JP2002294483A - シード層修復浴 - Google Patents

シード層修復浴

Info

Publication number
JP2002294483A
JP2002294483A JP2001322035A JP2001322035A JP2002294483A JP 2002294483 A JP2002294483 A JP 2002294483A JP 2001322035 A JP2001322035 A JP 2001322035A JP 2001322035 A JP2001322035 A JP 2001322035A JP 2002294483 A JP2002294483 A JP 2002294483A
Authority
JP
Japan
Prior art keywords
copper
present
amount
seed layer
copper ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001322035A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002294483A5 (https=
Inventor
David Merricks
デービッド・メリックス
Denis Morrissey
デニス・モリッセイ
Martin W Bayes
マーティン・ダブリュー・ベイズ
Mark Lefebvre
マーク・レフェブレ
James G Shelnut
ジェームズ・ジー・シェルナット
Donald E Storjohann
ドナルド・イー・ストルジョハン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of JP2002294483A publication Critical patent/JP2002294483A/ja
Publication of JP2002294483A5 publication Critical patent/JP2002294483A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/041—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being discontinuous
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001322035A 2000-10-20 2001-10-19 シード層修復浴 Withdrawn JP2002294483A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24223400P 2000-10-20 2000-10-20
US60/242234 2000-10-20

Publications (2)

Publication Number Publication Date
JP2002294483A true JP2002294483A (ja) 2002-10-09
JP2002294483A5 JP2002294483A5 (https=) 2005-09-15

Family

ID=22913979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001322035A Withdrawn JP2002294483A (ja) 2000-10-20 2001-10-19 シード層修復浴

Country Status (4)

Country Link
US (1) US6660153B2 (https=)
EP (1) EP1199383A3 (https=)
JP (1) JP2002294483A (https=)
KR (1) KR20020031075A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006510807A (ja) * 2002-12-16 2006-03-30 スリーエム イノベイティブ プロパティズ カンパニー 銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物
CN1326216C (zh) * 2003-12-30 2007-07-11 中芯国际集成电路制造(上海)有限公司 一种避免漩涡效应缺陷的方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660154B2 (en) 2000-10-25 2003-12-09 Shipley Company, L.L.C. Seed layer
US6797146B2 (en) * 2000-11-02 2004-09-28 Shipley Company, L.L.C. Seed layer repair
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US6676823B1 (en) * 2002-03-18 2004-01-13 Taskem, Inc. High speed acid copper plating
US7429401B2 (en) 2003-05-23 2008-09-30 The United States of America as represented by the Secretary of Commerce, the National Insitiute of Standards & Technology Superconformal metal deposition using derivatized substrates
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US9714474B2 (en) 2010-04-06 2017-07-25 Tel Nexx, Inc. Seed layer deposition in microscale features
US20140159285A1 (en) * 2011-05-03 2014-06-12 Digital Graphics Incorporation Composition for laser direct structuring and laser direct structuring method using same
KR102041646B1 (ko) * 2014-05-13 2019-11-07 삼성전기주식회사 전극 구조체

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841979A (en) * 1971-08-20 1974-10-15 M & T Chemicals Inc Method of preparing surfaces for electroplating
US5051154A (en) * 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
US5004525A (en) * 1988-08-23 1991-04-02 Shipley Company Inc. Copper electroplating composition
US4897165A (en) * 1988-08-23 1990-01-30 Shipley Company Inc. Electroplating composition and process for plating through holes in printed circuit boards
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
TWI223678B (en) * 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
WO2000014306A1 (fr) * 1998-09-03 2000-03-16 Ebara Corporation Procede et dispositif de revetement de substrat
EP1111096A3 (en) * 1999-12-15 2004-02-11 Shipley Company LLC Seed layer repair method
US6354916B1 (en) * 2000-02-11 2002-03-12 Nu Tool Inc. Modified plating solution for plating and planarization and process utilizing same
US6682642B2 (en) * 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006510807A (ja) * 2002-12-16 2006-03-30 スリーエム イノベイティブ プロパティズ カンパニー 銅配線および／またはフィルムを研磨および／または洗浄する方法およびそのための組成物
CN1326216C (zh) * 2003-12-30 2007-07-11 中芯国际集成电路制造(上海)有限公司 一种避免漩涡效应缺陷的方法

Also Published As

Publication number Publication date
KR20020031075A (ko) 2002-04-26
EP1199383A3 (en) 2004-02-11
US6660153B2 (en) 2003-12-09
EP1199383A2 (en) 2002-04-24
US20020088713A1 (en) 2002-07-11

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