JP2002305269A - Multilayer interconnection board and its manufacturing method - Google Patents

Multilayer interconnection board and its manufacturing method

Info

Publication number
JP2002305269A
JP2002305269A JP2001109500A JP2001109500A JP2002305269A JP 2002305269 A JP2002305269 A JP 2002305269A JP 2001109500 A JP2001109500 A JP 2001109500A JP 2001109500 A JP2001109500 A JP 2001109500A JP 2002305269 A JP2002305269 A JP 2002305269A
Authority
JP
Japan
Prior art keywords
insulating layer
wiring board
multilayer wiring
lower pad
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001109500A
Other languages
Japanese (ja)
Other versions
JP4715014B2 (en
Inventor
Taketo Tsukamoto
健人 塚本
Takamasa Okuma
隆正 大熊
Naoto Ono
直人 大野
Atsushi Sasaki
淳 佐々木
Masataka Maehara
正孝 前原
Koji Ichikawa
浩二 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP2001109500A priority Critical patent/JP4715014B2/en
Publication of JP2002305269A publication Critical patent/JP2002305269A/en
Application granted granted Critical
Publication of JP4715014B2 publication Critical patent/JP4715014B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • H01L2924/15172Fan-out arrangement of the internal vias
    • H01L2924/15174Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer interconnection board, having connection reliability and a minute-diameter via hole, and to provide a method for manufacturing the multilayer interconnection board. SOLUTION: In the multilayer interconnection board where insulating and conductor wiring layers are laminated mutually, projections 2a and 2b are formed. At the projections 2a and 2b, a periphery section of a lower pad 1 in the via hole 6 for connecting the upper and lower conductor wiring layers is higher than a pad surface.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、絶縁層と導体配線
層が交互に積層してなる多層構造を有する多層配線基板
およびその製造方法に関し、特に、半導体素子搭載用イ
ンターポーザに用いられ、微小径ビアホールをめっきに
て形成する多層配線基板およびその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board having a multilayer structure in which insulating layers and conductor wiring layers are alternately stacked, and a method of manufacturing the same. The present invention relates to a multilayer wiring board in which a via hole is formed by plating and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、半導体大規模集積回路(LSI)
等の半導体素子ではトランジスターの集積度が高まり、
その動作速度はクロック周波数で1GHzに達するもの
が、また、入出力端子数では1000を越えるものが出
現するに至っている。
2. Description of the Related Art Recently, semiconductor large-scale integrated circuits (LSIs)
In semiconductor devices such as, the degree of integration of transistors increases,
The operation speed reaches 1 GHz in clock frequency, and the number of input / output terminals exceeds 1000.

【0003】半導体素子をプリント配線基板に実装する
ために、BGA(Ball Grid Array)や
CSP(Chip Size Package)等のイ
ンターポーザが開発され、現在では広く実用化されてい
る。図8はBGA構造のインターポーザに半導体素子を
搭載し、プリント配線基板へ実装した一例を示したもの
である。
In order to mount a semiconductor element on a printed wiring board, an interposer such as a BGA (Ball Grid Array) or a CSP (Chip Size Package) has been developed and is now widely used. FIG. 8 shows an example in which a semiconductor element is mounted on an interposer having a BGA structure and mounted on a printed wiring board.

【0004】ガラス布にエポキシ樹脂等を含浸した銅貼
基板やセラミック基板67aをベースに、絶縁層、導体
配線層を交互に積層した多層配線基板67の片側表面に
金等でバンプ63が形成され、半導体素子61の電極と
電気接続が取られている。また、反対表面には金等で表
面処理されたパッド64が形成され、半田ボール66を
介してプリント配線基板71の導体配線層65と接続さ
れている。
A bump 63 is formed of gold or the like on one surface of a multilayer wiring board 67 in which insulating layers and conductor wiring layers are alternately laminated based on a copper-clad board or a ceramic board 67a in which glass cloth is impregnated with an epoxy resin or the like. And the electrodes of the semiconductor element 61 are electrically connected. A pad 64 surface-treated with gold or the like is formed on the opposite surface, and is connected to a conductor wiring layer 65 of a printed wiring board 71 via a solder ball 66.

【0005】このような多層配線基板は銅貼り基板やセ
ラミック基板上に絶縁樹脂層と導体配線層を逐次積み上
げて形成される。この工法にて作製された多層配線基板
の絶縁層は、ポリイミド等の樹脂を塗布することにより
形成し、薄膜化することができる。また、導体配線層は
めっきで形成でき、微細配線が可能となる。一方、上下
の導体配線層を接続するビアホールはレーザ加工等にて
孔を形成し、内部をめっきで埋めることにより形成でき
る。このため、従来の銅貼り基板を一括積層する多層プ
リント配線基板、あるいは、グリーンシートを積層して
一括焼成するセラミック多層配線基板に比べ、高配線密
度化、薄膜化、小型化を図ることができる。
[0005] Such a multilayer wiring board is formed by sequentially stacking an insulating resin layer and a conductive wiring layer on a copper-clad board or a ceramic substrate. The insulating layer of the multilayer wiring board manufactured by this method can be formed by applying a resin such as polyimide so as to be thinned. Further, the conductor wiring layer can be formed by plating, and fine wiring can be performed. On the other hand, the via hole connecting the upper and lower conductor wiring layers can be formed by forming a hole by laser processing or the like and filling the inside with plating. For this reason, it is possible to achieve higher wiring density, thinner, and smaller in size as compared with a conventional multilayer printed wiring board in which copper-clad substrates are collectively laminated, or a ceramic multilayer wiring board in which green sheets are laminated and fired collectively. .

【0006】また、この多層化方法とは別に、従来の一
括積層する多層プリント配線基板に銅箔付ポリイミドフ
ィルムを接着剤で貼り合わせた構成のものも提案されて
いる。この構成においても、銅箔の薄さから微細配線を
形成することが可能となり、同様に、高配線密度化、薄
膜化、小型化を図ることができる。
In addition to this multi-layering method, there has been proposed a configuration in which a polyimide film with a copper foil is bonded to a conventional multilayer printed wiring board which is to be collectively laminated with an adhesive. Also in this configuration, fine wiring can be formed due to the thinness of the copper foil, and similarly, high wiring density, thinning, and miniaturization can be achieved.

【0007】半導体素子内の処理速度が高まるにつれ、
インターポーザ内を伝送する信号も高速化の要求が高ま
ってきている。これとともに、半導体素子の入出力端子
数も増加する傾向にあり、インターポーザとの接続方法
は、ワイヤーボンディングでは対応しきれくなり、格子
配列のフリップチップ接続が必要となる。この結果、イ
ンターポーザ内の接続端子からの配線の引き回しが単層
では困難になり、少なくとも2層に分けて配線を行う必
要が出てくる。また、信号の高速化に対応するため、配
線のマイクロストリップ構造やストリップ構造、あるい
は、コプレナー構造が必要になる場合があり、インター
ポーザの構造としてはますます多層化の方向にある。
As the processing speed in a semiconductor device increases,
There is an increasing demand for higher speed transmission of signals transmitted through the interposer. At the same time, the number of input / output terminals of the semiconductor element also tends to increase, and the connection method with the interposer becomes completely compatible with wire bonding, and flip-chip connection in a grid arrangement is required. As a result, it is difficult to route the wiring from the connection terminal in the interposer with a single layer, and it is necessary to divide the wiring into at least two layers. In addition, in order to cope with high-speed signals, a microstrip structure, a strip structure, or a coplanar structure of wiring may be required, and the structure of the interposer is becoming more and more multilayered.

【0008】しかしながら、インターポーザを製造する
側からみると、層数の増加は製造収率を著しく落とすこ
とになる。このため、いかにして配線を効率的に配置さ
せ、層数を減らす設計を行うかが重要になってくる。効
率的な配線を形成するための手段の一つとして、ビアホ
ールのランド径を小さくすることがあげられる。この結
果、製造精度を考慮すると、ビアホールの径自体を小さ
くする必要がある。
[0008] However, from the viewpoint of the manufacture of the interposer, an increase in the number of layers significantly reduces the manufacturing yield. For this reason, it is important how to design the wiring efficiently and reduce the number of layers. One of means for forming an efficient wiring is to reduce the land diameter of a via hole. As a result, in consideration of manufacturing accuracy, it is necessary to reduce the diameter of the via hole itself.

【0009】近年、エキシマーレーザやYAG第3高調
波、第4高調波を用いたレーザ加工機の導入が盛んにな
り、微小径の孔形成が容易になってきた。
In recent years, the introduction of laser processing machines using excimer lasers and YAG third and fourth harmonics has become popular, and it has become easy to form micro-diameter holes.

【0010】ビアホールを形成する方法として、レーザ
等で孔を形成して、下部パッド表面を露出させた後、無
電解銅めっき等で電気めっきのシード層を形成し、それ
を電極にして孔内部の側面や底部に一定厚のめっき形成
を行う。近年では、高速信号を通すため、あるいは、ビ
アホール直上へビアホールを形成して配線の自由度を上
げる目的で、孔内部をめっき金属で埋めてしまう、フィ
ルドビアめっきが注目されている。
As a method of forming a via hole, a hole is formed by a laser or the like, a lower pad surface is exposed, and a seed layer for electroplating is formed by electroless copper plating or the like, and the seed layer is used as an electrode to form a via hole. A constant thickness of plating is formed on the side and bottom of the substrate. In recent years, attention has been paid to filled via plating in which the inside of a hole is filled with a plating metal in order to pass a high-speed signal or to increase a degree of freedom of wiring by forming a via hole right above the via hole.

【0011】しかし、ビア径が小さいということは必然
的に下部パッドとの接触面積が小さくなるため、接続信
頼性を著しく低下させることになる。
However, a small via diameter inevitably reduces the contact area with the lower pad, thereby significantly lowering the connection reliability.

【0012】[0012]

【発明が解決しようとする課題】本発明は係る従来技術
の問題点に鑑みてなされたもので、接続信頼性のある微
小径ビアホールを有する多層配線基板およびその製造方
法を提供することを課題とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the problems of the prior art, and has as its object to provide a multilayer wiring board having a small diameter via hole with connection reliability and a method of manufacturing the same. I do.

【0013】[0013]

【課題を解決するための手段】本発明において上記の課
題を達成するために、請求項1の発明では絶縁層と導体
配線層が交互に積層してなる多層配線基板において、上
下の導体配線層を接続するビアホールの下部パッド周辺
部をパッド面より高くした突起部を形成することを特徴
とする多層配線基板としたものである。
According to the present invention, in order to achieve the above object, according to the first aspect of the present invention, there is provided a multilayer wiring board comprising an insulating layer and a conductive wiring layer which are alternately laminated. And forming a projection in which the periphery of the lower pad of the via hole connecting the via holes is higher than the pad surface.

【0014】また、請求項2の発明では該絶縁層が、下
部パッド上の第1の絶縁層、および、その上の第2の絶
縁層からなり、酸化剤に対する溶解速度が第2の絶縁層
より第1の絶縁層のほうが大きいことを特徴とする請求
項1に記載の多層配線基板としたものである。
According to a second aspect of the present invention, the insulating layer comprises a first insulating layer on the lower pad and a second insulating layer thereon, and the dissolving rate of the second insulating layer with respect to the oxidizing agent is high. 2. The multilayer wiring board according to claim 1, wherein the first insulating layer is larger than the first insulating layer.

【0015】また、請求項3の発明では該下部パッド突
起部の高さが第1の絶縁層厚程度であることを特徴とす
る請求項1および2に記載の多層配線基板としたもので
ある。
According to a third aspect of the present invention, there is provided the multilayer wiring board according to the first or second aspect, wherein the height of the lower pad projection is about the thickness of the first insulating layer. .

【0016】また、請求項4の発明では第1の絶縁層を
構成する材料が接着剤であることを特徴とする請求項1
から3に記載の多層配線基板としたものである。
According to a fourth aspect of the present invention, the material constituting the first insulating layer is an adhesive.
To the multilayer wiring board according to any one of the first to third aspects.

【0017】また、請求項5の発明では該突起部が金属
であることを特徴とする請求項1に記載の多層配線基板
としたものである。
According to a fifth aspect of the present invention, there is provided the multilayer wiring board according to the first aspect, wherein the protrusion is made of metal.

【0018】また、請求項6の発明では該突起部が、酸
化剤の溶解速度が第1の絶縁層より小さい樹脂材料から
なることを特徴とする請求項1に記載の多層配線基板と
したものである。
According to a sixth aspect of the present invention, in the multi-layer wiring board according to the first aspect, the protrusion is made of a resin material having a lower dissolution rate of the oxidizing agent than the first insulating layer. It is.

【0019】また、請求項7の発明では絶縁層上の下部
パッドに突起部を形成する工程と、その上に、第1の絶
縁層を介して第2の絶縁層を形成する工程と、表層から
レーザ光にて、ビアホール形成のための孔を形成する工
程と、酸化剤を用いて第1の絶縁層の孔径を広げる工程
と、孔内部および第2の絶縁層表面にめっき金属を形成
する工程と、第2の絶縁層上に導体配線層を形成するこ
とを特徴とする多層配線基板の製造方法としたものであ
る。
According to a seventh aspect of the present invention, a step of forming a projection on a lower pad on an insulating layer, a step of forming a second insulating layer on the first pad via a first insulating layer, Forming a hole for forming a via hole with a laser beam, expanding the hole diameter of the first insulating layer using an oxidizing agent, and forming a plating metal inside the hole and on the surface of the second insulating layer. Forming a conductor wiring layer on the second insulating layer.

【0020】また、請求項8の発明では該下部パッドの
周辺部を残し、それ以外の部分の導体層をハーフエッチ
ングすることを特徴とする請求項7記載の多層配線基板
の製造方法としたものである。
The invention according to claim 8 is the method of manufacturing a multilayer wiring board according to claim 7, wherein the peripheral portion of the lower pad is left, and the conductor layer in the other portion is half-etched. It is.

【0021】また、請求項9の発明では該下部パッドの
周辺部にめっきで突起部を形成することを特徴とする請
求項7記載の多層配線基板の製造方法としたものであ
る。
According to a ninth aspect of the present invention, there is provided the method for manufacturing a multilayer wiring board according to the seventh aspect, wherein the protrusion is formed by plating around the lower pad.

【0022】また、請求項10の発明では該下部パッド
上に、酸化剤に対する溶解速度が第1の絶縁材料より小
さい絶縁材料層を形成し、下部パッド周辺部以外の部分
をレーザ加工で除去して突起部を形成することを特徴と
する請求項7記載の多層配線基板の製造方法としたもの
である。
According to a tenth aspect of the present invention, an insulating material layer whose dissolution rate with respect to an oxidizing agent is smaller than that of the first insulating material is formed on the lower pad, and portions other than the peripheral portion of the lower pad are removed by laser processing. The method according to claim 7, wherein the protruding portion is formed.

【0023】[0023]

【発明の実施の形態】本発明の多層配線基板についてビ
アホール近傍の図を用いて説明する。図7は従来の多層
配線基板の断面図である。単層あるいは多層の絶縁基板
52上の下部パッド51と上部パッド56間をビアホー
ル55で電気的に接続されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A multilayer wiring board according to the present invention will be described with reference to a view near a via hole. FIG. 7 is a sectional view of a conventional multilayer wiring board. The lower pad 51 and the upper pad 56 on the single-layer or multi-layer insulating substrate 52 are electrically connected by a via hole 55.

【0024】ビアホール55の形成は、まず、下部パッ
ド上の絶縁層54表面からレーザにてビアホール形成の
ための孔をあける。レーザにおける樹脂と金属の加工速
度の差により、孔加工は下部パッド上で停止される。レ
ーザの種類としては、炭酸ガスレーザ、YAG(基本
波、第2高調波、第3高調波、第4高調波)レーザ、エ
キシマーレーザ等が上げられるが、微細孔を形成するに
は400nm以下の短波長レーザであるYAG第3高調
波、第4高調波ならびにエキシマーレーザが好ましい。
In forming the via hole 55, first, a hole for forming a via hole is formed by a laser from the surface of the insulating layer 54 on the lower pad. Hole processing is stopped on the lower pad due to the difference in processing speed between the resin and the metal in the laser. Examples of the type of laser include a carbon dioxide laser, a YAG (basic wave, a second harmonic, a third harmonic, and a fourth harmonic) laser, an excimer laser, and the like. YAG third harmonic, fourth harmonic, and excimer laser, which are wavelength lasers, are preferred.

【0025】レーザ加工により露出した銅などの下部パ
ッド表面を含め、孔内部および絶縁層54表面に電気銅
めっきのためのシード層を無電解めっきにて形成し、電
気銅めっきにて残りの孔内部をめっき金属で埋める。最
後に、表面の導体層をフォトエッチング法にて上部パッ
ド56、導体配線57を形成する・
A seed layer for copper electroplating is formed by electroless plating on the inside of the hole and on the surface of the insulating layer 54, including the surface of the lower pad made of copper or the like exposed by the laser processing. Fill the inside with plated metal. Finally, the upper conductive layer 57 and the upper pad 56 are formed by photo-etching the conductive layer on the surface.

【0026】ビアホールの径が小さくなると、下部パッ
ド51との接触面積は小さくなり、接続信頼性が低下す
る。
As the diameter of the via hole decreases, the contact area with the lower pad 51 decreases, and the connection reliability decreases.

【0027】このため、図1(a)および(b)に示す
ように、本発明では下部パッドとの接続部を広くとり、
接続信頼性を向上させたものである。
Therefore, as shown in FIGS. 1A and 1B, in the present invention, the connection portion with the lower pad is widened,
The connection reliability is improved.

【0028】下部パッドとの接続部を広くとるには、ま
ず、絶縁層の層構成として、酸化剤に対し溶解速度の高
い第1の絶縁層4を下部パッド1上に形成し、さらに、
その上に溶解速度の低い第2の絶縁層5を積層した構成
とする。
In order to widen the connection portion with the lower pad, first, a first insulating layer 4 having a high dissolution rate with respect to an oxidizing agent is formed on the lower pad 1 as a layer structure of the insulating layer.
A second insulating layer 5 having a low dissolution rate is laminated thereon.

【0029】また、下部パッド1の形状として、周辺部
に突起部2を形成する。図2は絶縁基板上に形成された
下部パッドの上面図を示す。突起部2は図1(a)に示
すように金属突起部2aでも、図1(b)に示すように
第2の絶縁層と同じ材料あるいは第2の絶縁層と同程度
の酸化剤に対する溶解速度を有する樹脂突起部2bでも
構わない。
Further, as the shape of the lower pad 1, a projection 2 is formed on the periphery. FIG. 2 shows a top view of the lower pad formed on the insulating substrate. As shown in FIG. 1A, the protruding portion 2 can be dissolved in the metal protruding portion 2a by the same material as the second insulating layer or by the same oxidizing agent as the second insulating layer, as shown in FIG. 1B. The resin protrusion 2b having a speed may be used.

【0030】図3(d)に示すように、レーザにてビア
ホール形成のための孔16を形成したのち、酸化剤にて
第1の絶縁層14を溶解させる。このとき、突起部12
により第1の絶縁層14の溶解は下部パッド11上のみ
に抑えることができる。突起部12が存在しない場合、
溶解量の制御が非常に困難なため、溶解部が下部パッド
の面積以上に広がり、めっき接続がとれなくなる。この
ため、突起部12の高さは第1の絶縁層14の厚さ程度
であることが必要である。
As shown in FIG. 3D, after a hole 16 for forming a via hole is formed by a laser, the first insulating layer 14 is dissolved by an oxidizing agent. At this time, the protrusion 12
Thereby, the dissolution of the first insulating layer 14 can be suppressed only on the lower pad 11. When the protrusion 12 does not exist,
Since it is very difficult to control the amount of dissolution, the dissolution portion spreads over the area of the lower pad, and the plating connection cannot be established. For this reason, it is necessary that the height of the protrusion 12 is about the thickness of the first insulating layer 14.

【0031】酸化剤処理としては、無電解めっきの前処
理に使われる過マンガン酸塩処理が好ましい。その条件
としては30から80g/lの過マンガン酸カリウムと
20から60g/lの水酸化ナトリウム水溶液で温度は
常温から80℃の間で行うことが好ましい。
The oxidizing agent treatment is preferably a permanganate treatment used for pretreatment of electroless plating. As the conditions, it is preferable to carry out the reaction at a temperature of from room temperature to 80 ° C. with 30 to 80 g / l of potassium permanganate and a 20 to 60 g / l aqueous solution of sodium hydroxide.

【0032】また、第2の絶縁層としては、酸化剤に溶
解しにくく、一般的に絶縁層として用いられるものであ
れば良く、ポリイミド、ポリベンズイミダゾール、ポリ
エーテルイミド、ポリフェニレンエーテルなどがあげら
れる。これらの材料は過マンガン酸処理液ではほとんど
溶解しない。一方、第1の絶縁層としては、ある程度酸
化剤に溶解し、絶縁層として用いられるもであればよ
い。たとえば、エポキシ系樹脂、変性ポリイミド樹脂、
ナイロンエポキシ系樹脂などが上げられる。第1の絶縁
層は基板と第2の絶縁層を接着する接着剤であっても構
わない。
As the second insulating layer, any material which is hardly soluble in an oxidizing agent and which is generally used as an insulating layer may be used, and examples thereof include polyimide, polybenzimidazole, polyetherimide, and polyphenylene ether. . These materials hardly dissolve in the permanganate treatment solution. On the other hand, the first insulating layer only needs to be dissolved in an oxidizing agent to some extent and used as the insulating layer. For example, epoxy resin, modified polyimide resin,
Nylon epoxy resin and the like can be mentioned. The first insulating layer may be an adhesive for bonding the substrate and the second insulating layer.

【0033】以下に実施の形態を説明する。An embodiment will be described below.

【0034】<突起部の製造方法の第1の実施の形態>
突起部の製造方法の第1の実施の形態を、図4の(a)
〜(d)の流れに従って説明する。
<First Embodiment of Manufacturing Method of Protrusion>
FIG. 4A shows a first embodiment of a method of manufacturing a projection.
The description will be made according to the flow of (d).

【0035】図4(a)に示す絶縁基板31上に形成し
た銅層32(厚さ18μm)にフォトレジスト33とし
てPMER(東京応化工業製)をコーティングし、80
℃、30分乾燥させた(図4(b))。乾燥後の膜厚は
6μmであった。
A copper layer 32 (18 μm thick) formed on the insulating substrate 31 shown in FIG. 4A is coated with PMER (manufactured by Tokyo Ohka Kogyo Co., Ltd.)
It dried at 30 degreeC and 30 minutes (FIG.4 (b)). The film thickness after drying was 6 μm.

【0036】図4(c)に示すように、所定のパターン
を有するフォトマスクを介して露光、現像を行い、フォ
トレジストパターン34を形成する。このとき、18μ
m厚の銅層をエッチングする際に、下部パッド中央部、
ならびに、導体配線部にはハーフエッチングになるよう
な網点等のフォトレジストパターン34bを形成してお
く。
As shown in FIG. 4C, exposure and development are performed through a photomask having a predetermined pattern, and a photoresist pattern 34 is formed. At this time, 18μ
When etching a copper layer of m thickness, the center of the lower pad,
In addition, a photoresist pattern 34b such as a halftone dot is formed on the conductor wiring portion so as to be half-etched.

【0037】図4(d)に示すように、50℃、40°
Beの塩化第2鉄液で銅露出部を溶解除去して突起部3
7aを形成した。下部パッド36の中央部35、およ
び、導体配線38の厚さは、およそ、8μmであった。
As shown in FIG. 4D, at 50 ° C. and 40 °
The exposed portion of copper is dissolved and removed with a ferric chloride solution of Be to form a projection 3
7a was formed. The thickness of the central portion 35 of the lower pad 36 and the thickness of the conductor wiring 38 were approximately 8 μm.

【0038】<突起部の製造方法の第2の実施の形態>
突起部の製造方法の第2の実施の形態を、図5の(a)
〜(h)の流れに従って説明する。
<Second Embodiment of Manufacturing Method of Protrusion>
The second embodiment of the method of manufacturing the protrusion is shown in FIG.
The description will be made according to the flow of (h).

【0039】図5(a)に示す絶縁基板31上に形成し
た銅層32(厚さ9μm)にフォトレジスト33として
PMER(東京応化工業製)をコーティングし、80
℃、30分乾燥させた(図5(b))。乾燥後の膜厚は
6μmであった。
A copper layer 32 (9 μm thick) formed on the insulating substrate 31 shown in FIG. 5A is coated with PMER (manufactured by Tokyo Ohka Kogyo Co., Ltd.)
It dried at 30 degreeC and 30 minutes (FIG.5 (b)). The film thickness after drying was 6 μm.

【0040】図5(c)に示すように、所定のパターン
を有するフォトマスクを介して露光、現像を行い、フォ
トレジストパターン34を形成する。
As shown in FIG. 5C, exposure and development are performed through a photomask having a predetermined pattern to form a photoresist pattern 34.

【0041】図5(d)に示すように、50℃、40°
Beの塩化第2鉄液で銅露出部を溶解除去した。
As shown in FIG. 5D, at 50 ° C. and 40 °
The exposed copper portion was dissolved and removed with a ferric chloride solution of Be.

【0042】図5(e)に示すように、フォトレジスト
34を除去して下部パッド36、および、導体配線38
を形成した。
As shown in FIG. 5E, the photoresist 34 is removed and the lower pad 36 and the conductor wiring 38 are removed.
Was formed.

【0043】図5(f)に示すように、さらに、フォト
レジスト39として、EPPR(東京応化工業製)をコ
ーティングし、80℃、30分乾燥した。
As shown in FIG. 5F, EPPR (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was further coated as a photoresist 39 and dried at 80 ° C. for 30 minutes.

【0044】図5(g)に示すように、所定のパターン
を有するフォトマスクを介して露光、現像を行い、突起
部に相当する部分に開口部を設けた。さらに、パラジウ
ム処理を施し、無電解銅めっきを行い、突起部にあたる
金属部を5μm形成した。
As shown in FIG. 5G, exposure and development were performed through a photomask having a predetermined pattern, and an opening was provided in a portion corresponding to the projection. Further, a palladium treatment was performed, and electroless copper plating was performed to form a metal portion corresponding to the protrusion at 5 μm.

【0045】図5(h)に示すように、フォトレジスト
パターン40を除去し、突起部37aを形成した。
As shown in FIG. 5H, the photoresist pattern 40 was removed to form a projection 37a.

【0046】<突起部の製造方法の第3の実施の形態>
突起部の製造方法の第3の実施の形態を、図6の(a)
〜(g)の流れに従って説明する。
<Third Embodiment of Manufacturing Method of Protrusion>
The third embodiment of the method of manufacturing the protrusion is shown in FIG.
The description will be made according to the flow of (g).

【0047】図6(a)に示す絶縁基板31上に形成し
た銅層32(厚さ9μm)にフォトレジスト33として
PMER(東京応化工業製)をコーティングし、80
℃、30分で乾燥した(図6(b))。乾燥後の膜厚は
6μmであった。
A PMER (manufactured by Tokyo Ohka Kogyo) is coated as a photoresist 33 on a copper layer 32 (9 μm thick) formed on an insulating substrate 31 shown in FIG.
It dried at 30 degreeC and 30 minutes (FIG. 6 (b)). The film thickness after drying was 6 μm.

【0048】図6(c)に示すように、所定のパターン
を有するフォトマスクを介して露光、現像を行い、フォ
トレジストパターン34を形成する。
As shown in FIG. 6C, exposure and development are performed through a photomask having a predetermined pattern to form a photoresist pattern 34.

【0049】図6(d)に示すように、50℃、40°
Beの塩化第2鉄液で銅露出部を溶解除去した。
As shown in FIG. 6D, at 50 ° C. and 40 °
The exposed copper portion was dissolved and removed with a ferric chloride solution of Be.

【0050】図6(e)に示すように、フォトレジスト
34を除去して下部パッド36、および、導体配線38
を形成した。
As shown in FIG. 6E, the photoresist 34 is removed and the lower pad 36 and the conductor wiring 38 are removed.
Was formed.

【0051】図6(f)に示すように、ポリイミド樹脂
液(宇部興産(株)製ユピファイン)をスクリーン印刷
にて塗布し、100℃/30分、180℃/10分、3
50℃/30分でイミド化を行った。イミド化後の膜厚
は下部パッド上で8μmであった。
As shown in FIG. 6 (f), a polyimide resin solution (UPI-FINE manufactured by Ube Industries, Ltd.) was applied by screen printing, and 100 ° C./30 minutes, 180 ° C./10 minutes, and 3 ° C.
The imidation was performed at 50 ° C./30 minutes. The film thickness after imidization was 8 μm on the lower pad.

【0052】図6(g)に示すように、KrFエキシマ
ーレーザにて突起部37bのみポリイミド膜を残し、他
の部分を除去した。また、突起部のみポリイミド樹脂を
残すのではなく、ビアホールと接続する下部パッド中央
部のみKrFエキシマーレーザでポリイミド開口部を形
成する構造でも構わない。この場合、絶縁基板と第1の
絶縁層の間に形成されたポリイミド膜も絶縁層としての
役割を果たす。
As shown in FIG. 6 (g), only the protrusion 37b was left on the polyimide film by KrF excimer laser, and the other portions were removed. Also, the polyimide opening may be formed only by the KrF excimer laser in the center of the lower pad connected to the via hole, instead of leaving the polyimide resin only in the protrusion. In this case, the polyimide film formed between the insulating substrate and the first insulating layer also serves as an insulating layer.

【0053】<多層配線基板の製造方法の実施の形態>
多層配線基板の製造方法の実施の形態を、微小径ビアホ
ール周辺部に焦点を当てて、図3の(a)〜(i)の流
れに従って説明する。
<Embodiment of Method for Manufacturing Multilayer Wiring Board>
An embodiment of a method for manufacturing a multilayer wiring board will be described in accordance with the flow of FIGS. 3A to 3I, focusing on the periphery of a small-diameter via hole.

【0054】図3(a)に示す、突起部12(高さ約1
4μm)を形成した下部パッド11(厚さ9μm)を有す
る厚さ50μmのポリイミドテープ13(宇部興産
(株)製ユーピレックス)上に、エポキシ系接着剤をコ
ーティングした後、100℃、5分乾燥し第1の絶縁層
14を形成した。このときの厚さは、下地ポリイミド表
面から約15μmであった。さらに、第2の絶縁層15
として厚さ25μmのポリイミドテープ(宇部興産
(株)製ユーピレックス)を130℃でラミネートし、
その後、180℃/1時間で硬化させた(図2
(b))。硬化後の第1の絶縁層厚はほぼ突起部12の
高さと同程度であり、約14μmであった。
As shown in FIG. 3A, the protrusion 12 (having a height of about 1
An epoxy adhesive is coated on a 50 μm thick polyimide tape 13 (UPILEX manufactured by Ube Industries, Ltd.) having a lower pad 11 (9 μm thick) on which a 4 μm) is formed, and then dried at 100 ° C. for 5 minutes. The first insulating layer 14 was formed. At this time, the thickness was about 15 μm from the surface of the base polyimide. Further, the second insulating layer 15
Is laminated at 130 ° C. with a 25 μm thick polyimide tape (UPILEX manufactured by Ube Industries, Ltd.)
Then, it was cured at 180 ° C./1 hour (FIG. 2)
(B)). The thickness of the first insulating layer after curing was substantially the same as the height of the projection 12, and was about 14 μm.

【0055】図3(c)に示すように、YAGレーザの
第4高調波の光にて径20μmのビアホール形成のため
の孔16をあけた。このとき、下部パッド11の銅表面
には樹脂残さは見られなかった。
As shown in FIG. 3C, a hole 16 for forming a via hole having a diameter of 20 μm was formed by the fourth harmonic light of the YAG laser. At this time, no resin residue was observed on the copper surface of the lower pad 11.

【0056】図3(d)に示すように、酸化剤として、
50℃に加熱した過マンガン酸カリウム(50g/
l)、水酸化ナトリウム(20g/l)水溶液を用い、
下部パッド11の中央部上の第1の絶縁層を溶解し、空
隙部17を形成させた。
As shown in FIG. 3D, as the oxidizing agent,
Potassium permanganate heated to 50 ° C. (50 g /
l), using an aqueous solution of sodium hydroxide (20 g / l),
The first insulating layer on the central portion of the lower pad 11 was dissolved to form the void 17.

【0057】図3(e)に示すように、無電解銅めっき
にて孔16内部、空隙部17および第2の絶縁層表面に
薄膜導体層18を形成した。
As shown in FIG. 3E, a thin-film conductor layer 18 was formed inside the hole 16, the gap 17 and the surface of the second insulating layer by electroless copper plating.

【0058】図3(f)に示すように、電気銅めっきに
て孔内部19をめっき金属で埋めるとともに、基板表面
に銅めっき層を形成した。このときの基板表面の銅厚は
9μmであった。無電解銅めっき液や電気銅めっき液組
成は特に限定するものではなく、めっき金属特性や析出
速度に応じて適当なものを用いることができる。
As shown in FIG. 3 (f), the inside 19 of the hole was filled with a plating metal by electrolytic copper plating, and a copper plating layer was formed on the surface of the substrate. At this time, the copper thickness on the substrate surface was 9 μm. The composition of the electroless copper plating solution or the electrolytic copper plating solution is not particularly limited, and an appropriate composition can be used according to the plating metal characteristics and the deposition rate.

【0059】図3(g)に示すように、基板表面のめっ
き層を定法のフォトエッチング工程にて上部パッド21
および導体配線層20、22を形成した。
As shown in FIG. 3 (g), the plating layer on the substrate surface is exposed to the upper pad 21 by a standard photo etching process.
And the conductor wiring layers 20 and 22 were formed.

【0060】図3(h)に示すように、先に形成した導
体配線層20を次の層の下部パッドとし、同様にその周
辺部に突起部23を形成した。
As shown in FIG. 3 (h), the conductor wiring layer 20 formed earlier was used as a lower pad of the next layer, and a projection 23 was similarly formed on the periphery thereof.

【0061】図3(i)に示すように、図3(b)から
図3(g)の工程を再度繰り返すことにより、上層の第
1の絶縁層28、第2の絶縁層27、上部パッド24、
導体配線層25、ならびに、接続信頼性の高いビアホー
ル26を形成し、多層配線基板を形成した。さらに、同
様の工程を繰り返すことにより、より多層の多層配線基
板を製造することも可能である。
As shown in FIG. 3 (i), by repeating the steps of FIGS. 3 (b) to 3 (g) again, the upper first insulating layer 28, second insulating layer 27, upper pad 24,
The conductor wiring layer 25 and the via hole 26 with high connection reliability were formed, and a multilayer wiring board was formed. Further, by repeating the same steps, it is also possible to manufacture a multi-layered multilayer wiring board.

【0062】また、本実施の形態では、第2の絶縁層と
してポリイミド単体のフィルムを貼り合わせているが、
表層に銅箔の付いたポリイミドフィルムを貼り合わせて
も構わない。ハーフエッチングにて突起部を形成するに
は銅箔の厚い方が好ましく、全てめっきにて所定の厚さ
にするよりは、銅箔とめっきを組み合わせたほうが、有
効である。この場合、レーザによる穴加工は、加工周波
数を変えることにより、上部の銅箔と絶縁層の穴加工を
行い、下部パッドにて止めることが可能である。
In this embodiment, a polyimide film is bonded as the second insulating layer.
A polyimide film with a copper foil attached to the surface layer may be attached. In order to form a projection by half etching, it is preferable to use a thick copper foil, and it is more effective to combine the copper foil and the plating than to make a predetermined thickness by plating. In this case, the hole processing by the laser can be performed by changing the processing frequency, thereby performing the hole processing of the upper copper foil and the insulating layer, and stopping at the lower pad.

【0063】[0063]

【発明の効果】本発明は、微小径ビアホール底部の接触
面積を広くとり、微小径であっても接続信頼性が得られ
るという効果がある。また、第1の絶縁層と第2の絶縁
層の酸化剤に対する溶解速度の差を利用して、突起部を
形成することができる。
According to the present invention, there is an effect that a contact area at the bottom of a micro-diameter via hole is widened and connection reliability can be obtained even with a micro-diameter. In addition, a protrusion can be formed by utilizing a difference in dissolution rate of the first insulating layer and the second insulating layer with respect to an oxidizing agent.

【0064】[0064]

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の多層配線基板を示す断面図。FIG. 1 is a sectional view showing a multilayer wiring board of the present invention.

【図2】本発明の多層配線基板を示す上面図。FIG. 2 is a top view showing a multilayer wiring board of the present invention.

【図3】本発明の多層配線基板の製造方法を示す断面
図。
FIG. 3 is a cross-sectional view illustrating a method for manufacturing a multilayer wiring board according to the present invention.

【図4】本発明の多層配線基板に用いられる突起部の製
造方法を示す断面図。
FIG. 4 is a cross-sectional view illustrating a method of manufacturing a projection used in the multilayer wiring board of the present invention.

【図5】本発明の多層配線基板に用いられる突起部の製
造方法を示す断面図。
FIG. 5 is a cross-sectional view illustrating a method of manufacturing a projection used in the multilayer wiring board of the present invention.

【図6】本発明の多層配線基板に用いられる突起部の製
造方法を示す断面図。
FIG. 6 is a cross-sectional view illustrating a method of manufacturing a projection used in the multilayer wiring board of the present invention.

【図7】従来の多層配線基板を示す断面図。FIG. 7 is a sectional view showing a conventional multilayer wiring board.

【図8】従来の多層配線基板に半導体素子を搭載しプリ
ント配線基板へ実装した形態を示す断面図。
FIG. 8 is a cross-sectional view showing an embodiment in which a semiconductor element is mounted on a conventional multilayer wiring board and mounted on a printed wiring board.

【符号の説明】[Explanation of symbols]

1…下部パッド 2…突起部 2a…金属突起部 2b…樹脂突起部 3…絶縁基板 4…第1の絶縁層 5…第2の絶縁層 6…ビアホール 7…上部パッド 8…導体配線 11…下部パッド 12…突起部 13…絶縁基板 14…第1の絶縁層 15…第2の絶縁層 16…孔部 17…空隙 18…薄膜導体層 19…ビアホール 20…導体配線 21…上部パッド 22…導体配線 23…突起部 24…上部パッド 25…導体配線 26…ビアホール 27…第2の絶縁層 28…第1の絶縁層 31…絶縁基板 32…銅層 33…フォトレジスト 34…フォトレジストパターン 34a…フォトレジストパターン 34b…フォトレジスト網点パターン 35…ハーフエッチング部 36…下部パッド 37…突起部 37a…金属突起部 37b…樹脂突起部 38…導体配線 39…フォトレジスト 40…フォトレジストパターン 41…めっき金属 42…樹脂層 51…下部パッド 52…絶縁基板 53…第1の絶縁層 54…第2の絶縁層 55…ビアホール 56…上部パッド 57…導体配線 61…半導体素子 62…パッド 63…バンプ 64…パッド 65…導体配線層 66…半田ボール 67a…ベース基板 67b…多層配線層 68…ビアホール 69…下部導体配線層 70…スルーホール 71…プリント配線基板 DESCRIPTION OF SYMBOLS 1 ... Lower pad 2 ... Protrusion part 2a ... Metal protrusion part 2b ... Resin protrusion part 3 ... Insulating board 4 ... First insulating layer 5 ... Second insulating layer 6 ... Via hole 7 ... Upper pad 8 ... Conductor wiring 11 ... Lower part Pad 12 ... Protrusion 13 ... Insulating substrate 14 ... First insulating layer 15 ... Second insulating layer 16 ... Hole 17 ... Void 18 ... Thin film conductor layer 19 ... Via hole 20 ... Conductor wiring 21 ... Upper pad 22 ... Conductor wiring Reference Signs List 23 Projection portion 24 Upper pad 25 Conductor wiring 26 Via hole 27 Second insulating layer 28 First insulating layer 31 Insulating substrate 32 Copper layer 33 Photoresist 34 Photoresist pattern 34a Photoresist Pattern 34b photoresist halftone pattern 35 half-etched portion 36 lower pad 37 projecting portion 37a metal projecting portion 37b resin projecting portion 38 conductive Wiring 39 Photoresist 40 Photoresist pattern 41 Plating metal 42 Resin layer 51 Lower pad 52 Insulating substrate 53 First insulating layer 54 Second insulating layer 55 Via hole 56 Upper pad 57 Conductor Wiring 61 ... Semiconductor element 62 ... Pad 63 ... Bump 64 ... Pad 65 ... Conductor wiring layer 66 ... Solder ball 67a ... Base board 67b ... Multilayer wiring layer 68 ... Via hole 69 ... Lower conductor wiring layer 70 ... Through hole 71 ... Printed wiring board

───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐々木 淳 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 (72)発明者 前原 正孝 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 (72)発明者 市川 浩二 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Atsushi Sasaki, Inventor 1-5-1, Taito, Taito-ku, Tokyo Letterpress Printing Co., Ltd. (72) Inventor Masataka Maehara 1-1-1, Taito, Taito-ku, Tokyo Letterpress Inside Printing Co., Ltd. (72) Inventor Koji Ichikawa Inside 1-5-1, Taito, Taito-ku, Tokyo Toppan Printing Co., Ltd.

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】絶縁層と導体配線層が交互に積層してなる
多層配線基板において、 上下の導体配線層を接続するビアホールの下部パッド周
辺部をパッド面より高くした突起部を形成することを特
徴とする多層配線基板。
1. A multilayer wiring board comprising insulating layers and conductive wiring layers alternately laminated, wherein a projection is formed in which a peripheral portion of a lower pad of a via hole connecting upper and lower conductive wiring layers is higher than a pad surface. Characteristic multilayer wiring board.
【請求項2】該絶縁層が、下部パッド上の第1の絶縁
層、および、その上の第2の絶縁層からなり、酸化剤に
対する溶解速度が第2の絶縁層より第1の絶縁層のほう
が大きいことを特徴とする請求項1に記載の多層配線基
板。
2. The insulating layer according to claim 1, wherein said insulating layer comprises a first insulating layer on a lower pad and a second insulating layer thereon, wherein a dissolution rate with respect to an oxidant is higher than that of the second insulating layer. 2. The multilayer wiring board according to claim 1, wherein the width is larger.
【請求項3】該下部パッド突起部の高さが第1の絶縁層
厚程度であることを特徴とする請求項1および2に記載
の多層配線基板。
3. The multilayer wiring board according to claim 1, wherein the height of the lower pad projection is about the thickness of the first insulating layer.
【請求項4】第1の絶縁層を構成する材料が接着剤であ
ることを特徴とする請求項1から3に記載の多層配線基
板。
4. The multilayer wiring board according to claim 1, wherein a material forming the first insulating layer is an adhesive.
【請求項5】該突起部が金属であることを特徴とする請
求項1に記載の多層配線基板。
5. The multilayer wiring board according to claim 1, wherein said projection is made of metal.
【請求項6】該突起部が、酸化剤の溶解速度が第1の絶
縁層より小さい樹脂材料からなることを特徴とする請求
項1に記載の多層配線基板。
6. The multilayer wiring board according to claim 1, wherein said protrusions are made of a resin material having a lower dissolution rate of an oxidizing agent than the first insulating layer.
【請求項7】絶縁層上の下部パッドに突起部を形成する
工程と、その上に、第1の絶縁層を介して第2の絶縁層
を形成する工程と、表層からレーザ光にて、ビアホール
形成のための孔を形成する工程と、酸化剤を用いて第1
の絶縁層の孔径を広げる工程と、孔内部および第2の絶
縁層表面にめっき金属を形成する工程と、第2の絶縁層
上に導体配線層を形成することを特徴とする多層配線基
板の製造方法
7. A step of forming a projection on a lower pad on an insulating layer, a step of forming a second insulating layer on the lower pad via a first insulating layer, and Forming a hole for forming a via hole;
Increasing the diameter of the hole in the insulating layer, forming a plated metal inside the hole and on the surface of the second insulating layer, and forming a conductive wiring layer on the second insulating layer. Production method
【請求項8】該下部パッドの周辺部を残し、それ以外の
部分の導体層をハーフエッチングすることを特徴とする
請求項7記載の多層配線基板の製造方法。
8. The method for manufacturing a multilayer wiring board according to claim 7, wherein the peripheral portion of the lower pad is left, and the other portion of the conductor layer is half-etched.
【請求項9】該下部パッドの周辺部にめっきで突起部を
形成することを特徴とする請求項7記載の多層配線基板
の製造方法。
9. A method for manufacturing a multilayer wiring board according to claim 7, wherein a projection is formed by plating around the lower pad.
【請求項10】該下部パッド上に、酸化剤に対する溶解
速度が第1の絶縁材料より小さい絶縁材料層を形成し、
下部パッド周辺部以外の部分をレーザ加工で除去して突
起部を形成することを特徴とする請求項7記載の多層配
線基板の製造方法。
10. An insulating material layer having a lower dissolution rate with respect to an oxidizing agent than the first insulating material is formed on the lower pad,
8. The method for manufacturing a multilayer wiring board according to claim 7, wherein a portion other than a peripheral portion of the lower pad is removed by laser processing to form a projection.
JP2001109500A 2001-04-09 2001-04-09 Multilayer wiring board and manufacturing method thereof Expired - Fee Related JP4715014B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019036742A (en) * 2018-10-09 2019-03-07 ルネサスエレクトロニクス株式会社 Electronic apparatus
US10580763B2 (en) 2006-10-02 2020-03-03 Renesas Electronics Corporation Electronic device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555760A (en) * 1991-08-23 1993-03-05 Nippon Telegr & Teleph Corp <Ntt> Multilayer wiring structure formation method
JPH05226842A (en) * 1992-02-18 1993-09-03 Nec Toyama Ltd Manufacture of multilayered circuit board
JPH07202419A (en) * 1993-12-28 1995-08-04 Ibiden Co Ltd Production of printed wiring board
JPH118471A (en) * 1997-06-18 1999-01-12 Hitachi Ltd Manufacture of multilevel interconnection board and mounting method of electronic component by using the multilevel interconnection board
JPH11300487A (en) * 1998-04-20 1999-11-02 Sony Corp Drilling method and drilled body
JPH11330236A (en) * 1998-05-12 1999-11-30 Matsushita Electron Corp Electronic device having mulatilayered wiring and its manufacture
JP2000244127A (en) * 1998-12-24 2000-09-08 Ngk Spark Plug Co Ltd Wiring board and its manufacture
JP2001345557A (en) * 2000-05-31 2001-12-14 Kyocera Corp Wiring board and electronic component using the same
JP2002100869A (en) * 2000-09-22 2002-04-05 Meiko:Kk Circuit board, multilayer circuit board using it, and manufacturing method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555760A (en) * 1991-08-23 1993-03-05 Nippon Telegr & Teleph Corp <Ntt> Multilayer wiring structure formation method
JPH05226842A (en) * 1992-02-18 1993-09-03 Nec Toyama Ltd Manufacture of multilayered circuit board
JPH07202419A (en) * 1993-12-28 1995-08-04 Ibiden Co Ltd Production of printed wiring board
JPH118471A (en) * 1997-06-18 1999-01-12 Hitachi Ltd Manufacture of multilevel interconnection board and mounting method of electronic component by using the multilevel interconnection board
JPH11300487A (en) * 1998-04-20 1999-11-02 Sony Corp Drilling method and drilled body
JPH11330236A (en) * 1998-05-12 1999-11-30 Matsushita Electron Corp Electronic device having mulatilayered wiring and its manufacture
JP2000244127A (en) * 1998-12-24 2000-09-08 Ngk Spark Plug Co Ltd Wiring board and its manufacture
JP2001345557A (en) * 2000-05-31 2001-12-14 Kyocera Corp Wiring board and electronic component using the same
JP2002100869A (en) * 2000-09-22 2002-04-05 Meiko:Kk Circuit board, multilayer circuit board using it, and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10580763B2 (en) 2006-10-02 2020-03-03 Renesas Electronics Corporation Electronic device
US10879227B2 (en) 2006-10-02 2020-12-29 Renesas Electronics Corporation Electronic device
JP2019036742A (en) * 2018-10-09 2019-03-07 ルネサスエレクトロニクス株式会社 Electronic apparatus

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