JP2002299251A5 - - Google Patents
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- JP2002299251A5 JP2002299251A5 JP2001097228A JP2001097228A JP2002299251A5 JP 2002299251 A5 JP2002299251 A5 JP 2002299251A5 JP 2001097228 A JP2001097228 A JP 2001097228A JP 2001097228 A JP2001097228 A JP 2001097228A JP 2002299251 A5 JP2002299251 A5 JP 2002299251A5
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- JP
- Japan
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001097228A JP4698053B2 (ja) | 2001-03-29 | 2001-03-29 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| TW91102220A TW564484B (en) | 2001-03-29 | 2002-02-07 | Method for manufacturing group-III nitride compound semiconductor, group-III nitride compound semiconductor device, and group-III nitride compound semiconductor luminous device |
| EP02703977A EP1376664A4 (en) | 2001-03-29 | 2002-03-12 | PROCESS FOR PREPARING A SEMICONDUCTOR WITH GROUP III NITRIDE COMPOSITION AND SEMICONDUCTOR COMPONENT WITH GROUP III NITRIDE COMPOSITION |
| PCT/JP2002/002318 WO2002080242A1 (en) | 2001-03-29 | 2002-03-12 | Method for manufacturing group-iii nitride compound semiconductor, and group-iii nitride compound semiconductor device |
| US10/473,075 US7163876B2 (en) | 2001-03-29 | 2002-03-12 | Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001097228A JP4698053B2 (ja) | 2001-03-29 | 2001-03-29 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002299251A JP2002299251A (ja) | 2002-10-11 |
| JP2002299251A5 true JP2002299251A5 (ja) | 2008-03-27 |
| JP4698053B2 JP4698053B2 (ja) | 2011-06-08 |
Family
ID=18951035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001097228A Expired - Fee Related JP4698053B2 (ja) | 2001-03-29 | 2001-03-29 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4698053B2 (ja) |
| TW (1) | TW564484B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120027005A (ko) * | 2009-06-19 | 2012-03-20 | 스미또모 가가꾸 가부시키가이샤 | 발광 디바이스 및 발광 디바이스의 제조 방법 |
| JP2014078590A (ja) * | 2012-10-10 | 2014-05-01 | Tokyo Electron Ltd | 半導体素子の製造方法及び半導体素子 |
| JP5685617B2 (ja) * | 2013-03-29 | 2015-03-18 | ▲さん▼圓光電股▲ふん▼有限公司 | 発光ダイオード装置の製造方法 |
| JP7483269B2 (ja) * | 2019-03-01 | 2024-05-15 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | エピタキシャル側方成長層上の表面を平らにする方法 |
| US11944178B2 (en) | 2020-04-07 | 2024-04-02 | Kozhya LLC SP Z.O.O. | Dermal spray apparatus and method |
| US20230123741A1 (en) | 2021-10-14 | 2023-04-20 | Kozhya LLC Sp. z o.o. | Dermal spray apparatus with disposable cartrdige and method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251738A (ja) * | 1992-03-05 | 1993-09-28 | Fujitsu Ltd | 半導体光素子アレイの作製方法 |
| JPH05291156A (ja) * | 1992-04-10 | 1993-11-05 | Nec Corp | 元素半導体基板上の絶縁膜／化合物半導体積層構造 |
| JPH0851252A (ja) * | 1994-08-05 | 1996-02-20 | Fujitsu Ltd | 成膜方法及び半導体レーザの製造方法 |
| JP3876518B2 (ja) * | 1998-03-05 | 2007-01-31 | 日亜化学工業株式会社 | 窒化物半導体基板の製造方法および窒化物半導体基板 |
| JP3702700B2 (ja) * | 1999-03-31 | 2005-10-05 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法 |
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2001
- 2001-03-29 JP JP2001097228A patent/JP4698053B2/ja not_active Expired - Fee Related
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2002
- 2002-02-07 TW TW91102220A patent/TW564484B/zh not_active IP Right Cessation