
極端子と光ファイバーに接続される光学端子とを有して
いる光素子を、前記筐体内壁に予め配設する工程と、 前記半導体装置と筐体との隙間に熱伝導性弾性体を介
挿し、上部筐体と下部筐体とを嵌合圧着することによ
り、前記熱伝導性弾性体を前記半導体装置と筐体間の隙
間に圧縮装着すると共に、前記配線基板を上部筐体及び
下部筐体で挟持固定する工程とを含み、前記熱伝導性弾
性体は、常温において前記電極接続用導電材料より柔ら
かく、かつ、常温より高い温度域で加熱したときの圧縮
荷重が常温での圧縮荷重より小さいシート状熱伝導性弾
性体からなり、 前記配線基板を筐体内に収納する工程の後工程として、
前記配線基板が収納された筐体を50〜100℃の温度
環境下で加熱保持する工程を付加したことを特徴とする
半導体装置の製造方法。13. A step of electrically connecting and mounting a semiconductor device having a heating element on a wiring substrate via a conductive material for electrode connection; and mounting the wiring substrate on which the semiconductor device is mounted in an upper housing and a lower housing. Storing the wiring board on which the semiconductor device is mounted in the housing, the method comprising: housing the wiring board on which the semiconductor device is mounted in the housing. A step of previously disposing an optical element having an electrode terminal electrically connected to the semiconductor device and an optical terminal connected to the optical fiber on the inner wall of the housing; and The heat conductive elastic body is inserted into the gap, and the upper housing and the lower housing are fitted and press-fitted, so that the heat conductive elastic body is compression-mounted in the gap between the semiconductor device and the housing, and The wiring board is sandwiched between the upper housing and the lower housing. The step of holding and fixing, wherein the heat conductive elastic body is softer than the conductive material for electrode connection at room temperature, and a compression load when heated in a temperature range higher than room temperature is smaller than a compression load at room temperature. Made of a heat conductive elastic material in a shape, as a post-process of housing the wiring board in a housing,
A method of manufacturing a semiconductor device, further comprising a step of heating and holding a housing in which the wiring board is stored in a temperature environment of 50 to 100 ° C.
上に電極接続用導電材料を介して電気的に接続、搭載す
る工程と、 前記半導体装置が搭載された配線基板を上部筐体と下部
筐体とに分割された筐体内に収納する工程とを有してな
る半導体装置の製造方法であって、 前記半導体装置が搭載された配線基板を筐体内に収納す
る工程においては、 前記配線基板上の半導体装置に電気的に接続される電
極端子と光ファイバーに接続される光学端子とを有して
いる光素子を、予め前記筐体内壁に配設する工程と、 前記半導体装置と筐体との隙間に熱伝導性弾性体を介
挿し、上部筐体と下部筐体とを嵌合圧着することによ
り、前記熱伝導性弾性体を前記半導体装置と筐体間の隙
間に圧縮装着すると共に、前記配線基板を上部筐体及び
下部筐体で挟持固定する工程と、 前記圧縮荷重を加えた状態で熱伝導性弾性体を50〜
100℃の温度環境下で加熱保持する工程とを含み、前
記熱伝導性弾性体は、常温において前記電極接続用導電
材料より柔らかく、かつ、常温より高い温度域で加熱し
たときの圧縮荷重が常温での圧縮荷重より小さいシート
状熱伝導性弾性体からなり、前記半導体装置の熱を前記
熱伝導性弾性体を介して前記筐体に伝導するようにした
ことを特徴とする半導体装置の製造方法。14. A step of electrically connecting and mounting a semiconductor device having a heating element on a wiring substrate via a conductive material for connecting electrodes, and mounting the wiring substrate on which the semiconductor device is mounted in an upper case and a lower case. Storing the wiring board on which the semiconductor device is mounted in the housing, the method comprising: housing the wiring board on which the semiconductor device is mounted in the housing. A step of previously disposing an optical element having an electrode terminal electrically connected to the semiconductor device and an optical terminal connected to the optical fiber on the inner wall of the housing; and The heat conductive elastic body is inserted into the gap, and the upper housing and the lower housing are fitted and press-fitted, so that the heat conductive elastic body is compression-mounted in the gap between the semiconductor device and the housing, and The wiring board is sandwiched between the upper housing and the lower housing. Holding and fixing the heat conductive elastic body in a state where the compressive load is applied.
Heating at a temperature environment of 100 ° C., wherein the heat conductive elastic body is softer than the conductive material for electrode connection at room temperature, and has a compressive load when heated in a temperature range higher than room temperature. A method of manufacturing a semiconductor device, comprising: a sheet-like heat conductive elastic body smaller than a compression load at step (a), wherein heat of the semiconductor device is conducted to the housing via the heat conductive elastic body. .
0〜7.0 W/m・Kであって、室温での弾性率が、0.5〜
5.0MPaであることを特徴とする請求項11乃至14の
何れか一つに記載の半導体装置の製造方法。15. The heat conductive elastic body has a heat conductivity of 1.
0 to 7.0 W / m · K, and the elastic modulus at room temperature is 0.5 to
15. The method for manufacturing a semiconductor device according to claim 11, wherein the pressure is 5.0 MPa.
圧縮率あたりに必要な荷重で表わしたとき、30℃での
変形抵抗に対して、100℃での変形抵抗が1/3〜1
/2であるゴム質材からなることを特徴とする請求項1
1乃至14の何れか一つに記載の半導体装置の製造方
法。16. The heat conductive elastic body has a deformation resistance at 100 ° C. which is 1/3 to a deformation resistance at 30 ° C. when the deformation resistance is represented by a load required per unit compressibility. 1
2. The rubber material according to claim 1, which is made of a rubber material.
15. The method for manufacturing a semiconductor device according to any one of 1 to 14.
筐体間の隙間に圧縮装着する共に、前記配線基板を上部
筐体及び下部筐体で挟持固定する工程においては、前記
熱伝導性弾性体が前記半導体装置に接触する第一の部位
の厚さをt1、その周囲の前記半導体装置に接触しない
第二の部位の厚さをt2としたとき、厚さt1がt2の4
0〜70%となるように圧縮装着することを特徴とする
請求項11乃至14の何れか一つに記載の半導体装置の
製造方法。17. The method according to claim 17, wherein said heat conductive elastic body is compressed and mounted in a gap between said semiconductor device and said housing, and said wiring board is sandwiched and fixed between an upper housing and a lower housing. Assuming that the thickness of the first portion where the elastic body contacts the semiconductor device is t1 and the thickness of the surrounding second portion that does not contact the semiconductor device is t2, the thickness t1 is 4 of t2.
The method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is compression-mounted so as to be 0 to 70%.
Priority Applications (3)
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JP2001162282A JP4079604B2 (en) | 2001-05-30 | 2001-05-30 | Manufacturing method of semiconductor device |
TW091111103A TW556290B (en) | 2001-05-30 | 2002-05-24 | Semiconductor device |
PCT/JP2002/005164 WO2002099880A1 (en) | 2001-05-30 | 2002-05-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001162282A JP4079604B2 (en) | 2001-05-30 | 2001-05-30 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
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JP2002353388A true JP2002353388A (en) | 2002-12-06 |
JP4079604B2 JP4079604B2 (en) | 2008-04-23 |
Family
ID=19005439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2001162282A Expired - Fee Related JP4079604B2 (en) | 2001-05-30 | 2001-05-30 | Manufacturing method of semiconductor device |
Country Status (3)
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---|---|
JP (1) | JP4079604B2 (en) |
TW (1) | TW556290B (en) |
WO (1) | WO2002099880A1 (en) |
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