JP2002329870A5 - - Google Patents

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Publication number
JP2002329870A5
JP2002329870A5 JP2001184310A JP2001184310A JP2002329870A5 JP 2002329870 A5 JP2002329870 A5 JP 2002329870A5 JP 2001184310 A JP2001184310 A JP 2001184310A JP 2001184310 A JP2001184310 A JP 2001184310A JP 2002329870 A5 JP2002329870 A5 JP 2002329870A5
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JP
Japan
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Application number
JP2001184310A
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JP2002329870A (ja
JP4993822B2 (ja
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Priority to JP2001184310A priority Critical patent/JP4993822B2/ja
Priority claimed from JP2001184310A external-priority patent/JP4993822B2/ja
Publication of JP2002329870A publication Critical patent/JP2002329870A/ja
Publication of JP2002329870A5 publication Critical patent/JP2002329870A5/ja
Application granted granted Critical
Publication of JP4993822B2 publication Critical patent/JP4993822B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001184310A 2000-06-19 2001-06-19 半導体装置の作製方法 Expired - Fee Related JP4993822B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001184310A JP4993822B2 (ja) 2000-06-19 2001-06-19 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000183817 2000-06-19
JP2000183817 2000-06-19
JP2001-57224 2001-03-01
JP2001057224 2001-03-01
JP2001057224 2001-03-01
JP2000-183817 2001-03-01
JP2001184310A JP4993822B2 (ja) 2000-06-19 2001-06-19 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002329870A JP2002329870A (ja) 2002-11-15
JP2002329870A5 true JP2002329870A5 (ja) 2008-07-17
JP4993822B2 JP4993822B2 (ja) 2012-08-08

Family

ID=27343771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001184310A Expired - Fee Related JP4993822B2 (ja) 2000-06-19 2001-06-19 半導体装置の作製方法

Country Status (1)

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JP (1) JP4993822B2 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101593686B (zh) * 2008-05-30 2011-10-05 中芯国际集成电路制造(北京)有限公司 金属栅极形成方法
JP5562603B2 (ja) * 2008-09-30 2014-07-30 株式会社半導体エネルギー研究所 表示装置
JP5590868B2 (ja) * 2008-12-11 2014-09-17 株式会社半導体エネルギー研究所 半導体装置
CN102709184B (zh) * 2011-05-13 2016-08-17 京东方科技集团股份有限公司 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板
JP2015109343A (ja) * 2013-12-04 2015-06-11 キヤノン株式会社 半導体装置の製造方法
JP7208779B2 (ja) 2018-12-11 2023-01-19 キオクシア株式会社 基板処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109737A (ja) * 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JP3910229B2 (ja) * 1996-01-26 2007-04-25 株式会社半導体エネルギー研究所 半導体薄膜の作製方法
JP4601731B2 (ja) * 1997-08-26 2010-12-22 株式会社半導体エネルギー研究所 半導体装置、半導体装置を有する電子機器及び半導体装置の作製方法
JP4376331B2 (ja) * 1998-08-07 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4386978B2 (ja) * 1998-08-07 2009-12-16 株式会社半導体エネルギー研究所 半導体装置の作製方法

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