KR20020031075A - 시드층 보완조 - Google Patents

시드층 보완조 Download PDF

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Publication number
KR20020031075A
KR20020031075A KR1020010064675A KR20010064675A KR20020031075A KR 20020031075 A KR20020031075 A KR 20020031075A KR 1020010064675 A KR1020010064675 A KR 1020010064675A KR 20010064675 A KR20010064675 A KR 20010064675A KR 20020031075 A KR20020031075 A KR 20020031075A
Authority
KR
South Korea
Prior art keywords
copper
present
amount
copper ions
seed layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020010064675A
Other languages
English (en)
Korean (ko)
Inventor
메릭스데이비드
모리세이데니스
베이에스마틴더블유.
리페브레마크
셸넛제임스지.
스토조한도널드이.
Original Assignee
마티네즈 길러모
쉬플리 캄파니, 엘.엘.씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마티네즈 길러모, 쉬플리 캄파니, 엘.엘.씨. filed Critical 마티네즈 길러모
Publication of KR20020031075A publication Critical patent/KR20020031075A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/041—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being discontinuous
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/044—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020010064675A 2000-10-20 2001-10-19 시드층 보완조 Withdrawn KR20020031075A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24223400P 2000-10-20 2000-10-20
US60/242,234 2000-10-20

Publications (1)

Publication Number Publication Date
KR20020031075A true KR20020031075A (ko) 2002-04-26

Family

ID=22913979

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010064675A Withdrawn KR20020031075A (ko) 2000-10-20 2001-10-19 시드층 보완조

Country Status (4)

Country Link
US (1) US6660153B2 (https=)
EP (1) EP1199383A3 (https=)
JP (1) JP2002294483A (https=)
KR (1) KR20020031075A (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660154B2 (en) 2000-10-25 2003-12-09 Shipley Company, L.L.C. Seed layer
US6797146B2 (en) * 2000-11-02 2004-09-28 Shipley Company, L.L.C. Seed layer repair
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US6676823B1 (en) * 2002-03-18 2004-01-13 Taskem, Inc. High speed acid copper plating
US6858124B2 (en) * 2002-12-16 2005-02-22 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
US7429401B2 (en) 2003-05-23 2008-09-30 The United States of America as represented by the Secretary of Commerce, the National Insitiute of Standards & Technology Superconformal metal deposition using derivatized substrates
CN1326216C (zh) * 2003-12-30 2007-07-11 中芯国际集成电路制造(上海)有限公司 一种避免漩涡效应缺陷的方法
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US9714474B2 (en) 2010-04-06 2017-07-25 Tel Nexx, Inc. Seed layer deposition in microscale features
US20140159285A1 (en) * 2011-05-03 2014-06-12 Digital Graphics Incorporation Composition for laser direct structuring and laser direct structuring method using same
KR102041646B1 (ko) * 2014-05-13 2019-11-07 삼성전기주식회사 전극 구조체

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841979A (en) * 1971-08-20 1974-10-15 M & T Chemicals Inc Method of preparing surfaces for electroplating
US5051154A (en) * 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
US5004525A (en) * 1988-08-23 1991-04-02 Shipley Company Inc. Copper electroplating composition
US4897165A (en) * 1988-08-23 1990-01-30 Shipley Company Inc. Electroplating composition and process for plating through holes in printed circuit boards
US5328589A (en) * 1992-12-23 1994-07-12 Enthone-Omi, Inc. Functional fluid additives for acid copper electroplating baths
TWI223678B (en) * 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
WO2000014306A1 (fr) * 1998-09-03 2000-03-16 Ebara Corporation Procede et dispositif de revetement de substrat
EP1111096A3 (en) * 1999-12-15 2004-02-11 Shipley Company LLC Seed layer repair method
US6354916B1 (en) * 2000-02-11 2002-03-12 Nu Tool Inc. Modified plating solution for plating and planarization and process utilizing same
US6682642B2 (en) * 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath

Also Published As

Publication number Publication date
EP1199383A3 (en) 2004-02-11
US6660153B2 (en) 2003-12-09
EP1199383A2 (en) 2002-04-24
JP2002294483A (ja) 2002-10-09
US20020088713A1 (en) 2002-07-11

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000