JP2002340667A - Instrument for measuring illuminance, and exposure device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To measure information as to illuminance while saving space, without increasing the cost. SOLUTION: An emitted beam is received to measure the information about the illuminance of the beam. This instrument is provided with a photoreceiver 21 for photoreceiving the beam, a specifying device 23 for specifying a photoreceiving area for the beam emitted to the photoreceiver 21 in plural ranges, and a switching device for driving the specifying device 23 to switch the range of the photoreceiving area.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an illuminance measuring device for measuring information on illuminance of a light beam, and an exposure device for exposing a pattern of a mask illuminated by the light beam on a substrate.
In particular, the present invention relates to an illuminance measurement device suitable for measuring irradiation unevenness and irradiation amount of a light beam.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a micro device such as a semiconductor device, a liquid crystal display device, an image pickup device (CCD or the like), and a thin film magnetic head, for example, a step-and-repeat type projection exposure apparatus (stepper) is used. ) Or a step-and-scan projection scanning exposure apparatus (scanning stepper) to transfer a mask pattern onto a substrate (semiconductor wafer, glass substrate, ceramic wafer) via a projection optical system. ing. In this type of exposure apparatus, a reticle as a mask is illuminated under exposure light (light flux) from an illumination optical system, and a pattern image of the illuminated reticle is projected onto a substrate via a projection optical system. A photosensitive agent such as a resist applied thereon is exposed.

When the illuminance becomes non-uniform, the exposure light used in the exposure apparatus causes a problem that the amount of light to the resist varies depending on the irradiation location and causes a problem that the pattern transfer is not performed in a predetermined manner. It is desirable that As a specific example, in the case of a positive pattern, it is generally known that a large amount of resist remains at a place where the exposure amount is insufficient, and a small amount of the resist remains at a place where the exposure amount is excessive.

[0004] This phenomenon is called illumination unevenness, and a mechanism for minimizing this phenomenon is provided in the exposure apparatus. For example, a sensor (so-called unevenness sensor) that measures illuminance at a pinpoint as an illuminance measuring device is provided on a substrate stage that holds and moves a substrate, and measures illuminance at a plurality of points within an irradiation range, thereby providing an illumination optical system. The apparatus can be calibrated by obtaining the unevenness of the irradiation amount.

On the other hand, in the above exposure apparatus, a sensor (so-called irradiation amount monitor) for measuring the amount of exposure light transmitted from a reticle is provided on a substrate stage as an illuminance measuring device, separately from a sensor for measuring illumination unevenness. I have. This sensor is
When the reticle is illuminated with a predetermined amount of exposure light, the amount of light reaching the substrate via the projection optical system after being blocked by the reticle pattern is measured. It is possible to predict the influence of heat generation and the like, and to obtain a correction parameter relating to the imaging characteristics of the projection optical system, such as a magnification, based on the predicted result.

[0006]

However, the conventional illuminance measuring apparatus and the exposure apparatus as described above have the following problems. The non-uniformity sensor requires pinpoint measurement, so the optical aperture must be as small as possible for the sensor.However, the dose monitor needs to cover the entire exposure light irradiation range. Requires the largest possible opening. in this way,
Although both measure the amount of exposure light similarly,
Since the characteristics to be measured are different, a plurality of sensors have to be installed, which has contributed to an increase in cost and an increase in the size of the apparatus.

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above points, and provides an illuminance measurement apparatus and an exposure apparatus which can measure information on illuminance such as illumination unevenness and irradiation amount in a small space without increasing the cost. The purpose is to provide.

[0008]

In order to achieve the above object, the present invention employs the following structure corresponding to FIGS. 1 to 9 showing an embodiment. An illuminance measurement device according to the present invention is an illuminance measurement device (20) that receives an irradiated light beam (B) and measures information on the illuminance of the light beam (B), and a light receiving device (20) that receives the light beam (B). 21), a regulating device (23) for regulating the light receiving range of the light beam (B) applied to the light receiving device (21) to a plurality of sizes, and a regulating device (2).
And 3) a switching device (C) for driving 3) to switch the size of the light receiving range.

Therefore, in the illuminance measuring device of the present invention, when measuring the illumination unevenness, the switching device (C) is provided by the switching device (C).
By driving 3), the light receiving range of the light beam (B) applied to the light receiving device (21) can be defined to the size of the pinpoint, and when measuring the irradiation amount, the light receiving device (21) is used.
The light receiving range of the light beam (B) applied to the light source can be enlarged. Therefore, even if the features to be measured are different, it is not necessary to install a plurality of illuminance measurement devices, and it is possible to prevent an increase in cost and an increase in size of the devices.

The exposure apparatus according to the present invention is also directed to an exposure apparatus (E) for exposing a pattern of a mask (R) illuminated by a light beam (B) onto an exposure area of a substrate (P). The device for measuring the information on the illuminance of (1) is the illuminance measuring device (20) according to any one of claims 1 to 5.

Therefore, in the exposure apparatus of the present invention, information on illuminance such as illumination unevenness and irradiation amount in the exposure area of the substrate (P) can be measured by one illuminance measurement apparatus (20). ) Can be prevented from increasing in cost and increasing in size.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of an illuminance measuring device and an exposure device according to the present invention will be described below with reference to FIGS. Here, a reticle on which a circuit pattern of a liquid crystal display device is formed is used.
A description will be given using an example in which the above-described circuit pattern is exposed on a glass substrate by an exposure apparatus of an AND repeat system.

FIG. 1 is a schematic configuration diagram of an exposure apparatus E according to the present invention. As shown in this figure, illumination light (light flux) B emitted from an exposure light source 1 such as an ultra-high pressure mercury lamp is condensed by an elliptical mirror 2, reflected by a reflection mirror 3, and travels to a shutter 4. By controlling ON / OFF (opening / closing) of the shutter 4, ON / OFF (shielding, cancellation of shielding) of the illumination light B is controlled. The illumination light B that has passed through the shutter 4 is
By transmitting the light through the interference filter 6 through the relay lens 5, light other than the wavelengths (g-line, h-line, and i-line) required for exposure is removed. The illumination light B is incident on the fly-eye lens 7 in a state of being substantially parallel light via a relay lens, and is converted into a light flux having a uniform illuminance distribution.

Illumination light B transmitted through fly-eye lens 7
After transmitting through the relay lens 8, a part of the light is reflected by the beam splitter 9 and is incident on an integrator sensor 10 composed of a detector. Integrator sensor 10
Is for detecting the illuminance of the incident illumination light B,
The detection signal is output to the control device C. On the other hand, the illumination light B transmitted through the beam splitter 9 is adjusted to an irradiation range according to the size of the opening of the variable field stop 12 after passing through the relay lens 11, and the relay lens 13, the reflection mirror 14,
A reticle (mask) R held on a reticle stage (not shown) is illuminated via a relay lens 15. The image of the pattern formed on the reticle R and illuminated with the illumination light B is
The image is transferred to a glass substrate (substrate) P via the projection optical system PL. The shutter 4 to the relay lens 15 form an illumination optical system.

The glass substrate P is held on a substrate stage 19 that is driven orthogonally in the X and Y directions, and is configured to repeat transfer (exposure) at a predetermined position driven by the substrate stage 19. . On the substrate stage 19, movable mirrors (not shown) having a length longer than the movable range of the substrate stage 19 are provided along the Y direction and the X direction, respectively. Then, a laser interferometer (not shown) is arranged to face each movable mirror, and the substrate stage 1
The movement distance and position (and thus the position of the glass substrate P) in the horizontal plane of No. 9 are as follows. The laser light emitted from the laser interferometer is reflected by the moving mirror and is incident on the laser interferometer. The measurement is made accurately based on the interference with The measured position information of the substrate stage 19 is output to the control device C.

On the substrate stage 19, a function of monitoring the irradiation amount (exposure amount) of the illumination light B transmitted through the reticle R, and illumination unevenness (exposure amount unevenness) of the irradiation area of the illumination light B
Is provided with an irradiation amount monitor (illuminance measuring device) 20 with a variable aperture, which also has a function of measuring the irradiance. FIG. 2 shows a schematic configuration diagram of the dose monitor 20 with a variable aperture.

As shown in FIG.
Is installed on the substrate stage 19, receives the irradiated illumination light B, and outputs a light-receiving signal to the control device C. The detector (light-receiving device) 21 extends in one direction (for example, the Y direction) indicated by an arrow. The linear guide 22 reciprocates along the guide member 18, an actuator (not shown) that drives the linear guide 22 under the control of the control device C, and is attached to the linear guide 22 and moves integrally with the linear guide 22. And a light shielding plate (defining device) 23. An air cylinder, a motor, or the like can be used as the actuator. The control device C constitutes a switching device for switching the size of the light receiving range of the detector 21.

The light shielding plate 23 is arranged along the XY plane on the light source side (+ Z side) of the detector 21, and the position where the linear guide 22 is moved to block the optical path of the illumination light B with respect to the detector 21 and the position where it is opened. And are positioned.
A stop 23a having a pinhole size is formed in the light shielding plate 23 at a position corresponding to substantially the center of the detector 21 when positioned at a position where the optical path of the illumination light B is shielded.

The control device C controls the substrate stage 19 based on the measurement result of the laser interferometer and the exposure data (recipe).
(That is, the movement of the glass substrate P),
Based on the measurement result of the irradiation amount monitor 20, the projection optical system PL
By controlling an adjustment mechanism (not shown) attached to the projection optical system PL, for example, by adjusting the gas pressure between the optical elements of the projection optical system PL or by adjusting the distance between the optical elements. Is adjusted. Further, the control device C controls an adjustment mechanism (not shown) attached to the illumination optical system based on the measurement result of the irradiation amount monitor 20 to control the illumination unevenness of the illumination light B irradiated on the substrate stage 19. Is suppressed.

The operation of measuring the irradiation amount of the illumination light B and the illumination unevenness (illumination distribution characteristics) on the substrate stage 19 using the irradiation amount monitor 20 having the above configuration will be described below.

First, when measuring the irradiation amount of the illumination light B, the control device C moves the substrate stage 19 so that the detector 21 is located in the illumination area of the illumination light B immediately below the projection optical system PL, and also controls the actuator. The light guide plate 23 is positioned at a position shown in FIG. 2 in which the optical path of the illumination light B is not blocked (opened) by driving the linear guide 22 through. Then, the reticle R is illuminated with the illumination light B while the reticle R is held on the reticle stage. Thus, as shown in FIG. 3A, the illumination light B is applied to almost the entire surface of the detector 21. In other words, the size of the illumination light receiving range for the detector 21 is set to the maximum.

Then, the detector 21 receives the irradiation amount (illuminance) of the illumination light B irradiated with an amount of light corresponding to the amount (density) of the pattern formed on the reticle R. The controller C predicts the amount of light when the illumination light B passes through the projection optical system PL based on the light reception signal output from the detector 21, and adjusts the imaging characteristics of the projection optical system PL according to the prediction result. I do. Further, the control device C irradiates the glass substrate P based on the detection result of the integrator sensor 10 during the exposure process by obtaining the correlation between the light receiving signal of the detector 21 and the detection signal of the integrator sensor 10 at this time. It is also possible to obtain a correction parameter for adjusting the illuminance of the illumination light B to be emitted.

On the other hand, when measuring the illumination unevenness in the illumination area of the illumination light B, the controller C positions the detector 21 in the illumination area of the illumination light B, and drives the linear guide 22 via the actuator. The light blocking plate 23 is positioned at a position where the light path of the illumination light B is blocked except for the stop 23a. Then, the reticle R is illuminated by the illumination light B with the reticle R removed from the reticle stage. As a result, as shown in FIG.
Receives the illumination light B incident through the aperture 23a.
In other words, the size of the illumination light receiving range for the detector 21 is set to a pinhole-shaped size.

Then, the control device C controls the substrate stage 19
Is repeated and the illuminance measurement of the illumination light B is repeatedly performed a plurality of times, thereby obtaining the illuminance of the illumination light B at a plurality of locations over the entire irradiation area, and obtaining the illumination unevenness of the irradiation area from these results. . Thereafter, the control device C
Controls the adjustment mechanism of the illumination optical system so as to suppress illumination unevenness in the irradiation area.

As described above, using the irradiation amount monitor 20,
After the measurement of the irradiation amount and illumination unevenness of the illumination light B is completed, and the adjustment of the illumination characteristics of the illumination optical system and the adjustment of the imaging characteristics of the projection optical system PL are completed, the illumination light B from the illumination optical system is applied to the reticle R. Thus, a predetermined illumination area on reticle R is illuminated with uniform illuminance. As a result, the illumination light B transmitted through the pattern area of the reticle R is irradiated onto the glass substrate P coated with the resist via the projection optical system PL.
Then, the pattern of the reticle R is transferred to the exposure area on the glass substrate P.

As described above, in the illuminance measuring apparatus and the exposure apparatus according to the present embodiment, the size of the opening on the optical path of the illuminating light B is changed by moving the light shielding plate 23 to irradiate the detector 21. The light receiving range of the illumination light B can be easily changed to a pinhole-like size and a size covering the entire detector. As a result, measurement of illuminance with different characteristics, such as illumination unevenness measurement and irradiation amount measurement, can be performed by a single device, eliminating the need to install a sensor for each measurement, preventing an increase in the cost and size of the device. can do.

The detector 21 in the above embodiment is provided with an amplifier of an electric circuit. However, there is a difference in the amount of illumination light received by the detector 21 between the measurement of the irradiation amount and the measurement of the irradiation unevenness. Since there is a possibility that the amplification factors differ greatly, it is necessary to provide amplifiers in accordance with the amplification factors at the time of each measurement. Therefore, as shown by a two-dot chain line in FIG. 2, the light-shielding plate 23 on the detector 21 side (+ Y side)
An ND filter (correction unit) 25 for dimming the incident illumination light B may be provided.

In this case, as shown in FIG. 3C, the illumination light B enters the detector 21 in a state where the illumination light B is attenuated by passing through the ND filter 25. Therefore, the stop 23a shown in FIG. Can be reduced (corrected) with respect to the amount of illumination light B that passes through and enters the detector 21. Therefore, the dynamic range of the detector 21 can be optically adjusted at the time of measuring the irradiation amount and the irradiation unevenness, and the amplifier can be shared, so that the apparatus can be reduced in cost and space can be saved. Can be realized.

FIGS. 4 and 5 are views showing a second embodiment of the illuminance measuring device according to the present invention. In these drawings, the same components as those of the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof will be omitted. The difference between the second embodiment and the first embodiment is the configuration of the light shielding plate 23 and the configuration of the ND filter.

As shown in FIG. 4, the light-shielding plate 23 has a pinhole-shaped aperture (first opening) 23a and a rectangular aperture (second aperture) having an opening substantially the same size as the light receiving range of the detector 21. Opening 23d is formed at an interval in the Y direction. The guide member 18 for guiding the linear guide 22 is provided with a linear guide 28 to which a filter plate 27 is integrally fixed so as to be reciprocally movable. The linear guide 28 is driven by an actuator such as an air cylinder or a motor controlled by the control device C.
And is driven independently.

The filter plates 27 are arranged at intervals along the XY plane and above the light shielding plate 23 (+ Z side) in the Z direction. The filter plate 27 has a diaphragm 23
ND filters (correction units) 27a and 27b having areas slightly larger than d and having different dimming rates (correction amounts) are provided along the Y direction. Other configurations are the same as those in the first embodiment.

When measuring the illumination unevenness using the irradiation amount monitor 20 having the above configuration, the detector 21 is positioned in the illumination area of the illumination light B, and the stop 23a is illuminated as shown in FIG. The light shielding plate 23 is positioned on the optical path of the light B.
And the filter plate 27 is retracted from this optical path. Thus, the detector 21 receives the illumination light B incident via the pinhole-shaped aperture 23a.
As described above, by repeating the movement of the substrate stage 19 and the measurement of the illuminance of the illumination light B a plurality of times, it is possible to obtain the illumination unevenness in the irradiation area.

On the other hand, when measuring the irradiation amount by the irradiation amount monitor 20, it is sufficient to move only the light shielding plate 23 in the state of FIG. . This allows the detector 21 to receive the illumination light B that has passed through the stop 23d. In this case, as described above, in order to correct the light amount difference from that at the time of measuring the illumination unevenness and share the amplifier in the detector 21, FIG.
As shown in (b), for example, the filter plate 27 may be moved so that the ND filter 27a is located on the optical path of the illumination light B. The selection of the ND filters 27a and 27b can be arbitrarily performed by the control device C according to, for example, the photosensitive characteristics of a resist (photosensitive agent) applied on the glass substrate P.

FIG. 6 is a view showing a third embodiment of the illuminance measuring device of the present invention. In this figure, the same elements as those of the second embodiment shown in FIGS. 4 and 5 are denoted by the same reference numerals, and description thereof will be omitted. The difference between the third embodiment and the second embodiment is that the light shielding plate 2
Third, the configuration of the filter plate 27 and the provision of the interference filter are provided.

In this embodiment, + Z of the detector 21
And a disk-shaped light-shielding plate 23 and filter plates 27 and 29 that are respectively rotated around the central axis are provided on the sides of the control device C.
Are independently driven to rotate. The light shielding plate 23 has a size from a pinhole shape to a size substantially equal to the light receiving range of the detector 21.
Stops 23a to 23d having different opening areas are formed. Each of the apertures 23a to 23d is annularly arranged around the central axis so as to face the detector 21 when the light shielding plate 23 is rotated (the aperture 23d in FIG. 6).
Are arranged facing the detector 21).

The filter plate 27 has ND filters (correction units) 27a to 27c having different dimming rates from each other, and an opening 27d having substantially the same size as the stop 23d of the light shielding plate 23.
Are formed. When each of the ND filters 27a to 27c and the opening 27d rotates when the filter plate 27 rotates,
They are arranged annularly around the central axis so as to face the detector 21 (in FIG. 6, the opening 27d is opposed to the detector 21).

The filter plate 29 includes an interference filter (wavelength selection unit) 2 that transmits a light beam of a predetermined wavelength in the illumination light B.
9a to 29c and an opening 29d having substantially the same size as the stop 23d of the light shielding plate 23 are formed. As the interference filters 29a to 29c, for example, among g-line, h-line and i-line transmitted through the interference filter 6 of the illumination optical system, the interference filter 29a transmits only the g-line and the interference filter 29b
A configuration can be selected in which only the line is transmitted and the interference filter 29c transmits only the i-line.

In measuring illumination unevenness in the present embodiment, the detector 21 is positioned in the illumination area of the illumination light B, and the light shielding plate 23 is rotated so that one of the apertures 23a to 23c faces the detector 21. Then, the filter plate 27 is rotated so that the opening 27d faces the detector 21, and the filter plate 29 is further rotated such that the opening 29d faces the detector 21. Thereby, the detector 21 can receive the illumination light B incident through any of the apertures 23a to 23c, and as described above,
By repeating the movement of the substrate stage 19 and the measurement of the illuminance of the illumination light B a plurality of times, it is possible to obtain the illumination unevenness in the irradiation area.

On the other hand, when the irradiation amount is measured by the irradiation amount monitor 20, the light shielding plate 23 is rotated so that the diaphragm 23d faces the detector 21, and the filter plate 27 is moved so that the opening 27d faces the detector 21. , And further rotate the filter plate 29 so that the opening 29 d faces the detector 21. As a result, the illumination light B that has passed through the stop 23d and the openings 27d and 29d is
1 can receive light. Further, as described above, the ND filters 27a to 27d are used in order to correct the light amount difference from the time when the illumination unevenness is measured and to share the amplifier in the detector 21.
What is necessary is just to rotate the filter plate 27 so that any of 7c may face the detector 21P. This ND filter 2
The selection of 7a to 27c can also be arbitrarily performed by the control device C according to, for example, the photosensitive characteristics of the resist applied on the glass substrate P.

In this embodiment, the filter plate 29 is rotated so that one of the interference filters 29a to 29c faces the detector 21 in accordance with the photosensitive characteristics of the resist. Among them, the irradiation amount is measured only for the light beam transmitted through the interference filter. That is, the detector 21 can measure the irradiation amount for each transmitted wavelength corresponding to the interference filters 29a to 29c.

FIG. 7 is a diagram showing a fourth embodiment of the illuminance measuring device of the present invention. In this figure, FIGS.
The same reference numerals are given to the same components as those of the first embodiment shown in FIG. The difference between the fourth embodiment and the first embodiment is the configuration of the detector 21 and the light shielding plate 23.

That is, as shown in this figure, the detector 21 is divided into four parts by a dividing line LY along the Y direction and a dividing line LX along the X direction. The aperture 23a is formed on the light shielding plate 23 so as to be located near the center of each of the divided detectors when the light shielding plate 23 covers the detector 21. Other configurations are the same as those in the first embodiment.

In the above configuration, when measuring the illumination unevenness in the irradiation area of the illumination light B, four locations can be measured at a time. Therefore, the number of repetitions of the movement of the substrate stage 19 and the illuminance measurement of the illumination light B is reduced to 1 /. 4, which makes it possible to improve the throughput regarding the illuminance measurement.

FIGS. 8 and 9 are views showing a fifth embodiment in which the illuminometer device of the present invention is used in a scanning exposure apparatus E. In these drawings, the same components as those of the first embodiment shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof will be simplified.

As shown in FIG. 8, this scanning exposure apparatus E
In FIG. 1, a reticle R and a glass substrate P are synchronously moved with respect to a plurality of (in this case, five) optical paths arranged in parallel to scan and expose the image of the reticle R to the glass substrate P, and are shown in FIG. The shutter 4 to the relay lens 15 and the like,
An illumination optical system 30 for illuminating different illumination areas (here, five locations) on the reticle R, and a plurality of projection system modules PL
A projection optical system PL including 1 to PL5, a reticle stage for holding a reticle R, and a substrate stage 19 for holding a glass substrate P are mainly configured. A monitor 20 is provided.

The projection system modules PL1 to PL5 project images corresponding to the illumination area of the reticle R into projection areas PA1 to PA5 having different trapezoidal shapes on the glass substrate P as shown in FIG.
Each of them forms an image at the same magnification. The projection areas PA1 to PA5 are adjacent areas (for example, PA1 and PA2, PA2 and PA2).
3) are arranged so as to be displaced by a predetermined amount in the X direction, and so that adjacent regions overlap each other in the Y direction, which is a direction orthogonal to the scanning direction (synchronous movement direction). That is, the projection areas PA1 to PA5 are projected so as to be overlapped at the triangular overlapping portions J1 to J10 at both ends in the Y direction when scanning exposure is performed. Note that the overlapping area J1 in the + Y direction of the projection area PA1 and the projection area PA
5, the overlapping portion J10 in the −Y direction is formed after the first scanning exposure.
When performing the second scanning exposure by stepping in the Y direction,
When the projection areas are overlapped, they are overlapped.

In order to measure the illumination unevenness and the irradiation amount of the projection areas PA1 to PA5 using the irradiation amount monitor 20 in the exposure apparatus E having the above configuration, the detector 2 is used in the same manner as described above.
The substrate stage 19 is moved so that 1 is located in the projection areas PA1 to PA5, and the light shielding plate 23 is driven. Here, in the illuminance measurement for the projection regions PA1 to PA5, the irradiation amount and the illumination unevenness in each projection region are measured and adjusted. In particular, the illuminance in the overlapping portions J1 to J10 is measured, and the irradiation amount between the overlapping portions is measured. By suppressing the difference, the illuminance difference between the pattern exposed in the overlapping portion and the exposure pattern in the non-overlapping portion, that is, the difference in the amount of exposure energy can be suppressed, and the occurrence of band unevenness in the scanning direction can be prevented. Quality devices can be obtained.

The ND shown in the above embodiment is
The numbers and types of filters and interference filters are merely examples, and other numbers and types may be adopted. The same applies to the number and shape of the projection areas of the projection optical system PL in the scanning exposure apparatus. Further, in the above embodiment, the illuminance measuring device of the present invention is used as an exposure device. However, the present invention is not limited to this. In general, a device that switches a light receiving range of a light receiving device such as a detector to a plurality of sizes. Applicable to

The substrate of the present embodiment is not limited to a glass substrate P for a liquid crystal display device, but also a semiconductor wafer for a semiconductor device, a ceramic wafer for a thin film magnetic head, or a mask or a mask used in an exposure apparatus. An original reticle (synthetic quartz, silicon wafer) or the like is applied.

The exposure apparatus E is a step-and-scan type scanning exposure apparatus (scanning stepper; US Pat. No. 5,473,410) for scanning and exposing the pattern of the reticle R by synchronously moving the reticle R and the glass substrate P. In addition, the present invention can also be applied to a step-and-repeat type projection exposure apparatus (stepper) that exposes the pattern of the reticle R while the reticle R and the glass substrate P are stationary and sequentially moves the glass substrate in steps. .

The type of the exposure apparatus E includes a glass substrate P
It is not limited to an exposure apparatus for manufacturing a liquid crystal display device that exposes a liquid crystal display device pattern to a wafer, but also an exposure apparatus for manufacturing a semiconductor device that exposes a semiconductor device pattern to a wafer, a thin film magnetic head, an imaging device (CCD) or a reticle. It can be widely applied to an exposure apparatus for manufacturing and the like.

As the light source of the illumination light B, bright lines (g-line (436 nm), h-line (404.7 nm), i-line (365 nm)), KrF excimer laser (248 nm), and ArF excimer laser (193 nm), not only the F ₂ laser (157 nm), it is possible to use a charged particle beam such as X-ray or electron beam. For example, when using an electron beam, thermionic emission type lanthanum hexaborite (LaB ₆ ) or tantalum (Ta) can be used as the electron gun. Further, when an electron beam is used, a configuration using a reticle R may be used, or a pattern may be formed directly on a glass substrate without using the reticle R. Alternatively, a high frequency such as a YAG laser or a semiconductor laser may be used.

The magnification of the projection optical system PL may be any of a reduction system and an enlargement system as well as an equal magnification system. Further, as a projection optical system PL, when far ultraviolet rays such as excimer laser are used, a material that transmits far ultraviolet rays such as quartz or fluorite is used as a glass material, and when an F ₂ laser or X-ray is used, a catadioptric system or An optical system of a refraction system (a reticle R of a reflection type is also used). When an electron beam is used, an electron optical system including an electron lens and a deflector may be used as the optical system. It is needless to say that the optical path through which the electron beam passes is in a vacuum state. Further, the present invention can also be applied to a proximity exposure apparatus that exposes the pattern of the reticle R by bringing the reticle R and the glass substrate P into close contact with each other without using the projection optical system PL.

When a linear motor (see US Pat. No. 5,623,853 or US Pat. No. 5,528,118) is used for the substrate stage 19 or the reticle stage, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force is used. May be used. Further, the substrate stage 19 and the reticle stage may be of a type that moves along a guide, or may be of a guideless type without a guide.

As a driving mechanism of the substrate stage 19 and the reticle stage, a magnet unit (permanent magnet) having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil are opposed to each other, and the substrate stage 19 is driven by electromagnetic force. Alternatively, a flat motor for driving the reticle stage may be used. In this case, one of the magnet unit and the armature unit is connected to the substrate stage 19 or the reticle stage, and the other of the magnet unit and the armature unit is connected to the substrate stage 1.
9 or on the moving surface side (base) of the reticle stage.

The reaction force generated by the movement of the substrate stage 19 is disclosed in Japanese Unexamined Patent Publication No.
As described in 166475 (US Pat. No. 5,528,118), a frame member may be used to mechanically escape to the floor (ground). The present invention is also applicable to an exposure apparatus having such a structure. The reaction force generated by the movement of the reticle stage is not transmitted to the projection optical system PL so as to be disclosed in Japanese Patent Application Laid-Open No. 8-330224 (US S / N 08/416,
As described in 558), it may be mechanically released to the floor (ground) using a frame member. The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the exposure apparatus E, which is the substrate processing apparatus according to the embodiment of the present invention, performs various kinds of subsystems including each component listed in the claims of the present application with predetermined mechanical accuracy and electrical accuracy. It is manufactured by assembling to maintain optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electric systems to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the various subsystems into the exposure apparatus includes mechanical connection, wiring connection of an electric circuit, and piping connection of a pneumatic circuit between the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

As shown in FIG. 10, for a device such as a liquid crystal display device or a semiconductor device, a step 201 for designing the function and performance of the liquid crystal display device and the like, and a step for manufacturing a reticle R (mask) based on this design step. 202, a step 203 of manufacturing a glass substrate P from quartz or the like or a wafer from a silicon material, a step 204 of exposing the pattern of the reticle R to the glass substrate P (or wafer) by the exposure apparatus 1 of the above-described embodiment, a liquid crystal display It is manufactured through a step of assembling devices and the like (including a dicing step, a bonding step, and a package step in the case of a wafer) 205, an inspection step 206, and the like.

[0059]

As described above, the illuminance measuring device according to the first aspect has a configuration in which the light receiving range of the light beam irradiated to the light receiving device is defined in a plurality of sizes, and the size of the light receiving range is switched. Has become. As a result, this illuminance measurement device can perform measurement related to illuminance with different characteristics, such as illumination unevenness measurement and irradiation amount measurement, with one device. This has the effect of preventing an increase in cost and size.

The illuminance measuring device according to claim 2 is configured such that the first opening or the second opening having different sizes is located on the optical path of the light beam. As a result, the illuminance measuring device has an effect that the light receiving range of the light beam irradiated to the light receiving device can be easily changed.

According to a third aspect of the present invention, in the illuminance measuring device, a plurality of first openings are arranged apart from each other, and the light receiving device is divided into a plurality of light receiving devices corresponding to respective positions of the plurality of first openings. ing. Thereby, in this illuminance measurement device, the number of repetitions of the illuminance measurement is reduced, and the effect of improving the throughput is obtained.

The illuminance measuring device according to claim 4 is configured to correct a difference in light amount between light beams received in a plurality of light receiving ranges. Thereby, in this illuminance measuring device,
Even when measuring illuminance with different characteristics, the amplifier can be shared by optically adjusting the dynamic range of the light receiving device, so that the device can be reduced in cost and space can be saved. Is obtained.

The illuminance measuring device according to the fifth aspect has a configuration having a wavelength selecting section for transmitting a light beam having a predetermined wavelength among the light beams. Thereby, in this illuminance measuring device,
There is an effect that information on the illuminance of the light beam can be measured for each wavelength.

According to a sixth aspect of the present invention, there is provided an exposure apparatus, wherein the illuminance measuring apparatus according to any one of the first to fifth aspects is used as an apparatus for measuring information on the illuminance of a light beam in an exposure area. Has become. This eliminates the need for installing a sensor for each measurement in this exposure apparatus, and has the effect of preventing an increase in cost and size of the apparatus.

In the exposure apparatus according to the present invention, a plurality of projection optical systems whose projection areas overlap each other on the substrate are provided, and the illuminance measuring apparatus measures information on the illuminance of the light beam at least in the overlapping portion of the projection areas. It has a configuration. Thus, in this exposure apparatus, even when a large-area substrate is exposed to a pattern using a so-called multi-lens projection optical system, the exposure energy between the pattern exposed at the overlapping portion and the exposure pattern at the non-overlapping portion is increased. The difference in the amount can be suppressed, and the occurrence of band unevenness in the scanning direction can be prevented, so that a device of good quality can be obtained.

In the exposure apparatus according to the present invention, a plurality of correction units for correcting the difference in the amount of light beams received in a plurality of light receiving ranges are provided with different correction amounts, and the photosensitive agent applied to the substrate is provided. Is configured to switch the correction unit based on the photosensitive characteristics. Thus, in this exposure apparatus, the amplifier can be shared by correcting the difference in the amount of light according to the photosensitive characteristics of the photosensitive agent, so that the effect of reducing the cost and space of the apparatus can be obtained. .

According to the ninth aspect of the present invention, the exposure apparatus includes:
A plurality of wavelength selectors for transmitting a light beam of a predetermined wavelength are provided at different wavelengths to be transmitted, and the wavelength selectors are switched based on the photosensitive characteristics of the photosensitive agent applied to the substrate. Accordingly, this exposure apparatus has an effect that information on the illuminance of the light beam can be measured for each wavelength according to the photosensitive characteristics of the photosensitive agent.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an embodiment of the present invention, and is a schematic configuration diagram of an exposure apparatus including an irradiation amount monitor.

FIG. 2 is an external perspective view showing a first embodiment of the irradiation dose monitor.

3A is an irradiation amount, FIG. 3B is illumination unevenness,
(C) is an explanatory view showing the operation of the light shielding plate when measuring the irradiation amount in the dimmed state.

FIG. 4 is an external perspective view showing a second embodiment of a dose monitor.

FIGS. 5A and 5B are explanatory views showing the operation of a light shielding plate and a filter plate when measuring an irradiation amount in a dimmed state; FIG.

FIG. 6 is a plan view showing a third embodiment of the irradiation amount monitor.

FIG. 7 is an external perspective view showing a fourth embodiment of a dose monitor.

FIG. 8 is a view showing a fifth embodiment of the present invention, and is a schematic configuration diagram of a scanning exposure apparatus provided with an irradiation amount monitor.

FIG. 9 is a plan view showing a projection area of the projection optical system.

FIG. 10 is a flowchart illustrating an example of a manufacturing process of a liquid crystal display device.

[Description of Signs] B Illumination light (light flux) C Control device (switching device) E Exposure device P Glass substrate (substrate) PL1 to PL5 Projection system module (projection optical system) PA1 to PA5 Projection area R Reticle (mask) 20 Variable Irradiation dose monitor with iris (illuminance measuring device) 21 Detector (light receiving device) 23 Shield plate (regulating device) 23a Aperture (first opening) 23d Aperture (second opening) 25, 27a to 27c ND filter (correction unit) 29a-29c Interference filter (wavelength selector)

Claims (9)

[Claims] 1. An illuminance measuring device for receiving an irradiated light beam and measuring information on the illuminance of the light beam, wherein: a light receiving device for receiving the light beam; and a light receiving range of the light beam irradiated to the light receiving device. And a switching device that drives the defining device to switch the size of the light receiving range. 2. The illuminance measuring device according to claim 1, wherein the defining device has a first opening and a second opening having different sizes from each other, and the switching device has the first opening or the second opening. An illuminance measurement device, wherein a second opening is located on an optical path of the light beam. 3. The illuminance measurement device according to claim 2, wherein a plurality of the first openings are arranged apart from each other, and a plurality of the light receiving devices are provided corresponding to respective positions of the plurality of first openings. An illuminance measurement device characterized by being divided into: 4. The illuminance measurement device according to claim 1, further comprising a correction unit configured to correct a light amount difference between the light beams received in the plurality of light receiving ranges. Illuminance measurement device. 5. The illuminance measurement device according to claim 1, further comprising: a wavelength selection unit that transmits the luminous flux having a predetermined wavelength out of the luminous flux. 6. An exposure apparatus for exposing a pattern of a mask illuminated by a light beam on an exposure area of a substrate, wherein the apparatus measures information on illuminance of the light beam in the exposure area. Or 1
An exposure apparatus, wherein the illuminance measurement apparatus described in the section is used. 7. The exposure apparatus according to claim 6, wherein a plurality of projection optical systems whose projection areas overlap with each other on the substrate are provided, and wherein the illuminance measuring device includes at least the luminous flux in an overlapping portion of the projection areas. An exposure apparatus for measuring information on the illuminance of a subject. 8. The exposure apparatus according to claim 6, wherein a plurality of correction units for correcting a light amount difference between the light beams received in the plurality of light receiving ranges are provided with different correction amounts. The exposure apparatus, wherein the switching device switches the correction unit based on a photosensitive characteristic of a photosensitive agent applied to the substrate. 9. The exposure apparatus according to claim 6, wherein a plurality of wavelength selectors for transmitting the light having a predetermined wavelength out of the light are provided with different wavelengths to be transmitted. An exposure apparatus, wherein the switching device switches the wavelength selection unit based on a photosensitive characteristic of a photosensitive agent applied to the substrate.