JP2002311565A - 微細構造体の製造方法、2値マスク、および2値マスクの製造方法 - Google Patents

微細構造体の製造方法、2値マスク、および2値マスクの製造方法

Info

Publication number
JP2002311565A
JP2002311565A JP2002027647A JP2002027647A JP2002311565A JP 2002311565 A JP2002311565 A JP 2002311565A JP 2002027647 A JP2002027647 A JP 2002027647A JP 2002027647 A JP2002027647 A JP 2002027647A JP 2002311565 A JP2002311565 A JP 2002311565A
Authority
JP
Japan
Prior art keywords
processing
binary mask
manufacturing
mask
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002027647A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002311565A5 (enExample
Inventor
Kimio Nagasaka
公夫 長坂
Akira Miyamae
章 宮前
Eiichi Fujii
永一 藤井
Masatoshi Yonekubo
政敏 米窪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2002027647A priority Critical patent/JP2002311565A/ja
Publication of JP2002311565A publication Critical patent/JP2002311565A/ja
Publication of JP2002311565A5 publication Critical patent/JP2002311565A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
JP2002027647A 2001-02-09 2002-02-05 微細構造体の製造方法、2値マスク、および2値マスクの製造方法 Withdrawn JP2002311565A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002027647A JP2002311565A (ja) 2001-02-09 2002-02-05 微細構造体の製造方法、2値マスク、および2値マスクの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001033687 2001-02-09
JP2001-33687 2001-02-09
JP2002027647A JP2002311565A (ja) 2001-02-09 2002-02-05 微細構造体の製造方法、2値マスク、および2値マスクの製造方法

Publications (2)

Publication Number Publication Date
JP2002311565A true JP2002311565A (ja) 2002-10-23
JP2002311565A5 JP2002311565A5 (enExample) 2005-06-23

Family

ID=26609198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002027647A Withdrawn JP2002311565A (ja) 2001-02-09 2002-02-05 微細構造体の製造方法、2値マスク、および2値マスクの製造方法

Country Status (1)

Country Link
JP (1) JP2002311565A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004070087A (ja) * 2002-08-07 2004-03-04 Dainippon Printing Co Ltd パターンデータの作製方法およびフォトマスク
JP2004296590A (ja) * 2003-03-26 2004-10-21 Dainippon Printing Co Ltd 撮像装置と撮像装置におけるマイクロレンズの形成方法
JP2006098985A (ja) * 2004-09-30 2006-04-13 Dainippon Printing Co Ltd 固体撮像素子レンズ用感光性樹脂組成物、これを用いた固体撮像素子レンズ及び固体撮像素子レンズの形成方法、並びに固体撮像素子
JP2007155927A (ja) * 2005-12-01 2007-06-21 Dainippon Printing Co Ltd 回折光学素子作製方法と回折光学素子、および該作製方法に用いられるレチクルマスク
JP2009008933A (ja) * 2007-06-28 2009-01-15 Oki Electric Ind Co Ltd レジストパターンの形成方法及びフォトマスク
JP2010020146A (ja) * 2008-07-11 2010-01-28 Fujifilm Corp カラーフィルタ及びその製造方法、並びに液晶表示装置
US8092960B2 (en) 2003-01-28 2012-01-10 Sony Corporation Exposing mask and production method therefor and exposing method
US9698157B2 (en) 2015-03-12 2017-07-04 Kabushiki Kaisha Toshiba Microstructure device and method for manufacturing the same
WO2021033937A1 (ko) * 2019-08-20 2021-02-25 울산과학기술원 디더링 마스크를 이용한 홀로그래픽 패턴 발현 유기젤의 제조방법
KR20220049438A (ko) * 2020-10-14 2022-04-21 울산과학기술원 디더링 마스크에 기반한 홀로그램 색상 지정 시스템 및 홀로그램 색상 지정 방법
KR20220049439A (ko) * 2020-10-14 2022-04-21 울산과학기술원 어레이형의 홀로그램을 이용한 암호화 시스템
KR20230038685A (ko) * 2020-10-14 2023-03-21 울산과학기술원 디더링 마스크에 기반한 홀로그램 색상 지정 시스템 및 홀로그램 색상 지정 방법

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004070087A (ja) * 2002-08-07 2004-03-04 Dainippon Printing Co Ltd パターンデータの作製方法およびフォトマスク
US8092960B2 (en) 2003-01-28 2012-01-10 Sony Corporation Exposing mask and production method therefor and exposing method
JP2004296590A (ja) * 2003-03-26 2004-10-21 Dainippon Printing Co Ltd 撮像装置と撮像装置におけるマイクロレンズの形成方法
JP2006098985A (ja) * 2004-09-30 2006-04-13 Dainippon Printing Co Ltd 固体撮像素子レンズ用感光性樹脂組成物、これを用いた固体撮像素子レンズ及び固体撮像素子レンズの形成方法、並びに固体撮像素子
JP2007155927A (ja) * 2005-12-01 2007-06-21 Dainippon Printing Co Ltd 回折光学素子作製方法と回折光学素子、および該作製方法に用いられるレチクルマスク
JP2009008933A (ja) * 2007-06-28 2009-01-15 Oki Electric Ind Co Ltd レジストパターンの形成方法及びフォトマスク
JP2010020146A (ja) * 2008-07-11 2010-01-28 Fujifilm Corp カラーフィルタ及びその製造方法、並びに液晶表示装置
US9698157B2 (en) 2015-03-12 2017-07-04 Kabushiki Kaisha Toshiba Microstructure device and method for manufacturing the same
WO2021033937A1 (ko) * 2019-08-20 2021-02-25 울산과학기술원 디더링 마스크를 이용한 홀로그래픽 패턴 발현 유기젤의 제조방법
KR20210022384A (ko) * 2019-08-20 2021-03-03 울산과학기술원 디더링 마스크를 이용한 홀로그래픽 패턴 발현 유기젤의 제조방법
KR102255555B1 (ko) 2019-08-20 2021-05-25 울산과학기술원 디더링 마스크를 이용한 홀로그래픽 패턴 발현 유기젤의 제조방법
US12038719B2 (en) 2019-08-20 2024-07-16 Unist (Ulsan National Institute Of Science And Technology) Method for preparing holographic pattern-expressing organogel using dithering mask
KR20220049438A (ko) * 2020-10-14 2022-04-21 울산과학기술원 디더링 마스크에 기반한 홀로그램 색상 지정 시스템 및 홀로그램 색상 지정 방법
KR20220049439A (ko) * 2020-10-14 2022-04-21 울산과학기술원 어레이형의 홀로그램을 이용한 암호화 시스템
KR102510926B1 (ko) * 2020-10-14 2023-03-16 울산과학기술원 디더링 마스크에 기반한 홀로그램 색상 지정 시스템 및 홀로그램 색상 지정 방법
KR20230038685A (ko) * 2020-10-14 2023-03-21 울산과학기술원 디더링 마스크에 기반한 홀로그램 색상 지정 시스템 및 홀로그램 색상 지정 방법
KR102523616B1 (ko) * 2020-10-14 2023-04-20 울산과학기술원 어레이형의 홀로그램을 이용한 암호화 시스템
KR102742536B1 (ko) * 2020-10-14 2024-12-16 울산과학기술원 디더링 마스크에 기반한 홀로그램 색상 지정 시스템 및 홀로그램 색상 지정 방법

Similar Documents

Publication Publication Date Title
US6071652A (en) Fabricating optical elements using a photoresist formed from contact printing of a gray level mask
US6638667B2 (en) Fabricating optical elements using a photoresist formed using of a gray level mask
Gale et al. Fabrication of continuous-relief micro-optical elements by direct laser writing in photoresists
US6534221B2 (en) Method for fabricating continuous space variant attenuating lithography mask for fabrication of devices with three-dimensional structures and microelectronics
Dinh et al. Maskless lithography based on digital micromirror device (DMD) and double sided microlens and spatial filter array
US6657208B2 (en) Method of forming optical images, mask for use in this method, method of manufacturing a device using this method, and apparatus for carrying out this method
Wagner et al. Microfabrication of complex surface topographies using grey-tone lithography
JP2000514933A (ja) 無機カルコゲナイドガラスを用いたグレースケールマスク及び深さパターン転写技術
JP2002311565A (ja) 微細構造体の製造方法、2値マスク、および2値マスクの製造方法
US20190079395A1 (en) Manufacturing method of diffractive optical elements
CN110703577A (zh) 超表面彩色全息的制备方法及光学系统
JP5391670B2 (ja) 微細構造体の製造方法
JPWO2020153319A1 (ja) 拡散板
JP3921953B2 (ja) マスク、マスクの製造方法、微細構造体の製造方法、及び液晶ディスプレイの製造方法
JP2001272764A (ja) 投影露光用フォトマスク、およびそれを用いた投影露光方法
EP1137969A1 (en) Method of using a modulated exposure mask
Quentel et al. Multilevel diffractive optical element manufacture by excimer laser ablation and halftone masks
JP4366121B2 (ja) 素子の製造方法
JPH08174563A (ja) 三次元形状の形成方法、該方法により形成した三次元構造体およびプレス成形型
US9952516B1 (en) System and method for generating a lithographic image with the use of a digital hologram and a reflective concave in curvilinear surface
CN101673057A (zh) 基于数字微镜器件亚微米周期结构制备系统
CN114967367B (zh) 一种用于透明基底的双面光刻方法
JPH05224398A (ja) 透過率変調型フォトマスク、およびそれを用いる光学部品の製造方法
JP3273986B2 (ja) 光露光用マスク板及びその製造方法
US10162307B2 (en) System and method for generating a lithographic image with the use of a reflective concave curvilinear surface and a digital hologram in a diverging beam

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041001

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041001

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070413

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070418

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20070613