JP2002305281A - Lead frame and electronic apparatus using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame, in which the electrode pads of an electronic component and leads of the lead frame can be bump-connected easily, without bringing the adjacent leads into contact, when pitches of the electrode pads of the electronic component such as a semiconductor chip or the like are smaller than 200 μm and, even if the pitches of the electrode pads are preferably small at about 100 to 110 μm, and to provide an electronic apparatus provided with the lead frame. SOLUTION: The semiconductor chip 95, on which a plurality of electrode pads 96, and so on are installed is mounted on the lead frame. In the lead frame, a plurality of leads 5 whose ends on one side are connected to the electrode pads 96 are formed, insulation materials 7 are attached and formed on faces on both sides or faces on one side of the leads 5, by excluding at least parts connected to the electrode pads 96, and lead separation means 8 which are used to prevent the adjacent leads 5, 5 from coming into contact are installed at the insulation materials 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for mounting an electronic component such as a semiconductor chip and an electronic device such as a semiconductor device using the same, and more particularly, to an electrode pad pitch of an electronic component such as a semiconductor chip. The present invention relates to a lead frame capable of easily connecting an electrode pad of an electronic component and a lead of a lead frame to a lead frame without contact between adjacent leads even when the pitch is reduced, and an electronic device using the same. .

[0002]

2. Description of the Related Art Conventionally, semiconductor chips such as IC chips and LSI chips are small pieces and are difficult to handle and mount as they are, so that they are housed in containers called IC packages and used as semiconductor devices. When a semiconductor chip is mounted on an IC package, a metal plate called a lead frame is mounted on a punched frame, and a plurality of electrode pads provided on the semiconductor chip are connected to the lead frame. A plurality of leads for connecting to the chip electrode pads are formed on the lead frame. As a method for connecting the chip electrode pad and the lead frame, a wire bonding method or a bump connection method is adopted.

[0003] In the wire bonding method, as shown in FIG. 16, a semiconductor chip 100 provided with a plurality of electrode pads 101 is formed on a lead frame 120 provided with a plurality of leads 125. The surface is placed facing upward (opposite to the lead frame 120 side), and each electrode pad (ball grid array type terminal) 101 is connected to one end of a corresponding lead 125 by a bonding wire 130. is there. On the other hand, in the bump connection method, as shown in FIG. 17, a semiconductor chip 1 is mounted on a lead frame 120a provided with a plurality of leads 125a.
00 on the lower side (lead frame 120).
This is a method in which a solder ball (bump) 126 is interposed between each electrode pad 101 and a corresponding lead 125a when the semiconductor device is mounted toward the (a side). In FIGS. 16 and 17, reference numerals 135 and 136 denote IC packages covering the semiconductor chip and the connection portion of the lead frame and the semiconductor chip connected as described above. Recently, the package has been diversified for reasons such as miniaturization of the package.

Recently, for the purpose of using the above-mentioned semiconductor device in a high frequency region such as a microwave and a millimeter wavelength band, a semiconductor chip included in the semiconductor device has been provided with multiple electrodes and a high-density mounting. As a result, the pitch of the electrode pads has been narrowed, and semiconductor chips having a pitch of the electrode pads (chip electrode pad pitch) of about 100 to 110 μm have been frequently used. A chip electrode pad of a semiconductor chip having a chip electrode pad pitch of about 100 to 110 μm is about 80 to 100 μm square.

[0005]

However, when a semiconductor chip having a chip electrode pad pitch smaller than 200 μm is used, it has been difficult to employ bump connection.
The reason is described below. FIG. 18 is a view of the semiconductor chip 100 and the lead frame 120a of FIG. 17 as viewed from the lower surface side. When the semiconductor chip 100 having a chip electrode pad pitch P ₁ of 200 μm is mounted, the lead frame 1
Lead width W ₁ of 20a is 150μm, lead spacing L ₁ 5
0 μm. Chip electrode pad pitch P ₁ is 2
When mounting a semiconductor chip of not more than 00 μm, the lead interval L ₁ may be smaller than 50 μm. However, when the lead interval L ₁ is smaller than 50 μm, the adjacent leads 152 a and 125 a
There is a problem that they come into contact with each other.

[0006] Incidentally, lead frames 120a are fabricated by punching a metal plate as mentioned above, the lead width W ₁ at this time is good dimensional accuracy to the size of about the same as the thickness of the lead frame 120a It is said that
When the lead frame 120a having a thickness of 150 μm is used, the dimensional accuracy can be kept good up to the width W _{1 of the} lead 125a of about 150 μm. However, when the width is smaller than 150 μm, the dimensional accuracy deteriorates.
₁ could not be smaller than 150 μm. Also, if the tip electrode pad pitch P ₁ is placed on 200μm semiconductor chip, it is considered to use a thin thickness lead frame, in that case also contact leads interval is each other lead becomes smaller than 50μm problem Will occur. If tip electrode pad pitch P ₁ by the above-mentioned reasons for placing a 200μm smaller semiconductor chip to a lead frame, because it is difficult to adopt the bump connection, of course, the chip electrode pad pitch P ₁ is from 100 to 11
Even when a semiconductor chip with a narrow pitch of about 0 μm is mounted, bump connection cannot be adopted.

Such a problem is not limited to the problem of bump connection between an electrode pad provided on an electronic component such as a semiconductor chip and a lead of a lead frame, but may be another problem such as a substrate on which a circuit or the like is formed. Also in the case where a connection terminal portion such as an electrode pad of a component is bump-connected to a lead (pin) of an electronic component from which a plurality of leads (leads) for external connection are led out, the pitch of the connection terminal portion is set to 200 μm or more. If the size is small, the same problem as described above occurs in that adjacent leads (pins) of the electronic component come into contact with each other.

The present invention has been made in view of the above circumstances, and has an electrode pad pitch of 2 for an electronic component such as a semiconductor chip.
When it is smaller than 00 μm, and preferably even when the electrode pad pitch is as small as about 100 to 110 μm, the electrode pad of this electronic component and the lead of the lead frame can be easily and without the adjacent lead contacting. It is an object of the present invention to provide a lead frame capable of bump connection and an electronic device provided with such a lead frame. In addition, the present invention provides a case where the pitch of connection terminals such as electrode pads provided on another component such as a substrate is smaller than 200 μm, preferably the pitch of connection terminals is 100 to 11 μm.
Even if it is as small as about 0 μm, the connection terminal portion and an external connection lead (pin) provided on the electronic component.
Another object of the present invention is to provide an electronic component that can be easily and easily connected to bumps without contact between adjacent leads, and an electronic device including such an electronic component.

[0009]

In order to solve the above-mentioned problems, a lead frame according to the present invention is a lead frame for mounting an electronic component provided with a plurality of electrode pads. A plurality of leads to be connected are formed, and an insulating material is added to both surfaces or one surface of the leads except for at least a portion connected to the electrode pad. A lead separating means for preventing contact is provided.

Further, in the lead frame of the present invention, both surfaces of the lead may be covered with the insulating material, and the insulating material may be interposed between the leads to serve as the lead separating means. Further, in the lead frame of the present invention, the insulating material may be provided on a lower surface side of the lead, and the insulating material may be provided with a protrusion as the lead separating means. .
Further, in the lead frame of the present invention, the insulating material is provided on the lower surface side and the upper surface side of the lead, and the insulating material on the upper surface side is provided with a convex portion as the lead separating means. May be used. In the lead frame of the present invention, the electronic component may be a semiconductor chip.

According to the lead frame of the present invention, even if the lead interval is narrower than 50 μm for bump connection to the electrode pad of an electronic component such as a semiconductor chip having a chip electrode pad pitch smaller than 200 μm, Is provided with the above-described lead separating means, so that when the electrode pad and the lead are bump-bonded, the bump can be easily connected without contact between adjacent leads. In addition, the lead frame of the present invention can be connected to the electrode pads of an electronic component such as a semiconductor chip having a chip electrode pad pitch of about 100 μm to 110 μm by bump connection. Is provided with the above-described lead separating means, so that when the electrode pad and the lead are bump-bonded, the bump can be easily connected without contact between adjacent leads. In the lead frame of the present invention, a reinforcing plate for reinforcing the lead is provided on the outer surface (the surface opposite to the lead side) of the insulating material. This is preferable because the effect of preventing blur can be enhanced, leads can be stabilized, and bump connection can be further facilitated.

According to another aspect of the present invention, there is provided an electronic apparatus including the above-described lead frame according to the present invention. In the electronic device of the present invention, the provision of the lead frame of the present invention having any one of the above-described configurations allows the space between the electrode pads to be reduced by 20%.
When multiple electrodes having a thickness of 0 μm or less, and preferably about 100 to 110 μm, and bumps are connected to electrode pads of electronic components mounted at high density and corresponding leads, adjacent leads are not in contact with each other and bumps are easily formed. Since the connection can be made, it is possible to provide an electronic device that is small and thin and has excellent high-frequency characteristics.

According to another aspect of the present invention, there is provided a semiconductor device including the lead frame according to the present invention, wherein the electronic component is a semiconductor chip. In the semiconductor device of the present invention, the electronic component is a semiconductor chip, and the lead frame of the present invention having any one of the above structures is provided, so that the distance between the electrode pads is 2 mm.
When a multi-electrode having a thickness of 00 μm or less, preferably about 100 to 110 μm and a bump corresponding to a chip electrode pad of a high-density mounted semiconductor chip and a corresponding lead are bump-connected, an adjacent lead does not come into contact with the chip easily. Since a bump connection can be made, a semiconductor device that is small and thin and has excellent high-frequency characteristics can be provided.

In order to solve the above-mentioned problems, an electronic component according to the present invention is an electronic component from which a plurality of leads for external connection are led out. An insulating material is provided except for a portion connected to the outside, and the insulating material is provided with a lead separating means for preventing contact of the adjacent lead.

Further, in the electronic component of the present invention in which a plurality of leads for external connection are led out, both surfaces of the lead are covered with the insulating material, and the insulating material is interposed between the leads so that the lead separating means is provided. May be characterized. Further, in the electronic component of the present invention in which a plurality of leads for external connection are led out, the insulating material is provided on a lower surface side of the lead, and the insulating material has a protrusion as the lead separating means. May be characterized. Further, in the electronic component of the present invention in which a plurality of leads for external connection are led out, the insulating material is provided on the lower surface side and the upper surface side of the lead, respectively, and the insulating material on the upper surface side serves as the lead separating means. It may be characterized in that a convex portion is provided.

According to the electronic component of the present invention, the above-mentioned lead interval for external connection is used for bump connection to the connection terminal portion of another component such as a substrate in which the pitch of the connection terminal portion such as an electrode pad is smaller than 200 μm. Is smaller than 50 μm,
Since the lead separating means is provided between the leads, when the connection terminal portion and the leads are bump-bonded, the bumps can be easily connected without contacting the adjacent leads. Further, the electronic component of the present invention includes:
Even if the lead spacing is narrower than 50 μm for bump connection to the connection terminal of another component such as a substrate having a connection terminal pitch of about 100 μm to 110 μm, the above lead separating means is provided between the leads. Since it is provided,
When bump connection between the connection terminal portion and the lead,
Bump connection can be easily performed without contact between adjacent leads. Further, in the electronic component of the present invention in which a plurality of leads for external connection are led out, a reinforcing plate for reinforcing the leads is provided on an outer surface (a surface opposite to the lead side) of the insulating material. This is preferable in that the effect of preventing the movement of the lead during bump connection can be enhanced, the lead can be stabilized, and the bump connection can be further facilitated.

According to another aspect of the present invention, there is provided an electronic apparatus including the electronic component of the present invention having one of the above-described configurations from which a plurality of leads for external connection are led out. May be used. In the electronic device of the present invention, the provision of the electronic component of the present invention having any one of the above-described configurations in which a plurality of leads for external connection are provided allows a connection terminal portion to be 200 μm or less, preferably When bumps are connected to leads corresponding to connection terminals of other components such as a substrate having a thickness of about 100 to 110 μm, adjacent leads can be easily bump-connected without contact, so that the size and thickness can be reduced. Electronic equipment can be provided.

[0018]

Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to the following embodiments. (First Embodiment of Lead Frame) FIG. 1 is a view showing a first embodiment of a lead frame of the present invention.
1A is a plan view of the lead frame, and FIG.
It is sectional drawing which follows the -B line. In FIG. 1, the semiconductor chip 95 is shown by a two-dot chain line so that the positional relationship when the semiconductor chip is mounted on the lead frame can be understood. Also, the lead frame and the semiconductor chip
The IC package 98 is shown by a two-dot chain line so that these positional relationships when the C package is mounted can be understood. In the figure, reference symbol c denotes a cutting line for obtaining an individual semiconductor device by cutting the end of the lead (the end of the outer lead portion) after attaching the semiconductor chip 95 and the IC package 98 to the lead frame of the present embodiment. It is.

The lead frame 1 of the first embodiment has a plurality of electrode pads (ball grid array type terminals) 96.
In order to house the semiconductor chip (electronic component) 95 provided with
Is to be placed. This lead frame 1
Is a lead frame main body 2 in which a plurality of leads 5 each having one end connected to an electrode pad 96 are formed, and a plurality of leads 5.
An insulating film (insulating material) 7 attached to the lower surface of the .. and a convex portion 8 provided on the insulating film 7 and serving as a lead separating means for preventing adjacent leads 5 and 5 from contacting each other. It becomes.

The lead frame main body 2 has a long and narrow strip shape and is provided with a plurality of semiconductor chip mounting portions 1a. FIG. 1 shows only a region where one semiconductor chip mounting portion 1a is provided. The semiconductor chip mounting portion 1a is provided with a rectangular hole, and a plurality of holes (16 in the drawing) extending inward from the periphery of the hole 1b are provided in the hole 1b.
) Are provided. Examples of the material of the lead frame main body 2 include metal plates such as iron, copper, and iron-nickel alloy. The lead frame body 2 has a thickness of 90
μm or less, preferably about 50 μm to 90 μm is used. The electrode pad pitch (tip electrode pad pitch) of the semiconductor chip 95 is placed on the lead frame 1 if P ₂ is about 110Myuemu～150myuemu,
The width W of the lead 5 is 100 μm or less, preferably 60 μm
From about 90 μm, and the electrode pad pitch P ₂ is 70 μm or more.
In the case of about 100 μm, a lead 5 having a width W of 80 μm or less, preferably about 50 μm to 80 μm is used. Specific examples of the dimensions of the lead frame body 2, when the chip electrode pad pitch P ₂ is 110 [mu] m,
The plate thickness is 90 μm, the lead width W is 90 μm, the lead pitch P is 110 μm, and the lead interval L is 20 μm.

In each of the leads 5 provided on the lead frame body 2, a portion which enters the package 98 when the IC package 98 is mounted is an inner lead portion 5a, and a portion led out of the package 98 is an outer lead portion 5b.
Call. The lead frame main body 2 as described above can be manufactured by a method of forming the metal plate by etching or the like, in addition to punching and manufacturing the metal plate made of the above-described material.

The insulating film (insulating material) 7 has a rectangular frame shape, and is provided on the lower surface of the inner lead portion 5a of the plurality of leads 5. That is, the insulating film 7 is not provided on the upper surface of the inner lead portion 5a having a portion connected to the electrode pad 96.
It is not provided on both surfaces of the outer lead portion 5b of the lead 5. As a material of the insulating film 7, a heat-resistant polyimide or the like is used. The thickness of the insulating film 7 is from 5 μm to 2
Those having a thickness of about 0 μm, preferably about 5 to 10 μm are used.

Upper surface of insulating film 7 (surface on lead 5 side)
A long projection 8 as a lead separating means is provided integrally with the insulating film 7 at a portion corresponding to between the adjacent leads 5,5. The long protrusion 8 is long along the length direction of the lead 5. The contour of the cross section of the long projection 8 is an inverted U-shape. The thickness (height) of the long convex portion 8 is substantially the same as the thickness of the lead 5 or a thickness slightly smaller than the thickness of the lead 5.

A rectangular frame-shaped reinforcing plate 9 made of metal or the like for reinforcing the leads 5 is provided on the outer surface of the insulating film 7 (the surface opposite to the leads 5). When such a reinforcing plate 9 is provided, the semiconductor chip 9
When the electrode pad 96 of No. 5 and the lead 5 are bump-connected, the lead 5 is reinforced to enhance the effect of preventing the lead 5 from blurring, thereby stabilizing the lead and facilitating the bump connection. The reinforcing plate 9 may be provided so as to be detachable from the insulating film 7 after the IC package 98 is attached.

As a method for manufacturing such a lead frame 1, for example, a reinforcing plate 9, an insulating film 7 on which lead separating means 8... 2, a lower surface of a lead film main body material 2a, both surfaces of an insulating film material 7a on which lead separation means 8 are formed, and a reinforcing plate as shown in FIG. .. Are provided on the upper surface of the material 9b, and when the reinforcing plate material 9b, the insulating film material 7a, and the lead frame body material 2a are overlapped, the corresponding dowels 9a are provided.
can be manufactured by, for example, a method of cutting the laminated body along the cutting line d after combining a.

According to the lead frame 1 of the first embodiment,
If the chip electrode pad pitch P_TwoIs smaller than 200 μm
Bump connection to electrode pad 96 of semiconductor chip 95
The distance L between the leads 5 and 5 should be smaller than 50 μm.
However, as a lead separating means between these leads 5,5,
Since the long protrusion 8 is provided, the electrode pad 96
When bump-bonding the lead 5 and the corresponding lead 5
In addition, contact between the adjacent leads 5 and 5 can be prevented, and
Can be connected. Also, the lead of the present embodiment
In the frame 1, the chip electrode pad pitch P _TwoBut
Electrode pad of the semiconductor chip 95 having a thickness of about 110 μm
The distance L between the leads 5 and 5 is 2
Even if it is 0 μm, a long protrusion 8 is provided between the leads 5 and 5.
The electrode pad 96 and its corresponding lead.
When the bump 5 is bonded to the lead 5, the adjacent leads 5, 5
Easy bump connection without contact
You.

In this embodiment, the case where the lead separating means is the long convex portion 8 has been described. However, as the lead separating means, a projection 8a as shown in FIG. In this case, a plurality (two in the drawing) of the projections 8a are provided between the leads 5 and 5, respectively. The contour of the cross section of the projection 8a is formed in an inverted U-shape, similarly to the elongated projection 8 shown in FIG. Further, the lead separating means may be a long convex portion 8b as shown in FIG.
The contour of the cross section of the long projection 8b is rectangular. In addition, gaps 16 are opened between the long protrusion 8b and the leads 5 on both sides thereof. The lead separating means having a rectangular cross section may be partially provided between the adjacent leads 5, 5 as in FIG.

The lead separating means may be a long projection 8c as shown in FIG. This long projection 8c
Has a rectangular shape in cross section. This long projection 8
There is no gap between the lead c and the leads 5 on both sides thereof, that is, the space between the adjacent leads 5 and 5 (between the inner lead portions 5a and 5a) is filled with the long protrusion 8c. ing. The long convex portion 8c may be formed on the insulating film 7 in advance. For example, as shown in FIG. 6, the insulating film material 7a and the lead frame body material 2a
And a reinforcing plate material 9b are bonded to each other using the above-mentioned adhesive to form a laminate, and then a mold having a hole 11a at a position corresponding to the position where the long protrusion 8c is formed (separation member forming position) (separation). A mask having a pattern corresponding to the member) 11 is disposed on the upper surface of the lead frame body material 2a, and
After the resin is poured from 1a and cured to form the long convex portion c, the laminate can be manufactured by a method of cutting along the cutting line d, or the like.

The lead separating means may be a long projection 8d as shown in FIG. This long projection 8d
Has a triangular profile. The lead separating means having a triangular cross section may be partially provided between the adjacent leads 5, 5 as in FIG. In addition, in the embodiment shown in FIGS. 1 to 6, the case where the insulating film 7 is provided on the lower surface of the inner lead portion 5 a of the lead 5 has been described, but as shown in FIG. 5 may be provided so as to protrude further inward than the inner lead portion 5. Also,
The insulating film 7 may be provided on the outer lead portion 5a of the lead 5 except for a portion connected to the outside.

(Second Embodiment of Lead Frame) FIG. 8
FIG. 4 is a perspective view showing a main part of a second embodiment of the lead frame of the present invention. Lead frame 21 of second embodiment
However, the difference from the lead frame 1 shown in FIGS. 1 to 3 is that the cross-sectional shape of the long convex portion 28 provided as the lead separating means is inverted U-shaped. This long projection 28
A gap 26 is opened between the reinforcing plate 9 and the reinforcing plate 9. As a method for manufacturing such a lead frame 21, for example,
By pushing up the back surface of the insulating film 7 at the position corresponding to between the leads 5 and 5 using a pin or the like, the cross section is inverted U
After the formation of the long convex portions 28..., The reinforcing plate 9, the insulating film 7, the lead frame body 2, and the bonding method using the above-mentioned adhesive can be used. In the lead frame 21 of the present embodiment, the first
The same operation and effect as those of the lead frame 1 of the embodiment can be obtained.

(Third Embodiment of Lead Frame) FIG. 9
FIG. 9 is a perspective view showing a main part of a third embodiment of the lead frame of the present invention. Lead frame 31 of third embodiment
Are different from the lead frame 1 shown in FIG. 4 in that insulating films (insulating materials) 7 are provided on the lower surface side and the upper surface side of the leads 5. This is the point where the long protrusion 8b is provided. The long convex portion 8b of the present embodiment includes the leads 5, 5 from the upper side.
It is provided so as to hang down between them. The ends on the upper surface side of the inner leads 5a of the plurality of leads 5,..., That is, the portions connected to the electrode pads of the semiconductor chip are not covered with the insulating film 7 on the upper surface side. Further, the insulating film 7 on the lower surface side is not provided with the long protrusion 8b as a lead separating means.

The contour of the cross section of the long convex portion 8b in this embodiment is rectangular as in FIG. In addition, gaps 16 are opened between the long protrusion 8b and the leads 5 on both sides thereof.

As a method of manufacturing such a lead frame 31, for example, a reinforcing plate 9 and a lower insulating film 7
And the lead frame main body 2 and the insulating film 7 on the upper surface side on which the long protrusions 8b are formed, by using the above-mentioned adhesive, and the like. When the insulating film 7 on the upper surface is bonded to the lead frame main body 2, the side on which the long convex portions 8 b are provided faces the lead frame main body 2 side, and the long convex portions 8 b
Paste so that is arranged. As another manufacturing method of the lead frame 31, for example, the surface on the side where the long protrusion 8 b of the insulating film 7 on the upper surface is formed is disposed on the upper surface, and the lead frame main body 2 and the lower surface side are disposed thereon. The insulating film 7 and the reinforcing plate 9 may be laminated in this order, and may be laminated by using the above-mentioned adhesive and the like.

In the lead frame 31 of the present embodiment, the same operation and effect as those of the lead frame 1 of the first embodiment can be obtained.

(Fourth Embodiment) FIG. 10 is a perspective view showing a main part of a fourth embodiment of the lead frame of the present invention.
The lead frame 41 of the fourth embodiment is different from the lead frame 1 shown in FIGS. 1 to 3 in that a plurality of leads 5 are covered on both sides with an insulating material 47 and the insulating materials 47 are adjacent to each other. The point is that the lead is interposed between the leads 5 and 5 to serve as a lead separating means. The ends of the plurality of leads 5 on the upper surface side of the inner lead portions 5a, that is, the portions connected to the electrode pads of the semiconductor chip are not covered with the insulating material 47. Also, each outer lead portion 5a of the lead 5.
Are not covered with the insulating material 47. The material of the insulating material 47 is
Heat-resistant polyimide or the like is used.

As a method of manufacturing such a lead frame 41, a resin of the insulating material 47 is applied to the position of the lead frame main body 2 where the insulating material 47 is to be formed, cured, and then the reinforcing material 9 is coated on the lower surface thereof. A method of bonding with an adhesive and the like can be given. When the resin of the insulating material 47 is applied to the lead frame main body 2, the ends of the plurality of leads 5... On the upper surface side of each inner lead portion 5a and each outer lead portion 5a are masked. In addition, it is possible to prevent the insulating material 47 from adhering to an extra portion. In the lead frame 41 of the present embodiment, the same operation and effect as those of the lead frame 1 of the first embodiment can be obtained. In the above embodiment, the case where the reinforcing plate 9 is provided on the lower surface of the insulating film 7 or the insulating material 47 has been described.
When the thickness of the insulating film 7 or the insulating material 47 is large and has a strength capable of preventing the displacement of the lead at the time of bump connection, the reinforcing plate 9 may not be provided.

(Embodiment of Electronic Apparatus) FIG. 11 is a view showing an embodiment of a semiconductor device (electronic apparatus) having a lead frame according to the present invention. FIG. 11 (A) is a sectional view and FIG. 11 (B). FIG. 3 is a cross-sectional view of the semiconductor chip and the lead frame taken along line DD. The semiconductor device 90 includes a semiconductor chip 95, a lead frame 1 on which the semiconductor chip 95 is mounted, and an inner lead 5 a of the lead frame 1.
And an IC package 98 that covers the semiconductor chip 95. The lead frame 1 is the lead frame according to the first embodiment shown in FIGS.

As shown in FIG. 12, the semiconductor chip 95 has electrode pads (ball grid array type terminals) on its back surface.
96 (16 in the drawing) are provided. These electrode pads 96 ... of the pitch (tip electrode pad pitch) P ₂ is, 200 [mu] m or less, preferably 60μm~1
It is about 10 μm. Each electrode pad 96 of the semiconductor chip 95 is connected to an end of the upper surface of the inner lead portion 5a of the corresponding lead 5 via a solder ball (bump) 97. The semiconductor chip 95 and the inner lead portion 5a of the lead frame 1 in which the lead 5 is connected to the electrode pad 96 are connected to the IC package 9 as described above.
8 covered.

The method for manufacturing the semiconductor device 90 is as follows.
For example, when the semiconductor chip 95 is mounted on the semiconductor chip mounting surface 1a of the lead frame 1 shown in FIG. 1 with its electrode pad formation surface facing downward (lead frame 1 side),
After a solder ball (bump) 97 is interposed between the electrode pad 96 and the corresponding lead 5 for bump connection, the outer lead portion 5b of each lead 5 shown in FIG.
It can be manufactured by cutting along. Here, when bump connection is made, when each electrode pad 96 is connected to the corresponding lead 5, a long convex portion 8 is provided between adjacent leads 5 and 5 as a lead separating means. Leads 5 and 5 do not come into contact with each other.

In the semiconductor device 90 of this embodiment,
Since the lead frame 1 shown in FIGS. 1 and 2 is provided, the chip electrode pad pitch P ₂ is 200 μm or less, preferably about 100 to 110 μm. When bumps are connected between the electrode pads 96 and the corresponding leads 5, the adjacent leads 5, 5 do not come into contact with each other, and can be easily bump-connected. A semiconductor device having excellent characteristics can be obtained.

In the semiconductor device 90 of the above embodiment, the case where the lead frame 1 shown in FIGS. 1 and 2 is used as the lead frame on which the semiconductor chip 95 is mounted has been described. When bump connection is performed using any of the lead frames according to the embodiments of the present invention shown in FIGS.
The semiconductor device 5 can be easily bump-connected without contact with the semiconductor device 5, and can be reduced in size and thickness, and also excellent in high-frequency characteristics. In the semiconductor device 90, the case where the outer lead portions 5b led out of the IC package 98 are flat has been described. However, as shown in FIG. The gull wing type may be bent twice every time, or each lead 5 may be bent as shown in FIG.
May be of a straight type (butt lead type) in which the outer lead portion 5 is bent by about 90 degrees.

(Other Embodiments of Electronic Parts) FIG.
FIG. 9 is a perspective view showing another embodiment of the electronic component of the present invention. The electronic component 80 is an electronic component in which a plurality of leads 85... For external connection are led out of the package 88, and the lower surface of the leads 85. An insulating film 87 is attached to the adjacent lead 8.
A long convex portion 88 is provided as a lead separating means for preventing the contact between 5, 85. A reinforcing plate 89 made of a metal plate or the like for reinforcing the leads 85... Is provided on the outer surface (the surface opposite to the leads 85) of the insulating film 87. When the reinforcing plate 89 is provided, when the leads 85 are connected to the connection terminals of other components by bumps, the effect of preventing the leads from being blurred can be enhanced, and the leads can be stabilized. This is preferable in that bump connection can be easily performed.

According to the electronic component 80 of this embodiment, the bumps are connected to the connection terminals of other components such as a substrate in which the pitch of the connection terminals such as electrode pads is smaller than 200 μm. Set the interval between the leads 85, 85 to 50
Even if it is narrower than μm, since the long convex portion 88 as the lead separating means is provided between the leads 85, 85, the connection terminal portion and the lead 85 corresponding thereto are provided.
When bumps are bonded, the bumps can be easily connected without the adjacent leads 85 contacting each other. Further, in the electronic component 80 of the present embodiment, the interval between the leads 85 and 85 is narrower than 50 μm in order to perform bump connection with the connection terminal portion of another component such as a substrate having a connection terminal pitch of about 100 μm to 110 μm. However, since the long convex portion 88 as the lead separating means is provided between the leads 85, 85, when the connection terminal portion and the lead 85 are bump-bonded, the adjacent lead 8
Bump connection can be easily performed without contact between the bumps 5 and 85. In the electronic component 80 shown in FIG. 15, the case where the lead separating means is a long convex portion has been described, but it is not limited to the shape shown in FIG.
Other shapes may be used as long as they can separate 5, 85.

In the electronic component of the above-described embodiment, the case where the insulating film (insulating material) 87 is added except that the lower surfaces of the leads 85... Are connected to the outside has been described. The insulating film 87 has leads 85 ...
May be provided on the lower surface side and the upper surface side, respectively, and the insulating film 87 on the upper surface side may be provided with a convex portion as a lead separating means, or both surfaces of the leads 85. And the insulating material may be interposed between the leads 85 and 85 as a lead separating means.

Further, a plurality of leads 85... For external connection as shown in FIG.
Electronic component 80 provided with lead separation means 88 between
In an electronic device provided with
A lead 85 corresponding to a connection terminal of another component such as a substrate having a thickness of 0 μm or less, preferably about 100 to 110 μm.
.. Are connected by bumps.
Can be easily bump connected without contact.
The electronic device can be reduced in size and thickness.

[0046]

As described above, according to the lead frame of the present invention, an insulating material is provided on both surfaces or one surface of the lead except for at least a portion connected to the electrode pad. Is provided with a lead separating means for preventing contact between the adjacent leads, so that the bump electrode is connected to an electrode pad of an electronic component such as a semiconductor chip having a chip electrode pad pitch smaller than 200 μm. Even if the lead interval is narrower than 50 μm,
Since the lead separating means is provided between the leads, when the electrode pads and the leads are bump-bonded, the bumps can be easily connected without the adjacent leads coming into contact. The lead frame of the present invention has a chip electrode pad pitch of 100 μm to 110 μm.
Even if the lead spacing is narrower than 50 μm for bump connection to an electrode pad of an electronic component such as a semiconductor chip having a length of about m, the lead pad is provided between the leads. When bumps are connected to the above-mentioned leads, bumps can be easily connected without contact between adjacent leads.

[Brief description of the drawings]

FIG. 1 is a view showing a first embodiment of a lead frame of the present invention, FIG. 1 (A) is a plan view of the lead frame, and FIG. 1 (B) is a line BB in FIG. 1 (A). FIG.

FIG. 2 is a perspective view showing an example of a method for manufacturing the lead frame shown in FIG.

FIG. 3 is a perspective view of a main part for describing another example of the lead separating means provided in the lead frame of the first embodiment.

FIG. 4 is a perspective view of a main part for describing another example of the lead separating means provided in the lead frame of the first embodiment.

FIG. 5 is a perspective view of a main part for explaining another example of the lead separating means provided in the lead frame of the first embodiment.

FIG. 6 is a perspective view of a main part for explaining an example of a method of manufacturing a lead separating means provided in the lead frame of FIG. 5;

FIG. 7 is a perspective view of a main part for explaining another example of the lead separating means provided in the lead frame of the first embodiment.

FIG. 8 is a perspective view of a main part of a lead frame according to a second embodiment of the present invention.

FIG. 9 is a perspective view of a main part of a lead frame according to a third embodiment of the present invention.

FIG. 10 is a perspective view of a main part of a lead frame according to a fourth embodiment of the present invention.

FIG. 11 is a view showing an embodiment of a semiconductor device having a lead frame according to the present invention, wherein FIG.
1B is a cross-sectional view along the line DD.

FIG. 12 is a plan view of a semiconductor chip provided in the semiconductor device of FIG. 11 as viewed from the back surface side.

FIG. 13 is a view showing another embodiment of a semiconductor device in which an outer lead portion includes a gull-wing type lead frame.

FIG. 14 is a diagram showing another embodiment of a semiconductor device including a lead frame having a straight outer lead portion.

FIG. 15 is a perspective view showing another embodiment of the electronic component of the present invention.

FIG. 16 is an explanatory diagram of a method of connecting an electrode pad of a semiconductor chip and a lead of a conventional lead frame by a wire bonding method.

FIG. 17 is an explanatory view of a method of connecting electrode pads of a semiconductor chip and leads of a conventional lead frame by bump connection.

18 is a view of the semiconductor chip and the lead frame of FIG. 17 as viewed from the lower surface side.

[Explanation of symbols]

1, 21, 31, 41: Lead frame, 2: Lead frame body, 5, 85: Lead, 5a: Inner lead part, 5b: Outer lead part, 7, 87 ... -Insulating film (insulating material), 8, 8b, 8c, 8d, 28, 88
... Long convex portion (lead separating means), 8a ... projection (lead separating means), 9, 89 ... Reinforcement plate, 47 ... Insulating material, 80
... Electronic components, 81 ... Packages, 90 ... Semiconductor devices (electronic devices), 95 ... Semiconductor chips (electronic components), 9
6 ... electrode pad (ball grid array type terminal), 9
7 ... solder ball (bump), 98 ··· IC package, W ··· width, P ··· lead pitch, L ··· interval, P ₂ ···
Chip electrode pad pitch.

Claims (12)

[Claims] 1. A lead frame for mounting an electronic component provided with a plurality of electrode pads, wherein a plurality of leads each having one end connected to the electrode pad are formed, and both or one of the leads is provided. Surface, an insulating material is added except for at least a portion connected to the electrode pad, and the insulating material is provided with a lead separating means for preventing contact of the adjacent lead. Lead frame. 2. The lead frame according to claim 1, wherein both surfaces of said lead are covered with said insulating material, and said insulating material is interposed between said leads to serve as said lead separating means. 3. The lead frame according to claim 1, wherein said insulating material is provided on a lower surface side of said lead, and said insulating material is provided with a convex portion as said lead separating means. 4. The lead according to claim 1, wherein the insulating material is provided on the lower surface side and the upper surface side of the lead, respectively, and the insulating material on the upper surface side is provided with a convex portion as the lead separating means. Lead frame. 5. The lead frame according to claim 1, wherein the electronic component is a semiconductor chip. 6. An electronic device comprising the lead frame according to claim 1. Description: 7. A semiconductor device comprising the lead frame according to claim 5. 8. An electronic component from which a plurality of leads for external connection are led out, wherein:
An electronic component, wherein an insulating material is provided except for at least a portion connected to the outside, and the insulating material is provided with a lead separating means for preventing contact between the adjacent leads. 9. The electronic component according to claim 8, wherein both sides of said lead are covered with said insulating material, and said insulating material is interposed between said leads to serve as said lead separating means. 10. The electronic component according to claim 8, wherein said insulating material is provided on a lower surface side of said lead, and said insulating material is provided with a projection as said lead separating means. 11. The lead according to claim 8, wherein the insulating material is provided on the lower surface side and the upper surface side of the lead, respectively, and the insulating material on the upper surface side is provided with a convex portion as the lead separating means. Electronic components. 12. An electronic device comprising the electronic component according to claim 8. Description: