JP2002353265A - Mounting structure and method of mounting the same - Google Patents

Mounting structure and method of mounting the same

Info

Publication number
JP2002353265A
JP2002353265A JP2001160282A JP2001160282A JP2002353265A JP 2002353265 A JP2002353265 A JP 2002353265A JP 2001160282 A JP2001160282 A JP 2001160282A JP 2001160282 A JP2001160282 A JP 2001160282A JP 2002353265 A JP2002353265 A JP 2002353265A
Authority
JP
Japan
Prior art keywords
bump
solder
pad
mounting structure
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001160282A
Other languages
Japanese (ja)
Other versions
JP4483131B2 (en
Inventor
Kazuhiro Nobori
一博 登
Yuhei Yamashita
裕平 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001160282A priority Critical patent/JP4483131B2/en
Publication of JP2002353265A publication Critical patent/JP2002353265A/en
Application granted granted Critical
Publication of JP4483131B2 publication Critical patent/JP4483131B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10125Reinforcing structures
    • H01L2224/10126Bump collar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10145Flow barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/118Post-treatment of the bump connector
    • H01L2224/1183Reworking, e.g. shaping
    • H01L2224/1184Reworking, e.g. shaping involving a mechanical process, e.g. planarising the bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1301Shape
    • H01L2224/13016Shape in side view
    • H01L2224/13017Shape in side view being non uniform along the bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354Coating
    • H01L2224/1356Disposition
    • H01L2224/13561On the entire surface of the core, i.e. integral coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354Coating
    • H01L2224/1356Disposition
    • H01L2224/13563Only on parts of the surface of the core, i.e. partial coating
    • H01L2224/13565Only outside the bonding interface of the bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354Coating
    • H01L2224/1357Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354Coating
    • H01L2224/13575Plural coating layers
    • H01L2224/1358Plural coating layers being stacked
    • H01L2224/13582Two-layer coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/38Effects and problems related to the device integration
    • H01L2924/384Bump effects
    • H01L2924/3841Solder bridging

Abstract

PROBLEM TO BE SOLVED: To provide a mounting structure and a method of mounting the structure capable of expanding a permissible current value and mounting an electronic component on a circuit board by solder, which have been difficult by a conventional flip chip mounting structure for mounting the electronic component on the circuit board or the like. SOLUTION: A surface of a metal material 10 made of aluminum or having aluminum as main component or a surface of conductive resin is coated with at least one soldering material 11 out of Au, Ag, Cu, Sn and Ni to form a bump mold 20, solder-stop material is applied or attached on a bump 14 and a bump 15, where solder-stop band has been simultaneously formed when forming the bump, or on a bump 16 formed only by the soldering material, and the bumps are connected to a terminal electrode 4 of the circuit board 3 with cream solder 13.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は電子部品と回路基板
との実装構造体、特にバンプを介して半導体素子を回路
基板に実装して得られる実装構造体およびその実装方法
に関するものである。
The present invention relates to a mounting structure of an electronic component and a circuit board, and more particularly to a mounting structure obtained by mounting a semiconductor element on a circuit board via bumps and a mounting method thereof.

【0002】[0002]

【従来の技術】電子機器の小型化、高性能化に伴い電子
部品の実装構造体は、接続距離を短くできるフリップチ
ップ実装法が多く用いられている。図9を用いて従来の
実装構造体(特公平6−3820号公報)について説明
する。
2. Description of the Related Art With the miniaturization and high performance of electronic equipment, flip-chip mounting methods capable of shortening the connection distance are often used for mounting structures of electronic parts. A conventional mounting structure (Japanese Patent Publication No. 6-3820) will be described with reference to FIG.

【0003】回路形成面に複数のパッド2が設けられて
いる電子部品(以下半導体素子という)1はそのパッド
2に金バンプ5がバンプボンディング機により形成され
ている。金バンプ5は通常金線を用いて超音波振動装
置、加熱装置、加圧装置、金線の間歇連続送り装置等よ
りなるバンプボンディング機を用いて形成されるのが一
般的である。
An electronic component (hereinafter, referred to as a semiconductor device) 1 having a plurality of pads 2 provided on a circuit forming surface has gold bumps 5 formed on the pads 2 by a bump bonding machine. The gold bump 5 is generally formed using a gold wire and a bump bonding machine including an ultrasonic vibrator, a heating device, a pressurizing device, an intermittent continuous feeding device for the gold wire, and the like.

【0004】次にこのように複数の金バンプ5が形成さ
れた半導体素子1の金バンプ5に一定量の導電性接着剤
6を所定の方法で付着させた後、金バンプ5を回路基板
3の一面に形成されている端子電極4に位置合わせして
接合し、加熱して導電性接着剤6を乾燥硬化させて電気
的に接続することにより実装構造体が形成される。
Next, a predetermined amount of conductive adhesive 6 is adhered to the gold bump 5 of the semiconductor element 1 on which the plurality of gold bumps 5 are formed in a predetermined manner, and then the gold bump 5 is attached to the circuit board 3. The mounting structure is formed by aligning and joining the terminal electrode 4 formed on one surface of the substrate, heating and drying and curing the conductive adhesive 6 and electrically connecting the conductive adhesive 6.

【0005】[0005]

【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、乾燥硬化時の急速な加熱により溶剤の膨
張蒸発による導電性接着剤6の飛散、硬化の異常反応、
温度や時間の不足による接続強度不足を生じ、接続信頼
性が低下するという課題がある。また高価な金線を用い
るため、金バンプ5はその大きさからパッドの微小間隔
部への使用に制限される。また濡れ性の良いはんだは金
バンプ5に沿って濡れ上がり金バンプ5どうしの短絡が
発生する。また場合によっては金バンプ5を経て半導体
素子1の回路と接触してはんだの主成分である錫が半導
体素子に侵入し回路機能に損傷などの悪影響を及ぼす可
能性もある。しかもパッドの微小間隔部はこのような問
題を生じやすく使用が難しい。
However, in the above configuration, the conductive adhesive 6 is scattered due to the expansion and evaporation of the solvent due to rapid heating at the time of drying and curing, and an abnormal reaction of curing occurs.
There is a problem that connection strength is insufficient due to insufficient temperature or time, and connection reliability is reduced. Further, since an expensive gold wire is used, the size of the gold bump 5 is limited to use in a minute interval portion of the pad. In addition, the solder having good wettability wets along the gold bumps 5 and short-circuits between the gold bumps 5 occur. In some cases, there is a possibility that tin, which is a main component of the solder, contacts the circuit of the semiconductor element 1 via the gold bump 5 and penetrates the semiconductor element to adversely affect the circuit function. In addition, the minute space of the pad is liable to cause such a problem and is difficult to use.

【0006】本発明は上記の課題を解決するものであ
り、バンプにバンプ阻止帯の形成やバンプ阻止材を塗布
または装着することにより半導体素子等の電子部品と回
路基板とのはんだづけにおいて、良好な接続を可能にす
ることができ、したがって安価で接続信頼性に優れた実
装構造体を提供することを目的とするものである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has a good effect in soldering an electronic component such as a semiconductor element to a circuit board by forming a bump stop band on a bump or applying or mounting a bump stop material. It is an object of the present invention to provide a mounting structure which enables connection and is inexpensive and has excellent connection reliability.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に本発明は、パッドが形成された半導体素子と端子電極
が形成された回路基板とをはんだづけ領域とはんだが半
導体素子の方に進行することを防止するためのはんだ阻
止帯または、はんだ阻止材とがそれぞれ形成されたバン
プを用いて電気的に接続した構造を有するものであり、
これらにより得られた実装構造体の接続信頼性を向上さ
せることができる。
SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a method for soldering a semiconductor element having pads formed thereon and a circuit board having terminal electrodes formed thereon, and the solder proceeds toward the semiconductor element. It has a structure that is electrically connected by using a bump formed with a solder inhibition band or a solder inhibition material to prevent that,
Thus, the connection reliability of the mounting structure obtained can be improved.

【0008】[0008]

【発明の実施の形態】本発明の請求項1記載の発明は、
表面にパッドが形成された電子部品の前記パッド上に表
面にはんだづけ領域と、はんだ阻止帯とを備えたバンプ
を形成したこととしたものであり、はんだを用いて電子
部品と回路基板や他の部品とを接続するときに溶けたは
んだがはんだ濡れ性により、はんだづけ材料を伝い電子
部品の回路にいたり電子部品回路が損傷することや、バ
ンプが複数の場合には電気的短絡を生じることをバンプ
のはんだ阻止帯により防止し接続の品質、信頼性を向上
させるという作用を有するものである。
BEST MODE FOR CARRYING OUT THE INVENTION
A bump having a soldering area and a solder stop zone on the surface is formed on the pad of the electronic component having the pad formed on the surface, and the electronic component and the circuit board or other components are formed using solder. The solder that melts when connecting to the component, due to the solder wettability, will pass through the soldering material and enter the circuit of the electronic component or damage the electronic component circuit. Has the effect of improving the quality and reliability of the connection by preventing the solder stop band.

【0009】本発明の請求項2記載の発明は、電子部品
上のパッドと回路基板上の端子電極とを電気的に接続す
るバンプがはんだづけ材料で被覆された被覆上にはんだ
阻止材を塗布または装着したこととしたものであり、バ
ンプのパッドに近い部分に樹脂、ゴム等のはんだのつか
ないはんだ阻止材を塗布または密着して装着することに
よりバンプ形成時にはんだ阻止帯を形成することなく、
溶けたはんだが濡れ性によりはんだづけ材料の被覆上を
進行して電子部品回路に至るのを阻止し、はんだによる
電子部品回路の電気的短絡、損傷を防止して接続の品
質、信頼性の向上がはかれるという作用を有するもので
ある。
According to a second aspect of the present invention, a bump for electrically connecting a pad on an electronic component and a terminal electrode on a circuit board is coated with a soldering material. By applying or attaching a solder blocking material such as resin or rubber that does not adhere to solder to the portion near the bump pad, without forming a solder blocking band at the time of bump formation,
Prevents the molten solder from proceeding on the coating of the soldering material due to wettability and reaching the electronic component circuit, preventing the electrical short circuit and damage of the electronic component circuit by solder, and improving the quality and reliability of the connection It has the function of peeling.

【0010】本発明の請求項3記載の発明は、表面に複
数のパッドが形成された電子部品と表面に複数の端子電
極が形成された回路基板とを備え、前記電子部品と前記
回路基板とが表面にはんだづけ領域とはんだ阻止帯とを
備えた複数のバンプを介して電気的に接続されるとした
ものであり、バンプに電子部品のパッドと回路基板の端
子電極間ではんだづけできないはんだ阻止帯をもうける
ことにより、端子電極とバンプとをはんだにより接合す
るときに溶けたはんだがはんだ濡れ性により、はんだづ
け材料を伝い電子部品の回路に至り電気的短絡や回路を
損傷することを防止し接続の品質、信頼性を向上させる
という作用を有するものである。
According to a third aspect of the present invention, there is provided an electronic component having a plurality of pads formed on a surface thereof, and a circuit board having a plurality of terminal electrodes formed on a surface thereof. Are electrically connected via a plurality of bumps having a soldering area and a solder stop zone on the surface, and the solder stop zone cannot be soldered between the pad of the electronic component and the terminal electrode of the circuit board to the bump. In this way, the solder melted when joining the terminal electrodes and the bumps with the solder can be prevented from penetrating the soldering material to the circuit of the electronic component due to solder wettability and damaging the circuit by electrical short-circuiting. It has the effect of improving quality and reliability.

【0011】本発明の請求項4記載の発明は、電子部品
を半導体素子としたものであり、半導体素子はバンプ形
成を最も必要とするものの1つでありバンプと端子電極
の間ではんだづけできないはんだ阻止帯をもうけるか、
はんだ阻止材を塗布または装着することにより、端子電
極とバンプをはんだにより接合することが可能となり半
導体素子による実装構造体形成が容易になるという作用
を有するものである。
According to a fourth aspect of the present invention, the electronic component is a semiconductor element, and the semiconductor element is one of the elements most required to form a bump and cannot be soldered between the bump and the terminal electrode. Make a stop zone,
By applying or attaching the solder blocking material, the terminal electrodes and the bumps can be joined by soldering, which has an effect that the mounting structure can be easily formed by the semiconductor element.

【0012】特に半導体素子にはんだの主成分である錫
が侵入することによる回路機能の損傷を防止できる。
In particular, it is possible to prevent the circuit function from being damaged due to the penetration of tin, which is the main component of the solder, into the semiconductor element.

【0013】本発明の請求項5記載の発明は、バンプを
アルミニウムまたはアルミニウムを主成分とする金属材
料から構成したものであり、軟らかく、はんだのつかな
い性質を有し、またバンプ形状の形成は小さい力で行う
ことができるため電子部品の損傷を防止すると共に、バ
ンプにはんだづけ材料による被覆のない部分を設けるこ
とにより容易にはんだ阻止帯を形成できるという作用を
有するものである。
According to a fifth aspect of the present invention, the bump is made of aluminum or a metal material containing aluminum as a main component, and has a soft and solder-free property. Since it can be performed with a small force, it has the effect of preventing damage to the electronic component and easily forming a solder stop zone by providing a portion of the bump that is not covered with the soldering material.

【0014】本発明の請求項6記載の発明は、バンプが
導電性樹脂に、はんだ付け材料を被覆して形成されたこ
ととしたものであり、バンプ形成体のアルミニウムまた
はアルミニウムを主成分とする金属材料の代わりに導電
性樹脂を用いるものであり、樹脂ははんだがつかず、ま
た加熱により軟らかくなり変形させやすく小さい力でバ
ンプ形成ができるため半導体素子の損傷を防止できると
いう作用を有するものである。
According to a sixth aspect of the present invention, the bump is formed by coating a conductive resin with a soldering material, and the bump-forming body is made of aluminum or aluminum as a main component. A conductive resin is used in place of a metal material.The resin has the effect of preventing damage to semiconductor elements because it does not adhere to solder, is softened by heating, easily deformed, and can form bumps with a small force. is there.

【0015】本発明の請求項7記載の発明は、バンプが
球状体、柱状体、多角形状体のうちいずれかの形状を備
えることとしたものであり、アルミニウムまたはアルミ
ニウムを主成分とする金属材料や導電性樹脂を用いるた
め軟らかく、接続部に適した形状を選択形成できるとい
う作用を有するものである。
According to a seventh aspect of the present invention, the bump has one of a spherical body, a columnar body, and a polygonal body, and the bump is made of aluminum or a metal material containing aluminum as a main component. And the use of a conductive resin makes it possible to selectively form a shape suitable for the connecting portion.

【0016】本発明の請求項8記載の発明は、はんだづ
け材料が、金、銀、銅、錫、ニッケルのうち、少なくと
もいずれかの金属材料または少なくともいずれかの金属
材料を主成分とする合金材料から構成されるとしたもの
であり、いずれの材料もはんだづけ性が極めて良く接続
の品質、信頼性向上を容易にするという作用を有するも
のである。
The invention according to claim 8 of the present invention is characterized in that the soldering material is at least one of gold, silver, copper, tin and nickel, or an alloy material containing at least one of the metal materials as a main component. All of the materials have extremely good solderability and have an effect of facilitating improvement of connection quality and reliability.

【0017】本発明の請求項9記載の発明は、電子部品
上のパッドと回路基板上の端子電極とを電気的に接続す
るバンプがはんだづけ材料で被覆された領域外にはんだ
阻止帯を備えたこととしたものであり、アルミニウムま
たはアルミニウムを主成分とする金属材料や導電性樹脂
によるはんだ阻止帯形成部を有したバンプ形成体を用い
ることによりバンプ形成ノズルによるはんだ阻止帯形成
をしなくともはんだ阻止帯形成部により溶けたはんだが
濡れ性によりはんだづけ材料の被覆上を進行して電子部
品回路に至るのを阻止し、はんだによる電子部品回路の
電気的短絡、損傷を防止して接続の品質、信頼性の向上
がはかれるという作用を有するものである。
According to a ninth aspect of the present invention, a solder stop band is provided outside a region where a bump for electrically connecting a pad on an electronic component and a terminal electrode on a circuit board is covered with a soldering material. The use of a bump formed body having a solder stop band forming portion made of aluminum or a metal material containing aluminum as a main component or a conductive resin allows solder to be formed without forming a solder stop band by a bump forming nozzle. The blocking zone forming part prevents the melted solder from proceeding on the coating of the soldering material due to wettability and reaching the electronic component circuit, preventing electrical short circuit and damage of the electronic component circuit due to solder, and improving the connection quality, This has the effect of improving reliability.

【0018】本発明の請求項10記載の発明は、バンプ
が球状体、半球状体、太鼓状体、柱状体のうちいずれか
のバンプ形成体を用いて形成されることとしたものであ
り、球状体は吸着位置に制限がなく、半球状体、柱状体
でパッドへの接合部を有するものはパッドと同系材質の
ため金属間接合が容易であり、太鼓状体、柱状体は細長
くすることにより小さいパッドと小さいパッド間隔に対
応しやすく、バンプ形成されるパッドおよび端子電極の
大きさ、バンプ形成機、実装構造体に求められる特性、
機能にあわせ、最も適したバンプ形成体を選択できるた
め、より信頼性の高い接続ができるという作用を有す
る。
According to a tenth aspect of the present invention, the bump is formed by using any one of a spherical body, a hemispherical body, a drum-shaped body, and a columnar body. Spherical bodies have no restriction on the adsorption position. Semi-spherical bodies and columnar bodies that have a joint to the pad are made of the same material as the pad, so that metal-to-metal bonding is easy, and drums and columns should be elongated. It is easy to respond to smaller pads and smaller pad spacing, the size of the pads and terminal electrodes to be bumped, the characteristics required for bump forming machines, mounting structures,
Since the most suitable bump forming body can be selected according to the function, there is an effect that a more reliable connection can be made.

【0019】本発明の請求項11記載の発明は、アルミ
ニウムまたはアルミニウムを主成分とする金属材料の少
なくとも一部分にはんだづけ材料を被覆したバンプ形成
体をバンプ形成ノズルで吸着して電子部品のパッドに位
置合わせする工程と、前記バンプ形成体を吸着したまま
前記バンプ形成ノズルを下降させて前記バンプ形成体を
前記電子部品のパッド上に押しつけながら超音波振動を
加えることにより、はんだづけ材料の一部を剥離しては
んだ阻止帯を形成すると同時に、前記パッドとの接続を
行う工程とを備えたこととしたものであり、各工程を連
続して行える設備と軟らかい塑性変形しやすい材料のバ
ンプ形成体を用いることにより任意の形状の量産性のよ
いバンプ形成が容易にできるという作用を有するもので
ある。
According to the eleventh aspect of the present invention, a bump forming body in which at least a part of aluminum or a metal material containing aluminum as a main component is coated with a soldering material is sucked by a bump forming nozzle and positioned on a pad of an electronic component. A step of aligning and lowering the bump forming nozzle while adsorbing the bump formed body and applying ultrasonic vibration while pressing the bump formed body onto the pad of the electronic component, thereby removing a part of the soldering material At the same time as forming the solder stop zone, and connecting to the pad, using equipment capable of performing each step continuously and a bump-formed body of a soft plastically deformable material. Thereby, it is possible to easily form bumps of any shape with good mass productivity.

【0020】本発明の請求項12記載の発明は、バンプ
形成体とパッドとが前記バンプ形成体のはんだづけ材料
で被覆されていない部分を用いて接続されることとした
ものであり、電子部品のなかでも半導体素子のパッドは
アルミニウム系の材料が多く、バンプ形成体もはんだづ
け材料で被覆されていないアルミニウムまたはアルミニ
ウムを主成分とする金属材料部分を用いて接続すること
により、同じ材料系の接続となり接続条件の許容範囲を
広くできて接続の品質向上をはかれるという作用を有す
るものである。
According to a twelfth aspect of the present invention, the bump forming body and the pad are connected by using a portion of the bump forming body which is not covered with a soldering material. Above all, the pads of semiconductor elements are mostly made of aluminum material, and the bump material is connected by using aluminum or a metal material mainly composed of aluminum which is not covered with soldering material. This has the effect of widening the allowable range of connection conditions and improving the quality of the connection.

【0021】本発明の請求項13記載の発明は、バンプ
形成体とパッドとが前記バンプ形成体のはんだづけ材料
で被覆された部分を用いて接続されることとしたもので
ありバンプ形成体にはんだづけ材料が全体に被覆されて
いればバンプ形成体のどの部分でも接続できるため作業
性向上がはかれるという作用を有するものである。
According to a thirteenth aspect of the present invention, the bump forming body and the pad are connected by using a portion of the bump forming body which is covered with a soldering material. If the material is entirely covered, the connection can be made at any part of the bump formed body, so that the workability can be improved.

【0022】以下本発明の実施の形態について、図面を
用い同一部分については同一番号を付与して説明する。
Hereinafter, embodiments of the present invention will be described with reference to the drawings, in which the same portions are assigned the same reference numerals.

【0023】(実施の形態1)図1(a)は本発明の第1
の実施形態における半導体素子等よりなる電子部品(以
下半導体素子という)とバンプ14による実装構造体の
一部断面を示すものであり、図に示すように半導体素子
1はその表面に複数のパッド2を備え、パッド2上にバ
ンプ形成体20でバンプ14が形成されている。バンプ
形成体20はアルミニウムまたはアルミニウムを主成分
とする金属材料10にはんだづけ材料11で被覆して形
成されている。バンプ14は略三角形で底辺10aと頂
点10bにはんだづけ材料11を備え、底辺10aと頂点
10bの間にはんだづけ材料11のないはんだ阻止帯1
2を形成している。底辺10aにおいてパッド2とはん
だづけ材料11が金属間接合され、半導体素子1と電気
的接続をしている。
(Embodiment 1) FIG. 1A shows a first embodiment of the present invention.
1 shows a partial cross-section of an electronic component (hereinafter, referred to as a semiconductor element) including a semiconductor element and the like and a mounting structure formed by bumps 14 according to the embodiment. As shown in the drawing, a semiconductor element 1 has a plurality of pads 2 on its surface. The bump 14 is formed on the pad 2 by the bump forming body 20. The bump forming body 20 is formed by coating aluminum or a metal material 10 containing aluminum as a main component with a soldering material 11. The bump 14 has a substantially triangular shape and is provided with a soldering material 11 at the base 10a and the vertex 10b, and has no soldering material 11 between the base 10a and the vertex 10b.
2 are formed. The pad 2 and the soldering material 11 are metal-to-metal bonded at the bottom side 10a, and are electrically connected to the semiconductor element 1.

【0024】バンプ14の形成方法について図3を用い
て説明する。図3は半導体素子1のパッド2にバンプ形
成体20を用いてバンプ14を形成する工程を示す。
A method for forming the bump 14 will be described with reference to FIG. FIG. 3 shows a step of forming the bumps 14 on the pads 2 of the semiconductor element 1 using the bump forming body 20.

【0025】バンプ14の形成に用いるバンプ形成体2
0(20a、20e)は図2(a)、図2(e)に示す球状体ま
たは柱状体でアルミニウムまたはアルミニウムを主成分
とする金属材料10にはんだづけ材料11を全面に被覆
して構成されているが、説明に用いるバンプ形成体20
は図2(a)の球状体を用いて行う。以下バンプ14の形
成工程順に説明をする。まず図3(a)において別途形成
されたアルミニウムまたはアルミニウムを主成分とする
金属材料10にはんだづけ材料11を被覆したバンプ形
成体20(20a)をバンプ形成ノズル30の吸着穴3
1により吸着して、半導体素子1のパッド2の上方に位
置合わせし、図3(b)でバンプ形成体20(20a)を吸
着したままバンプ形成ノズル30を下降させ、バンプ形
成体20(20a)をパッド2に押しつけ加圧する。加
圧しながらバンプ形成ノズル30を介して超音波振動を
バンプ形成体20(20a)に加える。
Bump forming body 2 used for forming bump 14
Reference numeral 0 (20a, 20e) denotes a spherical or columnar body shown in FIGS. 2A and 2E, which is formed by coating a metal material 10 containing aluminum or aluminum as a main component with a soldering material 11 over the entire surface. The bump forming body 20 used for the description
Is performed using the spherical body of FIG. The description will be made below in the order of the steps of forming the bumps 14. First, in FIG. 3A, a bump forming body 20 (20a) formed by coating a soldering material 11 with aluminum or a metal material 10 containing aluminum as a main component, which is separately formed, is attached to the suction hole 3 of the bump forming nozzle 30.
1 and is positioned above the pad 2 of the semiconductor element 1, and the bump forming nozzle 30 is lowered while the bump forming body 20 (20a) is suctioned in FIG. ) Is pressed against the pad 2 and pressurized. Ultrasonic vibration is applied to the bump forming body 20 (20a) through the bump forming nozzle 30 while applying pressure.

【0026】加圧、超音波振動により図3(c)において
バンプ形成体20(20a)は略三角形に塑性変形しそ
の過程においてはんだづけ材料11はバンプ形成ノズル
30との接触部であるバンプ形成部33の角部32との
摩擦により破られアルミニウムまたはアルミニウムを主
成分とする金属材料10が露出してはんだ阻止帯12を
形成することができる。同時にパッド2との間において
は、はんだづけ材料11とパッド2が金属間接合する。
なお本実施形態では加圧と超音波振動を併用したが、加
圧だけではんだ阻止帯12を形成することも可能であ
る。また複数のバンプ14を形成した半導体素子1を用
いて説明したがバンプ14は単体であってもよい。
In FIG. 3C, the bump forming body 20 (20 a) is plastically deformed into a substantially triangular shape by pressurization and ultrasonic vibration, and in the process, the soldering material 11 is in contact with the bump forming nozzle 30. Aluminum or the metal material 10 containing aluminum as a main component is exposed by being rubbed by friction with the corner portion 32 of 33, and the solder inhibition zone 12 can be formed. At the same time, between the pad 2 and the pad 2, the soldering material 11 and the pad 2 are bonded to each other.
In this embodiment, the pressurization and the ultrasonic vibration are used together. However, the solder blocking zone 12 can be formed only by the pressurization. Also, although the description has been given using the semiconductor element 1 on which the plurality of bumps 14 are formed, the bumps 14 may be a single body.

【0027】バンプ14の形成とパッド2との接合がで
きると図3(d)に示すようにバンプ形成ノズル30が上
昇しパッド2にバンプ14が形成される。この図3
(a)、図3(b)、図3(c)、図3(d)の工程を繰り返して半
導体素子1に複数のバンプ14を形成することができ
る。なお略三角形以外の多角形状体として図5、特に図
5(a)、(c)に示す様な塔型、凸型等の形状も考えら
れる。この場合バンプ形成ノズル30のバンプ形成部3
3の形状を変更することにより形成する。
When the formation of the bumps 14 and the bonding of the pads 2 are completed, the bump forming nozzles 30 are raised and the bumps 14 are formed on the pads 2 as shown in FIG. This figure 3
A plurality of bumps 14 can be formed on the semiconductor element 1 by repeating the steps of (a), (b), (c), and (d) of FIG. In addition, as a polygonal body other than a substantially triangular shape, a shape such as a tower shape or a convex shape as shown in FIG. 5, particularly, FIGS. In this case, the bump forming section 3 of the bump forming nozzle 30
3 is formed by changing the shape.

【0028】(実施の形態2)図1(b)は本発明の第2
の実施形態における半導体素子1とバンプ15による実
装構造体の一部断面を示すものであり図に示すように半
導体素子1はその表面に複数のパッド2を備え、パッド
2上にバンプ形成体20でバンプ15が形成されてい
る。バンプ形成体20はアルミニウムまたはアルミニウ
ムを主成分とする金属材料10の一面を除いてはんだづ
け材料11で被覆して形成されている。
(Embodiment 2) FIG. 1B shows a second embodiment of the present invention.
1 shows a partial cross section of a mounting structure including a semiconductor element 1 and a bump 15 according to the embodiment. As shown in the drawing, the semiconductor element 1 has a plurality of pads 2 on its surface, and a bump forming body 20 The bump 15 is formed. The bump forming body 20 is formed by covering with a soldering material 11 except one surface of aluminum or the metal material 10 containing aluminum as a main component.

【0029】バンプ15は略三角形で側面(10c)と
頂点(10b)にはんだづけ材料11を備え、底辺(1
0a)と頂点(10b)の間にはんだづけ材料11のない
はんだ阻止帯12を形成している。底辺においてパッド
2とパッドへの接合部21であるアルミニウムまたはア
ルミニウムを主成分とする金属材料10が金属間接合さ
れ、半導体素子1と電気的接続をしている。
The bump 15 is substantially triangular and has the soldering material 11 on the side surface (10c) and the vertex (10b).
A solder stop zone 12 having no soldering material 11 is formed between Oa) and the apex (10b). On the bottom side, the pad 2 and aluminum or a metal material 10 containing aluminum as a main component, which is a bonding portion 21 to the pad, are metal-to-metal bonded and electrically connected to the semiconductor element 1.

【0030】バンプ15の形成方法について図4を用い
て説明する。図4は半導体素子1のパッド2にバンプ形
成体20を用いてバンプ15を形成する工程断面図であ
る。
A method for forming the bump 15 will be described with reference to FIG. FIG. 4 is a process cross-sectional view of forming the bump 15 on the pad 2 of the semiconductor element 1 using the bump forming body 20.

【0031】バンプ15の形成に用いるバンプ形成体2
0(20b,20f)は図2(b)、図2(f)に示す半球状体
または柱状体でアルミニウムまたはアルミニウムを主成
分とする金属材料10の一面をパッドへの接合部21と
し、パッドへの接合部21以外をはんだづけ材料11を
被覆して構成されているが、説明は図2(b)の半球状体
のバンプ形成体20(20b)を用いて行う。以下、バ
ンプ15の形成工程順に説明をする。まず図4(a)にお
いて別途形成されたアルミニウムまたはアルミニウムを
主成分とする金属材料10の一面をパッドへの接合部2
1とする半球状体のバンプ形成体20(20b)のはん
だづけ材料11の部分をバンプ形成ノズル30の吸着穴
31により吸着して、パッドへの接合部21と半導体素
子1のパッド2を対面させてパッド2の上方に位置合わ
せし、図4(b)においてバンプ形成体20(20b)を吸
着したままバンプ形成ノズル30を下降させ、バンプ形
成体20(20b)をパッド2に押しつけ加圧する。加
圧しながらバンプ形成ノズル30を介して超音波振動を
バンプ形成体20(20b)に加える。加圧、超音波振
動により図4(c)においてバンプ形成体20(20b)は
略三角形に塑性変形しその過程においてはんだづけ材料
11はバンプ形成ノズル30との接触部であるバンプ形
成部33の角部32との摩擦により破られアルミニウム
またはアルミニウムを主成分とする金属材料10が露出
してはんだ阻止帯12を形成することができる。
Bump forming body 2 used for forming bump 15
Reference numeral 0 (20b, 20f) denotes a hemispherical body or a columnar body shown in FIGS. 2 (b) and 2 (f), and one surface of the metal material 10 mainly composed of aluminum or aluminum is used as a bonding portion 21 to the pad. Although the portion other than the joint 21 is coated with the soldering material 11, the description will be made using the hemispherical bump formed body 20 (20b) of FIG. 2B. The description will be made below in the order of the steps of forming the bumps 15. First, in FIG. 4A, one surface of aluminum or a metal material 10 containing aluminum as a main component, which is separately formed, is joined to a pad 2 by a bonding method.
The portion of the soldering material 11 of the hemispherical bump-forming body 20 (20b) designated as 1 is sucked by the suction hole 31 of the bump-forming nozzle 30 so that the bonding portion 21 to the pad and the pad 2 of the semiconductor element 1 face each other. 4B, the bump forming nozzle 30 is lowered while the bump forming body 20 (20b) is being sucked in FIG. 4B, and the bump forming body 20 (20b) is pressed against the pad 2 and pressed. Ultrasonic vibration is applied to the bump forming body 20 (20b) through the bump forming nozzle 30 while applying pressure. In FIG. 4 (c), the bump forming body 20 (20b) is plastically deformed into a substantially triangular shape by pressurization and ultrasonic vibration, and in the process, the soldering material 11 becomes a corner of the bump forming portion 33 which is a contact portion with the bump forming nozzle 30. Aluminum or the metal material 10 containing aluminum as a main component is exposed by being rubbed by the friction with the portion 32 to form the solder inhibition zone 12.

【0032】同時にパッド2との間においては、パッド
への接合部21のアルミニウムまたはアルミニウムを主
成分とする金属材料10とパッド2が金属間接合する。
バンプ15の形成とパッド2との接合ができると図4
(d)に示すようにバンプ形成ノズル30が上昇しパッド
2にバンプ15が形成される。この図4(a)、図4(b)、
図4(c)、図4(d)の工程を繰り返して半導体素子1に複
数のバンプ15を形成することができる。なお略三角形
以外の多角形状体として図5、特に図5(b)、(d)に
示す様な塔型、凸型等の形状も考えられる。この場合バ
ンプ形成ノズル30のバンプ形成部33の形状を変更す
ることにより形成する。
At the same time, between the pad 2 and the pad 2, aluminum or a metal material 10 containing aluminum as a main component of the bonding portion 21 to the pad and the pad 2 are inter-metal bonded.
FIG. 4 shows that the bump 15 can be formed and the pad 2 can be joined.
As shown in (d), the bump forming nozzle 30 is raised, and the bump 15 is formed on the pad 2. 4 (a), 4 (b),
A plurality of bumps 15 can be formed on the semiconductor element 1 by repeating the steps of FIGS. 4C and 4D. Note that, as a polygonal body other than the substantially triangular shape, a shape such as a tower shape or a convex shape as shown in FIG. 5, particularly, FIGS. In this case, the bump is formed by changing the shape of the bump forming portion 33 of the bump forming nozzle 30.

【0033】(実施の形態3)図1(c)は本発明の第3
の実施形態における半導体素子1とバンプ16による実
装構造体の一部断面を示すものであり図に示すように半
導体素子1はその表面に複数のパッド2を備え、パッド
2上にバンプ形成体20を用いてバンプ16を形成しパ
ッド2に近い部分にはんだ阻止材12aを塗布または装
着したものである。
(Embodiment 3) FIG. 1C shows a third embodiment of the present invention.
1 shows a partial cross section of a mounting structure including a semiconductor element 1 and a bump 16 according to the embodiment. As shown in the drawing, the semiconductor element 1 has a plurality of pads 2 on its surface, and a bump forming body 20 The bump 16 is formed by using the method described above, and a solder blocking material 12a is applied or mounted on a portion close to the pad 2.

【0034】バンプ形成体20はアルミニウムまたはア
ルミニウムを主成分とする金属材料10にはんだづけ材
料11で被覆して形成されている。バンプ16は全面に
はんだづけ材11で被覆され、パッド2とバンプ16と
の接続部と、凸型の頂点との間にはんだ阻止材12aを
塗布または装着している。
The bump forming body 20 is formed by coating aluminum or a metal material 10 containing aluminum as a main component with a soldering material 11. The bump 16 is entirely covered with a soldering material 11, and a solder blocking material 12a is applied or mounted between a connection portion between the pad 2 and the bump 16 and a convex vertex.

【0035】バンプ16の形成方法について図3を用い
図3中の略三角形を凸型ではんだ阻止帯のないものとし
て説明する。
A method of forming the bump 16 will be described with reference to FIG. 3 assuming that the substantially triangular shape in FIG. 3 is convex and has no solder stop zone.

【0036】バンプ16の形成に用いるバンプ形成体2
0(20a,20b,20e,20f)は図2(a)球状体、
図2(b) 半球状体、図2(e)、図2(f)に示す柱状体でア
ルミニウムまたはアルミニウムを主成分とする金属材料
10をはんだづけ材料11で被覆して構成されているが
説明は図2(a)の球状体のバンプ形成体20(20a)を
用いて行う。以下バンプ16の形成工程順に説明をす
る。まず図3(a)において別途形成された球状体のバン
プ形成体20(20a)をバンプ形成ノズル30の吸着
穴31により吸着して、パッド2の上方に位置合わせ
し、図3(b)においてバンプ形成体20(20a)を吸着
したままバンプ形成ノズル30を下降させ、バンプ形成
体20(20a)をパッド2に押しつけ加圧する。加圧
しながらバンプ形成ノズル30を介して超音波振動をバ
ンプ形成体20(20a)に加える。加圧、超音波振動
により図3(c)においてバンプ形成体20(20a)は凸
型に塑性変形すると同時にパッド2との間においては、
はんだづけ材料11とパッド2とが金属間接合する。
Bump forming body 2 used for forming bump 16
0 (20a, 20b, 20e, 20f) is a spherical body in FIG.
FIG. 2 (b) is a hemispherical body, a columnar body shown in FIGS. 2 (e) and 2 (f), which is formed by coating a metal material 10 mainly composed of aluminum or aluminum with a soldering material 11. Is performed using the spherical bump forming body 20 (20a) of FIG. The description will be made below in the order of the steps of forming the bumps 16. First, the ball-shaped bump forming body 20 (20a) separately formed in FIG. 3A is sucked by the suction hole 31 of the bump forming nozzle 30 and is positioned above the pad 2, and in FIG. The bump forming nozzle 30 is lowered while the bump forming body 20 (20a) is being sucked, and the bump forming body 20 (20a) is pressed against the pad 2 and pressed. Ultrasonic vibration is applied to the bump forming body 20 (20a) through the bump forming nozzle 30 while applying pressure. In FIG. 3 (c), the bump forming body 20 (20a) is plastically deformed into a convex shape by pressurization and ultrasonic vibration.
The soldering material 11 and the pad 2 are metal-to-metal bonded.

【0037】バンプ16の形成とパッド2との接合がで
きると図3(d)に示すようにバンプ形成ノズル30が上
昇しパッド2にバンプ16が形成される。この図3
(a)、図3(b)、図3(c)、図3(d)の工程を繰り返して半
導体素子1に複数のバンプ16を形成することができ
る。このようにアルミニウムまたはアルミニウムを主成
分とする金属材料10をはんだづけ材料11で覆った凸
型のバンプ16にはんだ阻止材12aを塗布または別途
形成したはんだ阻止材12aを装着して構成される。ま
た図1(d)は図2(b)半球体、図2(f)柱状体のバンプ形
成体20を用い同様に形成することができる。
When the formation of the bump 16 and the bonding of the pad 2 are completed, the bump forming nozzle 30 is raised as shown in FIG. 3D, and the bump 16 is formed on the pad 2. This figure 3
A plurality of bumps 16 can be formed on the semiconductor element 1 by repeating the steps of (a), (b), (c), and (d) of FIG. As described above, the solder bumper 12a is formed by coating the solder bumper 12a or mounting the solder stopper 12a separately formed on the convex bump 16 in which the metal material 10 mainly composed of aluminum or aluminum is covered with the soldering material 11. 1 (d) can be formed in the same manner by using a hemisphere in FIG. 2 (b) and a columnar bump forming body 20 in FIG. 2 (f).

【0038】なお図1(d)、(e)に示すようにバンプ1
6はバンプ形成体20が図2(i)球状体、図2(j)柱状体
のはんだづけ可能な金属である金、銀、銅、錫、ニッケ
ルのいずれかまたは少なくともいずれかの金属を主成分
とする合金材料だけで形成することもできる。
As shown in FIGS. 1D and 1E, the bump 1
Reference numeral 6 indicates that the bump-forming body 20 is composed mainly of at least one of gold, silver, copper, tin, and nickel, which are solderable metals of a spherical body and a columnar body of FIG. 2 (j). It can also be formed only with the alloy material described below.

【0039】このようにはんだ阻止材12aを別途設け
ることにより、第1、第2の実施形態のようにバンプ形
成ノズル30を用いたバンプ形成体20の変形を行うこ
となく、簡単にはんだ阻止部を設けることができる。ま
た種々の形状、大きさのはんだ阻止材12aを形成で
き、はんだ材料の量やバンプの形状、寸法(大きさ、高
さ)などに応じたはんだ阻止材12aを形成できる。
By separately providing the solder blocking member 12a in this manner, the solder blocking portion can be easily formed without deforming the bump forming body 20 using the bump forming nozzle 30 as in the first and second embodiments. Can be provided. In addition, the solder blocking material 12a having various shapes and sizes can be formed, and the solder blocking material 12a can be formed according to the amount of the solder material and the shape and size (size, height) of the bump.

【0040】(実施の形態4)図1(f)は本発明の第4
の実施形態におけるバンプ14を有する半導体素子1と
回路基板3による実装構造体の一部断面を示すものであ
る。
(Embodiment 4) FIG. 1 (f) shows a fourth embodiment of the present invention.
12 shows a partial cross section of a mounting structure formed by the semiconductor element 1 having the bumps 14 and the circuit board 3 in the embodiment.

【0041】複数のバンプ14が形成された半導体素子
1と回路基板3を接続材料としてクリームはんだ13を
用いて接続する。接続は回路基板3の端子電極4に所定
量のクリームはんだ13を塗布し、その上にバンプ14
を対面させて位置合わせした半導体素子1を設置し、加
熱して回路基板3と半導体素子1を接続して実装構造体
を形成することができる。
The semiconductor element 1 on which the plurality of bumps 14 are formed and the circuit board 3 are connected using cream solder 13 as a connection material. For connection, a predetermined amount of cream solder 13 is applied to the terminal electrodes 4 of the circuit board 3, and bumps 14
The semiconductor element 1 is positioned with the semiconductor elements 1 facing each other, and the semiconductor element 1 is heated and connected to the circuit board 3 and the semiconductor element 1 to form a mounting structure.

【0042】半導体素子1と回路基板3の接続について
図6を用いて工程を追って説明する。
The connection between the semiconductor element 1 and the circuit board 3 will be described step by step with reference to FIG.

【0043】本実施形態における半導体素子1は第1の
実施形態で説明した図1(a)に記載のものである。図
6(a)において回路基板3の端子電極4にクリームはん
だ13を定量塗布するが塗布方法は印刷機、塗布機など
を用いて行う。図6(b)においてクリームはんだ13が
塗布された回路基板3の上方に半導体素子1に形成され
たバンプ14を回路基板3の端子電極4と対面させて位
置決めする。図6(c)において半導体素子1のバンプ1
4がクリームはんだ13の中に入り端子電極4に接する
まで下降させ設置する。設置後、図6(d)においてクリ
ームはんだ13の溶融温度まで加熱して溶融させた後、
冷却、凝固させ、はんだ13aとして電気的、機械的に
接続をして実装構造体とすることができる。なおクリー
ムはんだ13を端子電極4に塗布する方法で説明したが
バンプ14にクリームはんだ13を付着させて端子電極
4に設置する方法もある。
The semiconductor device 1 according to the present embodiment is the one described in FIG. 1A described in the first embodiment. In FIG. 6A, a fixed amount of the cream solder 13 is applied to the terminal electrodes 4 of the circuit board 3 by using a printing machine, a coating machine, or the like. In FIG. 6B, the bumps 14 formed on the semiconductor element 1 are positioned above the circuit board 3 on which the cream solder 13 is applied so as to face the terminal electrodes 4 of the circuit board 3. In FIG. 6C, the bump 1 of the semiconductor element 1 is formed.
4 is lowered into the cream solder 13 until it comes into contact with the terminal electrode 4 and is installed. After installation, after heating to the melting temperature of the cream solder 13 in FIG.
After cooling and solidifying, the solder 13a can be electrically and mechanically connected to form a mounting structure. Although the method of applying the cream solder 13 to the terminal electrode 4 has been described, there is also a method of attaching the cream solder 13 to the bump 14 and installing the bump solder 14 on the terminal electrode 4.

【0044】溶融したクリームはんだ13は、はんだ濡
れ性によりはんだづけ材料11に沿って進行するが、は
んだ阻止帯12によりクリームはんだ13の半導体素子
1への進行が阻止され、半導体素子1の回路が損傷する
ことや、バンプが複数の場合には電気的短絡を生じるこ
とを防止し接続の品質、信頼性を向上させる。
The melted cream solder 13 proceeds along the soldering material 11 due to the solder wettability. However, the progress of the cream solder 13 to the semiconductor element 1 is prevented by the solder inhibition zone 12, and the circuit of the semiconductor element 1 is damaged. In addition, when there are a plurality of bumps, an electrical short circuit is prevented from occurring, and the quality and reliability of the connection are improved.

【0045】また図7(a)に示すようにクリームはんだ
13の塗布量をはんだ阻止帯12の範囲内にすることに
よりはんだ濡れ性による進行がはんだ阻止帯12で止め
られ半導体素子1に至ることはない。
As shown in FIG. 7A, by setting the amount of the cream solder 13 to be within the range of the solder inhibition zone 12, the progress due to the solder wettability is stopped by the solder inhibition zone 12 and reaches the semiconductor element 1. There is no.

【0046】(実施の形態5)図1(g)は本発明の第5
の実施形態におけるバンプ15を有する半導体素子1と
回路基板3による実装構造体の一部断面を示すものであ
る。
(Embodiment 5) FIG. 1 (g) shows a fifth embodiment of the present invention.
10 shows a partial cross section of a mounting structure including the semiconductor element 1 having the bumps 15 and the circuit board 3 according to the embodiment.

【0047】複数のバンプ15が形成された半導体素子
1と回路基板3を接続材料としてクリームはんだ13を
用いて接続する。接続は回路基板3の端子電極4に所定
量のクリームはんだ13を塗布し、その上にバンプ15
を対面させて位置合わせした半導体素子1を設置し、加
熱して回路基板3と半導体素子1を接続して実装構造体
を形成することができる。
The semiconductor element 1 on which the plurality of bumps 15 are formed and the circuit board 3 are connected using cream solder 13 as a connection material. For connection, a predetermined amount of cream solder 13 is applied to the terminal electrodes 4 of the circuit board 3, and bumps 15
The semiconductor element 1 is positioned with the semiconductor elements 1 facing each other, and the semiconductor element 1 is heated and connected to the circuit board 3 and the semiconductor element 1 to form a mounting structure.

【0048】半導体素子1と回路基板3の接続について
図6を用いて工程を追って説明するが図6のバンプ14
と本実施の形態におけるバンプ15を置き換えて説明を
する。
The connection between the semiconductor element 1 and the circuit board 3 will be described step by step with reference to FIG.
The description will be made with the bumps 15 in this embodiment replaced.

【0049】また本実施形態における半導体素子1は第
2の実施形態で説明した図1(b)に記載のものであ
る。
The semiconductor device 1 according to this embodiment is the same as that shown in FIG. 1B described in the second embodiment.

【0050】図6(a)において回路基板3の端子電極4
にクリームはんだ13を定量塗布するが塗布方法は印刷
機、塗布機などを用いて行う。
In FIG. 6A, the terminal electrodes 4 on the circuit board 3
The cream solder 13 is applied in a fixed amount, and the application method is performed using a printing machine, a coating machine, or the like.

【0051】図6(b)においてクリームはんだ13が塗
布された回路基板3の上方に半導体素子1に形成された
バンプ15を回路基板3の端子電極4と対面させて位置
決めし、図6(c)において半導体素子1のバンプ15が
クリームはんだ13の中に入り端子電極4に接するまで
下降させ設置する。設置後、図6(d)においてクリーム
はんだ13の溶融温度まで加熱して溶融させた後、冷
却、凝固させ、はんだ13aとして電気的、機械的に接
続をして実装構造体とすることができる。なおクリーム
はんだ13を端子電極4に塗布する方法で説明したがバ
ンプ15にクリームはんだ13を付着させて端子電極4
に設置する方法もある。
In FIG. 6B, the bump 15 formed on the semiconductor element 1 is positioned above the circuit board 3 on which the cream solder 13 has been applied so as to face the terminal electrode 4 of the circuit board 3, and is positioned as shown in FIG. 2), the bump 15 of the semiconductor element 1 is lowered and set until it enters the cream solder 13 and contacts the terminal electrode 4. After the installation, in FIG. 6D, the solder is heated to the melting temperature of the cream solder 13 to be melted, then cooled and solidified, and electrically and mechanically connected as the solder 13a to form a mounting structure. . The method of applying the cream solder 13 to the terminal electrode 4 has been described.
There is also a way to install.

【0052】溶融したクリームはんだ13は、はんだ濡
れ性によりはんだづけ材料11に沿って進行するが、は
んだ阻止帯12によりクリームはんだ13の半導体素子
1への進行が阻止され、半導体素子1の回路が損傷する
ことや、バンプが複数の場合には電気的短絡を生じるこ
とを防止し接続の品質、信頼性を向上させる。
The melted cream solder 13 travels along the soldering material 11 due to the solder wettability, but the solder blocking zone 12 prevents the cream solder 13 from progressing to the semiconductor element 1 and damages the circuit of the semiconductor element 1. In addition, when there are a plurality of bumps, an electrical short circuit is prevented from occurring, and the quality and reliability of the connection are improved.

【0053】また図7(a)に示すようにクリームはんだ
13の塗布量をはんだ阻止帯12の範囲内にすることに
よりはんだ濡れ性による進行が止められ半導体素子1に
至ることはない。
Further, as shown in FIG. 7A, when the amount of the cream solder 13 applied is within the range of the solder inhibition zone 12, the progress due to the solder wettability is stopped and the semiconductor element 1 does not reach.

【0054】(実施の形態6)図1(h)、図1(i)、図1
(j)は本発明の第6の実施形態におけるバンプ16を有
する半導体素子1と回路基板3による実装構造体の一部
断面を示すものである。
(Embodiment 6) FIGS. 1 (h), 1 (i), 1
(j) shows a partial cross section of a mounting structure including the semiconductor element 1 having the bumps 16 and the circuit board 3 according to the sixth embodiment of the present invention.

【0055】複数のバンプ16が形成された半導体素子
1と回路基板3を接続材料としてクリームはんだ13を
用いて接続する。接続は端子電極4に所定量のクリーム
はんだ13を塗布し、その上にバンプ16を対面させて
位置合わせした半導体素子1を設置し、加熱して回路基
板3と半導体素子1を接続して実装構造体を形成するこ
とができる。
The semiconductor element 1 on which the plurality of bumps 16 are formed and the circuit board 3 are connected using cream solder 13 as a connection material. For connection, a predetermined amount of cream solder 13 is applied to the terminal electrode 4, the semiconductor element 1 is positioned on the terminal electrode 4 with the bumps 16 facing each other, and the semiconductor element 1 is heated to connect the circuit board 3 and the semiconductor element 1. A structure can be formed.

【0056】半導体素子1と回路基板3の接続について
図6を用いて工程を追って説明するが図6のバンプ14
と本実施の形態におけるバンプ16を置き換えて説明を
する。
The connection between the semiconductor element 1 and the circuit board 3 will be described step by step with reference to FIG.
The description will be made with the bumps 16 in this embodiment replaced.

【0057】本実施形態における半導体素子1は第3の
実施形態で説明した図1(c)〜(e)に記載のものであ
る。図6(a)において回路基板3の端子電極4にクリー
ムはんだ13を定量塗布するが塗布方法は印刷機、塗布
機などを用いて行う。塗布量ははんだ阻止材料12aの
範囲内もしくははんだ阻止材12aまでになるようにす
る。
The semiconductor device 1 in this embodiment is the one described in FIGS. 1C to 1E described in the third embodiment. In FIG. 6A, a fixed amount of the cream solder 13 is applied to the terminal electrodes 4 of the circuit board 3 by using a printing machine, a coating machine, or the like. The application amount is set within the range of the solder blocking material 12a or up to the solder blocking material 12a.

【0058】図6(b)においてクリームはんだ13が塗
布された回路基板3の上方に半導体素子1に形成された
バンプ16を回路基板3の端子電極4と対面させて位置
決めし、図6(c)において半導体素子1のバンプ16が
クリームはんだ13の中に入り端子電極4に接するまで
下降させ設置する。設置後図6(d)においてクリームは
んだ13の溶融温度まで加熱して溶融させた後、冷却、
凝固させ、はんだ13aとして電気的、機械的に接続を
して実装構造体とすることができる。なおクリームはん
だ13を端子電極4に塗布する方法で説明したがバンプ
16にクリームはんだ13を付着させて端子電極4に設
置する方法もある。
In FIG. 6B, the bumps 16 formed on the semiconductor element 1 are positioned above the circuit board 3 on which the cream solder 13 has been applied so as to face the terminal electrodes 4 of the circuit board 3. 4), the bumps 16 of the semiconductor element 1 are lowered and set until they enter the cream solder 13 and come into contact with the terminal electrodes 4. After installation, in FIG. 6 (d), the solder is heated to the melting temperature of the cream solder 13 and melted.
After solidification, the solder 13a can be electrically and mechanically connected to form a mounting structure. Although the method of applying the cream solder 13 to the terminal electrode 4 has been described, there is also a method of attaching the cream solder 13 to the bump 16 and installing the bump solder 16 on the terminal electrode 4.

【0059】溶融したクリームはんだ13は、はんだ濡
れ性によりはんだづけ材料11に沿って進行するが、図
7(b)に示すようにクリームはんだ13の塗布量をはん
だ阻止材12a上またははんだ阻止材12aとバンプ16
の凸型の先端との範囲内にすることによりはんだ濡れ性
による進行が止められ半導体素子1に至ることはない。
The melted solder 13 proceeds along the soldering material 11 due to the wettability of the solder. As shown in FIG. 7B, the amount of the applied solder cream 13 is reduced on the solder stopper 12a or on the solder stopper 12a. And bump 16
The protrusion due to the solder wettability is stopped and the semiconductor element 1 is not reached.

【0060】(実施の形態7)本発明のバンプ形成体2
0について図2を用いて説明をする。バンプ形成体20
はアルミニウムまたはアルミニウムを主成分とする金属
材料10とはんだづけ材料11で構成されている。はん
だづけ材料11は金、銀、銅、錫、ニッケルを用いアル
ミニウムまたはアルミニウムを主成分とする金属材料1
0に、ニッケルを下地とするニッケル−金、ニッケル−
銀、ニッケル−銅、ニッケル−錫のメッキを行いバンプ
形成体20とする。なお乾式メッキのスパッタリング
法、真空蒸着法による場合は金、銀、銅、錫のいずれか
1種類だけのこともある。
(Embodiment 7) Bump formed body 2 of the present invention
0 will be described with reference to FIG. Bump formed body 20
Is composed of aluminum or a metal material 10 containing aluminum as a main component and a soldering material 11. The soldering material 11 is made of gold, silver, copper, tin, nickel, aluminum or aluminum-based metal material 1
0, nickel-gold, nickel-
Plating of silver, nickel-copper, and nickel-tin is performed to form a bump formed body 20. When a dry plating sputtering method or a vacuum deposition method is used, only one of gold, silver, copper, and tin may be used.

【0061】はんだづけ材料11の被覆はアルミニウム
またはアルミニウムを主成分とする金属材料10に全面
被覆された図2(a)、(e)、バンプへの接合部21の一面
を除いて被覆された図2(b)、(f)、片面または球状体の
一部分を被覆された図2(c)、(g)、両面に被覆された図
2(d)、(h)に分けられるが、全面被覆された図2(a)、
(e)以外は部分的にはんだづけ材料11を被覆するか、
全面被覆後部分的に除去して形成するかは任意である。
図2(c)、(d)、(g)、(h)はバンプ形成後溶融はんだの進
行を止めるはんだ阻止帯を形成するはんだ阻止帯形成部
22を有しているためバンプ形成時にはんだ阻止帯12
を再度形成する必要はない。すなわちはんだ阻止帯12
を形成するためにわざわざ変形動作をすることなく、そ
のままの状態で接合することが可能となる。また形状に
ついては図2(a)、(c)の球状体、図2(b)の半球状体、
図2(e)、(f)、(g)、(h)の柱状体、図2(d)の太鼓状体
に分類することができる。
FIGS. 2 (a) and 2 (e) show a case where the soldering material 11 is entirely covered with aluminum or the metal material 10 containing aluminum as a main component, except for one surface of the joint 21 to the bump. 2 (b), (f), FIGS. 2 (c) and (g) coated on one side or a part of a sphere, and FIGS. 2 (d) and (h) coated on both sides Figure 2 (a),
Except for (e), the soldering material 11 is partially covered,
It is optional to form the layer by partially removing it after covering the entire surface.
2 (c), (d), (g) and (h) show a solder stop band forming portion 22 for forming a solder stop band for stopping the progress of the molten solder after the bump is formed. Obi 12
Need not be formed again. That is, the solder stop zone 12
Can be joined as they are without performing any deforming operation. As for the shape, the spherical body of FIGS. 2 (a) and 2 (c), the hemispherical body of FIG. 2 (b),
2 (e), 2 (f), 2 (g) and 2 (h), and a drum-shaped body shown in FIG. 2 (d).

【0062】なおバンプ形成にパッド2との接合をはん
だづけ材料11を用いて行う図2(a)、(d)、(e)、(h)の
バンプ形成体20についてはアルミニウムまたはアルミ
ニウムを主体とする金属材料10の代わりに導電性樹脂
のように導電性は有するがはんだのつかない材料を用い
ることもできる。またはんだ阻止材12aを用いる場合
には図2(i)、図2(j)のような球状体、柱状体のはんだ
づけ材料11のみで形成されたバンプ形成体20を用い
ることもできる。
The bumps 20 shown in FIGS. 2A, 2D, 2E, and 2H in which the bumps are formed with the pads 2 using the soldering material 11 are mainly made of aluminum or aluminum. Instead of the metal material 10 to be formed, a material having conductivity but not to be soldered, such as a conductive resin, can be used. When the solder blocking material 12a is used, a bump-formed body 20 made of only the soldering material 11 of a spherical body and a columnar body as shown in FIGS. 2 (i) and 2 (j) can be used.

【0063】(実施の形態8)図8に示すのははんだ阻
止帯形成部22を有するバンプ形成体20(20c,2
0d,20g,20h)を用いた実装構造体の一部断面図
である。アルミニウムまたはアルミニウムを主成分とす
る金属材料10とはんだづけ材料11で構成され、アル
ミニウムまたはアルミニウムを主成分とする金属材料1
0により形成されるはんだ阻止帯形成部22を有するバ
ンプ形成体20を用いて形成される実装構造体であり、
いずれもバンプ形成はバンプ形成ノズルを用い加圧と超
音波振動により半導体素子1のパッド2と接合される。
また回路基板3の端子電極4とはクリームはんだで電気
的、機械的に接続されて実装構造体を形成するものであ
る。この実装構造体について図8の実装構造体の断面図
を用いて説明をする。
(Embodiment 8) FIG. 8 shows a bump forming body 20 (20c, 2c) having a solder stopping band forming portion 22.
0d, 20g, 20h) is a partial cross-sectional view of the mounting structure. Aluminum or metal material 1 composed of aluminum or aluminum as a main component and soldering material 11 and composed of aluminum or aluminum as a main component
0 is a mounting structure formed using a bump forming body 20 having a solder stop band forming portion 22 formed by
In any case, the bumps are bonded to the pads 2 of the semiconductor element 1 by applying pressure and ultrasonic vibration using a bump forming nozzle.
The terminal electrodes 4 of the circuit board 3 are electrically and mechanically connected by cream solder to form a mounting structure. This mounting structure will be described with reference to the cross-sectional view of the mounting structure in FIG.

【0064】図8(a)はバンプ形成体20(20c)とし
て図2(c)の球状体のアルミニウムまたはアルミニウム
を主成分とする金属材料10に半円状にはんだづけ材料
11が被覆されたものでパッドへの接合部21とはんだ
阻止帯形成部22とは連続して形成されている。パッド
2への接合は、パッド2とアルミニウムまたはアルミニ
ウムを主成分とする金属材料10とが接合されるときに
はんだ阻止帯形成部22のアルミニウムまたはアルミニ
ウムを主成分とする金属材料を残して接合され回路基板
3の端子電極4とクリームはんだ13により接続すると
きに、はんだ阻止帯形成部22により溶けたはんだの進
行をとめて形成される実装構造体である。図8(b)は図
2(g)の柱状体で片面にはんだづけ材料11を有するバ
ンプ形成体20(20g)を用いるものであり、パッド
への接合部21とはんだ阻止帯形成部22は角を介して
連続して形成されている。パッド2とはパッドへの接合
部21で接合され側面のはんだ阻止帯形成部22により
溶けたクリームはんだ13の進行を止めて形成される実
装構造体である。図8(c)は図2(h)の柱状体で上下両面
にはんだづけ材料11、側面にはんだ阻止帯形成部22
を有する構成で、バンプ形成体20(20d)はパッド
2とはんだづけ材料11が接合されて側面のはんだ阻止
帯形成部22により溶けたクリームはんだ13の進行を
止めて形成される実装構造体である。図8(d)は図2(d)
の太鼓状で上下にはんだづけ材料11と側面にはんだ阻
止帯形成部22を有したバンプ形成体20(20h)を
用いるもので回路基板3との接続時にははんだ阻止帯形
成部22でクリームはんだ13の進行を止めて端子電極
4と接続されて実装構造体が形成されるものである。
FIG. 8A shows a bump-formed body 20 (20c) obtained by coating the spherical aluminum or the metal material 10 containing aluminum as the main component of FIG. 2C with a soldering material 11 in a semicircular shape. Thus, the bonding portion 21 to the pad and the solder inhibition band forming portion 22 are formed continuously. Bonding to the pad 2 is performed when the pad 2 is bonded to aluminum or the metal material 10 containing aluminum as a main component while leaving the metal material containing aluminum or aluminum as the main component of the solder stop band forming portion 22. When connected to the terminal electrode 4 of the circuit board 3 by the cream solder 13, the mounting structure is formed by stopping the progress of the solder melted by the solder inhibition band forming portion 22. FIG. 8 (b) shows a columnar body of FIG. 2 (g) using a bump forming body 20 (20g) having a soldering material 11 on one side. Are formed continuously through the substrate. The pad 2 is a mounting structure that is formed by stopping the progress of the cream solder 13 that has been joined at the joining portion 21 to the pad and that has been melted by the solder inhibition band forming portion 22 on the side surface. FIG. 8 (c) shows the columnar body of FIG. 2 (h), the soldering material 11 on both the upper and lower surfaces, and the solder stop band forming portions 22 on the side surfaces.
The bump forming body 20 (20d) is a mounting structure formed by joining the pad 2 and the soldering material 11 and stopping the progress of the cream solder 13 melted by the solder stop band forming portion 22 on the side surface. . FIG. 8 (d) shows FIG. 2 (d).
A bump forming body 20 (20h) having a drum-shaped upper and lower soldering material 11 and a solder stopping band forming portion 22 on the side surface is used. When connecting to the circuit board 3, the solder stopping band forming portion 22 applies the cream solder 13. The progress is stopped and the mounting structure is formed by being connected to the terminal electrode 4.

【0065】[0065]

【発明の効果】以上のように本発明は、バンプ形成体を
アルミニウムまたはアルミニウムを主成分とする金属材
料または導電性樹脂にはんだづけ材料を被覆したバンプ
形成体を用いバンプ形成時にはんだ阻止帯を形成するバ
ンプ形成方法と、バンプ形成後はんだづけ材料ではんだ
阻止材を塗布または装着する方法を発明することによ
り、半導体と回路基板のはんだづけによる接続を可能に
し、安価に作業性、品質、信頼性のよい実装構造体の製
造を行うことができる。
As described above, according to the present invention, a solder-blocking zone is formed at the time of bump formation by using a bump-formed body obtained by coating a bump-formed body with aluminum or a metal material containing aluminum as a main component or a conductive resin with a soldering material. By inventing a method of forming a bump and a method of applying or mounting a solder blocking material with a soldering material after the formation of a bump, it is possible to connect a semiconductor and a circuit board by soldering, and it is inexpensive and has good workability, quality, and reliability. The mounting structure can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)本発明の第1実施の形態による半導体と
バンプの実装構造体の断面図 (b)本発明の第2実施の形態による半導体とバンプの
実装構造体の断面図 (c)本発明の第3実施の形態による半導体とバンプの
実装構造体の断面図 (d)本発明の第3実施の形態による半導体とバンプの
実装構造体の断面図 (e)本発明の第3実施の形態による半導体と回路基板
の実装構造体の断面図 (f)本発明の第4実施の形態による半導体と回路基板
の実装構造体の断面図 (g)本発明の第5実施の形態による半導体と回路基板
の実装構造体の断面図 (h)本発明の第6実施の形態による半導体と回路基板
の実装構造体の断面図 (i)本発明の第6実施の形態による半導体と回路基板
の実装構造体の断面図 (j)本発明の第6実施の形態による半導体と回路基板
の実装構造体の断面図
FIG. 1A is a cross-sectional view of a semiconductor and bump mounting structure according to a first embodiment of the present invention. FIG. 1B is a cross-sectional view of a semiconductor and bump mounting structure according to a second embodiment of the present invention. (3) Cross-sectional view of a semiconductor-and-bump mounting structure according to the third embodiment of the present invention. (D) Cross-sectional view of a semiconductor-and-bump mounting structure according to the third embodiment of the present invention. Sectional view of the mounting structure of the semiconductor and the circuit board according to the embodiment (f) Sectional view of the mounting structure of the semiconductor and the circuit board according to the fourth embodiment of the present invention (g) According to the fifth embodiment of the present invention Sectional view of a semiconductor and circuit board mounting structure (h) Sectional view of a semiconductor and circuit board mounting structure according to a sixth embodiment of the present invention (i) Semiconductor and circuit board according to a sixth embodiment of the present invention (J) In the sixth embodiment of the present invention, Sectional view of the mounting structure of the semiconductor and the circuit board that

【図2】本発明の第7実施の形態によるバンプ形成体の
断面図
FIG. 2 is a sectional view of a bump formed body according to a seventh embodiment of the present invention;

【図3】本発明の第1実施の形態によるバンプ形成工程
の断面図
FIG. 3 is a sectional view of a bump forming step according to the first embodiment of the present invention;

【図4】本発明の第2実施の形態によるバンプ形成工程
の断面図
FIG. 4 is a sectional view of a bump forming step according to a second embodiment of the present invention;

【図5】本発明の第1〜4実施形態による他の実施形態
であるバンプの多角形状体の断面図
FIG. 5 is a sectional view of a polygonal body of a bump according to another embodiment of the first to fourth embodiments of the present invention;

【図6】本発明の半導体と回路基板のクリームはんだに
よる接続工程図
FIG. 6 is a connection process diagram of a semiconductor and a circuit board of the present invention using cream solder.

【図7】本発明の実施の形態によるクリームはんだの溶
融前、溶融後の形態を示す実装構造体の断面図
FIG. 7 is a cross-sectional view of a mounting structure showing a form before and after melting of a cream solder according to an embodiment of the present invention.

【図8】本発明の第9実施の形態によるはんだ阻止帯形
成部を有するバンプ形成体を用いた実装構造体の断面図
FIG. 8 is a cross-sectional view of a mounting structure using a bump forming body having a solder stop zone forming part according to a ninth embodiment of the present invention.

【図9】従来の実装構造体の断面図FIG. 9 is a cross-sectional view of a conventional mounting structure.

【符号の説明】[Explanation of symbols]

1 半導体素子(電子部品) 2 パッド 3 回路基板 4 端子電極 5 金バンプ 6 導電性接着剤 10 アルミニウムまたはアルミニウムを主成分とする
金属材料 10a 底辺 10b 頂点 10c 側面 11 はんだづけ材料 12 はんだ阻止帯 12a はんだ阻止材 13 クリームはんだ 13a はんだ 14,15,16 バンプ 20(a),20(c),20(i) 球状体バンプ形成
体 20(b),20(e),20(f),20(g),20
(h),20(j) 柱状体バンプ形成体 20(d) 太鼓状体バンプ形成体 21 パッドへの接合部 22 はんだ阻止帯形成部 30 バンプ形成ノズル 31 吸着穴 32 角部 33 バンプ形成部
DESCRIPTION OF SYMBOLS 1 Semiconductor element (electronic component) 2 Pad 3 Circuit board 4 Terminal electrode 5 Gold bump 6 Conductive adhesive 10 Aluminum or aluminum-based metal material 10a Bottom 10b Vertex 10c Side surface 11 Soldering material 12 Solder prevention zone 12a Solder prevention Material 13 Cream solder 13a Solder 14, 15, 16 Bump 20 (a), 20 (c), 20 (i) Spherical bump formed body 20 (b), 20 (e), 20 (f), 20 (g) , 20
(H), 20 (j) Column-shaped bump forming body 20 (d) Drum-shaped bump forming body 21 Bonding part to pad 22 Solder stop band forming part 30 Bump forming nozzle 31 Suction hole 32 Corner part 33 Bump forming part

Claims (13)

【特許請求の範囲】[Claims] 【請求項1】 表面にパッドが形成された電子部品の、
前記パッド上に表面にはんだづけ領域とはんだ阻止帯と
を備えたバンプを形成したことを特徴とする実装構造
体。
An electronic component having a pad formed on a surface thereof.
A mounting structure, wherein a bump having a soldering region and a solder stop zone on the surface is formed on the pad.
【請求項2】 表面にパッドが形成された電子部品の、
前記パッド上に表面がはんだ付け材料で被覆されたバン
プが形成されその被覆上にはんだ阻止材を塗布または装
着してはんだ阻止帯としたことを特徴とする実装構造
体。
2. An electronic component having a pad formed on a surface thereof.
A mounting structure, wherein a bump having a surface coated with a soldering material is formed on the pad, and a solder blocking material is applied or mounted on the coating to form a solder blocking band.
【請求項3】 表面にパッドが形成された電子部品と、
表面に端子電極が形成された回路基板とを備え、前記電
子部品と前記回路基板とが表面にはんだづけ領域とはん
だ阻止帯とを備えたバンプを介して電気的に接続された
ことを特徴とする実装構造体。
3. An electronic component having a pad formed on a surface thereof.
A circuit board having a terminal electrode formed on a surface thereof, wherein the electronic component and the circuit board are electrically connected to each other via a bump having a soldering region and a solder stop zone on the surface. Mounting structure.
【請求項4】 電子部品が半導体素子である請求項1ま
たは3記載の実装構造体。
4. The mounting structure according to claim 1, wherein the electronic component is a semiconductor element.
【請求項5】 バンプがアルミニウムまたはアルミニウ
ムを主成分とする金属材料からなる請求項1から4のい
ずれかに記載の実装構造体。
5. The mounting structure according to claim 1, wherein the bump is made of aluminum or a metal material containing aluminum as a main component.
【請求項6】 バンプが導電性樹脂にはんだ付け材料を
被覆して形成されたことを特徴とする請求項1から4の
いずれかに記載の実装構造体。
6. The mounting structure according to claim 1, wherein the bump is formed by coating a conductive resin with a soldering material.
【請求項7】 バンプが球状体、柱状体、多角形状体の
うちいずれかの形状を備えることを特徴とする請求項1
から4のいずれかに記載の実装構造体。
7. The bump according to claim 1, wherein the bump has one of a spherical body, a columnar body, and a polygonal body.
5. The mounting structure according to any one of items 1 to 4.
【請求項8】 はんだづけ材料が金、銀、銅、錫、ニッ
ケルのうち,少なくともいずれかの金属材料または少な
くともいずれかの金属材料を主成分とする合金材料から
なる請求項1から4記載のいずれかに記載の実装構造
体。
8. The method according to claim 1, wherein the soldering material comprises at least one of gold, silver, copper, tin, and nickel, or an alloy material containing at least one of the metal materials as a main component. The mounting structure described in the crab.
【請求項9】 電子部品上のパッドと回路基板上の端子
電極とを電気的に接続するバンプがはんだづけ材料で被
覆された領域外にはんだ阻止帯を備えたことを特徴とす
る請求項1から4のいずれかに記載の実装構造体。
9. The method according to claim 1, wherein a bump for electrically connecting a pad on the electronic component and a terminal electrode on the circuit board is provided with a solder stop band outside a region covered with a soldering material. 5. The mounting structure according to any one of 4.
【請求項10】 バンプが球状体、半球状体、太鼓状
体、柱状体のうちいずれかのバンプ形成体を用いて形成
されることを特徴とする請求項1から4記載の実装構造
体。
10. The mounting structure according to claim 1, wherein the bump is formed by using any one of a spherical body, a hemispherical body, a drum-shaped body, and a columnar body.
【請求項11】 アルミニウムまたはアルミニウムを主
成分とする金属材料の少なくとも一部分にはんだづけ材
料を被覆したバンプ形成体をバンプ形成ノズルで吸着し
て電子部品のパッドに位置合わせする工程と、前記バン
プ形成体を吸着したまま前記バンプ形成ノズルを下降さ
せて前記バンプ形成体を前記電子部品のパッド上に押し
つけながら超音波振動を加えることにより、はんだづけ
材料の一部を剥離してはんだ阻止帯を形成すると同時
に、前記パッドとの接続を行う工程とを備えたことを特
徴とする実装方法。
11. A step of adsorbing a bump-formed body in which at least a part of aluminum or a metal material containing aluminum as a main component is coated with a soldering material with a bump-forming nozzle to align the bump-formed body with a pad of an electronic component; By lowering the bump forming nozzle while sucking and applying ultrasonic vibration while pressing the bump formed body on the pad of the electronic component, a part of the soldering material is peeled off to form a solder stop zone, And a step of connecting to the pad.
【請求項12】 バンプ形成体とパッドとが前記バンプ
形成体のはんだづけ材料で被覆されていない部分を用い
て接続されることを特徴とする請求項11記載の実装方
法。
12. The mounting method according to claim 11, wherein the bump forming body and the pad are connected by using a portion of the bump forming body that is not covered with a soldering material.
【請求項13】 バンプ形成体とパッドとが前記バンプ
形成体のはんだづけ材料で被覆された部分を用いて接続
されることを特徴とする請求項11記載の実装方法。
13. The mounting method according to claim 11, wherein the bump forming body and the pad are connected by using a portion of the bump forming body covered with a soldering material.
JP2001160282A 2001-05-29 2001-05-29 Mounting structure and mounting method thereof Expired - Fee Related JP4483131B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
JP2001160282A JP4483131B2 (en) 2001-05-29 2001-05-29 Mounting structure and mounting method thereof

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JP2002353265A true JP2002353265A (en) 2002-12-06
JP4483131B2 JP4483131B2 (en) 2010-06-16

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Country Status (1)

Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7709293B2 (en) 2007-03-02 2010-05-04 Fujitsu Limited Semiconductor device and manufacturing method of the semiconductor device
CN103299410A (en) * 2011-01-26 2013-09-11 株式会社村田制作所 Electronic component module and electronic component element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7709293B2 (en) 2007-03-02 2010-05-04 Fujitsu Limited Semiconductor device and manufacturing method of the semiconductor device
KR100958857B1 (en) * 2007-03-02 2010-05-20 후지쯔 가부시끼가이샤 Semiconductor device and manufacturing method of the semiconductor device
US7956468B2 (en) 2007-03-02 2011-06-07 Fujitsu Limited Semiconductor device
CN103299410A (en) * 2011-01-26 2013-09-11 株式会社村田制作所 Electronic component module and electronic component element

Also Published As

Publication number Publication date
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