JP2002289791A5 - - Google Patents

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Publication number
JP2002289791A5
JP2002289791A5 JP2001093672A JP2001093672A JP2002289791A5 JP 2002289791 A5 JP2002289791 A5 JP 2002289791A5 JP 2001093672 A JP2001093672 A JP 2001093672A JP 2001093672 A JP2001093672 A JP 2001093672A JP 2002289791 A5 JP2002289791 A5 JP 2002289791A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2001093672A
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JP4602584B2 (ja
JP2002289791A (ja
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Priority to JP2001093672A priority Critical patent/JP4602584B2/ja
Priority claimed from JP2001093672A external-priority patent/JP4602584B2/ja
Priority to US09/899,269 priority patent/US6521934B2/en
Publication of JP2002289791A publication Critical patent/JP2002289791A/ja
Priority to US10/339,297 priority patent/US6780705B2/en
Publication of JP2002289791A5 publication Critical patent/JP2002289791A5/ja
Application granted granted Critical
Publication of JP4602584B2 publication Critical patent/JP4602584B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001093672A 2001-03-28 2001-03-28 半導体装置及びその製造方法 Expired - Fee Related JP4602584B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001093672A JP4602584B2 (ja) 2001-03-28 2001-03-28 半導体装置及びその製造方法
US09/899,269 US6521934B2 (en) 2001-03-28 2001-07-06 Semiconductor device with a plurality of elements having different heights
US10/339,297 US6780705B2 (en) 2001-03-28 2003-01-10 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001093672A JP4602584B2 (ja) 2001-03-28 2001-03-28 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2002289791A JP2002289791A (ja) 2002-10-04
JP2002289791A5 true JP2002289791A5 (ja) 2006-10-05
JP4602584B2 JP4602584B2 (ja) 2010-12-22

Family

ID=18947980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001093672A Expired - Fee Related JP4602584B2 (ja) 2001-03-28 2001-03-28 半導体装置及びその製造方法

Country Status (2)

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US (2) US6521934B2 (ja)
JP (1) JP4602584B2 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
KR100596845B1 (ko) * 2003-10-22 2006-07-04 주식회사 하이닉스반도체 반도체 소자의 콘택 형성 방법
US6884672B1 (en) * 2003-11-04 2005-04-26 International Business Machines Corporation Method for forming an electronic device
JP4291751B2 (ja) * 2004-07-23 2009-07-08 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
KR100629364B1 (ko) * 2004-12-28 2006-09-29 삼성전자주식회사 에스램 셀들 및 플래쉬 메모리 셀들을 구비하는 반도체직접회로 소자들 및 그 제조방법들
KR100693789B1 (ko) * 2005-10-18 2007-03-12 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100732272B1 (ko) * 2006-01-26 2007-06-25 주식회사 하이닉스반도체 반도체 소자의 제조 방법
TWI311351B (en) * 2006-08-21 2009-06-21 Powerchip Semiconductor Corp Method of manufacturing well pick-up structure of non-volatile memory
US20100247702A1 (en) * 2007-05-14 2010-09-30 Rompypaz Engineering Ltd. Systems and methods for a controlled process for producing mixtures of lightweight construction materials and systems for automatic production of lightweight bricks
KR100843715B1 (ko) * 2007-05-16 2008-07-04 삼성전자주식회사 반도체소자의 콘택 구조체 및 그 형성방법
JP5443676B2 (ja) * 2007-08-17 2014-03-19 スパンション エルエルシー 半導体装置及びその製造方法
JP5759091B2 (ja) * 2009-01-30 2015-08-05 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置及び半導体記憶装置の製造方法
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8125049B2 (en) * 2009-11-16 2012-02-28 International Business Machines Corporation MIM capacitor structure in FEOL and related method
US9209195B2 (en) * 2013-05-01 2015-12-08 Texas Instruments Incorporated SRAM well-tie with an uninterrupted grated first poly and first contact patterns in a bit cell array
US11011315B2 (en) * 2018-06-20 2021-05-18 Tdk Corporation Thin film capacitor, manufacturing method therefor, and multilayer circuit board embedded with thin film capacitor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3599466B2 (ja) * 1996-03-18 2004-12-08 株式会社日立製作所 半導体集積回路装置の製造方法
JP4086926B2 (ja) 1997-01-29 2008-05-14 富士通株式会社 半導体装置及びその製造方法
JP3641103B2 (ja) * 1997-06-27 2005-04-20 株式会社東芝 不揮発性半導体メモリ装置の製造方法
KR100258203B1 (ko) * 1997-12-29 2000-06-01 김영환 아날로그 반도체 소자의 제조방법
US5858831A (en) * 1998-02-27 1999-01-12 Vanguard International Semiconductor Corporation Process for fabricating a high performance logic and embedded dram devices on a single semiconductor chip
JP4262330B2 (ja) * 1998-08-05 2009-05-13 ローム株式会社 半導体装置の製造方法

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